EP1623608A2 - Verfahren zur beschichtung von rohlingen zur herstellung von gedruckten leiterplatten (pcb) - Google Patents
Verfahren zur beschichtung von rohlingen zur herstellung von gedruckten leiterplatten (pcb)Info
- Publication number
- EP1623608A2 EP1623608A2 EP04732543A EP04732543A EP1623608A2 EP 1623608 A2 EP1623608 A2 EP 1623608A2 EP 04732543 A EP04732543 A EP 04732543A EP 04732543 A EP04732543 A EP 04732543A EP 1623608 A2 EP1623608 A2 EP 1623608A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- pcb
- blank
- acid
- protective film
- monolayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000000576 coating method Methods 0.000 title claims abstract description 32
- 239000011248 coating agent Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title description 21
- 239000002253 acid Substances 0.000 claims abstract description 31
- 230000001681 protective effect Effects 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000002356 single layer Substances 0.000 claims description 39
- 239000010410 layer Substances 0.000 claims description 33
- 229920000642 polymer Polymers 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 26
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 239000000460 chlorine Chemical group 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical group [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical group BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 125000001153 fluoro group Chemical group F* 0.000 claims description 3
- 239000011630 iodine Chemical group 0.000 claims description 3
- 229910052740 iodine Chemical group 0.000 claims description 3
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- 239000010408 film Substances 0.000 description 48
- 239000000243 solution Substances 0.000 description 42
- 239000010949 copper Substances 0.000 description 38
- 229910052802 copper Inorganic materials 0.000 description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 33
- 230000008569 process Effects 0.000 description 30
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 238000001179 sorption measurement Methods 0.000 description 17
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 14
- -1 copper PCBs Chemical class 0.000 description 14
- 230000007797 corrosion Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 11
- 239000002156 adsorbate Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000011976 maleic acid Substances 0.000 description 9
- 150000001282 organosilanes Chemical class 0.000 description 9
- 235000011007 phosphoric acid Nutrition 0.000 description 9
- 150000003573 thiols Chemical class 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 230000005660 hydrophilic surface Effects 0.000 description 7
- 230000002209 hydrophobic effect Effects 0.000 description 7
- 230000003993 interaction Effects 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000006460 hydrolysis reaction Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 230000007062 hydrolysis Effects 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 239000005052 trichlorosilane Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000007539 photo-oxidation reaction Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 description 2
- PBCKVROHSSNSDY-UHFFFAOYSA-N 2-methylprop-2-enoic acid;sodium Chemical compound [Na].CC(=C)C(O)=O PBCKVROHSSNSDY-UHFFFAOYSA-N 0.000 description 2
- KFMVKTQULBMXPB-UHFFFAOYSA-N 4-sulfanylbutyl dihydrogen phosphate Chemical compound OP(O)(=O)OCCCCS KFMVKTQULBMXPB-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- HRDIWKHWUKGADW-UHFFFAOYSA-N cyclohexane;trichloro(octadecyl)silane Chemical compound C1CCCCC1.CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl HRDIWKHWUKGADW-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- KUAIUWRGYIOTBV-UHFFFAOYSA-N dimethylsilane 2-methylprop-2-enoic acid Chemical compound C(C(=C)C)(=O)O.C[SiH2]C KUAIUWRGYIOTBV-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001782 photodegradation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000555 poly(dimethylsilanediyl) polymer Polymers 0.000 description 2
- 229920001464 poly(sodium 4-styrenesulfonate) Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- BWYYYTVSBPRQCN-UHFFFAOYSA-M sodium;ethenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C=C BWYYYTVSBPRQCN-UHFFFAOYSA-M 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 2
- QYCGBAJADAGLLK-UHFFFAOYSA-N 1-(cyclohepten-1-yl)cycloheptene Chemical group C1CCCCC=C1C1=CCCCCC1 QYCGBAJADAGLLK-UHFFFAOYSA-N 0.000 description 1
- ULGGZAVAARQJCS-UHFFFAOYSA-N 11-sulfanylundecan-1-ol Chemical compound OCCCCCCCCCCCS ULGGZAVAARQJCS-UHFFFAOYSA-N 0.000 description 1
- SHLSSLVZXJBVHE-UHFFFAOYSA-N 3-sulfanylpropan-1-ol Chemical compound OCCCS SHLSSLVZXJBVHE-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- MAGFQRLKWCCTQJ-UHFFFAOYSA-N 4-ethenylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-N 0.000 description 1
- NEJMTSWXTZREOC-UHFFFAOYSA-N 4-sulfanylbutan-1-ol Chemical compound OCCCCS NEJMTSWXTZREOC-UHFFFAOYSA-N 0.000 description 1
- KWSCEHIUIRENMZ-UHFFFAOYSA-N 6-sulfanylhexan-1-ol;4-sulfanylphenol Chemical compound OCCCCCCS.OC1=CC=C(S)C=C1 KWSCEHIUIRENMZ-UHFFFAOYSA-N 0.000 description 1
