EP1638701A2 - Depot sur supraconducteur haute temperature critique assiste par faisceau ionique pour bande a film epais - Google Patents

Depot sur supraconducteur haute temperature critique assiste par faisceau ionique pour bande a film epais

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Publication number
EP1638701A2
EP1638701A2 EP04776126A EP04776126A EP1638701A2 EP 1638701 A2 EP1638701 A2 EP 1638701A2 EP 04776126 A EP04776126 A EP 04776126A EP 04776126 A EP04776126 A EP 04776126A EP 1638701 A2 EP1638701 A2 EP 1638701A2
Authority
EP
European Patent Office
Prior art keywords
deposition
hts
substrate
ion
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04776126A
Other languages
German (de)
English (en)
Other versions
EP1638701A4 (fr
Inventor
Venkat Selvamanickam
Hee-Gyoun Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SuperPower Inc
Original Assignee
SuperPower Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SuperPower Inc filed Critical SuperPower Inc
Publication of EP1638701A2 publication Critical patent/EP1638701A2/fr
Publication of EP1638701A4 publication Critical patent/EP1638701A4/fr
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering

Definitions

  • The.present invention relates to the manufacture of thick film high-temperature superconductor (HTS) coated wire having increased current capability.
  • HTS high-temperature superconductor
  • HTS-coated wire forms the basic building block of the world's electric power system, including transformers, transmission and distribution systems, and motors.
  • HTS-coated wire offers best-in-class performance, carrying over one hundred times more current than conventional copper and aluminum conductors of the same physical dimension do.
  • the superior power density of HTS-coated wire will enable a new generation of power industry technologies. It offers major size, weight, and efficiency benefits.
  • HTS technologies will drive down costs and increase the capacity and reliability of electric power systems in a variety of ways. For example, HTS-coated wire is capable of transmitting two to five times more power through existing rights of way.
  • This new cable will offer a powerful tool to improve the performance of power grids while reducing their environmental footprint.
  • HTS tape used in the manufacture of next-generation HTS-coated wires have been fabricated at high performance levels, hi order for HTS technology to become commercially viable for use in the power generation and distribution industry, it will be necessary to develop techniques for continuous, high-throughput production of HTS tape.
  • Vapor deposition is a process for manufacturing HTS tape where vapors of superconducting materials are deposited on a tape substrate, thereby forming an HTS coating on the tape substrate.
  • Well-known vapor deposition processes that show promise for the high-throughput cost-effective production of HTS tapes include metalorganic chemical vapor deposition (MOCND) and pulsed laser deposition (PLD).
  • MOCND metalorganic chemical vapor deposition
  • PLD pulsed laser deposition
  • HTS film such as yttrium-barium-copper-oxide (YBa Cu 3 O 7 or "YBCO”) film, may be deposited onto a heated buffered metal substrate to form an HTS-coated conductor.
  • cost per meter cost and performance can be characterized as the cost per kiloamp-meter. More specifically, by increasing the current for a given cost per meter of coated conductor the cost per kiloamp-meter is reduced. This is stated as the critical current (Jc) of the deposited HTS material multiplied by the cross-sectional area of the film.
  • Tatekawa, et al. U.S. Patent No. 6,143,697, dated November 7, 2000 and entitled "Method for Producing Superconducting Thick Film,” describes a method of producing a superconducting thick film that involves the steps of forming a thick layer comprising a superconducting material on a substrate; firing the thick layer formed on the substrate; subjecting the fired thick layer to cold isostatic pressing; and re-firing the thick layer subjected to cold isostatic pressing.
  • Tatekawa, et al A drawback of Tatekawa, et al, is that while it is a suitable method for forming superconducting oxide thick fihns, it does not provide a cost-effective way to improve the morphology of the film and thus minimize the film defects, such as high porosity, voids, and surface roughness, and thereby provide thick HTS films having increased critical current. Tatekawa, et al., is therefore not suited for the cost-effective production of high- current HTS-coated conductors.
  • Figure 1 illustrates an ion-assisted MOCND system in accordance with the invention for producing high-current HTS-coated tapes by depositing HTS thick film with increased current capability.
  • Figure 2 illustrates an ion-assisted PLD system in accordance with the invention for producing high-current HTS-coated tapes by depositing HTS thick film with increased current capability.
