EP1606600A2 - Element de detection a structures de barres en porte-a-faux comprenant des semi-conducteurs a base d'un nitrure du groupe iii - Google Patents

Element de detection a structures de barres en porte-a-faux comprenant des semi-conducteurs a base d'un nitrure du groupe iii

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Publication number
EP1606600A2
EP1606600A2 EP04721498A EP04721498A EP1606600A2 EP 1606600 A2 EP1606600 A2 EP 1606600A2 EP 04721498 A EP04721498 A EP 04721498A EP 04721498 A EP04721498 A EP 04721498A EP 1606600 A2 EP1606600 A2 EP 1606600A2
Authority
EP
European Patent Office
Prior art keywords
semiconductor layer
substrate base
sensor element
semiconductor
homogeneous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04721498A
Other languages
German (de)
English (en)
Inventor
Mike Kunze
Ingo Daumiller
Peter Benkart
Erhard Kohn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microgan GmbH
Original Assignee
Microgan GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microgan GmbH filed Critical Microgan GmbH
Publication of EP1606600A2 publication Critical patent/EP1606600A2/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00142—Bridges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
    • G01P15/0922—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up of the bending or flexing mode type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges

Definitions

  • Sensor elements with self-supporting beam structures made of semiconductors based on Group III nitride
  • the present invention relates to a sensor element which has a semiconductor structure based on group III nitride (for example made of GaN, A1N or InN), the change in a physical variable (for example a static and / or dynamic pressure - for example in flows of gases or fluids - acoustic vibrations, acceleration, deflection or temperature) is determined in that the semiconductor structure converts the change in the physical quantity by means of its piezoelectric properties into an electrical output quantity or a corresponding output signal.
  • group III or main group III is used as an abbreviation for the third main group of the periodic table of the elements.
  • Microsensors based on semiconductor structures based on group III nitride are already known from the prior art.
  • US Pat. No. 0,066,319 shows a micromembrane which is coupled to a substrate. A change in pressure causes the membrane to bulge. This bulge is detected with the help of a stress sensor attached to the membrane and converted into an electrically measurable signal by the stress sensor.
  • a semiconductor sensor element which, on the basis of a substrate, has an integrated, self-supporting, homogeneous semiconductor layer in such a way that the self-supporting, integrated, homogeneous semiconductor layer changes a physical quantity by changing its spatial state (for example a deflection) is converted by means of its piezoelectric properties into a measurable electrical output signal which can be derived directly from the homogeneous semiconductor layer by means of lead contacts attached directly to, on and / or below the homogeneous semiconductor layer.
  • Another object of the invention is to provide a corresponding measurement method and a corresponding method for structuring semiconductor sensor elements according to the invention.
  • a sensor element according to claim 1 by a measuring method according to claim 50 and by a semiconductor structuring method according to claim 53.
  • Advantageous developments of the sensor element according to the invention and the method according to the invention are described in the respective dependent claims.
  • the term “homogeneous semiconductor layer” is understood to mean a layer constructed uniformly in the entire layer volume from a semiconductor material based on Group III nitride (for example GaN).
  • a heterostructure has at least two homogeneous semiconductor layers arranged on or next to one another (for example AlGaN / GaN heterostructure: AlGaN layer on GaN layer).
  • the group III nitride-based semiconductor structures used according to the invention are distinguished from conventional structures by their piezoelectric properties. These can be used for mechanical sensors, since a polarization which is rectified across the crystal and depends on the tension in the material arises, which can be evaluated, for example, by changing the charge carrier density on the surface or at the interface with another material (heterostructure, for example AlGaN / GaN). The charge carriers result directly from the polarization.
  • the basis of the sensors according to the invention is a mechanical change in the grid, which results in an electrically measurable change in the structure. As is known from theory, the polarization in the material and thus the charge carrier density in a heterostructure channel change with the change in
  • Lattice constants are thus a heterostructure channel, since a sufficient charge carrier density can be reliably achieved in this channel.
  • the exploitation of the properties of a heterostructure or the heterostructure channel is however, a sensor structure according to the invention is not absolutely necessary: it has been shown that a sufficiently high signal-deflection ratio can also be achieved with homogeneous semiconductor layers (for example made of undoped GaN). Only one bulk material (GaN, InN, A1N, AlGaN, InGaN) is therefore sufficient for sensor applications.
  • the piezoelectric material properties can be used to produce structures that do not require doping with foreign atoms in order to generate the conductivity. Combination with " doping " is also possible (p- or n-doping, for example of the bulk material for better contact). Since the piezo properties of the material the free charge carriers in the bulk materials or
  • Influencing structures the manipulation of the piezo properties is used according to the invention to create sensor components. Here 'acted in the component te via an external influence on the free Ladungslicdich-.
  • the components produced on machinable substrates are partially or completely exposed from the substrate.