- 229940122361 Bisphosphonate Drugs 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- XXZXFSVBSJHABN-UHFFFAOYSA-N C(Cl)(Cl)Cl.C(Cl)(Cl)(Cl)Cl.CCCCCCCCCCCCCCCC Chemical compound C(Cl)(Cl)Cl.C(Cl)(Cl)(Cl)Cl.CCCCCCCCCCCCCCCC XXZXFSVBSJHABN-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- NUFHLURAIMYOAS-UHFFFAOYSA-N N-[2-[2-(prop-2-enoylamino)ethenoxy]ethenyl]prop-2-enamide Chemical compound C(C=C)(=O)NC=COC=CNC(C=C)=O NUFHLURAIMYOAS-UHFFFAOYSA-N 0.000 description 1
- 229910002656 O–Si–O Inorganic materials 0.000 description 1
- 229920000674 Poly(dimethylsiloxane)-graft-polyacrylate Polymers 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000002099 adlayer Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- FQEKAFQSVPLXON-UHFFFAOYSA-N butyl(trichloro)silane Chemical compound CCCC[Si](Cl)(Cl)Cl FQEKAFQSVPLXON-UHFFFAOYSA-N 0.000 description 1
- MXOSTENCGSDMRE-UHFFFAOYSA-N butyl-chloro-dimethylsilane Chemical compound CCCC[Si](C)(C)Cl MXOSTENCGSDMRE-UHFFFAOYSA-N 0.000 description 1
- UACGRVDRVCFSEA-UHFFFAOYSA-N butyl-dichloro-methylsilane Chemical compound CCCC[Si](C)(Cl)Cl UACGRVDRVCFSEA-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007073 chemical hydrolysis Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- IVOHULJYUAKFBG-UHFFFAOYSA-N ethanol;11-sulfanylundecanoic acid Chemical compound CCO.OC(=O)CCCCCCCCCCS IVOHULJYUAKFBG-UHFFFAOYSA-N 0.000 description 1
- VXTFFZSNEYLLHD-UHFFFAOYSA-N ethanol;6-sulfanylhexan-1-ol Chemical compound CCO.OCCCCCCS VXTFFZSNEYLLHD-UHFFFAOYSA-N 0.000 description 1
- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012457 nonaqueous media Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 208000022177 perioral myoclonia with absences Diseases 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 235000020004 porter Nutrition 0.000 description 1
- 239000005053 propyltrichlorosilane Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000007614 solvation Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 150000007944 thiolates Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- GBXOGFTVYQSOID-UHFFFAOYSA-N trichloro(2-methylpropyl)silane Chemical compound CC(C)C[Si](Cl)(Cl)Cl GBXOGFTVYQSOID-UHFFFAOYSA-N 0.000 description 1
- FMYXZXAKZWIOHO-UHFFFAOYSA-N trichloro(2-phenylethyl)silane Chemical compound Cl[Si](Cl)(Cl)CCC1=CC=CC=C1 FMYXZXAKZWIOHO-UHFFFAOYSA-N 0.000 description 1
- WDVUXWDZTPZIIE-UHFFFAOYSA-N trichloro(2-trichlorosilylethyl)silane Chemical compound Cl[Si](Cl)(Cl)CC[Si](Cl)(Cl)Cl WDVUXWDZTPZIIE-UHFFFAOYSA-N 0.000 description 1
- WEUBQNJHVBMUMD-UHFFFAOYSA-N trichloro(3,3,3-trifluoropropyl)silane Chemical compound FC(F)(F)CC[Si](Cl)(Cl)Cl WEUBQNJHVBMUMD-UHFFFAOYSA-N 0.000 description 1
- VIFIHLXNOOCGLJ-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl VIFIHLXNOOCGLJ-UHFFFAOYSA-N 0.000 description 1
- OOXSLJBUMMHDKW-UHFFFAOYSA-N trichloro(3-chloropropyl)silane Chemical compound ClCCC[Si](Cl)(Cl)Cl OOXSLJBUMMHDKW-UHFFFAOYSA-N 0.000 description 1
- SIPHWXREAZVVNS-UHFFFAOYSA-N trichloro(cyclohexyl)silane Chemical compound Cl[Si](Cl)(Cl)C1CCCCC1 SIPHWXREAZVVNS-UHFFFAOYSA-N 0.000 description 1
- HLWCOIUDOLYBGD-UHFFFAOYSA-N trichloro(decyl)silane Chemical compound CCCCCCCCCC[Si](Cl)(Cl)Cl HLWCOIUDOLYBGD-UHFFFAOYSA-N 0.000 description 1
- ADBSXCRGUFFLBC-UHFFFAOYSA-N trichloro(docosyl)silane Chemical compound CCCCCCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl ADBSXCRGUFFLBC-UHFFFAOYSA-N 0.000 description 1
- BNCXNUWGWUZTCN-UHFFFAOYSA-N trichloro(dodecyl)silane Chemical compound CCCCCCCCCCCC[Si](Cl)(Cl)Cl BNCXNUWGWUZTCN-UHFFFAOYSA-N 0.000 description 1
- RYPYGDUZKOPBEL-UHFFFAOYSA-N trichloro(hexadecyl)silane Chemical compound CCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl RYPYGDUZKOPBEL-UHFFFAOYSA-N 0.000 description 1
- LFXJGGDONSCPOF-UHFFFAOYSA-N trichloro(hexyl)silane Chemical compound CCCCCC[Si](Cl)(Cl)Cl LFXJGGDONSCPOF-UHFFFAOYSA-N 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 1
- KWDQAHIRKOXFAV-UHFFFAOYSA-N trichloro(pentyl)silane Chemical compound CCCCC[Si](Cl)(Cl)Cl KWDQAHIRKOXFAV-UHFFFAOYSA-N 0.000 description 1
- DOEHJNBEOVLHGL-UHFFFAOYSA-N trichloro(propyl)silane Chemical compound CCC[Si](Cl)(Cl)Cl DOEHJNBEOVLHGL-UHFFFAOYSA-N 0.000 description 1
- AHEMBBKAVCEZKE-UHFFFAOYSA-N trichloro(undecyl)silane Chemical compound CCCCCCCCCCC[Si](Cl)(Cl)Cl AHEMBBKAVCEZKE-UHFFFAOYSA-N 0.000 description 1
- GATGUNJRFUIHOM-UHFFFAOYSA-N trichloro-[3-(1,1,1,2,3,3,3-heptafluoropropan-2-yloxy)propyl]silane Chemical compound FC(F)(F)C(F)(C(F)(F)F)OCCC[Si](Cl)(Cl)Cl GATGUNJRFUIHOM-UHFFFAOYSA-N 0.000 description 1
- PGOAAUBOHVGLCX-UHFFFAOYSA-N trichloro-[3-(2,3,4,5,6-pentafluorophenyl)propyl]silane Chemical compound FC1=C(F)C(F)=C(CCC[Si](Cl)(Cl)Cl)C(F)=C1F PGOAAUBOHVGLCX-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0239—Coupling agent for particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0577—Double layer of resist having the same pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Definitions
- PCB printed circuit boards
- the present invention relates to a method for coating blanks for the production of printed circuit boards (PCB) and blanks coated in this way for the production of PCBs.
