EP1895567A3 - Verfahren, Werkzeug, und Vorrichtung zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren, Werkzeug, und Vorrichtung zur Herstellung einer Halbleitervorrichtung Download PDF

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Publication number
EP1895567A3
EP1895567A3 EP07015728A EP07015728A EP1895567A3 EP 1895567 A3 EP1895567 A3 EP 1895567A3 EP 07015728 A EP07015728 A EP 07015728A EP 07015728 A EP07015728 A EP 07015728A EP 1895567 A3 EP1895567 A3 EP 1895567A3
Authority
EP
European Patent Office
Prior art keywords
susceptor
semiconductor substrate
disposed
increasing mechanism
adherence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07015728A
Other languages
English (en)
French (fr)
Other versions
EP1895567A2 (de
Inventor
Koichi Nishikawa
Masaaki Shimizu
Kenichi Nonaka
Seiichi Yokoyama
Hideki Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Honda Motor Co Ltd
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Motor Co Ltd, Shindengen Electric Manufacturing Co Ltd filed Critical Honda Motor Co Ltd
Publication of EP1895567A2 publication Critical patent/EP1895567A2/de
Publication of EP1895567A3 publication Critical patent/EP1895567A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Wire Bonding (AREA)
EP07015728A 2006-08-31 2007-08-09 Verfahren, Werkzeug, und Vorrichtung zur Herstellung einer Halbleitervorrichtung Withdrawn EP1895567A3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006236606A JP5080043B2 (ja) 2006-08-31 2006-08-31 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置

Publications (2)

Publication Number Publication Date
EP1895567A2 EP1895567A2 (de) 2008-03-05
EP1895567A3 true EP1895567A3 (de) 2008-06-25

Family

ID=38462395

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07015728A Withdrawn EP1895567A3 (de) 2006-08-31 2007-08-09 Verfahren, Werkzeug, und Vorrichtung zur Herstellung einer Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US8703626B2 (de)
EP (1) EP1895567A3 (de)
JP (1) JP5080043B2 (de)
KR (1) KR101388204B1 (de)
CN (1) CN101136350A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2929959B1 (fr) * 2008-04-10 2010-08-27 Commissariat Energie Atomique Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature
CN102110489B (zh) * 2010-12-24 2012-08-08 中国科学院苏州纳米技术与纳米仿生研究所 高强度透明高导电性自支持碳纳米管超薄膜及其制备方法
JP6104823B2 (ja) * 2011-03-01 2017-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄型加熱基板支持体
US20140273533A1 (en) * 2013-03-15 2014-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Annealing Method Utilizing a Vacuum Environment
US10407769B2 (en) * 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02228035A (ja) * 1989-03-01 1990-09-11 Hitachi Ltd 真空処理装置
JPH05166730A (ja) * 1991-12-12 1993-07-02 Sony Corp 半導体製造装置
US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
EP0601615A1 (de) * 1992-12-08 1994-06-15 Koninklijke Philips Electronics N.V. Halbleitersherstellungsmethode, bei der ein Halbleiterkörper temporär für einen Verfahrenschnitt an einem weiteren Körper befestigt wird
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
US5437757A (en) * 1994-01-21 1995-08-01 Applied Materials, Inc. Clamp ring for domed pedestal in wafer processing chamber
WO1995023427A2 (en) * 1994-02-17 1995-08-31 Varian Associates, Inc. Apparatus for thermal treatment of thin film wafer
US6187134B1 (en) * 1999-07-09 2001-02-13 The Board Of Trustees Of The Leland Stanford Junior University Reusable wafer support for semiconductor processing
US20010037862A1 (en) * 2000-05-02 2001-11-08 Akihiro Moriuchi Support-frame bonding apparatus
US20040060513A1 (en) * 2000-12-15 2004-04-01 Yasuhiko Kojima Processing method and processing apparatus

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239400A (ja) * 1984-05-11 1985-11-28 Sumitomo Electric Ind Ltd 化合物半導体のアニ−ル法
JPH0364040A (ja) * 1989-08-02 1991-03-19 Hitachi Ltd 試料ホルダ
JPH0717148Y2 (ja) 1992-07-28 1995-04-19 日電アネルバ株式会社 基板装置
JPH0653308A (ja) * 1992-07-31 1994-02-25 Fujitsu Ltd 基板装着方法
US5966623A (en) * 1995-10-25 1999-10-12 Eastman Kodak Company Metal impurity neutralization within semiconductors by fluorination
US5917203A (en) * 1996-07-29 1999-06-29 Motorola, Inc. Lateral gate vertical drift region transistor
JPH11330214A (ja) * 1998-05-19 1999-11-30 Shinko Electric Ind Co Ltd 加熱装置およびこれに用いるガイドリング
US6187135B1 (en) * 1999-03-30 2001-02-13 Sun Ho Chung Process for making recycled paper having improving strength properties
JP3841988B2 (ja) * 1999-09-30 2006-11-08 株式会社吉野工業所 エアゾール式噴霧器
US6593168B1 (en) * 2000-02-03 2003-07-15 Advanced Micro Devices, Inc. Method and apparatus for accurate alignment of integrated circuit in flip-chip configuration
JP3771833B2 (ja) * 2001-11-14 2006-04-26 三菱重工業株式会社 ウエハ支持装置及び半導体製造装置
SG113448A1 (en) * 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
JP4067858B2 (ja) * 2002-04-16 2008-03-26 東京エレクトロン株式会社 Ａｌｄ成膜装置およびａｌｄ成膜方法
JP3988676B2 (ja) * 2003-05-01 2007-10-10 セイコーエプソン株式会社 塗布装置、薄膜の形成方法、薄膜形成装置及び半導体装置の製造方法
JP2005197464A (ja) 2004-01-07 2005-07-21 Rohm Co Ltd 半導体装置の製造方法
JP2006013269A (ja) * 2004-06-29 2006-01-12 Sanyo Electric Co Ltd 気相成長装置および気相成長方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
JPH02228035A (ja) * 1989-03-01 1990-09-11 Hitachi Ltd 真空処理装置
JPH05166730A (ja) * 1991-12-12 1993-07-02 Sony Corp 半導体製造装置
EP0601615A1 (de) * 1992-12-08 1994-06-15 Koninklijke Philips Electronics N.V. Halbleitersherstellungsmethode, bei der ein Halbleiterkörper temporär für einen Verfahrenschnitt an einem weiteren Körper befestigt wird
US5437757A (en) * 1994-01-21 1995-08-01 Applied Materials, Inc. Clamp ring for domed pedestal in wafer processing chamber
WO1995023427A2 (en) * 1994-02-17 1995-08-31 Varian Associates, Inc. Apparatus for thermal treatment of thin film wafer
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
US6187134B1 (en) * 1999-07-09 2001-02-13 The Board Of Trustees Of The Leland Stanford Junior University Reusable wafer support for semiconductor processing
US20010037862A1 (en) * 2000-05-02 2001-11-08 Akihiro Moriuchi Support-frame bonding apparatus
US20040060513A1 (en) * 2000-12-15 2004-04-01 Yasuhiko Kojima Processing method and processing apparatus

Also Published As

Publication number Publication date
JP5080043B2 (ja) 2012-11-21
KR20080020547A (ko) 2008-03-05
CN101136350A (zh) 2008-03-05
KR101388204B1 (ko) 2014-04-29
US8703626B2 (en) 2014-04-22
EP1895567A2 (de) 2008-03-05
JP2008060401A (ja) 2008-03-13
US20080052901A1 (en) 2008-03-06

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