EP1838639A1 - Agent pouvant etre applique par impression pour l'attaque de couches de dioxyde de silicium et de nitrure de silicium - Google Patents

Agent pouvant etre applique par impression pour l'attaque de couches de dioxyde de silicium et de nitrure de silicium

Info

Publication number
EP1838639A1
EP1838639A1 EP05818404A EP05818404A EP1838639A1 EP 1838639 A1 EP1838639 A1 EP 1838639A1 EP 05818404 A EP05818404 A EP 05818404A EP 05818404 A EP05818404 A EP 05818404A EP 1838639 A1 EP1838639 A1 EP 1838639A1
Authority
EP
European Patent Office
Prior art keywords
etching
medium according
etching medium
acid
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05818404A
Other languages
German (de)
English (en)
Inventor
Werner Stockum
Armin Kuebelbeck
Sylke Klein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of EP1838639A1 publication Critical patent/EP1838639A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a novel printable etching medium with non-Newtonian flow behavior for etching surfaces in the
  • the present invention furthermore also relates to etching and doping media which are suitable both for etching inorganic layers and for doping underlying layers.
  • etching and doping media are suitable both for etching inorganic layers and for doping underlying layers.
  • they are corresponding particle-containing compositions, by means of which very selectively very fine structures can be etched without damaging or attacking adjacent surfaces.
  • a crystalline silicon solar cell usually consists of a p-type substrate into which a homogeneously thick layer of an n-type substance, for example phosphorus, is diffused on the front side.
  • a metallically conductive contact is applied to dissipate the current generated under the incidence of light.
  • the contact is usually produced by means of screen printing technology.
  • silicon nitride layers are to be etched.
  • the methods used must be modified and the etching pastes adapted in a suitable manner.
  • the surfaces of crystalline silicon solar cells are coated with thin inorganic layers during the manufacturing process, and possibly also after its end. These layers have strengths in the range of 20 to 200 nm, in most cases in the range of 50 to 150 nm.
  • openings in the surface of the solar cell can be used, for example, to produce a so-called selective emitter, also called a 2-stage emitter.
  • a high n-type doping preferably by diffusing phosphor, is produced in the partial openings of a diffusion barrier located on the silicon in a subsequent diffusion step.
  • inorganic surfaces are understood as meaning oxide and nitride-containing compounds of silicon, in particular silicon oxide and silicon nitride surfaces.
  • the mode of action of such diffusion barriers are known to the person skilled in the art and described in the literature [A. Goetzberger; Voss; J. Knobloch, Solar Energy: Photovoltaics, Teubner Study Books Stuttgart 1997, pp 40; 107].
  • These diffusion barriers can be produced in many ways:
  • Very dense silicon dioxide layers are obtained, for example, by temperature treatment of silicon in an oxygen-containing atmosphere at temperatures in the region of 900 ° C. (thermal oxide).
  • the applied SiO 2 layer also remains as a reflection-reducing passivation layer. This is frequently the case in particular with thermally grown SiO 2 .
  • Silicon nitride layers are used less as diffusion barriers in the art of crystalline solar cells, although in principle they are also suitable. Silicon nitride layers are used essentially as a passivation and antireflection layer.
  • silicon nitride layers In the production of crystalline silicon solar cells, it is advantageous to be able to selectively produce openings in silicon nitride layers.
  • electrically conductive pastes may be mentioned here.
  • these metal pastes are "fired" through the silicon nitride layer at temperatures in the range of 600 ° C., thereby allowing electrical contact with the emitter layer in the "Fire-Through-Process" crystal defects and metallic contamination in the underlying silicon. Due to the system, the passivation layer is also completely destroyed by the overlying printed metal paste.
  • a unitary mass is e.g. Quartz glass, window glass, borosilicate glass, as well as thin layers of these materials on other substrates (eg ceramics, metal sheets, silicon wafers) by various methods known in the art (CVD, PVD, spin-on, thermal oxidation, etc.) are produced ,
  • glasses are understood as meaning silicon oxide and silicon nitride-containing materials which are present in the solid amorphous state of matter without crystallization of the glass components and which have a high degree of disorder in the microstructure due to a lack of long-range organization.
  • doped glasses such as borosilicate, Phosphorsilikat-, Borophosphorsili- katgläser, color, milk, crystal glasses, optical glasses
  • SiO 2 and other components in particular elements such as calcium, sodium, aluminum, lead, lithium, magnesium , Barium, potassium, boron, beryllium, phosphorus, gallium, arsenic, antimony, lanthanum, zinc, thorium, copper, chromium, manganese, iron, cobalt, nickel, molybdenum, vanadium, titanium, gold, platinum, palladium, silver , Cerium, cesium, niobium, tantalum, zirconium, neodymium, praseodymium, which occur in the form of oxides, carbonates, nitrates, phosphates, sulfates and / or halides in the glasses or act as doping elements in the glasses.
