EP1791652B1 - Device and process for curing using energy-rich radiation in an inert gas atmosphere - Google Patents

Device and process for curing using energy-rich radiation in an inert gas atmosphere Download PDF

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Publication number
EP1791652B1
EP1791652B1 EP05753770A EP05753770A EP1791652B1 EP 1791652 B1 EP1791652 B1 EP 1791652B1 EP 05753770 A EP05753770 A EP 05753770A EP 05753770 A EP05753770 A EP 05753770A EP 1791652 B1 EP1791652 B1 EP 1791652B1
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EP
European Patent Office
Prior art keywords
inert gas
substrate
radiation
interior
gas
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Not-in-force
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EP05753770A
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German (de)
French (fr)
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EP1791652A2 (en
Inventor
Andreas Daiss
Erich Beck
Manfred Biehler
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BASF SE
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BASF SE
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Publication of EP1791652B1 publication Critical patent/EP1791652B1/en
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    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • G21K5/02Irradiation devices having no beam-forming means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0486Operating the coating or treatment in a controlled atmosphere
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065After-treatment
    • B05D3/066After-treatment involving also the use of a gas
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254After-treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065After-treatment
    • B05D3/067Curing or cross-linking the coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/068Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using ionising radiations (gamma, X, electrons)

Definitions

  • the invention relates to a device and a method for producing molding compositions and coatings on substrates by curing radiation-curable compositions under an inert gas atmosphere by irradiation with high-energy radiation.
  • This oxygen inhibition effect can be achieved by the use of high amounts of photoinitiator, by co-using coinitiators, for. Amines, high energy, high dose UV radiation, e.g. be reduced with high pressure mercury lamps or by the addition of barrier-forming waxes.
  • Radiation curable compositions may include both volatile diluents, such as water or organic solvents, and processed in the absence of such diluents.
  • volatile diluents such as water or organic solvents
  • the process of radiation curing is suitable for coatings, which are carried out in industrial applications or in medium or small crafts or in the domestic sector. So far, however, the complex implementation of the method and the devices required for this purpose, in particular the UV lamps, an application of radiation curing in the non-industrial areas prevented.
  • WO 01/39897 describes a method for radiation curing under an inert gas atmosphere that is heavier than air, preferably carbon dioxide.
  • a preferred embodiment for curing described therein takes place in a dip tank.
  • the object of the invention was to provide a device with which a radiation curing can be performed and you can keep the consumption of inert gas as low as possible.
  • Shielding gases which are heavier than air and those which are lighter than air can be used in the device according to the invention.
  • the molecular weight of an inert gas which is heavier than air is therefore greater than 28.8 g / mol (corresponds to the molecular weight of a gas mixture of 20% oxygen O 2 and 80% nitrogen N 2 ), preferably greater than 30 g / mol, more preferably at least 32 g / mol, in particular greater than 35 g / mol.
  • Suitable examples include noble gases such as argon, hydrocarbons and halogenated hydrocarbons. Particularly preferred is carbon dioxide.
  • the supply of carbon dioxide may be from pressure vessels, filtered combustion gases, e.g. of natural gas or hydrocarbons, or preferably as dry ice.
  • the supply of dry ice is considered advantageous, in particular for applications in the non-industrial or in the small industrial sector, since solid dry ice can be transported and stored as a solid in simple containers insulated with foams.
  • the dry ice can be used as such, it is then in gaseous form at the usual temperatures of use.
  • Another advantage of using dry ice is the cooling effect that can be used to condense and remove volatile paint components, such as solvents or water (see below).
  • Shielding gases which are lighter than air are those having a molecular weight of less than 28.8 g / mol, preferably not more than 28.5 g / mol, more preferably not more than 28.1 g / mol.
  • Examples include molecular nitrogen, helium, neon, carbon monoxide, water vapor, methane or nitrogen-air mixtures (so-called lean air), particularly preferably nitrogen, water vapor and nitrogen-air mixtures, very particularly preferably nitrogen and nitrogen-air mixtures. Mixtures, in particular nitrogen.
  • the supply of inert gases which are lighter than air, can preferably be carried out from pressure vessels or from oxygen-depleted exhaust gases, for example, from oxidations or coke oven exhaust gases or by separation of oxygen from gas mixtures, such. Air or combustion gases, over membranes.
  • protection gas and “inert gas” are used interchangeably in this document and designate those compounds which, when irradiated with high-energy radiation, do not react significantly with the coating compositions and do not adversely affect their curing with respect to speed and / or quality. In particular, this is understood to mean a low oxygen content (see below). In it “does not mean Substantially react "that the inert gases under the applied in the process irradiation with high-energy radiation to less than 5 mol% per hour, preferably less than 2 mol% per hour and more preferably less than 1 mol% per hour with the coating materials or react with other substances present within the device.
  • the protective gas (mixture) is filled into the device and the air displaced from it.
  • the device now contains a protective gas atmosphere into which the substrate, which is coated with the radiation-curable composition, or the shaped body can be guided. Subsequently, the radiation hardening can take place.
  • the average oxygen content (O 2 ) in the inert gas atmosphere should be less than 15% by volume, preferably less than 10% by volume, more preferably less than 8% by volume, most preferably less than 6% by volume and especially less than 3% by volume %, in each case based on the total amount of gas in the protective gas atmosphere;
  • the particular difficulty to be considered is that three-dimensional substrates entrain oxygen into the device according to the invention (so-called scooping) and the oxygen content is therefore much more difficult to reduce than with two-dimensional objects such as films, webs or the like.
  • two-dimensional substrates by the device according to the invention also lower oxygen contents than in three-dimensional to achieve, for example up to less than 1% by volume, preferably less than 0.5% by volume, more preferably less than 0.1% by volume, especially preferably less than 0.05% by volume and in particular less than 0.01% by volume.
  • a protective gas atmosphere is understood to mean the gas volume during the irradiation with high-energy radiation, which surrounds the substrate at a distance of up to 10 cm from its surface.
  • Another advantage of curing in a protective gas atmosphere is that the distances between the lamps and the radiation-curable composition can be increased in relation to the curing in air. Overall, lower radiation doses can be used and a radiator unit can be used to cure larger areas.
  • dry ice as a protective gas
  • a feed of the device which may be storage containers for dry ice at the same time, easily done.
  • the monitoring of carbon dioxide consumption is directly determined by the consumption of dry ice solids. Dry ice sublimates at -78.5 ° C directly to gaseous carbon dioxide. As a result, atmospheric oxygen is displaced upwards out of the basin in a basin without swirling.
  • the residual oxygen can be determined with commercially available atmospheric oxygen meters. Because of the oxygen-reduced atmosphere in the device according to the invention and the risk of suffocation associated with it, suitable safety measures should be taken. Similarly, adequate ventilation and inert gas drainage should be ensured in adjacent work areas.
  • FIGS. 1 to 4 An example of such a device is in the FIGS. 1 to 4 shown.
  • the outer walls of the device according to the invention namely front 2 and rear 3 covers, upper 6 and lower 7 covers and side covers 4 and 5, together enclose the interior of the device first
  • partition walls 8 and 9 of the device according to the invention enclose in each case together with adjacent partition walls 9 and 8 respectively with the front or rear cover 2 or 3 and with the side panels 4 and 5 and the upper and lower covers 6 and 7 compartments throughout the Divide interior of the device.
  • a compartment is formed by enclosing this walls, which are thought to be extended over free spaces, if necessary, to close any gaps, for example, in the case of partitions 8, which are thought to be extended to the conceptual design of a compartment to the top cover 6 .
  • the number of compartments of the device according to the invention is at least 4, preferably at least 5 and more preferably at least 6.
  • the number of compartments is not limited in principle, it is preferably up to 15, more preferably up to 12, most preferably up to 10 and in particular up to 8.
  • the partitions 8 and 9 are substantially perpendicular to the lower 7 and upper 6 cover.
  • the angle ⁇ 1, the 8 and 7, and ⁇ 2, 9 and 6 include, by no more than 30 ° from vertical, preferably no more than 20 ° more preferably not more than 15 ° , in particular not more than 10 °, in particular not more than 5 ° and especially not at all, wherein in the construction of the device according to the invention in general the usual structural error limits are taken into account.
  • the device according to the invention saves space and occupies the least possible footprint.
  • the device allows at the same time a simple shielding against UV radiation to the outside, so that radiation sources without filters, e.g. against UV-C radiation, can be used for efficient radiation utilization.
  • the partitions 8 and 9 are up to the described deviation from the vertical parallel to the front 2 and rear 3 covers, which in turn can also deviate from the vertical.
  • All components of the device according to the invention are connected to each other so far that as little inert gas escapes, except from the input 12 or the output 13, from the interior, ie any cracks, gaps, slots or holes are sealed.
  • the dividing wall 8 with the upper cover 6 and the dividing wall 9 with the lower cover 7 leave enough space to convey the substrate through this gap.
  • the space between 8 and 6 leaves the space d1, the space between 9 and 7, the gap d2.
  • the gaps d1 and d2 are designed so that they leave enough space for the dimensions of the substrate in the conveying direction of the conveyor 12 .
  • the substrate can be conveyed through the device according to the invention in any desired orientation, an orientation in which the flow resistance and the turbulence caused by the movement of the substrate is minimized is preferred.
  • the projected in this orientation in the conveying direction cross-sectional area of the substrate is assumed in this document as the surface of the substrate.
  • the dimensions present in this orientation of the substrate as conveyed by the apparatus of the invention are used herein as the characteristic dimensions of the substrate.
  • the substrate is preferably conveyed through the device according to the invention such that its projected cross-sectional area perpendicular to the conveying direction is as small as possible or at least not more than 25% more than this minimum, preferably not more than 20%, particularly preferably not more than 15%, especially preferably not more than 10% and in particular not more than 5%.
  • the cross-sectional area through which the substrate is conveyed through the individual compartments in the device according to the invention, ie the surface perpendicular to the conveyor 12 should, in a preferred embodiment according to the invention, be at least three times the projected cross-sectional area of the substrate in the conveying direction, preferably four times.
  • the cross-sectional area should not be more than six times the area of the substrate, preferably not more than five times.
  • This cross-sectional area is, for example, the cross-sectional area Q1 which leaves the partitions 8 with the top cover 6 , ie, in the case of a square opening, the area d1 ⁇ b, or the cross-sectional area Q2 which leaves the partitions 9 with the bottom cover 7, in the case a square opening the area d2 • b, or the cross-sectional area Q3 , which is formed between the partitions and optionally the walls 2 or 3 , so in the case of a square opening the area d3 • b.
  • the height h of the device according to the invention should be at least twice the diameter d1 or d2, whichever is the larger, preferably at least three times.
  • the partitions 8 and 9 are designed in a preferred embodiment so that they are displaceable parallel to the upper and lower covers 6 and 7 in order to adapt the device according to the invention to different characteristic substrate dimensions.
  • the partitions may be slid in guide rails or fixed in fits or receptacles in the side and / or top and bottom covers.
  • the partitions 8 and 9 are designed in a further preferred embodiment so that the distance d1 or d2 to the lower or upper covers 7 and 6 is variable to adapt the device according to the invention to different characteristic substrate dimensions.
  • a plurality of partitions may be arranged telescopically together, so that they can be extended or shortened by extending.
  • the distances d1, d2, d3 and b are preferably selected so that the distances between the substrate and the walls are as equal as possible in order to ensure the most uniform possible flow around the substrate in the inert atmosphere.
  • the cross-sectional area formed thereby can be round, oval, ellipsoidal, quadrangular, trapezoidal, rectangular, square or irregular in shape.
  • the cross-sectional area is preferably quadrangular and particularly preferably rectangular or square.
  • inlet 13 and the outlet 14 can only be covers as openings in the front 2 or rear 3, or possibly also in a lateral 4 or 5 cover.
  • input 13 and output 14 may also be mounted in the upper 6 or lower cover 7 .
  • input 13 and / or output 14 are made extended so that the substrate is conveyed a distance 15 of length f1 through the input 13 and / or a distance 16 of length f2 through the output 14 .
  • These distances f1 and / or f2 may, for example, be 0 to 10 times the parameters d1 or d2, depending on which of these two parameters is the larger, preferably 0 to 5 times, particularly preferably 0 to 2-fold, most preferably 0.5 to 2-fold and especially 1 to 2-fold ( FIG. 1 ).
  • the input 13 and / or output 14 are designed so that the substrate is enclosed as closely as possible. This can be achieved, for example, so that the openings of input and / or output come as close as possible to the dimensions of the substrate and not, as required above, form a multiple of the substrate cross-section. If the input and / or output are extended, the cross-sectional area of the extended version can taper towards the input or output.
  • input 13 and / or output 14 are provided with devices which reduce leakage of the inert gas contained in the device from the input or output. Since the substrate at the entrance is usually coated with an uncured, so sticky coating mass, such devices should not touch the substrate at the entrance.
  • Pre-and post-flooders at the inputs and / or outputs are also suitable.
  • Pre- and post-floods are inert gas-containing basins with the purpose of separating air vortex zones from the irradiation zone.
  • the inert gas tank can be extended from the exposure zone both in the height and on both sides in the width. The dimensions of the receiving waters are primarily dependent on the rate of entry and exit and on the geometry of the substrate.
  • both input and output are provided with such devices, it is a preferred embodiment to open and close the input and output simultaneously with these devices. That is, in the period in which a substrate passes through the entrance and the local device, such as a door, sliding door, Aperture or lock, is open, at the same time a hardened substrate passes through the output and the device located there is also open.
  • the local device such as a door, sliding door, Aperture or lock
  • the device according to the invention is set up in a drafty location, then it may be preferable to close the input and output reciprocally, since such a passage through the device according to the invention can be avoided.
  • the inlet and / or outlet can also be provided with devices which reduce turbulence or flow.
  • devices which reduce turbulence or flow.
  • These may be, for example, guide plates 17 or grids arranged along the conveying direction, a plurality of finely meshed nets connected in series, or guide plates 18 arranged transversely to the conveying direction, which preferably are adapted as close as possible to the substrate cross section. FIGS. 5 to 8 ).
  • the inlet 13 and / or outlet 14 of the device according to the invention in the lower half of the device, relative to the height h of the device, attached, more preferably in the lower third and most preferably as far as possible down or in the lower cover 7 (FIG. FIG. 1 ).
  • the conveying mechanism 12 serves to convey the substrate S through the apparatus.
  • Such funding mechanisms are known per se and not essential to the invention.
  • the conveying mechanism can be arranged through the device above, below or laterally of the substrate.
  • the substrate is moved through the device by a one-sided or two-sided laterally arranged conveying mechanism. This has the advantage that no abrasion from the conveying mechanism falls on the possibly still uncured substrate.
  • the promotion of the substrate can be done for example on conveyor belts, chains, ropes or rails. If desired, the substrate may also rotate within the device of the invention, but this is less preferred in the present invention.
  • the conveying device 12 can consist of rollers and / or rollers, via which the substrate is conveyed.
  • the device according to the invention contains at least one radiation source 10,
  • the radiation curing can be carried out with electron beams, X-rays or gamma rays, NIR, IR and / or UV radiation or visible light. It is an advantage of the inventive hardening under inert gas atmosphere that the radiation curing can be done with a wide variety of sources of radiation and low intensity.
  • Radiation sources which can be used according to the invention are those which are capable of emitting high-energy radiation.
  • High-energy radiation is in this case electromagnetic radiation in the spectral NIR, VIS and / or UV range and / or electron radiation.
  • NIR radiation electromagnetic radiation in the wavelength range of 760 nm to 2.5 microns, preferably from 900 to 1500 nm is designated.
  • the radiation dose for UV curing which is usually sufficient to cure the coating composition, is in the range from 80 to 5000 mJ / cm 2 .
  • electron radiation is meant irradiation with high-energy electrons (150 to 300 keV).
  • Preference according to the invention is given to NIR and / or UV radiation and particularly preferably to radiation having wavelengths below 500 nm. Very particular preference is given to radiation having a wavelength of less than 500 nm which has an exposure dose on the substrate of more than 100 mJ / sec within an exposure time of 10 seconds. cm 2 of the substrate surface.
  • broad band spectrum lamps that is, a distribution of emitted light over a range of wavelengths. Intensity maxima are preferably in the range below 430 nm.
  • Suitable radiation sources for radiation curing are, for example, low-pressure mercury lamps, medium-pressure lamps with high-pressure lamps and fluorescent tubes, pulse emitters, Metallhaiogenidstrahler, electronic flash devices, which Radiation curing without photoinitiator is possible, or Exccimerstrahler.
  • Mercury radiators can be doped with gallium or iron.
  • Radiation curing in the process according to the invention can also be effected with daylight or with lamps which serve as a substitute for daylight. These lamps emit in the visible range above 400 nm and have in comparison to UV lamps only little or no UV light components. Called e.g. Incandescent lamps, halogen lamps, xenon lamps.
  • pulsed lamps e.g. Photo flash lamps or high-power flash lamps (VISIT).
  • VISIT high-power flash lamps
  • a particular advantage of the method is the usability of low energy and low UV lamps, e.g. 500 watt halogen lamps, as they are used for general lighting purposes.
  • a high-voltage unit for power supply in the case of mercury vapor lamps
  • optionally light protection measures can be dispensed with.
  • any number of radiation sources can be used for the curing, each of which may be the same or different.
  • a radiation source arrangement adapted to the substrate geometry and to the conveying speed is also possible in order to expose specific areas more intensively.
  • At least a portion of the radiation sources and / or at least a part of existing reflectors is designed to be movable, for example on robot arms, so that, for example, shadow areas lying within substrates can also be exposed.
  • the duration of the irradiation depends on the desired degree of hardening of the coating or of the shaped body.
  • the degree of hardening can be determined on the decoating or on the scratch resistance, for example against the fingernail or against other objects such as pencil, metal or plastic tips.
  • the paint area usual resistance to chemicals, For example, solvents, inks, etc. suitable.
  • spectroscopic methods in particular Raman and infrared spectroscopy, or measurements of the dielectric or acoustic properties, etc., are suitable without damaging the painted surfaces.
  • the radiation sources usually provide a large amount of waste heat, which can be damaging to temperature-sensitive substrates, it may be useful not completely install the radiation sources within the interior of the device according to the invention, but to install the radiation sources so that cooling devices of the radiation sources outside the device according to the invention are mounted and illuminate the radiation sources in the device according to the invention.
  • the radiation sources are embedded in the upper 6 or lower cover 7 and / or in the lateral covers 4 and / or 5 and the housings and / or cooling units are located outside the device according to the invention.
  • the radiation sources are completely mounted within the device according to the invention, so that the waste heat can be used for an optionally required drying of the coating composition on the substrate (see below).
  • one or more reflectors may be provided in the device according to the invention, for example mirrors, aluminum or other metal foils or bare metal surfaces.
  • the surfaces of the walls or covers 2, 3, 4, 5, 6, 7, 8 and / or 9 may themselves be designed as reflectors.
  • the at least one radiation source 10 may be positioned in the device according to the invention with respect to the total path length of the conveyor by the device according to the invention preferably in the range of 25% of the total path length up to 80% of the total path length, more preferably in the range of 33% up to 75 % of the total path length, most preferably in the range of 40% to 75%, and more preferably in the range of 50% to 75% of the total path length.
  • This information refers to the path length of the conveyor by the device according to the invention, i. at the entrance, this path length is 0%, at the exit 100% and in the middle 50% of the total path length.
  • the at least one radiation source can also be distributed over a wide range, so that a zone is formed within which is irradiated.
  • At least one radiation source 10 is located in front of the gas supply device 11, viewed in the conveying direction of the conveying device 12, very particularly preferred is at least one radiation source 10 on the side covers 4 and / or 5 and / or on the partitions 8 and / or 9 ( FIG. 10 ).
  • the inert gas can be metered at any position by at least one gas supply means 11 in the inventive apparatus in principle.
  • the flow of inert gas can in principle be in cocurrent or countercurrent with respect to the conveying direction of the conveyor 12 move, preferably the inert gas is metered in so that the flow of inert gas between the inlet 13 and the distance at which the radiation curing of the substrate, moved in countercurrent to the conveying direction.
  • the inert gas is metered in the region around and / or after the last radiation source, more preferably within a quarter of the total path length of the conveyor by the inventive device before and / or behind the zone within which is irradiated, most preferably in the range from to up to 15% of the total path length before and up to 25% behind the zone in which irradiation takes place and in particular within the range of up to 5% of the total path length before and up to 15% behind the zone within which irradiation takes place.
  • a gas or gas mixture can be guided into the interior or formed there.
  • the latter is of interest, for example, when the inert gas in solid, for example dry ice, or liquid form, for example as condensate or under pressure, is added to the device according to the invention and then sublimated or evaporated there.
  • the inert gas is flow and vortex low in the device according to the invention passed, for example by Strömungs
  • Skrömungs were considered strictly or flow straightener, such as perforated plates, sieves, sintered metal, lattice, frits, beds, honeycomb or tubular structures, preferably perforated plates or grids.
  • the addition amount of the inert gas according to the invention is adapted so that it compensates for the losses of inert gas through any leaks or through the input and / or output. It is of course desirable to keep the consumption of inert gas as low as possible.
  • the metered addition of inert gas to compensate for the loss of inert gas in addition to the conveyed material displaced and exhausted inert gas volume not more than twice the internal volume of the device according to the invention per hour, more preferably not more than the simple of the internal volume, most preferably not more than 0.5 times and in particular not more than 0.25 times the internal volume of the device according to the invention per hour.
  • the inert gas is fed via a gas supply device 11 in the upper third of the device according to the invention, based on the height h, more preferably in the upper quarter and most preferably in the upper cover 6.
  • the inert gas when using an inert gas which is lighter than air, the inert gas is heated before, during or after the metered addition via a gas supply device 11 , for example to a temperature which corresponds at least to the temperature of the protective gas atmosphere to a temperature which is at least 10 ° C above the temperature of the protective gas atmosphere and very particularly preferably to a temperature which is at least 20 ° C above the temperature of the protective gas atmosphere.
  • the inert gas is fed via a gas supply device 11 in the lower third of the device according to the invention, based on the height h, more preferably in the lower quarter and most preferably in the lower cover 7.
  • the inert gas before, during or after the addition is cooled via a gas supply device 11 , for example to a temperature which is below the temperature of the protective gas atmosphere, particularly preferred to a temperature which is at least 10 ° C below the temperature of the protective gas atmosphere and very particularly preferably to a temperature which is at least 20 ° C below the temperature of the protective gas atmosphere.
  • the device according to the invention to use nitrogen and carbon dioxide simultaneously as inert gases, with nitrogen via a gas supply device 11 in the upper third the device according to the invention, based on the height h, supplied, particularly preferably in the upper quarter and very particularly preferably in the upper cover 6 and carbon dioxide via a gas supply device 11 in the lower third of the device according to the invention, based on the height h, fed, particularly preferably in lower quarter and most preferably fed in the lower cover 7 , is.
  • the nitrogen can be heated as described above and / or the carbon dioxide can be added cooled as described above.
  • a density gradient of the inert gases can be achieved within the device according to the invention by overlaying.
  • the side covers 2, 3, 4 and / or 5, as well as the upper and lower covers 6 and / or 7 are in a preferred embodiment thermostatted or insulated designed to keep a temperature balance between the device according to the invention and the environment as low as possible , By equalizing the temperature over the outer walls, unwanted convection currents could occur within the device.
  • the device according to the invention can have one or more manholes or accesses, through which the interior is accessible, for example, to move partitions, to change the distances d1 and / or d2 or to replace lamps.
  • the inert gas should be removed from the interior for safety reasons and the radiation sources switched off.
  • the application can be applied for example by spraying, filling, doctoring, brushing, rolling, rolling, pouring, laminating, dipping, flooding, brushing, etc. on the substrate.
  • the coating thickness is usually in a range of about 3 to 1000 g / m 2 and preferably 5 to 200 g / m 2 .
  • the substrate coated with a coating composition is dried at least partially within the apparatus according to the invention, ie, volatile components of the coating composition are largely removed within the apparatus.
  • volatile constituents may be, for example, in the coating composition contained solvents act.
  • esters such as butyl acetate or ethyl acetate, aromatic or (cyclo) aliphatic hydrocarbons, such as xylene, toluene or heptane, ketones, such as acetone, isobutyl methyl ketone, methyl ethyl ketone or cyclohexanone, alcohols such as ethanol, isopropanol, mono- or lower Oligoethylen- or -propylene glycols, mono- or di-etherified ethylene or propylene glycol ethers, glycol ether acetates such as methoxypropyl acetate, cyclic ethers such as tetrahydrofuran, carboxylic acid amides such as dimethylformamide or N-methylpyrrolidone and / or water.
  • esters such as butyl acetate or ethyl acetate
  • aromatic or (cyclo) aliphatic hydrocarbons such as xylene
  • the evaporation and / or evaporation of solvents in the drying step within the device according to the invention has the advantage that the gaseous solvents within the dust-free device contribute to the inert atmosphere, which reduces the inert gas consumption, and additionally exerts a plasticizing effect on the coating during curing, thereby this becomes more flexible. Therefore, it is advantageous according to the invention if the inert gas atmosphere present in the device according to the invention contains at least 2.5% by volume, preferably at least 5, particularly preferably at least 7.5 and very particularly preferably at least 10% by volume a proportion of one or more Having solvents.
  • the device according to the invention additionally has a condensation possibility 19 (FIG. FIG. 11 ), in which the solvents located in the inert gas atmosphere within the device according to the invention can be condensed out.
  • condensation options are preferably located at the input and / or output of the device according to the invention. These may be, for example, plate or shell-and-tube heat exchangers, cooling coils or cold fingers which are operated either with an external cooling medium in cocurrent or countercurrent, preferably in countercurrent to the conveying direction of the substrate, or preferably in the case of dry ice as the source of CO 2 as the inert gas within the apparatus to be operated with dry ice, which is generated at the same time inert gas within the apparatus and the solvent can be recovered.
  • the condensate is then collected and conveyed outside the device, for example by a siphon, effluent or spout, optionally with a siphon.
  • Such condensation and optionally reuse of the solvent significantly reduces emissions and solvent consumption.
  • the inert gas atmosphere and / or the coating composition over a period of at least 1 minute, preferably at least 2 min, more preferably at least 3 min and most preferably at least 5 min to a temperature of at least 50 ° C, preferably at least 60 ° C, more preferably at least 70 ° C and most preferably at least 80 ° C heated.
  • the heat for the drying can be introduced, for example, by utilizing the waste heat of the at least one radiation source 10 or via at least one additional heating device 20 , which is located between the input and irradiation of the coated substrates.
  • Such heaters 13 are known per se to those skilled in the art, it is preferably IR and / or NIR emitters that heat the coating composition.
  • NIR radiation is here electromagnetic radiation in the wavelength range of 760 nm to 2.5 microns, preferably from 900 to 1500 nm, with IR radiation, the wavelength range of 25 -1000 microns (far IR), and preferably 2.5 - 25 microns (middle IR).
  • radiation with a wavelength of 1 to 5 ⁇ m is preferably used.
  • the radiation curing is at least partially preferably carried out completely when the coating composition on the coated substrates has a temperature of 50 ° C or more, preferably of at least 60 ° C, more preferably of at least 70 ° C and most preferably of at least 80 ° C. In this case, it is of minor importance how the coating composition is brought to this temperature, whether by heating the inert gas atmosphere and / or by radiation sources 10 and / or by additional heating devices 20 and / or in another way.
  • the coating thus obtained has better properties.
  • the reason for this is unclear, for example, could be a reduced viscosity of the heated coating composition.
  • the residence time within the device depends on whether or not additional drying is to take place within the device according to the invention.
  • the residence time without drying within the device according to the invention ie from the passage of the substrate through the entrance to the passage of the exit, is usually at least one minute, preferably at least 2 minutes, more preferably at least 3 minutes, most preferably at least 4 minutes and especially at least 5 minute
  • the residence time without drying within the device according to the invention generally does not exceed 15 minutes, preferably it is not more than 12 minutes, particularly preferably not more than 10 minutes, very particularly preferably not more than 9 minutes and in particular not more than 7 minutes.
  • a higher residence time usually has no adverse effect on the curing of the coating composition, but also has no positive effect and thus leads to unnecessarily large devices.
  • the length of the winningeriniques 12 by the device according to the invention and the speed of conveying the substrate is adapted accordingly to this residence time.
  • the residence time of the substrate in the device depends, for example, on the substrate, as well as its size, weight and complexity of its structure, as well as reactivity, type (eg pigmentation), amount, thickness and area of the coating composition to be cured or of the coating containing it on the substrate from.
  • the conveying speed of three-dimensional objects through the device according to the invention can be, for example, 0.5 to 10 m / min, preferably 1 to 10 m / min, more preferably 2 to 8 m / min, most preferably 3 to 7 and in particular 5 m / min be.
  • Objects with gas-producing parts such as trim parts or housings for vehicles or machines, are conveyed similarly fast, but require additional measures to reduce the oxygen input, in particular by means of extended distances.
  • Three-dimensional objects are those whose coating with a coating composition could not be at least theoretically cured by direct irradiation from exactly one radiation source.
  • the conveying speed can be up to about 100m / min and for the fibers to over 1000 m / min.
  • the conveyor 12 may include, for example, rollers and / or rollers.
  • the device according to the invention should be set up in a draft-free location, since inert gas can already be sucked out of the device according to the invention by a slight flow which flows around the device.
  • inert gas can already be sucked out of the device according to the invention by a slight flow which flows around the device.
  • attention must be paid to adequate ventilation of the location of the device, in order to avoid inertization of the environment, which could jeopardize the operating personnel.
  • air flows which are present via air exchange at application and drying devices can be reduced by keeping corresponding distance to these application and drying devices or by redirecting or breaking these air flows with, for example, shielding walls.
  • Radiation-curable coating compositions contain radiation-curable compounds as binders. These are compounds with free-radically or cationically polymerizable ethylenically unsaturated groups.
  • the radiation-curable composition preferably contains from 0.001 to 12, more preferably from 0.1 to 8, and very particularly preferably from 0.5 to 7, moles of radiation-curable ethylenically unsaturated groups per 1000 g of radiation-curable compounds.
  • (meth) acrylate compounds such as polyester (meth) acrylates, polyether (meth) acrylates, urethane (meth) acrylates, epoxy (meth) acrylates, carbonate (meth) acrylates, silicone (meth) acrylates, acrylated polyacrylates.
  • At least 40 mol%, more preferably at least 60%, of the radiation-curable ethylenically unsaturated groups are (meth) acrylic groups.
  • the radiation-curable compounds may contain other reactive groups, e.g. Melamine, isocyanate, epoxide, anhydride, alcohol, carboxylic acid groups for additional thermal cure, e.g. B. by chemical reaction of alcohol, carboxylic acid, amine, epoxy, anhydride, isocyanate or melamine groups containing (dual cure).
  • other reactive groups e.g. Melamine, isocyanate, epoxide, anhydride, alcohol, carboxylic acid groups for additional thermal cure, e.g. B. by chemical reaction of alcohol, carboxylic acid, amine, epoxy, anhydride, isocyanate or melamine groups containing (dual cure).
  • the radiation-curable compounds may be e.g. as a solution, e.g. in an organic solvent or water, as an aqueous dispersion, as a powder.
  • the radiation-curable compounds and thus also the radiation-curable compositions are preferably free-flowing at room temperature.
  • the radiation-curable compositions preferably contain less than 20% by weight, in particular less than 10% by weight, of organic solvents and / or water. They are preferably solvent-free and anhydrous (so-called 100% systems). In this case, it is preferable to dispense with a drying step.
  • the radiation-curable compositions may contain other constituents in addition to the radiation-curable compounds as a binder.
  • constituents for example, Pigments, leveling agents, dyes, stabilizers etc.
  • photoinitiators are generally used.
  • Photoinitiators known to the person skilled in the art as photoinitiators can be used, for example those in " Advances in Polymer Science”, Volume 14, Springer Berlin 1974 or in KK Dietliker, Chemistry and Technology of UV and EB Formulation for Coatings, Inks and Paints, Volume 3; Photoinitiators for Free Radical and Cationic Polymerization, PKT Oldring (Eds), SITA Technology Ltd, London on, mentioned.
  • Suitable examples are phosphine oxides, benzophenones, ⁇ -hydroxy-alkyl-aryl ketones, thioxanthones, anthraquinones, acetophenones, benzoins and benzoin ethers, ketals, imidazoles or phenylglyoxylic acids.
  • Phosphine oxides are, for example, mono- or bisacylphosphine oxides, such as, for example, Irgacure® 819 (bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide), as described, for example, in US Pat EP-A 7 508 . EP-A 57 474 . DE-A 19618 720 .
  • Irgacure® 819 bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide
  • EP-A 495 751 or EP-A 615 980 are described, for example, 2,4,6-trimethylbenzoyldiphenylphosphine oxide (Lucirin ® TPO), ethyl 2,4,6-trimethylbenzoylphenylphosphinate, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentyl,
  • Benzophenones are, for example, benzophenone, 4-aminobenzophenone, 4,4'-bis (dimethylamino) benzophenone, 4-phenylbenzophenone, 4-chlorobenzophenone, Michler's ketone, o-methoxybenzophenone, 2,4,6-trimethylbenzophenone, 4-methylbenzophenone, 2,4 Dimethylbenzophenone, 4-isopropylbenzophenone, 2-chlorobenzophenone, 2,2'-dichlorobenzophenone, 4-methoxybenzophenone, 4-propoxybenzophenone or 4-butoxybenzophenone
  • ⁇ -hydroxyalkyl-aryl ketones are 1-benzoylcyclohexan-1-ol (1-hydroxycyclohexyl-phenylketone), 2-hydroxy-2,2-dimethylacetophenone (2-hydroxy-2-methyl-1-phenyl) propan-1-one), 1-hydroxyacetophenone, 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1-propan-1-one, polymer containing 2-hydroxy-2- contains methyl-1- (4-isopropen-2-yl-phenyl) -propan-1-one in copolymerized form (Esacure® KIP 150)
  • Xanthones and thioxanthones are, for example, 10-thioxanthenone, thioxanthen-9-one, xanthen-9-one, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, 2,4-dichlorothioxanthone, chloroxanthenone,
  • Anthraquinones are, for example, ⁇ -methylanthraquinone, tert- butylanthraquinone, anthraquinonecarbonyl acid ester, benz [de] anthracen-7-one, benz [a] anthracene-7,12-dione, 2-methylanthraquinone, 2-ethylanthraquinone, 2- tert- butylanthraquinone, 1 Chloroanthraquinone, 2-Amylanthraquinone
  • Acetophenones are, for example, acetophenone, acetonaphthoquinone, valerophenone, hexanophenone, ⁇ -phenylbutyrophenone, p-morpholinopropiophenone, dibenzosuberone, 4-morpholinobenzophenone, p-diacetylbenzene, 4'-methoxyacetophenone, ⁇ -tetralone, 9-acetylphenanthrene, 2-acetylphenanthrene, 3-acetylphenanthrene, 3-acetyllndole, 9-fluorenone, 1-indanone, 1,3,4-triacetylbenzene, 1-acetonaphthone, 2-acetonaphthone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, 1, 1-dichloroacetophenone, 1-hydroxyacetophenone, 2,2-diethoxyaceto
  • Benzoins and benzoin ethers are, for example, 4-morpholinodeoxybenzoin, benzoin, benzoin isobutyl ether, benzoin tetrahydropyranyl ether, benzoin methyl ether, benzoin ethyl ether, benzoin butyl ether, benzoin isopropyl ether, 7-H-benzoin methyl ether,
  • Ketals are, for example, acetophenone dimethyl ketal, 2,2-diethoxyacetophenone, benzil ketals, such as benzil dimethyl ketal,
  • DE-A 199 13 353 or WO 98/33761 described or other photoinitiators, such as benzaldehyde, methyl ethyl ketone, 1-naphthaldehyde, triphenylphosphine, tri-o-tolylphosphine, 2,3-butanedione or mixtures thereof, such as 2-hydroxy-2-methyl-1-phenylpropan-2-one and 1-hydroxycyclohexyl phenyl ketone, Bls (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide and 2-hydroxy-2-methyl -1-phenyl-propan-1-one Benzophenone and 1-hydroxycyclohexyl phenyl ketone, Bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide and 1-hydroxycycl
  • the radiation-curable compositions contain less than 10 parts by weight, in particular less than 4 parts by weight, more preferably less than 1.5 parts by weight of photoinitiator per 100 parts by weight of radiation-curable compounds.
  • the radiation-curable composition can be applied by conventional methods to the substrate to be coated or brought into the appropriate form.
  • the radiation curing can then take place as soon as the substrate is surrounded by the protective gas.
  • the inventive method is suitable for the production of coatings on substrates and for the production of moldings.
  • Suitable substrates are, for example, wood, paper, textile, leather, fleece, plastic surfaces, glass, ceramics, mineral building materials, such as cement blocks and fiber cement boards, or metals or coated metals, preferably plastics or metals, which may for example also be present as films.
  • Plastics are, for example, thermoplastic polymers, in particular polymethyl methacrylates, polybutyl methacrylates, polyethylene terephthalates, polybutylene terephthalates, polyvinylidene fluorides, polyvinyl chlorides, polyesters, polyolefins, acrylonitrile ethylene propylene-diene copolymers (A-EPDM), polyetherimides, polyether ketones, polyphenylene sulfides, polyphenylene ethers or mixtures thereof.
  • thermoplastic polymers in particular polymethyl methacrylates, polybutyl methacrylates, polyethylene terephthalates, polybutylene terephthalates, polyvinylidene fluorides, polyvinyl chlorides, polyesters, polyolefins, acrylonitrile ethylene propylene-diene copolymers (A-EPDM), polyetherimides, polyether ketones, polyphenylene sulfides, polyphenylene ethers or mixtures thereof.
  • polyethylene polypropylene, polystyrene, polybutadiene, polyesters, polyamides, polyethers, polycarbonate, polyvinyl acetal, polyacrylonitrile, polyacetal, polyvinyl alcohol, polyvinyl acetate, phenolic resins, urea resins, melamine resins, alkyd resins, epoxy resins or polyurethanes, their block or graft copolymers and blends thereof.
  • Preferred plastics include ABS, AES, AMMA, ASA, EP, EPS, EVA, E-VAL, HDPE, LDPE, MABS, MBS, MF, PA, PA6, PA66, PAN, PB, PBT, PBTP, PC, PE , PEC, PEEK, PEI, PEK, PEP, PES, PET, PETP, PF, PI, PIB, PMMA, POM, PP, PPS, PS, PSU, PUR, PVAC, PVAL, PVC, PVDC, PVP, SAN, SB, SMS, UF, UP plastics (abbreviated to DIN 7728) and aliphatic polyketones.
  • plastics as substrates are polyolefins, e.g. PP (polypropylene) which may optionally be isotactic, syndiotactic or atactic and optionally non-oriented or oriented by uni- or bis-axial stretching, SAN (styrene-acrylonitrile copolymers), PC (polycarbonates), PMMA (polymethyl methacrylates), PBT (poly (Butylene terephthalate) e), PA (polyamides), ASA (acrylonitrile-Styroi-acrylic ester copolymers) and ABS (acrylonitrile-butadiene-styrene copolymers), as well as their physical mixtures (blends).
  • Particularly preferred are PP, SAN, ABS, ASA and blends of ABS or ASA with PA or PBT or PC.

