EP1590829A2 - Method for producing a chip panel by means of a heating and pressing process using a thermoplastic material - Google Patents

Method for producing a chip panel by means of a heating and pressing process using a thermoplastic material

Info

Publication number
EP1590829A2
EP1590829A2 EP04707481A EP04707481A EP1590829A2 EP 1590829 A2 EP1590829 A2 EP 1590829A2 EP 04707481 A EP04707481 A EP 04707481A EP 04707481 A EP04707481 A EP 04707481A EP 1590829 A2 EP1590829 A2 EP 1590829A2
Authority
EP
European Patent Office
Prior art keywords
chip carrier
carrier plate
plate
semiconductor chips
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04707481A
Other languages
German (de)
French (fr)
Inventor
Michael Bauer
Edward FÜRGUT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1590829A2 publication Critical patent/EP1590829A2/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • a chip benefit or composite wafer is a plastic plate connected to semiconductor chips, as is known from the publication US Pat. No. 6,072,234 under the name "Neo-Wafer”.
  • the plastic plate has a dispensed or pressure-pressed plastic mass.
  • a chip benefit additionally has an overwiring substrate equipped with semiconductor chips.
  • the top of the rewiring substrate, which carries the semiconductor chips, is covered by a plastic compound while the semiconductor chips are embedded.
  • the back of the rewiring substrate has external contact surfaces, which can be equipped with external contacts.
  • Such chip benefits thus have several electronic components and can finally be separated into individual electronic components.
  • a disadvantage of these chip benefits is their cost-intensive, complex structure, which can only be achieved by means of cost-intensive process steps and complex devices.
  • the object of the invention is to provide a method and a device which lead to cost savings in the production of chip benefits.
  • a method for producing a chip benefit is created which produces a chip benefit in a simple manner by means of a heat and pressure process using a thermoplastic material.
  • a chip carrier plate is first provided.
  • the top of this chip carrier plate is equipped with semiconductor chips. These semiconductor chips are arranged in rows and columns while maintaining a distance a between the columns and a distance b between the rows on the chip carrier plate.
  • a transfer plate is also provided.
  • One of the two plates is deformably softened during a heating step, while the other remains dimensionally stable. Then the transfer plate and the chip carrier plate are pressed together. The semiconductor chips are pressed into the deformable transfer plate or the deformable chip plate until an upper side of the deformable transfer or chip carrier plate and the upper sides of the semiconductor chips form a common and essentially leveled upper side. After the semiconductor chips have been pressed into the deformable plate, the dimensionally stable plate is removed.
  • the method has the advantage that a benefit can be produced inexpensively with simple means, in which the top sides of the semiconductor chips are free of plastic and form a common top side with the deformable plastic of the chip carrier plate or the transfer plate. On this common, leveled upper side, wiring structures with external contact surfaces can then be applied with a precision and magnitude that were previously only possible on semiconductor wafers.
  • the production with half terchips of equipped rewiring substrates are completely saved, since the chip benefit according to the invention with the embedded semiconductor chips and exposed top sides of the semiconductor chips is available as a substrate for a rewiring structure and for attaching external contacts.
  • one of the two plates which are used as a chip carrier plate or as a transfer plate, is heated above its glass transition temperature in the heating step, while the dimensionally stable plate is kept at a temperature below the glass transition temperature.
  • the glass transition temperatures of the chip carrier plate and transfer plate differ by about a factor of ten, both can be made from a thermoplastic.
  • the dimensionally stable plate can be made from a thermoset which has already hardened and remains dimensionally stable up to its decomposition temperature, while the plate into which the semiconductor chips are to be pressed during heating consists of a thermoplastic material with a relatively low glass transition temperature below the decomposition temperature of the thermoset.
  • a dimensionally stable transfer plate can be a completely flat plate, so that when the transfer plate and the chip carrier plate are pressed together, a completely flat, common top side is formed from the semiconductor chip top side and the plastic top side of the chip carrier plate.
  • the tops of the semiconductor chips have integrated circuits with their freely accessible contact areas.
  • the method thus has the advantage that the contact areas are no longer exposed when a rewiring structure is applied to the chip benefit must be, since the top of the semiconductor chips remains free of the plastic mass of the chip carrier plate and no additional plastic layer on the top of the semiconductor chips are to be applied before rewiring. This saves further previously customary method steps, namely applying a common insulation layer and a method step for opening contact windows of the semiconductor chip in this common insulation layer before applying a rewiring structure.
  • a device in particular for carrying out the method according to the invention has a transfer plate made of a dimensionally stable material during the heating step, which is provided with stamp surfaces.
  • the arrangement and size of the stamp surfaces are adapted to the semiconductor chips on a deformable chip carrier plate. Before the dimensionally stable transfer plate and the chip carrier plate equipped with semiconductor chips are pressed together, the stamp surfaces are aligned with the semiconductor chips, so that the stamp surfaces when the chip carrier plate and
  • Transfer plate support the penetration of the semiconductor chips into the deformable chip carrier plate.
  • Such a device has the advantage that the upper side of the transfer plate does not touch the deformable material of the chip carrier plate and sticking to it is avoided.
  • the chip carrier plate preferably has a thermoplastic plastic.
  • the device for carrying out the method according to the invention can have a transfer plate made of deformable material, such as a thermoplastic film, and the chip carrier plate can have a dimensionally stable material.
  • the top of the semiconductor chips are on the dimensionally stable chip carrier plate arranged.
  • the transfer and chip carrier plates are heated and pressed together, the rear sides and the edge sides of the semiconductor chips are pressed into the deformable transfer plate. This creates a plane on the upper side of the chip carrier plate, which is formed from deformable material of the transfer plate and the upper sides of the semiconductor chips.
  • the transfer plate accommodates the semiconductor chips, while the dimensionally stable chip carrier plate is finally removed in order to ensure access to the contact areas on the top side of the semiconductor chips and to apply a rewiring structure to the common level of transfer plate material and top sides of the semiconductor chips.
  • the device has a surface press for both variants.
  • This surface press in turn has at least one heatable pressing surface with which the transfer plate and / or the chip carrier plate can be heated above the lower of the two glass transition temperatures.
