EP1669609B1 - Gas partial pressure control for process optimisation - Google Patents

Gas partial pressure control for process optimisation Download PDF

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Publication number
EP1669609B1
EP1669609B1 EP20050300948 EP05300948A EP1669609B1 EP 1669609 B1 EP1669609 B1 EP 1669609B1 EP 20050300948 EP20050300948 EP 20050300948 EP 05300948 A EP05300948 A EP 05300948A EP 1669609 B1 EP1669609 B1 EP 1669609B1
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EP
European Patent Office
Prior art keywords
pressure
secondary pump
gases
control
delivery pressure
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Not-in-force
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EP20050300948
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German (de)
French (fr)
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EP1669609A1 (en
Inventor
Jean-Pierre Desbiolles
Michel Puech
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Alcatel Lucent SAS
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Alcatel Lucent SAS
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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D27/00—Control, e.g. regulation, of pumps, pumping installations or pumping systems specially adapted for elastic fluids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D19/00—Axial-flow pumps
    • F04D19/02—Multi-stage pumps
    • F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/85986—Pumped fluid control
    • Y10T137/86002—Fluid pressure responsive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86131—Plural
    • Y10T137/86139—Serial
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87917—Flow path with serial valves and/or closures

Definitions

  • the present invention relates to the control of the atmosphere in a vacuum chamber such as a process chamber used in the manufacture of semiconductors.
  • the reactions are generally produced in a plasma, and they require a permanent control of the global gas pressure in the vacuum chamber.
  • the overall gas pressure is an important parameter in the processes, and it is commonly used control means and adjustment adapted to control and adjust the total gas pressure of the gas mixture in the vacuum chamber.
  • At least one secondary pump adapted to the low pressures to obtain, at least one primary pump adapted to discharge at atmospheric pressure, a first pipe having an inlet connected to a pipe is used. outlet of the vacuum chamber and an outlet of which is connected to a suction of the secondary pump, and an intermediate pipe whose inlet is connected to a discharge of the secondary pump and an outlet of which is connected to a suction of the primary pump .
  • the known devices have disadvantages, however, in that the proportions of gases present in a vacuum chamber such as a process chamber are not controlled.
  • the injected gases are cracked by a plasma, and then they react with the different materials present on the substrate.
  • the concentration of gaseous residues will depend directly on how the secondary pump will pump the different species, which may in some cases not be optimum in the process.
  • the secondary pump can evacuate, in priority, the active gases which are useful for carrying out the process, and leave in the vacuum chamber the inactive gases which result from the reaction of the active gases with the materials and which are therefore useless for carrying out the process. It is understood that this has the effect of slowing or even degrading the performance of the process.
  • the means for controlling and regulating the overall gas pressure in a vacuum chamber generally comprise various means such as a gas injection into the vacuum chamber, and a control valve placed in the first pipe upstream of the pump. secondary, that is to say at the output of the vacuum chamber. It happens that such a control valve tends to promote the pumping of light gases, which are generally active gases, and tends to slow down the evacuation of heavy gases such as the gases resulting from the reactions. This is therefore unfavorable to the aim pursued.
  • the document US 6,200,107 proposes to move the regulating valve and arrange it in a bypass line in parallel on the secondary pump, between the first pipe and the intermediate pipe.
  • the control valve thus constitutes the unique means for regulating the pressure in a process chamber, and promotes the evacuation of the inactive gases from the reactions in the chamber.
  • This solution also has the major disadvantage of polluting the process chamber in terms of particles, because it reinjects gas that has circulated through the secondary pump and therefore potentially loaded with particles.
  • the problem proposed by the present invention is to find another way to establish and control a low pressure gas mixture in a vacuum chamber, which allows both to control the overall gas pressure in the vacuum chamber and control the proportions of the different gases in the gaseous mixture present in the vacuum chamber.
  • the invention thus aims to optimize the processes used in vacuum enclosures, such as semiconductor manufacturing processes.
  • Another object of the invention is to avoid any risk of additional pollution that may be produced by the device according to the invention.
  • the present invention results from the observation according to which the secondary pumps of molecular, turbomolecular or hybrid type have a pumping capacity which varies as a function of the pressure at the outlet of the pump, and this variation of pumping capacity does not vary. is not the same for all gases. As a result, the pumps perform a selective pumping that can be modified by the outlet pressure.
  • the idea underlying the invention is that by correctly choosing the output pressure of the secondary pump, it is possible to act favorably on the partial pressures of the gases in the vacuum chamber to control the parameters of a process.
  • first control and adjustment means which permanently maintain the total gas pressure of the gaseous mixture in the vacuum chamber, and second control and adjustment means which adjust the proportions of the gaseous mixture in the vacuum chamber. gas
  • the first control and adjustment means are arranged upstream of the secondary pump, and comprise a control valve interposed in the first pipe and / or controlled gas injection means in the vacuum chamber.
  • the second control and adjustment means comprise a control valve interposed in the intermediate pipe.
  • the second control and adjustment means comprise a gas injection device for injecting a neutral gas into the intermediate pipe.
  • the second control and adjustment means comprise a speed control means for controlling the speed of the primary pump.
  • the second control and adjustment means it is possible to combine a control valve and / or gas injection means and / or a primary pump speed variation.
  • the device can act in an open loop, for example receiving a setpoint from an external control means that manages the method implemented in the vacuum chamber.
  • the device according to the invention may furthermore comprise a control device which controls the second control and adjustment means according to a specific program in order to adapt the selective pumping capacity of the secondary pump to the different successive stages of operation. a treatment process taking place in the vacuum chamber.
  • the invention provides a method for establishing and controlling a suitable low pressure gas mixture in a vacuum chamber using a device as defined above. In this method, it acts on the discharge pressure of the secondary pump to adapt its selective pumping capacity and to thereby adjust the proportions of gases in the gas mixture.
  • the discharge pressure is modified by modifying the conductance of the intermediate pipe.
  • it acts on the discharge pressure by injecting a neutral gas into the intermediate pipe.
  • it acts on the discharge pressure by changing the speed of the primary pump.
  • the three modes of action above can be combined together or two by two.
  • the method according to the invention acts on the discharge pressure of the secondary pump in the direction of an increase in pumping of moisture during a controlled emptying process of the vacuum chamber.
  • the process acts on the discharge pressure of the secondary pump in the direction of a constant maintenance of the partial pressure of at least one gas in the vacuum chamber.
  • the device defined above may find application for the compensation of variations in pumping characteristics of a secondary pump. These variations may occur over time as a result of successive deposits on the walls of the pump, or may occur when changing from one pump to be replaced by another.
  • a particularly interesting application is the preferential evacuation of heavy gases in the chambers of dry etching processes in the manufacture of semiconductors or electromechanical microsystems (MEMS). It is thus possible to substantially increase the etching rate.
  • MEMS electromechanical microsystems
  • Another interesting application may be to control the quality of CVD (Chemical Vapor Deposition) deposits by acting on the discharge pressure of the secondary pump.
  • CVD Chemical Vapor Deposition
  • the device can also find an application to compensate for the drifts of a gas pumping system in a vacuum chamber, drifts of all kinds that can occur for any known or unknown reasons.
  • FIG. 6 illustrates the partial pressures of a mixture of two gases with constant total pressure at the inlet of a turbomolecular pump, given in arbitrary units, for two different outlet pressures of the turbomolecular pump.
  • the speed of the turbomolecular pump is constant.
  • Zone 1 illustrates the partial pressure of argon for an outlet pressure of 2.155 Torr at the outlet of the turbomolecular pump
  • Zone 2 illustrates the partial pressure of helium under the same conditions, for a mixture of argon and helium at a given total pressure.
  • Zones 3 and 4 respectively illustrate, for mixing the same argon and helium gases having the same total pressure, the respective partial pressures of argon and helium for an outlet pressure of 0.359 Torr at the outlet of the turbomolecular pump.
  • curves 5, 6 and 7 respectively represent the pumping rates, in liters per second, of helium, nitrogen or argon, depending on the outlet pressure of a turbomolecular pump.
  • the pumping rates are all three decreasing, for the three helium, nitrogen and argon gases, but that the variations different.
  • the pumping rate of argon is relatively constant up to an outlet pressure of about 0.8 millibars, and decreases fairly rapidly thereafter.
  • the nitrogen pumping rate is relatively constant up to an output pressure of 0.4 millibars, and then decreases more rapidly than the pumping rate of argon.
  • the pumping speed of helium is strongly decreasing at the outlet pressure of 0.2 millibars.
  • the selective pumping capacity of the pump is modified to favor the pumping of one or the other of the gases.
  • the present invention takes advantage of this phenomenon to improve the establishment and control of a low pressure gas mixture in a vacuum chamber.
  • FIG. 1 which illustrates a general structure of a device according to one embodiment of the invention, is now considered.
  • the device is intended to establish and control a suitable gas mixture at low pressure in a vacuum chamber 8 such as a process chamber for manufacturing semiconductor components, and comprises a secondary pump 9 of molecular, turbomolecular or hybrid type, a primary pump 10 adapted to discharge at an outlet 11 at atmospheric pressure, a first pipe 12, an inlet 13 of which is connected to an outlet 14 of the vacuum enclosure 8 and an outlet 15 of which is connected to a suction 16 of the secondary pump 9, and an intermediate pipe 17, an inlet 18 is connected to a discharge 19 of the secondary pump 9 and an outlet 20 is connected to a suction 21 of the primary pump 10.
  • a vacuum chamber 8 such as a process chamber for manufacturing semiconductor components
  • the device comprises first control and adjustment means 22, adapted to control and adjust the total gas pressure of the gas mixture in the vacuum chamber 8.
  • the first control and adjustment means 22 may comprise controlled gas injection means 23 for injecting a gas into the vacuum chamber 8, and / or a regulation valve 24 interposed in the first pipe 12 and controlled by a speaker pressure controller 25 according to total pressure measurement data produced by a pressure gauge 26 in the vacuum chamber 8.
  • the enclosure pressure controller 25 may for example be a microcontroller programmed to keep constant the total pressure in the vacuum chamber 8 , as a function of a total pressure setpoint 27.
  • the device further comprises second control and adjustment means 28, distinct from the first control and adjustment means 22, arranged downstream of the secondary pump 9, and acting on the discharge pressure of the secondary pump 9 in the intermediate pipe 17, in the pressure range where the pressure changes cause significant variations in the selective pumping speed of the different gases of the mixture by the secondary pump 9.
  • second control and adjustment means 28 distinct from the first control and adjustment means 22, arranged downstream of the secondary pump 9, and acting on the discharge pressure of the secondary pump 9 in the intermediate pipe 17, in the pressure range where the pressure changes cause significant variations in the selective pumping speed of the different gases of the mixture by the secondary pump 9.
  • the second control and adjustment means 28 may comprise a regulation means 29 controlling the conductance of the intermediate pipe 17, controlled by a discharge pressure controller 30 which receives a discharge pressure setpoint 32 and data output pressure produced by a discharge pressure gauge 31 in the intermediate pipe 17.
  • FIGS. 2, 3 and 4 show three embodiments of the second control and adjustment means.
  • the secondary pump 9 the primary pump 10
  • the discharge pressure sensor 31 the discharge pressure controller 30, and a discharge pressure setpoint 32.
  • the regulating means is a regulating valve 29a interposed in the intermediate pipe 17.
  • the regulating means is a gas injection device 29b for injecting a neutral gas such as nitrogen into the intermediate pipe 17.
  • the regulation means is a speed control means 29c for varying the rotation speed of the primary pump 10.
  • Each of these embodiments of the regulating means 29 may be used alone or in combination with one or two other regulating means.
  • control device 33 which generates the discharge pressure setpoint 32.
  • the control device 33 thus controls the second control and adjustment means 28, for example according to a specific program recorded in a memory and which adapts the selective pumping capacity of the secondary pump 9 to the successive successive stages of a treatment process taking place in the vacuum chamber 8.
  • the control device 33 can generate a high discharge pressure setpoint 32 during the first stage and a relatively low discharge pressure setpoint 32 for the second stage.
  • the evolution of the discharge pressure setpoint 32 can be adapted to each treatment process, by seeking at each step the optimization of the selective pumping capacity of the secondary pump 9 to optimize the treatment process.
  • FIG. 5 which illustrates a second more advanced embodiment of the device according to the invention, is now considered.
  • the device further comprises means for regulating the partial pressures of the gases in the vacuum chamber 8.
  • partial pressure sensors 34 are provided, able to determine the partial pressures of one or more gases of the gaseous mixture in the vacuum chamber 8, and to produce on their outputs 35 partial pressure data sent by a line 36 to a partial pressure controller 37.
  • a partial pressure controller 37 is furthermore provided, which thus receives the partial pressure data produced by the partial pressure sensors 34, which compares these data with a partial pressure setpoint 38, and which generates on its output 39 a signal of output which drives the second control and adjustment means 28 to adapt the selective pumping capacity of the secondary pump 9.
  • the partial pressure controller 37 compares the measured partial pressure data and the partial pressure reference data 38 by looking for the differences between the measured proportions of the gases and the corresponding proportions of the partial pressure setpoint 38. presence of a gap, the pressure controller part 37 generates on its output 39 a discharge pressure signal which drives the regulating means 29 to act on the discharge pressure of the secondary pump 9 to adapt the selective pumping capacity of the secondary pump 9 in the direction of a reducing the difference between the measured proportions of the gases and the corresponding proportions of the partial pressures setpoint 38.
  • the partial pressure sensors 34 communicate the measurements P1 and P2 to the partial pressure controller 37 which reports it. P1 / P2.
  • the partial pressure controller also receives, in the partial pressure setpoint 38, the pressures P10 and P20 for the same gases, and can calculate the ratio P10 / P20.
  • the partial pressure controller 37 determines the difference between the ratios P1 / P2 and P10 / P20, and deduces, based on data previously stored in memory, if the discharge pressure in the intermediate pipe 17 pump discharge Secondary 9 must be increased or decreased to reduce this difference.
  • the partial pressure controller 37 thus generates on its output 39 a discharge pressure setpoint.
  • the discharge pressure sensor 31 measures the discharge pressure in the intermediate pipe 17 and generates pressure measurement data.
  • the discharge pressure controller 30 receives the discharge pressure setpoint and the discharge pressure measurement data, and controls the regulating means 29 to reduce the difference between the discharge pressure setpoint and the pressure measurement data. of repression.
  • the partial pressure controller can directly control the regulating means 29 to reduce the difference between a partial pressure setpoint and the partial pressure measurement.
  • the device according to the invention can find various applications during the process steps in which there is an interest in adjusting the proportion of gases in a gaseous mixture.
  • the possibility of acting on the selective pumping capacity of the secondary pump may also be useful in cases where it is desired to compensate for the drifts of a system for pumping gases in a vacuum chamber.
  • Another interesting application lies in the compensation of possible variations in the pumping characteristics of a secondary pump, either because of aging over time, or because of progressive deposits of material on the walls of the pump, or even makes a replacement of one pump by another.
  • the heavy gases resulting from the etching reactions can advantageously be evacuated preferentially by an increase in the discharge pressure of the secondary pump. This results in a significant increase in the etching rate.
  • the control system of the discharge pressure of the secondary pump may be carried out in open loop, that is to say without servocontrolling, or in closed loop by the servocontrol of the pressure given by a sensor located on the line of empty at the outlet of the secondary pump.
  • the slaving can also be performed in a global manner by measuring the partial pressures in the vacuum chamber, for example by mass spectrometers, optical spectrometers, and by acting on the output pressure control element. to obtain the desired concentration in the vacuum chamber.
  • the partial pressure setpoint of the gases can result from real-time measurements of various parameters of a process taking place in the vacuum chamber, or of delayed time indicators.
  • the deferred time indicators may be measures related to a process optimization, for example the attack speed, the contamination measurement, the drift of a process parameter in the case of an indicator linked to repackaging.
  • a device acts on the discharge pressure of the secondary pump 9 in the pressure range where these modifications cause significant variations in the pumping speed of the gases. selectively according to the nature of the gases, because of the intrinsic characteristics of turbomolecular, molecular or hybrid pumps.
  • the device By applying variations of the partial pumping rates, the device also causes a variation of the total pumping rate in the vacuum chamber, and therefore a possible change in the total pressure in the vacuum chamber.
  • the device therefore acts, simultaneously, on the means for regulating the suction pressure upstream of the secondary pump 9, to readjust the total pressure in the vacuum chamber and to keep it constant.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Flow Control (AREA)
  • Inorganic Insulating Materials (AREA)
  • Applications Or Details Of Rotary Compressors (AREA)

