EP1677155B1 - System und Verfahren zur Fehlermarkierung auf einem Substrat bei maskenlosen Anwendungen - Google Patents

System und Verfahren zur Fehlermarkierung auf einem Substrat bei maskenlosen Anwendungen Download PDF

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Publication number
EP1677155B1
EP1677155B1 EP05257757A EP05257757A EP1677155B1 EP 1677155 B1 EP1677155 B1 EP 1677155B1 EP 05257757 A EP05257757 A EP 05257757A EP 05257757 A EP05257757 A EP 05257757A EP 1677155 B1 EP1677155 B1 EP 1677155B1
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Prior art keywords
substrate
data
suspicious bit
pattern
suspicious
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EP05257757A
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English (en)
French (fr)
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EP1677155A1 (de
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Martinus Hendricus Hendricus Hoeks
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ASML Netherlands BV
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ASML Netherlands BV
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns

Definitions

  • the present invention is directed to a light patterning device and a method of using the same.
  • a patterning device is used to pattern incoming light.
  • a static patterning device can include reticles or masks.
  • a dynamic patterning device can include an array of individually controllable elements that generate a pattern through receipt of analog or digital signals. The analog or digital signals are transmitted through a data path.
  • the algorithm used to control the dynamic patterning device, so that its individually controllable elements are in a proper state to form a desired pattern is called a rasterization algorithm or optical rasterization algorithm.
  • Example environments for use of the patterning device can be, but are not limited to, a lithographic apparatus, a projector, a projection display apparatus, or the like.
  • US 6,717,097 discloses a datapath for a pattern generator in which data is transferred with a checksum and an error flag is raised if the checksum is wrong; when an error condition is raised pattern writing is suspended.
  • a method for indicating fault on a substrate comprising:
  • FIG. 1 depicts an exemplary lithographic apparatus, in accordance with an embodiment of the present invention.
  • FIG. 2 depicts an exemplary control module, in accordance with an embodiment of the present invention.
  • FIG. 3 illustrates a flowchart of a method, in accordance with an embodiment of the present invention.
  • lithographic apparatus in the manufacture of integrated circuits (ICs)
  • ICs integrated circuits
  • the lithographic apparatus described herein can have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, thin-film magnetic heads, micro and macro fluidic devices, etc.
  • a method and system of the present invention can be used to determine if a suspicious bit in a data path has lead to an error in an exposed pattern on a substrate.
  • Example advantages of aspects of the present invention include higher yield at the customer, easier diagnosis, and higher customer confidence in the data path.
  • subsection II describes an exemplary lithographic apparatus, in accordance with an embodiment of the present invention.
  • Subsection IV describes an exemplary method, in accordance with an embodiment of the present invention.
  • Subsection V includes a discussion of example advantages of embodiments of the present invention.
  • the use of the terms "wafer” or “die” herein can be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
  • the substrate referred to herein can be processed, before or after exposure, in, for example, a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein can be applied to such and other substrate processing tools. Further, the substrate can be processed more than once, for example in order to create a multilayer IC, so that the term substrate used herein can also refer to a substrate that already contains multiple processed layers.
  • UV radiation e.g. having a wavelength of 365, 248, 193, 157 or 126 nm
  • EUV extreme ultraviolet
  • array of individually controllable elements should be broadly interpreted as referring to any device that can be used to endow an incoming radiation beam with a patterned cross-section, so that a desired pattern can be created in a target portion of the substrate.
  • the terms “light valve” and “Spatial Light Modulator” (SLM) can also be used in this context. Examples of such patterning devices are discussed below.
  • projection system used herein should be broadly interpreted as encompassing various types of projection systems, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate, for example, for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein can be considered as synonymous with the more general term “projection system.”
  • Figure 1 schematically depicts a lithographic projection apparatus 100 according to an embodiment of the present invention.
  • Apparatus 100 includes a radiation system 102, a pattern generator 104, a projection system 108 ("lens"), and an object table 106 (e.g., a substrate table).
  • An overview of the operation of lithographic apparatus 100 follows. Then alternative embodiments of lithographic apparatus 100 are discussed. After the overview and alternative embodiments of lithographic apparatus 100, details and alternative embodiments of each of the elements in apparatus 100 are described.
  • Radiation system 102 can be used for supplying a beam 110 of radiation (e.g., UV radiation).
  • radiation system 102 also comprises a radiation source 112.