  • the heated pressing surfaces with transfer plate or chip carrier plate are pressed together precisely until the tops of semiconductor chips and deformable material are leveled.
  • the individual chips are applied to a chip benefit at a defined distance on a thermoplastic carrier.
  • the individual chips are encased and embedded using heat and a defined force.
  • the size of the benefit is not limited by the material properties, 3) a positional accuracy of the semiconductor chips regardless of the material of the panel,
  • thermoplastics for the carrier plate and transfer plate, which enables increased thermal and mechanical stress in subsequent processes
  • radiation-crosslinked thermoplastics which, after appropriate treatment, for example with beta rays, have thermosetting properties
  • thermoplastics Due to the properties of the thermoplastics and due to the leveled common surface consisting of surfaces of the semiconductor chips and plastic surfaces, thin-film techniques such as sputtering, photolithography, galvanic reinforcement of metal layers as well as dry and wet etching can advantageously be used for further processing.
  • connecting lines can be produced by an order of magnitude using thick film techniques.
  • FIG. 1 shows a schematic cross section of a device for carrying out the method according to the invention
  • FIG. 2 shows a schematic cross section of an alternative device for carrying out the method according to the invention
  • FIG. 3 shows a schematic cross section of a chip benefit which is produced with the aid of one of the devices according to FIG. 1 or FIG. 2,
  • FIG. 4 shows a basic plan view of a chip use according to FIG. 3.
  • FIG. 1 shows a schematic cross section of an apparatus for performing the method.
  • This device has a dimensionally stable transfer plate 5 which is equipped with transfer stamps 9. Furthermore, the device has a deformable chip carrier plate 2, which has semiconductor chips 4 arranged in rows and columns on its upper side 3. While the deformable chip carrier plate 2 has a thermoplastic, the transfer plate is dimensionally stable and made from a thermoplastic. The glass transition temperature of the thermoplastic of the chip carrier plate 2 is below the decomposition temperature of the thermoset of the transfer plate 5.
  • the device can raise the chip carrier plate 2 and the transfer plate 5 to a process temperature above the glass transition temperature of the chip carrier plate 2 and below the decomposition temperature of the thermoset Heat up the transfer plate 5.
  • the plates 2 and 5 are aligned with one another in such a way that the transfer stamps 9 are aligned with their stamp surfaces 8 coincident with the semiconductor chips 4 on the chip carrier plate 2.
  • the size and arrangement of the stamp surfaces 8 are adapted to the upper sides 6 of the semiconductor chips 4.
  • a device (not shown) with press plates, between which the chip carrier plate 2 and transfer plate 5 are arranged, moves the two plates 2 and 5 towards one another.
  • the transfer stamps 9 press the semiconductor chips 4 into the softened
  • Thermoplastic mass of the chip carrier plate 2 is stopped when the upper sides 6 of the semiconductor chips 4 are leveled with the upper side 3 of the deformable chip carrier plate 2 and form a common upper side.
  • FIG. 2 shows a schematic cross section of an alternative device for performing the method according to the invention.
  • the chip carrier plate 2 has a plastic that is dimensionally stable at the process temperature.
  • Semiconductor chips 4 are arranged in rows and columns on the top 3 of the dimensionally stable chip carrier plate 2.
  • the device has a transfer plate 5, which consists of a thermoplastic whose glass transition temperature is below the process temperature. When heating up heatable pressing surfaces of a pressing device, not shown, the transfer plate 5 softens The semiconductor chips 4 on the dimensionally stable chip carrier plate 2 are pressed into the thermoplastic of the transfer plate 5 by pressing surfaces.
  • the dimensionally stable chip carrier plate 2 made of glass, ceramic or a film made of thermoset or a thermoplastic plate with a higher glass transition temperature than the process temperature can be removed after the semiconductor chips 4 have been embedded in the deformable transfer plate 5. Such removal is possible by blasting, etching, sputtering or by pulling off a film, for example, from the cooled upper side of the transfer plate 5 after embedding the rear sides and edge sides of the semiconductor chips 4 in the thermoplastic of the transfer plate 5.
  • the difference between the two devices lies on the one hand in the different materials of chip carrier plate 2 and transfer plate 5 and in the different arrangement of the semiconductor chips on the chip carrier plate 2.
  • the rear sides of the semiconductor chips are arranged on the deformable chip carrier plate 2.
  • the upper sides ⁇ of the semiconductor chips 4 are arranged on the upper side 3 of the dimensionally stable chip carrier plate.
  • FIG. 3 shows a schematic cross section of a chip 1, which is produced with the aid of one of the devices according to Figure 1 or Figure 2.
  • This chip benefit 1 is characterized by a common and leveled top side 7 consisting of top sides 6 of the semiconductor chips 4 and top sides of either a chip carrier plate or a transfer plate, as shown in FIGS. 1 and 2.
  • This common upper side 7 of the chip benefit 1 can be used without further intermediate steps, a rewiring structure is applied, which enables access to the exposed upper sides 6 of the semiconductor chips 4 and thus to the integrated semiconductor circuits 4.
  • the rewiring structure can be provided with external contact surfaces and these in turn with external contacts, so that such a chip benefit can be produced with relatively few manufacturing steps and can be separated into individual electronic components.
  • FIG. 4 shows a basic plan view of a chip benefit according to FIG. 3.
  • the top sides 6 of the semiconductor chips 4 are arranged in rows 10 and columns 11, with the distance a between columns 11 and the distance b between rows 10 with a thermoplastic plastic mass between the semiconductor chips 4 is filled.
  • the area available for arranging external contacts can be increased as desired compared to the pure chip surface size, which only depends on the distance a or the distance b between the semiconductor chips.

Abstract

The invention relates to a method for producing a chip panel or composite wafer by means of a heating or pressing process, in addition to a device for carrying out said method. A chip carrier plate (2) and a transfer plate (5) are provided in the device in order to carry out said method. Said method comprises in fitting the chip carrier plate (2) with semi-conductor chips (4) and in heating the plates (2, 5). One of the plates remains dimensionally stable while the semi-conductor chips are pressed into the other deformable plate.

