EP1669609B1 - Partialdruckregelung von Gas zur Optimierung eines Verfahrens - Google Patents

Partialdruckregelung von Gas zur Optimierung eines Verfahrens Download PDF

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Publication number
EP1669609B1
EP1669609B1 EP20050300948 EP05300948A EP1669609B1 EP 1669609 B1 EP1669609 B1 EP 1669609B1 EP 20050300948 EP20050300948 EP 20050300948 EP 05300948 A EP05300948 A EP 05300948A EP 1669609 B1 EP1669609 B1 EP 1669609B1
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EP
European Patent Office
Prior art keywords
pressure
secondary pump
gases
control
delivery pressure
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Not-in-force
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EP20050300948
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English (en)
French (fr)
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EP1669609A1 (de
Inventor
Jean-Pierre Desbiolles
Michel Puech
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Alcatel Lucent SAS
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Alcatel Lucent SAS
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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D27/00—Control, e.g. regulation, of pumps, pumping installations or pumping systems specially adapted for elastic fluids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D19/00—Axial-flow pumps
    • F04D19/02—Multi-stage pumps
    • F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/85986—Pumped fluid control
    • Y10T137/86002—Fluid pressure responsive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86131—Plural
    • Y10T137/86139—Serial
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87917—Flow path with serial valves and/or closures

Definitions

  • the present invention relates to the control of the atmosphere in a vacuum chamber such as a process chamber used in the manufacture of semiconductors.
  • the reactions are generally produced in a plasma, and they require a permanent control of the global gas pressure in the vacuum chamber.
  • the overall gas pressure is an important parameter in the processes, and it is commonly used control means and adjustment adapted to control and adjust the total gas pressure of the gas mixture in the vacuum chamber.
  • At least one secondary pump adapted to the low pressures to obtain, at least one primary pump adapted to discharge at atmospheric pressure, a first pipe having an inlet connected to a pipe is used. outlet of the vacuum chamber and an outlet of which is connected to a suction of the secondary pump, and an intermediate pipe whose inlet is connected to a discharge of the secondary pump and an outlet of which is connected to a suction of the primary pump .
  • the known devices have disadvantages, however, in that the proportions of gases present in a vacuum chamber such as a process chamber are not controlled.
  • the injected gases are cracked by a plasma, and then they react with the different materials present on the substrate.
  • the concentration of gaseous residues will depend directly on how the secondary pump will pump the different species, which may in some cases not be optimum in the process.
  • the secondary pump can evacuate, in priority, the active gases which are useful for carrying out the process, and leave in the vacuum chamber the inactive gases which result from the reaction of the active gases with the materials and which are therefore useless for carrying out the process. It is understood that this has the effect of slowing or even degrading the performance of the process.
  • the means for controlling and regulating the overall gas pressure in a vacuum chamber generally comprise various means such as a gas injection into the vacuum chamber, and a control valve placed in the first pipe upstream of the pump. secondary, that is to say at the output of the vacuum chamber. It happens that such a control valve tends to promote the pumping of light gases, which are generally active gases, and tends to slow down the evacuation of heavy gases such as the gases resulting from the reactions. This is therefore unfavorable to the aim pursued.
  • the document US 6,200,107 proposes to move the regulating valve and arrange it in a bypass line in parallel on the secondary pump, between the first pipe and the intermediate pipe.
  • the control valve thus constitutes the unique means for regulating the pressure in a process chamber, and promotes the evacuation of the inactive gases from the reactions in the chamber.
  • This solution also has the major disadvantage of polluting the process chamber in terms of particles, because it reinjects gas that has circulated through the secondary pump and therefore potentially loaded with particles.
  • the problem proposed by the present invention is to find another way to establish and control a low pressure gas mixture in a vacuum chamber, which allows both to control the overall gas pressure in the vacuum chamber and control the proportions of the different gases in the gaseous mixture present in the vacuum chamber.
  • the invention thus aims to optimize the processes used in vacuum enclosures, such as semiconductor manufacturing processes.
  • Another object of the invention is to avoid any risk of additional pollution that may be produced by the device according to the invention.
  • the present invention results from the observation according to which the secondary pumps of molecular, turbomolecular or hybrid type have a pumping capacity which varies as a function of the pressure at the outlet of the pump, and this variation of pumping capacity does not vary. is not the same for all gases. As a result, the pumps perform a selective pumping that can be modified by the outlet pressure.