  • Beam 110 subsequently intercepts the pattern generator 104 after being directed using beam splitter 118.
  • Pattern generator 104 e.g., a programmable mirror array
  • beam 110 passes through projection system 108, which focuses beam 110 onto a target portion 120 of a substrate 114.
  • Substrate 114 is supported by object table 106, which is described in more detail below.
  • lithographic apparatus 100 can be of a type having two (e.g., dual stage) or more substrate tables (and/or two or more mask tables).
  • additional tables can be used in parallel, or preparatory steps can be carried out on one or more tables while one or more other tables are being used for exposure.
  • Lithographic apparatus 100 can also be of a type wherein the substrate is immersed in a liquid (not shown) having a relatively high refractive index (e.g., water), so as to fill a space between the final element of the projection system and the substrate.
  • Immersion liquids can also be applied to other spaces in the lithographic apparatus, for example, between the substrate and the first element of the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
  • lithographic apparatus 100 can be provided with a fluid processing cell to allow interactions between a fluid and irradiated parts of the substrate (e.g., to selectively attach chemicals to the substrate or to selectively modify the surface structure of the substrate).
  • lithography apparatus 100 is herein described as being for exposing a resist on a substrate, it will be appreciated that the invention is not limited to this use and apparatus 100 can be used to project a patterned beam 110 for use in resistless lithography.
  • Radiation system 102 can include a source 112, a conditioning device 126, and an illumination source (illuminator) 124.
  • illuminator 124 will generally include various other components, such as an integrator 130 and a condenser 132.
  • Source 112 can produce a beam of radiation 122.
  • Beam 122 is fed into illumination source (illuminator) 124, either directly or after having traversed conditioning device 126, such as a beam expander, for example.
  • Adjusting device 128 can be used for setting the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -inner, respectively) of the intensity distribution in beam 122. In this way, beam 110 impinging on the pattern generator 104 has a desired uniformity and intensity distribution in its cross section.
  • source 112 can be within the housing of lithographic projection apparatus 100 (as is often the case when source 112 is a mercury lamp, for example). In alternative embodiments, source 112 can also be remote from lithographic projection apparatus 100. In this case, radiation beam 122 would be directed into apparatus 100 (e.g., with the aid of suitable directing mirrors). This latter scenario is often the case when source 112 is an excimer laser. It is to be appreciated that both of these scenarios are contemplated within the scope of the present invention.
  • the illumination source can also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the beam of radiation, and such components can also be referred to below, collectively or singularly, as a "lens.”
  • Pattern generator 104 includes SLMs that can be regarded as replacing a conventional reticle.
  • pattern generator 104 may comprise driving electronics for the SLM pixels and a data path.
  • Input image data is transformed into a suitable format and fed to the SLM by control module 150 (described in more detail below), via the data path.
  • the drive electronics addresses each SLM pixel in sequence as the SLM pattern is updated, i.e., each new SLM image frame can be loaded by normal matrix addressing.
  • the frame rate i.e., the time required to load each new frame onto the SLM, is a determining factor on apparatus throughput.
  • MSA multiple SLM array
  • the pixels from different SLMs of the MSA are "stitched" together to form a cohesive image on the substrate. This can be done using motion control and gray scaling techniques.
  • a reference to an SLM can also be interpreted as including an MSA.
  • pattern generator 104 can be fixed relative to projection system 108.
  • pattern generator 104 can be connected to a positioning device (not shown) for accurately positioning it with respect to projection system 108.
  • pattern generator 104 is of a reflective type, e.g., a programmable mirror array.
  • a filter can filter out the diffracted light, leaving the undiffracted light to reach the substrate.
  • An array of diffractive optical micro electrical mechanical system (MEMS) devices can also be used in a corresponding manner.
  • Each diffractive optical MEMS device can include a plurality of reflective ribbons that can be deformed relative to one another to form a grating that reflects incident light as diffracted light.
  • a further alternative embodiment can include a programmable mirror array employing a matrix arrangement of tiny mirrors, each of which can be individually tilted about an axis by applying a suitable localized electric field, or by employing piezoelectric actuation means.
  • the mirrors are matrix-addressable, such that addressed mirrors will reflect an incoming radiation beam in a different direction to unaddressed mirrors; in this manner, the reflected beam is patterned according to the addressing pattern of the matrix-addressable mirrors.
  • the required matrix addressing can be performed using suitable electronic means.