Description

Beschreibungdescription
Verfahren zur Herstellung eines Chipnutzens mittels eines Hitze- und Druckprozesses unter Verwendung eines thermoplas- tischen Materials.Process for producing a chip insert by means of a heat and pressure process using a thermoplastic material.
Ein Chipnutzen oder auch Verbundwafer ist eine mit Halbleiterchips verbundene Kunststoffplatte, wie sie aus der Druckschrift US 6,072,234 unter der Bezeichnung "Neo-Wafer" be- kannt ist. Die Kunststoffplatte weist eine dispensierte oder druckgepresste Kunststoffmasse auf.A chip benefit or composite wafer is a plastic plate connected to semiconductor chips, as is known from the publication US Pat. No. 6,072,234 under the name "Neo-Wafer". The plastic plate has a dispensed or pressure-pressed plastic mass.
Häufig weist ein Chipnutzen zusätzlich ein mit Halbleiterchips bestücktes ümverdrahtungssubstrat auf. Die Oberseite des ümverdrahtungssubstrats, welche die Halbleiterchips trägt, ist unter Einbetten der Halbleiterchips von einer Kunststoffmasse bedeckt. Die Rückseite des Umverdrahtungs- substrats weist Außenkontaktflächen auf, welche mit Außenkontakten bestückt sein können. Derartige Chipnutzen weisen so- mit mehrere elektronische Bauteile auf und können abschließend in einzelne elektronische Bauteile getrennt werden. Ein Nachteil dieser Chipnutzen ist ihr kostenintensiver, komplexer Aufbau, der nur mittels kostenintensiver Verfahrensschritte und komplexer Vorrichtungen verwirklicht werden kann.Often, a chip benefit additionally has an overwiring substrate equipped with semiconductor chips. The top of the rewiring substrate, which carries the semiconductor chips, is covered by a plastic compound while the semiconductor chips are embedded. The back of the rewiring substrate has external contact surfaces, which can be equipped with external contacts. Such chip benefits thus have several electronic components and can finally be separated into individual electronic components. A disadvantage of these chip benefits is their cost-intensive, complex structure, which can only be achieved by means of cost-intensive process steps and complex devices.
Aufgabe der Erfindung ist es, ein Verfahren und eine Vorrichtung anzugeben, die zu Kosteneinsparungen bei der Herstellung von Chipnutzen führen.The object of the invention is to provide a method and a device which lead to cost savings in the production of chip benefits.
Diese Aufgabe wird mit dem Gegenstand der unabhängigen Ansprüche gelöst. Vorteilhafte Weiterbildungen der Erfindung ergeben sich aus den abhängigen Ansprüchen. Erfindungsgemäß wird ein Verfahren zur Herstellung eines Chipnutzens geschaffen, das mittels eines Hitze- und Druckprozesses unter Verwendung eines thermoplastischen Materials einen Chipnutzen auf einfache Weise herstellt. Dazu wird zunächst eine Chipträgerplatte bereitgestellt. Diese Chipträgerplatte wird auf ihrer Oberseite mit Halbleiterchips bestückt. Diese Halbleiterchips werden in Zeilen und Spalten unter Einhaltung eines Abstands a zwischen den Spalten und eines Abstandes b zwischen den Zeilen auf der Chipträgerplatte angeordnet. Weiterhin wird eine Transferplatte bereitgestellt.This object is achieved with the subject matter of the independent claims. Advantageous developments of the invention result from the dependent claims. According to the invention, a method for producing a chip benefit is created which produces a chip benefit in a simple manner by means of a heat and pressure process using a thermoplastic material. For this purpose, a chip carrier plate is first provided. The top of this chip carrier plate is equipped with semiconductor chips. These semiconductor chips are arranged in rows and columns while maintaining a distance a between the columns and a distance b between the rows on the chip carrier plate. A transfer plate is also provided.
Eine der beiden Platten wird bei einem Erwärmungsschritt ver- formbar erweicht, während die andere formstabil bleibt. Dann werden die Transferplatte und die Chipträgerplatte zusammen- gepresst. Dabei werden die Halbleiterchips in die verformbare Transferplatte oder die verformbare Chipplatte soweit einge- presst, bis eine Oberseite der verformbaren Transfer- bzw. Chipträgerplatte und die Oberseiten der Halbleiterchips eine gemeinsame und im wesentlichen nivellierte Oberseite bilden. Nach dem Einpressen der Halbleiterchips in die verformbare Platte wird die formstabile Platte entfernt.One of the two plates is deformably softened during a heating step, while the other remains dimensionally stable. Then the transfer plate and the chip carrier plate are pressed together. The semiconductor chips are pressed into the deformable transfer plate or the deformable chip plate until an upper side of the deformable transfer or chip carrier plate and the upper sides of the semiconductor chips form a common and essentially leveled upper side. After the semiconductor chips have been pressed into the deformable plate, the dimensionally stable plate is removed.
Das Verfahren hat den Vorteil, dass mit einfachen Mitteln preiswert ein Nutzen hergestellt werden kann, bei dem die 0- berseiten der Halbleiterchips frei von Kunststoff sind und eine gemeinsame Oberseite mit dem verformbaren Kunststoff der Chipträgerplatte oder der Transferplatte bilden. Auf dieser gemeinsamen, im nivellierten Oberseite können dann ümverdrah- tungsstrukturen mit Außenkontaktflachen in einer Präzision und Größenordnung aufgebracht werden, wie sie bisher nur auf Halbleiterwafern möglich sind. Die Herstellung mit Halblei- terchips bestückter ümverdrahtungssubstrate wird vollständig eingespart, da der erfindungsgemäße Chipnutzen mit den eingebetteten Halbleiterchips und freiliegenden Oberseiten der Halbleiterchips als Substrat für eine UmverdrahtungsStruktur und für ein Aufbringen von Außenkontakten zur Verfügung steht.The method has the advantage that a benefit can be produced inexpensively with simple means, in which the top sides of the semiconductor chips are free of plastic and form a common top side with the deformable plastic of the chip carrier plate or the transfer plate. On this common, leveled upper side, wiring structures with external contact surfaces can then be applied with a precision and magnitude that were previously only possible on semiconductor wafers. The production with half terchips of equipped rewiring substrates are completely saved, since the chip benefit according to the invention with the embedded semiconductor chips and exposed top sides of the semiconductor chips is available as a substrate for a rewiring structure and for attaching external contacts.
