EP1946386A2 - Revetement antireflet de cellules solaires et procede de fabrication - Google Patents

Revetement antireflet de cellules solaires et procede de fabrication

Info

Publication number
EP1946386A2
EP1946386A2 EP06828501A EP06828501A EP1946386A2 EP 1946386 A2 EP1946386 A2 EP 1946386A2 EP 06828501 A EP06828501 A EP 06828501A EP 06828501 A EP06828501 A EP 06828501A EP 1946386 A2 EP1946386 A2 EP 1946386A2
Authority
EP
European Patent Office
Prior art keywords
layer
solar cells
hydrogen
produced
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06828501A
Other languages
German (de)
English (en)
Inventor
Rainer Moeller
Robert Michael Hartung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Photovoltaics AG
Original Assignee
Centrotherm Photovoltaics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics AG filed Critical Centrotherm Photovoltaics AG
Publication of EP1946386A2 publication Critical patent/EP1946386A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • Antireflection coating on solar cells and method for producing such an antireflection coating
  • the invention relates to an antireflection coating on crystalline silicon solar cells and to a method for producing such an antireflection coating.
  • Antireflection layers on solar cells made of crystalline silicon have the task of providing an optimal anti-reflection of the solar cells in the later solar module and at the same time to create the conditions for a good electrical passivation of the silicon surface, as well as the grain boundaries and defects in silicon.
  • silicon nitride which is deposited by means of a plasma-chemical process on the front side of the solar cells. The process is carried out so that during the silicon nitride deposition at the same time a sufficient amount of hydrogen is incorporated into the SiN layer.
  • an antireflection film but without additional incorporation of hydrogen, it is apparent from DE 35 11 675 C2.
  • the antireflection film is applied to the silicon by reactive sputtering so as to be incident on the side of the interface between the antireflection film and the light Layer, the amount of nitrogen largest and the amount of oxygen is the lowest and that the amount of nitrogen decreases and the amount of oxygen increases with increasing distance from the interface. This results in an antireflection film with a continuously changing refractive index.
  • plasma-chemical processes plasma CVD, sputtering
  • plasma CVD plasma CVD, sputtering
  • sputtering plasma-chemical processes
  • the plasma-chemical processes represent very complicated vacuum process steps, which causes high costs.
  • simple and easy to handle continuous process are not without unreasonably high vacuum effort (locks) applicable.
  • throughput processes are becoming more and more important, in particular with regard to the increasingly thinner and thus more fragile solar cells.
  • the hydrogen content of the silicon nitride antireflection layers required for good passivation in the production process of the solar cells has the disadvantage that this causes "blisters", ie local, scallop-like bursts in the silicon layer, during subsequent high-temperature steps.
  • Titanium oxide offers no passivation effect.
  • the invention is based on the object of providing an antireflective coating on solar cells made of crystalline silicon, which enables optimum design of both their optical and their passivating properties and their production is simple and economical in the manufacturing process, especially of very thin crystalline silicon - Integrate solar cells.
  • the antireflection coating is composed of successive partial layers, of which a lower partial layer covering the crystalline silicon is designed as an antireflection coating with a particularly high hydrogen content and in that the lower partial layer is separated from an upper partial layer. layer is covered with increased barrier effect against the diffusion of hydrogen.
  • the lower sublayer is an amorphous or crystalline Si: H or Si x Ny: H layer, whereas the upper sublayer is TiO 2.
  • the lower sub-layer has a layer thickness of 1-10 nm in the case of a Si: H layer and 3-10 nm in the case of a Si x N y : H layer, wherein the layer thickness of both sub-layers together one quarter of the central wavelength the average value of the sunlight is.
  • the invention is further based on the object of specifying a method for producing such an antireflection coating.
  • the inventive method is characterized in that on the crystalline silicon, a lower, the crystalline silicon of the solar cell substantially over the entire surface covering the sub-layer is deposited in a plasmachemischen process at atmospheric pressure with high (maximum possible) hydrogen content as a passivation layer and that subsequently on the lower Partial layer, covering this essentially over the entire surface, an upper sublayer with increased barrier effect against the diffusion of hydrogen at atmospheric pressure is deposited.
  • the lower partial layer is produced in a first furnace part of a continuous furnace in which the solar cell is exposed to a remote plasma generated at normal pressure at a temperature up to about 500 0 C, which one or more process gases with the elements silicon and Containing hydrogen, so that a Si: H layer is generated and the solar cells are then transferred to a second furnace part, in which at a similar temperature by means of purely thermal
  • Normal pressure CVD deposition TiO 2 is deposited to form the upper part of the layer.
  • a remotely generated plasma is to be understood as meaning that the plasma is generated in a plasma chamber in which there are no substrates (solar cells to be coated), wherein the plasma-excited elements from the plasma chamber are driven by a slight gas flow onto the substrate to be coated become.
  • the lower partial layer is produced in a vacuum apparatus, is by exposed to a plasma of a plurality of process gases at a temperature up to 500 0 C, the solar cell, wherein the process gases include the elements silicon, nitrogen and hydrogen, so that a Si ⁇ N y : H layer is produced and the solar cells are then passed to a continuous furnace in which TiC> 2 is deposited at a similar temperature by means of purely thermal normal pressure CVD deposition to form the upper part-layer.
  • the lower sub-layer is produced in a vacuum apparatus by exposing the solar cell to a plasma of a plurality of process gases at a temperature of up to 500 ° C., the process gases containing the elements silicon, nitrogen and hydrogen, so that a Si x N y : H layer is produced and then by the solar cell is coated by a sputtering process with TiC> 2 to form the upper sub-layer in another part of the vacuum chamber.
  • the lower part of the layer is produced in a continuous furnace in which the solar cell is exposed to a remote plasma generated at atmospheric pressure at a temperature up to about 500 0 C, which contains one or more process gases with the elements silicon, nitrogen and hydrogen, so that a Si x Ny-H layer is produced and then by the solar cell to form the upper part-layer in a