  • the idea underlying the invention is that by correctly choosing the output pressure of the secondary pump, it is possible to act favorably on the partial pressures of the gases in the vacuum chamber to control the parameters of a process.
  • first control and adjustment means which permanently maintain the total gas pressure of the gaseous mixture in the vacuum chamber, and second control and adjustment means which adjust the proportions of the gaseous mixture in the vacuum chamber. gas
  • the first control and adjustment means are arranged upstream of the secondary pump, and comprise a control valve interposed in the first pipe and / or controlled gas injection means in the vacuum chamber.
  • the second control and adjustment means comprise a control valve interposed in the intermediate pipe.
  • the second control and adjustment means comprise a gas injection device for injecting a neutral gas into the intermediate pipe.
  • the second control and adjustment means comprise a speed control means for controlling the speed of the primary pump.
  • the second control and adjustment means it is possible to combine a control valve and / or gas injection means and / or a primary pump speed variation.
  • the device can act in an open loop, for example receiving a setpoint from an external control means that manages the method implemented in the vacuum chamber.
  • the device according to the invention may furthermore comprise a control device which controls the second control and adjustment means according to a specific program in order to adapt the selective pumping capacity of the secondary pump to the different successive stages of operation. a treatment process taking place in the vacuum chamber.
  • the invention provides a method for establishing and controlling a suitable low pressure gas mixture in a vacuum chamber using a device as defined above. In this method, it acts on the discharge pressure of the secondary pump to adapt its selective pumping capacity and to thereby adjust the proportions of gases in the gas mixture.
  • the discharge pressure is modified by modifying the conductance of the intermediate pipe.
  • it acts on the discharge pressure by injecting a neutral gas into the intermediate pipe.
  • it acts on the discharge pressure by changing the speed of the primary pump.
  • the three modes of action above can be combined together or two by two.
  • the method according to the invention acts on the discharge pressure of the secondary pump in the direction of an increase in pumping of moisture during a controlled emptying process of the vacuum chamber.
  • the process acts on the discharge pressure of the secondary pump in the direction of a constant maintenance of the partial pressure of at least one gas in the vacuum chamber.
  • the device defined above may find application for the compensation of variations in pumping characteristics of a secondary pump. These variations may occur over time as a result of successive deposits on the walls of the pump, or may occur when changing from one pump to be replaced by another.
  • a particularly interesting application is the preferential evacuation of heavy gases in the chambers of dry etching processes in the manufacture of semiconductors or electromechanical microsystems (MEMS). It is thus possible to substantially increase the etching rate.
  • MEMS electromechanical microsystems
  • Another interesting application may be to control the quality of CVD (Chemical Vapor Deposition) deposits by acting on the discharge pressure of the secondary pump.
  • CVD Chemical Vapor Deposition
  • the device can also find an application to compensate for the drifts of a gas pumping system in a vacuum chamber, drifts of all kinds that can occur for any known or unknown reasons.
  • FIG. 6 illustrates the partial pressures of a mixture of two gases with constant total pressure at the inlet of a turbomolecular pump, given in arbitrary units, for two different outlet pressures of the turbomolecular pump.
  • the speed of the turbomolecular pump is constant.
  • Zone 1 illustrates the partial pressure of argon for an outlet pressure of 2.155 Torr at the outlet of the turbomolecular pump
  • Zone 2 illustrates the partial pressure of helium under the same conditions, for a mixture of argon and helium at a given total pressure.
  • Zones 3 and 4 respectively illustrate, for mixing the same argon and helium gases having the same total pressure, the respective partial pressures of argon and helium for an outlet pressure of 0.359 Torr at the outlet of the turbomolecular pump.
  • curves 5, 6 and 7 respectively represent the pumping rates, in liters per second, of helium, nitrogen or argon, depending on the outlet pressure of a turbomolecular pump.
  • the pumping rates are all three decreasing, for the three helium, nitrogen and argon gases, but that the variations different.
  • the pumping rate of argon is relatively constant up to an outlet pressure of about 0.8 millibars, and decreases fairly rapidly thereafter.
  • the nitrogen pumping rate is relatively constant up to an output pressure of 0.4 millibars, and then decreases more rapidly than the pumping rate of argon.
  • the pumping speed of helium is strongly decreasing at the outlet pressure of 0.2 millibars.
  • the selective pumping capacity of the pump is modified to favor the pumping of one or the other of the gases.