  • the array of individually controllable elements can comprise one or more programmable mirror arrays.
  • mirror arrays as here referred to can be gleaned, for example, from United States Patents 5,296,891 and 5,523,193 , and PCT patent applications WO 98/38597 and WO 98/33096 .
  • a programmable LCD array can also be used. An example of such a construction is given in United States Patent 5,229,872 .
  • Examples of other types of pattern generators can include, but are not limited to, tilting reflective devices, pistoning reflective devices, graytoning transmissive devices and graytoning reflective devices
  • Control module 150 comprises the data path, and will typically include a storing device for storing a "mask file” and a rasterizer.
  • the storing device contains the entire image to be printed on the substrate.
  • the rasterizer converts appropriate portions of the image for loading on to the SLM into a bit map of SLM pixel values representing the pattern required to transfer the desired image to the substrate.
  • Control module 150 will typically also comprise one or more frame buffers and other conventional components necessary for matrix addressing of the SLM each time a new SLM frame is loaded. Appropriate image digitization and SLM drive electronics will become apparent to one of skill in the relevant art. For instance, control module 150 can be very similar to a bit map based mask-writer, but with appropriate matrix addressing drive circuitry for addressing individual SLM pixels of the particular type of SLM used.
  • control module 150 supplies data to pattern generator 104 that controls the actuation state (e.g., voltage or tilt angle) of the individual SLMs of pattern generator 104.
  • the ability to deliver data at a sufficiently high rate is therefore an important consideration in attaining desired substrate scan speeds (described below), and thus production rates.
  • FPD flat panel display
  • the apparatus typically operates in pulse scan mode with lasers pulsing at 50KHz with 10/20 nsec pulse duration.
  • the high frequency is used to provide acceptable throughput because of the large substrate areas that must be scanned to produce FPDs.
  • To load an SLM frame between pulses at this frequency can require data transfer rates of the order of about 10 to 100 Gpixels/sec or more. Very complicated and expensive data handling and driver systems are required to handle such high data transfer rates.
  • the chance of data errors occurring is proportionately non-negligible.
  • data transfer requirement is to be understood to mean the amount of data that must be transferred to the SLM for updating the image frame.
  • FIG. 2 depicts an exemplary embodiment of control module 150.
  • control module 150 includes an input device (optional) 208, a detector 204, a memory 202 (optional), and a rasterizer 206.
  • Input device 208 can be used to input an error criterion.
  • input device 208 can include a user interface so that a system operator can define an error criterion.
  • detector 204 receives and checks if the the error criterion is met to determine if the data includes one or more suspicious bits, i.e., a bit or a combination of bits that may potentially lead to an error in an exposed image.
  • Typical mechanisms to implement detectors for bit errors in a data stream or block of data can include, but are not limited to, a cyclic redundancy check (CRC), a check sum or a parity bit.
  • CRC cyclic redundancy check
  • a suspicious bit in the data path does not necessarily correspond with an error occurring in an exposed image. That is, inspection of the exposed image (assisted by the printed markers) could prove that the suspicious bit was not severe and did not deteriorate the projected image to an unacceptable level. If a suspicious bit is detected, detector 204 can be used to generate suspicious bit information.
  • Memory 202 can be used to store suspicious bit information. However, information about the suspicious bits need not be stored in memory. That is, the suspicious bit information can be associated as meta-information with the data, for example, and sent straight to rasterizer 206.
  • Rasterizer 206 sends the data and the suspicious bit information to pattern generator 104.
  • the data and suspicious bit information are used to control the individually controllable elements of pattern generator 104.
  • the data can correspond with a pattern to be projected onto substrate 114 and the suspicious bit information can correspond with one or more markers that are projected on substrate 114 to indicate potential errors in a pattern exposed thereon.
  • FIG. 2 is shown for illustrative purposes, and not limitation.
  • detector 204 and rasterizer 206 could be arranged differently in control module 150.
  • detector 204 and rasterizer 206 can work serially (as shown in FIG. 2), contemporaneously, or in some combination thereof. It is to be appreciated that these alternative embodiments are contemplated within the scope of the present invention.
  • Projection system 108 e.g., a quartz and/or CaF2 lens system or a catadioptric system comprising lens elements made from such materials, or a mirror system
  • a target portion 120 e.g., one or more dies
  • Projection system 108 can project an image of the pattern generator 104 onto substrate 114.