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Abstract

The invention relates to an apparatus and a method of producing molding materials and coatings on substrates by curing radiation-curable materials under an inert gas atmosphere by exposure to high-energy radiation.

Description

Die Erfindung betrifft eine Vorrichtung und ein Verfahren zur Herstellung von Formmassen und Beschichtungen auf Substraten durch Härtung von strahlungshärtbaren Massen unter Inertgasatmosphäre durch Bestrahlen mit energiereicher Strahlung.The invention relates to a device and a method for producing molding compositions and coatings on substrates by curing radiation-curable compositions under an inert gas atmosphere by irradiation with high-energy radiation.

Bei der Strahlungshärtung von radikalisch polymerisierbaren Verbindungen, z.B. von (Meth)acrylatverbindungen oder Vinyletherverbindungen, kann eine starke Inhibierung der Polymerisation bzw. Härtung durch Sauerstoff auftreten. Diese Inhibierung führt zu einer unvollständigen Härtung an der Oberfläche und so z.B. zu klebrigen Beschichtungen.In the radiation curing of radically polymerizable compounds, e.g. Of (meth) acrylate compounds or vinyl ether compounds, a strong inhibition of polymerization or curing by oxygen may occur. This inhibition results in incomplete surface hardening, e.g. to sticky coatings.