Bei dem erfindungsgemäßen Verfahren wird eine der beiden Platten, die als Chipträgerplatte oder als Transferplatte eingesetzt sind, beim Erwärmungsschritt über seine Glasübergangstemperatur erhitzt, während die formstabile Platte auf einer Temperatur unterhalb der Glasübergangstemperatur gehalten wird. Unterscheiden sich die Glasübergangstemperaturen von Chipträgerplatte und Transferplatte um etwa eine Zehner- potenz, so können beide aus einem thermoplastischen Kunststoff hergestellt sein. Alternativ kann die formstabile Platte aus einem Duroplast hergestellt sein, der bereits ausgehärtet ist und bis zu seiner Zersetzungstemperatur formstabil bleibt, während die Platte, in die die Halbleiterchip beim Erwärmen eingepresst werden sollen, aus einem thermoplastischen Kunststoff mit einer relativ niedrigen Glasübergangstemperatur besteht, die unterhalb der Zersetzungstemperatur des Duroplastes liegt.In the method according to the invention, one of the two plates, which are used as a chip carrier plate or as a transfer plate, is heated above its glass transition temperature in the heating step, while the dimensionally stable plate is kept at a temperature below the glass transition temperature. If the glass transition temperatures of the chip carrier plate and transfer plate differ by about a factor of ten, both can be made from a thermoplastic. Alternatively, the dimensionally stable plate can be made from a thermoset which has already hardened and remains dimensionally stable up to its decomposition temperature, while the plate into which the semiconductor chips are to be pressed during heating consists of a thermoplastic material with a relatively low glass transition temperature below the decomposition temperature of the thermoset.
Eine formstabile Transferplatte kann eine vollständig ebene Platte sein, so dass beim Zusammenpressen der Transferplatte und der Chipträgerplatte eine vollständig ebene, gemeinsame Oberseite aus Halbleiterchipoberseiten und Kunststoffoberseite der Chipträgerplatte entsteht. Dabei weisen die Oberseiten der Halbleiterchips integrierte Schaltungen mit ihren frei zugänglichen Kontaktflächen auf. Somit hat das Verfahren den Vorteil, dass die Kontaktflächen beim Aufbringen einer Um- verdrahtungsstruktur auf den Chipnutzen nicht mehr freigelegt werden müssen, da die Oberseite der Halbleiterchips frei von der Kunststoffmasse der Chipträgerplatte bleibt und auch keine zusätzliche Kunststoffschicht auf die Oberseiten der Halbleiterchips vor einer Umverdrahtung aufzubringen sind. Damit werden weitere, bisher übliche Verfahrensschritte eingespart, nämlich ein Aufbringen einer gemeinsamen Isolationsschicht und ein Verfahrensschritt zum Öffnen von Kontaktfenstern des Halbleiterchips in dieser gemeinsamen Isolationsschicht vor einem Aufbringen einer UmverdrahtungsStruktur .A dimensionally stable transfer plate can be a completely flat plate, so that when the transfer plate and the chip carrier plate are pressed together, a completely flat, common top side is formed from the semiconductor chip top side and the plastic top side of the chip carrier plate. The tops of the semiconductor chips have integrated circuits with their freely accessible contact areas. The method thus has the advantage that the contact areas are no longer exposed when a rewiring structure is applied to the chip benefit must be, since the top of the semiconductor chips remains free of the plastic mass of the chip carrier plate and no additional plastic layer on the top of the semiconductor chips are to be applied before rewiring. This saves further previously customary method steps, namely applying a common insulation layer and a method step for opening contact windows of the semiconductor chip in this common insulation layer before applying a rewiring structure.
Eine Vorrichtung insbesondere zur Durchführung des erfindungsgemäßen Verfahrens weist eine Transferplatte aus einem während des Erwärmungsschritts formstabilen Material auf, die mit Stempelflächen versehen ist. Dabei sind die Stempelflä- chen in Anordnung und Größe den Halbleiterchips auf einer verformbaren Chipträgerplatte angepasst. Vor einem Zusammenpressen der formstabilen Transferplatte und der mit Halbleiterchips bestückten Chipträgerplatte werden die Stempelflächen zu den Halbleiterchips ausgerichtet, so dass die Stem- pelflächen beim Zusammenpressen von Chipträgerplatte undA device in particular for carrying out the method according to the invention has a transfer plate made of a dimensionally stable material during the heating step, which is provided with stamp surfaces. The arrangement and size of the stamp surfaces are adapted to the semiconductor chips on a deformable chip carrier plate. Before the dimensionally stable transfer plate and the chip carrier plate equipped with semiconductor chips are pressed together, the stamp surfaces are aligned with the semiconductor chips, so that the stamp surfaces when the chip carrier plate and
Transferplatte das Eindringen der Halbleiterchips in die verformbare Chipträgerplatte unterstützen. Eine derartige Vorrichtung hat den Vorteil, dass die Oberseite der Transferplatte nicht das verformbare Material der Chipträgerplatte berührt und ein Verkleben mit derselben vermieden wird. Dabei weist die Chipträgerplatte vorzugsweise einen thermoplastischen Kunststoff auf.Transfer plate support the penetration of the semiconductor chips into the deformable chip carrier plate. Such a device has the advantage that the upper side of the transfer plate does not touch the deformable material of the chip carrier plate and sticking to it is avoided. The chip carrier plate preferably has a thermoplastic plastic.
