EP1732105A3 - Substratträgervorrichtung, und Vorrichtung und Verfahren zur Substrat-Temperatursteuerung - Google Patents

Substratträgervorrichtung, und Vorrichtung und Verfahren zur Substrat-Temperatursteuerung Download PDF

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Publication number
EP1732105A3
EP1732105A3 EP06011654A EP06011654A EP1732105A3 EP 1732105 A3 EP1732105 A3 EP 1732105A3 EP 06011654 A EP06011654 A EP 06011654A EP 06011654 A EP06011654 A EP 06011654A EP 1732105 A3 EP1732105 A3 EP 1732105A3
Authority
EP
European Patent Office
Prior art keywords
supporter
substrate
liquid
liquid discharge
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06011654A
Other languages
English (en)
French (fr)
Other versions
EP1732105A2 (de
Inventor
Yutaka Akaike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of EP1732105A2 publication Critical patent/EP1732105A2/de
Publication of EP1732105A3 publication Critical patent/EP1732105A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
EP06011654A 2005-06-06 2006-06-06 Substratträgervorrichtung, und Vorrichtung und Verfahren zur Substrat-Temperatursteuerung Withdrawn EP1732105A3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005166232A JP4647401B2 (ja) 2005-06-06 2005-06-06 基板保持台、基板温度制御装置及び基板温度制御方法

Publications (2)

Publication Number Publication Date
EP1732105A2 EP1732105A2 (de) 2006-12-13
EP1732105A3 true EP1732105A3 (de) 2009-10-28

Family

ID=36617337

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06011654A Withdrawn EP1732105A3 (de) 2005-06-06 2006-06-06 Substratträgervorrichtung, und Vorrichtung und Verfahren zur Substrat-Temperatursteuerung

Country Status (6)

Country Link
US (1) US7580109B2 (de)
EP (1) EP1732105A3 (de)
JP (1) JP4647401B2 (de)
KR (1) KR100810801B1 (de)
CN (1) CN100429759C (de)
TW (1) TWI420615B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
NL1036835A1 (nl) * 2008-05-08 2009-11-11 Asml Netherlands Bv Lithographic Apparatus and Method.
NL2003258A1 (nl) * 2008-08-08 2010-02-09 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US8404572B2 (en) * 2009-02-13 2013-03-26 Taiwan Semiconductor Manufacturing Co., Ltd Multi-zone temperature control for semiconductor wafer
KR101568652B1 (ko) 2009-02-22 2015-11-12 마퍼 리쏘그라피 아이피 비.브이. 기판 지지 구조, 클램프 제조 유닛, 및 리소그래피 시스템
JP2011077452A (ja) * 2009-10-01 2011-04-14 Tokyo Electron Ltd 基板載置台の温度制御方法及び温度制御システム
TWI582894B (zh) * 2010-02-19 2017-05-11 瑪波微影Ｉｐ公司 基板支撐結構、夾持準備單元、以及微影系統
NL1038213C2 (en) * 2010-03-04 2012-10-08 Mapper Lithography Ip Bv Substrate support structure, clamp preparation unit, and lithography system.
TWI475670B (zh) * 2011-11-24 2015-03-01 Macronix Int Co Ltd 記憶元件及其製造方法
WO2014041905A1 (ja) * 2012-09-11 2014-03-20 シャープ株式会社 試験用治具、検査装置、載置装置および試験装置
JP6213824B2 (ja) * 2013-11-20 2017-10-18 株式会社リコー シート材載置装置および画像形成装置
US10898987B2 (en) * 2015-06-01 2021-01-26 Ebara Corporation Table for holding workpiece and processing apparatus with the table
KR101790617B1 (ko) 2016-02-04 2017-10-26 (주)에스엔텍 열전도 가스를 통해 샘플의 온도 조절이 가능한 증착 장치용 샘플 거치대 및 그 샘플 거치대를 갖는 증착 장치
NL2017576A (en) 2015-10-06 2017-04-11 Asml Netherlands Bv Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
CN106783669B (zh) * 2015-11-25 2019-04-12 无锡华瑛微电子技术有限公司 半导体处理装置及方法
CN107984094A (zh) * 2016-10-26 2018-05-04 深圳市裕展精密科技有限公司 切割设备及其切割方法
CN106736762A (zh) * 2017-02-15 2017-05-31 珠海格力智能装备有限公司 吸盘夹具和显示屏边框加工设备
CN110658683A (zh) * 2018-06-28 2020-01-07 上海微电子装备（集团）股份有限公司 晶片承载系统和浸没光刻设备
KR20210030074A (ko) 2019-09-09 2021-03-17 삼성전자주식회사 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치
JP7344153B2 (ja) * 2020-02-14 2023-09-13 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0511928A1 (de) * 1991-04-25 1992-11-04 International Business Machines Corporation Kühlsystem mit Flüssigkeitsfilmzwischenschicht zur Bearbeitung von Halbleiterscheiben
EP1282157A2 (de) * 2001-07-27 2003-02-05 Canon Kabushiki Kaisha Vorrichtung und Verfahren zur Reglung der Temperatur eines Substrats
US20050068736A1 (en) * 2003-09-26 2005-03-31 Tokyo Electron Limited Method and apparatus for efficient temperature control using a contact volume

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186238A (en) * 1991-04-25 1993-02-16 International Business Machines Corporation Liquid film interface cooling chuck for semiconductor wafer processing
KR100238629B1 (ko) * 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
JPH07263526A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd ウェハチャックおよび半導体素子の冷却方法
JP3356115B2 (ja) * 1999-05-20 2002-12-09 ウシオ電機株式会社 レジスト硬化装置
JP3772621B2 (ja) * 2000-02-03 2006-05-10 株式会社日鉱マテリアルズ 気相成長方法および気相成長装置
JP4012466B2 (ja) * 2001-03-28 2007-11-21 忠弘 大見 プラズマ処理装置
US6908512B2 (en) * 2002-09-20 2005-06-21 Blue29, Llc Temperature-controlled substrate holder for processing in fluids
JP4172769B2 (ja) * 2003-03-10 2008-10-29 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2004355815A (ja) * 2003-05-27 2004-12-16 Dainippon Screen Mfg Co Ltd 基板処理装置および該装置に適した熱式流量計
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0511928A1 (de) * 1991-04-25 1992-11-04 International Business Machines Corporation Kühlsystem mit Flüssigkeitsfilmzwischenschicht zur Bearbeitung von Halbleiterscheiben
EP1282157A2 (de) * 2001-07-27 2003-02-05 Canon Kabushiki Kaisha Vorrichtung und Verfahren zur Reglung der Temperatur eines Substrats
US20050068736A1 (en) * 2003-09-26 2005-03-31 Tokyo Electron Limited Method and apparatus for efficient temperature control using a contact volume

Also Published As

Publication number Publication date
TW200746339A (en) 2007-12-16
TWI420615B (zh) 2013-12-21
EP1732105A2 (de) 2006-12-13
KR20060127780A (ko) 2006-12-13
CN1877807A (zh) 2006-12-13
KR100810801B1 (ko) 2008-03-06
CN100429759C (zh) 2008-10-29
JP2006339615A (ja) 2006-12-14
US20060274298A1 (en) 2006-12-07
JP4647401B2 (ja) 2011-03-09
US7580109B2 (en) 2009-08-25

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