Dieser Sauerstoffinhibierungseffekt kann durch den Einsatz hoher Fotoinitiatormengen, durch Mitverwendung von Coinitiatoren, z. B. Aminen, energiereicher UV-Strahlung hoher Dosis, z.B. mit Quecksilberhochdrucklampen oder durch Zusatz von barrierebildenden Wachsen vermindert werden.This oxygen inhibition effect can be achieved by the use of high amounts of photoinitiator, by co-using coinitiators, for. Amines, high energy, high dose UV radiation, e.g. be reduced with high pressure mercury lamps or by the addition of barrier-forming waxes.

Bekannt ist auch die Durchführung der Strahlungshärtung unter einem inerten Schutzgas, z.B. aus EP-A-540884 , aus Joachim Jung, RadTech Europe 99, Berlin 08. bis 10.11.1999 in Berlin (UV-Applications in Europe Yesterday-Today Tomorrow).It is also known to carry out the radiation curing under an inert protective gas, for example EP-A-540 884 , from Joachim Jung, RadTech Europe 99, Berlin 08. to 10.11.1999 in Berlin (UV-Applications in Europe Yesterday-Today Tomorrow).

Strahlungshärtbare Massen können sowohl flüchtige Verdünnungsmittel, wie beispielsweise Wasser oder organische Lösungsmittel enthalten als auch in Abwesenheit solcher Verdünnungsmittel verarbeitet werden. Das Verfahren der Strahlungshärtung eignet sich für Lackierungen, welche in industriellen Anwendungen oder auch in mittleren oder kleinen Handwerksbetrieben oder im häuslichen Bereich durchgeführt werden. Bisher hat aber die aufwendige Durchführung des Verfahrens und die dazu benötigten Vorrichtungen, insbesondere die UV-Lampen, eine Anwendung der Strahlungshärtung in den nicht industriellen Bereichen verhindert.Radiation curable compositions may include both volatile diluents, such as water or organic solvents, and processed in the absence of such diluents. The process of radiation curing is suitable for coatings, which are carried out in industrial applications or in medium or small crafts or in the domestic sector. So far, however, the complex implementation of the method and the devices required for this purpose, in particular the UV lamps, an application of radiation curing in the non-industrial areas prevented.

WO 01/39897 beschreibt ein Verfahren zur Strahlungshärtung unter einer Inertgasatmosphäre, die schwerer als Luft ist, bevorzugt Kohlendioxid. Eine dort beschriebene bevorzugte Ausführungsform zur Aushärtung findet in einem Tauchbecken statt. WO 01/39897 describes a method for radiation curing under an inert gas atmosphere that is heavier than air, preferably carbon dioxide. A preferred embodiment for curing described therein takes place in a dip tank.

Ein Verbesserungsbedarf an dem dort offenbarten Verfahren besteht, indem Schutzgasverluste und die Kontamination durch Luftsauerstoff weiter verringert werden, die beispielsweise beim Erwärmen der Schutzgasatmosphäre auftreten, z.B. verursacht durch die Abwärme. Gewünscht ist eine größere Unabhängigkeit von Wärmequellen im Bestrahlungsraum und damit auch mehr Freiheit mit der Auswahl an Art, Positionierung und Anzahl an Bestrahlungsmöglichkeiten zu erreichen.There is a need to improve the method disclosed therein by further reducing protective gas losses and the contamination by atmospheric oxygen, which occur, for example, when the protective gas atmosphere is heated, for example because of the waste heat. Desired is a greater independence of heat sources in the irradiation room and thus to achieve more freedom with the choice of type, positioning and number of irradiation options.

In RadTech Conference Proceedings, November 3 - 5, 2003, Berlin, Germany, Dr. E-rich Beck, BASF AG, Germany; "UV-Curing under Carbon Dioxide", S. 855 - 863; Volume II, ISBN 3-87870-152-7 , werden Verfahren und eine Vorrichtung zur Strahlungshärtung unter CO2 vorgestellt, die ein kontinuierliches Verfahren zur Härtung unter Inertgas zuläßt. Nachteilig daran ist, daß der Verbrauch an Inertgas noch relativ hoch ist.In RadTech Conference Proceedings, November 3 - 5, 2003, Berlin, Germany, Dr. Ing. E-rich Beck, BASF AG, Germany; "UV Curing under Carbon Dioxide", p. 855-863; Volume II, ISBN 3-87870-152-7 , A method and a device for radiation curing under CO 2 are presented, which allows a continuous process for curing under inert gas. The disadvantage of this is that the consumption of inert gas is still relatively high.

Aufgabe der Erfindung war es, eine Vorrichtung zur Verfügung zu stellen, mit der eine Strahlungshärtung durchgeführt werden kann und man den Verbrauch an Inertgas möglichst gering halten kann.The object of the invention was to provide a device with which a radiation curing can be performed and you can keep the consumption of inert gas as low as possible.

Die Aufgabe wurde gelöst durch eine Vorrichtung 1 zum Durchführen einer Härtung von Beschichtungen auf einem Substrat S unter einer Inertgasatmosphäre, enthaltend

  • seitliche Abdeckungen 2, 3, 4 und 5,
  • obere und untere Abdeckungen 6 und 7, wobei 2, 3, 4, 5, 6 und 7 gemeinsam einen Innenraum umschließen,
  • eine oder mehrere Trennwände 8, die den Innenraum unterteilen, wobei die Trennwände 8 mit der unteren Abdeckung 7 abschließen und einen Abstand d1 zur oberen Abdeckung 6 freilassen,
  • eine oder mehrere Trennwände 9, die den Innenraum unterteilen, wobei die Trennwände 9 mit der oberen Abdeckung 6 abschließen und einen Abstand d2 zur unteren Abdeckung 7 freilassen,
  • wobei 8 und 9 mit der jeweils benachbarten Trennwand 9 oder 8 und gegebenenfalls den seitlichen Abdeckungen 2 oder 3 einen unterteilten Innenraum (Kompartiment) bilden,
  • mindestens eine innerhalb des Innenraums und/oder in den Innenraum hinein strahlende Strahlungsquelle 10,
  • mindestens eine Gaszuführungsvorrichtung 11, mit der ein Gas oder Gasgemisch in den Innenraum geführt oder dort gebildet werden kann,
  • mindestens eine Fördervorrichtung 12 für das Substrat S,
  • Einlaß 13 und
  • Auslaß 14,
  • Wobei
  • die Trennwände 8 im wesentlichen senkrecht auf die untere Abdeckung 7 stehen,
  • die Trennwände 9 im wesentlichen senkrecht auf die obere Abdeckung 6 stehen,
  • die Abstände d1 und d2 sowie die Breite b der Vorrichtung 1 so gewählt sind, daß sie größer sind als die Dimensionen des Substrats S entlang der Förderrichtung der Fördervorrichtung 12 und
  • durch die Vorrichtungen 2, 3, 8 und 9 mindestens 4 Kompartimente ausgebildet werden.
The object has been achieved by a device 1 for carrying out a curing of coatings on a substrate S under an inert gas atmosphere containing
  • side covers 2, 3, 4 and 5,
  • upper and lower covers 6 and 7, wherein 2, 3, 4, 5, 6 and 7 together enclose an inner space,
  • one or more partitions 8 that divide the interior, the partitions 8 being flush with the bottom cover 7 and leaving a distance d1 from the top cover 6 ,
  • one or more partition walls 9 dividing the interior space, the partition walls 9 being flush with the top cover 6 and leaving a distance d2 from the bottom cover 7 ,
  • wherein 8 and 9 with the respectively adjacent partition wall 9 or 8 and optionally the side covers 2 or 3 form a divided interior space (compartment),
  • at least one radiation source 10 radiating within the interior space and / or into the interior space ,
  • at least one gas supply device 11, with which a gas or gas mixture can be guided into the interior or formed there,
  • at least one conveying device 12 for the substrate S,
  • Inlet 13 and
  • Outlet 14,
  • In which
  • the partitions 8 are substantially perpendicular to the lower cover 7 ,
  • the partitions 9 are substantially perpendicular to the top cover 6 ,
  • the distances d1 and d2 and the width b of the device 1 are chosen so that they are greater than the dimensions of the substrate S along the conveying direction of the conveying device 12 and
  • by the devices 2, 3, 8 and 9 at least 4 compartments are formed.

In der erfindungsgemäßen Vorrichtung können sowohl Schutzgase verwendet werden, welche schwerer sind als Luft als auch solche, die leichter sind als Luft.Shielding gases which are heavier than air and those which are lighter than air can be used in the device according to the invention.

Das Molgewicht eines Inertgases, das schwerer ist als Luft ist daher größer als 28,8 g/mol (entspricht dem Molgewicht eines Gasgemisches von 20 % Sauerstoff O2 und 80 % Stickstoff N2), vorzugsweise größer 30 g/mol, besonders bevorzugt mindestens 32 g/mol, insbesondere größer 35 g/mol. In Betracht kommen z.B. Edelgase wie Argon, Kohlenwasserstoffe und halogenierte Kohlenwasserstoffe. Besonders bevorzugt ist Kohlendioxid.The molecular weight of an inert gas which is heavier than air is therefore greater than 28.8 g / mol (corresponds to the molecular weight of a gas mixture of 20% oxygen O 2 and 80% nitrogen N 2 ), preferably greater than 30 g / mol, more preferably at least 32 g / mol, in particular greater than 35 g / mol. Suitable examples include noble gases such as argon, hydrocarbons and halogenated hydrocarbons. Particularly preferred is carbon dioxide.

Die Versorgung mit Kohlendioxid kann aus Druckbehältern, gefilterten Verbrennungsgasen, z.B. von Erdgas oder Kohlenwasserstoffen, oder bevorzugt als Trockeneis erfolgen. Als vorteilhaft, insbesondere für Anwendungen im nicht industriellen oder im kleinindustriellen Bereich wird die Versorgung mit Trockeneis gesehen, da festes Trockeneis als Feststoff in einfachen, mit Schaumstoffen isolierten Behältern transportiert und gelagert werden kann. Das Trockeneis kann als solches verwendet werden, bei den üblichen Verwendungstemperaturen liegt es dann gasförmig vor. Ein weiterer Vorteil in der Verwendung von Trockeneis ist die Kühlwirkung, die zur Kondensation und Entfernung von flüchtigen Lackkomponenten, wie Lösemitteln oder Wasser genutzt werden kann (siehe unten).The supply of carbon dioxide may be from pressure vessels, filtered combustion gases, e.g. of natural gas or hydrocarbons, or preferably as dry ice. The supply of dry ice is considered advantageous, in particular for applications in the non-industrial or in the small industrial sector, since solid dry ice can be transported and stored as a solid in simple containers insulated with foams. The dry ice can be used as such, it is then in gaseous form at the usual temperatures of use. Another advantage of using dry ice is the cooling effect that can be used to condense and remove volatile paint components, such as solvents or water (see below).

Schutzgase die leichter sind als Luft, sind solche mit einem Molgewicht von weniger als 28,8 g/mol, bevorzugt von nicht mehr als 28,5 g/mol, besonders bevorzugt von nicht mehr als 28,1 g/mol. Beispiele dafür sind molekularer Stickstoff, Helium, Neon, Kohlenstoffmonoxid, Wasserdampf, Methan oder Stickstoff-Luft-Gemische (sog. Magerluft), besonders bevorzugt sind Stickstoff, Wasserdampf und Stickstoff-Luft-Gemische, ganz besonders bevorzugt sind Stickstoff und Stickstoff-Luft-Gemische, insbesondere Stickstoff.Shielding gases which are lighter than air are those having a molecular weight of less than 28.8 g / mol, preferably not more than 28.5 g / mol, more preferably not more than 28.1 g / mol. Examples include molecular nitrogen, helium, neon, carbon monoxide, water vapor, methane or nitrogen-air mixtures (so-called lean air), particularly preferably nitrogen, water vapor and nitrogen-air mixtures, very particularly preferably nitrogen and nitrogen-air mixtures. Mixtures, in particular nitrogen.

Die Versorgung mit Schutzgasen, die leichter sind als Luft kann bevorzugt aus Druckbehältern erfolgen oder aus sauerstoffabgereicherten Abgasen, beispielsweise aus Oxidationen oder Kokereiabgasen oder durch Abtrennung von Sauerstoff aus Gasgemischen, wie z.B. Luft oder Verbrennungsgasen, über Membranen.The supply of inert gases, which are lighter than air, can preferably be carried out from pressure vessels or from oxygen-depleted exhaust gases, for example, from oxidations or coke oven exhaust gases or by separation of oxygen from gas mixtures, such. Air or combustion gases, over membranes.

Die Begriffe "Schutzgas" und "Inertgas" werden in dieser Schrift synonym verwendet und bezeichnen solche Verbindungen, die unter Bestrahlung mit energiereicher Strahlung nicht wesentlich mit den Beschichtungsmassen reagieren und deren Aushärtung bzgl. Geschwindigkeit und/oder Qualität nicht negativ beeinflussen. Insbesondere wird darunter ein niedriger Sauerstoffgehalt verstanden (siehe unten). Darin bedeutet "nicht wesentlich reagieren", daß die Inertgase unter der im Prozeß ausgeübten Bestrahlung mit energiereicher Strahlung zu weniger als 5 mol% pro Stunde, bevorzugt zu weniger als 2 mol% pro Stunde und besonders bevorzugt zu weniger als 1 mol% pro Stunde mit den Beschichtungsmassen oder mit anderen innerhalb der Vorrichtung vorhandenen Stoffen reagieren.The terms "protective gas" and "inert gas" are used interchangeably in this document and designate those compounds which, when irradiated with high-energy radiation, do not react significantly with the coating compositions and do not adversely affect their curing with respect to speed and / or quality. In particular, this is understood to mean a low oxygen content (see below). In it "does not mean Substantially react "that the inert gases under the applied in the process irradiation with high-energy radiation to less than 5 mol% per hour, preferably less than 2 mol% per hour and more preferably less than 1 mol% per hour with the coating materials or react with other substances present within the device.

Das Schutzgas(-gemisch) wird in die Vorrichtung eingefüllt und die Luft daraus verdrängt.The protective gas (mixture) is filled into the device and the air displaced from it.

Die Vorrichtung enthält nun eine Schutzgasatmosphäre in die das Substrat, welches mit der strahlungshärtbaren Masse beschichtet ist, oder der Formkörper geführt werden kann. Anschließend kann die Strahlungshärtung erfolgen.The device now contains a protective gas atmosphere into which the substrate, which is coated with the radiation-curable composition, or the shaped body can be guided. Subsequently, the radiation hardening can take place.

Während der Strahlungshärtung sollte mittlere der Sauerstoffgehalt (O2) in der Schutzgasatmosphäre weniger als 15 Vol% betragen, bevorzugt weniger als 10 Vol%, besonders bevorzugt weniger als 8 Vol%, ganz besonders bevorzugt weniger als 6 Vol% und insbesondere weniger als 3 Vol %, jeweils bezogen auf die gesamte Gasmenge in der Schutzgasatmosphäre; mit dem erfindungsgemäßen Verfahren können leicht mittlere Sauerstoffgehalte unter 2,5 Vol%, bevorzugt unter 2,0 Vol% und besonders bevorzugt auch unter 1,5 Vol% eingestellt werden. Dabei ist die besondere Schwierigkeit zu berücksichtigen, daß dreidimensionale Substrate Sauerstoff in die erfindungsgemäße Vorrichtung einschleppen (sog. Einschöpfen) und der Sauerstoffgehalt daher wesentlich schwieriger zu verringern ist als bei zweidimensionalen Objektenm wie beispielsweise Folien, Bahnen oder dergleichen. Bei der Führung von zweidimensionalen Substraten durch die erfindungsgemäße Vorrichtung sind auch geringere Sauerstoffgehalte als bei dreidimensionalen zu erreichen, beispielsweise bis zu weniger als 1 Vol %, bevorzugt weniger als 0,5 Vol%, besonders bevorzugt weniger als 0,1 Vol%, ganz besonders bevorzugt weniger als 0,05 Vol% und Insbesondere weniger als 0,01 Vol%.During radiation curing, the average oxygen content (O 2 ) in the inert gas atmosphere should be less than 15% by volume, preferably less than 10% by volume, more preferably less than 8% by volume, most preferably less than 6% by volume and especially less than 3% by volume %, in each case based on the total amount of gas in the protective gas atmosphere; With the method according to the invention, it is easy to set average oxygen contents below 2.5% by volume, preferably below 2.0% by volume and more preferably below 1.5% by volume. The particular difficulty to be considered is that three-dimensional substrates entrain oxygen into the device according to the invention (so-called scooping) and the oxygen content is therefore much more difficult to reduce than with two-dimensional objects such as films, webs or the like. In the guidance of two-dimensional substrates by the device according to the invention also lower oxygen contents than in three-dimensional to achieve, for example up to less than 1% by volume, preferably less than 0.5% by volume, more preferably less than 0.1% by volume, especially preferably less than 0.05% by volume and in particular less than 0.01% by volume.

Unter Schutzgasatmosphäre wird dabei das Gasvolumen während der Bestrahlung mit energiereicher Strahlung verstanden, welches das Substrat in einem Abstand von bis zu 10 cm von seiner Oberfläche umgibt.A protective gas atmosphere is understood to mean the gas volume during the irradiation with high-energy radiation, which surrounds the substrate at a distance of up to 10 cm from its surface.

Ein weiterer Vorteil der Härtung in einer Schutzgasatmosphäre ist, daß die Abstände zwischen Lampen und strahlungshärtbarer Masse gegenüber der Härtung an Luft vergrößerbar sind. Insgesamt können geringere Strahlungsdosen eingesetzt werden und eine Strahlereinheit kann zur Aushärtung größerer Flächen verwendet werden.Another advantage of curing in a protective gas atmosphere is that the distances between the lamps and the radiation-curable composition can be increased in relation to the curing in air. Overall, lower radiation doses can be used and a radiator unit can be used to cure larger areas.

Im Falle der Verwendung von Trockeneis als Schutzgas kann z.B. eine Beschickung der Vorrichtung, die unter Umständen gleichzeitig Lagerbehälter für Trockeneis sind, einfach erfolgen. Die Überwachung des Kohlendioxidverbrauchs ist unmittelbar am Verbrauch des Trockeneisfeststoffes zu bestimmen. Trockeneis sublimiert bei -78,5°C direkt zu gasförmigem Kohlendioxid. In einem Becken wird dadurch verwirbelungsarm Luftsauerstoff nach oben aus dem Becken verdrängt.In the case of the use of dry ice as a protective gas, for example, a feed of the device, which may be storage containers for dry ice at the same time, easily done. The monitoring of carbon dioxide consumption is directly determined by the consumption of dry ice solids. Dry ice sublimates at -78.5 ° C directly to gaseous carbon dioxide. As a result, atmospheric oxygen is displaced upwards out of the basin in a basin without swirling.

Der Restsauerstoff kann mit handelsüblichen Luftsauerstoffmeßgeräten bestimmt werden. Wegen der sauerstoffreduzierten Atmosphäre in der erfindungsgemäßen Vorrichtung und der damit verbundenen Erstickungsgefahr sollten geeignete Sicherheitsmaßnahmen getroffen werden. Ebenso sollte in angrenzenden Arbeitsbereichen eine ausreichende Belüftung und Inertgasabfluß sichergestellt werden.The residual oxygen can be determined with commercially available atmospheric oxygen meters. Because of the oxygen-reduced atmosphere in the device according to the invention and the risk of suffocation associated with it, suitable safety measures should be taken. Similarly, adequate ventilation and inert gas drainage should be ensured in adjacent work areas.