  • the present invention takes advantage of this phenomenon to improve the establishment and control of a low pressure gas mixture in a vacuum chamber.
  • FIG. 1 which illustrates a general structure of a device according to one embodiment of the invention, is now considered.
  • the device is intended to establish and control a suitable gas mixture at low pressure in a vacuum chamber 8 such as a process chamber for manufacturing semiconductor components, and comprises a secondary pump 9 of molecular, turbomolecular or hybrid type, a primary pump 10 adapted to discharge at an outlet 11 at atmospheric pressure, a first pipe 12, an inlet 13 of which is connected to an outlet 14 of the vacuum enclosure 8 and an outlet 15 of which is connected to a suction 16 of the secondary pump 9, and an intermediate pipe 17, an inlet 18 is connected to a discharge 19 of the secondary pump 9 and an outlet 20 is connected to a suction 21 of the primary pump 10.
  • a vacuum chamber 8 such as a process chamber for manufacturing semiconductor components
  • the device comprises first control and adjustment means 22, adapted to control and adjust the total gas pressure of the gas mixture in the vacuum chamber 8.
  • the first control and adjustment means 22 may comprise controlled gas injection means 23 for injecting a gas into the vacuum chamber 8, and / or a regulation valve 24 interposed in the first pipe 12 and controlled by a speaker pressure controller 25 according to total pressure measurement data produced by a pressure gauge 26 in the vacuum chamber 8.
  • the enclosure pressure controller 25 may for example be a microcontroller programmed to keep constant the total pressure in the vacuum chamber 8 , as a function of a total pressure setpoint 27.
  • the device further comprises second control and adjustment means 28, distinct from the first control and adjustment means 22, arranged downstream of the secondary pump 9, and acting on the discharge pressure of the secondary pump 9 in the intermediate pipe 17, in the pressure range where the pressure changes cause significant variations in the selective pumping speed of the different gases of the mixture by the secondary pump 9.
  • second control and adjustment means 28 distinct from the first control and adjustment means 22, arranged downstream of the secondary pump 9, and acting on the discharge pressure of the secondary pump 9 in the intermediate pipe 17, in the pressure range where the pressure changes cause significant variations in the selective pumping speed of the different gases of the mixture by the secondary pump 9.
  • the second control and adjustment means 28 may comprise a regulation means 29 controlling the conductance of the intermediate pipe 17, controlled by a discharge pressure controller 30 which receives a discharge pressure setpoint 32 and data output pressure produced by a discharge pressure gauge 31 in the intermediate pipe 17.
  • FIGS. 2, 3 and 4 show three embodiments of the second control and adjustment means.
  • the secondary pump 9 the primary pump 10
  • the discharge pressure sensor 31 the discharge pressure controller 30, and a discharge pressure setpoint 32.
  • the regulating means is a regulating valve 29a interposed in the intermediate pipe 17.
  • the regulating means is a gas injection device 29b for injecting a neutral gas such as nitrogen into the intermediate pipe 17.
  • the regulation means is a speed control means 29c for varying the rotation speed of the primary pump 10.
  • Each of these embodiments of the regulating means 29 may be used alone or in combination with one or two other regulating means.
  • control device 33 which generates the discharge pressure setpoint 32.
  • the control device 33 thus controls the second control and adjustment means 28, for example according to a specific program recorded in a memory and which adapts the selective pumping capacity of the secondary pump 9 to the successive successive stages of a treatment process taking place in the vacuum chamber 8.
  • the control device 33 can generate a high discharge pressure setpoint 32 during the first stage and a relatively low discharge pressure setpoint 32 for the second stage.
  • the evolution of the discharge pressure setpoint 32 can be adapted to each treatment process, by seeking at each step the optimization of the selective pumping capacity of the secondary pump 9 to optimize the treatment process.
  • FIG. 5 which illustrates a second more advanced embodiment of the device according to the invention, is now considered.
  • the device further comprises means for regulating the partial pressures of the gases in the vacuum chamber 8.
  • partial pressure sensors 34 are provided, able to determine the partial pressures of one or more gases of the gaseous mixture in the vacuum chamber 8, and to produce on their outputs 35 partial pressure data sent by a line 36 to a partial pressure controller 37.