  • nitrides also enable the integration of the sensor components with electrical or electronic circuits. These can be, for example, compensation circuits (for example against external influences) or amplifier circuits (for example for signal amplification).
  • a semiconductor sensor element has a substrate base and a homogeneous semiconductor layer based on nitrides of main group III elements arranged on this substrate base, the surface of the homogeneous semiconductor layer facing the substrate base at least partially not directly adjoining the substrate base or a distance from it Homogeneous semiconductor layer facing surface of the substrate base and is characterized in that at least two electrical lead contacts for deriving an electrical output signal that can be generated by the homogeneous semiconductor layer due to a change in a physical quantity to be determined with the aid of the semiconductor sensor element directly on, at and / or below the homogeneous Semiconductor layer are arranged or are integrated into this.
  • At least one of the contacts is arranged in the region of the region (distance region) of the homogeneous semiconductor layer that is not directly adjacent to the substrate base or at a distance from the surface of the substrate base, and at least one of the contacts in the region of a directly on the region of the homogeneous semiconductor layer which is adjacent to the substrate base or has no distance from the surface of the substrate base (non-spaced region) orderly.
  • the homogeneous semiconductor layer has an elevation region or mesa region which, in the direction perpendicular to the surface of the substrate base facing the homogeneous semiconductor layer, has a greater thickness than a region in this direction in a direction parallel to that of the homogeneous semiconductor layer-facing surface of the substrate base adjacent region (non-mesa region) of the homogeneous semiconductor layer.
  • the elevation area or mesa area is arranged in such a way that it extends in a direction parallel to the surface of the substrate base facing the homogeneous semiconductor layer partially over the distance area of the homogeneous semiconductor layer and that it partially extends over the non-distance area of the homogeneous semiconductor layer extends.
  • the transition from the spacing region to the non-spacing region takes place in the direction parallel to the surface of the substrate base facing the homogeneous semiconductor layer in the region of the center of the elevation region or mesa region.
  • at least one of the contacts is arranged directly on and / or in the region of an outer edge of the elevation region or mesa region.
  • the homogeneous semiconductor layer in the non-mesa region in the direction perpendicular to the surface of the substrate base facing the homogeneous semiconductor layer has a thickness of more than 0.2 ⁇ m and / or less than 50 ⁇ m, in particular more than 0.5 ⁇ m and / or less than 5 ⁇ m, and / or the homogeneous semiconductor layer has the thickness of the non-mesa region and additionally one in the elevation region or mesa region Thickness ' of more than 20 n and / or less than 1000 n, in particular of more than 50 nm and / or less than 300 n.
  • the substrate base consists of silicon.
  • the homogeneous semiconductor layer contains Al x Ga ⁇ _ x N or In x Ga ⁇ - x N or In x Al ⁇ _ x N with a relative element content of 0 x 1.0 1.0. This is particularly preferred. homogeneous semiconductor layer made of GaN.
  • a space area that is present due to the distance between the homogeneous semiconductor layer and the substrate base is not filled, so that the semiconductor layer is at least partially self-supporting with respect to the substrate base. In a further variant, this spatial area can also be at least partially filled with a non-metallic and non-semiconducting material.
  • the material is to be selected in such a way that in particular the heat transport properties and / or the mechanical properties and / or the high-frequency properties of the sensor element can be improved.
  • fillers 'are individually or generally used in any combination' may include Si0 2, Si x N y (in particular SiN), DLC (diamond-like carbon), diamond, silicone-like filling materials, A1 2 0 3, thermally conductive plastics (especially Dow Corning Q3-3600, l-41xx and / or SE44xx).
  • the homogeneous semiconductor layer can either be undoped or p-doped or n-doped.
  • a heterostructure is used instead of a bulk material:
  • the cover layer is preferably arranged only on or on the elevation area or mesa area, but not in the non-mesa area.
  • the cover layer particularly preferably consists of AlGaN, in particular with an element content of 0.1 y y 0.3 0.3, particularly preferably of 0.15 y y 0.2 0.25.
  • the cover layer can be mechanically tensioned.
  • the dopant content is advantageously up to approximately 10 20 per cm 3 .
  • Silicon and / or magnesium is advantageously used as the dopant. This can be volume doping and / or pulse doping.
  • the electrical discharge contacts described are advantageously p- and / or n-contacts.
  • the electrical lead contacts are advantageously arranged in such a way that they can be used to derive an electrical output signal (electrical output signal created in the heterostructure channel) in the transition region between the homogeneous semiconductor layer and the cover layer.
  • the electrical discharge contacts are advantageously arranged directly at the interface between the homogeneous semiconductor layer and the cover layer.
  • the electrical lead contacts advantageously have a metallization which contains or consists of Ti and / or Al for the n-contact and / or which contains or consists of Ni and / or Au for the p-contact.
  • the thickness of the metallization here is advantageously up to 1000 nm, in particular preferably up to 200 nm.
