EP1639613B1 - Micro-commutateur bistable a faible consommation - Google Patents

Micro-commutateur bistable a faible consommation Download PDF

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Publication number
EP1639613B1
EP1639613B1 EP04767860A EP04767860A EP1639613B1 EP 1639613 B1 EP1639613 B1 EP 1639613B1 EP 04767860 A EP04767860 A EP 04767860A EP 04767860 A EP04767860 A EP 04767860A EP 1639613 B1 EP1639613 B1 EP 1639613B1
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EP
European Patent Office
Prior art keywords
microswitch
deformed position
contact
conductive tracks
electrical contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP04767860A
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German (de)
English (en)
French (fr)
Other versions
EP1639613A1 (fr
Inventor
Philippe Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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Publication of EP1639613A1 publication Critical patent/EP1639613A1/fr
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Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H61/00—Electrothermal relays
    • H01H2061/006—Micromechanical thermal relay
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Definitions

  • the present invention relates to a bistable micro-switch, low consumption and horizontal displacement.
  • micro-switch is particularly useful in the field of mobile telephony and in the space domain.
  • Dual switches have the advantage of obtaining circuits with fewer components (for example 10 redundancy functions require 10 double switches instead of 20 single switches), which means among other things less reliability tests, less assembly, a saving of space and overall a lower cost.
  • micro-switches that is, microelectronics
  • signal routing impedance matching networks
  • gain tuning of amplifiers etc.
  • frequency bands of the signals to be switched they can range from a few MHz to several tens of GHz.
  • switches from microelectronics are used, which allow integration with the electronics of circuits and which have a low manufacturing cost. In terms of performance, these components are rather limited.
  • silicon FET type switches can switch high power signals at low frequencies, but not at high frequencies.
  • GaAs Metal Semiconductor Field Effect Transistors (GaAs) or PIN diodes work well at high frequencies, but only for low level signals.
  • the ohmic contact There are two types of contact for MEMS microswitches: the ohmic contact and the capacitive contact.
  • the ohmic contact switch the two RF tracks are contacted by a short circuit (metal-to-metal contact). This type of contact is suitable for both continuous signals and for high frequency signals (above 10 GHz).
  • the capacitive contact switch an air space is electromechanically adjusted to obtain a capacitance variation between the closed state and the open state. This type of contact is particularly well suited to high frequencies (above 10 GHz) but inadequate at low frequencies.
  • the thermal actuated micro-switches that can be described as conventional are non-bistable. They offer the advantage of a low operating voltage. They have several drawbacks: excessive consumption (especially in the case of mobile telephony applications), low switching speed (due to thermal inertia) and the need for a supply voltage to maintain contact with closed position.
  • the electrostatically actuated micro-switches that can be described as conventional are non-bistable. They offer the advantages of fast switching speed and generally simple technology. They have problems of reliability, this point being particularly sensitive in the case of electrostatic switches with low operating voltage (bonding structures). They also require a supply voltage to maintain contact in the closed position.
  • Micro-switches with electromagnetic actuation that can be described as classical are non-bistable. They generally operate on the principle of the electromagnet and essentially use iron-based magnetic circuits and an excitation coil. They have several disadvantages. Their technology is complex (coil, magnetic material, permanent magnet in some cases, etc ). Their consumption is important. They also require a supply voltage to maintain contact in the closed position.
  • the contact is made on the side of the tracks.
  • This configuration is well suited to double contact, with a symmetrical actuator.
  • Metallization "gold" can be done in the very last technological step. All the preceding steps can be compatible with the realization of integrated circuits.
  • the shape of the contact is determined during the photolithography step. For example, a rounded contact may be used to make the contact point and thus limit the contact resistance.
  • the shape of the beam is determined during the photolithography step. Its stiffness is therefore well controlled.