  • Vacuum chamber by a sputtering with Ti ⁇ 2 coated becomes.
  • the lower sub-layer is up to a layer thickness of 1-10 nm in the case of a Si: H layer and 3-10 nm in the case of a Si x N y : H layer and then the upper sub-layer to deposited to a total layer thickness which corresponds to a quarter of the mean wavelength of the average value of sunlight.
  • the inventive solution results in the possibility of using different materials for the different sub-layers and layer preparation method 'to combine with each other so that the optical properties and the passivation properties of the resulting coating system can be optimally adjusted separately.
  • the result is a holistic layering system with a new optimal quality in terms of its properties and in terms of its manufacturing process.
  • the separation according to the invention of the electrical properties from the optical properties by a multilayer system for the passivation and antireflection coating of crystalline silicon solar cells offers a further potential.
  • the thin, adjacent to the silicon, passivation and anti-reflection coating (lower sub-layer) can be optimized with respect to the passivation effect.
  • the transparency of the layer which is described by the extinction coefficient kl, due to the small layer thickness of minor importance. This allows e.g. the use of silicon-rich nitride layers or even of amorphous silicon, whereby a further improved passivation effect can be achieved.
  • FIG. 1 shows a schematic representation of an inventive t layer structure on a substrate
  • FIG. 2 shows an arrangement for producing a layer structure according to FIG. 1 with a continuous furnace
  • FIG. 3 shows an arrangement for producing the SChicht inconveniences of FIG. 1 with a vacuum apparatus and downstream continuous furnace:
  • FIG. 4 shows an arrangement for producing a layer structure according to FIG. 1 with a multipart vacuum apparatus
  • FIG. 5 shows an arrangement for producing a layer structure according to FIG. 1 with a multipart evacuable continuous furnace.
  • FIG. 2 A first embodiment is shown in FIG. 2.
  • a first furnace part 1 of a continuous furnace 2 the substrates to be coated or wafer S (solar cells) at a temperature of up to 500 0 C by means of a transport device 3, a remote generated at normal pressure by a plasma source 4 plasma 5 is used to excite one or more process gases supplied by process gas feeds 6, which contain the elements silicon and hydrogen.
  • a lower partial layer S1 in the form of an amorphous or crystalline Si: H layer having a thickness di of about 1-10 nm is produced on the wafer S.
  • a lower sub-layer Sl covering upper sub-layer S2 is deposited with a thickness ä.2 of SiO 2 .
  • FIG. 8 A second embodiment is shown in FIG.
  • the wafers S to be coated are exposed at up to 500 ° C. to the plasma of one or more process gases which contain the elements silicon, nitrogen and hydrogen.
  • the process gases are introduced into the vacuum apparatus 8 by process gas feeds 9.
  • the coating process is carried out until a thin lower sub-layer Sl in the form of an amorphous or crystalline Si x Ny-: H layer having a thickness di of about 3 to 10 nm is produced.
  • the wafers S are conveyed via a transport device 10 in a continuous furnace 11, in which at a similar temperature a purely thermal normal pressure CVD deposition of TiC> 2 takes place, until an upper sub-layer 32 with a thickness d 2 to the desired overall Layer thickness d of one quarter of the mean wavelength of the average value of sunlight is reached.
  • the continuous furnace 11 is for this purpose provided with a heating device 12 and a process gas supply 13.
  • FIG. 4 A third embodiment is shown in FIG. 4.
  • a first part 14 of a vacuum apparatus 15 to be coated wafer S at up to 500 0 C the plasma 16 are suspended by one or more supplied through process gas inlets 18 process gases containing the elements silicon, nitrogen and hydrogen.
  • the plasma is generated by a plasma source 17.
  • the coating process is continued until a lower partial layer Sl of Si x Ny-.H with a
  • the wafers S are transferred to a second part 19 of the vacuum
  • the apparatus 15 is coated by a sputtering process, preferably with TiC> 2, forming the upper sub-layer S2 with a thickness d 2 , until the desired total layer thickness d of one quarter of the mean wavelength of the average of the sunlight is reached.
  • the second part 19 is equipped with a plasma source 20.
  • FIG. 1 A fourth embodiment is shown in FIG. 1
  • the wafers S to be coated are passed through an evacuable continuous furnace 21, in which a plasma 23 generated remotely at normal pressure by a plasma source 22 is used to process one or more process gases through process gas feeds 24 into one first part 25, which contain and excite the elements silicon, nitrogen and hydrogen, to produce a lower sub-layer Sl of Si x N y : H with a layer thickness di of 3 - 10 nm.
  • the upper sub-layer S2 is produced with a thickness d 2 .
  • the wafers S are brought into a second part 26 of the vacuum chamber and coated there by a sputtering process, preferably with TiC> 2, until the desired total layer thickness d of one fourth of the mean wavelength of the mean value of the sunlight is reached.
  • the process gases required for sputtering are supplied via a feed 27 into the second part 26, which is provided with a plasma source 28.
  • the transport of the wafer S through the continuous furnace 21 takes place with a suitable transport device 29, eg a belt or walking beam device.
  • a suitable transport device eg a belt or walking beam device.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un revêtement antireflet de cellules solaires en silicium cristallin, et un procédé de fabrication d'un tel revêtement. L'invention vise à mettre en oeuvre un tel revêtement antireflet présentant des propriétés optiques et de passivation optimales, dont le processus de fabrication peut être intégré de façon simple et économique au processus de fabrication de cellules solaires en silicium cristallin, notamment de cellule solaires très fines. A cet effet, le revêtement antireflet selon l'invention est composé de couches partielles consécutives dont une couche partielle inférieure (S1) recouvrant le silicium cristallin est conçue en tant que revêtement antireflet et de passivation présentant une forte teneur en hydrogène, cette couche étant recouverte par une couche partielle supérieure (S2) présentant un effet barrière plus important contre la diffusion d'hydrogène.
EP06828501A 2005-11-02 2006-11-02 Revetement antireflet de cellules solaires et procede de fabrication Withdrawn EP1946386A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005052556 2005-11-02
PCT/DE2006/001927 WO2007051457A2 (fr) 2005-11-02 2006-11-02 Revetement antireflet de cellules solaires et procede de fabrication