  • Doped glasses are z.
  • the silicon nitride may also contain other elements such as boron, aluminum, gallium, indium, phosphorus, arsenic, or antimony.
  • crystalline systems are defined as silicon oxide-based systems that do not fall under the definition given above of the amorphous SiO 2 glasses and are based on silicon dioxide.
  • the salts and esters of orthosilicic acid and their condensation products be generally referred to by the expert as silicates - and quartz and glass ceramics.
  • SiO 2 -based systems which are composed of SiO 2 or "discrete” and / or linked [SiO 4 ] tetrahedra, such as island groups -, ring, chain, band, layer, framework silicates and other components, in particular elements / components such as calcium, sodium, aluminum, lithium, magnesium, barium, potassium, beryllium, scandium, manganese, iron, titanium, Zirconium, zinc, cerium, yttrium, oxygen, hydroxyl groups, halides.
  • silicon nitride-based systems all crystalline and semicrystalline (usually referred to as microcrystalline) systems are defined below, which do not fall under the above given definition of the amorphous silicon nitride glasses / layers. These include the Si 3 N 4 in its modifications Ci-Si 3 N 4 and ß-Si 3 N 4 and all crystalline and semi-crystalline SiN x -, SiN x : H layers.
  • the crystalline silicon nitride may contain other elements such as boron, aluminum, gallium, indium, phosphorus, arsenic, antimony.
  • etchants ie of chemically aggressive compounds
  • the goal is to completely remove the layer to be etched.
  • the end of the etching is achieved by the impact with a largely resistant to the etchant layer.
  • partial etching of a layer to a usually defined desired thickness Etch structures on silicon oxide and silicon nitride based glasses and other silicon oxide and silicon nitride based systems:
  • any structures can be selective in silica and silicon nitride based glasses and others
  • the laser beam scans the entire etching pattern point by point or line by line in vector-oriented systems on the glass, which in addition to a high degree of precision also requires considerable adjustment and time.
  • Photolithography production of a negative or positive of the etching structure (depending on the paint), coating of the substrate surface (eg by spin coating with a liquid photoresist), drying of the photoresist, exposure of the coated substrate surface, development, rinsing, if necessary drying
  • Dipping process eg wet etching in wet-chemical benches: Immersion of the substrates in the etching bath, etching, repeated rinsing in H 2 O cascade sinks, drying • Spin-on or spray method: The etching solution is applied to a rotating substrate, the etching process can be carried out with / without energy input (eg IR or UV irradiation), followed by rinsing and drying
  • the photoresist covering the protective areas of the substrate must be removed. This can be done by solvents, such as acetone, or dilute aqueous alkaline solutions. Finally, the substrates are rinsed and dried.
  • silicon oxide and silicon nitride-based glasses and other silicon oxide and silicon nitride-based systems and their layers of variable thickness over the entire surface or only to a certain depth wet etching processes are predominantly used.
  • Silicon nitride-based systems and their layers of variable thickness are immersed in etching baths, which usually contain the toxic and highly corrosive hydrofluoric acid and optionally additives of other mineral acids.
  • etching media in the form of printable, homogeneous, particle-free etching pastes with non-Newtonian flow behavior for etching inorganic, glassy amorphous or crystalline surfaces, in particular of glasses or ceramics, preferably on SiO 2 - or silicon nitride-based systems, as well as the use of these etching media described.
  • these particle-free media in particular when printing on surfaces, problems resulted from inadequate stamina of the printed lines, dots or structures (insufficient structural integrity), resulting in a significant broadening of the originally printed lines (bleeding of the etching species on the substrate).
  • particulate etch pastes are used to etch a transparent conductive layer (eg, ITO).
  • the etching pastes used are prepared from molten water of crystallization containing iron chloride, glycerol and polymer particles. These compositions are suitable for etching lines with a width of about 1 mm. Experiments have shown that these etch pastes are not suitable for etching very thin lines with a width of less than 1 mm cleanly and without defects, regardless of whether polymer particles with a diameter of 0.01 microns or 30 microns for the production the pastes are used.
  • etching medium for etching inorganic, glassy or crystalline surfaces selected from the group of glasses based on silicon oxide and the glasses based on silicon nitride dissolved, which polymer particles consisting of a material , selected from the group consisting of polystyrene, polyacrylic, polyamide, polyimide, polymethacrylate, melamine, urethane, benzoguanine, phenolic resin, silicone resin, fluorinated polymers (PTFE, PVDF etc.), and micronized wax, contains in the presence of a corrosive component , Solvent, thickener, optionally at least one inorganic and / or organic acid, and optionally additives such as defoamers, thixotropic agents, leveling agents, deaerators, adhesion promoters.