  • the metallization on the flank is delicate. The contact resistance can therefore be poorly controlled. This configuration is unsuitable for electrostatic actuation because of the very small viewing surfaces.
  • the number of equilibrium states is another characteristic of the movement of the switches.
  • the standard case is one where the actuator has only one state balance. This implies that one of the two states of the switch (switched or non-switched) requires a DC voltage supply for holding in position. Stopping the excitation returns the switch to its equilibrium position.
  • the bistable case is the case where the actuator has two distinct equilibrium states.
  • the advantage of this mode of operation is that the two positions "closed” and “open” of the switch are stable and do not require power until you switch from one state to another.
  • This micro-switch is particularly well suited to the field of mobile telephony and the space domain.
  • the subject of the invention is therefore a bistable MEMS micro-switch made on a substrate and capable of electrically connecting the ends of at least two conductive tracks, comprising a beam suspended above the surface of the substrate, the beam being embedded in both ends thereof and being constrained in compression when in an undeformed position, the beam having electrical contact means arranged to provide a lateral connection with the ends of the two conductive tracks upon deformation of the beam in a horizontal direction by relative to the surface of the substrate, the micro-switch having means actuating the beam to place it either in a first deformed position, corresponding to a first stable state, or in a second deformed position, corresponding to a second stable state and opposite to the first deformed position with respect to the undistorted position , the electrical contact means connecting the ends of the two conductive tracks when the beam is in its first deformed position, characterized in that the undeformed position of the beam is the initial position of the beam, that is to say say before commissioning the micro-switch.
  • the micro-switch can be a dual micro-switch.
  • the first deformed position corresponds to the connection of the ends of two first conductive tracks
  • the second deformed position corresponds to the connection of the ends of two second conductive tracks.
  • the first deformed position corresponds to the connection of the ends of two conductive tracks
  • the second deformed position corresponds to a lack of connection.
  • the beam is of dielectric or semiconductor material and the electrical contact means are formed of an electrically conductive pad and secured to the beam.
  • the means for actuating the beam may comprise thermal actuators using a bimetallic effect. Each thermal actuator can then comprise a block of thermal conductive material in intimate contact with an electrical resistance.
  • the means for actuating the beam may comprise means for implementing forces electrostatic. They may comprise thermal actuators using a bimetallic effect and means for implementing electrostatic forces.
  • the beam is made of electrically conductive material.
  • the means for actuating the beam may then comprise means for implementing electrostatic forces.
  • the electrical contact means may have a shape allowing to fit between the ends of the conductive tracks to be connected.
  • the ends of the conductive tracks may have flexibility to match the shape of the electrical contact means during a connection.
  • the microswitch may also include relaxation spring means for at least one of the embedded ends of the beam.
  • the means forming an electrical contact may be means ensuring an ohmic contact or means providing a capacitive contact.
  • FIG. 1 is a view from above of a first variant of a double micro-switch according to the first invention.
  • the micro-switch is made on a substrate 1 of which only a portion is represented for the sake of simplification.
  • This micro-switch is a double switch. It is intended to make a connection between the ends 12 and 13 of the conductive tracks 2 and 3, or between the ends 14 and 15 of the conductive tracks 4 and 5.
  • the micro-switch of FIG. 1 comprises a beam 6 of dielectric or semiconductor material. It is located in the plane of the conductive tracks. The beam is embedded at both ends in raised portions of the substrate 1. It is shown in its initial position and is then subjected to compressive stress. This constraint can be induced by the intrinsic constraints of the materials used to produce the mobile structure of the microswitch, that is to say the beam and the associated elements (actuators).
  • the beam shown is of rectangular section. It supports on its face directed towards the tracks 2 and 3 (that is to say on one of its flanks) actuators 20 and 30 and, on its face directed towards the tracks 4 and 5 (that is to say on its other side), actuators 40 and 50.
  • the actuators are located near the recess areas of the beam.