Alternativ kann die Vorrichtung zur Durchführung des erfin- dungsgemäßen Verfahrens eine Transferplatte aus verformbarem Material, wie einer thermoplastischen Folie, aufweisen und die Chipträgerplatte ein formstabiles Material besitzen. Dabei sind die Halbleiterchips mit ihren Oberseiten auf der formstabilen Chipträgerplatte angeordnet. Bei Erwärmen und Zusammenpressen von Transfer- und Chipträgerplatte werden die Rückseiten und die Randseiten der Halbleiterchips in die verformbare Transferplatte eingepresst. Dabei entsteht auf der Oberseite der Chipträgerplatte eine Ebene, die aus verformbarem Material der Transferplatte und den Oberseiten der Halbleiterchips gebildet ist. Bei dieser Alternative nimmt die Transferplatte die Halbleiterchips auf, während die formstabile Chipträgerplatte abschließend entfernt wird, um einen Zugriff zu den Kontaktflächen auf der Oberseite der Halbleiterchips und ein Aufbringen einer Umverdrahtungsstruktur auf die gemeinsame Ebene aus Transferplattenmaterial und Oberseiten der Halbleiterchips zu gewährleisten.Alternatively, the device for carrying out the method according to the invention can have a transfer plate made of deformable material, such as a thermoplastic film, and the chip carrier plate can have a dimensionally stable material. The top of the semiconductor chips are on the dimensionally stable chip carrier plate arranged. When the transfer and chip carrier plates are heated and pressed together, the rear sides and the edge sides of the semiconductor chips are pressed into the deformable transfer plate. This creates a plane on the upper side of the chip carrier plate, which is formed from deformable material of the transfer plate and the upper sides of the semiconductor chips. In this alternative, the transfer plate accommodates the semiconductor chips, while the dimensionally stable chip carrier plate is finally removed in order to ensure access to the contact areas on the top side of the semiconductor chips and to apply a rewiring structure to the common level of transfer plate material and top sides of the semiconductor chips.
Für beide Varianten weist der Vorrichtung eine Flächenpresse auf. Diese Flächenpresse hat ihrerseits mindestens eine aufheizbare Pressfläche, mit der die Transferplatte und/oder die Chipträgerplatte über die niedrigere der beiden Glasübergangstemperaturen erwärmt werden kann. Die aufgeheizten Pressflächen mit Transferplatte beziehungsweise Chipträgerplatte werden präzise bis zu einer Nivellierung der Oberseiten von Halbleiterchips und verformbarem Material aufeinan- dergepresst .The device has a surface press for both variants. This surface press in turn has at least one heatable pressing surface with which the transfer plate and / or the chip carrier plate can be heated above the lower of the two glass transition temperatures. The heated pressing surfaces with transfer plate or chip carrier plate are pressed together precisely until the tops of semiconductor chips and deformable material are leveled.
Zusammenfassend ist festzustellen, dass die einzelnen Chips in einem definierten Abstand auf einem Thermoplastträger zu einem Chipnutzen aufgebracht sind. Das Umhüllen und Einbetten der einzelnen Chips erfolgt durch Hitze und eine definierte Krafteinwirkung. Mit diesem Verfahren und der erfindungsgemä- ßen Vorrichtung sind folgende Vorteile verbunden:In summary, it can be stated that the individual chips are applied to a chip benefit at a defined distance on a thermoplastic carrier. The individual chips are encased and embedded using heat and a defined force. The following advantages are associated with this method and the device according to the invention:
1) Kein chemischer Schrumpf,1) no chemical shrinkage,
2) die Nutzengröße wird nicht durch die Materialeigenschaften limitiert, 3) eine Positionsgenauigkeit der Halbleiterchips in unabhängig von dem Material des Nutzens,2) the size of the benefit is not limited by the material properties, 3) a positional accuracy of the semiconductor chips regardless of the material of the panel,
4) eine Kostenreduzierung während der Nutzenmontage,4) a reduction in costs during assembly of the panels,
5) keine zusätzlichen Trägermaterialien oder Schutzmateria- lien erforderlich,5) no additional carrier materials or protective materials required,
6) es besteht die Möglichkeit der Verwendung von Thermoplasten für Trägerplatte und Transferplatte, was eine erhöhte thermische und mechanische Belastung bei Folgeprozessen ermöglicht, 7) eine Einsatzmöglichkeit von strahlungsvernetzten Thermoplasten, die nach entsprechender Behandlung, beispielsweise mit Betastrahlen, duroplastische Eigenschaften aufweisen,6) there is the possibility of using thermoplastics for the carrier plate and transfer plate, which enables increased thermal and mechanical stress in subsequent processes, 7) the possibility of using radiation-crosslinked thermoplastics which, after appropriate treatment, for example with beta rays, have thermosetting properties,
8) Kosteneinsparung durch die Herstellung von großen Nut- zen,8) Cost savings through the production of large benefits,
9) Verwendung von kostengünstigen Materialien,9) use of inexpensive materials,
10) Kostenreduzierung durch Testen der Bauelemente im Nutzen.10) Cost reduction by testing the components in use.
Aufgrund der Eigenschaften der Thermoplaste und aufgrund der nivellierten gemeinsamen Oberfläche aus Oberflächen der Halbleiterchips und Kunststoffoberflächen können in vorteilhafter Weise für die Weiterverarbeitung Dünnfilmtechniken, wie Sput- tern, Photolithographie, galvanisches Verstärken von Metall- schichten sowie Trocken- und Nassätzen eingesetzt werden.Due to the properties of the thermoplastics and due to the leveled common surface consisting of surfaces of the semiconductor chips and plastic surfaces, thin-film techniques such as sputtering, photolithography, galvanic reinforcement of metal layers as well as dry and wet etching can advantageously be used for further processing.
Ferner können mit Hilfe von Dickfilmtechniken um eine Größenordnung breitere Verbindungsleitungen hergestellt werden. Darüber hinaus ist es möglich zur Herstellung von Verbindungsleitungen elektrisch leitende Kunststoffe mittels Dis- pensen auf die gemeinsame Oberfläche aufzubringen.Furthermore, connecting lines can be produced by an order of magnitude using thick film techniques. In addition, it is possible to apply electrically conductive plastics to the common surface by means of dispensers for the production of connecting lines.