Abstract

A main regulation valve (24) controls total pressure of gas mixture in the vacuum enclosure (8) as a function of total pressure set point. An auxiliary regulation valve (29) held below a secondary pump (9), is controlled as a function of delivery pressure set point to modify delivery pressure of the pump and to adapt its pumping capacity selectively for adjusting the proportions of gases in mixture of the enclosure. An independent claim is also included for the controlling method of low pressure gas mixture in vacuum enclosure.

Description

La présente invention concerne le contrôle de l'atmosphère dans une enceinte à vide telle qu'une chambre de procédés utilisée dans la fabrication des semi-conducteurs.The present invention relates to the control of the atmosphere in a vacuum chamber such as a process chamber used in the manufacture of semiconductors.

Les procédés mis en oeuvre dans les enceintes à vide pour la fabrication de semi-conducteurs nécessitent l'établissement et le contrôle d'une atmosphère à basse pression constituée généralement par des mélanges de gaz.The processes used in vacuum enclosures for the manufacture of semiconductors require the establishment and control of a low pressure atmosphere generally consisting of gas mixtures.

Dans le mélange de gaz, se trouvent des gaz actifs destinés à réagir sur des substrats présents dans l'enceinte à vide, et se trouvent des gaz issus des réactions. Il est donc nécessaire de pomper en permanence l'atmosphère de l'enceinte à vide, pour évacuer les gaz de réaction, et d'introduire en permanence des gaz actifs dans l'enceinte à vide pour poursuivre les réactions.In the gas mixture, there are active gases for reacting on substrates present in the vacuum chamber, and are gases from the reactions. It is therefore necessary to constantly pump the atmosphere of the vacuum chamber, to evacuate the reaction gases, and to continuously introduce active gases into the vacuum chamber to continue the reactions.