  • the physical quantity to be determined can be, for example, the pressure, the temperature, a force, a deflection or an acceleration.
  • a change in the spatial state of the homogeneous semiconductor layer or the heterostructure can be a change in shape, volume, structure, one of the surfaces or simply a deflection or bulge with respect to the substrate base.
  • the output signal can in particular in the form of a. Current, a voltage or an electrical resistance or change thereof are detected.
  • the. homogeneous semiconductor layer is connected to the substrate base at one or more anchor points in such a way that at least part of the part of the homogeneous semiconductor layer not connected to the anchor point or the anchor points is self-supporting with respect to the substrate base and by a change in the physical quantity to be determined in Relative to the substrate base is directly deflectable.
  • the sensor element or the homogeneous semiconductor layer is designed as a functional unit with integrated electrical or electronic circuits made of semiconductor structures based on main group III nitride.
  • the circuits here preferably have diode structures, transistor elements or temperature sensor elements. They can represent compensation circuits or amplifier circuits, in particular for signal amplification.
  • the output signal can be derived by means of Schottky contacts.
  • the circuits can be designed as Wheatstone bridges.
  • the sensor itself is a self-supporting, active component that converts the change in physical size directly into an electrical signal, the sensor itself can be pre-stressed or pre-deformed. This enables temperature compensation, for example.
  • Sensor elements according to the invention can be designed, used or produced as described in one of the examples below.
  • corresponding or identical components of the sensor elements are provided with the same reference symbols.
  • FIG. 1 shows various options for designing the shape of a sensor element according to the invention.
  • FIG. 2 shows acceleration sensors according to the invention. sors.
  • FIG. 3 shows a pressure sensor according to the invention.
  • figure "4 shows a layer structure of a semiconductor sample from which an inventive sensor element can be manufactured.
  • FIG. 5 shows an etching mechanism with which a sensor element according to the invention can be produced.
  • FIG. 6 schematically shows a side view of a sensor element according to the invention with a self-supporting bar made of AlGaN / GaN on a silicon substrate.
  • FIG. 7 shows a section through an acceleration sensor with a heterostructure.
  • FIG. 8 shows embodiments of bending beams according to the invention.
  • Figure la shows seven different embodiments of a sensor element according to the invention.
  • an embodiment is shown in a view of the substrate base layer 1.
  • Each of the embodiments has a silicon substrate 1 and a homogeneous semiconductor layer 2 arranged thereon or a part of an overall layer that previously completely covered the substrate 1 after etching out a desired geometric structure.
  • a part 2a of the (remaining) homogeneous semiconductor layer 2 is designed to be self-supporting, that is to say it is arranged above a cavity 6 etched into the substrate 1 in such a way that the self-supporting part 2a is affected by the action of those to be determined physical size is deflectable.
  • the self-supporting part 2a or the homogeneous semiconductor layer 2 is connected to the substrate 1 via a different number of anchor points 3. Deflection of the cantilever part 2a changes the polarization in the material (bulk material of the homogeneous semiconductor layer 2) and thus a changed charge carrier density in the material or, if additional layers are applied to the homogeneous semiconductor layer 2, a heterostructure is present on the material surface or at the interface with another material, which is tapped off in the form of a current change, preferably by means of contacts 5, which are applied to the silicon substrate 1 at the edge of the cavity 6, are arranged on the homogeneous semiconductor layer 2 or their anchor points 3 and are directly adjacent to the semiconductor layer 2 , In FIG.
  • the self-supporting, deflectable part 2a of the homogeneous semiconductor layer 2 is connected to the substrate base 1 via three anchor points 3 in such a way that the deflectable part 2a is an essentially Y-shaped bar.
  • the three anchor points 3 and three associated contacts 5a -5c are arranged at the three ends of the y or the corresponding bar.
  • the y-bar shape has the advantage that a large change in the charge carrier density can be expected with a small mechanical deflection.
  • the self-supporting, deflectable part 2a of the homogeneous semiconductor layer 2 is connected to the substrate base -1 via two anchor points 3 of the homogeneous semiconductor layer 2 lying on the same side of the etched cavity 6 in such a way that the self-supporting, deflectable part 2a essentially has a U- shaped bar.
  • the two anchor points and the associated contacts 5a to 5b are at the two ends of the U or the corresponding bar, that is to say on the same side of the cavity 6 or on an edge side of the cavity 6.
  • Figure IC and Figure 1E show a self-supporting, deflectable part 2a, which is connected to the substrate base via four anchor points 3, that the 'deflectable part 2a essentially represents an X- or H-shaped bar.
  • the four anchor points are in d s' ends of the four Xr.l. of the H-beam arranged 1 -. net.
  • X-shaped or H-shaped structures offer the advantage of being able to choose different measurement paths or to be able to select the contacts 5 of the four contacts 5a to 5d used for the signal tapping.
