FR3047841B1 - Transducteur electromecanique a base de nitrure de gallium dope. - Google Patents

Transducteur electromecanique a base de nitrure de gallium dope. Download PDF

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Publication number
FR3047841B1
FR3047841B1 FR1651291A FR1651291A FR3047841B1 FR 3047841 B1 FR3047841 B1 FR 3047841B1 FR 1651291 A FR1651291 A FR 1651291A FR 1651291 A FR1651291 A FR 1651291A FR 3047841 B1 FR3047841 B1 FR 3047841B1
Authority
FR
France
Prior art keywords
gallium nitride
electromechanical transducer
transducer based
nitride dope
dope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1651291A
Other languages
English (en)
Other versions
FR3047841A1 (fr
Inventor
Marc Faucher
Yvon Cordier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite de Lille 1 Sciences et Technologies
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite de Lille 1 Sciences et Technologies
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite de Lille 1 Sciences et Technologies filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1651291A priority Critical patent/FR3047841B1/fr
Priority to PCT/EP2017/053263 priority patent/WO2017140664A1/fr
Priority to EP17705116.6A priority patent/EP3417483A1/fr
Publication of FR3047841A1 publication Critical patent/FR3047841A1/fr
Application granted granted Critical
Publication of FR3047841B1 publication Critical patent/FR3047841B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
FR1651291A 2016-02-17 2016-02-17 Transducteur electromecanique a base de nitrure de gallium dope. Active FR3047841B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1651291A FR3047841B1 (fr) 2016-02-17 2016-02-17 Transducteur electromecanique a base de nitrure de gallium dope.
PCT/EP2017/053263 WO2017140664A1 (fr) 2016-02-17 2017-02-14 Transducteur electromecanique a base de nitrure de gallium dope
EP17705116.6A EP3417483A1 (fr) 2016-02-17 2017-02-14 Transducteur electromecanique a base de nitrure de gallium dope

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1651291 2016-02-17
FR1651291A FR3047841B1 (fr) 2016-02-17 2016-02-17 Transducteur electromecanique a base de nitrure de gallium dope.

Publications (2)

Publication Number Publication Date
FR3047841A1 FR3047841A1 (fr) 2017-08-18
FR3047841B1 true FR3047841B1 (fr) 2018-05-25

Family

ID=55542996

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1651291A Active FR3047841B1 (fr) 2016-02-17 2016-02-17 Transducteur electromecanique a base de nitrure de gallium dope.

Country Status (3)

Country Link
EP (1) EP3417483A1 (fr)
FR (1) FR3047841B1 (fr)
WO (1) WO2017140664A1 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100388011B1 (ko) * 2000-01-17 2003-06-18 삼성전기주식회사 ＧａＮ박막 ＳＡＷ필터 및 이를 제조하는 방법
US6647796B2 (en) * 2000-08-11 2003-11-18 California Institue Of Technology Semiconductor nitride pressure microsensor and method of making and using the same
US7504658B2 (en) 2003-03-18 2009-03-17 Mike Kunze Sensor elements with cantilevered bar structures made of semiconductors based on group III-nitride
EP2018673B1 (fr) * 2006-05-17 2014-01-08 MicroGaN GmbH Actionneurs micromécaniques en semi-conducteurs à base de nitrures du groupe iii
JP2011077386A (ja) * 2009-09-30 2011-04-14 Sumitomo Electric Ind Ltd 高電子移動度トランジスタ、エピタキシャル基板、及び高電子移動度トランジスタを作製する方法
FR2971243B1 (fr) 2011-02-09 2013-03-08 Centre Nat Rech Scient Dispositif microelectromecanique avec structure d'actionnement piezoelectrique
US9147740B2 (en) * 2012-07-03 2015-09-29 Infineon Technologies Austria Ag Stress-controlled HEMT
JP2015177067A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置
WO2016209264A1 (fr) * 2015-06-26 2016-12-29 Intel Corporation Structures mems au nitrure du groupe iii sur un substrat du groupe iv

Also Published As

Publication number Publication date
FR3047841A1 (fr) 2017-08-18
EP3417483A1 (fr) 2018-12-26
WO2017140664A1 (fr) 2017-08-24

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