Die Erfindung wird nun anhand der beiliegenden Figuren näher erläutert. Figur 1 zeigt einen schematischen Querschnitt einer Vorrichtung zur Durchführung des erfindungsgemäßen Verfahrens,The invention will now be explained in more detail with reference to the accompanying figures. FIG. 1 shows a schematic cross section of a device for carrying out the method according to the invention,
Figur 2 zeigt einen schematischen Querschnitt einer alternativen Vorrichtung zur Durchführung des erfindungsgemäßen Verfahrens,FIG. 2 shows a schematic cross section of an alternative device for carrying out the method according to the invention,
Figur 3 zeigt einen schematischen Querschnitt eines Chipnutzens, der mit Hilfe einer der Vorrichtungen gemäß Figur 1 oder Figur 2 hergestellt ist,FIG. 3 shows a schematic cross section of a chip benefit which is produced with the aid of one of the devices according to FIG. 1 or FIG. 2,
Figur 4 zeigt eine prinzipielle Draufsicht eines Chipnut- zens gemäß Figur 3.FIG. 4 shows a basic plan view of a chip use according to FIG. 3.
Figur 1 zeigt einen schematischen Querschnitt einer Vorrichtung zur Durchführung des Verfahrens. Diese Vorrichtung weist eine formstabile Transferplatte 5 auf, die mit Transferstem- peln 9 bestückt ist. Ferner weist die Vorrichtung eine verformbare Chipträgerplatte 2 auf, die auf ihrer Oberseite 3 in Zeilen und Spalten angeordnete Halbleiterchips 4 aufweist. Während die verformbare Chipträgerplatte 2 einen Thermoplast aufweist, ist die Transferplatte formstabil und aus einem Du- roplast hergestellt. Die Glasübergangstemperatur des Thermoplasten der Chipträgerplatte 2 liegt dabei unterhalb der Zersetzungstemperatur des Duroplasten der Transferplatte 5.Figure 1 shows a schematic cross section of an apparatus for performing the method. This device has a dimensionally stable transfer plate 5 which is equipped with transfer stamps 9. Furthermore, the device has a deformable chip carrier plate 2, which has semiconductor chips 4 arranged in rows and columns on its upper side 3. While the deformable chip carrier plate 2 has a thermoplastic, the transfer plate is dimensionally stable and made from a thermoplastic. The glass transition temperature of the thermoplastic of the chip carrier plate 2 is below the decomposition temperature of the thermoset of the transfer plate 5.
Zum Einformen der Halbleiterchips in das Thermoplastmaterial der Chipträgerplatte 2 kann die Vorrichtung die Chipträgerplatte 2 und die Transferplatte 5 auf eine Verfahrenstemperatur oberhalb der Glasübergangstemperatur der Chipträgerplatte 2 und unterhalb der Zersetzungstemperatur des Duroplasten der Transferplatte 5 aufheizen. Vor einem Zusammenfahren der Transferplatte 5 und der Chipträgerplatte 2 werden die Platten 2 und 5 derart aufeinander ausgerichtet, dass die Transferstempel 9 mit ihren Stempelflächen 8 deckungsgleich zu den Halbleiterchips 4 auf der Chipträgerplatte 2 ausgerichtet sind. Darüber hinaus sind Flächengröße und Anordnung der Stempelflächen 8 an die Oberseiten 6 der Halbleiterchips 4 angepasst .For molding the semiconductor chips into the thermoplastic material of the chip carrier plate 2, the device can raise the chip carrier plate 2 and the transfer plate 5 to a process temperature above the glass transition temperature of the chip carrier plate 2 and below the decomposition temperature of the thermoset Heat up the transfer plate 5. Before the transfer plate 5 and the chip carrier plate 2 move together, the plates 2 and 5 are aligned with one another in such a way that the transfer stamps 9 are aligned with their stamp surfaces 8 coincident with the semiconductor chips 4 on the chip carrier plate 2. In addition, the size and arrangement of the stamp surfaces 8 are adapted to the upper sides 6 of the semiconductor chips 4.
Nach einem Ausrichten von Transferplatte 5 und Chipträgerplatte 2 sowie einem Erwärmen der Platten 2 und 5 fährt eine nicht gezeigte Vorrichtung mit Pressplatten, zwischen denen Chipträgerplatte 2 und Transferplatte 5 angeordnet sind, die beiden Platten 2 und 5 aufeinander zu. Dabei pressen die Transferstempel 9 die Halbleiterchips 4 in die erweichteAfter aligning the transfer plate 5 and chip carrier plate 2 and heating the plates 2 and 5, a device (not shown) with press plates, between which the chip carrier plate 2 and transfer plate 5 are arranged, moves the two plates 2 and 5 towards one another. The transfer stamps 9 press the semiconductor chips 4 into the softened
Thermoplastmasse der Chipträgerplatte 2. Das Zusammenfahren von Transferplatte 5 und Chipträgerplatte 2 wird gestoppt, wenn die Oberseiten 6 der Halbleiterchips 4 mit der Oberseite 3 der verformbare Chipträgerplatte 2 nivelliert sind und eine gemeinsame Oberseite ausbilden.Thermoplastic mass of the chip carrier plate 2. The moving together of transfer plate 5 and chip carrier plate 2 is stopped when the upper sides 6 of the semiconductor chips 4 are leveled with the upper side 3 of the deformable chip carrier plate 2 and form a common upper side.
Figur 2 zeigt einen schematischen Querschnitt einer alternativen Vorrichtung zur Durchführung des erfindungsgemäßen Verfahrens. Bei der alternativen Vorrichtung gemäß Figur 2 weist die Chipträgerplatte 2 einen bei der Verfahrenstemperatur formstabilen Kunststoff auf. Auf der Oberseite 3 der formstabilen Chipträgerplatte 2 sind Halbleiterchips 4 in Zeilen und Spalten angeordnet. Darüber hinaus weist die Vorrichtung eine Transferplatte 5 auf, die aus einem Thermoplastkunststoff be- steht, dessen Glasübergangstemperatur unterhalb der Verfahrenstemperatur liegt. Beim Erwärmen von aufheizbaren Pressflächen einer nicht gezeigten Pressvorrichtung erweicht die Transferplatte 5. Beim nachfolgenden Zusammenfahren der Pressflächen werden die Halbleiterchips 4 auf der formstabilen Chipträgerplatte 2 in den Thermoplast der Transferplatte 5 eingepresst.Figure 2 shows a schematic cross section of an alternative device for performing the method according to the invention. In the alternative device according to FIG. 2, the chip carrier plate 2 has a plastic that is dimensionally stable at the process temperature. Semiconductor chips 4 are arranged in rows and columns on the top 3 of the dimensionally stable chip carrier plate 2. In addition, the device has a transfer plate 5, which consists of a thermoplastic whose glass transition temperature is below the process temperature. When heating up heatable pressing surfaces of a pressing device, not shown, the transfer plate 5 softens The semiconductor chips 4 on the dimensionally stable chip carrier plate 2 are pressed into the thermoplastic of the transfer plate 5 by pressing surfaces.