- PCB printed circuit boards
- a blank for PCBs epoxy resin-impregnated glass fabric with a copper coating on one or both sides is particularly suitable.
- any metal-coated carrier is subsumed below under the term PCB blank. Suitable metals are in particular platinum, titanium, silver, gold, nickel, zinc, iron or alloys thereof, alloys such as steel and brass, but also metal oxides such as copper oxide, aluminum oxide and iron oxide.
- the hole filling process has gained the most widespread use in the production of plated-through copper PCBs.
- process steps such as drilling, electroplating, photo and etching processes, etc.
- a plated-through printed circuit board made of copper is obtained.
- the electrolytic solder plating method is inexpensive in that it can produce a plated-through printed circuit board with high reliability, but has the disadvantage that it requires a long manufacturing time, a high manufacturing cost and a large amount of chemical treatment, which cause pollution and high expenditure on Require countermeasures against pollution. Therefore, it has become necessary to provide a process which is faster to manufacture and low in cost.
- the dissolved alkylimidazole compound has a high reactivity with copper and an imidazole coating is thereby formed on the surface of the copper. It is known that due to the action of hydrogen bonding among the long-chain alkydimidazole molecules and because of the van der Waals forces, the alkylimidazole molecules present in the treating aqueous solution continue to deposit on the surface of the coating and the coating thereby separates further thickened.
- the connection is cheaper, safer and easier to remove than the photosensitive polymer resist films known in the prior art, resists alkaline etching and therefore protects the copper-plated parts of the blank from an etching solution.
- the acid resist film can be made from an organic compound (oligomer or low molecular weight polymer and combinations of both), both of which contain a hydrophilic group and a hydrophobic part.
- the hydrophilic group is a polar group with a strong affinity or reactivity to copper.
- the hydrophobic part has a long alkyl group with 5 to 21 carbon atoms and has water-repellent properties.
- SAMs self-aggregating monolayers
- SAMs derived from these organic molecules are useful in blocking electron transfer or as corrosion inhibitors (they limit the diffusion of oxygen, water and aqueous ions).
- Cross-linked SAMs result in more robust films with improved degrees of protection.
- SAMs provide more flexible systems with easier processing to form partially crystalline barrier films on copper.
- the formation of barrier films is the result of a simple chemical adsorption process and thin, uniform, conformal films are produced.
- the use of the strong chemical adsorption of alkanethiols on copper has been widely used in practice.
- the preference for the long chain adsorbates has been explained in terms of larger cohesive interactions between long alkyl chains in the monolayer.
- the thiols are chemically bonded directly to the metal surface through the formation of Cu-S bonds.
- the formation is highly exothermic and provides a strong driving force for adsorption.
- the initial adsorption is fast, with the result that about 90% of the final monolayer coverage is obtained within seconds.
- the molecules undergo a slower ordering process, which can last from several minutes to several days, depending on the chemical structure of the derivatives used.
- Several factors influence the formation and packing density of the monolayers, such as the type and unevenness of the support, the solvent used, the type of adsorbate, temperature and the concentration of the adsorbate.
- Cleanliness and crystallinity of the carrier also play a crucial role in determining the compactness, which is often quantitatively assessed by the pinhole distribution (i.e. the distribution of smallest holes).
- pinhole distribution i.e. the distribution of smallest holes.
- For most wearers, rigorous cleaning treatments and wear and tear are required prior to monolayer formation. ger pretreatment necessary.
- a very dilute solution results in ordered monolayer, while a high concentration and long time favor multilayer formation (Kim, 1993).
- Chain length is another important parameter since a dense monolayer can be obtained by controlling chain length to achieve crystalline nature (Porter, 1987). Phenyl and biphenyl systems also show good packing due to the ⁇ - ⁇ interactions, but they are less stable than those of the long-chain adsorbates (Aslam, 2001).
- SAMs formed from long-chain adsorbates are superior to the shorter-chain analogues in maintaining their structure and properties due to the Van der Waals interactions.
- a film's ability to maintain its barrier properties scales exponentially with the chain length of the n-alkanethiol, with five additional methylenes in the chain resulting in films that are twice as effective in maintaining their barrier properties.
- Electrochemical measurements of heterogeneous electron transfer rates and differential capacitance indicate that the long-chain monolayers are free of pinholes, provide substantial barriers to electron transfer, and are highly resistant to ion penetration (Tao, 1994).
- Long-chain alkanethiols (HS (CH 2 ) n X) with a polar and non-polar terminal group can adsorb onto the surface of freshly prepared Cu surfaces from solution and form an aligned monolayer (Laibinis, 1992).
- ⁇ -terminated alkanethiolate monolayers consist of trans-extended chains with orientations on copper that are close to the perpendicular to the surface.
- X -OH, -CONH 2 , -COOH etc.
- Alkylsiloxane monolayers are made from alkylsilanol precursors on a variety of OH-terminated Surfaces formed.
- the surface OH groups act as active participants in the nucleation and growth of these films (Rye, 1997).
- the surface concentration of hydroxyl groups which serve as nucleation centers and anchor points in the film formation process, can have an extended influence on the growth process and the film structure of the submonolayer.
- the specific conditions of the film production such as the water content of the adsorbate solution, the solvent, the precursor concentration or the type and pretreatment of the carrier must be considered.