  • FIG. 1D shows a case in which the self-supporting, deflectable part 2a of the homogeneous semiconductor layer 2 is connected to the substrate base 1 via a multiplicity of anchor points 3 such that the self-supporting, deflectable part 2a essentially represents a double-comb-shaped bar.
  • the anchor points 3 or contacts 5a, 5b are each arranged at the ends of the comb teeth or the individual beam ends.
  • the comb shape has the advantage of improved sensitivity compared to normal straight bars.
  • FIG. 1F shows a case in which a self-supporting, deflectable part 2a of the homogeneous semiconductor layer 2 is connected to the substrate base 1 via exactly one anchor point 3 in such a way that a self-supporting, deflectable rectilinear bar is formed.
  • the anchor point 3 is arranged at one of the ends of the beam, a first contact 5 at the anchor point 3.
  • the counter contact (not shown) is integrated into part 2a at the free end of the beam.
  • Figure IG shows a case in which a self-supporting, deflectable part 2a with the substrate base 1 over exactly two Anchor points 3 are connected in such a way that a cantilevered straight beam clamped on both sides is created.
  • the two anchor points 3 are located at the two ends of the straight bar, as are the associated contacts 5a, 5b.
  • the structures with at least two directly opposite anchor points 3, ie, seen from above, with anchor points 3 on two opposite sides of the etched cavity 6 have the advantage that, by deflecting the center, a tensioning over the entire surface, ie additionally alongside, via the corresponding beams expansion and compression in the bending radii, an extension of the beam and thus also an expansion of the unit cells can be achieved.
  • FIGS. 1b and 1c show two further sensor structures according to the invention, which are constructed analogously to the sensor structure shown in FIG. 1F, ie are only arranged on one side on the substrate 1 (left side of the illustrations), while the free-standing side 2a of the semiconductor layer 2 ( right side of the pictures) without connection to a carrier.
  • the two structures shown have a GaN buffer layer 2, which is partially arranged on the substrate 1 and which is partially (region 2a) self-supporting above the etched cavity 6.
  • a cover layer made of AlGaN 9 in the form of a mesa is arranged on the GaN buffer layer 2a in such a way that the mesa is arranged partly above the substrate 1 and partly above the etched cavity 6.
  • Ohmic contacts are attached to the edge of the transition from the non-free-standing area (above the substrate 1) to the free-standing semiconductor area (above the etched-out cavity 6).
  • FIG. 1b shows a configuration in which the two contacts 5a and 5b are mounted on the mesa 9 transversely to the beam extension (direction from substrate 1 to cavity 6 or from left to right in the figure), the contact 5b before the transition , the
  • the ohmic contact 5a attached behind the transition on the free-standing region 2a is electrically conducted to the region before the transition by means of a line 11 along the mesa 9.
  • the second contact 5b is also provided with such a line 11.
  • the two ohmic contacts 5a and 5b are mounted lengthwise to the beam extension, one at the top of the mesa 9, one at the bottom of the mesa 9. In this case, the contacts 5a and 5b cross the area of the Transition of the semiconductor material 2 from the non-free-standing area above the substrate 1 to the free-standing area 2a.
  • a control contact 10 can be arranged analogously to a gate of a transistor (preferably in the form of a Schottky contact) at a defined distance from one of the ohmic contacts 5a and 5b. The distance is preferably 0.3 ⁇ m to 0.5 ⁇ m.
  • the gate 10 is also provided with an electrical lead 11. Further control contacts or gates can also be arranged or used.
  • FIG. 2a shows an acceleration sensor according to the invention. This acceleration sensor is also shown in supervision.
  • the basic structure of the acceleration sensor corresponds to the structure of the sensors shown in FIG. 1 (identical elements or components are provided with identical reference numerals).
  • the acceleration sensor has two quarter-circle designed free ing bars 2a made of GaN, which are each attached to two anchor points 3 on the substrate edge of the Si substrate 1. Each bar 2a has two anchor points 3 on adjacent edges of the square, etched free square in the section shown
  • the anchor points 3 or the bars 2a are connected to one another via non-self-supporting sections 2b made of GaN of the homogeneous semiconductor layer 2 which are arranged in the vicinity of the substrate edge 1a or the edges of the cavity 6.
  • Sections 2b connect the two anchor points 3 of each beam 2a.
  • the contacts 5 are arranged on the sections 2b.
  • a square seismic mass 4 as shown in the section, is attached to the cantilevered sections 2a as the heart of the acceleration sensor. This is located completely above the etched cavity 6 and is only connected to the substrate base via the two curved beams 2a or the associated four anchor points 3.
  • the meaning of the structures 8 is explained in the description of FIG. 2b (which shows a section of the acceleration sensor from FIG. 2a).
  • the seismic mass 4 If the sensor is subjected to an acceleration, the seismic mass 4 is deflected from its rest position. By deflecting the seismic mass 4, the beam sections 2a become tense, which causes a change in the resistance of the measuring strip 2a at the substrate edge. The change in the resistance of the measuring strip is measured with the help of contacts 5 via a Wheatstone circuit.