Die erfindungsgemäße Vorrichtung 1 zum Durchführen einer Härtung von Beschichtungen auf einem Substrat S unter einer Inertgasatmosphäre, enthält

  • seitliche Abdeckungen 2, 3, 4 und 5,
  • obere und untere Abdeckungen 6 und 7, wobei 2, 3, 4, 5, 6 und 7 gemeinsam einen Innenraum umschließen,
  • eine oder mehrere Trennwände 8, die den Innenraum unterteilen, wobei die Trennwände 8 mit der unteren Abdeckung 7 abschließen und einen Abstand d1 zur oberen Abdeckung 6 freilassen,
  • eine oder mehrere Trennwände 9, die den Innenraum unterteilen, wobei die Trennwände 9 mit der oberen Abdeckung 6 abschließen und einen Abstand d2 zur unteren Abdeckung 7 freilassen,
  • wobei 8 und 9 mit der jeweils benachbarten Trennwand 9 oder 8 und gegebenenfalls den seitlichen Abdeckungen 2 oder 3 einen unterteilten Innenraum (Kompartiment) bilden,
  • mindestens eine innerhalb des Innenraums und/oder in den Innenraum hinein strahlende Strahlungsquelle 10,
  • mindestens eine Gaszuführungsvorrichtung 11, mit der ein Gas oder Gasgemisch in den Innenraum geführt oder dort gebildet werden kann,
  • mindestens eine Fördervorrichtung 12 für das Substrat S,
  • Einlaß 13 und
  • Auslaß 14,
wobei
  • die Trennwände 8 im wesentlichen senkrecht auf die untere Abdeckung 7 stehen,
  • die Trennwände 9 im wesentlichen senkrecht auf die obere Abdeckung 6 stehen,
  • die Abstände d1 und d2 sowie die Breite b der Vorrichtung 1 so gewählt sind, daß sie größer sind als die Dimensionen des Substrats S entlang der Förderrichtung der Fördervorrichtung 12 und
  • durch die Vorrichtungen 2, 3, 8 und 9 mindestens 4 Kompartimente ausgebildet werden.
The device 1 according to the invention for carrying out a curing of coatings on a substrate S under an inert gas atmosphere contains
  • side covers 2, 3, 4 and 5,
  • upper and lower covers 6 and 7 , wherein 2, 3, 4, 5, 6 and 7 together enclose an inner space,
  • one or more partitions 8 that divide the interior, the partitions 8 being flush with the bottom cover 7 and leaving a distance d1 from the top cover 6 ,
  • one or more partition walls 9 dividing the interior space, the partition walls 9 being flush with the top cover 6 and leaving a distance d2 from the bottom cover 7 ,
  • wherein 8 and 9 with the respectively adjacent partition wall 9 or 8 and optionally the side covers 2 or 3 form a divided interior space (compartment),
  • at least one radiation source 10 radiating within the interior space and / or into the interior space ,
  • at least one gas supply device 11, with which a gas or gas mixture can be guided into the interior or formed there,
  • at least one conveying device 12 for the substrate S,
  • Inlet 13 and
  • Outlet 14,
in which
  • the partitions 8 are substantially perpendicular to the lower cover 7 ,
  • the partitions 9 are substantially perpendicular to the top cover 6 ,
  • the distances d1 and d2 and the width b of the device 1 are chosen so that they are greater than the dimensions of the substrate S along the conveying direction of the conveying device 12 and
  • by the devices 2, 3, 8 and 9 at least 4 compartments are formed.

Ein Beispiel für eine solche Vorrichtung ist in den Figuren 1 bis 4 dargestellt.An example of such a device is in the FIGS. 1 to 4 shown.

Die Außenwände der erfindungsgemäßen Vorrichtung, nämlich vordere 2 und hintere 3 Abdeckungen, obere 6 und untere 7 Abdeckungen sowie seitliche Abdeckungen 4 und 5, umschließen gemeinsam den Innenraum der Vorrichtung 1. The outer walls of the device according to the invention, namely front 2 and rear 3 covers, upper 6 and lower 7 covers and side covers 4 and 5, together enclose the interior of the device first

Die Trennwände 8 und 9 der erfindungsgemäßen Vorrichtung umschließen jeweils gemeinsam mit benachbarten Trennwänden 9 und 8 bzw. mit der vorderen oder hinteren Abdeckung 2 oder 3 sowie mit den seitlichen Abdeckungen 4 und 5 und den oberen und unteren Abdeckungen 6 und 7 Kompartimente, die den gesamten Innenraum der Vorrichtung unterteilen. Ein Kompartiment wird dabei gebildet von den dieses umschließenden Wänden, die falls erforderlich über freie Räume verlängert gedacht werden um eventuelle Lücken zu schließen, beispielsweise im Falle der Trennwände 8, die zur gedanklichen Konstruktion eines Kompartiments bis zur oberen Abdeckung 6 verlängert gedacht werden.The partition walls 8 and 9 of the device according to the invention enclose in each case together with adjacent partition walls 9 and 8 respectively with the front or rear cover 2 or 3 and with the side panels 4 and 5 and the upper and lower covers 6 and 7 compartments throughout the Divide interior of the device. A compartment is formed by enclosing this walls, which are thought to be extended over free spaces, if necessary, to close any gaps, for example, in the case of partitions 8, which are thought to be extended to the conceptual design of a compartment to the top cover 6 .

Die Zahl der Kompartimente der erfindungsgemäßen Vorrichtung beträgt mindestens 4, bevorzugt mindestens 5 und besonders bevorzugt mindestens 6. Die Anzahl der Kompartimente ist prinzipell nicht begrenzt, bevorzugt beträgt sie bis zu 15, besonders bevorzugt bis zu 12, ganz besonders bevorzugt bis zu 10 und insbesondere bis zu 8.The number of compartments of the device according to the invention is at least 4, preferably at least 5 and more preferably at least 6. The number of compartments is not limited in principle, it is preferably up to 15, more preferably up to 12, most preferably up to 10 and in particular up to 8.

Die Trennwände 8 und 9 stehen im wesentlichen senkrecht auf die untere 7 und obere 6 Abdeckung. Darin bedeutet im wesentlichen, daß der Winkel α1, den 8 und 7 bzw. α2, den 9 und 6 einschließen, um nicht mehr als 30° von der Senkrechten abweicht, bevorzugt nicht mehr als 20°, besonders bevorzugt nicht mehr als 15°, ganz besonders nicht mehr als 10°, insbesondere nicht mehr als 5° und speziell überhaupt nicht, wobei beim Bau der erfindungsgemäßen Vorrichtung allgemein die üblichen konstruktiven Fehlergrenzen zu berücksichtigen sind.The partitions 8 and 9 are substantially perpendicular to the lower 7 and upper 6 cover. Therein, means essentially that the angle α1, the 8 and 7, and α 2, 9 and 6 include, by no more than 30 ° from vertical, preferably no more than 20 ° more preferably not more than 15 ° , in particular not more than 10 °, in particular not more than 5 ° and especially not at all, wherein in the construction of the device according to the invention in general the usual structural error limits are taken into account.

Vorteil einer solchen Senkrechtförderung ist, daß die erfindungsgemäße Vorrichtung platzsparend ist und eine geringstmögliche Stellfläche einnimmt. Zudem erlaubt die Vorrichtung gleichzeitig eine einfache Abschirmung gegen UV-Strahlung nach außen, so dass Strahlungsquellen ohne Filter, z.B. gegen UV-C-Strahlung, für eine effiziente Strahlungsausnutzung eingesetzt werden können.Advantage of such a vertical promotion is that the device according to the invention saves space and occupies the least possible footprint. In addition, the device allows at the same time a simple shielding against UV radiation to the outside, so that radiation sources without filters, e.g. against UV-C radiation, can be used for efficient radiation utilization.

Die Trennwände 8 und 9 stehen bis auf die beschriebene Abweichung aus der Senkrechten parallel zu den vorderen 2 und hinteren 3 Abdeckungen, die ihrerseits ebenfalls aus der Senkrechten abweichen können.The partitions 8 and 9 are up to the described deviation from the vertical parallel to the front 2 and rear 3 covers, which in turn can also deviate from the vertical.

Sämtliche Bauteile der erfindungsgemäßen Vorrichtung sind soweit miteinander verbunden, daß möglichst wenig Inertgas, außer aus dem Eingang 12 oder dem Ausgang 13, aus dem Innenraum entweicht, d.h. eventuelle Ritze, Spalten, Schlitze oder Löcher werden abgedichtet.All components of the device according to the invention are connected to each other so far that as little inert gas escapes, except from the input 12 or the output 13, from the interior, ie any cracks, gaps, slots or holes are sealed.

Dies gilt auch für die Trennwände, die jedoch im Fall von 8 nicht fest mit der unteren Abdeckung 7 bzw. im Fall von 9 mit der oberen Abdeckung 6 verbunden sein müssen, um die Trennwände eventuell verschieben zu können. Hier kann zwischen 8 und 7 bzw. zwischen 9 und 6 ein schmaler Spalt von bevorzugt nicht mehr als 10 mm, besonders bevorzugt nicht mehr als 7 mm, ganz besonders bevorzugt nicht mehr als 5 mm, insbesondere nicht mehr als 3 mm und speziell nicht mehr als 1 mm tolerabel sein.This also applies to the partitions, which, however, in the case of FIG. 8 need not be firmly connected to the lower cover 7 or, in the case of FIG. 9, to the upper cover 6 in order to possibly move the partitions. Here, between 8 and 7 or between 9 and 6, a narrow gap of preferably not more than 10 mm, particularly preferably not more than 7 mm, very particularly preferably not more than 5 mm, in particular not more than 3 mm and especially not more be tolerable as 1 mm.

Dahingegen lassen die Trennwand 8 mit der oberen Abdeckung 6 bzw. die Trennwand 9 mit der unteren Abdeckung 7 genügend Platz, um das Substrat durch diesen Zwischenraum zu fördern. Der Zwischenraum zwischen 8 und 6 läßt den Freiraum d1, der Zwischenraum zwischen 9 und 7 den Zwischenraum d2. Die Zwischenräume d1 und d2 sind so gestaltet, daß sie ausreichend Platz für die Abmessungen des Substrats In der Förderrichtung der Fördereinrichtung 12 lassen.On the other hand, the dividing wall 8 with the upper cover 6 and the dividing wall 9 with the lower cover 7 leave enough space to convey the substrate through this gap. The space between 8 and 6 leaves the space d1, the space between 9 and 7, the gap d2. The gaps d1 and d2 are designed so that they leave enough space for the dimensions of the substrate in the conveying direction of the conveyor 12 .

Selbstverständlich gilt für den gesamten Weg durch die erfindungsgemäße Vorrichtung entlang der Fördereinrichtung 12, daß ausreichend Platz für die Abmessungen des Substrats in der Förderrichtung gelassen wird, ohne daß das Substrat andere Bauteile und/oder Substrate berührt.Of course, for the entire path through the device according to the invention along the conveying device 12, sufficient space is left for the dimensions of the substrate in the conveying direction without the substrate touching other components and / or substrates.

Das Substrat kann prinzipiell in jeder beliebigen Ausrichtung durch die erfindungsgemäße Vorrichtung gefördert werden, bevorzugt wird eine Ausrichtung, in der der Strömungswiderstand und die durch die Bewegung des Substrats verursachte Verwirbelung minimiert wird. Die in dieser Ausrichtung in Förderrichtung projizierte Querschnittsfläche des Substrats wird in dieser Schrift als Fläche des Substrats angenommen. Die in dieser Ausrichtung des Substrats, wie es durch die erfindungsgemäße Vorrichtung gefördert wird, vorliegenden Abmessungen werden in dieser Schrift als die charakteristischen Dimensionen des Substrats verwendet.In principle, the substrate can be conveyed through the device according to the invention in any desired orientation, an orientation in which the flow resistance and the turbulence caused by the movement of the substrate is minimized is preferred. The projected in this orientation in the conveying direction cross-sectional area of the substrate is assumed in this document as the surface of the substrate. The dimensions present in this orientation of the substrate as conveyed by the apparatus of the invention are used herein as the characteristic dimensions of the substrate.

Bevorzugt wird das Substrat so durch die erfindungsgemäße Vorrichtung gefördert, daß dessen projizierte Querschnitsfläche senkrecht zur Förderrichtung kleinstmöglich ist oder zumindest nicht mehr als 25% mehr als dieses Minimum beträgt, bevorzugt nicht mehr als 20%, besonders bevorzugt nicht mehr als 15%, ganz besonders bevorzugt nicht mehr als 10% und insbesondere nicht mehr als 5%.The substrate is preferably conveyed through the device according to the invention such that its projected cross-sectional area perpendicular to the conveying direction is as small as possible or at least not more than 25% more than this minimum, preferably not more than 20%, particularly preferably not more than 15%, especially preferably not more than 10% and in particular not more than 5%.

Die Querschnittsfläche, durch die das Substrat durch die einzelnen Kompartimente in der erfindungsgemäßen Vorrichtung gefördert wird, also die Fläche senkrecht zur Fördereinrichtung 12 sollte in einer bevorzugten erfindungsgemäßen Ausgestaltung mindestens das dreifache der projizierten Querschnittsfläche des Substrats in Förderrichtung betragen, bevorzugt das vierfache.The cross-sectional area through which the substrate is conveyed through the individual compartments in the device according to the invention, ie the surface perpendicular to the conveyor 12 should, in a preferred embodiment according to the invention, be at least three times the projected cross-sectional area of the substrate in the conveying direction, preferably four times.

Die Querschnittsfläche sollte in einer weiteren bevorzugten erfindungsgemäßen Ausgestaltung nicht mehr als das sechsfache der Fläche des Substrats betragen, bevorzugt nicht mehr als das fünffache.In a further preferred embodiment according to the invention, the cross-sectional area should not be more than six times the area of the substrate, preferably not more than five times.

Diese Querschnittsfläche ist beispielsweise die Querschnittsfläche Q1, die die Trennwände 8 mit der oberen Abdeckung 6 freilassen, also im Fall einer quadratischen Öffnung die Fläche d1 · b, oder die Querschnittsfläche Q2, die die Trennwände 9 mit der untren Abdeckung 7 freilassen, also im Fall einer quadratischen Öffnung die Fläche d2 • b, oder die Querschnittsfläche Q3, die zwischen den Trennwänden und gegebenenfalls den Wänden 2 oder 3 gebildet wird, also im Fall einer quadratischen Öffnung die Fläche d3b. This cross-sectional area is, for example, the cross-sectional area Q1 which leaves the partitions 8 with the top cover 6 , ie, in the case of a square opening, the area d1 · b, or the cross-sectional area Q2 which leaves the partitions 9 with the bottom cover 7, in the case a square opening the area d2 • b, or the cross-sectional area Q3 , which is formed between the partitions and optionally the walls 2 or 3 , so in the case of a square opening the area d3b.

Die Höhe h der erfindungsgemäßen Vorrichtung sollte mindestens das Doppelte der Durchmesser d1 oder d2, je nachdem welcher Durchmesser der größere ist, betragen, bevorzugt mindestens das Dreifache.The height h of the device according to the invention should be at least twice the diameter d1 or d2, whichever is the larger, preferably at least three times.

Die Trennwände 8 und 9 sind in einer bevorzugten Ausführungsform so gestaltet, daß sie parallel zu den oberen und unteren Abdeckungen 6 und 7 verschiebbar sind um die erfindungsgemäße Vorrichtung auf unterschiedliche charakteristische Substratdimensionen anzupassen.The partitions 8 and 9 are designed in a preferred embodiment so that they are displaceable parallel to the upper and lower covers 6 and 7 in order to adapt the device according to the invention to different characteristic substrate dimensions.

Derartigen Gestaltungsmöglichkeiten sind dem Fachmann an sich bekannt. Beispielsweise können die Trennwände in Führungsschienen verschoben werden oder in Passungen oder Aufnahmevorrichtungen in den Seiten- und/oder oberen und unteren Abdeckungen fixiert werden.Such design options are known per se to the person skilled in the art. For example, the partitions may be slid in guide rails or fixed in fits or receptacles in the side and / or top and bottom covers.

Die Trennwände 8 und 9 sind in einer weiteren bevorzugten Ausführungsform so gestaltet, daß der Abstand d1 bzw. d2 zu den unteren bzw. oberen Abdeckungen 7 bzw. 6 veränderbar ist um die erfindungsgemäße Vorrichtung auf unterschiedliche charakteristische Substratdimensionen anzupassen.The partitions 8 and 9 are designed in a further preferred embodiment so that the distance d1 or d2 to the lower or upper covers 7 and 6 is variable to adapt the device according to the invention to different characteristic substrate dimensions.

Derartigen Gestaltungsmöglichkeiten sind dem Fachmann an sich bekannt. Beispielsweise können mehrere Trennwände teleskopartig aneinander angeordnet sein, so daß sie durch Ausziehen verlänger- oder verkürzbar sind.Such design options are known per se to the person skilled in the art. For example, a plurality of partitions may be arranged telescopically together, so that they can be extended or shortened by extending.

Die Abstände d1, d2, d3 und b sind bevorzugt so gewählt, daß die Abstände zwischen Substrat und den Wänden möglichst gleich sind, um eine möglichst gleichmäßige Umströmung des Substrats in der Inertatmosphäre zu gewährleisten. Die dadurch gebildete Querschnittsfläche kann rund, oval, ellipsoid, viereckig, trapezförmig, rechteckig, quadratisch oder unregelmäßig geformt sein. Einfachheitshalber wird die Querschnittsfläche bevorzugt viereckig und besonders bevorzugt rechteckig oder quadratisch gewählt.The distances d1, d2, d3 and b are preferably selected so that the distances between the substrate and the walls are as equal as possible in order to ensure the most uniform possible flow around the substrate in the inert atmosphere. The cross-sectional area formed thereby can be round, oval, ellipsoidal, quadrangular, trapezoidal, rectangular, square or irregular in shape. For the sake of simplicity, the cross-sectional area is preferably quadrangular and particularly preferably rectangular or square.

Eingang 13 und Ausgang 14 können einfachheitshalber lediglich als Öffnungen in der vorderen 2 oder hinteren 3, oder gegebenenfalls auch in einer seitlichen 4 oder 5, Abdeckung bestehen. Selbstverständlich können Eingang 13 und Ausgang 14 auch in der oberen 6 oder unteren Abdeckung 7 angebracht sein.For the sake of simplicity, the inlet 13 and the outlet 14 can only be covers as openings in the front 2 or rear 3, or possibly also in a lateral 4 or 5 cover. Of course, input 13 and output 14 may also be mounted in the upper 6 or lower cover 7 .

In einer bevorzugten Ausführungsform werden Eingang 13 und/oder Ausgang 14 verlängert ausgeführt, so daß das Substrat eine Strecke 15 mit der Länge f1 durch den Eingang 13 und/oder eine Strecke 16 mit der Länge f2 durch den Ausgang 14 gefördert wird. Diese Strecken f1 und/oder f2 können beispielsweise das 0- bis 10-fache der Parameter d1 oder d2, je nachdem, welcher dieser beiden Parameter der größere ist, betragen, bevorzugt das 0- bis 5-fache, besonders bevorzugt das 0- bis 2-fache, ganz besonders bevorzugt das 0,5- bis 2-fache und insbesondere das 1- bis 2-fache (Figur 1).In a preferred embodiment, input 13 and / or output 14 are made extended so that the substrate is conveyed a distance 15 of length f1 through the input 13 and / or a distance 16 of length f2 through the output 14 . These distances f1 and / or f2 may, for example, be 0 to 10 times the parameters d1 or d2, depending on which of these two parameters is the larger, preferably 0 to 5 times, particularly preferably 0 to 2-fold, most preferably 0.5 to 2-fold and especially 1 to 2-fold ( FIG. 1 ).

In einer weiteren bevorzugten Ausführungsform werden Eingang 13 und/oder Ausgang 14 so ausgeführt, so daß das Substrat möglichst eng umschlossen wird. Dies kann beispielsweise so erreicht werden, daß die Öffnungen von Eingang und/oder Ausgang möglichst nah an die Dimensionen des Substrats heranreichen und nicht, wie oben gefordert, ein Vielfaches des Substratquerschnittes bilden. Sind Ein- und/oder Ausgang verlängert ausgeführt, so kann sich die Querschnittsfläche der verlängerten Ausführung in Richtung Eingang bzw. Ausgang verjüngen.In a further preferred embodiment, the input 13 and / or output 14 are designed so that the substrate is enclosed as closely as possible. This can be achieved, for example, so that the openings of input and / or output come as close as possible to the dimensions of the substrate and not, as required above, form a multiple of the substrate cross-section. If the input and / or output are extended, the cross-sectional area of the extended version can taper towards the input or output.

In einer weiteren bevorzugten Ausführungsform werden Eingang 13 und/oder Ausgang 14 mit Vorrichtungen versehen, die ein Ausfließen des in der Vorrichtung enthaltenen Inertgases aus Eingang bzw. Ausgang verringern. Da das Substrat am Eingang in der Regel mit einer ungehärteten, also klebrigen Beschichtungsmasse überzogen ist, sollten derartige Vorrichtungen am Eingang das Substrat nicht berühren.In a further preferred embodiment, input 13 and / or output 14 are provided with devices which reduce leakage of the inert gas contained in the device from the input or output. Since the substrate at the entrance is usually coated with an uncured, so sticky coating mass, such devices should not touch the substrate at the entrance.