  • projection system 108 can project images of secondary sources for which the elements of the pattern generator 104 act as shutters.
  • Projection system 108 can also comprise a micro lens array (MLA) to form the secondary sources and to project microspots onto substrate 114.
  • MLA micro lens array
  • Object table 106 can be provided with a substrate holder (not specifically shown) for holding a substrate 114 (e.g., a resist coated silicon wafer, a projection system display, a semiconductor substrate, a glass substrate, a polymer substrate or a projection television display device).
  • a substrate 114 e.g., a resist coated silicon wafer, a projection system display, a semiconductor substrate, a glass substrate, a polymer substrate or a projection television display device.
  • object table 106 can be connected to a positioning device 116 for accurately positioning substrate 114 with respect to projection system 108.
  • object table 106 can be moved accurately, so as to position different target portions 120 in the path of beam 110.
  • the positioning device for the pattern generator 104 can be used to accurately correct the position of the pattern generator 104 with respect to the path of beam 110, e.g., during a scan.
  • movement of object table 106 is realized with the aid of a long-stroke module (course positioning) and a short-stroke module (fine positioning), that are not explicitly depicted in Figure 1.
  • a similar system can also be used to position pattern generator 104.
  • beam 110 can alternatively/additionally be moveable, while object table 106 and/or the pattern generator 104 can have a fixed position to provide the required relative movement.
  • object table 106 can be fixed, with substrate 114 being moveable over object table 106. Where this is done, object table 106 is provided with a multitude of openings on a flat uppermost surface, gas being fed through the openings to provide a gas cushion that is capable of supporting substrate 114. This is conventionally referred to as an air bearing arrangement. Substrate 114 is moved over object table 106 using one or more actuators (not shown), that are capable of accurately positioning substrate 114 with respect to the path of beam 110. Alternatively, substrate 114 can be moved over object table 106 by selectively starting and stopping the passage of gas through the openings.
  • lithography apparatus 100 can include an inspection device (not specifically shown) that inspects an image exposed on substrate 114.
  • substrate 114 can be inspected manually.
  • the pattern "displayed" on pattern generator 104 can differ substantially from the pattern eventually transferred to a layer of or on the substrate.
  • the pattern eventually generated on the substrate can not correspond to the pattern formed at any one instant on pattern generator 104. This can be the case in an arrangement in which the eventual pattern formed on each part of the substrate is built up over a given period of time or a given number of exposures during which the pattern on pattern generator 104 and/or the relative position of the substrate changes.
  • suspicious bit information can be used to pattern the beam in such a manner that the projected beam projects one or more markers onto the substrate.
  • the patterned beam can include a pattern (associated with an image to be exposed) and at least one marker (associated with suspicious bit information).
  • the at least one marker can be projected by projection system 108 proximate portions of substrate 114 where an error is suspected based on the suspicious bit information. That is, the one or more marker can appear in the pattern that is associated with the image to be exposed or on the substrate border outside the pattern that is associated with the image to be exposed.
  • the depicted apparatus 100 can be used in four preferred modes:
  • Step mode the entire pattern on pattern generator 104 is projected in one go (i.e., a single "flash") onto a target portion 120.
  • Object table 106 is then moved in the x and/or y directions to a different position for a different target portion 120 to be irradiated by patterned beam 110.
  • Pulse mode pattern generator 104 is kept essentially stationary and the entire pattern is projected onto a target portion 120 of substrate 114 using pulsed radiation system 102.
  • Object table 106 is moved with an essentially constant speed such that patterned beam 110 is caused to scan a line across substrate 114.
  • the pattern on pattern generator 104 is updated as required between pulses of radiation system 102 and the pulses are timed such that successive target portions 120 are exposed at the required locations on substrate 114. Consequently, patterned beam 110 can scan across substrate 114 to expose the complete pattern for a strip of substrate 114. The process is repeated until substrate 114 has been exposed line by line.
  • Continuous scan mode essentially the same as pulse mode except that a substantially constant radiation system 102 is used and the pattern on pattern generator 104 is updated as patterned beam 110 scans across substrate 114 and exposes it.
  • the pattern generated by the SLM or MSA of pattern generator 104 i.e., the "on” or “off” state of each of the individually controllable elements - hereinafter referred to as "SLM pixels" are periodically updated to transfer the desired image to the substrate.
  • the pattern can be updated between each step or scan operation.
  • the SLM pattern is updated as required between pulses of the radiation system.