  • a partial pressure controller 37 is furthermore provided, which thus receives the partial pressure data produced by the partial pressure sensors 34, which compares these data with a partial pressure setpoint 38, and which generates on its output 39 a signal of output which drives the second control and adjustment means 28 to adapt the selective pumping capacity of the secondary pump 9.
  • the partial pressure controller 37 compares the measured partial pressure data and the partial pressure reference data 38 by looking for the differences between the measured proportions of the gases and the corresponding proportions of the partial pressure setpoint 38. presence of a gap, the pressure controller part 37 generates on its output 39 a discharge pressure signal which drives the regulating means 29 to act on the discharge pressure of the secondary pump 9 to adapt the selective pumping capacity of the secondary pump 9 in the direction of a reducing the difference between the measured proportions of the gases and the corresponding proportions of the partial pressures setpoint 38.
  • the partial pressure sensors 34 communicate the measurements P1 and P2 to the partial pressure controller 37 which reports it. P1 / P2.
  • the partial pressure controller also receives, in the partial pressure setpoint 38, the pressures P10 and P20 for the same gases, and can calculate the ratio P10 / P20.
  • the partial pressure controller 37 determines the difference between the ratios P1 / P2 and P10 / P20, and deduces, based on data previously stored in memory, if the discharge pressure in the intermediate pipe 17 pump discharge Secondary 9 must be increased or decreased to reduce this difference.
  • the partial pressure controller 37 thus generates on its output 39 a discharge pressure setpoint.
  • the discharge pressure sensor 31 measures the discharge pressure in the intermediate pipe 17 and generates pressure measurement data.
  • the discharge pressure controller 30 receives the discharge pressure setpoint and the discharge pressure measurement data, and controls the regulating means 29 to reduce the difference between the discharge pressure setpoint and the pressure measurement data. of repression.
  • the partial pressure controller can directly control the regulating means 29 to reduce the difference between a partial pressure setpoint and the partial pressure measurement.
  • the device according to the invention can find various applications during the process steps in which there is an interest in adjusting the proportion of gases in a gaseous mixture.
  • the possibility of acting on the selective pumping capacity of the secondary pump may also be useful in cases where it is desired to compensate for the drifts of a system for pumping gases in a vacuum chamber.
  • Another interesting application lies in the compensation of possible variations in the pumping characteristics of a secondary pump, either because of aging over time, or because of progressive deposits of material on the walls of the pump, or even makes a replacement of one pump by another.
  • the heavy gases resulting from the etching reactions can advantageously be evacuated preferentially by an increase in the discharge pressure of the secondary pump. This results in a significant increase in the etching rate.
  • the control system of the discharge pressure of the secondary pump may be carried out in open loop, that is to say without servocontrolling, or in closed loop by the servocontrol of the pressure given by a sensor located on the line of empty at the outlet of the secondary pump.
  • the slaving can also be performed in a global manner by measuring the partial pressures in the vacuum chamber, for example by mass spectrometers, optical spectrometers, and by acting on the output pressure control element. to obtain the desired concentration in the vacuum chamber.
  • the partial pressure setpoint of the gases can result from real-time measurements of various parameters of a process taking place in the vacuum chamber, or of delayed time indicators.
  • the deferred time indicators may be measures related to a process optimization, for example the attack speed, the contamination measurement, the drift of a process parameter in the case of an indicator linked to repackaging.
  • a device acts on the discharge pressure of the secondary pump 9 in the pressure range where these modifications cause significant variations in the pumping speed of the gases. selectively according to the nature of the gases, because of the intrinsic characteristics of turbomolecular, molecular or hybrid pumps.
  • the device By applying variations of the partial pumping rates, the device also causes a variation of the total pumping rate in the vacuum chamber, and therefore a possible change in the total pressure in the vacuum chamber.