  • the present invention is an ion-assisted HTS thick film continuous deposition process for producing YBCO films with a thickness in excess of 1.5 microns with increased current capacity for use in the manufacture of high-current HTS-coated tape.
  • the ion-assisted HTS thick film deposition process of the present invention includes an ion source that bombards the deposition zone within any well-known deposition process, such as an MOCND, PLD or sputtering process.
  • This ion source provides additional energy to the deposition process that results in improved film mo ⁇ hology for film thicknesses above 1.5 microns.
  • This improved film mo ⁇ hology results in, for example, increased material density, improved surface roughness, and reduced porosity. Consequently, as the YBCO film grows to thicknesses exceeding 1.5 microns during the deposition process of the present invention film defects are minimized, which results in an increase in current density of the resulting YBCO thick film.
  • Ion beam-assisted electron beam evaporation is well known in, for example, optical applications where high-energy ions are focused on the film as it grows, thus forming a very dense, smooth, uniform optical structure.
  • this technique has not been applied to HTS deposition processes to achieve similar growth enhancements.
  • the novel aspect of this invention is the inclusion of an ion source in at least the last zone of an at least two zone coating deposition process to enhance the conventional coating process that is occurring within the system of the present invention.
  • the process of this invention can produce high current density HTS tape having a total coating thickness in excess of 1.5 microns and a critical current density in excess of 200A per centimeter.
  • the process produces tapes having a total coating thickness in excess of 1.5 microns and a critical current density in excess of 300A per centimeter and in a most preferred embodiment it produces tapes having a total coating thickness in excess of 1.5 microns and a critical current density in excess of 400A per centimeter.
  • the ion-assisted HTS thick film deposition process of the present invention is disclosed, firstly, in reference to an MOCND process that is described in Figure 1 and, secondly, in reference to a PLD process that is described in Figure 2 below.
  • the ion-assisted HTS thick film deposition process of the present invention is not limited to only MOCVD and PLD processes.
  • the ion-assisted HTS thick film deposition process of the present invention maybe applied to evaporation and sputtering processes.
  • Figure 1 illustrates an ion-assisted MOCVD system 100 in accordance with the invention for producing high-current HTS-coated tapes by depositing HTS thick film with increased current capability.
  • the ion-assisted MOCVD system 100 of the present invention includes a conventional MOCVD reactor 110, which is a vacuum-sealed deposition chamber in which an MOCVD process occurs, such as a cold- wall reactor that may be maintained at a pressure of, for example, 1.6 Torr.
  • the MOCVD reactor 110 houses a showerhead 112 located in close proximity to a substrate heater 114.
  • a substrate tape 116 is positioned and translates (during operation) between the showerhead 112 and the substrate heater 114 within a deposition zone 118 formed along the length of the showerhead 112, i.e., the area in which the substrate tape 116 is exposed to the precursor vapors.
  • multiple regions within the deposition zone 118 are established, for example, a zone A and a zone B as shown in Figure 1.
  • the substrate tape 116 is a flexible length of substrate formed from a variety of materials, such as stainless steel or a nickel alloy such as Inconel, upon which buffer layers, such as yttrium-stabilized zirconia (YSZ) and/or cerium oxide (CeO 2 ) have been previously deposited.
  • the substrate tape 116 is capable of withstanding temperatures up to 950 °C and has dimensions that may vary to meet the desired finished product and system limitations.
  • the substrate tape 116 may have a thickness of 25 microns, a width of 1 cm, and a length of 100 meters.
  • the showerhead 112 is a device for uniformly distributing precursor vapors onto the substrate tape 116.
  • the surface of the showerhead 112 that is oriented toward the substrate tape 116 includes multiple fine holes evenly distributed throughout its area, through which the precursor vapors exit toward the substrate tape 116.
  • the length of the showerhead 112 and the specific composition of the vapor precursors feeding the showerhead 112 may be user defined depending on the application.
  • the substrate heater 114 is a well-known single or multiple zone substrate heater that provides heating, typically in the range of 700 to 950 °C, to the substrate tape 116 via a radiant heating element, such as a lamp.
  • the substrate heater 114 is a resistance heater having a heating element, such as Kanthal or MoSi 2 .