Publications (1)

Publication Number Publication Date
EP1946386A2 true EP1946386A2 (fr) 2008-07-23

Family

ID=37845100

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06828501A Withdrawn EP1946386A2 (fr) 2005-11-02 2006-11-02 Revetement antireflet de cellules solaires et procede de fabrication

Country Status (9)

Country Link
US (1) US20090071535A1 (fr)
EP (1) EP1946386A2 (fr)
KR (1) KR20080076913A (fr)
CN (1) CN101305471B (fr)
AU (1) AU2006310865B2 (fr)
DE (1) DE112006003617A5 (fr)
NO (1) NO20082555L (fr)
WO (1) WO2007051457A2 (fr)
ZA (1) ZA200804128B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8168462B2 (en) * 2009-06-05 2012-05-01 Applied Materials, Inc. Passivation process for solar cell fabrication
WO2011017659A1 (fr) * 2009-08-06 2011-02-10 Energy Focus, Inc. Procédé de passivation et de réduction de la réflectance d'une cellule photovoltaïque
US8772068B2 (en) * 2009-10-26 2014-07-08 Newsouth Innovations Pty Limited Metallization method for silicon solar cells
DE102010000001A1 (de) 2010-01-04 2011-07-07 Roth & Rau AG, 09337 Inline-Beschichtungsanlage
DE102010000002B4 (de) 2010-01-04 2013-02-21 Roth & Rau Ag Verfahren zur Abscheidung von Mehrlagenschichten und/oder Gradientenschichten
EP2613358A2 (fr) * 2012-01-04 2013-07-10 OC Oerlikon Balzers AG Revêtement antireflet à double couche pour modules de cellules solaires à base de silicium
CN104269446B (zh) * 2014-10-18 2016-08-31 中山市创科科研技术服务有限公司 一种太阳能电池用减反射镀层晶体硅片及制备方法
GB202216076D0 (en) * 2022-10-31 2022-12-14 Extraterrestrial Power Pty Ltd Solar cell

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
JPS58128775A (ja) * 1982-01-28 1983-08-01 Toshiba Corp 太陽電池の製造方法
US5418019A (en) * 1994-05-25 1995-05-23 Georgia Tech Research Corporation Method for low temperature plasma enhanced chemical vapor deposition (PECVD) of an oxide and nitride antireflection coating on silicon
WO1997013280A1 (fr) * 1995-10-05 1997-04-10 Ebara Solar, Inc. Pile solaire a emetteur localement profondement diffuse auto-aligne
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007051457A2 *

Also Published As

Publication number Publication date
AU2006310865A1 (en) 2007-05-10
NO20082555L (no) 2008-07-09
DE112006003617A5 (de) 2008-10-02
US20090071535A1 (en) 2009-03-19
WO2007051457A2 (fr) 2007-05-10
WO2007051457A3 (fr) 2007-07-05
CN101305471A (zh) 2008-11-12
CN101305471B (zh) 2010-09-08
KR20080076913A (ko) 2008-08-20
AU2006310865B2 (en) 2012-05-24
ZA200804128B (en) 2009-06-24

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