  • Each actuator consists of a good thermal conductor pad and an electrical resistor.
  • the actuator 20 comprises a block 21 which is associated with a resistor 22. The same applies to the other actuators.
  • the beam is preferably made of dielectric or semiconductor material with a low coefficient of thermal expansion.
  • the pavers of the thermal actuators are preferably made of metal material with a high coefficient of thermal expansion to obtain a bimetallic effect at high efficiency.
  • the displacement of the beam being in the horizontal direction (the plane of the figure), the actuators are placed on the sides of the beam and in the vicinity of the recesses, always for the sake of thermomechanical efficiency.
  • the beam 6 also supports, in the central part and on its flanks, an electrical contact pad 7, intended to provide an electrical connection of the ohmic type between the ends 12 and 13 of the tracks 2 and 3, and an electrical contact pad 8 between the ends 14 and 15 of the tracks 4 and 5.
  • a first set of actuators makes it possible to switch the beam 6 to a position corresponding to one of its two stable states. This is represented by FIG. 2.
  • the actuators 40 and 50 which induce a bimetallic effect in the beam 6, the latter is deformed to place in a first stable state shown in the figure.
  • the electrical contact pad 7 provides a connection between the ends 12 and 13 of the conductive tracks 2 and 3.
  • the power supply resistors of the actuators 40 and 50 are interrupted and the beam remains in this first stable state.
  • the electrical resistances of the actuators are preferably made of a conductive material having a high resistivity.
  • Conductive tracks and contact pads are preferably made of gold for its good electrical properties and its reliability over time, vis-à-vis oxidation in particular.
  • the recesses of the beam can be either rigid (simple embedding), or more or less flexible by adjusting the configuration of the recesses, for example by the addition of relaxation springs. Being able to play on flexibility the beam makes it possible to control the stresses in the beam both initially (intrinsic constraints) and to move from one stable state to another (passing through a state of buckling). This has the advantage of limiting the risk of breaking of the beam but also to allow a limitation of the consumption of the microswitch (lowering of the switching temperature of the microswitch).
  • the beam can have a relaxation of stresses only at one of its embedded ends or at both ends.
  • FIG. 4 is a view from above of a second variant of a double micro-switch according to the present invention and the two ends of the beam of which have a stress-relieving recess.
  • the embodiment variant of FIG. 4 comprises the same elements as the variant embodiment of FIG. 2 with the exception of embedding the ends of the beam.
  • the substrate 1 has stress relief slots 111 perpendicular to the axis of the beam. Slots 111 provide some flexibility to the portion of the substrate between them and the beam.
  • the microswitch is shown in its initial position, before being put into service.
  • electrostatic forces can also be envisaged for the microswitch according to the invention either as an actuation principle or as a switched-position assistance after stopping the power supply of the heating resistors. actuators, to increase the pressure of the electrical contact pad and thus limit the contact resistance.
  • FIG. 5 is a view from above of a third variant of a double micro-switch according to the present invention.
  • This microswitch uses bimetallic actuators and has electrostatic assistance. It is represented in its initial position, before being put into service.
  • the substrate 201 is recognized, tracks 202 and 203 to be connected by the contact pad 207 during a tilting of the beam 206 in a first stable state, tracks 204 and 205 to be connected by the contact pad 208 during a tilting of the beam 206 in a second stable state, actuators 220, 230 and 240, 250.
  • the micro-switch of FIG. 5 further comprises electrodes enabling the application of electrostatic forces. These electrodes are distributed on the beam and on the substrate.
  • the beam 206 supports on a first side of the electrodes 261 and 262 and on a second side, electrodes 263 and 264. These electrodes are located between the thermal actuators and the electrical contact pads.
  • the substrate 201 supports electrodes 271 to 274 facing each electrode supported by the beam 206.
  • the electrode 271 has a portion facing the electrode 261, this part not being visible in the figure, and a part intended to at its electrical connection, this part being visible in the figure. The same goes for electrodes 272, 273 and 274 with respect to electrodes 262, 263 and 264 respectively.
  • the electrodes 271 to 274 have a shape that corresponds to the shape of the deformed beam. This makes it possible to limit the actuating or holding voltages (electrodes with variable gap).