  • the SLM pattern is updated as the beam scans across the substrate.
  • FIG. 3 depicts a flowchart 300 that illustrates an exemplary method, in accordance with an embodiment of the present invention.
  • Flowchart 300 begins at step 310, in which it is determined whether data includes at least one suspicious bit.
  • detector 204 can compare a data set to an error criterion to determine if a suspicious bit or a combination of suspicious bits is present in the data.
  • An example error criterion can include, but is not limited to, the following: (i) at least one suspicious bit does not exist if a least significant bit of a digital binary number is a 1; and (ii) at least one suspicious bit exists if a most significant bit of a digital binary number is a 1.
  • the error criterion can be manually input, e.g., by input device 208.
  • the error criterion is compared to each bit in the data.
  • detecting a suspicious bit can include the use of an error detection algorithm.
  • Example error detection algorithms can include, but are not limited to, a parity check algorithm, an error-code detection algorithm (e.g., Cyclic Redundancy Check), combinations thereof, or some other error detection algorithm.
  • the data is used to control a pattern generator.
  • rasterizer 206 can send the data to pattern generator 104.
  • suspicious bit information can be associated and sent with the data.
  • the suspicious bit information is stored in memory (e.g., memory 202) before being sent with the data to pattern generator 104.
  • the pattern generator patterns a beam of radiation.
  • pattern generator 104 can pattern the beam of radiation, as described above.
  • step 340 features in the patterned beam of radiation are projected onto a target portion of a substrate.
  • projection system 108 can project the patterned beam onto a portion of substrate 114.
  • the substrate can include, but are not limited to, a semiconductor substrate, a glass substrate, a flat panel display substrate, and a polymer substrate, or some other substrate used in maskless applications.
  • one or more markers in the patterned beam are projected onto the substrate proximate respective ones of the target portions when the suspicious bit is determined in step 310.
  • FPD flat panel display
  • a marker at the X coordinate and a marker at the Y coordinate, inside or outside of the pattern can be printed on the panel; a single marker inside the pattern is also possible.
  • An area of the substrate that has a marker can be inspected to determine if the features associated with the marker are within predetermined specifications.
  • Example features that can be inspected can include, but are not limited to, placement of features, image contrast, image log slope, critical dimension uniformity, out of focus behavior, or some other feature.
  • Example advantages of the present invention can include, but are not limited to the following.

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  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Claims (16)

  1. Verfahren zur Fehlermarkierung auf einem Substrat, umfassend:
    (a) Bestimmen, ob die Daten wenigstens ein verdächtiges Bit enthalten;
    (b) Steuern einer Mustererzeugungseinrichtung (104) mittels der Daten;
    (c) Aufbringen eines Musters auf einen Strahl aus Strahlung (110) unter Verwendung der Mustererzeugungseinrichtung (104); und
    (d) Projizieren von Strukturen im gemusterten Strahl aus Strahlung auf einen Zielabschnitt (120) eines Substrats (114);
    gekennzeichnet durch:
    (e) Projizieren einer Markierung oder mehrerer Markierungen im gemusterten Strahl auf das Substrat (114), wodurch die Zielabschnitte angezeigt werden, die dem wenigstens einen verdächtigen Bit, wie in Schritt (a) bestimmt, entsprechen.
  2. Verfahren nach Anspruch 1, wobei Schritt (a) umfasst:
    Verwenden eines Fehlererfassungsalgorithmus, um zu bestimmen, ob die Daten wenigstens ein verdächtiges Bit enthalten.
  3. Verfahren nach Anspruch 1 oder 2, wobei Schritt (a) umfasst:
    Vergleichen eines Fehlerkriteriums mit den Daten.
  4. Verfahren nach Anspruch 3, wobei das Fehlerkriterium umfasst:
    Bestimmen, dass wenigstens ein verdächtiges Bit nicht existiert, wenn ein oder mehrere weniger bedeutende Bits einer digitalen Binärzahl der Daten eine 1 ist; und
    Bestimmen, dass wenigstens ein verdächtiges Bit existiert, wenn ein oder mehrere höchst bedeutende Bits der digitalen Binärzahl eine 1 ist/sind.
  5. Verfahren nach Anspruch 3 oder 4, ferner umfassend:
    manuelle Eingabe des Fehlerkriteriums.