  • the etching medium according to the invention is effective even at temperatures of 15 to 50 ° C or can optionally be activated by
  • the present invention furthermore relates to a method for etching and optionally for simultaneous doping of inorganic, glassy, crystalline surfaces according to claims 29 and 33.
  • Special Aus - Designs of the use of the etching pastes according to the invention are the subject matter of claims 19 to 28.
  • the new etching pastes with thixotropic, non-Tonton properties are used to silica or
  • the paste is printed on the surface to be etched in a single process step and removed again after a predetermined exposure time. In this way, the surface is etched and patterned at the printed areas, while leaving unprinted areas in their original condition.
  • the surface to be etched may be a surface or partial surface of silicon oxide or silicon nitride-based glass and other silicon oxide and silicon nitride-based systems, and / or a surface or partial surface on a porous and non-porous layer of glass and other silicon oxide and silicon nitride be based on a carrier material.
  • a suitable process with a high degree of automation and throughput uses the printing technology for the transfer of the etching paste to the substrate surface to be etched.
  • the screen, stencil, tampon, stamp, ink-jet printing processes are printing processes known to the person skilled in the art. Manual application is also possible.
  • the inventive printable, homogeneous, particle-free etching pastes with non-Newtonian flow behavior over the entire surface or according to the ⁇ tz Modellvorlage only at the points where an etching is desired.
  • the etching process can take place with or without energy input, for example in the form of heat radiation (with IR emitter).
  • the actual etching process is then terminated by washing the surfaces with water and / or a suitable solvent. Namely, after the etching has taken place, the printable, polymer particle-containing etching pastes with non-Newtonian flow behavior are rinsed off the etched surfaces with a suitable solvent.
  • the etching paste according to the invention has a viscosity in the range from 10 to 500 Pa s, preferably from 50 to 200 Pa s.
  • the viscosity is the substance-dependent proportion of the frictional resistance, which counteracts the movement when moving adjacent liquid layers. According to Newton, the shear resistance in a liquid layer between two parallel arranged and relatively moving sliding surfaces is proportional to that
  • the proportionality factor is a substance constant, which is called dynamic viscosity and has the dimension m Pa s.
  • the proportionality factor is pressure and temperature dependent. The degree of dependency is determined by the material composition.
  • Inhomogenously composed liquids or substances have non-Newtonian or pseudoplastic properties.
  • the viscosity of these substances is additionally dependent on the shear rate.
  • Particles which are particularly suitable for the purpose according to the invention may consist of the following materials:
  • PTFE fluorinated polymers
  • particulate thickeners may be added to the etching medium in amounts of from 1 to 50% by weight, advantageously in the range from 10 to 50% by weight, in particular from 25 to 35% by weight.
  • particulate polymeric thickeners based on
  • the particulate thickening leads to an improved staying power of the etching medium.
  • the particles form a skeletal structure in the etching medium. Similar structures are known to the expert by highly disperse silica (eg Aerosil ®).
  • highly disperse silica eg Aerosil ®
  • broadening of the printed structures by tiling can be largely prevented or at least severely limited by the present invention.
  • the printed area, and thus covered by paste therefore largely corresponds to the area specified in the screen or stencil layout.
  • silica or modified silica can not be used for thickening of the etching medium due to their reactivity with respect to the etching component used.
  • silica in the presence of silica, a chemical reaction with NH 4 HF 2 takes place when this serves as an etching component.
  • particulate thickening lines are also printed using the same strainers or stencils during pressing lines of higher printing height with the same width than when using corresponding particle-free pastes, as described for example in WO 01/83391 A. This simultaneously leads to a higher order per unit area of etching component. If thicker silicon dioxide or silicon nitride layers (> 100 nm) are to be etched, this is of particular advantage for complete etching.
  • Etching paste With targeted selection of the added particles, surprisingly, an increased etch rate and thus a significantly increased etch depth are achieved with the same amount of added etching component.
  • Corresponding etching media may contain the various forms of phosphoric acid or suitable phosphoric acid salts or compounds which are decomposed on heating to the corresponding phosphoric acid as etching and doping components.
  • ortho-phosphoric acid, meta-phosphoric acid, pyro-phosphoric acid, or salts thereof, and in particular the ammonium salts ((NH 4 ) 2 HPO 4 , NH 4 H 2 PO 4 , (NH 4 ) 3 PO 4 ) as well as other compounds, which form one of these compounds during their thermal decomposition, are capable of completely etching away, at temperatures above 250 ° C., silicon nitride layers with a layer thickness of 70 nm within a few seconds to minutes. At 300 ° C, the etching time is about 60 seconds.