  • the micro-switch can be put in a first stable state, for example that corresponding to the connection of the conductive tracks 202 and 203 by the contact pad 207, by means of the thermal actuators 240 and 250 which are put into service only to obtain the first stable state.
  • the application of a voltage between the electrodes 261 and 271 on the one hand and between the electrodes 262 and 272 on the other hand ensures a decrease in the contact resistance between the pad 207 and the tracks 202 and 203.
  • the microswitch can be put in the second stable state by means of the actuators 220 and 230 which are put into service only to obtain the changeover from the first stable state to the second stable state.
  • the application of a voltage between the electrodes 263 and 273 on the one hand and between the electrodes 264 and 274 on the other hand ensures a decrease in the contact resistance between the pad 208 and the tracks 204 and 205.
  • FIG. 6 is a top view of a simple micro-switch according to the present invention.
  • This microswitch uses bimetallic actuators without electrostatic assistance. It is represented in its initial position, before being put into service.
  • the substrate 301 is recognized, tracks 302 and 303 to be connected by the contact pad 307 during a tilting of the beam 306 in a first stable state, the second stable state corresponds to a lack of connection.
  • Actuators 320, 330 and 340, 350 are also recognized.
  • FIG. 7 is a top view of a fourth variant of a dual micro-switch according to the present invention.
  • This microswitch only uses electrostatic actuators. It is represented in its initial position, before being put into service.
  • the substrate 401 is recognized, tracks 402 and 403 to be connected by the contact pad 407 during a tilting of the beam 406 in a first stable state and tracks 404 and 405 to be connected by the contact pad 408 when a tilting of the beam 406 in a second stable state.
  • the micro-switch of FIG. 7 comprises electrodes enabling the application of electrostatic forces. These electrodes are distributed over the beam and the substrate.
  • the beam 406 supports on a first side 461 and 462 electrodes and, on a second side, electrodes 463 and 464. These electrodes are located on each side of the electrical contact pads 407 and 408.
  • the substrate 401 supports electrodes 471 to 474 facing each electrode supported by the beam 406.
  • the electrode 471 has a portion facing the electrode 461, this part not being visible in the figure, and a part for its electrical connection, this part being visible in the figure. The same is true for the electrodes 472, 473 and 474 with respect to the electrodes 462, 463 and 464 respectively.
  • the micro-switch can be put in a first stable state, for example that corresponding to the connection of the conductive tracks 402 and 403 by the contact pad 407, by applying a voltage between the electrodes 461 and 471 on the one hand and between the electrodes 462 and 472 on the other hand. Once the beam has tilted to its first stable state, the applied voltage may be suppressed or reduced so as to decrease the contact resistance between pad 407 and tracks 402 and 403.
  • the microswitch can be put in the second stable state by applying a voltage between the electrodes 463 and 473 on the one hand and between the electrodes 464 and 474 on the other hand (and removing the electrostatic assist voltage from keeping in the first steady state if this assistance was used). Once the beam has switched to its second stable state, the applied voltage can be suppressed or reduced as before.
  • FIG. 8 is a view from above of a fifth variant of a double micro-switch according to the present invention.
  • This fifth variant is an optimized version of the previous variant.
  • the same references as in the previous line have been retained to designate the same elements.
  • the electrodes 471 ', 472', 473 'and 474' have the same function as the corresponding electrodes 471, 472, 473 and 474 of the micro-switch of FIG. 7. However, they have a shape which corresponds to the shape of the deformed beam. This makes it possible to limit the actuating or holding voltages (electrodes with variable gap).
  • Figure 9 is a top view of a sixth variant of a dual micro-switch according to the present invention. It is represented in its initial position before being put into service.
  • the substrate 501 is recognized, tracks 502 and 503 to be connected by the contact pad 507 during a tilting of the beam 506 in a first stable state and tracks 504 and 505 to be connected by the contact pad 508 when a tilting of the beam 506 in a second stable state.
  • the beam 506 is in this variant a metal beam, for example aluminum, supporting on its flanks the contact pads 507 and 508.