Beispiele für geeignete Vorrichtungen sind Blenden, Bürsten, Vorhänge, Vorhangsstreifen, feinmaschige Netze, Federn, Türen, Schiebetüren oder Schleusen. Von diesen können, falls gewünscht, auch mehrere hintereinandergeschaltet werden. Geeig-net sind auch Vor- und Nachfluter an den Ein- und/oder Ausgängen. Bei Vor- bzw. Nachflutern handelt es sich um Inertgas enthaltende Beckenmit dem Zweck, Luftwirbelungszonen von der Bestrahlungszone zu trennen. Dazu kann das Inertgasbecken von der Belichtungszone ausgehend sowohl in die Höhe als auch beidseitig in die Breite erweitert werden. Die Ausmaße der Vorfluter sind in erster Linie abhängig von Ein- und Austauchgeschwindigkeit und von der Geometrie des Substrats.Examples of suitable devices are screens, brushes, curtains, curtain strips, fine meshes, springs, doors, sliding doors or locks. Of these, if desired, several can be connected in series. Pre-and post-flooders at the inputs and / or outputs are also suitable. Pre- and post-floods are inert gas-containing basins with the purpose of separating air vortex zones from the irradiation zone. For this purpose, the inert gas tank can be extended from the exposure zone both in the height and on both sides in the width. The dimensions of the receiving waters are primarily dependent on the rate of entry and exit and on the geometry of the substrate.

Sind sowohl Ein- als auch Ausgang mit derartigen Vorrichtungen versehen, so stellt es eine bevorzugte Ausführungsform dar, Ein- und Ausgang gleichzeitig mit diesen Vorrichtungen zu öffnen bzw. zu verschließen. D.h., daß in dem Zeitraum, in dem ein Substrat den Eingang passiert und die dortige Vorrichtung, beispielsweise eine Tür, Schiebetür, Blende oder Schleuse, geöffnet ist, gleichzeitig ein gehärtetes Substrat den Ausgang passiert und die dort befindliche Vorrichtung ebenfalls geöffnet ist.If both input and output are provided with such devices, it is a preferred embodiment to open and close the input and output simultaneously with these devices. That is, in the period in which a substrate passes through the entrance and the local device, such as a door, sliding door, Aperture or lock, is open, at the same time a hardened substrate passes through the output and the device located there is also open.

Ist die erfindungsgemäße Vorrichtung jedoch an einem zugigen Standort aufgestellt, so kann es bevorzugt sein, Ein- und Ausgang wechselseitig zu verschließen, da so ein Durchzug durch die erfindungsgemäße Vorrichtung vermieden werden kann.However, if the device according to the invention is set up in a drafty location, then it may be preferable to close the input and output reciprocally, since such a passage through the device according to the invention can be avoided.

Ein- und/oder Ausgang können in einer weiteren bevorzugten Ausführungsform auch mit Vorrichtungen versehen sein, die Turbulenzen oder Strömungen vermindern. Dabei kann es sich beispielsweise um längs der Förderrichtung angeordnete Leitbleche 17 oder -gitter, mehrere hintereinandergeschaltete feinmaschige Netze oder quer zur Förderrichtung angeordnete Leitbleche 18 handeln, die bevorzugt möglichst nah dem Substratquerschnitt angepaßt sind (Figuren 5 bis 8).In another preferred embodiment, the inlet and / or outlet can also be provided with devices which reduce turbulence or flow. These may be, for example, guide plates 17 or grids arranged along the conveying direction, a plurality of finely meshed nets connected in series, or guide plates 18 arranged transversely to the conveying direction, which preferably are adapted as close as possible to the substrate cross section. FIGS. 5 to 8 ).

In einer bevorzugten Ausführungsform der Erfindung bei Verwendung eines Inertgases, das leichter als Luft ist, sind Eingang 13 und/oder Ausgang 14 der erfindungsgemäßen Vorrichtung in der unteren Hälfte der Vorrichtung, bezogen auf die Höhe h der Vorrichtung, angebracht, besonders bevorzugt im unteren Drittel und ganz besonders bevorzugt weitestmöglich unten oder in der unteren Abdeckung 7 (Figur 1).In a preferred embodiment of the invention using an inert gas that is lighter than air, the inlet 13 and / or outlet 14 of the device according to the invention in the lower half of the device, relative to the height h of the device, attached, more preferably in the lower third and most preferably as far as possible down or in the lower cover 7 (FIG. FIG. 1 ).

In einer bevorzugten Ausführungsform der Erfindung bei Verwendung eines Inertgases, das schwerer als Luft ist, sind Eingang 13 und/oder Ausgang 14 der erfindungsgemäßen Vorrichtung in der oberen Hälfte der Vorrichtung, bezogen auf die Höhe h der Vorrichtung, angebracht, besonders bevorzugt im oberen Drittel und ganz besonders bevorzugt weitestmöglich oben oder in der oberen Abdeckung 6 (Figur 9).In a preferred embodiment of the invention using an inert gas which is heavier than air, entry 13 and / or exit 14 of the apparatus according to the invention in the upper half of the apparatus, based on the height h of the device, mounted, particularly preferably in the upper third and most preferably as far as possible at the top or in the top cover 6 (FIG. FIG. 9 ).

Der Fördermechanismus 12 dient dazu, das Substrat S durch die Vorrichtung zu fördem. Derartige Fördermechanismen sind an sich bekannt und nicht erfindungswesentlich. Der Fördermechanismus kann durch die Vorrichtung hindurch oberhalb, unterhalb oder seitlich des Substrats angeordnet sein. In einer bevorzugten Ausführungsform wird das Substrat durch einen einseitigen oder beidseitigen seitlich angeordneten Fördermechanismus durch die Vorrichtung bewegt. Dies hat den Vorteil, daß kein Abrieb aus dem Fördermechanismus auf das gegebenenfalls noch ungehärtete Substrat fällt.The conveying mechanism 12 serves to convey the substrate S through the apparatus. Such funding mechanisms are known per se and not essential to the invention. The conveying mechanism can be arranged through the device above, below or laterally of the substrate. In a preferred embodiment, the substrate is moved through the device by a one-sided or two-sided laterally arranged conveying mechanism. This has the advantage that no abrasion from the conveying mechanism falls on the possibly still uncured substrate.

Die Förderung des Substrats kann beispielsweise an Fließbändern, Ketten, Seilen oder Schienen erfolgen. Falls gewünscht, kann sich das Substrat auch innerhalb der erfindungsgemäßen Vorrichtung drehen, dies ist jedoch erfindungsgemäß weniger bevorzugt.The promotion of the substrate can be done for example on conveyor belts, chains, ropes or rails. If desired, the substrate may also rotate within the device of the invention, but this is less preferred in the present invention.

Werden andere als dreidimensionale Objekte durch die erfindungsgemäße Vorrichtung gefördert, beispielsweise Fasern, Folien oder Bodenbelege, so kann die Fördervorrichtung 12 aus Walzen und/oder Rollen bestehen, über die das Substrat gefördert wird.If objects other than three-dimensional are conveyed through the device according to the invention, for example fibers, films or floor coverings, then the conveying device 12 can consist of rollers and / or rollers, via which the substrate is conveyed.

Die erfindungsgemäße Vorrichtung enthält mindestens eine Strahlungsquelle 10, The device according to the invention contains at least one radiation source 10,

Die Strahlungshärtung kann mit Elektronenstrahlen, Röntgen- oder Gammastrahlen, NIR-, IR- und/oder UV-Strahlung oder sichtbarem Licht erfolgen. Es ist ein Vorteil der erfindungsgemäßen Härtung unter Inertgasatmosphäre, daß die Strahlungshärtung mit einer breiten Vielfalt von Strahlungsquellen auch niedriger Intensität erfolgen kann.The radiation curing can be carried out with electron beams, X-rays or gamma rays, NIR, IR and / or UV radiation or visible light. It is an advantage of the inventive hardening under inert gas atmosphere that the radiation curing can be done with a wide variety of sources of radiation and low intensity.

Erfindungsgemäß verwendbare Strahlungsquellen sind solche, die energiereiche Strahlung abzugeben vermögen. Energiereiche Strahlung ist dabei solche elektromagnetische Strahlung im spektralen NIR-, VIS- und/oder UV-Bereich und/oder Elektronenstrahlung.Radiation sources which can be used according to the invention are those which are capable of emitting high-energy radiation. High-energy radiation is in this case electromagnetic radiation in the spectral NIR, VIS and / or UV range and / or electron radiation.

Mit NIR-Strahlung ist hier elektromagnetische Strahlung im Wellenlängenbereich von 760 nm bis 2,5 µm, bevorzugt von 900 bis 1500 nm bezeichnet.With NIR radiation here electromagnetic radiation in the wavelength range of 760 nm to 2.5 microns, preferably from 900 to 1500 nm is designated.

UV-Strahlung oder Tageslicht umfaßt Licht im Wellenlängenbereich von λ=200 bis 760 nm, besonders bevorzugt von λ=200 bis 500 nm und ganz besonders bevorzugt λ=250 bis 430 nm.UV radiation or daylight comprises light in the wavelength range of λ = 200 to 760 nm, more preferably of λ = 200 to 500 nm and most preferably λ = 250 to 430 nm.

Die üblicherweise zur Härtung von Beschichtungsmasse ausreichende Strahlungsdosis bei UV-Härtung liegt im Bereich von 80 bis 5000 mJ/cm2.The radiation dose for UV curing, which is usually sufficient to cure the coating composition, is in the range from 80 to 5000 mJ / cm 2 .

Unter Elektronenstrahlung wird Bestrahlung mit energiereichen Elektronen (150 bis 300 keV) verstanden.By electron radiation is meant irradiation with high-energy electrons (150 to 300 keV).

Erfindungsgemäß bevorzugt sind NIR und/oder UV-Strahlung und besonders bevorzugt Strahlung mit Wellenlängen unter 500 nm. Ganz besonders bevorzugt ist Strahlung mit einer Wellenlänge unter 500 nm, die in einer Belichtungszeit von 10 Sekunden eine Belichtungsdosis auf dem Substrat von mehr als 100 mJ/cm2 der Substratoberfläche ergeben.Preference according to the invention is given to NIR and / or UV radiation and particularly preferably to radiation having wavelengths below 500 nm. Very particular preference is given to radiation having a wavelength of less than 500 nm which has an exposure dose on the substrate of more than 100 mJ / sec within an exposure time of 10 seconds. cm 2 of the substrate surface.

In Betracht kommen Lampen, die ein Linienspektrum aufweisen, daß heißt nur bei bestimmten Wellenlängen abstrahlen, z. B. Leuchtdioden oder Laser.Can be considered lamps that have a line spectrum, that is radiate only at certain wavelengths, z. B. LEDs or lasers.

In Betracht kommen ebenfalls Lampen mit Breitbandspektrum, daß heißt, einer Verteilung des emittierten Lichts über einen Wellenlängenbereich. Intensitätsmaxima liegen dabei vorzugsweise im Bereich unterhalb 430 nm.Also contemplated are broad band spectrum lamps, that is, a distribution of emitted light over a range of wavelengths. Intensity maxima are preferably in the range below 430 nm.

Als Strahlungsquellen für die Strahlungshärtung geeignet sind z.B. Quecksilber-Niederdruckstrahler, -Mitteldruckstrahler mit Hochdruckstrahler sowie Leuchtstoffröhren, Impulsstrahler, Metallhaiogenidstrahler, Elektronenblitzeinrichtungen, wodurch eine Strahlungshärtung ohne Photoinitiator möglich ist, oder Exccimerstrahler. Quecksilberstrahler können mit Gallium oder Eisen dotiert sein.Suitable radiation sources for radiation curing are, for example, low-pressure mercury lamps, medium-pressure lamps with high-pressure lamps and fluorescent tubes, pulse emitters, Metallhaiogenidstrahler, electronic flash devices, which Radiation curing without photoinitiator is possible, or Exccimerstrahler. Mercury radiators can be doped with gallium or iron.

Die Strahlungshärtung beim erfindungsgemäßen Verfahren kann auch mit Tageslicht erfolgen oder mit Lampen, welche als Tageslichtersatz dienen. Diese Lampen strahlen im sichtbaren Bereich oberhalb 400 nm ab und haben im Vergleich zu UV-Lampen nur geringe oder keine UV-Lichtanteile. Genannt seien z.B. Glühlampen, Halogenlampen, Xenonlampen.Radiation curing in the process according to the invention can also be effected with daylight or with lamps which serve as a substitute for daylight. These lamps emit in the visible range above 400 nm and have in comparison to UV lamps only little or no UV light components. Called e.g. Incandescent lamps, halogen lamps, xenon lamps.

Ebenso geeignet sind gepulste Lampen z.B. Fotoblitzlampen oder Hochleistungsblitzlampen (Fa. VISIT). Ein besonderer Vorteil des Verfahrens ist die Einsetzbarkeit von Lampen mit niedrigem Energiebedarf und niedrigem UV-Anteil, z.B. von 500 Watt Halogen-Lampen, wie sie zu allgemeinen Beleuchtungszwecken eingesetzt werden. Dadurch kann sowohl auf eine Hochspannungseinheit zur Stromversorgung (bei Quecksilberdampflampen) sowie gegebenenfalls auf Lichtschutzmaßnahmen verzichtet werden. Auch besteht mit Halogenlampen auch an Luft keine Gefährdung durch Ozonentwicklung wie bei kurzwellig abstrahlenden UV-Lampen. Dadurch wird die Strahlungshärtung mit transportablen Bestrahlungsgeräten erleichtert und Anwendungen "vor Ort", also unabhängig von feststehenden industriellen Härtungsanlagen sind möglich.Also suitable are pulsed lamps e.g. Photo flash lamps or high-power flash lamps (VISIT). A particular advantage of the method is the usability of low energy and low UV lamps, e.g. 500 watt halogen lamps, as they are used for general lighting purposes. As a result, both a high-voltage unit for power supply (in the case of mercury vapor lamps) and optionally light protection measures can be dispensed with. Also, there is no danger from ozone development in air with halogen lamps, as with short-wave UV lamps. This facilitates radiation hardening with portable irradiation equipment and enables "on-site" applications, ie independent of fixed industrial curing plants.

Es können beliebig viele Strahlungsquellen für die Härtung eingesetzt werden, die jeweils gleich oder voneinander verschieden sein können.Any number of radiation sources can be used for the curing, each of which may be the same or different.

Gegebenenfalls ist auch eine zur Substratgeometrie und zur Fördergeschwindigkeit angepasste Strahlungsquellenanordnung möglich, um gezielt bestimmte Flächen Intensiver zu belichten.Optionally, a radiation source arrangement adapted to the substrate geometry and to the conveying speed is also possible in order to expose specific areas more intensively.

Um schwer zugängliche Bereiche besonders von dreidimensionalen Substraten zu belichten ist es denkbar, daß zumindest ein Teil der Strahlungsquellen und/oder zumindest ein Teil von vorhandenen Reflektoren beweglich ausgeführt ist, beispielsweise an Roboterarmen, so daß auch beispielsweise innerhalb von Substraten liegende Schattenbereiche belichtet werden können.In order to expose difficult to access areas, especially of three-dimensional substrates, it is conceivable that at least a portion of the radiation sources and / or at least a part of existing reflectors is designed to be movable, for example on robot arms, so that, for example, shadow areas lying within substrates can also be exposed.

Es kann auch sinnvoll sein, im Verlauf des Durchganges durch die erfindungsgemäße Vorrichtung das Substrat zunächst mit NIR-Strahlung zu behandeln und anschließend mit UV-Strahlung.It may also be useful during the passage through the device according to the invention to treat the substrate first with NIR radiation and then with UV radiation.

Die Dauer der Bestrahlung hängt vom gewünschten Härtungsgrad der Beschichtung oder des Formkörpers ab. Der Härtungsgrad läßt sich im einfachsten Fall an der Entklebung oder an der Kratzfestigkeit z.B. gegenüber dem Fingernagel oder gegenüber anderen Gegenständen wie Bleistift-, Metall- oder Kunststoffspitzen bestimmen. Ebenso sind im Lackbereich übliche Beständigkeitsprüfungen gegenüber Chemikalien, z.B. Lösemittel, Tinten etc. geeignet. Ohne Beschädigung der Lackflächen sind vor allem spektroskopische Methoden, insbesondere die Raman- und Infrarotspektroskopie, oder Messungen der dielektrischen oder akustischen Eigenschaften usw. geeignet.The duration of the irradiation depends on the desired degree of hardening of the coating or of the shaped body. In the simplest case, the degree of hardening can be determined on the decoating or on the scratch resistance, for example against the fingernail or against other objects such as pencil, metal or plastic tips. Likewise, in the paint area usual resistance to chemicals, For example, solvents, inks, etc. suitable. In particular, spectroscopic methods, in particular Raman and infrared spectroscopy, or measurements of the dielectric or acoustic properties, etc., are suitable without damaging the painted surfaces.

Da die Strahlungsquellen in der Regel ein starke Abwärme liefern, die für temperaturmpfindliche Substrate schädigend wirken kann, kann es sinnvoll sein, die Strahlungsquellen nicht vollständig Innerhalb des Innenraums der erfindungsgemäßen Vorrichtung anzubringen, sondern die Strahlungsquellen so anzubringen, daß Kühlvorrichtungen der Strahlungsquellen außerhalb der erfindungsgemäßen Vorrichtung angebracht sind und die Strahlungsquellen in die erfindungsgemäße Vorrichtung hineinleuchten.Since the radiation sources usually provide a large amount of waste heat, which can be damaging to temperature-sensitive substrates, it may be useful not completely install the radiation sources within the interior of the device according to the invention, but to install the radiation sources so that cooling devices of the radiation sources outside the device according to the invention are mounted and illuminate the radiation sources in the device according to the invention.

Dies kann beispielsweise dadurch erzielt werden, daß die Strahlungsquellen in die obere 6 oder untere Abdeckung 7 und/oder in die seitlichen Abdeckungen 4 und/oder 5 eingelassen sind und sich die Gehäuse und/oder Kühlaggregate außerhalb der erfindungsgemäßen Vorrichtung befinden.This can be achieved, for example, by virtue of the fact that the radiation sources are embedded in the upper 6 or lower cover 7 and / or in the lateral covers 4 and / or 5 and the housings and / or cooling units are located outside the device according to the invention.

In einer bevorzugten Ausführung der Erfindung sind die Strahlungsquellen vollständig innerhalb der erfindungsgemäßen Vorrichtung angebracht, so daß die Abwärme für eine gegebenenfalls erforderliche Trocknung der Beschichtungsmasse auf dem Substrat genutzt werden kann (siehe unten).In a preferred embodiment of the invention, the radiation sources are completely mounted within the device according to the invention, so that the waste heat can be used for an optionally required drying of the coating composition on the substrate (see below).

Weiterhin können zur Erhöhung der Ausnutzung der energiereichen Strahlung ein oder mehrere Reflektoren in der erfindungsgemäßen Vorrichtung angebracht sein, beispielsweise Spiegel, Aluminium- oder sonstige Metallfolien oder blanke Metalloberflächen. In einer bevorzugten Ausführungsform können die Oberflächen der Wände oder Abdeckungen 2, 3, 4, 5, 6, 7, 8 und/oder 9 selber als Reflektoren ausgeführt sein.Furthermore, in order to increase the utilization of the high-energy radiation, one or more reflectors may be provided in the device according to the invention, for example mirrors, aluminum or other metal foils or bare metal surfaces. In a preferred embodiment, the surfaces of the walls or covers 2, 3, 4, 5, 6, 7, 8 and / or 9 may themselves be designed as reflectors.

Die mindestens eine Strahlungsquelle 10 kann in der erfindungsgemäßen Vorrichtung bezogen auf die gesamte Weglänge der Fördervorrichtung durch die erfindungsgemäße Vorrichtung bevorzugt im Bereich von 25% der gesamten Weglänge bis zu 80 % der gesamten Weglänge positioniert sein, besonders bevorzugt im Bereich von 33% bis zu 75% der gesamten Weglänge, ganz besonders bevorzugt im Bereich von 40 % bis zu 75% und insbesondere im Bereich von 50 % bis zu 75 % der gesamten Weglänge.The at least one radiation source 10 may be positioned in the device according to the invention with respect to the total path length of the conveyor by the device according to the invention preferably in the range of 25% of the total path length up to 80% of the total path length, more preferably in the range of 33% up to 75 % of the total path length, most preferably in the range of 40% to 75%, and more preferably in the range of 50% to 75% of the total path length.