Les réactions sont généralement produites dans un plasma, et elles nécessitent un contrôle permanent de la pression gazeuse globale dans l'enceinte à vide. Ainsi, la pression gazeuse globale est un paramètre important dans les procédés, et on utilise pour cela couramment des moyens de contrôle et d'ajustement adaptés pour contrôler et ajuster la pression gazeuse totale du mélange gazeux dans l'enceinte à vide.The reactions are generally produced in a plasma, and they require a permanent control of the global gas pressure in the vacuum chamber. Thus, the overall gas pressure is an important parameter in the processes, and it is commonly used control means and adjustment adapted to control and adjust the total gas pressure of the gas mixture in the vacuum chamber.

Pour pomper les gaz hors de l'enceinte à vide, on utilise généralement au moins une pompe secondaire adaptée aux basses pressions à obtenir, au moins une pompe primaire adaptée pour refouler à la pression atmosphérique, une première canalisation dont une entrée est raccordée à une sortie de l'enceinte à vide et dont une sortie est raccordée à une aspiration de la pompe secondaire, et une canalisation intermédiaire dont une entrée est raccordée à un refoulement de la pompe secondaire et dont une sortie est raccordée à une aspiration de la pompe primaire. Cette disposition est rendue nécessaire par le fait que l'atmosphère dans l'enceinte à vide est à très basse pression, et que les technologies de pompe nécessitent généralement la mise en série d'une pompe secondaire et d'une pompe primaire.In order to pump the gases out of the vacuum chamber, at least one secondary pump adapted to the low pressures to obtain, at least one primary pump adapted to discharge at atmospheric pressure, a first pipe having an inlet connected to a pipe is used. outlet of the vacuum chamber and an outlet of which is connected to a suction of the secondary pump, and an intermediate pipe whose inlet is connected to a discharge of the secondary pump and an outlet of which is connected to a suction of the primary pump . This arrangement is made necessary by the fact that the atmosphere in the vacuum chamber is at very low pressure, and that the pump technologies generally require the serialization of a secondary pump and a primary pump.

Les dispositifs connus présentent toutefois des inconvénients, par le fait que les proportions des gaz présents dans une enceinte à vide telle qu'une chambre de procédés ne sont pas maîtrisées. Par exemple, dans le cas du procédé de gravure aluminium, les gaz injectés sont craqués par un plasma, puis ils réagissent avec les différents matériaux présents sur le substrat. La concentration des résidus gazeux va dépendre directement de la façon dont la pompe secondaire va pomper les différentes espèces, ce qui peut dans certains cas ne pas être optimum dans le procédé. En effet, selon la masse et la taille des molécules gazeuses présentes dans le mélange, la pompe secondaire peut évacuer en priorité les gaz actifs qui sont utiles à la réalisation du procédé, et laisser dans l'enceinte à vide les gaz inactifs qui résultent de la réaction des gaz actifs avec les matériaux et qui sont donc inutiles à la réalisation du procédé. On comprend que cela a pour effet de ralentir voire de dégrader les performances du procédé.The known devices have disadvantages, however, in that the proportions of gases present in a vacuum chamber such as a process chamber are not controlled. For example, in the case of the aluminum etching process, the injected gases are cracked by a plasma, and then they react with the different materials present on the substrate. The concentration of gaseous residues will depend directly on how the secondary pump will pump the different species, which may in some cases not be optimum in the process. In fact, depending on the mass and the size of the gaseous molecules present in the mixture, the secondary pump can evacuate, in priority, the active gases which are useful for carrying out the process, and leave in the vacuum chamber the inactive gases which result from the reaction of the active gases with the materials and which are therefore useless for carrying out the process. It is understood that this has the effect of slowing or even degrading the performance of the process.

Il y a donc un besoin pour favoriser l'évacuation des gaz inactifs hors des enceintes à vide telles que les chambres de procédés, en évitant autant que possible l'évacuation des gaz actifs qui n'ont pas encore réagi.There is therefore a need to promote the evacuation of inactive gases from vacuum chambers such as process chambers, avoiding as much as possible the evacuation of active gases that have not yet reacted.

Les moyens de contrôle et de régulation de la pression gazeuse globale dans une enceinte à vide comprennent généralement différents moyens tels qu'une injection de gaz dans l'enceinte à vide, et une vanne de régulation placée dans la première canalisation en amont de la pompe secondaire, c'est-à-dire en sortie de l'enceinte à vide. Il se trouve qu'une telle vanne de régulation tend à favoriser le pompage des gaz légers, qui sont généralement les gaz actifs, et tend à freiner l'évacuation des gaz lourds tels que les gaz issus des réactions. Cela est donc défavorable au but recherché.The means for controlling and regulating the overall gas pressure in a vacuum chamber generally comprise various means such as a gas injection into the vacuum chamber, and a control valve placed in the first pipe upstream of the pump. secondary, that is to say at the output of the vacuum chamber. It happens that such a control valve tends to promote the pumping of light gases, which are generally active gases, and tends to slow down the evacuation of heavy gases such as the gases resulting from the reactions. This is therefore unfavorable to the aim pursued.

Pour éviter cela, le document US 6,200,107 propose de déplacer la vanne de régulation et de la disposer dans une canalisation de dérivation en parallèle sur la pompe secondaire, entre la première canalisation et la canalisation intermédiaire. Selon ce document, la vanne de régulation constitue ainsi le moyen unique permettant de réguler la pression dans une chambre de procédés, et favorise l'évacuation des gaz inactifs issus des réactions dans la chambre.To avoid this, the document US 6,200,107 proposes to move the regulating valve and arrange it in a bypass line in parallel on the secondary pump, between the first pipe and the intermediate pipe. According to this document, the control valve thus constitutes the unique means for regulating the pressure in a process chamber, and promotes the evacuation of the inactive gases from the reactions in the chamber.

Ce même document dissuade clairement d'utiliser une vanne de régulation en amont de la pompe secondaire, ou une vanne de régulation en aval de la pompe secondaire, ou une injection de gaz dans la canalisation intermédiaire, ou même une variation de la vitesse de rotation de la pompe primaire.This same document clearly discourages the use of a control valve upstream of the secondary pump, or a control valve downstream of the secondary pump, or a gas injection into the intermediate pipe, or even a variation of the rotational speed. of the primary pump.

La solution proposée dans ce document ne donne pas satisfaction, par le fait qu'une action sur la vanne de régulation placée dans la canalisation de dérivation produit nécessairement à la fois une variation de la pression globale dans l'enceinte à vide, et une modification des proportions des gaz dans l'enceinte à vide. Il n'est alors pas possible d'optimiser un procédé par un contrôle complet à la fois de la pression globale gazeuse dans l'enceinte à vide et des proportions des gaz dans le mélange gazeux dans l'enceinte à vide.The solution proposed in this document is not satisfactory, in that an action on the control valve placed in the bypass pipe necessarily produces both a variation of the overall pressure in the vacuum chamber, and a modification proportions of gases in the vacuum chamber. It is then not possible to optimize a process by a complete control of both the global gas pressure in the vacuum chamber and the proportions of the gases in the gaseous mixture in the vacuum chamber.

Cette solution présente en outre l'inconvénient majeur de polluer la chambre de procédés en terme de particules, car elle réinjecte du gaz qui a circulé à travers la pompe secondaire et qui s'est donc potentiellement chargé en particules.This solution also has the major disadvantage of polluting the process chamber in terms of particles, because it reinjects gas that has circulated through the secondary pump and therefore potentially loaded with particles.

Semblables dispositifs sont également connus de US 5 944 049 A et FR 2 854 667 A .Similar devices are also known to US 5,944,049 A and FR 2 854 667 A .

Le problème proposé par la présente invention est de trouver un autre moyen pour établir et contrôler un mélange gazeux à faible pression dans une enceinte à vide, qui permette à la fois de contrôler la pression gazeuse globale dans l'enceinte à vide et de contrôler les proportions des différents gaz dans le mélange gazeux présent dans l'enceinte à vide.The problem proposed by the present invention is to find another way to establish and control a low pressure gas mixture in a vacuum chamber, which allows both to control the overall gas pressure in the vacuum chamber and control the proportions of the different gases in the gaseous mixture present in the vacuum chamber.

L'invention vise ainsi à optimiser les procédés mis en oeuvre dans les enceintes à vide, tels que les procédés de fabrication de semi-conducteurs.The invention thus aims to optimize the processes used in vacuum enclosures, such as semiconductor manufacturing processes.

Un autre but de l'invention est d'éviter tout risque de pollution supplémentaire susceptible d'être produite par le dispositif selon l'invention.Another object of the invention is to avoid any risk of additional pollution that may be produced by the device according to the invention.

Pour cela, la présente invention résulte de l'observation selon laquelle les pompes secondaires de type moléculaire, turbomoléculaire ou hybride ont une capacité de pompage qui varie en fonction de la pression en sortie de la pompe, et cette variation de capacité de pompage n'est pas identique pour tous les gaz. Il en résulte que les pompes effectuent un pompage sélectif modifiable par la pression de sortie.For this, the present invention results from the observation according to which the secondary pumps of molecular, turbomolecular or hybrid type have a pumping capacity which varies as a function of the pressure at the outlet of the pump, and this variation of pumping capacity does not vary. is not the same for all gases. As a result, the pumps perform a selective pumping that can be modified by the outlet pressure.