  • the ion-assisted MOCVD system 100 further includes a system for the delivery of coating precursors.
  • An exemplary precursor delivery system includes a pump 120 that is fed by a liquid precursor source (not shown) that contains a solution containing organometallic precursors, such as tetramethyl heptanedionate (THD) compounds of yttrium (Y), barium (Ba), and copper (Cu), along with an appropriate mixture of solvents, such as tetrahydrofuran and isopropanol.
  • the pump 120 is a high-pressure, low flow rate pump, such as a high-pressure liquid chromatography (HPLC) pump, capable of a low flow rate between 0.1 and 10 mL/min.
  • HPLC high-pressure liquid chromatography
  • the pump 120 feeds a precursor vaporizer 122 via a liquid line 124 formed of tubing or piping.
  • the precursor vaporizer 122 is a well-known device in which a precursor solution is flash vaporized and mixed with an inert carrier gas, such as argon or nitrogen, for delivery to the showerhead 112.
  • the inert carrier gas is fed into the precursor vaporizer 122 via a gas line 126 formed of tubing or piping.
  • the precursor vapors exit the precursor vaporizer 122 via a precursor vapor line 128 that connects to the inlet of the showerhead 112.
  • the vapor line 128 is a connecting tube or pipe through which the precursor vapor and its inert carrier gas pass on their way from the precursor vaporizer 122 to the showerhead 112.
  • an oxygen line 130 opens into the vapor line 128.
  • the oxygen line 130 is a tube or pipe through which oxygen passes for introduction to the precursor vapor and its inert carrier gas flowing within the vapor line 128.
  • the ion-assisted MOCVD system 100 includes an ion source 132 that emits an ion beam 134 that is directed toward the substrate tape 116 within the MOCVD reactor 110.
  • the ion source 132 maybe an inexpensive gridless ion bombardment source that is capable of generating a collimated or non-diffused ion beam at a power level typically in the range of 0.5 to 10 KW.
  • An example of the gridless ion source 132 is commercially available from Veeco Instruments, [2330 E Prospect Fort Collins, CO 80525] operates at voltages up to 100-1000 eV, and has dimensions of 6 cm by 66 cm.
  • the size and orientation of the ion source 132 is determined based on the length of the substrate tape 116 irradiated and the design of the MOCVD reactor 110.
  • the ion source 132 does not have to be located in close proximity to the deposition zone 118, as the ions of ion beam 134 can travel long distances.
  • the ion source 132 may be a gridded ion source.
  • a gridded ion source is likely to be less desirable than a gridless ion source because, typically, gridded ion sources are more costly than gridless ion sources and function with more stringent pressure requirements than gridless ion sources, i.e., 10 4 to 10 ⁇ 6 Torr as compared with 10 "2 to 10 "3 Torr for gridless ion sources.
  • the pressure interface between the ion source 132 and the MOCVD reactor 110 is accomplished via a pressure differential 136 mounted within the outer wall of the MOCVD reactor 110.
  • the pressure differential 136 is a device that allows the ion source 132 to be held at a typical vacuum pressure in the range of approximately 10 "4 to 10 "2 Torr, while at the same time allowing the MOCVD reactor 110 to be held at a vacuum pressure typically in the range of 1-50 Torr. This can be accomplished by means of a turbomolecular pump or a cryopump.
  • the pressure differential 136 also includes an opening that allows the ion beam 134 to pass into the MOCVD reactor 110.
  • HTS film such as YBCO
  • YBCO vapor-phase precursors onto the heated substrate tape 116 via chemical reactions that occur at the surface of the substrate tape 116. More specifically, the linear translation of the substrate tape 116 through the deposition zone 118 begins in a direction progressing from zone A to zone B (the mechanisms for translating the substrate tape 116 are not shown), the pump 120 is activated, the precursor vaporizer 122 is activated, and the substrate heater 114 is activated.
  • the vapor line 128 delivers the yttrium-barium-copper vapor precursor to the showerhead 112, which uniformly directs this vapor precursor toward the substrate tape 116 within the deposition zone 118.
  • the result of the oxygen reacting with the yttrium-barium- copper vapor precursors and then this reacting combination coming into contact with the heated substrate tape 116 within the deposition zone 118 causes the yttrium-barium- copper vapor precursor to decompose and form a layer of YBCO atop the substrate tape 116 as it translates through the deposition zone 118.
  • the substrate tape 116 experiences the initial accumulation of YBCO film within zone A of the deposition zone 118 where the film thickness builds from zero microns up to 1.0 to 1.5 microns.
