EP1701377A3 - Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion - Google Patents

Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion Download PDF

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Publication number
EP1701377A3
EP1701377A3 EP06115562A EP06115562A EP1701377A3 EP 1701377 A3 EP1701377 A3 EP 1701377A3 EP 06115562 A EP06115562 A EP 06115562A EP 06115562 A EP06115562 A EP 06115562A EP 1701377 A3 EP1701377 A3 EP 1701377A3
Authority
EP
European Patent Office
Prior art keywords
silicon carbide
type
implant
self
power devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP06115562A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1701377A2 (en
Inventor
Alexander V Suvorov
John W Palmour
Ranbir Singh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of EP1701377A2 publication Critical patent/EP1701377A2/en
Publication of EP1701377A3 publication Critical patent/EP1701377A3/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
EP06115562A 1998-06-08 1999-06-07 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion Ceased EP1701377A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/093,207 US6107142A (en) 1998-06-08 1998-06-08 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion
EP99928439A EP1086491A1 (en) 1998-06-08 1999-06-07 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusions

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP99928439A Division EP1086491A1 (en) 1998-06-08 1999-06-07 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusions

Publications (2)

Publication Number Publication Date
EP1701377A2 EP1701377A2 (en) 2006-09-13
EP1701377A3 true EP1701377A3 (en) 2008-08-06

Family

ID=22237747

Family Applications (2)

Application Number Title Priority Date Filing Date
EP06115562A Ceased EP1701377A3 (en) 1998-06-08 1999-06-07 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion
EP99928439A Withdrawn EP1086491A1 (en) 1998-06-08 1999-06-07 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusions

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP99928439A Withdrawn EP1086491A1 (en) 1998-06-08 1999-06-07 Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusions

Country Status (8)

Country Link
US (1) US6107142A (cg-RX-API-DMAC7.html)
EP (2) EP1701377A3 (cg-RX-API-DMAC7.html)
JP (2) JP5184724B2 (cg-RX-API-DMAC7.html)
KR (1) KR100596061B1 (cg-RX-API-DMAC7.html)
CN (1) CN1155066C (cg-RX-API-DMAC7.html)
AU (1) AU4550399A (cg-RX-API-DMAC7.html)
CA (1) CA2333579C (cg-RX-API-DMAC7.html)
WO (1) WO1999065073A1 (cg-RX-API-DMAC7.html)

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JP3988262B2 (ja) * 1998-07-24 2007-10-10 富士電機デバイステクノロジー株式会社 縦型超接合半導体素子およびその製造方法
US6972436B2 (en) * 1998-08-28 2005-12-06 Cree, Inc. High voltage, high temperature capacitor and interconnection structures
EP1058303A1 (en) * 1999-05-31 2000-12-06 STMicroelectronics S.r.l. Fabrication of VDMOS structure with reduced parasitic effects
US6504176B2 (en) * 2000-04-06 2003-01-07 Matshushita Electric Industrial Co., Ltd. Field effect transistor and method of manufacturing the same
US6429041B1 (en) 2000-07-13 2002-08-06 Cree, Inc. Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation
US7067176B2 (en) 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US6767843B2 (en) 2000-10-03 2004-07-27 Cree, Inc. Method of N2O growth of an oxide layer on a silicon carbide layer
US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US6610366B2 (en) 2000-10-03 2003-08-26 Cree, Inc. Method of N2O annealing an oxide layer on a silicon carbide layer
KR100393201B1 (ko) * 2001-04-16 2003-07-31 페어차일드코리아반도체 주식회사 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터
US6507046B2 (en) 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
JP3939195B2 (ja) * 2002-05-13 2007-07-04 ローム株式会社 半導体装置の製造方法および半導体装置
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7118970B2 (en) * 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US7727904B2 (en) * 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
CN101501859B (zh) 2006-08-17 2011-05-25 克里公司 高功率绝缘栅双极晶体管
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
JP4442698B2 (ja) * 2007-07-25 2010-03-31 三菱電機株式会社 炭化珪素半導体装置の製造方法
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8796809B2 (en) * 2008-09-08 2014-08-05 Cree, Inc. Varactor diode with doped voltage blocking layer
US7829402B2 (en) * 2009-02-10 2010-11-09 General Electric Company MOSFET devices and methods of making
US8288220B2 (en) * 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
DE102011002468A1 (de) 2011-01-05 2012-07-05 Robert Bosch Gmbh Verfahren zur Herstellung einer Siliziumkarbid-Halbleiterstruktur sowie eine verfahrensgemäß hergestellte Halbleiterstruktur
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9984894B2 (en) 2011-08-03 2018-05-29 Cree, Inc. Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8941188B2 (en) * 2012-03-26 2015-01-27 Infineon Technologies Austria Ag Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
US9018048B2 (en) * 2012-09-27 2015-04-28 Stmicroelectronics S.R.L. Process for manufactuirng super-barrier rectifiers
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US9768259B2 (en) 2013-07-26 2017-09-19 Cree, Inc. Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
JP6206012B2 (ja) * 2013-09-06 2017-10-04 住友電気工業株式会社 炭化珪素半導体装置
US9673315B2 (en) 2015-03-24 2017-06-06 Kabushiki Kaisha Toshiba Semiconductor device, inverter circuit, driving device, vehicle, and elevator
KR102704347B1 (ko) * 2016-10-14 2024-09-06 한국전기연구원 SiC 금속 산화물 반도체 소자의 제조 방법
JP6988216B2 (ja) 2017-07-12 2022-01-05 富士電機株式会社 半導体装置の製造方法
JP7058337B2 (ja) * 2018-02-28 2022-04-21 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト Ａｌ／Ｂｅ共注入により炭化ケイ素をｐ型ドーピングする方法
JP6862381B2 (ja) 2018-03-02 2021-04-21 株式会社東芝 半導体装置
US10636660B2 (en) 2018-09-28 2020-04-28 General Electric Company Super-junction semiconductor device fabrication

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US5242841A (en) * 1992-03-25 1993-09-07 Texas Instruments Incorporated Method of making LDMOS transistor with self-aligned source/backgate and photo-aligned gate
US5444002A (en) * 1993-12-22 1995-08-22 United Microelectronics Corp. Method of fabricating a short-channel DMOS transistor with removable sidewall spacers
US5510281A (en) * 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
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US5242841A (en) * 1992-03-25 1993-09-07 Texas Instruments Incorporated Method of making LDMOS transistor with self-aligned source/backgate and photo-aligned gate
US5444002A (en) * 1993-12-22 1995-08-22 United Microelectronics Corp. Method of fabricating a short-channel DMOS transistor with removable sidewall spacers
US5510281A (en) * 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
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Also Published As

Publication number Publication date
CN1304551A (zh) 2001-07-18
JP5295274B2 (ja) 2013-09-18
CA2333579C (en) 2009-09-08
EP1086491A1 (en) 2001-03-28
JP2011097093A (ja) 2011-05-12
AU4550399A (en) 1999-12-30
CA2333579A1 (en) 1999-12-16
KR20010052492A (ko) 2001-06-25
KR100596061B1 (ko) 2006-07-03
US6107142A (en) 2000-08-22
WO1999065073A1 (en) 1999-12-16
JP2002518828A (ja) 2002-06-25
JP5184724B2 (ja) 2013-04-17
EP1701377A2 (en) 2006-09-13
CN1155066C (zh) 2004-06-23

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