  • the tilting of the beam in a first stable state for example that corresponding to the connection of the conductive tracks 502 and 503 is obtained by applying a tilt voltage between the electrode beam 506 and the electrodes 571 and 572. Once the beam has tilted to its first stable state, the applied voltage can be suppressed or reduced to reduce the contact resistance between the stud 507 and the tracks 502 and 503.
  • the micro-switch can be put into the second stable state by applying a voltage between the beam 506 and the electrodes 573 and 574 (and removal of the electrostatic assist voltage maintaining in the first stable state if this assistance was used). Once the beam has switched to its second stable state, the applied voltage can be suppressed or reduced as before.
  • the electrostatic actuation has been optimized by the shape given to the electrodes 571 to 574.
  • Figure 10 is a top view of a dual micro-switch corresponding to the first variant but provided with optimized contacts. The microswitch is shown in its initial position before being put into service. The same references as in Figure 1 have been retained to designate the same elements.
  • the ends 12 ', 13', 14 ', and 15' of the conductive tracks respectively 2, 3, 4 and 5 have been optimized to ensure better electrical contact with the contact pads 7 'and 8' .
  • the contact pads 7 'and 8' have a wider shape at their base (that is to say near the beam) than at their top. They can thus fit more easily between the ends 12 ', 13' and 14 ', 15' which are, they, provided with a recess fillet.
  • the ends of the conductive tracks may also be slightly flexible to match the shape of the contact pad and thus ensure a better electrical contact. This is what the Figure 11 where the microswitch is shown in a first stable state.
  • micro-switch according to the present invention has the following advantages.
  • the invention offers the possibility of obtaining a double switch.
  • the embodiment of the microswitches according to the invention has a strong compatibility with the processes for producing integrated circuits (metallizations "gold” at the end of the manufacturing process if necessary).
  • the bi-stability of the microswitch is perfectly controlled for two reasons.
  • the first reason is that the bi-stability is obtained by the fact that the beam must be in compressive stress. This constraint is brought by the constituent materials of the switch (shape, thickness). If the beam is designed perfectly symmetrically, and if the realization of each of the two sets of actuators is made during the same deposit, the stress can only be perfectly symmetrical (same shape, same thickness and symmetry of the actuators). It is therefore in the presence of a device capable of not favoring a stable state with respect to another state which would be less stable.
  • the second reason is that it is possible to control the value of the compressive stress by the nature of the deposit and also by the design, by adding "springs" of stress release.
  • the micro-switch according to the invention can advantageously be produced on a silicon substrate.
  • the embedding portion and the beam may be made of Si 3 N 4 , SiO 2 or polycrystalline silicon.
  • the conductive tracks, the contact pads, the electrodes, the thermal actuators can be made of gold, aluminum or copper, nickel, materials that can be deposited under vacuum or electrochemically (electrolysis, electroless plating).
  • the heating resistors may be made of TaN, TiN or Ti.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Micromachines (AREA)
  • Thermally Actuated Switches (AREA)
  • Liquid Crystal (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Polyesters Or Polycarbonates (AREA)
EP04767860A 2003-07-01 2004-06-30 Micro-commutateur bistable a faible consommation Expired - Lifetime EP1639613B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0350278A FR2857153B1 (fr) 2003-07-01 2003-07-01 Micro-commutateur bistable a faible consommation.
PCT/FR2004/050298 WO2005006364A1 (fr) 2003-07-01 2004-06-30 Micro-commutateur bistable a faible consommation

Publications (2)

Publication Number Publication Date
EP1639613A1 EP1639613A1 (fr) 2006-03-29
EP1639613B1 true EP1639613B1 (fr) 2007-08-08

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EP04767860A Expired - Lifetime EP1639613B1 (fr) 2003-07-01 2004-06-30 Micro-commutateur bistable a faible consommation

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Country Link
US (1) US7489228B2 (ja)
EP (1) EP1639613B1 (ja)
JP (1) JP4464397B2 (ja)
AT (1) ATE369612T1 (ja)
DE (1) DE602004008075T2 (ja)
FR (1) FR2857153B1 (ja)
WO (1) WO2005006364A1 (ja)

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DE602004008075T2 (de) 2008-05-15
ATE369612T1 (de) 2007-08-15
US20060152328A1 (en) 2006-07-13
WO2005006364A1 (fr) 2005-01-20
DE602004008075D1 (de) 2007-09-20
EP1639613A1 (fr) 2006-03-29
FR2857153B1 (fr) 2005-08-26
FR2857153A1 (fr) 2005-01-07
JP4464397B2 (ja) 2010-05-19
US7489228B2 (en) 2009-02-10

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