Diese Angaben beziehen sich dabei auf die Weglänge der Fördervorrichtung durch die erfindungsgemäße Vorrichtung, d.h. am Eingang beträgt diese Weglänge 0 %, am Ausgang 100 % und in der Mitte 50 % der gesamten Weglänge.This information refers to the path length of the conveyor by the device according to the invention, i. at the entrance, this path length is 0%, at the exit 100% and in the middle 50% of the total path length.

Die mindestens eine Strahlungsquelle kann auch über einen breiten Bereich verteilt sein, so daß eine Zone entsteht, innerhalb der bestrahlt wird.The at least one radiation source can also be distributed over a wide range, so that a zone is formed within which is irradiated.

In einer besonders bevorzugten Ausführungsform befindet sich mindestens eine Strahlungsquelle 10 vor der Gaszuführungsvorrichtung 11, betrachtet in Förderrichtung der Fördervorrichtung 12, ganz besonders bevorzugt befindet sich dabei mindestens eine Strahlungsquelle 10 an den seitlichen Abdeckungen 4 und/oder 5 und/oder an den Trennwänden 8 und/oder 9 (Figur 10).In a particularly preferred embodiment, at least one radiation source 10 is located in front of the gas supply device 11, viewed in the conveying direction of the conveying device 12, very particularly preferred is at least one radiation source 10 on the side covers 4 and / or 5 and / or on the partitions 8 and / or 9 ( FIG. 10 ).

Dies bewirkt, daß die Strömung des Inertgases zumindest zwischen dem Eingang 13 und der Gaszuführungsvorrichtung 11 bevorzugt im Gegenstrom zur Förderrichtung der Fördereinrichtung 12 verläuft.This causes the flow of the inert gas, at least between the inlet 13 and the gas supply device 11 preferably in countercurrent to the conveying direction of the conveyor 12 extends.

Das Inertgas kann prinzipiell an beliebiger Stelle durch mindestens eine Gaszuführungsvorrichtung 11 in die erfindungsgemäße Vorrichtung eindosiert werden.The inert gas can be metered at any position by at least one gas supply means 11 in the inventive apparatus in principle.

Der Strom des Inertgases kann sich prinzipiell im Gleich- oder im Gegenstrom bezogen auf die Förderrichtung der Fördereinrichtung 12 bewegen, bevorzugt wird das Inertgas so eindosiert, daß sich der Strom des Inertgases zwischen Eingang 13 und der Strecke, an der die Strahlungshärtung des Substrats erfolgt, im Gegenstrom zur Förderrichtung bewegt.The flow of inert gas can in principle be in cocurrent or countercurrent with respect to the conveying direction of the conveyor 12 move, preferably the inert gas is metered in so that the flow of inert gas between the inlet 13 and the distance at which the radiation curing of the substrate, moved in countercurrent to the conveying direction.

Bevorzugt wird das Inertgas im Bereich um und/oder nach der letzten Strahlungsquelle eindosiert, besonders bevorzugt innerhalb eines Viertels der gesamten Weglänge der Fördervorrichtung durch die erfindungsgemäße Vorrichtung vor und/oder hinter der Zone, innerhalb der bestrahlt wird, ganz besonders bevorzugt im Bereich von bis zu 15% der gesamten Weglänge vor und bis zu 25% hinter der Zone, in der bestrahlt wird und insbesondere im Bereich von bis zu 5% der gesamten Weglänge vor und bis zu 15% hinter der Zone, innerhalb der bestrahlt wird.Preferably, the inert gas is metered in the region around and / or after the last radiation source, more preferably within a quarter of the total path length of the conveyor by the inventive device before and / or behind the zone within which is irradiated, most preferably in the range from to up to 15% of the total path length before and up to 25% behind the zone in which irradiation takes place and in particular within the range of up to 5% of the total path length before and up to 15% behind the zone within which irradiation takes place.

Mit der Gaszuführungsvorrichtung 11 kann ein Gas oder Gasgemisch in den Innenraum geführt oder dort gebildet werden. Letzteres ist beispielsweise von Interesse, wenn das Inertgas in fester, beispielsweise Trockeneis, oder flüssiger Form, beispielsweise als Kondensat oder unter Druck, In die erfindungsgemäße Vorrichtung gegeben wird und dann dort sublimiert oder verdampft.With the gas supply device 11 , a gas or gas mixture can be guided into the interior or formed there. The latter is of interest, for example, when the inert gas in solid, for example dry ice, or liquid form, for example as condensate or under pressure, is added to the device according to the invention and then sublimated or evaporated there.

In einer bevorzugten Ausführungsform der Erfindung wird das Inertgas strömungs- und verwirbelungsarm in die erfindungsgemäße Vorrichtung geleitet, beispielsweise durch Strömungsvergleichmäßiger oder Strömungsgleichrichter, wie z.B. Lochbleche, Siebe, Sintermetall, Gitter, Fritten, Schüttungen, Waben- oder Rohrstrukturen, bevorzugt Lochbleche oder Gitter. Durch solche Strömungsvergleichmäßiger oder Strömungsgleichrichter werden eine schräge Anströmung oder ein Drall verringert.In a preferred embodiment of the invention, the inert gas is flow and vortex low in the device according to the invention passed, for example by Strömungsvergleichmäßiger or flow straightener, such as perforated plates, sieves, sintered metal, lattice, frits, beds, honeycomb or tubular structures, preferably perforated plates or grids. By such Strömungsvergleichmäßiger or flow straightener an oblique flow or a twist are reduced.

Die Zugabemenge des Inertgases wird erfindungsgemäß so angepaßt, daß man die Verluste an Inertgas durch eventuelle Lecks oder durch den Eingang und/oder Ausgang ausgleicht. Es wird selbstverständlich angestrebt, den Verbrauch an Inertgas so gering wie möglich zu halten. In der Regel beträgt mit der erfindungsgemäßen Vorrichtung die Zudosierung von Inertgas bei Ausgleich des Verlustes an Inertgas zusätzlich dem über das Fördergut verdrängte und ausgeschöpfte Inertgasvolumen nicht mehr als das zweifache des Innenvolumens der erfindungsgemäßen Vorrichtung pro Stunde, besonders bevorzugt nicht mehr als das einfache des Innenvolumens, ganz besonders bevorzugt nicht mehr als das 0,5-fache und insbesondere nicht mehr als das 0,25-fache des Innenvolumens der erfindungsgemäßen Vorrichtung pro Stunde.The addition amount of the inert gas according to the invention is adapted so that it compensates for the losses of inert gas through any leaks or through the input and / or output. It is of course desirable to keep the consumption of inert gas as low as possible. In general, with the device according to the invention, the metered addition of inert gas to compensate for the loss of inert gas in addition to the conveyed material displaced and exhausted inert gas volume not more than twice the internal volume of the device according to the invention per hour, more preferably not more than the simple of the internal volume, most preferably not more than 0.5 times and in particular not more than 0.25 times the internal volume of the device according to the invention per hour.

In einer bevorzugten Ausführungfsorm der vorliegenden Erfindung bei Einsatz eines Inertgases, das leichter als Luft ist, wird das Inertgas über eine Gaszuführungsvorrichtung 11 im oberen Drittel der erfindungsgemäßen Vorrichtung, bezogen auf deren Höhe h, zugeführt, besonders bevorzugt im oberen Viertel und ganz besonders bevorzugt in der oberen Abdeckung 6. In a preferred embodiment of the present invention using an inert gas that is lighter than air, the inert gas is fed via a gas supply device 11 in the upper third of the device according to the invention, based on the height h, more preferably in the upper quarter and most preferably in the upper cover 6.

In einer weiteren bevorzugten Ausführungsform der vorliegenden Erfindung bei Einsatz eines Inertgases, das leichter als Luft ist, wird das Inertgas vor, während oder nach der Zudosierung über eine Gaszuführungsvonichtung 11 erwärmt, beispielsweise auf eine Temperatur, die mindestens der Temperatur der Schutzgasatmosphäre entspricht, besonders bevorzugt auf eine Temperatur, die mindestens 10 °C oberhalb der Temperatur der Schutzgasatmosphäre liegt und ganz besonders bevorzugt auf eine Temperatur, die mindestens 20 °C oberhalb der Temperatur der Schutzgasatmosphäre liegt.In a further preferred embodiment of the present invention, when using an inert gas which is lighter than air, the inert gas is heated before, during or after the metered addition via a gas supply device 11 , for example to a temperature which corresponds at least to the temperature of the protective gas atmosphere to a temperature which is at least 10 ° C above the temperature of the protective gas atmosphere and very particularly preferably to a temperature which is at least 20 ° C above the temperature of the protective gas atmosphere.

In einer bevorzugten Ausführungsform der vorliegenden Erfindung bei Einsatz eines Inertgases, das schwerer als Luft ist, wird das Inertgas über eine Gaszuführungsvorrichtung 11 im unteren Drittel der erfindungsgemäßen Vorrichtung, bezogen auf dessen Höhe h, zugeführt, besonders bevorzugt im unteren Viertel und ganz besonders bevorzugt in der unteren Abdeckung 7. In a preferred embodiment of the present invention when using an inert gas which is heavier than air, the inert gas is fed via a gas supply device 11 in the lower third of the device according to the invention, based on the height h, more preferably in the lower quarter and most preferably in the lower cover 7.

In einer weiteren bevorzugten Ausführungsform der vorliegenden Erfindung bei Einsatz eines Inertgases, das schwerer als Luft ist, wird das Inertgas vor, während oder nach der Zudosierung über eine Gaszuführungsvorrichtung 11 gekühlt, beispielsweise auf eine Temperatur, die unterhalb der Temperatur der Schutzgasatmosphäre liegt, besonders bevorzugt auf eine Temperatur, die mindestens 10 °C unterhalb der Temperatur der Schutzgasatmosphäre liegt und ganz besonders bevorzugt auf eine Temperatur, die mindestens 20 °C unterhalb der Temperatur der Schutzgasatmosphäre liegt.In a further preferred embodiment of the present invention when using an inert gas which is heavier than air, the inert gas before, during or after the addition is cooled via a gas supply device 11 , for example to a temperature which is below the temperature of the protective gas atmosphere, particularly preferred to a temperature which is at least 10 ° C below the temperature of the protective gas atmosphere and very particularly preferably to a temperature which is at least 20 ° C below the temperature of the protective gas atmosphere.

Es stellt eine weitere bevorzugte Ausführungsform der Erfindung dar, in der erfindungsgemäßen Vorrichtung Stickstoff und Kohlendioxid gleichzeitig als Inertgase zu verwenden, wobei Stickstoff über eine Gaszuführungsvorrichtung 11 im oberen Drittel der erfindungsgemäßen Vorrichtung, bezogen auf deren Höhe h, zugeführt, besonders bevorzugt im oberen Viertel und ganz besonders bevorzugt in der oberen Abdeckung 6 und Kohlendioxid über eine Gaszuführungsvorrichtung 11 im unteren Drittel der erfindungsgemäßen Vorrichtung, bezogen auf dessen Höhe h, zugeführt, besonders bevorzugt im unteren Viertel und ganz besonders bevorzugt in der unteren Abdeckung 7 zugeführt, wird. In einer weiteren Ausgestaltung dieser Ausführungsform kann der Stickstoff wie oben beschrieben erwärmt und/oder das Kohlendioxid wie oben beschrieben gekühlt zudosiert werden. Dadurch kann innerhalb der erfindungsgemäßen Vorrichtung durch eine Überschichtung ein Dichtegradient der Inertgase erzielt werden.It represents a further preferred embodiment of the invention, in the device according to the invention to use nitrogen and carbon dioxide simultaneously as inert gases, with nitrogen via a gas supply device 11 in the upper third the device according to the invention, based on the height h, supplied, particularly preferably in the upper quarter and very particularly preferably in the upper cover 6 and carbon dioxide via a gas supply device 11 in the lower third of the device according to the invention, based on the height h, fed, particularly preferably in lower quarter and most preferably fed in the lower cover 7 , is. In a further embodiment of this embodiment, the nitrogen can be heated as described above and / or the carbon dioxide can be added cooled as described above. As a result, a density gradient of the inert gases can be achieved within the device according to the invention by overlaying.

Die seitlichen Abdeckungen 2, 3, 4 und/oder 5, sowie die oberen und unteren Abdeckungen 6 und/oder 7 sind in einer bevorzugten Ausführungsform thermostatiert oder isoliert ausgeführt, um einen Temperaturausgleich zwischen der erfindungsgemäßen Vorrichtung und der Umgebung so niedrig wie möglich zu halten. Durch einen Temperaturausgleich über die Außenwände könnten innerhalb der Vorrichtung unerwünschte Konvektionsströme auftreten.The side covers 2, 3, 4 and / or 5, as well as the upper and lower covers 6 and / or 7 are in a preferred embodiment thermostatted or insulated designed to keep a temperature balance between the device according to the invention and the environment as low as possible , By equalizing the temperature over the outer walls, unwanted convection currents could occur within the device.

Selbstverständlich kann die erfindungsgemäße Vorrichtung ein oder mehrere Mannlöcher oder Zugänge aufweisen, durch die der Innenraum zugängig ist, um beispielsweise Trennwände zu verschieben, die Abstände d1 und/oder d2 zu verändern oder Lampen auszutauschen. Vor Einstieg in die Vorrichtung sollte aus Arbeitssicherheitsgründen unbedingt das Inertgas aus dem Innenraum entfernt werden sowie die Strahlungsquellen abgeschaltet werden.Of course, the device according to the invention can have one or more manholes or accesses, through which the interior is accessible, for example, to move partitions, to change the distances d1 and / or d2 or to replace lamps. Before entering the device, the inert gas should be removed from the interior for safety reasons and the radiation sources switched off.

Applikation, Filmbildung, Abdunsten von Verdünnungsmittein und/oder thermische Vorreaktionen der Beschichtungsmasse erfolgt üblicherweise außerhalb der erfindungsgemäßen Vorrichtung.Application, film formation, evaporation of Verdünnungsmittein and / or thermal pre-reactions of the coating composition is usually carried out outside the device according to the invention.

Dabei spielt es erfindungsgemäß in der Regel keine Rolle, in welchem zeitlichen oder räumlichen Abstand von der erfindungsgemäßen Vorrichtung oder auf welche Weise die Applikation erfolgt.In this case, according to the invention, it generally does not matter in which temporal or spatial distance from the device according to the invention or in which way the application takes place.

Die Applikation kann beispielsweise durch Spritzen, Spachteln, Rakeln, Bürsten, Rollen, Walzen, Gießen, Laminieren, Tauchen, Fluten, Streichen etc. auf das Substrat aufgebracht werden. Die Beschichtungsstärke liegt in der Regel in einem Bereich von etwa 3 bis 1000 g/m2 und vorzugsweise 5 bis 200 g/m2.The application can be applied for example by spraying, filling, doctoring, brushing, rolling, rolling, pouring, laminating, dipping, flooding, brushing, etc. on the substrate. The coating thickness is usually in a range of about 3 to 1000 g / m 2 and preferably 5 to 200 g / m 2 .

In einer besonders bevorzugten Ausführungsform der Erfindung wird das mit einer Beschichtungsmasse beschichtete Substrat zumindest teilweise innerhalb der erfindungsgemäßen Vorrichtung getrocknet, d.h. es werden innerhalb der Vorrichtung leichtflüchtige Bestandteile der Beschichtungsmasse größtenteils entfernt. Bei derartigen leichtflüchtigen Bestandteilen kann es sich beispielsweise um in der Beschichtungsmasse enthaltene Lösungsmittel handeln. Dies können beispielsweise Ester, wie z.B. Butylacetat oder Ethylacetat, aromatische oder (cyclo)aliphatische Kohlenwasserstoffe, wie z.B. Xylol, Toluol oder Heptan, Ketone, wie z.B. Aceton, isoButylmethylketon, Methylethylketon oder Cyclohexanon, Alkohole wie z.B. Ethanol, isopropanol, Mono- oder niedere Oligoethylen- oder -propylenglykole, ein- oder zweifach veretherte Ethylen- oder Propylenglykolether, Glykoletheracetate, wie z.B. Methoxypropylacetat, cyclische Ether wie Tetrahydrofuran, Carbonsäureamide wie Dimethylformamid oder N-Methylpyrrolidon und/oder Wasser sein. Die Verdunstung und/oder Verdampfung von Lösungsmitteln im Trocknungsschritt innerhalb der erfindungsgemäßen Vorrichtung hat den Vorteil, daß die gasförmigen Lösungsmittel innerhalb der staubfreien Vorrichtung zur Inertatmosphäre beitragen, was den Inertgasverbrauch verringert, und zusätzlich während der Härtung einen Weichmacher-Effekt auf die Beschichtung ausübt, wodurch diese flexibler wird. Daher ist es erfindungsgemäß von Vorteil, wenn die in der erfindungsgemäßen Vorrichtung befindliche Inertgasatmosphäre zu mindestens 2,5 Vol%, bevorzugt zu mindestens 5, besonders bevorzugt zu mindestens 7,5 und ganz besonders bevorzugt zu mindestens 10 Vol% einen Anteil an einem oder mehreren Lösungsmitteln aufweist.In a particularly preferred embodiment of the invention, the substrate coated with a coating composition is dried at least partially within the apparatus according to the invention, ie, volatile components of the coating composition are largely removed within the apparatus. Such volatile constituents may be, for example, in the coating composition contained solvents act. These may, for example, esters, such as butyl acetate or ethyl acetate, aromatic or (cyclo) aliphatic hydrocarbons, such as xylene, toluene or heptane, ketones, such as acetone, isobutyl methyl ketone, methyl ethyl ketone or cyclohexanone, alcohols such as ethanol, isopropanol, mono- or lower Oligoethylen- or -propylene glycols, mono- or di-etherified ethylene or propylene glycol ethers, glycol ether acetates such as methoxypropyl acetate, cyclic ethers such as tetrahydrofuran, carboxylic acid amides such as dimethylformamide or N-methylpyrrolidone and / or water. The evaporation and / or evaporation of solvents in the drying step within the device according to the invention has the advantage that the gaseous solvents within the dust-free device contribute to the inert atmosphere, which reduces the inert gas consumption, and additionally exerts a plasticizing effect on the coating during curing, thereby this becomes more flexible. Therefore, it is advantageous according to the invention if the inert gas atmosphere present in the device according to the invention contains at least 2.5% by volume, preferably at least 5, particularly preferably at least 7.5 and very particularly preferably at least 10% by volume a proportion of one or more Having solvents.

In einer weiteren besonders bevorzugten Ausführungsform weist die erfindungsgemäße Vorrichtung zusätzlich eine Kondensationsmöglichkeit 19 (Figur 11) auf, in der die in der Inertgasatmosphäre innerhalb der erfindungsgemäßen Vorrichtung befindlichen Lösungsmittel auskondensiert werden können. Derartige Kondensationsmöglichkeiten befinden sich bevorzugt am Ein- und/oder Ausgang der erfindungsgemäßen Vorrichtung. Bei diesen kann es sich beispielsweise um innerhalb der Vorrichtung liegende Platten- oder Rohrbündelwärmetauscher, Kühlwendeln oder Kühlfinger handeln, die entweder mit einem externen Kühlmedium im Gleich- oder Gegenstrom, bevorzugt im Gegenstrom bezogen auf die Förderrichtung des Substrats betrieben werden, oder bevorzugt, im Fall von Trockeneis als Quelle für CO2 als Inertgas innerhalb der Vorrichtung, mit Trockeneis betrieben werden, wodurch gleichzeitig Inertgas innerhalb der Vorrichtung generiert wird und das Lösungsmittel wiedergewonnen werden kann. Das Kondensat wird dann gesammelt und außerhalb der Vorrichtung gefördert, beispielsweise durch einen Heber, Ausfluß oder Auslauf, gegebenenfalls mit einem Syphon. Durch ein solches Kondensieren und gegebenenfalls Wiederverwenden des Lösungsmittels werden die Emissionen sowie der Verbrauch an Lösungsmittel deutlich verringert.In a further particularly preferred embodiment, the device according to the invention additionally has a condensation possibility 19 (FIG. FIG. 11 ), in which the solvents located in the inert gas atmosphere within the device according to the invention can be condensed out. Such condensation options are preferably located at the input and / or output of the device according to the invention. These may be, for example, plate or shell-and-tube heat exchangers, cooling coils or cold fingers which are operated either with an external cooling medium in cocurrent or countercurrent, preferably in countercurrent to the conveying direction of the substrate, or preferably in the case of dry ice as the source of CO 2 as the inert gas within the apparatus to be operated with dry ice, which is generated at the same time inert gas within the apparatus and the solvent can be recovered. The condensate is then collected and conveyed outside the device, for example by a siphon, effluent or spout, optionally with a siphon. Such condensation and optionally reuse of the solvent significantly reduces emissions and solvent consumption.