Ainsi, l'idée qui est à la base de l'invention est qu'en choisissant correctement la pression de sortie de la pompe secondaire, on peut agir de façon favorable sur les pressions partielles des gaz dans l'enceinte à vide pour contrôler les paramètres d'un procédé.Thus, the idea underlying the invention is that by correctly choosing the output pressure of the secondary pump, it is possible to act favorably on the partial pressures of the gases in the vacuum chamber to control the parameters of a process.

Partant de cette idée, l'invention propose un dispositif pour établir et contrôler un mélange gazeux approprié à faible pression dans une enceinte à vide, comprenant :

  • au moins une pompe secondaire de type moléculaire, turbomoléculaire ou hybride,
  • au moins une pompe primaire, adaptée pour refouler à la pression atmosphérique,
  • une première canalisation dont une entrée est raccordée à une sortie de l'enceinte à vide et dont une sortie est raccordée à une aspiration de la pompe secondaire,
  • une canalisation intermédiaire dont une entrée est raccordée à un refoulement de la pompe secondaire et dont une sortie est raccordée à une aspiration de la pompe primaire,
  • des premiers moyens de contrôle et d'ajustement adaptés pour contrôler et ajuster la pression gazeuse totale du mélange gazeux dans l'enceinte à vide en fonction d'une consigne de pression totale,
  • des seconds moyens de contrôle et d'ajustement, distincts des premiers moyens de contrôle et d'ajustement, disposés en aval de la pompe secondaire, et agissant sur la pression de refoulement de la pompe secondaire dans la gamme de pressions où les modifications de pression entraînent des variations sensibles de vitesses sélectives de pompage des différents gaz du mélange, de façon à adapter la capacité de pompage sélectif de la pompe secondaire et à ajuster ainsi les proportions des gaz du mélange gazeux dans l'enceinte à vide.
On the basis of this idea, the invention proposes a device for establishing and controlling a suitable low pressure gas mixture in a vacuum chamber, comprising:
  • at least one secondary pump of molecular, turbomolecular or hybrid type,
  • at least one primary pump, adapted to discharge at atmospheric pressure,
  • a first pipe having an inlet connected to an outlet of the vacuum chamber and an outlet of which is connected to a suction of the secondary pump,
  • an intermediate pipe whose inlet is connected to a discharge of the secondary pump and whose outlet is connected to a suction of the primary pump,
  • first control and adjustment means adapted to control and adjust the total gas pressure of the gaseous mixture in the vacuum chamber as a function of a total pressure setpoint,
  • second control and adjustment means, distinct from the first control and adjustment means, arranged downstream of the secondary pump, and acting on the discharge pressure of the secondary pump in the pressure range where the pressure changes cause significant variations in the selective pumping speeds of the different gases of the mixture, so as to adapt the selective pumping capacity of the secondary pump and thus adjust the proportions of the gaseous mixture gases in the vacuum chamber.

Par le fait que l'on combine des premiers moyens de contrôle et d'ajustement qui maintiennent en permanence la pression gazeuse totale du mélange gazeux dans l'enceinte à vide, et des seconds moyens de contrôle et d'ajustement qui ajustent les proportions des gaz, on obtient un contrôle complet de l'atmosphère dans l'enceinte à vide, ce qui permet notamment d'optimiser réellement les procédés mis en oeuvre dans l'enceinte à vide.In that first control and adjustment means are combined which permanently maintain the total gas pressure of the gaseous mixture in the vacuum chamber, and second control and adjustment means which adjust the proportions of the gaseous mixture in the vacuum chamber. gas, we obtain a complete control of the atmosphere in the vacuum chamber, which allows in particular to really optimize the processes implemented in the vacuum chamber.

De préférence, les premiers moyens de contrôle et d'ajustement sont disposés en amont de la pompe secondaire, et comprennent une vanne de régulation interposée dans la première canalisation et/ou des moyens d'injection contrôlée de gaz dans l'enceinte à vide.Preferably, the first control and adjustment means are arranged upstream of the secondary pump, and comprise a control valve interposed in the first pipe and / or controlled gas injection means in the vacuum chamber.

Selon un premier mode de réalisation, les seconds moyens de contrôle et d'ajustement comprennent une vanne de régulation interposée dans la canalisation intermédiaire.According to a first embodiment, the second control and adjustment means comprise a control valve interposed in the intermediate pipe.

Selon un second mode de réalisation, les seconds moyens de contrôle et d'ajustement comprennent un dispositif d'injection de gaz pour injecter un gaz neutre dans la canalisation intermédiaire.According to a second embodiment, the second control and adjustment means comprise a gas injection device for injecting a neutral gas into the intermediate pipe.

Selon un troisième mode de réalisation, les seconds moyens de contrôle et d'ajustement comprennent un moyen de pilotage de vitesse pour piloter la vitesse de la pompe primaire.According to a third embodiment, the second control and adjustment means comprise a speed control means for controlling the speed of the primary pump.

Selon l'invention, dans les seconds moyens de contrôle et d'ajustement, on pourra combiner une vanne de régulation et/ou des moyens d'injection de gaz et/ou une variation de vitesse de pompe primaire.According to the invention, in the second control and adjustment means, it is possible to combine a control valve and / or gas injection means and / or a primary pump speed variation.

Selon une première possibilité, le dispositif peut agir en boucle fermée, en fonction d'informations mesurées dans l'enceinte à vide elle-même. Pour cela, le dispositif comprend :

  • des capteurs de pressions partielles, aptes à déterminer les pressions partielles d'un ou plusieurs gaz du mélange gazeux dans l'enceinte à vide, et à produire des données de pressions partielles,
  • un contrôleur de pressions partielles, recevant les données de pressions partielles produites par les capteurs de pressions partielles, comparant ces données à une consigne de pressions partielles en recherchant les écarts entre les proportions mesurées des gaz et les proportions correspondantes de la consigne de pressions partielles, et générant un signal de sortie qui pilote les seconds moyens de contrôle et d'ajustement pour adapter la capacité de pompage sélectif de la pompe secondaire dans le sens qui réduit l'écart entre les proportions mesurées des gaz et les proportions correspondantes de la consigne de pressions partielles.
According to a first possibility, the device can act in a closed loop, as a function of information measured in the vacuum chamber itself. For this, the device comprises:
  • partial pressure sensors, able to determine the partial pressures of one or more gases of the gaseous mixture in the vacuum chamber, and to produce partial pressure data,
  • a partial pressure controller, receiving the partial pressure data produced by the partial pressure sensors, comparing these data at a partial pressure setpoint by searching for the differences between the measured proportions of the gases and the corresponding proportions of the partial pressure setpoint, and generating an output signal which drives the second control and adjustment means to adapt the capacity of the selective pumping of the secondary pump in the direction which reduces the difference between the measured proportions of the gases and the corresponding proportions of the partial pressure setpoint.

Selon une possibilité de ce mode de réalisation, le dispositif peut être tel que :

  • le contrôleur de pressions partielles génère sur sa sortie une consigne de pression de refoulement,
  • un capteur de pression de refoulement mesure la pression de refoulement dans la canalisation intermédiaire et génère des données de mesure de pression de refoulement,
  • un contrôleur de pression de refoulement reçoit la consigne de pression de refoulement et les données de pression de refoulement, et pilote des moyens de régulation de la pression de refoulement pour réduire l'écart entre la consigne de pression de refoulement et les données de mesure de la pression de refoulement.
According to a possibility of this embodiment, the device may be such that:
  • the partial pressure controller generates at its output a discharge pressure setpoint,
  • a discharge pressure sensor measures the discharge pressure in the intermediate pipe and generates pressure measurement data,
  • a discharge pressure controller receives the discharge pressure setpoint and the discharge pressure data, and controls discharge pressure control means to reduce the difference between the discharge pressure setpoint and the measurement data of the discharge pressure. the discharge pressure.

En alternative, le dispositif peut agir en boucle ouverte, recevant par exemple une consigne provenant d'un moyen de commande externe qui gère le procédé mis en oeuvre dans l'enceinte à vide.Alternatively, the device can act in an open loop, for example receiving a setpoint from an external control means that manages the method implemented in the vacuum chamber.

Dans tous les cas, le dispositif selon l'invention peut comprendre en outre un dispositif de commande qui pilote les seconds moyens de contrôle et d'ajustement selon un programme spécifique pour adapter la capacité de pompage sélectif de la pompe secondaire aux différentes étapes successives d'un procédé de traitement se déroulant dans l'enceinte à vide.In any case, the device according to the invention may furthermore comprise a control device which controls the second control and adjustment means according to a specific program in order to adapt the selective pumping capacity of the secondary pump to the different successive stages of operation. a treatment process taking place in the vacuum chamber.

Selon un autre aspect, l'invention propose un procédé pour établir et contrôler un mélange gazeux approprié à faible pression dans une enceinte à vide à l'aide d'un dispositif tel que défini ci-dessus. Dans ce procédé, on agit sur la pression de refoulement de la pompe secondaire pour adapter sa capacité de pompage sélectif et pour ajuster ainsi les proportions des gaz dans le mélange gazeux.In another aspect, the invention provides a method for establishing and controlling a suitable low pressure gas mixture in a vacuum chamber using a device as defined above. In this method, it acts on the discharge pressure of the secondary pump to adapt its selective pumping capacity and to thereby adjust the proportions of gases in the gas mixture.

