EP1580844B1 - Phasenschieber mit linearer Polarisation und einer durch mems-Schalter variablen Resonanzlänge - Google Patents

Phasenschieber mit linearer Polarisation und einer durch mems-Schalter variablen Resonanzlänge Download PDF

Info

Publication number
EP1580844B1
EP1580844B1 EP05290642A EP05290642A EP1580844B1 EP 1580844 B1 EP1580844 B1 EP 1580844B1 EP 05290642 A EP05290642 A EP 05290642A EP 05290642 A EP05290642 A EP 05290642A EP 1580844 B1 EP1580844 B1 EP 1580844B1
Authority
EP
European Patent Office
Prior art keywords
slot
ground plane
cell according
resonant
mems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP05290642A
Other languages
English (en)
French (fr)
Other versions
EP1580844A1 (de
Inventor
Hervé Legay
Gérard Caille
Alexandre Laisne
David Cadoret
Raphael Gillard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Publication of EP1580844A1 publication Critical patent/EP1580844A1/de
Application granted granted Critical
Publication of EP1580844B1 publication Critical patent/EP1580844B1/de
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/23—Combinations of reflecting surfaces with refracting or diffracting devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H01Q21/0018—Space- fed arrays

Definitions

  • the invention relates to the field of reflector array antennas (or “reflectarray antennas”), and more particularly the phase-shifting cells that equip such antennas.
  • the reflector network antennas constitute one of the two main families of network antennas, the other family consisting of phased array antennas (or "Phased Array Antennas"). These network antennas are particularly interesting because they can be reconfigured, for example to allow the passage of a coverage area (or “spot”) to another.
  • a reflective array antenna is constituted by radiating elements charged with intercepting with minimal losses of the waves, comprising signals to be transmitted, delivered by a primary source, in order to reflect them in a chosen direction, called the pointing direction.
  • each radiating element is equipped with a phase control device with which it constitutes a passive or active phase-shifting cell.
  • phase-shifting cell is meant here both the cavity and radiating slot structures and planar resonant structures radiating pad (or “patch”).
  • the invention is more particularly directed to active phase shifting cells with linear polarization.
  • phase-shifter cell provided either with a switch (or switch) consisting of diodes (generally PIN type), or MESFETs, or alternatively varactors, or mechanical control means (such as for example a loaded motor). to move a dielectric bar).
  • switch or switch
  • diodes generally PIN type
  • MESFETs or alternatively varactors
  • mechanical control means such as for example a loaded motor
  • phase switch cells consume a large amount of energy and are subject to significant losses and overheating.
  • Mechanically controlled phase shifters are complex to put particularly in the case of large networks, and energy consumers. In either case, the disadvantages induced by the phase control techniques used limit the applications of phase-shifting cells, especially in the space domain and more specifically in observation platforms such as satellites.
  • the object of the invention is therefore to improve the situation in the case of linear polarized active phase-shifter cell reflector array antennas.
  • a phase-shifted cell having a characteristic resonant length and comprising in at least one selected location a micron electromechanical device, MEMS type (for "Micro ElectroMechanical System”), which can be placed in at least two different states allowing and prohibiting respectively establishing a short circuit for varying the characteristic resonant length, to vary the phase shift of the waves to reflect which have at least one linear polarization.
  • MEMS type for "Micro ElectroMechanical System”
  • Each MEMS device may for example comprise a flexible conductor bridge whose states are controlled by two substantially superimposed control electrodes and one of which is constituted by the bridge.
  • each MEMS device may comprise a suspended conductive flexible beam (or "cantilever") whose states are controlled by a control electrode placed below its suspended part.
  • the cell according to the invention comprises a resonant planar structure comprising at least one rectangular upper block placed substantially parallel to a lower ground plane, at a selected distance, the lower ground plane defining at least one conductive "pad", for example rectangular , entirely surrounded by a non-conductive zone, placed below the upper pavement and of smaller dimensions than its own.
  • the cell comprises at least one metallized bushing connecting the upper pad to the pad, and the MEMS device is placed at the level of the non-conductive zone in order to establish in one of its states a connection between the pellet and the rest of the mass plan to control the resonant length of the upper pad.
  • the lower ground plane may optionally define at least two pellets (for example rectangular) completely surrounded by a non-conductive area, placed below the upper pad and of smaller dimensions than hers.
  • the cell comprises at least two metallized bushings respectively connecting the upper block to one of the pads, and at least two MEMS devices each placed at one of the non-conductive areas to establish links between the at least one of the pellets and the rest of the ground plane, thus making it possible to define at least three resonant lengths of different upper pavement according to their states.
  • the cell may comprise a higher ground plane comprising at least one radiating slot, provided with a MEMS device controlling its characteristic resonant length, a lower ground plane, and metallized vias connecting the plane. of lower mass to peripheral portions of the upper ground plane to define a resonant cavity.
  • the upper ground plane may comprise at least two radiating slots each provided with a single MEMS device controlling their characteristic resonant length. Each MEMS device can then be preferentially placed substantially in the middle of a radiating slot.
  • the slots are preferably substantially parallel to each other and may have slightly different lengths. But, they may also have a curved shape, so as to achieve together a short annular slot circuited at two substantially opposite points.
  • the upper ground plane may comprise a radiating slot, provided with at least two MEMS devices for defining at least three different resonant lengths according to their states.
  • the upper ground plane may optionally comprise at least one rectangular radiating slot having long sides parallel to a first direction, and at least one other rectangular radiating slot having long sides parallel to a second direction perpendicular to the first, so to allow a double linear polarization.