Zum Trocknen der Beschichtungsmasse auf den beschichteten Substraten innerhalb der erfindungsgemäßen Vorrichtung wird die Inertgasatmosphäre und/oder die Beschichtungsmasse über einen Zeitraum von mindestens 1 Minute, bevorzugt mindestens 2 min, besonders bevorzugt mindestens 3 min und ganz besonders bevorzugt mindestens 5 min auf eine Temperatur von mindestens 50 °C, bevorzugt mindestens 60 °C, besonders bevorzugt mindestens 70 °C und ganz besonders bevorzugt mindestens 80 °C erwärmt.For drying the coating composition on the coated substrates within the device according to the invention, the inert gas atmosphere and / or the coating composition over a period of at least 1 minute, preferably at least 2 min, more preferably at least 3 min and most preferably at least 5 min to a temperature of at least 50 ° C, preferably at least 60 ° C, more preferably at least 70 ° C and most preferably at least 80 ° C heated.

Die Wärme für die Trocknung kann dabei beispielsweise durch Ausnutzung der Abwärme der mindestens einen Strahlungsquelle 10 oder über mindestens eine zusätzliche Heizvorrichtung 20 eingebracht werden, die sich zwischen Eingang und Bestrahlung der beschichteten Substrate befindet. Derartige Heizvorrichtungen 13 sind dem Fachmann an sich bekannt, bevorzugt handelt es sich um IR- und/oder NIR-Strahler, die die Beschichtungsmasse erwärmen. Mit NIR-Strahlung ist hier elektromagnetische Strahlung im Wellenlängenbereich von 760 nm bis 2,5 µm, bevorzugt von 900 bis 1500 nm bezeichnet, mit IR-Strahlung der Wellenlängenbereich von 25 -1000 µm (fernes IR) und bevorzugt 2,5 - 25 µm (mittleres IR). Bevorzugt wird zum Trocknen Strahlung mit einer Wellenlänge von 1 bis 5 µm eingesetzt.The heat for the drying can be introduced, for example, by utilizing the waste heat of the at least one radiation source 10 or via at least one additional heating device 20 , which is located between the input and irradiation of the coated substrates. Such heaters 13 are known per se to those skilled in the art, it is preferably IR and / or NIR emitters that heat the coating composition. With NIR radiation is here electromagnetic radiation in the wavelength range of 760 nm to 2.5 microns, preferably from 900 to 1500 nm, with IR radiation, the wavelength range of 25 -1000 microns (far IR), and preferably 2.5 - 25 microns (middle IR). For drying, radiation with a wavelength of 1 to 5 μm is preferably used.

In einer bevorzugten Ausführungsform wird die Strahlungshärtung zumindest teilweise bevorzugt vollständig dann durchgeführt, wenn die Beschichtungsmasse auf den beschichteten Substraten eine Temperatur von 50 °C oder mehr aufweist, bevorzugt von mindestens 60 °C, besonders bevorzugt von mindestens 70 °C und ganz besonders bevorzugt von mindestens 80 °C. Dabei ist es von untergeordneter Bedeutung, wie die Beschichtungsmasse auf diese Temperatur gebracht wird, ob durch Erwärmen der Inertgasatmosphäre und/oder durch Strahlungsquellen 10 und/oder durch zusätzliche Heizvorrichtungen 20 und/oder auf andere Weise.In a preferred embodiment, the radiation curing is at least partially preferably carried out completely when the coating composition on the coated substrates has a temperature of 50 ° C or more, preferably of at least 60 ° C, more preferably of at least 70 ° C and most preferably of at least 80 ° C. In this case, it is of minor importance how the coating composition is brought to this temperature, whether by heating the inert gas atmosphere and / or by radiation sources 10 and / or by additional heating devices 20 and / or in another way.

Wird die Strahlungshärtung zumindest teilweise bei einer solchen erhöhten Temperatur der Beschichtungsmasse durchgeführt, so findet man bei der so erhaltenen Beschichtung bessere Eigenschaften. Der Grund dafür ist unklar könnte beispielsweise in einer verringerten Viskosität der erwärmten Beschichtungsmasse liegen.If the radiation curing is carried out at least partially at such an elevated temperature of the coating composition, the coating thus obtained has better properties. The reason for this is unclear, for example, could be a reduced viscosity of the heated coating composition.

Die Verweilzeit innerhalb der Vorrichtung ist abhängig davon, ob innerhalb der erfindungsgemäßen Vorrichtung eine zusätzliche Trocknung erfolgen soll oder nicht. Üblicherweise beträgt die Verweilzeit ohne Trocknung innerhalb der erfindungsgemäßen Vorrichtung, also vom Passieren des Substrats durch den Eingang bis zum Passieren des Ausgangs, mindestens eine Minute, bevorzugt mindestens 2 min, besonders bevorzugt mindestens 3 min, ganz besonders bevorzugt mindestens 4 min und insbesondere mindestens 5 min. Die Verweilzeit ohne Trocknung innerhalb der erfindungsgemäßen Vorrichtung überschreitet In der Regel nicht 15 min, bevorzugt beträgt sie nicht mehr als 12 min, besonders bevorzugt nicht mehr als 10 min, ganz besonders bevorzugt nicht mehr als 9 min und insbesondere nicht mehr als 7 min. Eine höhere Verweilzeit hat zwar in der Regel keinen nachteiligen Effekt auf die Härtung der Beschichtungsmasse, hat jedoch auch keinen positiven Effekt und führt so zu unnötig großen Vorrichtungen.The residence time within the device depends on whether or not additional drying is to take place within the device according to the invention. The residence time without drying within the device according to the invention, ie from the passage of the substrate through the entrance to the passage of the exit, is usually at least one minute, preferably at least 2 minutes, more preferably at least 3 minutes, most preferably at least 4 minutes and especially at least 5 minute The residence time without drying within the device according to the invention generally does not exceed 15 minutes, preferably it is not more than 12 minutes, particularly preferably not more than 10 minutes, very particularly preferably not more than 9 minutes and in particular not more than 7 minutes. Although a higher residence time usually has no adverse effect on the curing of the coating composition, but also has no positive effect and thus leads to unnecessarily large devices.

Enthält die erfindungsgemäßen Vorrichtung noch eine zusätzliche Trocknung, so muß selbstverständlich die Zeit für die Trocknung noch zur angegebenen Verweilzeit addiert werden.Contains the device according to the invention still an additional drying, so of course the time for drying must be added to the specified residence time.

Die Länge der Fördererinrichtung 12 durch die erfindungsgemäße Vorrichtung und die Geschwindigkeit der Förderung des Substrats wird entsprechend an diese Verweilzeit angepaßt. Die Verweilzeit des Substrats in der Vorrichtung hängt beispielsweise vom Substrat, sowie dessen Größe, Gewicht und der Komplexität seiner Struktur, sowie Reaktivität, Art (beispielsweise Pigmentierung), Menge, Dicke und Fläche der zu härtenden Beschichtungsmasse bzw. des diese enthaltenden Lacks auf dem Substrat ab.The length of the Fördererinrichtung 12 by the device according to the invention and the speed of conveying the substrate is adapted accordingly to this residence time. The residence time of the substrate in the device depends, for example, on the substrate, as well as its size, weight and complexity of its structure, as well as reactivity, type (eg pigmentation), amount, thickness and area of the coating composition to be cured or of the coating containing it on the substrate from.

Die Fördergeschwindigkeit von dreidimensionalen Objekten durch die erfindungsgemäße Vorrichtung kann beispielsweise 0,5 bis 10 m/min, bevorzugt 1 -10 m/min, besonders bevorzugt 2 - 8 m/min, ganz besonders bevorzugt 3 - 7 und insbesondere um 5 m/min betragen. Objekte mit gasschöpfenden Teilen, wie Verkleidungsteile oder Gehäuse für Fahrzeuge oder Maschinen, werden ähnlich schnell befördert, erfordern aber zusätzliche Maßnahmen zur Verminderung des Sauerstoffeintrags, insbesondere durch verlängerte Wegstrecken.The conveying speed of three-dimensional objects through the device according to the invention can be, for example, 0.5 to 10 m / min, preferably 1 to 10 m / min, more preferably 2 to 8 m / min, most preferably 3 to 7 and in particular 5 m / min be. Objects with gas-producing parts, such as trim parts or housings for vehicles or machines, are conveyed similarly fast, but require additional measures to reduce the oxygen input, in particular by means of extended distances.

Dreidimensionale Objekte sind dabei solche, deren Beschichtung mit einer Beschichtungsmasse nicht durch direkte Bestrahlung aus genau einer Strahlungsquelle zumindest theoretisch gehärtet werden könnte.Three-dimensional objects are those whose coating with a coating composition could not be at least theoretically cured by direct irradiation from exactly one radiation source.

Für Bahnenware, wie beispielsweise Folien oder Bodenbelag, kann die Fördergeschwindigkeit bis über 100m/min und für die Fasern bis über 1000 m/min betragen. In diesen Fällen kann die Fördereinrichtung 12 beispielsweise Walzen und/oder Rollen umfassen.For sheet goods, such as films or flooring, the conveying speed can be up to about 100m / min and for the fibers to over 1000 m / min. In these cases, the conveyor 12 may include, for example, rollers and / or rollers.

Es kann sinnvoll sein, innerhalb der Vorrichtung zwei oder mehr parallele Fördervorrichtungen vorzusehen, die die Substrate durch jeweils einen gemeinsamen Ein- und Ausgang fördern aber innerhalb der Vorrichtung voneinander getrennte Strecken durchlaufen. Dies hat den Vorteil, daß die Anzahl der Ein- und Ausgänge, über die das meisten Inertgas verloren geht, so gering wie möglich gehalten wird.It may be useful to provide within the device, two or more parallel conveyors, which promote the substrates by a common input and output but go through separate distances within the device. This has the advantage that the number of inputs and outputs over which most of the inert gas is lost is kept as low as possible.

Um die Verluste an Inertgas zu vermeiden, sollte die erfindungsgemäße Vorrichtung an einem zugfreien Standort aufgestellt werden, da bereits durch eine leichte Strömung, die die Vorrichtung umspült, Inertgas aus der erfindungsgemäßen Vorrichtung gesogen werden kann. Selbstverständlich ist jedoch aus Sicherheitsgründen auf eine ausreichende Belüftung des Standortes der Vorrichtung zu achten, um eine inertisierung der Umgebung, die das Bedienungspersonal gefährden könnte, zu vermeiden.In order to avoid the losses of inert gas, the device according to the invention should be set up in a draft-free location, since inert gas can already be sucked out of the device according to the invention by a slight flow which flows around the device. Of course, however, for safety reasons, attention must be paid to adequate ventilation of the location of the device, in order to avoid inertization of the environment, which could jeopardize the operating personnel.

Zur Minimierung des Inertgasbedarfs in der erfindungsgemäßen Vorrichtung können Luftströmungen, die über Luftaustausch an Applikations- und Trocknungseinrichtungen vorhanden sind, reduziert werden, indem man entsprechend Abstand zu diesen Applikations- und Trocknungseinrichtungen hält oder diese Luftströmungen mit beispielsweise Abschirmwänden umleitet oder bricht.In order to minimize the inert gas requirement in the device according to the invention, air flows which are present via air exchange at application and drying devices can be reduced by keeping corresponding distance to these application and drying devices or by redirecting or breaking these air flows with, for example, shielding walls.

Strahlungshärtbare Beschichtungsmassen enthalten strahlungshärtbare Verbindungen als Bindemittel. Dies sind Verbindungen mit radikalisch oder kationisch polymerisierbaren ethylenisch ungesättigten Gruppen. Vorzugsweise enthält die strahlungshärtbare Masse 0,001 bis 12, besonders bevorzugt 0,1 bis 8 und ganz besonders bevorzugt 0,5 bis 7 Mol, strahlungshärtbare ethylenisch ungesättigte Gruppen auf 1000 g strahlungshärtbare Verbindungen.Radiation-curable coating compositions contain radiation-curable compounds as binders. These are compounds with free-radically or cationically polymerizable ethylenically unsaturated groups. The radiation-curable composition preferably contains from 0.001 to 12, more preferably from 0.1 to 8, and very particularly preferably from 0.5 to 7, moles of radiation-curable ethylenically unsaturated groups per 1000 g of radiation-curable compounds.

Als strahlungshärtbare Verbindungen kommen z. B. (Meth)acrylverbindungen, Vinylether, Vinylamide, ungesättigte Polyester z.B. auf Basis von Maleinsäure oder Fumarsäure gegebenenfalls mit Styrol als Reaktivverdünner oder Maleinimid/Vinylether-Systemen in Betracht.As radiation-curable compounds come z. For example, (meth) acrylic compounds, vinyl ethers, vinylamides, unsaturated polyesters e.g. based on maleic acid or fumaric acid optionally with styrene as a reactive diluent or maleimide / vinyl ether systems into consideration.

Bevorzugt sind (Meth)acrylatverbindungen wie Polyester(meth)acrylate, Polyether(meth)acrylate, Urethan(meth)acrylate, Epoxi(meth)acreylate, Carbonat(meth)acrylate, Silikon(meth)acrylate, acrylierte Polyacrylate.Preferred are (meth) acrylate compounds such as polyester (meth) acrylates, polyether (meth) acrylates, urethane (meth) acrylates, epoxy (meth) acrylates, carbonate (meth) acrylates, silicone (meth) acrylates, acrylated polyacrylates.

Vorzugsweise handelt es sich bei mindestens 40 Mol-%, besonders bevorzugt bei mindestens 60 % der strahlungshärtbaren ethylenisch ungesättigten Gruppen um (Meth)acrylgruppen.Preferably, at least 40 mol%, more preferably at least 60%, of the radiation-curable ethylenically unsaturated groups are (meth) acrylic groups.

Die strahlungshärtbaren Verbindungen können weitere reaktive Gruppen, z.B. Melamin-, lsocyanat-, Epoxid-, Anhydrid-, Alkohol-, Carbonsäuregruppen für eine zusätzliche thermische Härtung, z. B. durch chemische Reaktion von Alkohol-, Carbonsäure-, Amin-, Epoxid-, Anhydrid-, Isocyanat- oder Melamingruppen, enthalten (dual cure).The radiation-curable compounds may contain other reactive groups, e.g. Melamine, isocyanate, epoxide, anhydride, alcohol, carboxylic acid groups for additional thermal cure, e.g. B. by chemical reaction of alcohol, carboxylic acid, amine, epoxy, anhydride, isocyanate or melamine groups containing (dual cure).

Die strahlungshärtbaren Verbindungen können z.B. als Lösung, z.B. in einem organischen Lösungsmittel oder Wasser, als wäßrige Dispersion, als Pulver vorliegen.The radiation-curable compounds may be e.g. as a solution, e.g. in an organic solvent or water, as an aqueous dispersion, as a powder.

Bevorzugt sind die strahlungshärtbaren Verbindungen und somit auch die strahlungshärtbaren Massen bei Raumtemperatur fließfähig. Die strahlungshärtbaren Massen enthalten vorzugsweise weniger als 20 Gew.-%, insbesondere weniger als 10 Gew.-% organische Lösemittel und/oder Wasser. Bevorzugt sind sie lösungsmittelfrei und wasserfrei (sog. 100 % Systeme). In diesem Fall kann bevorzugt auf einen Trocknungsschritt verzichtet werden.The radiation-curable compounds and thus also the radiation-curable compositions are preferably free-flowing at room temperature. The radiation-curable compositions preferably contain less than 20% by weight, in particular less than 10% by weight, of organic solvents and / or water. They are preferably solvent-free and anhydrous (so-called 100% systems). In this case, it is preferable to dispense with a drying step.

Die strahlungshärtbaren Massen können neben den strahlungshärtbaren Verbindungen als Bindemittel weitere Bestandteile enthalten. In Betracht kommen z.B. Pigmente, Verlaufsmittel, Farbstoffe, Stabilisatoren etc.The radiation-curable compositions may contain other constituents in addition to the radiation-curable compounds as a binder. Consider, for example, Pigments, leveling agents, dyes, stabilizers etc.

Für die Härtung mit UV-Licht werden im allgemeinen Photoinitiatoren verwendet.For curing with UV light, photoinitiators are generally used.

Als Photoinitiatoren können dem Fachmann bekannte Photoinitiatoren verwendet werden, z.B. solche in " Advances in Polymer Science", Volume 14, Springer Berlin 1974 oder in K. K. Dietliker, Chemistry and Technology of UV- and EB-Formulation for Coatings, Inks and Paints, Volume 3; Photoinitiators for Free Radical and Cationic Polymerization, P. K. T. Oldring (Eds), SITA Technology Ltd, Lond on, genannten.Photoinitiators known to the person skilled in the art as photoinitiators can be used, for example those in " Advances in Polymer Science ", Volume 14, Springer Berlin 1974 or in KK Dietliker, Chemistry and Technology of UV and EB Formulation for Coatings, Inks and Paints, Volume 3; Photoinitiators for Free Radical and Cationic Polymerization, PKT Oldring (Eds), SITA Technology Ltd, London on, mentioned.

In Betracht kommen beispielsweise Phosphinoxide, Benzophenone, α-Hydroxy-alkyl-aryl-ketone, Thioxanthone, Anthrachinone, Acetophenone, Benzoine und Benzoinether, Ketale, Imidazole oder Phenylglyoxylsäuren.Suitable examples are phosphine oxides, benzophenones, α-hydroxy-alkyl-aryl ketones, thioxanthones, anthraquinones, acetophenones, benzoins and benzoin ethers, ketals, imidazoles or phenylglyoxylic acids.