Die formstabile Chipträgerplatte 2 aus Glas, Keramik oder einer Folie aus Duroplast oder einer Thermoplastplatte mit höherer Glasübergangstemperatur als die Verfahrenstemperatur kann nach dem Einbetten der Halbleiterchips 4 in die verformbare Transferplatte 5 entfernt werden. Ein derartiges Entfer- nen ist durch Absprengen, Abätzen, Absputtern oder durch Abziehen beispielsweise einer Folie von der erkalteten Oberseite der Transferplatte 5 nach Einbetten der Rückseiten und Randseiten der Halbleiterchips 4 in den Thermoplast der Transferplatte 5 möglich.The dimensionally stable chip carrier plate 2 made of glass, ceramic or a film made of thermoset or a thermoplastic plate with a higher glass transition temperature than the process temperature can be removed after the semiconductor chips 4 have been embedded in the deformable transfer plate 5. Such removal is possible by blasting, etching, sputtering or by pulling off a film, for example, from the cooled upper side of the transfer plate 5 after embedding the rear sides and edge sides of the semiconductor chips 4 in the thermoplastic of the transfer plate 5.
Der Unterschied zwischen den beiden Vorrichtungen liegt einerseits in den unterschiedlichen Materialien von Chipträgerplatte 2 und Transferplatte 5 sowie in der unterschiedlichen Anordnung der Halbleiterchips auf der Chipträgerplatte 2. Im Verfahren gemäß Figur 1 werden die Rückseiten der Halbleiterchips auf der verformbaren Chipträgerplatte 2 angeordnet. Hingegen im Verfahren gemäß Figur 2 werden die Oberseiten β der Halbleiterchips 4 auf der Oberseite 3 der formstabilen Chipträgerplatte angeordnet.The difference between the two devices lies on the one hand in the different materials of chip carrier plate 2 and transfer plate 5 and in the different arrangement of the semiconductor chips on the chip carrier plate 2. In the method according to FIG. 1, the rear sides of the semiconductor chips are arranged on the deformable chip carrier plate 2. In contrast, in the method according to FIG. 2, the upper sides β of the semiconductor chips 4 are arranged on the upper side 3 of the dimensionally stable chip carrier plate.
Figur 3 zeigt einen schematischen Querschnitt eines Chipnutzens 1, der mit Hilfe einer der Vorrichtungen gemäß Figur 1 oder Figur 2 hergestellt ist. Dieser Chipnutzen 1 zeichnet sich durch eine gemeinsame und nivellierte Oberseite 7 aus Oberseiten 6 der Halbleiterchips 4 und Oberseiten entweder einer Chipträgerplatte oder einer Transferplatte, wie sie in den Figuren 1 und 2 gezeigt werden, aus. Auf diese gemeinsame Oberseite 7 des Chipnutzens 1 kann ohne weitere Zwischen- schritte eine Umverdrahtungsstruktur aufgebracht werden, die einen Zugriff zu den freiliegenden Oberseiten 6 der Halbleiterchips 4 und damit zu den integrierten der Schaltungen Halbleiterchips 4 ermöglicht. Außerdem kann die Umverdrahtungsstruktur mit Außenkontaktflachen versehen werden und diese wiederum mit Außenkontakten, so dass ein derartiger Chipnutzen mit relativ wenigen Fertigungsschritten herstellbar und zu einzelnen elektronischen Bauteilen auftrennbar ist .Figure 3 shows a schematic cross section of a chip 1, which is produced with the aid of one of the devices according to Figure 1 or Figure 2. This chip benefit 1 is characterized by a common and leveled top side 7 consisting of top sides 6 of the semiconductor chips 4 and top sides of either a chip carrier plate or a transfer plate, as shown in FIGS. 1 and 2. This common upper side 7 of the chip benefit 1 can be used without further intermediate steps, a rewiring structure is applied, which enables access to the exposed upper sides 6 of the semiconductor chips 4 and thus to the integrated semiconductor circuits 4. In addition, the rewiring structure can be provided with external contact surfaces and these in turn with external contacts, so that such a chip benefit can be produced with relatively few manufacturing steps and can be separated into individual electronic components.
Figur 4 zeigt eine prinzipielle Draufsicht eines Chipnutzens gemäß Figur 3. Die Oberseiten 6 der Halbleiterchips 4 sind dabei in Zeilen 10 und Spalten 11 angeordnet, wobei zwischen den Halbleiterchips 4 der Abstand a zwischen Spalten 11 und der Abstand b zwischen Zeilen 10 mit einer thermoplastischen Kunststoffmasse aufgefüllt ist. Mit Hilfe eines derartigen Chipnutzens 1 kann die zur Verfügung stehende Fläche zur Anordnung von Außenkontakten gegenüber der reinen Chipoberflächengröße beliebig vergrößert werden, was lediglich von dem Abstand a beziehungsweise dem Abstand b zwischen den Halbleiterchips abhängt. FIG. 4 shows a basic plan view of a chip benefit according to FIG. 3. The top sides 6 of the semiconductor chips 4 are arranged in rows 10 and columns 11, with the distance a between columns 11 and the distance b between rows 10 with a thermoplastic plastic mass between the semiconductor chips 4 is filled. With the help of such a chip 1, the area available for arranging external contacts can be increased as desired compared to the pure chip surface size, which only depends on the distance a or the distance b between the semiconductor chips.