  • the substrate tape 116 subsequently experiences further accumulation of YBCO film within zone B of the deposition zone 118, where the film thickness continues to build from approximately 1.5 microns up to 5 microns.
  • the ion source 132 is activated and thus emits the ion beam 134.
  • the stream of positive ions forming the ion beam 134 is accelerated toward the substrate tape 116 within the deposition zone 118. More specifically, the ion beam 134 emitting from the ion source 132 is focused upon the substrate tape 116 as it translates through zone B of the deposition zone 118, where the YBCO film is further accumulating and approaching and/or exceeding a thickness of 1.5 microns.
  • the process is shown as having two deposition zones A and B, there may be multiple deposition zones, with the requirement that those deposition zones where the substrate has a coating in excess of 1.5 microns thick, have an ion source focused on the substrate tape as it translates through that deposition zone. While it is not an absolute requirement, it may be preferable to have the ion source focused on the substrate even in the first deposition zone where the film is grown to a thickness of 1.5 microns. In this way, it could be assured that a template of a dense film is available for subsequent growth.
  • the YBCO deposition process occurring within zone B of the deposition zone 118 is influenced by the ion bombardment provided by the ion beam 134. Due to this ion bombardment, additional energy is added to the deposition process within zone B of the deposition zone 118, which has the effect of minimizing film defects, such as high porosity, voids, and surface roughness, thereby maintaining a high-quality growth template as the YBCO film accumulates by vapor deposition upon the substrate tape 116.
  • the ion-assisted MOCVD system 100 of the present invention is capable of producing a YBCO film with a thickness in excess of 1.5 microns that has increased material density and smoothness that results in increased current capacity.
  • the orientation is governed by the design of the MOCVD reactor 110 because there is an optimum distance between the substrate tape 116 and the showerhead 112.
  • the orientation of the incident ion beam 134 is governed by the dimension of the showerhead 112 and the substrate heater 114.
  • the ion beam 134 from the ion source 132 is not focused upon the substrate tape 116 within zone A of the deposition zone 118 where the YBCO film is forming with a thickness that is less than, for example, 1.0 to 1.5 microns. This is because, as stated above, the quality of the YBCO film mo ⁇ hology within the first 1.0 to 1.5 microns of growth is very high and the current capacity is not inhibited.
  • the ion beam may be allowed to impinge upon the substrate in zone A as well. Ion bombardment may be used within zone A of the deposition zone 118 where the thickness of the YBCO film is less than 1.0 to 1.5 microns to assure that the film is dense, thereby providing a good template for subsequent layers.
  • FIG. 2 illustrates a second embodiment of the invention, an ion-assisted PLD system 200 for producing high-current HTS-coated tapes by depositing HTS thick film with increased current capability.
  • the ion-assisted PLD system 200 of the present invention includes a conventional deposition chamber 210, which is a vacuum chamber designed specifically for pulsed laser deposition applications.
  • An example of such a vacuum chamber is a 12- or 18-inch vacuum chamber commercially available by Neocera, [10000 Virginia Manor Road Beltsville, MD 20705] although those skilled in the art will appreciate that a number of alternative vendors manufacture vacuum chambers in a variety of shapes and sizes.
  • the deposition chamber 210 is maintained at a pressure of, for example, 200 mTorr.
  • the deposition chamber 210 houses a first target 212 and a second target 214 that are located in close proximity to a substrate heater 216.
  • the substrate tape 116 as described in Figure 1 is positioned and translates (during operation) between the targets 212 and 214 and the substrate heater 216.
  • the targets 212 and 214 are composed of HTS material, such as YBCO, and are available commercially from suppliers such as Praxair Surface Technologies, Specialty Ceramics [16130 Wood- Red Rd., #7, Woodinville, WA 98072] and Superconductive Components, Inc. [1145 Chesapeake Ave., Columbus, OH 43212].
  • the temperature of the substrate tape 116 is controlled via the substrate heater 216.
  • the substrate heater 216 is a well-known single or multiple zone substrate heater that provides heating, typically in the range of 750 and 830 °C, to the substrate tape 116 via a radiant heating element such as a lamp.
  • the ion-assisted PLD system 200 includes an ion source 218 that emits an ion beam 220 that is directed toward the substrate tape 116 within the deposition chamber 210.
