EP1900014A2 - Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche - Google Patents
Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle coucheInfo
- Publication number
- EP1900014A2 EP1900014A2 EP06792480A EP06792480A EP1900014A2 EP 1900014 A2 EP1900014 A2 EP 1900014A2 EP 06792480 A EP06792480 A EP 06792480A EP 06792480 A EP06792480 A EP 06792480A EP 1900014 A2 EP1900014 A2 EP 1900014A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- layer
- silicon
- sic
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 72
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 10
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 238000004611 spectroscopical analysis Methods 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 16
- 238000004377 microelectronic Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000005121 nitriding Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004838 photoelectron emission spectroscopy Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005469 synchrotron radiation Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000037213 diet Effects 0.000 description 2
- 235000005911 diet Nutrition 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- FKLJPTJMIBLJAV-UHFFFAOYSA-N Compound IV Chemical compound O1N=C(C)C=C1CCCCCCCOC1=CC=C(C=2OCCN=2)C=C1 FKLJPTJMIBLJAV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000004 low energy electron diffraction Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0552060A FR2888399B1 (fr) | 2005-07-05 | 2005-07-05 | Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche |
PCT/EP2006/063858 WO2007003639A2 (fr) | 2005-07-05 | 2006-07-04 | Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1900014A2 true EP1900014A2 (fr) | 2008-03-19 |
Family
ID=36146953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06792480A Withdrawn EP1900014A2 (fr) | 2005-07-05 | 2006-07-04 | Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100012949A1 (fr) |
EP (1) | EP1900014A2 (fr) |
JP (1) | JP2009500837A (fr) |
FR (1) | FR2888399B1 (fr) |
WO (1) | WO2007003639A2 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10446681B2 (en) * | 2017-07-10 | 2019-10-15 | Micron Technology, Inc. | NAND memory arrays, and devices comprising semiconductor channel material and nitrogen |
US10297611B1 (en) | 2017-12-27 | 2019-05-21 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
US10559466B2 (en) | 2017-12-27 | 2020-02-11 | Micron Technology, Inc. | Methods of forming a channel region of a transistor and methods used in forming a memory array |
JP7304577B2 (ja) * | 2019-11-27 | 2023-07-07 | 国立大学法人大阪大学 | 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法 |
EP3931862B1 (fr) * | 2020-03-17 | 2022-10-05 | Hitachi Energy Switzerland AG | Structure de grille isolée, dispositif de puissance utilisant un matériau à large bande interdite comprenant la structure et procédé de fabrication de la structure |
US11538919B2 (en) | 2021-02-23 | 2022-12-27 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3998662A (en) * | 1975-12-31 | 1976-12-21 | General Electric Company | Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface |
US4735921A (en) * | 1987-05-29 | 1988-04-05 | Patrick Soukiassian | Nitridation of silicon and other semiconductors using alkali metal catalysts |
US4900710A (en) * | 1988-11-03 | 1990-02-13 | E. I. Dupont De Nemours And Company | Process of depositing an alkali metal layer onto the surface of an oxide superconductor |
FR2757183B1 (fr) * | 1996-12-16 | 1999-02-05 | Commissariat Energie Atomique | Fils atomiques de grande longueur et de grande stabilite, procede de fabrication de ces fils, application en nano-electronique |
FR2801723B1 (fr) * | 1999-11-25 | 2003-09-05 | Commissariat Energie Atomique | Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche |
WO2002052652A1 (fr) * | 2000-12-26 | 2002-07-04 | Matsushita Electric Industrial Co., Ltd. | Composant a semi-conducteur et son procede de fabrication |
US20020088970A1 (en) * | 2001-01-05 | 2002-07-11 | Motorola, Inc. | Self-assembled quantum structures and method for fabricating same |
FR2823770B1 (fr) * | 2001-04-19 | 2004-05-21 | Commissariat Energie Atomique | Procede de traitement de la surface d'un materiau semiconducteur, utilisant notamment l'hydrogene, et surface obtenue par ce procede |
FR2823739B1 (fr) * | 2001-04-19 | 2003-05-16 | Commissariat Energie Atomique | Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede |
JP4029595B2 (ja) * | 2001-10-15 | 2008-01-09 | 株式会社デンソー | SiC半導体装置の製造方法 |
US7022378B2 (en) * | 2002-08-30 | 2006-04-04 | Cree, Inc. | Nitrogen passivation of interface states in SiO2/SiC structures |
-
2005
- 2005-07-05 FR FR0552060A patent/FR2888399B1/fr not_active Expired - Fee Related
-
2006
- 2006-07-04 JP JP2008519929A patent/JP2009500837A/ja active Pending
- 2006-07-04 US US11/988,284 patent/US20100012949A1/en not_active Abandoned
- 2006-07-04 EP EP06792480A patent/EP1900014A2/fr not_active Withdrawn
- 2006-07-04 WO PCT/EP2006/063858 patent/WO2007003639A2/fr active Application Filing
Non-Patent Citations (1)
Title |
---|
SOUKASSIAN ET AL: "Direct observation of a [beta]-SiC(100)-c(4*2) surface reconstruction", PHYSICAL REVIEW LETTERS, vol. 78, no. 5, 3 February 1997 (1997-02-03), APS (US), pages 907 - 910 * |
Also Published As
Publication number | Publication date |
---|---|
WO2007003639A2 (fr) | 2007-01-11 |
FR2888399A1 (fr) | 2007-01-12 |
US20100012949A1 (en) | 2010-01-21 |
FR2888399B1 (fr) | 2008-03-14 |
JP2009500837A (ja) | 2009-01-08 |
WO2007003639A3 (fr) | 2007-03-15 |
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Legal Events
Date | Code | Title | Description |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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Effective date: 20071206 |
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DAX | Request for extension of the european patent (deleted) | ||
17Q | First examination report despatched |
Effective date: 20080502 |
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RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: UNIVERSITE PARIS-SUD (PARIS XI) Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES |
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GRAP | Despatch of communication of intention to grant a patent |
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STAA | Information on the status of an ep patent application or granted ep patent |
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18D | Application deemed to be withdrawn |
Effective date: 20110218 |