- the structure of the submonolayer films depends heavily on some of these parameters.
- the water concentration on the carrier surface influences the rate of surface polymerization and surface diffusion of the film molecules.
- the size of the primary islands deposited on the support also depends on the degree of polymerization of silanol precursors in the adsorbate solution, which in turn depends on a variety of factors including the water content, the reaction time
- the properties of the corrosion protection layers have been improved by chemical modification of the self-aggregating layer with various coupling agents.
- a self-aggregating monolayer of 11-mercapto-l-indecanol (MUO) (Itoh, 1995), chemically adsorbed on an oxide-free copper surface, was modified with alkyltrichlorosilanes C 8 H 37 SiCl 3 .
- the modified MUO layer is hydrolyzed with water, followed by spontaneous polymerization to form a regularly arranged polymer monolayer on the Cu surface. This film was significantly protective against aqueous and atmospheric corrosion of copper (Ishibashi, 1996).
- Alkane phosphoric acids are coatings for natural oxide surfaces of metals or alloys, such as tin, iron, steel, aluminum, copper (Alsten, 1999) and various flat oxide carriers (Ti0 2 , Nb 2 0 5 and A1 2 0 3 ).
- the films were produced by self-aggregation from a heptan-propan-2-ol solution. Contact angle measurements and X-ray fine structure spectroscopy close to the absorption edge indicate that these layers were formed similar to the thiol-gold systems and provide access to potential applications in the area of corrosion protection. Different methods for connecting self-aggregating monolayers to one another have been developed in the third dimension.
- the polymeric multilayers are highly cross-linked and much thicker than a single SAM.
- Polymeric coatings with high levels of crystallinity and tight packing are more effective in reducing the diffusion of water and have good mechanical properties (heat, shrink, impact, crack, resistance and good extensibility, adhesion and processability), which are suitable for industrial production.
- polymeric coatings such as polyimides (Bellu ⁇ ci, 1991) and polystyrene (Kurbanova, 1997) are often used to protect metals against corrosion.
- the polymeric layer acts as a thick, hydrophobic barrier that prevents the transport of water and other corrosive agents.
- the polymer can easily be produced as a thin film by spin coating processes (Stange, 1992).
- a combination of organothiol SAM and polystyrene polymer has been investigated (Jennings, 1999).
- Atomic force microscopy (AFM) images of the films revealed a complete film with no evidence of defects.
- a 40 ⁇ m cast film contains C0 2 -H-modified pole (vinyl alcohol) and shows good acid resistance. If it is converted to the salt form by adding NaOH, it is easily dissolved in water (JP-10/060207 A).
- a carboxylic acid terminated SAM with a polymer multilayer which poly (ethyleneimine) and poly (octadecen-alt-maleic anhydride) (POMA, Mw 30,000) or poly (styrene-alt-maleic anhydride (PSMA) as effective Corrosion protection (Kl-based commercial gold etching) gave the best result (Huck, 1999).
- poly (ethyleneimine) and poly (octadecen-alt-maleic anhydride) (POMA, Mw 30,000) or poly (styrene-alt-maleic anhydride (PSMA) as effective Corrosion protection (Kl-based commercial gold etching) gave the best result (Huck, 1999).
- PSMA poly (styrene-alt-maleic anhydride)
- Kl-based commercial gold etching Kl-based commercial gold etching
- the acid-resistant protective film of a blank PCB consists of at least 2 layers which are chemically bonded to one another or to the metallic surface of the blank PCB. Due to the chemical bond Probably the first monolayer with the metallic surface of the PCB blank as well as every further monolayer with the underlying monolayer, it is possible to provide extremely thin protective films while avoiding pinholes due to the topography of the metallic surface of the blank or local wetting problems.
- the protective film of the PCB blank preferably has a thickness of less than 20 ⁇ m, more preferably less than 10 ⁇ m and most preferably less than 4 ⁇ m.
- the protective film of the PCB blank preferably has a thickness of less than 20 ⁇ m, more preferably less than 10 ⁇ m and most preferably less than 4 ⁇ m.
- the problem of channel formation during the manufacture of the PCBs in particular can be prevented.
- this problem is that in most laser-assisted PCB manufacturing, the width of the trace combustible into the surface of the coated blank PCB depends on the thickness of the protective film in that a ratio of 1: 1 (thickness of the protective film plus thickness of the Metal coating of the blank: width of the track) should not be undercut.
- the at least 2 layers of the protective film are each formed by a compound of the general formula
- W represents -SH, -Si (X) 3 , -Si (OR) X 2 , -Si (0R) 2 X, -Si (OR) 3, -COOH, -P0 3 H 2 ,;
- X represents fluorine, chlorine, bromine or iodine
- Y represents -OH, COOH, -P0 3 H 2 .
- the invention is based on the knowledge that, due to the functional group W, the above-mentioned classes of compounds have a high degree of adsorption power with respect to metallic surfaces and a covalent bond is formed during the adsorption.
- Conventional pure metals such as copper, in particular also the elements of the sub-group of the periodic table (e.g. platinum, titanium, silver, gold, nickel, zinc, iron or alloys thereof), alloys such as steel and brass, but also metal oxides such as copper oxide, aluminum oxide and Iron oxide, can be used as metal coatings on the PCB blanks. Due to the strong adsorption force of the W-functional group in relation to the metallic surface, it is possible to deposit a monomolecular coating (monolayer) on the metallic surface. As a result, only a small amount of adhesive substance is required, which is cost-effective. Furthermore, the chemical bond between the monolayers or between the first monolayer and the metallic surface of the blank PCB overcomes wetting problems.
- the adhesive substance is a thiol (-SH) -, silane (-Si (Cl) 3 , -Si (0R) 2 Cl, -Si (OR) Cl 2 , -Si (OR) 3 ) -, organophosphoric acid (-P0 3 H 2 ) - or organcarboxylic acid (-COOH) group as W, which has a covalent bond to the metal surface (such as Cu-S) can train.