  • the sensor structure or the circuit can also be provided with gates (preferably as Schottky contacts, for example in the form of a metallization with a Ni layer and an Au layer in a thickness of, for example, up to 200 nm, preferably in a thickness of up to 20 nm, carried out), provided for the operating point Position or used for compensation.
  • Figure 2b shows a section of the acceleration sensor shown in Figure 2a.
  • the sections 2a and 2b of the homogeneous semiconductor layer 2 are provided with a metallization layer everywhere except in the areas 8a, 8b and 9.
  • the area 9 is here arranged directly at the anchor point 3 shown and is partly self-supporting (lower section of the area 9) and partly (upper section or at anchor point 3) not self-supporting.
  • Sections 8a, 8b and 9 represent elevation areas or mesa areas of the homogeneous semiconductor layer 2, ie areas in which the thickness of the homogeneous semiconductor layer 2 is increased compared to the remaining areas of 2a and 2b.
  • the heterostructure is only present in regions 9, 8a and 8b, in the remaining regions 2a and 2b only the buffer layer provided with the metallization is then made GaN present.
  • the mesa sections 8a, 8b and 9 are also referred to below alternatively as resistors.
  • the electrical signals used arise per half-bow 2a in the area of the anchor points 3 in the mesa area 9 or in the corresponding transition area from free-standing to fixed, since only in area 9 there is a mesa and since only here is the metallization interrupted.
  • the structure and mode of operation therefore correspond to ⁇ a Whea.tstone bridge with unknown resistances .
  • the anchor points 3 (a total of four resistors 9 in the configuration shown, compare FIG. 2a) and resistors 8a, 8b, which are also unknown, but are identical to the resistors 9 and thus have an identical resistance value.
  • the resistors 8a, 8b (a total of four, see Fig. 2a) are thus four identical free-standing resistors made of GaN bars with metallization in parallel, which are not deflected.
  • the seismic mass 4 is deflected, the four resistors 9 change at points 3, but the four resistors 8 do not, so that the measurement signal (or the current) results as a difference.
  • the resistors 8 and / or 9 can also be implemented with a gate (for example as a Schottky contact) 1 .
  • FIGS. 2c and 2d Another acceleration sensor is shown in FIGS. 2c and 2d.
  • the basic structure of the Accuracy sensor shown initially corresponds to that acceleration sensor of Figure 2a and 2b. The difference is that in addition to the four resistors (here: 9R1, 9R3, 9R5 and 9R7) at anchor points 3, the resistors at the transition from seismic mass 4 to free-standing beam 2a - (transition area 7) are also used to help with this a signal generated by a deflection of the mass 4 (the resistances in the transition region 7 are provided with the reference numerals 9R2, 9R4, 9R6 and 9R8 in the figure).
  • the transition area 7 is upon deflection d.er Mas-se 4- in "exactly the other direction, curved like the transition region at the anchor points 3 so that the opposite effect is to be expected here. In the circuit this is exploited by the fact that the Resistors in the Wheatstone bridge are arranged electrically so that the effect adds up: For example, if 9R1 is deflected downwards (into the paper plane), 9R2 is deflected upwards.
  • the reference numerals 5a and 5b designate the contacts to which the input voltage (U ⁇ n ) necessary for the measurement is applied, the reference numerals 5c and 5d the contacts from which the voltage or current is tapped during the measurement becomes.
  • the bridges In the circuit presented, the bridges must be calibrated to 0 before commissioning. For this purpose, for example, the current at measuring points 5c and 5d is measured when a voltage is supplied to contacts 5b and 5a. This gives the value without
  • the resistors 9 can also be designed with a gate (not shown here). Interference can be calibrated out using reference resistors that are not deflected (analogous to resistors 8 in FIG. 2b). If the resistors 9 are made electrically accessible individually or are, as it were, dissolved electrically by means of a suitable circuit, i.e.
  • Resistors 9 also change their value depending on their location.
  • FIGS. 2e and 2f show a further acceleration sensor in the form of a free-standing bar.
  • the free-standing bar 2a of a homogeneous semiconductor layer 2 made of GaN has a rectangular mesa 9 or a corresponding elevation 9
  • an AlGaN cover layer is present on the buffer layer made of GaN in area 9 of the mesa is executed in the case shown as a four-point structure according to van der Pauw, ie the mesa 9 is connected at its four corners to the contacts 5a to 5d via electrical lines 11.
  • the signal is determined using the Hall effect.
  • the circuit can also be designed as a Hallbar structure.
  • the contacts 5a to 5d are ohmic contacts, the leads 11 run on the GaN buffer.
  • Embodiment of the van der Pauw structure for use in a Hall effect measurement method.