Claims

Patentansprücheclaims
1. Verfahren zur Herstellung eines Chipnutzens (1) mittels eines Hitze- und Druckprozesses unter Verwendung eines thermoplastischen Materials, das folgende Verfahrensschritte aufweist:1. A method for producing a chip benefit (1) by means of a heat and pressure process using a thermoplastic material, which has the following process steps:
Bereitstellen einer Chipträgerplatte (2), Bestücken der Chipträgerplatte (2) auf einer Oberseite (3) mit Halbleiterchips (4) in Zeilen (10) und Spalten (11) unter Einhaltung eines Abstands zwischen den Halbleiterchips (4), Bereitstellen einer Transferplatte (5) , Erwärmen von Chipträgerplatte (2) und/oder Transferplatte (5), wobei entweder die Chipträgerplatte (2) oder die Transferplatte (2) verformbar erweicht, während die andere formstabil bleibt, Zusammenpressen von Transferplatte (5) und Chipträgerplatte (2) unter Einpressen der Halbleiterchips (4) in die verformbare Transfer- (5) bzw. Chipträ- gerplatte (2) bis eine Oberseite der verformbarenProviding a chip carrier plate (2), equipping the chip carrier plate (2) on an upper side (3) with semiconductor chips (4) in rows (10) and columns (11) while maintaining a distance between the semiconductor chips (4), providing a transfer plate (5 ), Heating the chip carrier plate (2) and / or transfer plate (5), whereby either the chip carrier plate (2) or the transfer plate (2) softens deformably while the other remains dimensionally stable, pressing the transfer plate (5) and chip carrier plate (2) under Pressing the semiconductor chips (4) into the deformable transfer (5) or chip carrier plate (2) up to an upper side of the deformable
Transfer- (5) bzw. Chipträgerplatte (2) und Oberseiten (6) der Halbleiterchips (2) eine gemeinsame und im wesentlichen nivellierte Oberseite (7) aufweisen, - Entfernen der Transferplatte (5) und/oder der Chipträgerplatte (2) .Transfer (5) or chip carrier plate (2) and top sides (6) of the semiconductor chips (2) have a common and essentially leveled top side (7), - removing the transfer plate (5) and / or the chip carrier plate (2).
2 . Verfahren nach Anspruch 1 , d a d u r c h g e k e n n z e i c h n e t , d a s s die Chipträgerplatte (2) oder die Transferplatte (5) aus einem Kunststoff hergestellt wird, der beim Erwärmungsschritt über seine Glasübergangstemperatur erhitzt wird. 2nd A method according to claim 1, characterized in that the chip carrier plate (2) or the transfer plate (5) is made of a plastic which is heated above its glass transition temperature in the heating step.
. Vorrichtung, insbesondere zur Durchführung des Verfahrens nach Anspruch 1 oder Anspruch 2, dadurch gekennzeichnet, dass die Transferplatte (5) aus einem während des Erwärmungs- schritts formstabilen Material hergestellt und mit Stempelflächen (8) versehen ist, wobei die Stempelflächen (8) in Anordnung und Flächengröße der Anordnung und Größe der Halbleiterchips (4) auf einer Chipträgerplatte (2) aus verformbarem Material angepasst und zu der Chipträgerplatte (2) ausgerichtet sind und wobei die, Device, in particular for carrying out the method according to claim 1 or claim 2, characterized in that the transfer plate (5) is made of a dimensionally stable material during the heating step and is provided with stamp surfaces (8), the stamp surfaces (8) being arranged and the area size of the arrangement and size of the semiconductor chips (4) on a chip carrier plate (2) made of deformable material are adapted and aligned with the chip carrier plate (2) and wherein the
Stempelflächen (8) beim Zusammenpressen von Chipträgerplatte (2) und Transferplatte (5) das Eindringen der Halbleiterchips (4) in die verformbare Chipträgerplatte (2) unterstützen.Stamp surfaces (8) support the penetration of the semiconductor chips (4) into the deformable chip carrier plate (2) when the chip carrier plate (2) and transfer plate (5) are pressed together.
4. Vorrichtung, insbesondere zur Durchführung des Verfahrens nach Anspruch 1 oder Anspruch 2, dadurch ge ennzeichnet, dass die Transferplatte (5) eine verformbare Platte oder thermoplastische Folie aufweist und die Chipträgerplatte (2) eine formstabiles Material aufweist, wobei sich die Halbleiterchips (4) mit ihren Oberseiten (6) auf der formstabilen Chipträgerplatte (2) bei Erwärmung und Zusammenpressung von Transfer- (5) und Chipträgerplatte (2) in die Transferplatte (5) einpressbar sind.4. The device, in particular for performing the method according to claim 1 or claim 2, characterized in that the transfer plate (5) has a deformable plate or thermoplastic film and the chip carrier plate (2) has a dimensionally stable material, the semiconductor chips (4th ) can be pressed into the transfer plate (5) with their upper sides (6) on the dimensionally stable chip carrier plate (2) when the transfer plate (5) and chip carrier plate (2) are heated and pressed together.
5. Vorrichtung nach Anspruch 3 oder 4, dadurch ge ennzeichnet, dass die Vorrichtung eine Flächenpresse aufweist, zwischen deren aufheizbaren Pressflächen Transferplatte (5) und Chipträgerplatte (2) präzise bis zu einer Nivellierung der Oberseiten von Halbleiterchips (4) und verformbarem Material der Transfer- (5) oder Chipträgerplatte (2) aufeinander pressbar sind. 5. The device according to claim 3 or 4, characterized in that the device has a surface press, between the heatable pressing surfaces transfer plate (5) and chip carrier plate (2) precisely up to a leveling of the tops of semiconductor chips (4) and deformable Material of the transfer (5) or chip carrier plate (2) can be pressed onto one another.
EP04707481A 2003-02-05 2004-02-03 Method for producing a chip panel by means of a heating and pressing process using a thermoplastic material Withdrawn EP1590829A2 (en)

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DE10304777A1 (en) 2004-08-19
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WO2004070769A2 (en) 2004-08-19
US20060258056A1 (en) 2006-11-16

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