Selon un premier mode de réalisation, on agit sur la pression de refoulement en modifiant la conductance de la canalisation intermédiaire.According to a first embodiment, the discharge pressure is modified by modifying the conductance of the intermediate pipe.

Selon un deuxième mode de réalisation, on agit sur la pression de refoulement en injectant un gaz neutre dans la canalisation intermédiaire.According to a second embodiment, it acts on the discharge pressure by injecting a neutral gas into the intermediate pipe.

Selon un troisième mode de réalisation, on agit sur la pression de refoulement en modifiant la vitesse de la pompe primaire.According to a third embodiment, it acts on the discharge pressure by changing the speed of the primary pump.

Selon l'invention, les trois modes d'action ci-dessus peuvent être combinés ensemble ou deux par deux.According to the invention, the three modes of action above can be combined together or two by two.

Dans tous les cas, on peut avantageusement agir sur la pression de refoulement de la pompe secondaire en fonction des étapes successives d'un procédé de traitement se déroulant dans l'enceinte à vide.In all cases, it is advantageous to act on the discharge pressure of the secondary pump according to the successive steps of a treatment process taking place in the vacuum chamber.

Selon une application possible, le procédé selon l'invention agit sur la pression de refoulement de la pompe secondaire dans le sens d'une augmentation de pompage d'humidité pendant un processus de vidage contrôlé de l'enceinte à vide.According to one possible application, the method according to the invention acts on the discharge pressure of the secondary pump in the direction of an increase in pumping of moisture during a controlled emptying process of the vacuum chamber.

Selon une autre application, le procédé agit sur la pression de refoulement de la pompe secondaire dans le sens d'un maintien constant de la pression partielle d'au moins un gaz dans l'enceinte à vide.According to another application, the process acts on the discharge pressure of the secondary pump in the direction of a constant maintenance of the partial pressure of at least one gas in the vacuum chamber.

Le dispositif défini ci-dessus peut trouver application pour la compensation des variations de caractéristiques de pompage d'une pompe secondaire. Ces variations peuvent se produire dans le temps par suite de dépôts successifs sur les parois de la pompe, ou peuvent se produire lors d'un changement d'une pompe qui doit être remplacée par une autre.The device defined above may find application for the compensation of variations in pumping characteristics of a secondary pump. These variations may occur over time as a result of successive deposits on the walls of the pump, or may occur when changing from one pump to be replaced by another.

Une application particulièrement intéressante est l'évacuation préférentielle des gaz lourds dans les chambres de procédés de gravure sèche dans la fabrication de semi-conducteurs ou de microsystèmes électromécaniques (MEMS). On peut ainsi augmenter sensiblement la vitesse de gravure.A particularly interesting application is the preferential evacuation of heavy gases in the chambers of dry etching processes in the manufacture of semiconductors or electromechanical microsystems (MEMS). It is thus possible to substantially increase the etching rate.

Une autre application intéressante peut être de maîtriser la qualité de dépôts CVD (dépôt chimique en phase vapeur) par action sur la pression de refoulement de la pompe secondaire.Another interesting application may be to control the quality of CVD (Chemical Vapor Deposition) deposits by acting on the discharge pressure of the secondary pump.

Le dispositif peut trouver également une application pour compenser les dérives d'un système de pompage des gaz dans une enceinte à vide, dérives en tous genres pouvant se produire pour toutes raisons connues ou inconnues.The device can also find an application to compensate for the drifts of a gas pumping system in a vacuum chamber, drifts of all kinds that can occur for any known or unknown reasons.

D'autres objets, caractéristiques et avantages de la présente invention ressortiront de la description suivante de modes de réalisation particuliers, faite en relation avec les figures jointes, parmi lesquelles :

  • la figure 1 est une vue schématique d'un dispositif selon un mode de réalisation de la présente invention ;
  • la figure 2 illustre un mode de réalisation des seconds moyens de contrôle et d'ajustement selon l'invention ;
  • la figure 3 illustre un autre mode de réalisation des seconds moyens de contrôle et d'ajustement selon l'invention ;
  • la figure 4 illustre un autre mode de réalisation des seconds moyens de contrôle et d'ajustement selon l'invention ;
  • la figure 5 est une vue schématique illustrant un dispositif selon un second mode de réalisation de l'invention ;
  • la figure 6 illustre les pressions partielles d'un mélange de deux gaz dans une enceinte à vide à pression totale constante pour deux pressions différentes de sortie d'une pompe turbomoléculaire qui pompe les gaz ; et
  • la figure 7 illustre les courbes de variation des vitesses de pompage de trois gaz différents en fonction de la pression de sortie dans une pompe turbomoléculaire.
Other objects, features and advantages of the present invention will become apparent from the following description of particular embodiments, with reference to the accompanying figures, in which:
  • Figure 1 is a schematic view of a device according to an embodiment of the present invention;
  • FIG. 2 illustrates an embodiment of the second control and adjustment means according to the invention;
  • FIG. 3 illustrates another embodiment of the second control and adjustment means according to the invention;
  • FIG. 4 illustrates another embodiment of the second control and adjustment means according to the invention;
  • Figure 5 is a schematic view illustrating a device according to a second embodiment of the invention;
  • FIG. 6 illustrates the partial pressures of a mixture of two gases in a constant total pressure vacuum chamber for two different outlet pressures of a turbomolecular pump which pumps the gases; and
  • FIG. 7 illustrates the variation curves of the pumping speeds of three different gases as a function of the outlet pressure in a turbomolecular pump.

On considère tout d'abord les figures 6 et 7, qui illustrent la propriété particulière des pompes moléculaires, turbomoléculaires ou hybrides sur laquelle est basée la présente invention.Figures 6 and 7, which illustrate the particular property of the molecular, turbomolecular or hybrid pumps on which the present invention is based, are first considered.

La figure 6 illustre les pressions partielles d'un mélange de deux gaz à pression totale constante à l'entrée d'une pompe turbomoléculaire, données en unités arbitraires, pour deux pressions différentes de sortie de la pompe turbomoléculaire. La vitesse de la pompe turbomoléculaire est constante.FIG. 6 illustrates the partial pressures of a mixture of two gases with constant total pressure at the inlet of a turbomolecular pump, given in arbitrary units, for two different outlet pressures of the turbomolecular pump. The speed of the turbomolecular pump is constant.

La zone 1 illustre la pression partielle de l'argon pour une pression de sortie de 2,155 Torrs en sortie de la pompe turbomoléculaire, tandis que la zone 2 illustre la pression partielle de l'hélium dans les mêmes conditions, pour un mélange d'argon et d'hélium à une pression totale donnée.Zone 1 illustrates the partial pressure of argon for an outlet pressure of 2.155 Torr at the outlet of the turbomolecular pump, while Zone 2 illustrates the partial pressure of helium under the same conditions, for a mixture of argon and helium at a given total pressure.

Les zones 3 et 4 illustrent respectivement, pour mélange des mêmes gaz argon et hélium ayant la même pression totale, les pressions partielles respectives de l'argon et de l'hélium pour une pression de sortie de 0,359 Torrs en sortie de la pompe turbomoléculaire.Zones 3 and 4 respectively illustrate, for mixing the same argon and helium gases having the same total pressure, the respective partial pressures of argon and helium for an outlet pressure of 0.359 Torr at the outlet of the turbomolecular pump.

On constate que, à la pression de sortie de 2,155 Torrs, la pression partielle d'argon est un peu inférieure à la pression partielle d'hélium. Par contre, à la pression de sortie de 0,359 Torrs, la pression partielle d'argon est beaucoup plus élevée, tandis que la pression partielle d'hélium est beaucoup plus petite.It can be seen that at the outlet pressure of 2.155 Torr the argon partial pressure is a little lower than the helium partial pressure. On the other hand, at the outlet pressure of 0.359 Torr, the argon partial pressure is much higher, while the helium partial pressure is much smaller.

Si l'on considère maintenant la figure 7, pour chacun des gaz hélium, azote et argon, les courbes 5, 6 et 7 représentent respectivement les vitesses de pompage, en litres par seconde, de l'hélium, de l'azote ou de l'argon, en fonction de la pression de sortie d'une pompe turbomoléculaire.Referring now to FIG. 7, for each of the helium, nitrogen and argon gases, curves 5, 6 and 7 respectively represent the pumping rates, in liters per second, of helium, nitrogen or argon, depending on the outlet pressure of a turbomolecular pump.

On constate que les vitesses de pompage sont toutes trois décroissantes, pour les trois gaz hélium, azote et argon, mais que les variations diffèrent. Par exemple, la vitesse de pompage de l'argon est relativement constante jusqu'à une pression de sortie d'environ 0,8 millibars, et décroît assez rapidement ensuite. La vitesse de pompage de l'azote est relativement constante jusqu'à une pression de sortie de 0,4 millibars, et décroît ensuite plus rapidement que la vitesse de pompage de l'argon. Enfin, la vitesse de pompage de l'hélium est fortement décroissante dès la pression de sortie de 0,2 millibars.It can be seen that the pumping rates are all three decreasing, for the three helium, nitrogen and argon gases, but that the variations different. For example, the pumping rate of argon is relatively constant up to an outlet pressure of about 0.8 millibars, and decreases fairly rapidly thereafter. The nitrogen pumping rate is relatively constant up to an output pressure of 0.4 millibars, and then decreases more rapidly than the pumping rate of argon. Finally, the pumping speed of helium is strongly decreasing at the outlet pressure of 0.2 millibars.