- thiol (-SH) -, silane (-Si (Cl) 3 , -Si (0R) 2 Cl, -Si (OR) Cl 2 , -Si (OR) 3 ) -, organophosphoric acid (-P0 3 H 2 ) - or organcarboxylic acid (-COOH) group as W which has a covalent bond to the metal surface (such as Cu-S) can train.
- adsorption with respect to the metallic surface occurs, which is spontaneous to a large extent, which produces
- R alkyl radical, halogenated alkyl radical, alkyl radical or halogenated alkyl radical with hydroxyl group in the chain or aromatic group
- R alkyl radical, halogenated alkyl radical, alkyl radical or halogenated alkyl radical with hydroxyl group in the chain or aromatic group
- n is particularly preferably an integer from 10 to 22.
- the chain length of R and thus to a certain extent also the thickness of the monolayer can be varied from n.
- R can also be an aromatic unit and preferably has halogen and / or hydroxyl substituents in the aromatic system. Depending on the nature of the substituents, these in turn can influence the bond to the metallic surface or the further coating of the monofilm. As a result, the film can form an optimal, dense, hydrophobic space to prevent an etchant from reacting with the metal surface.
- Y preferably stands for -OH, -COOH or -P0 3 H 2 and can therefore react easily in the case of a homocoating with the functionality group W of the or a further compound W (R) Y to form a multilayer.
- a hydroxyl group reacts with a silane molecule to form a covalent bond (for example, an O-Si-O bond.
- the first layer is formed by a compound of the general formula
- Z represents Si (OR 2 ) 2 X, -Si (OR 2 ) X 2 , -SiX 3 , -P0 3 H 2 ,
- R, X and n has the meaning given above.
- n is particularly preferably in each case an integer from 10 to 22 independently of one another.
- the acid-resistant protective film of a blank PCB preferably has an organo-soluble or alkali-soluble polymer as the top or cover layer, which polymer has been selectively applied to the surface of the multilayer.
- the coating of the polymer on the protective film according to the invention protects the functionality L. In this way, sufficient adhesion between the polymer and the multilayer is generated.
- the task of the polymer film is to improve the mechanical properties of the multilayer, such as heat, shrinkage, impact, crack resistance as well as adhesion and processing ability. A number of polymers can be used for this.
- alkali-soluble polymer it is composed of acrylic acid, sulfonic acid, maleic acid and their ester copolymers rn.it S / x' ⁇ . ⁇ ., Oiiti-e-thylsil n, styrene, olefin, isobutylene, vinyl, ethene, imide , Methylstyrene, acrylamido, vinyl ether, ethylene-co-vinyl acetate, ethylene etc.
- the typical alkali-soluble polymer resins are based on a polymer which contains a -S0 3 H, -COOH group, or its alkali metal salt or its ester, for example Poly (di ethylsiloxane) graft polyacrylate, poly (acrylic acid), poly (sodium 4-styrene sulfonate), poly (4-styrene sulfonic acid co-maleic acid), poly (styrene / ⁇ -methyl styrene / acrylic acid), poly (dimethylsilane) monomethacrylate, poly (2-acrylamido-2-methyl-l-propanesulfonic acid), poly (2-acrylamido-2-2methyl-l-propanesulfonic acid-co-styrene), poly (styrene-alt-alic acid), poly (methyl vinyl ether-old maleic acid), poly (sodium methacrylic acid), poly (maleic acid-co-olefin
- the present invention further relates to a method for coating PCB blanks with an acid-resistant protective film, comprising the following steps: a) optionally pre-cleaning, drying, activating and / or surface treatment of the blank PCB b) forming a first monolayer on the metal surface of the blank PCB by applying a compound of the general formula
- W represents -SH, -Si (X) 3 , -Si (0R) X 2 , -Si (OR) 2 X, -Si (OR) 3 , -COOH, -P0 3 H 2 ,;
- X represents fluorine, chlorine, bromine or iodine
- Y represents -OH, COOH, -P0 3 H 2 .
- c) Forming at least one further monolayer on the first monolayer of the .PCB blank by applying either: c) l) a compound of the general formula
- Z represents Si (OR 2 ) 2 X, -Si (OR 2 ) X 2 , -SiX 3 , -P0 3 H 2 ,
- R, X and n have the meaning given above, d) optionally repeating step c) a number of times and e) optionally forming a cover layer on the uppermost monolayer of the PCB blank from an organo-soluble or alkali-soluble polymer.
- n preferably independently denotes an integer from 10 to 22.
- the compounds for providing the individual monolayers are applied in solution.
- connection for the provision of the individual monolayers are preferably applied by immersing the blank PCB in corresponding solutions of the individual connections.
- immersion is understood to mean any process by which the blank PCB is brought into contact with the corresponding solutions of the individual connections, for example by direct passage through the solution (s), by meniscus coating or by roller coating.
- the state of the metallic surface of the PCB blank can influence the molecular organization, monolayer coverage and the thickness of an adsorbed monolayer.
- the blanks are optionally pre-cleaned, for example, by a chemical process (Ingo-pure, NPS and HC1) and then dried in hot air. Afterwards, the blanks can be immersed in isopropanol for surface activation and rinsed with water. Thereafter, if desired, suitable surface treatment methods, such as chemical etching using an inorganic acid (HC1, HN0 3 , H 3 P0 4 , H 3 B0 3 , H 2 S0 4 , HC10 4 etc.), polishing and cathodic reduction can also be used Polishing the blank can be applied.