  • the device therefore acts, simultaneously, on the means for regulating the suction pressure upstream of the secondary pump 9, to readjust the total pressure in the vacuum chamber and to keep it constant.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Flow Control (AREA)
  • Inorganic Insulating Materials (AREA)
  • Applications Or Details Of Rotary Compressors (AREA)

Claims (19)

  1. - Vorrichtung zum Aufbauen und Regeln eines geeigneten Gasgemisches mit niedrigem. Druck in einem Vakuumbehälter (8), beinhaltend:
    - mindestens eine Sekundärpumpe (9) ausgeführt als Molekular-, Turbomolekular- oder Hybridpumpe,
    - mindestens eine Primärpumpe (10), die geeignet ist für das Fördern bei atmosphärischem Druck,
    - eine erste Leitung (12), von der ein Eingang (13) an einen Ausgang (14) des Vakuumbehälters (8) angeschlossen ist und von der ein Ausgang (15) an eine Ansaugung (16) der Sekundärpumpe (9) angeschlossen ist,
    - eine Zwischenleitung (17), von der ein Eingang (18) an eine Druckleitung (19) der Sekundärpumpe (9) angeschlossen ist und von der ein Ausgang (20) an eine Ansaugung (21) der Primärpumpe (10) angeschlossen ist,
    - erste Mittel zur Regelung und Einstellung (22), die geeignet sind, um den Gesamtgasdruck des Gasgemisches im Vakuumbehälter (8) in Abhängigkeit von einem Gesamtdrucksollwert (27) zu regeln und einzustellen,
    dadurch gekennzeichnet, dass sie außerdem folgendes einschließt:
    zweite Mittel zur Regelung und Einstellung die sich von den ersten Mitteln für die Regelung und Einstellung (22) unterscheiden, die unterhalb der Sekundärpumpe (9) angeordnet sind und auf den Förderdruck der Sekundärpumpe (9) im Bereich von Drücken einwirken, wo Druckänderungen deutliche Änderungen von selektiven Pumpgeschwindigkeiten der verschiedenen Gase des Gemisches nach sich ziehen, um die selektive Pumpkapazität der Sekundärpumpe (9) anzupassen und somit die Größenverhältnisse der Gase des Gasgemisches im Vakuumbehälter (8) einzustellen.
  2. - Vorrichtung gemäß Anspruch 1, dadurch gekennzeichnet, dass die ersten Mittel zur Regelung und Anpassung (22) oberhalb der Sekundärpumpe (9) angeordnet sind und ein Regulierventil (24) einschließen, das in der ersten Leitung (12) eingefügt ist und/oder Mittel zur kontrollierten Einspritzung von Gas (23) in den Vakuumbehälter (8).
  3. - Vorrichtung gemäß einem der Ansprüche 1 oder 2, dadurch gekennzeichnet, dass die zweiten Mittel für die Regelung und Einstellung (28) ein Regulierventil (29a) einschließen, das in der Zwischenleitung (17) eingefügt ist.
  4. - Vorrichtung gemäß einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass die zweiten Mittel zur Regelung und Einstellung (28) eine Vorrichtung zur Gaseinspritzung (29b) zum Einspritzen eines Neutralgases in die Zwischenleitung (17) einschließen,
  5. - Vorrichtung gemäß einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die zweiten Mittel zur Regelung und Einstellung (28) ein Mittel zur Geschwindigkeitssteuerung (29c) zum Steuern der Geschwindigkeit der Primärpumpe (10) einschließen,
  6. - Vorrichtung gemäß einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass sie folgendes einschließt:
    - Partialdrucksensoren (34), die im Stande sind, den Partialdruck eines Gases oder mehrerer Gase des Gasgemisches im Vakuumbehälter (8) zu bestimmen und Partialdruckdaten zu erstellen,
    - einen Partialdruckcontroller (37), der die Partialdruckdaten empfängt, die von den Partialdrucksensoren (34) erstellt werden, diese Daten mit einem Partialdrucksollwert (38) vergleicht und die Abweichungen sucht zwischen den gemessenen Größenverhältnissen der Gase und den entsprechenden Größenverhältnissen des Partialdrucksollwerts (38), und ein Ausgangssignal generiert, welches die zweiten Mittel zur und Einstellung (28) steuert, um die selektive Pumpkapazität der Sekundärpumpe (9) dahingehend anzupassen, dass der Abstand zwischen den gemessenen Größenverhältnissen der Gase und den entsprechenden Größenverhältnissen des Partialdrucksolwerts (38) verringert wird.
  7. - Vorrichtung gemäß Anspruch 6, dadurch gekennzeichnet, dass:
    - der Partialdruckcontroller (37) an seinem Ausgang (39) einen Sollwert für den Förderdruck generiert,
    - ein Förderdrucksensor (31) den Förderdruck in der Zwischenleitung (17) misst und Messdaten betreffend den Förderdruck generiert,
    - ein Förderdruckcontroller (30) den Sollwert für den Förderdruck und die Daten für den Förderdruck empfängt und Mittel zur Regulierung (29) des Förderdrucks steuert, um die Abweichung zwischen dem Förderdrucksollwert und den Messdaten für den Förderdruck zu verringern.