  • a scanning electron microscope 'looks up a homogeneous semiconductor structure membrane are shown 2 and four open- ings 12a to 12d for etching from above and four electrical leads 13 and four ohmic contacts 14 (the supply lines 13 run from the contacts 14 in the inward direction, ie to the area of the openings 12, pointed).
  • a free-standing membrane section is formed in the area of the center of the image (area 2c) 2c, " which can be deflected, for example, by a mechanical force or by a flow pressure.
  • FIG. 3a shows a pressure sensor according to the invention, which essentially has the same components as the sensors already described in FIGS. 1 and 2.
  • the self-supporting, deflectable part 2a of the homogeneous semiconductor layer 2 made of GaN is shaped as a circular membrane 2c.
  • the membrane 2c has two mes .. or elevations 9a and 9b, in which an AlGaN layer is arranged on the GaN layer.
  • the AlGaN / GaN heterostructure thus only exists in the mesa or resistance range 9. If there is a difference in the pressure on both sides of the membrane 2c, this bulges out.
  • the underlying, etched cavity 6 is also circular.
  • the membrane 2c (self-supporting sections 2a and non-self-supporting sections 2b on the substrate edge la) is braced on the substrate edge, as a result of which its polarization changes: in the heterostructure channel or in the mesa region 9a and 9b, the boundary layer between the AlGaN and the GaN layer a charge carrier density or accumulation, which is derived with the help of the contacts 5 as an output ' signal.
  • the contacts 5 are arranged directly on the heterostructure channel of the AlGaN / GaN layer sequence.
  • the output signal or its change is measured via the resistance bars or the mesa ranges 9a and 9b.
  • the measurement of the pressure difference between the top and bottom of the membrane 2c thus takes place via the curvature of the same.
  • a temperature independence of the sensor is verified by an interconnection
  • Membranes are geometrically determined, since the tension on the entire substrate edge la is the same and the membrane 2c thus receives its greatest stability.
  • the optional gate used here preferably in the form of a Schottky contact (bottom left, 10 in the figure) is used for setting the operating point.
  • the mode of operation of the circuit of the pressure sensor shown in FIG. 3a is identical to the mode of operation of the circuit for the acceleration sensors described in FIGS. 2a to 2d: four resistors 9a to 9d are used, two of which are resistors 9a and 9b on a pressure cell or Membrane 2c and two resistors 9c and 9d on the semicircular membranes 2d.
  • the membrane 2c can be deflected at an overpressure or underpressure above the membrane 2c in comparison with the gas volume enclosed under the pressure cell or membrane 2c. Due to the areas with removed GaN buffer (6a and 6b) there is no closed gas volume on the membranes 2d, the membranes 2d are therefore not deflectable and the resistors 9c and 9d serve as Reference resistors. In the event of a pressure change, the two resistors 9a and 9b on the socket 2c are therefore changed, but the two reference resistors 9c and 9d are not.
  • the Wheatstone connection of the four resistors 9a to 9d can again cause a current change (and this, in turn, is independent of disturbances, such as temperature, since these disturbances have the same effect on all four resistors and the two reference resistors 9c and 9d are not deflected) be measured, again without really having to know the value of the resistors 9.
  • the effective resistors 9a to 9d are again located at the transition area 3 of the non-free-standing semiconductor 2b to the free-standing 2a and, as already described, are designed in the form of a mesa, ie the membranes 2c and 2d themselves are also only GaN buffers here ,
  • the width b of the resistors 9a and 9b is significantly larger in order to obtain a higher effect (higher
  • FIG. 3b shows a scanning electron micrograph of the etched cavities 2dl and 2cl, which are used for the can 2c and the reference membranes 2d.
  • Figure 4 shows schematically a layer structure of a sample used to produce an active, self-supporting, homogeneous semiconductor layer in the form of a bar.
  • An approximately 300 ⁇ m thick silicon substrate 1 forms the basis of the sample.
  • An approximately 1.7 ⁇ m thick homogeneous semiconductor layer made of GaN 2f is applied to this silicon substrate.
  • a cover layer 2e (thickness approximately 20 nm) made of AlO is applied again to this layer 2f. 2 Ga0.sN.
  • a heterostructure sensor element can therefore be produced from the sample shown.
  • FIG. 5 shows an essential step, the under-etching of the bar structure, schematically in the production of a heterostructure sensor element according to the invention.
  • the other steps of the semiconductor structuring method for producing a sensor element according to the invention are first explained.
  • a mesa of a desired base area is etched out of the composite of homogeneous semiconductor layer 2f and cover layer 2e (GaN or Alo.2Gao.8N), in which the heterostructure 2e, 2f is etched away to the substrate base 1 outside the base area.
  • the remaining mesa is shown at the top right in FIG. 5 (section 2e, 2f).
  • the areas ⁇ to be etched (mesa area 2e, 2f on the right in the picture and substrate area on the left in the picture) are covered by an aluminum mask 7.