- suitable surface treatment methods such as chemical etching using an inorganic acid (HC1, HN0 3 , H 3 P0 4 , H 3 B0 3 , H 2 S0 4 , HC10 4 etc.), polishing and cathodic reduction can also be used Polishing the blank
- HCl etching results in an oxide-free surface
- Cl " in HC1 can be adsorbed onto the copper surface during the etching, which can reduce the adsorption capacity of the surface to form monolayers and lead to corrosion on the cleaned surface.
- the metallic surface of the blank consists of copper and is etched in an oxidizing acid such as nitric acid
- an oxide-copper surface can be formed, which seems to favor the special adsorption of organosilanes ..
- the upper layer of the copper atoms was removed from the copper surface by phosphoric acid or boric acid (non-oxidizing acids) removed and the cleaned surface can be used for a can be kept in air for a relatively long time without significant oxidation.
- nitric acid (4N), phosphoric acid (20% vol / vol), orthophosphoric acid (66% vol / vol) and boric acid (20% vol / vol) etching were preferred for a certain time (from 5 min up to several hours, typically 5 min) at room temperature, followed by purging in water and drying in nitrogen or an oven at 60-100 ° C to form a fresh, active and hydrophilic surface which demonstrates the chemical adsorption of alkanethiol, Alkane silane and alkane phosphoric acid strongly favored.
- the copper-clad PCB blank After washing twice with anhydrous ethanol, the copper-clad PCB blank is immersed in an ethanol solution of thiols at room temperature for a certain time (from 1 min to several days, typically 5-15 min) in order to chemically adsorb the thiol to complete on the copper surface. Excess thiol can be removed from the support surface by rinsing the surface with ethanol, after which the blank PCB is oven dried (from 30-150 ° C, typically 80 ° C).
- the organothiols used, for example, when performing the monolayer adsorption are based on the structure:
- W (R) Y with the meanings given above, e.g. 1-dodecanethiol, 1-octadecanethiol, 3-mercapto-l, 2-pr ⁇ pandiol; 4-mercaptophenol 6-mercapto-1-hexanol, 3-mercapto-l-propanol, 11-mercapto-l-undecol, 2-mercaptoethanol, 4-mercapto-l-butanol or 4-mercaptobutylphosphoric acid.
- either the above process for forming a second monolayer is repeated or the mono-coated PCB blank obtained in the above process at room temperature in, for example, a cyclohexane solution from organosilanes from 1 min up to submerged for several days (typically 5-15 min).
- organosilanes typically 1 min up to submerged for several days (typically 5-15 min).
- Other solvents that can be used in the application of organosilane are, for example, toluene, a mixture of hexadecane-carbon tetrachloride-chloroform 80: 12: 8, n-hexane, tetrahydrofuran, etc.
- the surface can be rinsed thoroughly with chloroform to remove excess organosilane, followed by placing the PCB blank treated in this way in an oven (temperature from 50 ° C. to 150 ° C. for 1 min to several hours) in order to remove the solvents and to harden the multilayer, as a result of which crosslinking can also be formed in the multilayer .
- the PCB blanks are then placed at normal temperature in a high humidity box (over 85%) for wet hardening (from several minutes to several days). Wet hardening is favorable for the further conversion from Si-Cl bond to Si-O bond and for uniform network formation in the multilayer. (d) Form a multi-coating
- the compounds for multilayer formation are based on the above-mentioned compound of the general formula
- Z (R) L having the above meanings, including: methyltrichlorosilane, ethyltrichlorosilane ethyldichlorosilane, propyltrichlorosilane, butyltrichlorosilane, isobutyltrichlorosilane, Pentyltrichlorsilan, hexyltrichlorosilane, octyltrichlorosilane, decyltrichlorosilane, decyl, dodecyltrichlorosilane, ethyldichlorosilane dodecyl, octadecyl-me- thyldichlorsilan, octadecyltrichlorosilane, benzyltrichlorosilane, Undecyltrichlorosilane, 2- (bicyclo-eptenyl) dimethylchlorosilane,
- the defect diameters of SAMs which are used as etch-resistant films, are sometimes too high to make PCB blanks coated in this way directly usable in the industrial production of high-resolution electronic devices.
- SAMs which are used as etch-resistant films
- the multi-layer PCB blank is treated with a polymer base solution.
- the aim of the treatment is: (l) to convert any remaining Si-Cl bonds into Si-OH, a silanol group, so that cross-linking can occur between the monolayers and (2) one on the blank PCB to provide a thin polymer film as a cover film, which cover film is effective in reducing the diffusion of water and has good mechanical properties (heat, shrink, impact, tear resistance and good elongation, adhesion and processing ability), which it for industrial Makes production suitable.
- the blank PCB is then dried in an oven at 50-150 ° C (typically 120 ° C) for 5-30 minutes (typically 15 minutes).
- the typical alkali-soluble polymer resins are based on a polymer which contains a -S0 3 H or -COOH group, or its alkali metal salt or its ester, for example poly (dimethylsiloxane) graft polyacrylate, poly (acrylic acid), poly (sodium 4-styrene sulfonate), poly (4-styrene sulfonic acid-co-maleic acid), poly (styrene / ⁇ -methylstyrene / acrylic acid), poly (dimethylsilane) -monomethacrylate, poly (2-acrylamido-2-methyl-l -propanesulfonic acid), poly (2-acrylamido-2-2methyl-l-propanesulfonic acid-co-styrene), poly (styrene-old-maleic acid), poly (methyl-vinylether-old-maleic acid), poly (sodium methacrylic acid), poly (maleic acid) -co-
- the principle of the hydrophobic-hydrophobic or hydrophilic-hydrophilic combination should be observed.
- the interfacial agents or specific interactions between the polymers are believed to reduce interfacial tension and thereby improve interfacial adhesion to efficiently transfer stress from one phase to the other phase. These specific interactions include hydrogen bonding, charge exchange complex formation, ion-dipole and ion-ion interaction.
- the acid-resistant protective layer is first coated on the copper-plated blank PCB and then patterned with a C0 2 or UV laser to destroy it to form a special configuration.