  • the solvents, etching components, thickeners, particles and additives are mixed successively with one another and stirred for a sufficient time until a viscous paste with thixotropic properties has formed.
  • the stirring can be carried out with heating to a suitable temperature. Usually, the components are stirred together at room temperature.
  • Preferred uses of the printable etching pastes according to the invention result for the described methods for structuring oxide layers applied to a carrier material, for provide solar cells with selective emitter layer on the light incidence side and for producing solar cells with selective emitter layer on the light incidence side and back surface field on the back side.
  • the etching pastes can pass through a fine mesh screen containing the printing stencil
  • Etching pastes also burn-in (fired through the dielectric layers) omitted and the applied etching pastes are washed off after a certain exposure time with a suitable solvent or solvent mixture. The etching effect is stopped by the washing.
  • Particularly suitable printing methods are essentially screen-printed screen printing or stencil printing without bounce.
  • the distance a of a screen is usually several 100 microns with an angle ⁇ between the edge of the squeegee, which pushes the ⁇ tzdruckpaste on the screen, and the
  • the screen is held by a screen frame while the squeegee is passed over the screen at squeegee speed v and squeegee pressure P.
  • the etching paste is pushed over the sieve.
  • the screen touches the substrate linearly on the doctor blade width.
  • the screen printing paste present in the free sieve meshes is largely transferred to the substrate. No screen printing paste is transferred to the substrate in the areas covered by the sieve mesh. This makes it possible to selectively transfer screen printing paste to certain areas of the substrate.
  • the lifting of the squeegee takes place from the sieve.
  • the sieve is stretched evenly with a sieve tensioner with hydraulic / pneumatic pulling and clamping device.
  • the control of the wire tension is done by defined sag of the screen of a certain area at a certain weight with a dial gauge.
  • P squeegee pressure
  • V printing speed
  • V jump
  • a path of the squeegee
  • Printing screens used herein are usually made of plastic or steel wire mesh. It is possible for the person skilled in the art, depending on the desired layer thickness and line width, to select fabrics with different wire diameters and mesh sizes. These fabrics are structured directly or indirectly with photosensitive materials (emulsion layer). For the printing of the finest lines and the necessary high
  • metal stencils can be used, which are also provided directly or indirectly with a hole structure or line structure.
  • an etching paste as described, for example, in Example 1, is produced.
  • a thermal SiO 2 of about 100 nm thickness can be selectively removed within 60 seconds at 50 ° C. by the screen printing method.
  • the etching is then terminated by immersing the Si wafer in water and then rinsing with the aid of a finely distributed water jet.
  • wafers are selected from p-doped Cz-silicon with ⁇ 100> orientation. In these, texturing on the surface can be generated by a short, basic etching, which improves the light incidence geometry for reflection reduction.
  • On the back of a thin doping lacquer layer containing a boron-containing compound spin coated and dried.
  • the prepared wafers are placed in a rack and placed in a preheated to 1000 to 1100 ° C oven.
  • An oxygen atmosphere is set in the furnace so that an oxide layer is formed directly on all surfaces of the wafer not covered by the boron doping lacquer layer. At the same time, boron is expelled from the dopant layer and diffuses into the back of the wafer.
  • these oxide layers can be formed as masks for high n + phosphorus dopants for the formation of selective emitter layers, while in the masked regions a significantly lower n + doping is desired.
  • the application of the electrical contacts on the front and back of the cell takes place. This can be done by two successive Siebdruck intimide with a paste that can contain conductive silver particles and / or aluminum in addition to the binders and oxidic additives. After printing, the printed contacts are baked at approx. 700 to 800 ° C.
  • the now ready-to-use paste can be printed with a 280 mesh stainless steel mesh sieve.
  • polyester or similar sieve materials can be used.
  • Etching paste consisting of a particulate thickener
  • the now ready-to-use paste can be printed with a 280 mesh stainless steel mesh sieve.
  • polyester or similar sieve materials can be used.
  • the etch paste produced has proven to be storage stable for a long time while retaining the advantageous etching properties.
  • compositions according to the invention having advantageous properties for etching SiNx are given in the following tables.
  • EKRA E1 wafer Monocrystalline silicon wafer, with 100 nm thermal SiO 2
  • EKRA E1 wafer monocrystalline silicon wafer, with 100 nm thermal SiO 2 etching: 5O ° C for 30s heated
  • the etched line had an average width of 105 ⁇ m.