  • the ion source 218 is an inexpensive gridless ion bombardment source that is capable of generating a collimated or non-diffused ion beam at a power level typically in the range of 0.5 to 10 KW.
  • An example of a gridless ion source 218 is commercially available from Veeco Instruments, [2330 E Prospect Fort Collins, CO 80525] operates at voltages up to 100-1000 eV, and has dimensions of 3 to 6 cm in diameter.
  • the size of the ion source 218, especially the length of the ion source 218, is the similar to the length of the film deposition zone.
  • the orientation of the incident ion beam 218 is governed by the dimension of the targets 212 and 214 and the substrate heater 216.
  • the ion source 218 does not have to be located in close proximity to the substrate tape 116, as the ions of ion beam 220 can travel long distances.
  • the ion source 218 is a gridded ion source.
  • HTS film such as YBCO
  • YBCO a layer of HTS material
  • the linear translation of the substrate tape 116 through the deposition chamber 210 begins in a direction that first passes by the target 212 and then by the target 214 that are arranged along the substrate tape 116 line of travel (the mechanisms for translating the substrate tape 116 are not shown).
  • the substrate heater 216 is activated.
  • a first laser source (not shown) is activated and generates a laser beam 222 that impinges upon the surface of the target 212, causing the formation of a plume 224, which emanates from that portion of the target 212 radiated by the laser beam 222 toward the substrate tape 116 in a highly forward-directed fashion, hi like manner, a second laser source (not shown) is activated and generates a laser beam 226 that impinges upon the surface of the target 214, causing the formation of a plume 228, which emanates from that portion of the target 214 radiated by the laser beam 226 toward the substrate tape 116 in a highly forward-directed fashion.
  • the plumes 224 and 228 are plasma clouds resulting from the material of targets 212 and 214, respectively, melting and subsequently evaporating explosively when impinged upon by the laser beams 222 and 226, respectively.
  • the YBCO particles contained in the plume 224 are thus deposited onto the surface of the substrate tape 116 as the tape translates through the deposition chamber 210 at a predetermined speed.
  • the substrate tape 116 experiences the initial accumulation of YBCO film via exposure to the YBCO particles contained in the plume 224 as the substrate tape 116 translates through the deposition chamber 210 at a predetermined speed. Due to exposure to the particles of the plume 224, the film thickness upon the surface of the substrate tape 116 builds from zero microns up to 1.0 to 1.5 microns. The substrate tape 116 subsequently experiences further accumulation of YBCO film via exposure to the YBCO particles contained in the plume 228 as the substrate tape 116 translates through the deposition chamber 210 at a predetermined speed. Due to exposure to the particles of the plume 228, the film thickness upon the surface of the substrate tape 116 builds from approximately 1.5 microns up to 5 microns.
  • the ion source 218 is activated and thus emits the ion beam 220.
  • the stream of positive ions forming the ion beam 220 is accelerated toward the substrate tape 116 and is focused upon the substrate tape 116 as it translates through the particles of the plume 228 where the YBCO film is further accumulating and approaching and/or exceeding a thickness of 1.5 microns.
  • the YBCO deposition process occurring via exposure to the particles of the plume 228 is influenced by the ion bombardment provided by the ion beam 220.
  • the process is shown as having two plumes, there may be multiple plumes, with the requirement that those deposition zones where the substrate has a coating in excess of 1.5 microns thick, have an ion source focused on the substrate tape as it translates through the plume defining that deposition zone.
  • the ion-assisted PLD system 200 of the present invention is capable of producing a YBCO film with a thickness in excess of 1.5 microns that has increased material density and smoothness that results in increased current capacity.
  • the ion beam 220 from the ion source 218 need not be focused upon the substrate tape 116 as it is exposed to the plume 224 where the YBCO film is forming with a thickness that is less than, for example, 1.0 to 1.5 microns. This is because, as stated above, the quality of the YBCO film mo ⁇ hology within the first 1.0 to 1.5 microns of growth is still very high and, thus, the current capacity is not inhibited.
  • ion bombardment may be used in the area where the substrate tape 116 is exposed to the plume 224 where the thickness of the YBCO film is less than 1.0 to 1.5 microns.
  • ion bombardment in the area where the substrate tape 116 is exposed to the plume 224 can assure that the film is dense, thereby providing a good template for subsequent layers.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