Par conséquent, en fixant par exemple une pression de sortie de 0,6 millibars, on voit que les vitesses de pompage de l'azote et de l'argon sont sensiblement égales et relativement élevées, tandis que la vitesse de pompage de l'hélium sera très inférieure. Par contre, pour une pression de sortie d'environ 0,2 millibars, les vitesses de pompage des trois gaz seront relativement voisines les unes des autres.Therefore, for example, by setting an outlet pressure of 0.6 millibars, it is seen that the nitrogen and argon pumping rates are substantially equal and relatively high, while the helium pumping rate is will be very inferior. On the other hand, for an outlet pressure of approximately 0.2 millibars, the pumping speeds of the three gases will be relatively close to one another.

Ainsi, en modifiant la pression de sortie de la pompe turbomoléculaire, on modifie la capacité de pompage sélectif de la pompe, pour favoriser le pompage de l'un ou l'autre des gaz.Thus, by modifying the outlet pressure of the turbomolecular pump, the selective pumping capacity of the pump is modified to favor the pumping of one or the other of the gases.

La présente invention met à profit ce phénomène pour améliorer l'établissement et le contrôle d'un mélange gazeux à faible pression dans une enceinte à vide.The present invention takes advantage of this phenomenon to improve the establishment and control of a low pressure gas mixture in a vacuum chamber.

On considère maintenant la figure 1, qui illustre une structure générale d'un dispositif selon un mode de réalisation de l'invention. Le dispositif est destiné à établir et contrôler un mélange gazeux approprié à faible pression dans une enceinte à vide 8 telle qu'une chambre de procédés pour fabrication de composants semi-conducteurs, et comprend une pompe secondaire 9 de type moléculaire, turbomoléculaire ou hybride, une pompe primaire 10 adaptée pour refouler à une sortie 11 à la pression atmosphérique, une première canalisation 12 dont une entrée 13 est raccordée à une sortie 14 de l'enceinte à vide 8 et dont une sortie 15 est raccordée à une aspiration 16 de la pompe secondaire 9, et une canalisation intermédiaire 17 dont une entrée 18 est raccordée à un refoulement 19 de la pompe secondaire 9 et dont une sortie 20 est raccordée à une aspiration 21 de la pompe primaire 10.FIG. 1, which illustrates a general structure of a device according to one embodiment of the invention, is now considered. The device is intended to establish and control a suitable gas mixture at low pressure in a vacuum chamber 8 such as a process chamber for manufacturing semiconductor components, and comprises a secondary pump 9 of molecular, turbomolecular or hybrid type, a primary pump 10 adapted to discharge at an outlet 11 at atmospheric pressure, a first pipe 12, an inlet 13 of which is connected to an outlet 14 of the vacuum enclosure 8 and an outlet 15 of which is connected to a suction 16 of the secondary pump 9, and an intermediate pipe 17, an inlet 18 is connected to a discharge 19 of the secondary pump 9 and an outlet 20 is connected to a suction 21 of the primary pump 10.

Le dispositif comprend des premiers moyens de contrôle et d'ajustement 22, adaptés pour contrôler et ajuster la pression gazeuse totale du mélange gazeux dans l'enceinte à vide 8.The device comprises first control and adjustment means 22, adapted to control and adjust the total gas pressure of the gas mixture in the vacuum chamber 8.

En pratique, les premiers moyens de contrôle et d'ajustement 22 peuvent comprendre des moyens d'injection contrôlée de gaz 23 pour injecter un gaz dans l'enceinte à vide 8, et/ou une vanne de régulation 24 interposée dans la première canalisation 12 et pilotée par un contrôleur de pression d'enceinte 25 en fonction des données de mesure de pression totale produites par une jauge de pression 26 dans l'enceinte à vide 8. Le contrôleur de pression d'enceinte 25 peut par exemple être un microcontrôleur programmé pour maintenir constante la pression totale dans l'enceinte à vide 8, en fonction d'une consigne de pression totale 27.In practice, the first control and adjustment means 22 may comprise controlled gas injection means 23 for injecting a gas into the vacuum chamber 8, and / or a regulation valve 24 interposed in the first pipe 12 and controlled by a speaker pressure controller 25 according to total pressure measurement data produced by a pressure gauge 26 in the vacuum chamber 8. The enclosure pressure controller 25 may for example be a microcontroller programmed to keep constant the total pressure in the vacuum chamber 8 , as a function of a total pressure setpoint 27.

Selon l'invention, le dispositif comprend en outre des seconds moyens de contrôle et d'ajustement 28, distincts des premiers moyens de contrôle et d'ajustement 22, disposés en aval de la pompe secondaire 9, et agissant sur la pression de refoulement de la pompe secondaire 9 dans la canalisation intermédiaire 17, dans la gamme de pressions où les modifications de pression entraînent des variations sensibles de la vitesse sélective de pompage des différents gaz du mélange par la pompe secondaire 9. De la sorte, on adapte la capacité de pompage sélectif de la pompe secondaire 9, et on peut ajuster ainsi les proportions des gaz du mélange gazeux dans l'enceinte à vide 8.According to the invention, the device further comprises second control and adjustment means 28, distinct from the first control and adjustment means 22, arranged downstream of the secondary pump 9, and acting on the discharge pressure of the secondary pump 9 in the intermediate pipe 17, in the pressure range where the pressure changes cause significant variations in the selective pumping speed of the different gases of the mixture by the secondary pump 9. In this way, the capacity of the selective pumping of the secondary pump 9, and it is possible to adjust the proportions of the gases of the gaseous mixture in the vacuum chamber 8.

En pratique, les seconds moyens de contrôle et d'ajustement 28 peuvent comprendre un moyen de régulation 29 contrôlant la conductance de la canalisation intermédiaire 17, piloté par un contrôleur de pression de refoulement 30 qui reçoit une consigne de pression de refoulement 32 et des données de pression de sortie produites par une jauge de pression de refoulement 31 dans la canalisation intermédiaire 17.In practice, the second control and adjustment means 28 may comprise a regulation means 29 controlling the conductance of the intermediate pipe 17, controlled by a discharge pressure controller 30 which receives a discharge pressure setpoint 32 and data output pressure produced by a discharge pressure gauge 31 in the intermediate pipe 17.

Sur les figures 2, 3 et 4 on a illustré trois modes de réalisation des seconds moyens de contrôle et d'ajustement. Dans chaque cas, on retrouve la pompe secondaire 9, la pompe primaire 10, le capteur de pression de refoulement 31, le contrôleur de pression de refoulement 30, et une consigne de pression de refoulement 32.FIGS. 2, 3 and 4 show three embodiments of the second control and adjustment means. In each case, there is the secondary pump 9, the primary pump 10, the discharge pressure sensor 31, the discharge pressure controller 30, and a discharge pressure setpoint 32.

Sur la figure 2, le moyen de régulation est une vanne de régulation 29a, interposée dans la canalisation intermédiaire 17.In FIG. 2, the regulating means is a regulating valve 29a interposed in the intermediate pipe 17.

Sur la figure 3, le moyen de régulation est un dispositif d'injection de gaz 29b pour injecter un gaz neutre tel que l'azote dans la canalisation intermédiaire 17.In FIG. 3, the regulating means is a gas injection device 29b for injecting a neutral gas such as nitrogen into the intermediate pipe 17.

Sur la figure 4, le moyen de régulation est un moyen de pilotage de vitesse 29c, pour faire varier la vitesse de rotation de la pompe primaire 10.In FIG. 4, the regulation means is a speed control means 29c for varying the rotation speed of the primary pump 10.

Chacun de ces modes de réalisation des moyens de régulation 29 peut être utilisé seul ou en combinaison avec un ou deux autres moyens de régulation.Each of these embodiments of the regulating means 29 may be used alone or in combination with one or two other regulating means.

Dans le mode de réalisation de la figure 1, on a prévu en outre un dispositif de commande 33 qui génère la consigne de pression de refoulement 32. Le dispositif de commande 33 pilote ainsi les seconds moyens de contrôle et d'ajustement 28, par exemple selon un programme spécifique enregistré dans une mémoire et qui adapte la capacité de pompage sélectif de la pompe secondaire 9 aux différentes étapes successives d'un procédé de traitement se déroulant dans l'enceinte à vide 8.In the embodiment of FIG. 1, there is further provided a control device 33 which generates the discharge pressure setpoint 32. The control device 33 thus controls the second control and adjustment means 28, for example according to a specific program recorded in a memory and which adapts the selective pumping capacity of the secondary pump 9 to the successive successive stages of a treatment process taking place in the vacuum chamber 8.

Supposons par exemple que le procédé de traitement dans l'enceinte à vide 8 comprend deux étapes successives de traitement par deux mélanges gazeux différents, et que dans la première étape il faille évacuer essentiellement des gaz lourds tandis que dans la seconde étape il faille évacuer essentiellement des gaz légers, le dispositif de commande 33 pourra générer une consigne de pression de refoulement 32 forte au cours de la première étape et une consigne de pression de refoulement 32 relativement faible pour la seconde étape.Suppose for example that the treatment process in the vacuum chamber 8 comprises two successive stages of treatment with two different gas mixtures, and that in the first stage it is necessary to evacuate essentially heavy gases while in the second stage it is necessary to evacuate essentially light gas, the control device 33 can generate a high discharge pressure setpoint 32 during the first stage and a relatively low discharge pressure setpoint 32 for the second stage.