  6. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Substrat (114) einen Flachbildschirm umfasst und wobei die Markierung als Koordinaten von wenigstens einem verdächtigen Bereich eines Feldes des Flachbildschirms entsprechend dem wenigstens einen verdächtigen Bit wirkt.
  7. Verfahren nach einem der vorhergehenden Ansprüche, ferner umfassend:
    Inspizieren von Bereichen des Substrats, welche die Markierung umfassen, um zu bestimmen, ob sich die zur Markierung zugehörigen Merkmale innerhalb vorbestimmter Spezifikationen befinden.
  8. Verfahren nach Anspruch 1, wobei das Substrat wenigstens eines von einem Halbleitersubstrat, einem Flachbildschirmsubstrat und einem Polymersubstrat umfasst.
  9. System, mit:
    einem Steuermodul (150), das so konfiguriert ist, dass es erfasst, ob Daten wenigstens ein verdächtiges Bit enthalten und verdächtige Bitinformationen erzeugen;
    einer Mustererzeugungseinrichtung (104), die so konfiguriert ist, dass sie einen Strahl aus Strahlung (110) mustert, wobei die Daten und die verdächtige Bitinformation zum Steuern der Mustererzeugungseinrichtung verwendet werden; und
    einem Projektionssystem (108), das so konfiguriert ist, dass der gemusterte Strahl aus Strahlung auf einen Zielabschnitt (120) eines Substrats (114) projiziert wird;
    dadurch gekennzeichnet, dass die Mustererzeugungseinrichtung (104) so konfiguriert ist, dass sie im gemusterten Strahl aus Strahlung eine Markierung erzeugt, die auf der verdächtigen Bitinformation basiert und Zielabschnitte anzeigt, die dem wenigstens einen verdächtigen Bit entsprechen.
  10. System nach Anspruch 9, wobei das Steuermodul (150) umfasst:
    einen Speicher (202), der so konfiguriert ist, dass er die Daten und jede verdächtige Bitinformation, die sich auf das wenigstens eine verdächtige Bit bezieht, speichert; und
    eine Rastereinrichtung (206), die so konfiguriert ist, dass sie die Daten und jede verdächtige Bitinformation an die Mustererzeugungseinrichtung (104) sendet.
  11. System nach Anspruch 9 oder 10, wobei der gemusterte Strahl umfasst:
    ein zu den Daten gehörendes Muster; und
    wenigstens eine zu der verdächtigen Bitinformation zugehörige Markierung, die zu dem Muster gehört.
  12. System nach Anspruch 9, 10 oder 11, wobei das Steuermodul (150) umfasst:
    einen Detektor (204), der so konfiguriert ist, dass er ein Fehlerkriterium mit den Daten vergleicht, um festzustellen, ob wenigstens ein verdächtiges Bit in den Daten existiert.
  13. System nach Anspruch 12, ferner umfassend:
    eine Eingabevorrichtung (208) für die Eingabe des Fehlerkriteriums.
  14. System nach Anspruch 11 oder jedem Unteranspruch von Anspruch 11, wobei die wenigstens eine Markierung als Koordinaten auf dem Substrat (114) des wenigstens einen verdächtigen Bits wirkt.
  15. System nach einem der Ansprüche 9 bis 14, ferner umfassend:
    ein Prüfsystem, das so konfiguriert ist, dass es mögliche Problembereiche des Substrats (114), die durch die Markierung markiert sind, prüft, um festzustellen, ob sich das zugehörige Muster innerhalb vorbestimmter Spezifikationen befindet.
  16. System nach einem der Ansprüche 9 bis 15, wobei das Substrat (114) wenigstens eines von einem Halbleitersubstrat, einem Flachbildschirmsubstrat und einem Polymersubstrat umfasst.