- the unwanted copper is then etched out at the appropriate, protective layer-free points by HCl-CuCl-CuCl 2 solution.
- the problem now is to completely remove the remaining acid-resistant protective layer.
- the detachment process includes both polymer detachment and SAMs detachment.
- Polymer detachment The polymer used for this purpose is alkali-soluble or organic-soluble and can therefore be easily separated with the appropriate solutions or solvents.
- Multi-layer separation The remaining problem is how to remove the individual monolayers.
- the SAMs are chemically bound to the carrier and the bonds should break either by chemical processes (hydrolysis, oxidation) or by photo processes (photo degradation).
- the SAM film is highly hydrophobic. It is only soluble in organic solvents.
- ODS submonolayers which are adsorbed on Cu carriers, are subjected to UV ozone oxidation (UV / ozone can be generated by a low-pressure mercury quartz lamp 185 or / and 254 nm), which, for example, leaves behind the two-dimensional cross-linked Si-0 network of the siloxane monolayer.
- UV ozone oxidation UV ozone oxidation
- UV / ozone can be generated by a low-pressure mercury quartz lamp 185 or / and 254 nm
- Photo-oxidation from RS to RS0 3 is too slow to be convenient, and the rate of this reaction can be accelerated by transition metal cations.
- Alkanesulfonates, which result from photo-oxidation, are only weakly bound to copper supports and can therefore be easily removed from its surface.
- the photo-oxidation process using a low-pressure mercury quartz lamp is only used in the laboratory for small sample treatment and is only of limited suitability for industrial PCB processes.
- the resist layer (that is, acid-resistant protective layer and polymer layer) is treated by a chemical hydrolysis method, whereby the resist layer can be removed in a short time.
- the stripping system used in this invention is as follows: (1) Organophosphoric acid and organosilane can be hydrolyzed under alkaline conditions. Therefore, the purpose of choosing an alkali-organic system is the solubility of the polymer and the long alkyl chain as well as the hydrolysis of PO, Si-O bonds.
- the organic alkali solution is based on a salt of an alkali metal (sodium or potassium hydroxide) dissolved in an alcohol (ethanol, 2-propanol, 1-butanol, isobutanol, 2-butanol, etc.).
- concentration of the solution is in the range of 1% to 30% w / w. (typically 20%).
- the temperature is raised to the range of 25 to 80 ° C (typically 60 ° C).
- polymeric substances and SAMs of the acid-resistant protective layer can be easily and cleanly removed from finished PCBs by the above processes without etching the underlying metal, in particular copper and copper alloys.
- Copper-clad PCB blanks are cleaned in 20% phosphoric acid solution at room temperature for 5 min, rinsed in water and oven dried at 100 ° C for 5 min to form a hydrophilic surface.
- the PCB blanks are then immersed in a 1.5% 6-mercapto-1-hexanol-ethanol solution at room temperature for 15 minutes, rinsed with pure ethanol and then dried in an oven at 100 ° C. for 5 minutes.
- a further monolayer is created by immersing the support in 3% octadecyltrichlorosilane-cyclohexane solution at room temperature for 15 minutes and then placing the support in an oven for curing at 120 ° C. for 10 minutes and thickening by repeating the above procedure.
- the PCB blanks are then wet cured in a highly humid atmosphere (over 85% LF) for several hours at room temperature.
- the coated PCB blanks are etched with a strong acid etching solution (HCl-CuCl 2 -CuCl) and then with a (NaOH / 2-propanol 20%) - Solution treated at 60 ° C for 5 min.
- the hydrolysis process can be accelerated by immersing it in an ultrasonic bath.
- the inorganic and organic impurities or residues are removed from the metal surface using an HF / H 2 0- (1%) and HC1 / H 2 0- (5%) acid solution.
- the PCB blanks are rinsed with water and dried in the oven or hot air. There- a very clean and structured copper-clad surface was obtained on the PCB blanks.
- Copper-clad PCB blanks are cleaned by removing the natural oxide by immersing them in a dilute HN0 3 solution (10% in deionized water) for 5 minutes. Then, after repeated cleaning with water and isopropyl alcohol, the PCB blanks are dried in a stream of nitrogen gas to form a hydrophilic surface.
- the first monolayer is then formed by immersing the freshly cleaned PCB blanks in a 3% solution of octadeyltrichlorosilane, dissolved in hexadecane, at room temperature for 15 minutes.
- the PCB blanks provided with a first monolayer are cured in the oven at 120 ° C. for 10 min and then the process is repeated.
- the double coating creates a homogeneous film on the surface of the PCB blanks.
- the PCB blanks are then wet-cured for one hour in a high humidity box (humidity above 85% LF).
- Copper-plated PCB blanks are immersed in 4N HC1 solution for 5 min.
- the PCB blanks are then rinsed with water and dried in the oven at 80 ° C for a short time.
- the clean PCB blanks can be wetted by water, which demonstrates a hydrophilic surface. The cleaning process is carried out less than 1 hour before the first monolayer production in order to minimize contamination.
- the PCB blanks were stored in a chamber with a controlled relative humidity of 55%.
- the cleaned PCB blanks are then immersed in a 3% 1-oxadadecanethiol / ethanol solution at room temperature for 15 minutes, rinsed with pure ethanol and then dried in an oven at 100 ° C. for 5 minutes.
- the coating process can be repeated any number of times.
- coated PCB blanks are then in 3% polystyrene Methacrylate-terminated cyclohexane solution dip-coated and dried in an oven at 120 ° C for 15 min.
- Copper-clad PCB blanks are cleaned in 20% phosphoric acid solution at room temperature for 5 min, rinsed in water and oven dried at 100 ° C for 5 min to form a hydrophilic surface.