  • the covered areas are then etched using a reactive ion etching process with the support of halogens in the reaction gas:
  • the dry etching process used in the example uses a CF 4 plasma which is enriched with oxygen. The etching takes place thereby by a mechanical portion (CF 4/0 2) which is brought about by appropriate acceleration of the ions, as well as a chemical ⁇ tzanteil (F ⁇ - ions).
  • FIG. 6 shows the basic structure of a cantilevered bar (ie a spacing area d not filled with a non-metallic and non-semiconducting material) or a cantilevered homogeneous semiconductor layer 2f made of GaN on a silicon substrate 1, which or which with the aid of FIG described etching process was produced.
  • the cantilever bar 2f rests on the silicon substrate 1 at the left or right end.
  • FIG. 7 shows an acceleration sensor according to the invention in section.
  • the cutting plane is perpendicular to the substrate surface.
  • a homogeneous GaN semiconductor layer 2f is arranged on this silicon substrate 1. This is under-etched in the middle or in the center, so that the substrate 1 was at least partially removed in a cuboid area (cavity 6) below the layer 2f: In the edge area of the cuboid area, the substrate 1 was completely removed (so that the underside of the Layer 2f exposed), in the inner area of the cuboid area the substrate was not completely removed, so that one with the Layer 2f of connected substrate residue remains, which forms a seismic mass 4.
  • the homogeneous GaN semiconductor layer 2f thus forms a self-supporting holding beam or a membrane which rests on the substrate 1 in at least two areas (shown on the left and right) and on which or which centrally in the middle the seismic mass 4 is attached freely suspended.
  • the seismic mass 4 can thus be deflected upwards or downwards by the action of acceleration (arrows in the figure) ' .
  • the homogeneous semiconductor layer 2f On its surface facing away from the substrate surface, has two elevations or two mesa ranges.
  • Each of the mesa ranges extends in a direction parallel to the substrate surface (in the picture: from left to right) or parallel to the surface of the homogeneous semiconductor layer 2f from the area where the layer 2f is supported by the substrate 1, over the area where the bottom of the layer 2f has been freed from the substrate, down to the area where the seismic mass 4 is arranged below the layer 2f.
  • layer 2f here has a thickness of 1.93 ⁇ m (in general, the additional thickness of layer 2f in the mesa range is preferably between 170 nm and 290 nm.
  • a cover layer 2e made of AlGaN ' is applied to the mesas of layer 2f so that a heterostructure is formed in the mesa region.
  • the shown accelerator Inclination sensor thus has a heterostructure according to the invention.
  • the heterostructure channel 2g lies at the boundary layer between the GaN layer 2f and the AlGaN cover layer 2e (ie in the mesa range). In each mesa, two contact areas are arranged directly adjacent to the heterostructure channel 2g.
  • Each of the four contact areas shown consists of a contact area to the heterostructure channel 2g formed by alloying
  • a contact is arranged in a fixed region of the heterostructure or layers 2e and 2f (ie in a region where the heterostructure or layer 2f from Silicon substrate 1 is supported) and that the other contact of each resistance or mesa area is in the floating membrane area or retaining bar area.
  • the transition from fixed to free is approximately in the middle below the mesa range.
  • the present arrangement Compared to an arrangement in which, for example, two contacts are arranged in the fixed area (ie above the silicon substrate 1) and are connected by a closed heterostructure length piece, which partly runs on a membrane (which means that the curvatures that occur are partly opposing)
  • the present arrangement has the advantage that an extremely small resulting signal component caused by the opposing curvatures is not to be expected, but rather a significantly higher signal component. In the case shown, therefore, not all lengths or elements of an electrically closed path or all curvatures in the material contribute to the signal when the membrane or the beam is deflected.
  • the heterostructure is retained only in the area of the mesa (the usable active area of the semiconductor then lies there) and that the heterostructure is etched away outside the mesa or the corresponding area and only a homogeneous layer 2f remains as a residual membrane or retaining bar.
  • the position of the contacts 5 is advantageously located on the outer edges of the mesa series.
  • the scanning electron micrograph shown in FIG. 7 shows a bottom view of the silicon substrate 1, from which the cuboid area has already been etched out and thus the seismic mass 4 can be seen.
  • the sensor 7 and all the other sensors shown can also be designed in forms without a heterostructure (ie only with the homogeneous semiconductor layer 2f).
  • the sensor functionality is then ensured by geometrically defining the mesa range. This is done by suitable etching.
  • the mesa can be adapted 'etch depths (depending on the material.) Obtained ,, - parasitic effects to ⁇ from the adjacent, remaining membrane material (buffer or non-mesa) to be prevented.
  • the signal or effect strength changes - depending on the material type, it can be assumed that the effect is greatest with bulk material.
  • FIG. 8 shows sensor elements according to the invention in the form of self-supporting beams which are fastened on one side or with an anchor point. These were created using sacrificial membranes attached to the beam end opposite the anchor point.