EP05257757A 2004-12-28 2005-12-16 System und Verfahren zur Fehlermarkierung auf einem Substrat bei maskenlosen Anwendungen Active EP1677155B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/022,926 US7403865B2 (en) 2004-12-28 2004-12-28 System and method for fault indication on a substrate in maskless applications

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EP1677155B1 true EP1677155B1 (de) 2007-07-04

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EP (1) EP1677155B1 (de)
JP (1) JP2006191065A (de)
KR (1) KR100682609B1 (de)
CN (1) CN1797219A (de)
DE (1) DE602005001547T2 (de)
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7403865B2 (en) * 2004-12-28 2008-07-22 Asml Netherlands B.V. System and method for fault indication on a substrate in maskless applications
US8539395B2 (en) * 2010-03-05 2013-09-17 Micronic Laser Systems Ab Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image
JP6795444B2 (ja) * 2017-04-06 2020-12-02 ルネサスエレクトロニクス株式会社 異常検知システム、半導体装置の製造システムおよび製造方法
US11914305B2 (en) * 2020-02-18 2024-02-27 Applied Materials, Inc. Data inspection for digital lithography for HVM using offline and inline approach
CN113534614B (zh) * 2021-06-28 2023-09-19 上海华力集成电路制造有限公司 一种基于扫描式曝光机的动态照明方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875416A (en) * 1970-06-30 1975-04-01 Texas Instruments Inc Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
EP0527166B1 (de) * 1990-05-02 1995-06-14 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Belichtungsvorrichtung
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US6219015B1 (en) * 1992-04-28 2001-04-17 The Board Of Directors Of The Leland Stanford, Junior University Method and apparatus for using an array of grating light valves to produce multicolor optical images
JPH05313353A (ja) * 1992-05-09 1993-11-26 Asahi Optical Co Ltd マスクフィルム検査装置
JP3224041B2 (ja) * 1992-07-29 2001-10-29 株式会社ニコン 露光方法及び装置
US5729331A (en) * 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
JP3339149B2 (ja) * 1993-12-08 2002-10-28 株式会社ニコン 走査型露光装置ならびに露光方法
US5677703A (en) * 1995-01-06 1997-10-14 Texas Instruments Incorporated Data loading circuit for digital micro-mirror device
US5530482A (en) * 1995-03-21 1996-06-25 Texas Instruments Incorporated Pixel data processing for spatial light modulator having staggered pixels
WO1997034171A2 (en) * 1996-02-28 1997-09-18 Johnson Kenneth C Microlens scanner for microlithography and wide-field confocal microscopy
JP4126096B2 (ja) 1997-01-29 2008-07-30 マイクロニック レーザー システムズ アクチボラゲット 感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置
US6177980B1 (en) * 1997-02-20 2001-01-23 Kenneth C. Johnson High-throughput, maskless lithography system
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US5982553A (en) * 1997-03-20 1999-11-09 Silicon Light Machines Display device incorporating one-dimensional grating light-valve array
SE9800665D0 (sv) * 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
SE516914C2 (sv) * 1999-09-09 2002-03-19 Micronic Laser Systems Ab Metoder och rastrerare för högpresterande mönstergenerering
KR100827874B1 (ko) * 2000-05-22 2008-05-07 가부시키가이샤 니콘 노광 장치, 노광 장치의 제조 방법, 노광 방법, 마이크로 장치의 제조 방법, 및 디바이스의 제조 방법
US7302111B2 (en) * 2001-09-12 2007-11-27 Micronic Laser Systems A.B. Graphics engine for high precision lithography
JP3563384B2 (ja) * 2001-11-08 2004-09-08 大日本スクリーン製造株式会社 画像記録装置
DE60230663D1 (de) * 2001-11-27 2009-02-12 Asml Netherlands Bv Bilderzeugungsapparat
KR100545297B1 (ko) * 2002-06-12 2006-01-24 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
US6870554B2 (en) * 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
EP1482373A1 (de) * 2003-05-30 2004-12-01 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
JP4501481B2 (ja) * 2004-03-22 2010-07-14 セイコーエプソン株式会社 マルチプロジェクションシステムのための画像補正方法
US7020582B1 (en) * 2004-04-28 2006-03-28 Altera Corporation Methods and apparatus for laser marking of integrated circuit faults
US7643192B2 (en) * 2004-11-24 2010-01-05 Asml Holding N.V. Pattern generator using a dual phase step element and method of using same
US7403865B2 (en) * 2004-12-28 2008-07-22 Asml Netherlands B.V. System and method for fault indication on a substrate in maskless applications

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

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KR100682609B1 (ko) 2007-02-15
DE602005001547D1 (de) 2007-08-16
EP1677155A1 (de) 2006-07-05
US7403865B2 (en) 2008-07-22
JP2006191065A (ja) 2006-07-20
CN1797219A (zh) 2006-07-05
DE602005001547T2 (de) 2008-03-20
SG123751A1 (en) 2006-07-26
KR20060076751A (ko) 2006-07-04
TWI301563B (en) 2008-10-01
US20060142967A1 (en) 2006-06-29
TW200627089A (en) 2006-08-01

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