Abstract

La présente invention concerne un nouvel agent d'attaque pouvant être appliqué par impression et possédant des propriétés rhéologiques non newtoniennes, lequel agent est destiné à l'attaque de surfaces dans la fabrication de cellules solaires, ainsi que l'utilisation dudit agent. L'invention concerne, en particulier, des compositions correspondantes, contenant des particules et au moyen desquelles des structures ultrafines peuvent être attaquées de manière sélective, sans risque d'endommager ou d'attaquer des surfaces adjacentes.
EP05818404A 2005-01-11 2005-12-19 Agent pouvant etre applique par impression pour l'attaque de couches de dioxyde de silicium et de nitrure de silicium Withdrawn EP1838639A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005001343 2005-01-11
DE102005007743A DE102005007743A1 (de) 2005-01-11 2005-02-18 Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten
PCT/EP2005/013657 WO2006074791A1 (fr) 2005-01-11 2005-12-19 Agent pouvant etre applique par impression pour l'attaque de couches de dioxyde de silicium et de nitrure de silicium

Publications (1)

Publication Number Publication Date
EP1838639A1 true EP1838639A1 (fr) 2007-10-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP05818404A Withdrawn EP1838639A1 (fr) 2005-01-11 2005-12-19 Agent pouvant etre applique par impression pour l'attaque de couches de dioxyde de silicium et de nitrure de silicium

Country Status (8)

Country Link
US (1) US7837890B2 (fr)
EP (1) EP1838639A1 (fr)
JP (1) JP5107722B2 (fr)
KR (2) KR20070102510A (fr)
DE (1) DE102005007743A1 (fr)
MY (1) MY146508A (fr)
TW (1) TWI315724B (fr)
WO (1) WO2006074791A1 (fr)

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TWI315724B (en) 2009-10-11
US20080121621A1 (en) 2008-05-29
TW200700340A (en) 2007-01-01
MY146508A (en) 2012-08-15
US7837890B2 (en) 2010-11-23
KR20130054421A (ko) 2013-05-24
JP2008527698A (ja) 2008-07-24

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