  8. - Vorrichtung gemäß einem der Ansprüche 1, bis 7, dadurch gekennzeichnet, dass sie eine Steuervorrichtung (33) einschließt, welche die zweiten Mittel zur Regelung und Einstellung (28) gemäß einem spezifischen Programm steuert, um die selektive Pumpkapazität der Sekundärpumpe (9) an die verschiedenen aufeinander folgenden Schritte eines Behandlungsverfahrens anzupassen, das im Vakuumbehälter (8) abläuft.
  9. - Verfahren, um ein geeignetes Gasgemisch mit geringem Druck in einem Vakuumbehälter (8) mit Hilfe einer Vorrichtung gemäß einem der Ansprüche 1 bis 8 herzustellen und zu regeln, dadurch gekennzeichnet, dass man auf den Förderdruck der Sekundärpumpe (9) einwirkt, um ihre selektive Pumpkapazität anzupassen und somit die Größenverhältnisse der Gase im Gasgemisch einzustellen.
  10. - Verfahren gemäß Anspruch 9, dadurch gekennzeichnet, dass man auf den Förderdruck dadurch einwirkt, dass man die Konduktanz der Zwischenleitung (17) verändert.
  11. - Verfahren gemäß Anspruch 9 oder 10, dadurch gekennzeichnet, dass man auf den Förderdruck einwirkt, indem man ein Neutralgas in die Zwischenleitung (17) einspritzt.
  12. - Verfahren gemäß einem der Ansprüche 9 bis 11, dadurch gekennzeichnet, dass man auf den Förderdruck einwirkt, indem man die Geschwindigkeit der Primärpumpe (10) verändert.
  13. - Verfahren gemäß einem der Ansprüche 9 bis 12, dadurch gekennzeichnet, dass man auf den Förderdruck der Sekundärpumpe (9) einwirkt, und zwar abhängig von den aufeinander folgenden Schritten eines Bearbeitungsverfahrens, das im Vakuumbehälter (8) abläuft.
  14. - Verfahren gemäß einem der Ansprüche 9 bis 13, dadurch gekennzeichnet, dass man auf den Förderdruck der Sekundärpumpe (9) im Sinne einer Erhöhung in Sachen Feuchtigkeitspumpen während eines Prozesses zur kontrollierten Entleerung des Vakuumbehälters (8) einwirkt.
  15. - Verfahren gemäß einem der Ansprüche 9 bis 13, dadurch gekennzeichnet, dass man auf den Förderdruck der Sekundärpumpe (9) im Sinne einer Konstanthaltung des Partialdrucks von mindestens einem Gas im Vakuumbehälter (8) einwirkt.
  16. - Anwendung einer Vorrichtung gemäß einem der Ansprüche 1 bis 8 für die Kompensierung der Änderungen von Pumpcharakteristika einer Sekundärpumpe (9).
  17. - Anwendung einer Vorrichtung gemäß einem der Ansprüche 1 bis 8 zur Kompensierung der Abweichungen eines Systems zum Pumpen der Gase in einem Vakuumbehälter (8).
  18. - Anwendung einer Vorrichtung gemäß einem der Ansprüche 1 bis 8 zur Erhöhung der Geschwindigkeit eines Trockengravurverfahrens durch Erhöhung des Förderdrucks der Sekundärpumpe (9).
  19. - Anwendung einer Vorrichtung gemäß einem der Ansprüche 1 bis 8 zur Beherrschung der Qualität von CVD (Gasphasenabscheidung) durch Einwirken auf den Förderdruck der Sekundärpumpe (9).
EP20050300948 2004-12-03 2005-11-18 Partialdruckregelung von Gas zur Optimierung eines Verfahrens Not-in-force EP1669609B1 (de)

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US8297311B2 (en) 2012-10-30
US20060118178A1 (en) 2006-06-08
DE602005004640T2 (de) 2009-01-29
DE602005004640D1 (de) 2008-03-20
US20110005607A1 (en) 2011-01-13
FR2878913B1 (fr) 2007-01-19
EP1669609A1 (de) 2006-06-14
FR2878913A1 (fr) 2006-06-09
US7793685B2 (en) 2010-09-14
WO2006059027A1 (fr) 2006-06-08
ATE385545T1 (de) 2008-02-15

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