- the pretreated PCB blanks were then immersed in a 1.5% 11-mercaptoundecylic acid-ethanol solution at room temperature for 15 minutes, rinsed with pure ethanol and then dried in an oven at 100 ° C. for 5 minutes.
- JP-63/005591 A Hata Hajime, Kinoshita Masashi, Kamagata Kazuo. JP-10/060207 A, Nishiguchi Hiroshi, Watanabe Toshio, Kitada Akira.
- EP-0 364 132 A Susumu Matsubara, Shuji Yoshida, Masahiko Minagawa, Daikichi Tachibana.
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- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT0072603A AT412094B (de) | 2003-05-13 | 2003-05-13 | Verfahren zur beschichtung von rohlingen zur herstellung von gedruckten leiterplatten (pcb) |
| PCT/AT2004/000168 WO2004103040A2 (de) | 2003-05-13 | 2004-05-13 | Verfahren zur beschichtung von rohlingen zur herstellung von gedruckten leiterplatten (pcb) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1623608A2 true EP1623608A2 (de) | 2006-02-08 |
Family
ID=31192768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP04732543A Withdrawn EP1623608A2 (de) | 2003-05-13 | 2004-05-13 | Verfahren zur beschichtung von rohlingen zur herstellung von gedruckten leiterplatten (pcb) |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20080032109A1 (de) |
| EP (1) | EP1623608A2 (de) |
| JP (1) | JP2007505506A (de) |
| AT (1) | AT412094B (de) |
| WO (1) | WO2004103040A2 (de) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004003784B4 (de) * | 2004-01-23 | 2011-01-13 | Ormecon Gmbh | Dispersion intrinsisch leitfähigen Polyanilins und deren Verwendung |
| US7524535B2 (en) * | 2004-02-25 | 2009-04-28 | Posco | Method of protecting metals from corrosion using thiol compounds |
| DE102004030388A1 (de) * | 2004-06-23 | 2006-01-26 | Ormecon Gmbh | Artikel mit einer Beschichtung von elektrisch leitfähigem Polymer und Verfahren zu deren Herstellung |
| DE102005032142B4 (de) | 2005-07-07 | 2014-10-09 | Infineon Technologies Ag | Verfahren zum Kontaktieren von Halbleiterbauteilen mit einem Testkontakt |
| JP5114714B2 (ja) * | 2006-09-13 | 2013-01-09 | エントーネ ゲーエムベーハー | 導電性重合体と貴金属/準貴金属の塗膜を持つ物品およびその製造方法 |
| CA2702468A1 (en) | 2007-10-12 | 2009-04-23 | University Of Connecticut | Therapeutic applications of fatty acid amide hydrolase inhibitors |
| WO2010085319A1 (en) * | 2009-01-22 | 2010-07-29 | Aculon, Inc. | Lead frames with improved adhesion to plastic encapsulant |
| DE102009023350A1 (de) | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements |
| US8415252B2 (en) * | 2010-01-07 | 2013-04-09 | International Business Machines Corporation | Selective copper encapsulation layer deposition |
| CN103477728B (zh) * | 2011-03-30 | 2016-05-18 | 富士胶片株式会社 | 印刷配线基板及其制造方法、印刷配线基板用的金属表面处理液以及集成电路封装基板 |
| CN104937694B (zh) * | 2013-01-21 | 2018-12-28 | 卡姆特有限公司 | 在多组分表面上的表面预处理和液滴铺展控制 |
| CN109252168B (zh) * | 2018-11-29 | 2024-01-12 | 珠海市智宝化工有限公司 | 一种高效活化酸性蚀刻液的装置及其方法 |
| CN114885510B (zh) * | 2022-04-18 | 2023-07-04 | 安捷利美维电子(厦门)有限责任公司 | 一种减少铜面油墨黑点污染的方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834921A (ja) * | 1981-08-27 | 1983-03-01 | Nec Corp | 半導体装置の製造方法 |
| JPS6190492A (ja) * | 1984-10-11 | 1986-05-08 | 四国化成工業株式会社 | 銅スル−ホ−ルプリント配線板の製造方法 |
| EP0364132A1 (de) * | 1988-09-29 | 1990-04-18 | Shikoku Chemicals Corporation | Verfahren zur Herstellung eines Konversionsüberzuges auf Oberflächen aus Kupfer oder Kupferlegierungen |
| JPH0497152A (ja) * | 1990-08-09 | 1992-03-30 | Kansai Paint Co Ltd | 光重合性組成物からパターンを形成する方法 |
| DE69329536T2 (de) * | 1992-03-02 | 2001-06-07 | Matsushita Electric Industrial Co., Ltd. | Chemisch adsorbierter Film und Verfahren zur Herstellung desselben |
| DE19944908A1 (de) * | 1999-09-10 | 2001-04-12 | Atotech Deutschland Gmbh | Verfahren zum Bilden eines Leitermusters auf dielektrischen Substraten |
| JP4589582B2 (ja) * | 2001-08-30 | 2010-12-01 | 富士通株式会社 | レジストパターンの形成方法 |
-
2003
- 2003-05-13 AT AT0072603A patent/AT412094B/de not_active IP Right Cessation
-
2004
- 2004-05-13 JP JP2006529421A patent/JP2007505506A/ja active Pending
- 2004-05-13 WO PCT/AT2004/000168 patent/WO2004103040A2/de not_active Ceased
- 2004-05-13 EP EP04732543A patent/EP1623608A2/de not_active Withdrawn
- 2004-05-13 US US10/556,514 patent/US20080032109A1/en not_active Abandoned
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2004103040A2 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004103040A2 (de) | 2004-11-25 |
| WO2004103040A3 (de) | 2005-06-09 |
| ATA7262003A (de) | 2004-02-15 |
| AT412094B (de) | 2004-09-27 |
| US20080032109A1 (en) | 2008-02-07 |
| JP2007505506A (ja) | 2007-03-08 |
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