L'évolution de la consigne de pression de refoulement 32 pourra être adaptée à chaque procédé de traitement, en recherchant à chaque étape l'optimisation de la capacité de pompage sélectif de la pompe secondaire 9 pour optimiser le procédé de traitement.The evolution of the discharge pressure setpoint 32 can be adapted to each treatment process, by seeking at each step the optimization of the selective pumping capacity of the secondary pump 9 to optimize the treatment process.

On considère maintenant la figure 5, qui illustre un second mode de réalisation plus perfectionné du dispositif selon l'invention.FIG. 5, which illustrates a second more advanced embodiment of the device according to the invention, is now considered.

Dans ce second mode de réalisation, on retrouve les éléments essentiels du premier mode de réalisation de la figure 1, et ces éléments sont repérés par les mêmes références numériques. Pour cette raison, on ne reprendra pas une description détaillée de ces mêmes moyens.In this second embodiment, we find the essential elements of the first embodiment of Figure 1, and these elements are identified by the same reference numerals. For this reason, we will not repeat a detailed description of these same means.

La différence réside dans le fait que le dispositif comprend en outre des moyens de régulation des pressions partielles des gaz dans l'enceinte à vide 8.The difference lies in the fact that the device further comprises means for regulating the partial pressures of the gases in the vacuum chamber 8.

On prévoit pour cela des capteurs de pressions partielles 34, aptes à déterminer les pressions partielles d'un ou plusieurs gaz du mélange gazeux dans l'enceinte à vide 8, et à produire sur leurs sorties 35 des données de pressions partielles envoyées par une ligne 36 à un contrôleur de pressions partielles 37.For this purpose, partial pressure sensors 34 are provided, able to determine the partial pressures of one or more gases of the gaseous mixture in the vacuum chamber 8, and to produce on their outputs 35 partial pressure data sent by a line 36 to a partial pressure controller 37.

On prévoit en outre un contrôleur de pressions partielles 37, qui reçoit ainsi les données de pressions partielles produites par les capteurs de pression partielle 34, qui compare ces données à une consigne de pressions partielles 38, et qui génère sur sa sortie 39 un signal de sortie qui pilote les seconds moyens de contrôle et d'ajustement 28 pour adapter la capacité de pompage sélectif de la pompe secondaire 9.A partial pressure controller 37 is furthermore provided, which thus receives the partial pressure data produced by the partial pressure sensors 34, which compares these data with a partial pressure setpoint 38, and which generates on its output 39 a signal of output which drives the second control and adjustment means 28 to adapt the selective pumping capacity of the secondary pump 9.

En pratique, le contrôleur de pressions partielles 37 compare les données de pressions partielles mesurées et les données de consigne de pressions partielles 38 en recherchant les écarts entre les proportions mesurées des gaz et les proportions correspondantes de la consigne de pressions partielles 38. Ensuite, en présence d'un écart, le contrôleur de pressions partielles 37 génère sur sa sortie 39 un signal de pression de refoulement qui pilote le moyen de régulation 29 pour agir sur la pression de refoulement de la pompe secondaire 9 pour adapter la capacité de pompage sélectif de la pompe secondaire 9 dans le sens d'une réduction de l'écart entre les proportions mesurées des gaz et les proportions correspondantes de la consigne de pressions partielles 38.In practice, the partial pressure controller 37 compares the measured partial pressure data and the partial pressure reference data 38 by looking for the differences between the measured proportions of the gases and the corresponding proportions of the partial pressure setpoint 38. presence of a gap, the pressure controller part 37 generates on its output 39 a discharge pressure signal which drives the regulating means 29 to act on the discharge pressure of the secondary pump 9 to adapt the selective pumping capacity of the secondary pump 9 in the direction of a reducing the difference between the measured proportions of the gases and the corresponding proportions of the partial pressures setpoint 38.

Par exemple, pour un mélange de deux gaz présents dans l'enceinte à vide 8 selon des pressions partielles mesurées respectives P1 et P2, les capteurs de pression partielle 34 communiquent les mesures P1 et P2 au contrôleur de pressions partielles 37 qui en fait le rapport P1/P2. Le contrôleur de pressions partielles reçoit également, dans la consigne de pressions partielles 38, les pressions P10 et P20 pour les mêmes gaz, et peut calculer le rapport P10/P20. Le contrôleur de pressions partielles 37 détermine alors l'écart entre les rapports P1/P2 et P10/P20, et en déduit, en fonction de données préalablement enregistrées en mémoire, si la pression de refoulement dans la canalisation intermédiaire 17 en refoulement de la pompe secondaire 9 doit être augmentée ou diminuée pour réduire cet écart.For example, for a mixture of two gases present in the vacuum chamber 8 at respective measured partial pressures P1 and P2, the partial pressure sensors 34 communicate the measurements P1 and P2 to the partial pressure controller 37 which reports it. P1 / P2. The partial pressure controller also receives, in the partial pressure setpoint 38, the pressures P10 and P20 for the same gases, and can calculate the ratio P10 / P20. The partial pressure controller 37 then determines the difference between the ratios P1 / P2 and P10 / P20, and deduces, based on data previously stored in memory, if the discharge pressure in the intermediate pipe 17 pump discharge Secondary 9 must be increased or decreased to reduce this difference.

Le contrôleur de pressions partielles 37 génère ainsi sur sa sortie 39 une consigne de pression de refoulement. Le capteur de pression de refoulement 31 mesure la pression de refoulement dans la canalisation intermédiaire 17 et génère des données de mesure de pression de refoulement. Le contrôleur de pression de refoulement 30 reçoit la consigne de pression de refoulement et les données de mesure de pression de refoulement, et pilote le moyen de régulation 29 pour réduire l'écart entre la consigne de pression de refoulement et les données de mesure de pression de refoulement.The partial pressure controller 37 thus generates on its output 39 a discharge pressure setpoint. The discharge pressure sensor 31 measures the discharge pressure in the intermediate pipe 17 and generates pressure measurement data. The discharge pressure controller 30 receives the discharge pressure setpoint and the discharge pressure measurement data, and controls the regulating means 29 to reduce the difference between the discharge pressure setpoint and the pressure measurement data. of repression.

En alternative, le contrôleur de pressions partielles peut piloter directement le moyen de régulation 29 pour réduire l'écart entre une consigne de pression partielle et la mesure de pression partielle.Alternatively, the partial pressure controller can directly control the regulating means 29 to reduce the difference between a partial pressure setpoint and the partial pressure measurement.

Le dispositif selon l'invention peut trouver des applications diverses, au cours des étapes de procédés dans lesquels il y a un intérêt à adapter la proportion des gaz dans un mélange gazeux.The device according to the invention can find various applications during the process steps in which there is an interest in adjusting the proportion of gases in a gaseous mixture.

A titre d'exemple, on trouve un intérêt à cela pendant la procédure de vidage contrôlé d'une enceinte à vide, notamment en fin d'opération de vidage : dans ce cas, il est intéressant de pomper de façon accentuée l'humidité présente dans le mélange, et on pourra pour cela agir sur la pression de refoulement de la pompe secondaire dans le sens d'une augmentation de pompage d'humidité.By way of example, there is an interest in this during the procedure of controlled emptying of a vacuum chamber, especially at the end of the emptying operation: in this case, it is advantageous to pump the moisture present in the mixture, and it will be possible to act on the discharge pressure of the secondary pump in the direction of an increase in moisture pumping.

Selon un autre exemple, au cours de certaines étapes de procédés, on pourra trouver avantage à maintenir constante la pression partielle d'au moins un gaz dans l'enceinte à vide. On agira pour cela sur la capacité de pompage sélectif de la pompe secondaire, pour maintenir constante cette pression partielle.According to another example, during certain process steps, it may be advantageous to maintain constant the partial pressure of at least one gas in the vacuum chamber. This will be done on the selective pumping capacity of the secondary pump, to maintain constant this partial pressure.

La possibilité d'agir sur la capacité de pompage sélectif de la pompe secondaire pourra être également utile dans les cas où l'on veut compenser les dérives d'un système de pompage des gaz dans une enceinte à vide.The possibility of acting on the selective pumping capacity of the secondary pump may also be useful in cases where it is desired to compensate for the drifts of a system for pumping gases in a vacuum chamber.

Une autre application intéressante réside dans la compensation des variations possibles des caractéristiques de pompage d'une pompe secondaire, soit du fait d'un vieillissement dans le temps, soit du fait des dépôts progressifs de matière sur les parois de la pompe, soit encore du fait d'un remplacement d'une pompe par une autre.Another interesting application lies in the compensation of possible variations in the pumping characteristics of a secondary pump, either because of aging over time, or because of progressive deposits of material on the walls of the pump, or even makes a replacement of one pump by another.