  • FIG. 8a shows three such beams according to the invention with a self-supporting beam end 2a, which is initially connected to a sacrificial membrane 2k via a predetermined breaking point 21. Also shown are four electrical contacts 5a to 5d which are connected via electrical feed lines 11 to a mesa 9 which, as already described, is arranged partly above the free-standing region and partly above the fixed region of the semiconductor structure layer 2.
  • the semiconductor structure shown is produced as follows: The mesa 9 (consisting of a portion of the GaN layer 2f and a portion the AlGaN cover layer 2e) is produced by a first etching. The heterostructure is therefore only fully preserved in area 9 (active, flowed area). The depth during the first etching is in the range from 200 nm to 500 nm. In a second etching step, the area 2f-T is then etched outside the mesa 9, which area defines the beam structure or the self-supporting beam structure 2a itself (this is the case here GaN completely etched away from the top down to the substrate 1). This kind of patterning the GaN layers is preferred when, 6 takes place from the top of the cavity ⁇ tzung_ '.
  • the etching of the cavity 6 is carried out from the rear (identified by the reference symbol RA in the image), as is the case when using the ICP standard method for silicon substrates, then an etching from above in the form of deep etching (approximately in the case of bars or to define the bar structure, which is sometimes also referred to as a “deep mesa”), in order to define this geometry, but the etching described can also be used in two steps.
  • the circuit is implemented with gates 10
  • the sensor elements shown were produced by dry chemical etching with the reaction gas CF 4 with the addition of oxygen from the top of a [111] silicon substrate.
  • the [111] surface of the silicon substrate is used because of the hexagonal lattice structure of the group III nitrides - tongue basically goes from the back and from the
  • FIG. 8b shows a scanning electron microscope image in which two bars 2a, which are still connected to the sacrificial membrane 2k via the predetermined breaking point 21, can be seen.
  • Figure 8c shows three narrow bars (free-standing) 2al, 2a2 and 2a3, which were produced as described.
  • the uppermost bar 2a has a length of 100 ⁇ m with a width of 1 ⁇ m.

Abstract

La présente invention concerne un élément de détection qui présente une structure de semi-conducteur à base de nitrure du groupe III. L'élément de détection à semi-conducteur sert à déterminer la pression, la température, une force, une direction ou une accélération. Il présente un substrat de base (1) sur lequel est appliquée une couche de semi-conducteur homogène à base de nitrure du groupe III. Selon l'invention, la surface de la couche de semi-conducteur homogène (2, 2f), qui est dirigée vers le substrat de base (1) présente au moins par zones un espacement par rapport à la surface du substrat de base, dirigée vers la couche de semi-conducteur homogène (2, 2f). L'invention se caractérise par la présence d'au moins deux contacts électriques de dérivation (5) qui servent à dériver un signal électrique de sortie qui peut être produit par la couche de semi-conducteur homogène (2, 2f), lesdits contacts électriques de dérivation se trouvant sur, contre et/ou sous la couche de semi-conducteur homogène (2, 2f) ou pouvant être intégrés à celle-ci.
EP04721498A 2003-03-18 2004-03-18 Element de detection a structures de barres en porte-a-faux comprenant des semi-conducteurs a base d'un nitrure du groupe iii Withdrawn EP1606600A2 (fr)

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DE10311757 2003-03-18
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WO2007077168A1 (fr) 2005-12-31 2007-07-12 Endress+Hauser Gmbh+Co.Kg Cellule de mesure de pression
WO2007131796A2 (fr) * 2006-05-17 2007-11-22 Microgan Gmbh Actionneurs micromécaniques en semi-conducteurs à base de nitrures du groupe iii
KR20090086238A (ko) * 2006-11-10 2009-08-11 에이전시 포 사이언스, 테크놀로지 앤드 리서치 마이크로기계 구조 및 마이크로기계 구조 제조방법
DE102008009215A1 (de) * 2008-02-13 2009-08-20 Universität Kassel Bauelement zur Darstellung von Symbolen und damit hergestellte optische Anzeigevorrichtung
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WO2010096331A1 (fr) 2009-02-11 2010-08-26 Duke University Capteurs incorporant des anticorps et leurs procédés de fabrication et d'utilisation
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FR2971243B1 (fr) 2011-02-09 2013-03-08 Centre Nat Rech Scient Dispositif microelectromecanique avec structure d'actionnement piezoelectrique
US10407716B2 (en) 2014-03-13 2019-09-10 Duke University Electronic platform for sensing and control of electrochemical reactions
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FR3047841B1 (fr) 2016-02-17 2018-05-25 Centre National De La Recherche Scientifique Transducteur electromecanique a base de nitrure de gallium dope.
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US7504658B2 (en) 2009-03-17
US20070176211A1 (en) 2007-08-02

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