On utilise une source d'ions frappant la surface du substrat à enduire pour renforcer un dépôt chimique métal-oxyde en phase vapeur (MOCVD), un dépôt physique en phase vapeur ou tout autre processus utilisé pour la préparation de matériaux supraconducteurs.
EP04776126A 2003-06-05 2004-05-25 Depot sur supraconducteur haute temperature critique assiste par faisceau ionique pour bande a film epais Withdrawn EP1638701A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/456,733 US8182862B2 (en) 2003-06-05 2003-06-05 Ion beam-assisted high-temperature superconductor (HTS) deposition for thick film tape
PCT/US2004/016597 WO2005007918A2 (fr) 2003-06-05 2004-05-25 Depot sur supraconducteur haute temperature critique assiste par faisceau ionique pour bande a film epais

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EP1638701A2 true EP1638701A2 (fr) 2006-03-29
EP1638701A4 EP1638701A4 (fr) 2007-02-21

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US (1) US8182862B2 (fr)
EP (1) EP1638701A4 (fr)
JP (1) JP2007525788A (fr)
KR (1) KR20060021877A (fr)
CN (1) CN100450646C (fr)
CA (1) CA2527870A1 (fr)
WO (1) WO2005007918A2 (fr)

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EP1859071A4 (fr) * 2005-02-23 2010-04-14 Picodeon Ltd Oy Procede de depot au laser a impulsion
JP2007227086A (ja) * 2006-02-22 2007-09-06 Tokyo Electron Ltd 成膜装置および発光素子の製造方法
EP2532013B1 (fr) 2010-02-05 2016-01-13 Sunam Co. Ltd. Procédé et système de fabrication d'un fil céramique
CN102208321B (zh) * 2011-05-11 2013-06-19 江苏大学 一种激光诱导等离子体注入基材的方法及装置
CN113508190B (zh) * 2019-02-25 2024-06-25 康宁股份有限公司 多喷淋头化学气相沉积的反应器、方法及产品

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Also Published As

Publication number Publication date
WO2005007918A3 (fr) 2005-06-30
CN1798617A (zh) 2006-07-05
KR20060021877A (ko) 2006-03-08
WO2005007918A2 (fr) 2005-01-27
CN100450646C (zh) 2009-01-14
CA2527870A1 (fr) 2005-01-27
US8182862B2 (en) 2012-05-22
US20040247780A1 (en) 2004-12-09
EP1638701A4 (fr) 2007-02-21
JP2007525788A (ja) 2007-09-06

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