Dans une application aux procédés de gravure sèche pour fabrication de semi-conducteurs et de microsystèmes électromécaniques (MEMS), on pourra avantageusement évacuer préférentiellement les gaz lourds issus des réactions de gravure, par une augmentation de la pression de refoulement de la pompe secondaire. Il en résulte une augmentation sensible de la vitesse de gravure.In an application to dry etching processes for the fabrication of semiconductors and electromechanical microsystems (MEMS), the heavy gases resulting from the etching reactions can advantageously be evacuated preferentially by an increase in the discharge pressure of the secondary pump. This results in a significant increase in the etching rate.

Le système de contrôle de la pression de refoulement de la pompe secondaire pourra être réalisé en boucle ouverte, c'est-à-dire sans asservissement, ou en boucle fermée par l'asservissement de la pression donnée par un capteur situé sur la ligne de vide à la sortie de la pompe secondaire.The control system of the discharge pressure of the secondary pump may be carried out in open loop, that is to say without servocontrolling, or in closed loop by the servocontrol of the pressure given by a sensor located on the line of empty at the outlet of the secondary pump.

L'asservissement pourra également être effectué d'une façon globale en mesurant les pressions partielles dans l'enceinte à vide, par exemple par des spectromètres de masse, des spectromètres optiques, et en agissant sur l'élément de contrôle de la pression de sortie pour obtenir la concentration désirée dans l'enceinte à vide.The slaving can also be performed in a global manner by measuring the partial pressures in the vacuum chamber, for example by mass spectrometers, optical spectrometers, and by acting on the output pressure control element. to obtain the desired concentration in the vacuum chamber.

La mise en oeuvre de ce dispositif sur un procédé de gravure du polysilicium permet de contrôler les vitesses de gravure.The implementation of this device on a polysilicon etching process makes it possible to control the etch rates.

La consigne de pression partielle des gaz peut résulter de mesures en temps réel de différents paramètres d'un procédé se déroulant dans l'enceinte à vide, ou d'indicateurs en temps différé. Les indicateurs en temps différé peuvent être des mesures liées à une optimisation de procédé, par exemple la vitesse d'attaque, la mesure de contamination, la dérive d'un paramètre de procédé dans le cas d'un indicateur lié au reconditionnement.The partial pressure setpoint of the gases can result from real-time measurements of various parameters of a process taking place in the vacuum chamber, or of delayed time indicators. The deferred time indicators may be measures related to a process optimization, for example the attack speed, the contamination measurement, the drift of a process parameter in the case of an indicator linked to repackaging.

Dans un dispositif selon l'invention, on agit sur la pression de refoulement de la pompe secondaire 9 dans la gamme de pressions où ces modifications entraînent des variations sensibles de vitesse de pompage des gaz sélectivement suivant la nature des gaz, du fait des caractéristiques intrinsèques des pompes turbomoléculaires, moléculaires ou hybrides.In a device according to the invention, it acts on the discharge pressure of the secondary pump 9 in the pressure range where these modifications cause significant variations in the pumping speed of the gases. selectively according to the nature of the gases, because of the intrinsic characteristics of turbomolecular, molecular or hybrid pumps.

En appliquant des variations des vitesses de pompage partiel, le dispositif entraîne également une variation de la vitesse de pompage totale dans l'enceinte à vide, et donc une évolution possible de la pression totale dans l'enceinte à vide.By applying variations of the partial pumping rates, the device also causes a variation of the total pumping rate in the vacuum chamber, and therefore a possible change in the total pressure in the vacuum chamber.

Le dispositif agit donc, simultanément, sur les moyens de régulation de la pression d'aspiration en amont de la pompe secondaire 9, pour réajuster la pression totale dans l'enceinte à vide et pour la maintenir constante.The device therefore acts, simultaneously, on the means for regulating the suction pressure upstream of the secondary pump 9, to readjust the total pressure in the vacuum chamber and to keep it constant.

Cela permet de dissocier complètement la commande de la pression totale dans une enceinte à vide, pilotée par la consigne de pression totale 27, et la commande des pressions partielles dans la même enceinte à vide 8, pilotée par la consigne de pressions partielles 38.This makes it possible to completely dissociate the control from the total pressure in a vacuum chamber, driven by the total pressure setpoint 27, and the control of the partial pressures in the same vacuum chamber 8, driven by the partial pressure setpoint 38.

La présente invention n'est pas limitée aux modes de réalisation qui ont été explicitement décrits, mais elle en inclut les diverses variantes et généralisations qui sont à la portée de l'homme du métier.The present invention is not limited to the embodiments that have been explicitly described, but it includes the various variants and generalizations that are within the reach of those skilled in the art.

Claims (19)

  1. Apparatus for establishing and controlling an appropriate low pressure gas mixture in a vacuum enclosure, the apparatus comprising:
    · at least one secondary pump of a molecular, turbomolecular, or hybrid type;
    · at least one primary pump adapted to deliver to atmospheric pressure;
    · a first pipe having an inlet connected to an outlet of the vacuum enclosure and an outlet connected to a suction inlet of the secondary pump;
    · an intermediate pipe having an inlet connected to a delivery outlet of the secondary pump and an outlet connected to a suction inlet of the primary pump;
    · first control and adjustment means adapted to controlling and adjusting the total gas pressure of the mixture of gases in the vacuum enclosure as a function of a total pressure setpoint; and
    · second control and adjustment means distinct from the first control and adjustment means, disposed downstream from the secondary pump, and acting on the delivery pressure from the secondary pump in the range of pressures in which changes of pressure lead to significant variations in the selective pumping speeds of different gases of the mixture, so as to adapt the pumping capacity of the secondary pump selectively, thereby adjusting the proportions of the gases in the mixture of gases in the vacuum enclosure.
  2. Apparatus according to claim 1, in which the first control and adjustment means are disposed upstream from the secondary pump, and comprise a regulation valve interposed in the first pipe and/or means for controlled injection of gas into the vacuum enclosure.
  3. Apparatus according to claim 1, in which the second control and adjustment means comprise a regulation valve interposed in the intermediate pipe.
  4. Apparatus according to claim 1, in which the second control and adjustment means comprise a gas injection device for injecting an inert gas into the intermediate pipe.
  5. Apparatus according to claim 1, in which the second control and adjustment means comprise speed control means for controlling the speed of the primary pump.
  6. Apparatus according to claim 1, further comprising:
    partial pressure sensors suitable for determining the partial pressure(s) of one or more gases in the mixture of gases in the vacuum enclosure, and for producing partial pressure data; and
    a partial pressure controller, receiving the partial pressure data produced by the partial pressure sensors, comparing said data with partial pressure setpoints, searching for differences between the measured proportions of the gases and the proportions corresponding to the partial pressure setpoints, and generating an output signal controlling the second control and adjustment means to adapt the pumping capacity of the secondary pump selectively in the direction that reduces the difference between the measured proportions of the gases and the proportions corresponding to the partial pressure setpoints.
  7. Apparatus according to claim 6, in which:
    the partial pressure controller generates on its output a delivery pressure setpoint;
    a delivery pressure sensor measures the delivery pressure in the intermediate pipe and generates delivery pressure measurement data; and
    a delivery pressure controller receives the delivery pressure setpoint and the delivery pressure data, and controls the delivery pressure regulation means to reduce the difference between the delivery pressure setpoint and the measured delivery pressure data.
  8. Apparatus according to claim 1, including a control unit controlling the second control and adjustment means in application of a specific program for adapting the pumping capacity of the secondary pump selectively to the various successive steps of a treatment process taking place in the vacuum enclosure.
  9. A method of establishing and controlling an appropriate low pressure mixture of gases in a vacuum enclosure using apparatus according to claim 1, by acting on the delivery pressure of the secondary pump to adapt its pumping capacity selectively, thereby adjusting the proportions of the gases in the gas mixture.
  10. A method according to claim 9, in which action is taken on the delivery pressure by modifying the conduction of the intermediate pipe.
  11. A method according to claim 9 or claim 10, in which action is taken on the delivery pressure by injecting an inert gas into the intermediate pipe.
  12. A method according to claim 9 or claim 10, in which action is taken on the delivery pressure by modifying the speed of the primary pump.
  13. A method according to claim 9, in which action is taken on the delivery pressure of the secondary pump as a function of successive steps in a treatment process taking place in the vacuum enclosure.
  14. A method according to claim 9, in which action is taken on the delivery pressure of the secondary pump in the direction appropriate for increasing the pumping of moisture during a process of controlled evacuation of the vacuum enclosure.
  15. A method according to claim 9, in which action is taken on the delivery pressure of the secondary pump in, the direction appropriate for keeping the partial pressure of at least one gas in the vacuum enclosure constant.
  16. The use of apparatus according to claim 1 to compensate for variations in the pumping characteristics of a secondary pump.
  17. The use of apparatus according to any one of claims 1 to 8 to compensate drift in a system for pumping gas from a vacuum enclosure.
  18. The use of apparatus according to claim 1 to increase the speed of a dry etching process by increasing the delivery pressure of the secondary pump.
  19. The use of apparatus according to claim 1 to control the quality of chemical vapor deposition (CVD) by acting on the delivery pressure of the secondary pump.
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US8297311B2 (en) 2012-10-30
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ATE385545T1 (en) 2008-02-15
US20110005607A1 (en) 2011-01-13
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EP1669609A1 (en) 2006-06-14
US20060118178A1 (en) 2006-06-08

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