Phosphinoxide sind beispielsweise Mono- oder Bisacylphosphinoxide, wie z.B. Irgacure® 819 (Bis(2,4,6-Trimethylbenzoyl)phenylphosphinoxid), wie sie z.B. in EP-A 7 508 , EP-A 57 474 , DE-A 19618 720 , EP-A 495 751 oder EP-A 615 980 beschrieben sind, beispielsweise 2,4,6-Trimethylbenzoyldiphenylphosphinoxid (Lucirin® TPO), Ethyl-2,4,6-trimethylbenzoylphenylphosphinat, Bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphinoxid,Phosphine oxides are, for example, mono- or bisacylphosphine oxides, such as, for example, Irgacure® 819 (bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide), as described, for example, in US Pat EP-A 7 508 . EP-A 57 474 . DE-A 19618 720 . EP-A 495 751 or EP-A 615 980 are described, for example, 2,4,6-trimethylbenzoyldiphenylphosphine oxide (Lucirin ® TPO), ethyl 2,4,6-trimethylbenzoylphenylphosphinate, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentyl,

Benzophenone sind beispielsweise Benzophenon, 4-Aminobenzophenon, 4,4'-Bis(dimethylamino)benzophenon, 4-Phenylbenzophenon, 4-Chlorbenzophenon, Michlers Keton, o-Methoxybenzophenon, 2,4,6-Trimethylbenzophenon, 4-Methylbenzophenon, 2,4-Dimethylbenzophenon, 4-Isopropylbenzophenon, 2-Chlorbenzophenon, 2,2'-Dichlorbenzophenon, 4-Methoxybenzophenon, 4-Propoxybenzophenon oder 4-ButoxybenzophenonBenzophenones are, for example, benzophenone, 4-aminobenzophenone, 4,4'-bis (dimethylamino) benzophenone, 4-phenylbenzophenone, 4-chlorobenzophenone, Michler's ketone, o-methoxybenzophenone, 2,4,6-trimethylbenzophenone, 4-methylbenzophenone, 2,4 Dimethylbenzophenone, 4-isopropylbenzophenone, 2-chlorobenzophenone, 2,2'-dichlorobenzophenone, 4-methoxybenzophenone, 4-propoxybenzophenone or 4-butoxybenzophenone

α-Hydroxy-alkyl-aryl-ketone sind beispielsweise 1-Benzoylcyclohexan-1-ol (1-Hydroxy-cyclohexyl-phenylketon), 2-Hydroxy-2,2-dimethylacetophenon (2-Hydroxy-2-methyl-1-phenyl-propan-1-on), 1-Hydroxyacetophenon, 1-[4-(2-Hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-on, Polymeres, das 2-Hydroxy-2-methyl-1-(4-isopropen-2-yl-phenyl)-propan-1-on einpolymerisiert enthält (Esacure® KIP 150)Examples of α-hydroxyalkyl-aryl ketones are 1-benzoylcyclohexan-1-ol (1-hydroxycyclohexyl-phenylketone), 2-hydroxy-2,2-dimethylacetophenone (2-hydroxy-2-methyl-1-phenyl) propan-1-one), 1-hydroxyacetophenone, 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1-propan-1-one, polymer containing 2-hydroxy-2- contains methyl-1- (4-isopropen-2-yl-phenyl) -propan-1-one in copolymerized form (Esacure® KIP 150)

Xanthone und Thioxanthone sind beispielsweise 10-Thioxanthenon, Thioxanthen-9-on, Xanthen-9-on, 2,4-Dimethylthioxanthon, 2,4-Diethylthioxanthon, 2,4-Di-isopropylthioxanthon, 2,4-Dichlorthioxanthon, Chloroxanthenon,Xanthones and thioxanthones are, for example, 10-thioxanthenone, thioxanthen-9-one, xanthen-9-one, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, 2,4-dichlorothioxanthone, chloroxanthenone,

Anthrachinone sind beispielsweise β-Methylanthrachinon, tert-Butylanthrachinon, Anthrachinoncarbonylsäureester, Benz[de]anthracen-7-on, Benz[a]anthracen-7,12-dion, 2-Methylanthrachinon, 2-Ethylanthrachinon, 2-tert-Butylanthrachinon, 1-Chloranthrachinon, 2-AmylanthrachinonAnthraquinones are, for example, β-methylanthraquinone, tert- butylanthraquinone, anthraquinonecarbonyl acid ester, benz [de] anthracen-7-one, benz [a] anthracene-7,12-dione, 2-methylanthraquinone, 2-ethylanthraquinone, 2- tert- butylanthraquinone, 1 Chloroanthraquinone, 2-Amylanthraquinone

Acetophenone sind beispielsweise Acetophenon, Acetonaphthochinon, Valerophenon, Hexanophenon, α-Phenylbutyrophenon, p-Morpholinopropiophenon, Dibenzosuberon, 4-Morpholinobenzophenon, p-Diacetylbenzol, 4'-Methoxyacetophenon, α-Tetralon, 9-Acetylphenanthren, 2-Acetylphenanthren, 3-Acetylphenanthren, 3-Acetyllndol, 9-Fluorenon, 1-Indanon, 1,3,4-Triacetylbenzol, 1-Acetonaphthon, 2-Acetonaphthon, 2,2-Dimethoxy-2-phenylacetophenon, 2,2-Diethoxy-2-phenylacetophenon, 1,1-Dichloracetophenon, 1-Hydroxyacetophenon, 2,2-Diethoxyacetophenon, 2-Methyl-1-[4-(methylthio)phenyl]-2-morpholinopropan-1-on, 2,2-Dimethoxy-1,2-diphenylethan-2-on, 2-Benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-onAcetophenones are, for example, acetophenone, acetonaphthoquinone, valerophenone, hexanophenone, α-phenylbutyrophenone, p-morpholinopropiophenone, dibenzosuberone, 4-morpholinobenzophenone, p-diacetylbenzene, 4'-methoxyacetophenone, α-tetralone, 9-acetylphenanthrene, 2-acetylphenanthrene, 3-acetylphenanthrene, 3-acetyllndole, 9-fluorenone, 1-indanone, 1,3,4-triacetylbenzene, 1-acetonaphthone, 2-acetonaphthone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, 1, 1-dichloroacetophenone, 1-hydroxyacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one, 2,2-dimethoxy-1,2-diphenylethane-2 -on, 2-Benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one

Benzoine und Benzoinether sind beispielsweise 4-Morpholinodeoxybenzoin, Benzoin, Benzoin-iso-butylether, Benzoin-tetrahydropyranylether, Benzoin-methylether, Benzoin-ethylether, Benzoin-butylether, Benzoin-iso-propylether, 7-H-Benzoin-methylether,Benzoins and benzoin ethers are, for example, 4-morpholinodeoxybenzoin, benzoin, benzoin isobutyl ether, benzoin tetrahydropyranyl ether, benzoin methyl ether, benzoin ethyl ether, benzoin butyl ether, benzoin isopropyl ether, 7-H-benzoin methyl ether,

Ketale sind beispielsweise Acetophenondimethylketal, 2,2-Diethoxyacetophenon, Benzilketale, wie Benzildimethylketal,Ketals are, for example, acetophenone dimethyl ketal, 2,2-diethoxyacetophenone, benzil ketals, such as benzil dimethyl ketal,

Phenylglyoxylsäuren wie in DE-A 198 26 712 , DE-A 199 13 353 oder WO 98/33761 beschrieben oder sonstige Photoinitiatoren, wie z.B. Benzaldehyd, Methylethylketon, 1-Naphthaldehyd, Triphenylphosphin, Tri-o-Tolylphosphin, 2,3-Butandion oder deren Gemische, wie beispielsweise
2-Hydroxy-2-Methyl-1-phenyl-propan-2-on und 1-Hydroxy-cyclohexyl-phenylketon, Bls(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphinoxld und 2-Hydroxy-2-methyl-1-phenyl-propan-1-on
Benzophenon und 1-Hydroxy-cyclohexyl-phenylketon,
Bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphinoxid und 1-Hydroxy-cyclohexyl-phenylketon,
2,4,6-Trimethylbenzoyldiphenylphosphinoxid und 2-Hydroxy-2-methyl-1-phenyl-propan-1-on,
2,4,6-Trimethylbenzophenon und 4-Methylbenzophenon,
2,4,6-Trimethylbenzophenon und 4-Methylbenzophenon und 2,4,6-Trimethylbenzoyldiphenylphosphinoxld,
Phenylglyoxylic acids as in DE-A 198 26 712 . DE-A 199 13 353 or WO 98/33761 described or other photoinitiators, such as benzaldehyde, methyl ethyl ketone, 1-naphthaldehyde, triphenylphosphine, tri-o-tolylphosphine, 2,3-butanedione or mixtures thereof, such as
2-hydroxy-2-methyl-1-phenylpropan-2-one and 1-hydroxycyclohexyl phenyl ketone, Bls (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide and 2-hydroxy-2-methyl -1-phenyl-propan-1-one
Benzophenone and 1-hydroxycyclohexyl phenyl ketone,
Bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide and 1-hydroxycyclohexyl phenyl ketone,
2,4,6-trimethylbenzoyldiphenylphosphine oxide and 2-hydroxy-2-methyl-1-phenyl-propan-1-one,
2,4,6-trimethylbenzophenone and 4-methylbenzophenone,
2,4,6-trimethylbenzophenone and 4-methylbenzophenone and 2,4,6-trimethylbenzoyldiphenylphosphine oxide,

Es ist ein Vorteil der Erfindung, daß der Gehalt der Photoinitiatoren in der strahlungshärtbaren Masse gering sein kann.It is an advantage of the invention that the content of the photoinitiators in the radiation-curable composition can be low.

Vorzugsweise enthalten die strahlungshärtbaren Massen weniger als 10 Gew.-Teile, insbesondere weniger als 4 Gew.-Teile, besonders bevorzugt weniger als 1,5 Gew.-Teile Photoinitiator auf 100 Gew.-Teile strahlungshärtbare Verbindungen.Preferably, the radiation-curable compositions contain less than 10 parts by weight, in particular less than 4 parts by weight, more preferably less than 1.5 parts by weight of photoinitiator per 100 parts by weight of radiation-curable compounds.

Ausreichend ist insbesondere eine Menge von 0 Gew.-Teilen bis 1,5 Gew.-Teilen, insbesondere 0,01 bis 1 Gew.-Teil Photoinitiator.Sufficient is in particular an amount of 0 parts by weight to 1.5 parts by weight, in particular 0.01 to 1 part by weight of photoinitiator.

Die strahlungshärtbare Masse kann nach üblichen Verfahren auf das zu beschichtende Substrat aufgebracht werden oder in die entsprechende Form gebracht werden.The radiation-curable composition can be applied by conventional methods to the substrate to be coated or brought into the appropriate form.

Die Strahlungshärtung kann dann erfolgen, sobald das Substrat von dem Schutzgas umgeben ist.The radiation curing can then take place as soon as the substrate is surrounded by the protective gas.

Das erfindungsgemäße Verfahren eignet sich zur Herstellung von Beschichtungen auf Substraten und zur Herstellung von Formkörpern.The inventive method is suitable for the production of coatings on substrates and for the production of moldings.

Geeignete Substrate sind beispielsweise Holz, Papier, Textil, Leder, Vlies, Kunststoffoberflächen, Glas, Keramik, mineralische Baustoffe, wie Zement-Formsteine und Faserzementplatten, oder Metalle oder beschichtete Metalle, bevorzugt Kunststoffe oder Metalle, die beispielsweise auch als Folien vorliegen können.Suitable substrates are, for example, wood, paper, textile, leather, fleece, plastic surfaces, glass, ceramics, mineral building materials, such as cement blocks and fiber cement boards, or metals or coated metals, preferably plastics or metals, which may for example also be present as films.

Kunststoffe sind beispielsweise thermoplastische Polymere, insbesondere Polymethylmethacrylate, Polybutylmethacrylate, Polyethylenterephthalate, Polybutylenterephthalate, Polyvinylidenflouride, Polyvinylchloride, Polyester, Polyolefine, Acrylnitrilethylenpropylendienstyrolcopolymere (A-EPDM), Polyetherimide, Polyetherketone, Polyphenylensulfide, Polyphenylenether oder deren Mischungen.Plastics are, for example, thermoplastic polymers, in particular polymethyl methacrylates, polybutyl methacrylates, polyethylene terephthalates, polybutylene terephthalates, polyvinylidene fluorides, polyvinyl chlorides, polyesters, polyolefins, acrylonitrile ethylene propylene-diene copolymers (A-EPDM), polyetherimides, polyether ketones, polyphenylene sulfides, polyphenylene ethers or mixtures thereof.

Weiterhin genannt seien Polyethylen, Polypropylen, Polystyrol, Polybutadien, Polyester, Polyamide, Polyether, Polycarbonat, Polyvinylacetal, Polyacrylnitril, Polyacetal, Polyvinylalkohol, Polyvinylacetat, Phenolharze, Harnstoffharze, Melaminharze, Alkydharze, Epoxidharze oder Polyurethane, deren Block- oder Pfropfcopolymere und Blends davon.Also mentioned are polyethylene, polypropylene, polystyrene, polybutadiene, polyesters, polyamides, polyethers, polycarbonate, polyvinyl acetal, polyacrylonitrile, polyacetal, polyvinyl alcohol, polyvinyl acetate, phenolic resins, urea resins, melamine resins, alkyd resins, epoxy resins or polyurethanes, their block or graft copolymers and blends thereof.

Bevorzugt als Kunststoffe genannt seien ABS, AES, AMMA, ASA, EP, EPS, EVA, E-VAL, HDPE, LDPE, MABS, MBS, MF, PA, PA6, PA66, PAN, PB, PBT, PBTP, PC, PE, PEC, PEEK, PEI, PEK, PEP, PES, PET, PETP, PF, PI, PIB, PMMA, POM, PP, PPS, PS, PSU, PUR, PVAC, PVAL, PVC, PVDC, PVP, SAN, SB, SMS, UF, UP-Kunststoffe (Kurzzeichen gemäß DIN 7728) und aliphatische Polyketone.Preferred plastics include ABS, AES, AMMA, ASA, EP, EPS, EVA, E-VAL, HDPE, LDPE, MABS, MBS, MF, PA, PA6, PA66, PAN, PB, PBT, PBTP, PC, PE , PEC, PEEK, PEI, PEK, PEP, PES, PET, PETP, PF, PI, PIB, PMMA, POM, PP, PPS, PS, PSU, PUR, PVAC, PVAL, PVC, PVDC, PVP, SAN, SB, SMS, UF, UP plastics (abbreviated to DIN 7728) and aliphatic polyketones.

Besonders bevorzugte Kunststoffe als Substrate sind Polyolefine, wie z.B. PP(Polypropylen), das wahlweise isotaktisch, syndiotaktisch oder ataktisch und wahlweise nicht-orientiert oder durch uni- oder bisaxiales Recken orientiert sein kann, SAN (Styrol-Acrylnitril-Copolymere), PC (Polycarbonate), PMMA (Polymethylmethacrylate), PBT (Poly(butylenterephthalat)e), PA (Polyamide), ASA (Acryinitril-Styroi-Acrylester-Copolymere) und ABS (Acrylnitril-Butadien-Styrol-Copolymere), sowie deren physikalische Mischungen (Blends). Besonders bevorzugt sind PP, SAN, ABS, ASA sowie Blends von ABS oder ASA mit PA oder PBT oder PC.Particularly preferred plastics as substrates are polyolefins, e.g. PP (polypropylene) which may optionally be isotactic, syndiotactic or atactic and optionally non-oriented or oriented by uni- or bis-axial stretching, SAN (styrene-acrylonitrile copolymers), PC (polycarbonates), PMMA (polymethyl methacrylates), PBT (poly (Butylene terephthalate) e), PA (polyamides), ASA (acrylonitrile-Styroi-acrylic ester copolymers) and ABS (acrylonitrile-butadiene-styrene copolymers), as well as their physical mixtures (blends). Particularly preferred are PP, SAN, ABS, ASA and blends of ABS or ASA with PA or PBT or PC.

Als Formkörper genannt seien z. B. Verbundwerkstoffe, die z. B. mit strahlungshärtbarer Masse getränkte Fasermaterialien oder Gewebe enthalten, oder Formkörper für die Stereolithographie.As molding may be mentioned z. B. composites z. B. containing radiation-curable composition impregnated fiber materials or fabric, or molded body for stereolithography.

Claims (25)

  1. Apparatus 1 for effecting a cure of coatings on a substrate S under an inert gas atmosphere, comprising
    - side covers 2, 3, 4 and 5,
    - top and bottom covers 6 and 7, with 2, 3, 4, 5, 6 and 7 together enclosing an interior,
    - one or more dividing walls 8 which subdivide the interior, the dividing walls 8 finishing at the bottom cover 7 and leaving open a distance d1 from the top cover 6,
    - one or more dividing walls 9 which subdivide the interior, the dividing walls 9 finishing at the top cover 6 and leaving open a distance d2 from the bottom cover 7,
    - with 8 and 9, together with the respectively adjacent dividing wall 9 or 8 and, if appropriate, with the side covers 2 or 3, forming a subdivided interior (compartment),
    - at least one radiation source 10 radiating within the interior and/or into the interior,
    - at least one gas supply means 11, with which a gas or gas mixture can be passed into the interior or formed therein,
    - at least one conveying means 12 for the substrate S,
    - inlet 13 and
    - outlet 14,
    where
    - the dividing walls 8 stand substantially perpendicular to the bottom cover 7,
    - the dividing walls 9 stand substantially perpendicular to the top cover 6,
    - the distances d1 and d2 and also the breadth b of apparatus 1 being chosen such that they are greater than the dimensions of the substrate S along the conveying direction of the conveying means 12, and
    - means 2, 3, 8 and 9 form at least 4 compartments.
  2. The apparatus according to claim 1, wherein the cross-sectional area through which the substrate is conveyed through the individual compartments in the apparatus are at least three times the projected cross-sectional area of the substrate in the conveying direction.
  3. The apparatus according to claim 1 or 2, wherein the number of compartments is 4 to 15.
  4. The apparatus according to claim 1 or 2, wherein the number of compartments is 6 to 8.
  5. The apparatus according to any one of the preceding claims, wherein the inert gas atmosphere is composed predominantly of nitrogen and/or carbon dioxide.
  6. The apparatus according to any one of the preceding claims, wherein the inert atmosphere has an oxygen content of below 3% by volume.
  7. The apparatus according to any one of the preceding claims, wherein the height h of a compartment is at least twice as great as the greater of the distances d1 and d2.
  8. The apparatus according to any one of the preceding claims, wherein the dividing walls 8 and 9 deviate not more than 30° from the perpendicular with the covers 7 and 6 respectively.
  9. The apparatus according to any one of the preceding claims, wherein the cross-sectional areas, as defined in claim 2, are not more than six times as great as the projected cross-sectional area of the substrate S in the conveying direction.
  10. The apparatus according to any one of the preceding claims, wherein the radiation source 10 comprises a UV wavelength λ of 200 nm to 760 nm.
  11. The apparatus according to any one of the preceding claims, wherein the radiation source 10 comprises an NIR and/or IR wavelength λ of 760 nm to 25 µm.
  12. The apparatus according to any one of the preceding claims, wherein the supply of gas via the gas supply means 11 takes place in a low-flow manner.
  13. The apparatus according to any one of the preceding claims, wherein the entry 13 is formed over at least one length f1 which is 0 to 10 times the parameters d1 or d2, depending on which of these two parameters is the greater.
  14. The apparatus according to any one of the preceding claims, wherein the exit 14 is formed over at least one length f2 which is 0 to 10 times the parameters d1 or d2, depending on which of these two parameters is the greater.
  15. The apparatus according to any one of the preceding claims, wherein entry 13 and/or exit 14 are sealed with suitable means to prevent gas fluid loss.
  16. The apparatus according to any one of the preceding claims, wherein the inert gas is heavier than air and the inert gas is supplied via a gas supply means 11 in the lower third of apparatus 1, based on its height h.
  17. The apparatus according to claim 16, wherein the inert gas is metered in via a gas supply means 11 at a temperature which is below the temperature of the inert gas atmosphere.
  18. The apparatus according to claim 16 or 17, wherein entry 13 and/or exit 14 of the apparatus are disposed in the upper half of the apparatus, based on the height h of the apparatus.
  19. The apparatus according to any one of claims 1 to 15, wherein the inert gas is lighter than air and the inert gas is supplied via a gas supply means 11 in the upper third of apparatus 1, based on its height h.
  20. The apparatus according to claim 19, wherein the inert gas is metered in via a gas supply means 11 at a temperature which is above the temperature of the inert gas atmosphere.
  21. The apparatus according to claim 19 or 20, wherein entry 13 and/or exit 14 of the apparatus are disposed in the lower half of the apparatus, based on the height h of the apparatus.
  22. The apparatus according to any one of the preceding claims, wherein the side covers 2, 3, 4 and/or 5 and also the top and bottom covers 6 and/or 7 are thermostated or insulated.
  23. A method of effecting a cure of coatings on a substrate S under an inert gas atmosphere, wherein the cure is effected in apparatus according to any one of the preceding claims.
  24. The method according to claim 23, wherein the temperature in the apparatus is at least partly 50°C or more.
  25. The use of apparatus according to any one of claims 1 to 22 for effecting a cure of coating materials on a substrate S.
EP05753770A 2004-06-24 2005-06-17 Device and process for curing using energy-rich radiation in an inert gas atmosphere Not-in-force EP1791652B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004030674A DE102004030674A1 (en) 2004-06-24 2004-06-24 Apparatus and method for curing with high-energy radiation under an inert gas atmosphere
PCT/EP2005/006549 WO2006000349A2 (en) 2004-06-24 2005-06-17 Device and process for curing using energy-rich radiation in an inert gas atmosphere

Publications (2)

Publication Number Publication Date
EP1791652A2 EP1791652A2 (en) 2007-06-06
EP1791652B1 true EP1791652B1 (en) 2010-06-16

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US (1) US7863583B2 (en)
EP (1) EP1791652B1 (en)
JP (1) JP4819803B2 (en)
KR (1) KR20070034073A (en)
CN (1) CN101304814B (en)
AT (1) ATE471218T1 (en)
BR (1) BRPI0512542A (en)
DE (2) DE102004030674A1 (en)
ES (1) ES2346068T3 (en)
WO (1) WO2006000349A2 (en)

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Also Published As

Publication number Publication date
JP4819803B2 (en) 2011-11-24
JP2008503338A (en) 2008-02-07
ES2346068T3 (en) 2010-10-08
CN101304814A (en) 2008-11-12
EP1791652A2 (en) 2007-06-06
DE102004030674A1 (en) 2006-01-19
KR20070034073A (en) 2007-03-27
CN101304814B (en) 2011-10-12
US7863583B2 (en) 2011-01-04
US20080311309A1 (en) 2008-12-18
BRPI0512542A (en) 2008-03-25
DE502005009765D1 (en) 2010-07-29
WO2006000349A3 (en) 2008-05-29
ATE471218T1 (en) 2010-07-15
WO2006000349A2 (en) 2006-01-05

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