  • the cell may comprise a resonant planar structure comprising an upper block placed substantially parallel to a lower ground plane at a selected distance.
  • the block comprises at least one slot provided with at least one MEMS device controlling its characteristic resonant length.
  • the cell may then comprise a single slot (of half-wave length) provided with at least two MEMS devices, making it possible to define at least three different resonant lengths according to their states.
  • the upper block may be substantially square, and the cell may comprise at least a first and a second rectangular slot (quarter-wavelength) placed substantially opposite one another, opening on two opposite sides non-radiating square, and each having at least two MEMS devices for defining at least three different resonant lengths according to their states.
  • the cell may also comprise at least third and fourth rectangular slots (quarter-wave length) placed substantially opposite one another, opening on two other opposite non-radiating sides of the square, and each comprising at least two MEMS devices, making it possible to define at least three other different resonant lengths according to their states, in order to allow a linear double polarization. It is also possible to provide several upper blocks each provided with at least a half quarter wave slot, pairs of half slots facing then forming half-wave slots.
  • the bridge In the presence of a MEMS bridge device and slot (s) rectangular (s), the bridge is preferably placed substantially parallel to the long sides of the slot.
  • a beam MEMS device and of rectangular slot (s) said beam is preferably placed substantially perpendicular to the long sides of the slot.
  • the lower ground plane can define a lower block placed below the upper block and of smaller dimensions than its own.
  • the cell comprises metallized vias which connect the plane. of mass to peripheral parts of the upper block to define a resonant cavity.
  • This pavement and cavity structure defines yet another family of phase-shifting cells.
  • the invention also proposes a reflector array antenna equipped with at least two phase-shifting cells of the type of those presented above.
  • the invention is particularly well suited, although not exclusively, to Ku-band (12 to 18 GHz) geostationary telecommunication antennas, with reconfigurable coverage (orbital position change, traffic adaptation), and band radar antennas.
  • C (4 to 8 GHz) or in the X band (8 to 12 GHz), in particular for radars of SAR type (radars with synthetic aperture).
  • the invention relates to a linear polarization active phase shifter cell for an active reflector array antenna.
  • the reflector array antenna may for example be dedicated to telecommunications, for example of the Ku-band geostationary type (12 to 18 GHz), with reconfigurable coverage (orbital position change or traffic adaptation), or to C-band radars ( 4 to 8 GHz) or in the X band (8 to 12 GHz), in particular for radars of SAR type (synthetic aperture radars), or high-speed ISL-RF type links, particularly inside a small constellation of satellites flying in formation.
  • telecommunications for example of the Ku-band geostationary type (12 to 18 GHz), with reconfigurable coverage (orbital position change or traffic adaptation), or to C-band radars ( 4 to 8 GHz) or in the X band (8 to 12 GHz), in particular for radars of SAR type (synthetic aperture radars), or high-speed ISL-RF type links, particularly inside a small constellation of satellites flying in formation.
  • a phase-shifting cell comprises in one or more selected locations a micron electromechanical device, MEMS type (for "Micro ElectroMechanical System”).
  • MEMS type for "Micro ElectroMechanical System”
  • Each MEMS device can be placed, using electrical controls, in at least two different states enabling and prohibiting respectively the establishment of a short circuit intended to vary a characteristic resonant length of the cell, in order to vary the phase shift of the waves to be reflected (coming from the source of the antenna) having at least one polarization linear.
  • phase-shifting cell can be broken down into three large families according to its radiating structure.
  • a first family groups the cavity and slit (s) radiating structures, a second family groups planar resonant structures (or "patches") and a third family groups planar resonant cavity structures.
  • phase shifter cell CD comprising a substrate SB having a "rear” (or “lower”) face, secured to a ground plane “lower” PM1, and a face “before” (or “upper”) , secured to an "upper” mass plane PM2.
  • the substrate SB is for example made of Duroid or TMM and has a thickness d equal, for example, to ⁇ / 4, where ⁇ is the wavelength in the vacuum of the waves to be reflected, coming from the source of the antenna .
  • the lower ground planes PM1 and upper PM2 are electrically connected to each other via metallized holes (or vias) TM formed in the substrate SB.
  • metallized holes or vias
  • These planes are for example made from substrates of alumina, silicon or glass which, because of their small thicknesses (typically 500 microns) must be reported on a substrate SB Duroid or TMM so as to allow obtaining a thickness equal to ⁇ / 4.
  • the metallized holes TM are preferably implanted at the periphery of the lower mass planes PM1 and PM2 higher so as to define a resonant cavity.
  • a first technique consists in superimposing a Duroid (or Metclad) substrate, for example with a thickness of about 3 mm, on an alumina substrate, for example with a thickness of about 0.254 mm, and then depositing a lower ground plane PM1 on the underside of the Duroid substrate and an upper ground plane PM2, on the upper face of the alumina substrate, said upper ground plane PM2 being locally interrupted by the slots.
  • a Duroid (or Metclad) substrate for example with a thickness of about 3 mm
  • an alumina substrate for example with a thickness of about 0.254 mm
  • a second technique consists in using only a Duroid (or Metclad) substrate, for example of thickness equal to approximately 2 or 3 mm, and then forming on its upper face portions of an intermediate ground plane in which are formed voltage control lines, then to report on this upper surface portions of alumina substrates, for example of thickness equal to about 0.254 mm, having on an upper face a ground plane PM2 each comprising one or more slots, then to deposit a lower ground plane PM1 on the underside of the Duroid substrate, and finally to connect the lower ground plane, intermediate and upper by two levels of holes (or traverses) metallized.
  • the upper ground plane PM2 comprises a single radiating slot FR, preferably of rectangular shape defined by two long sides (longitudinal), of length b, and two small sides (transverse), of width a.
  • This radiating slot FR is for example made by etching the upper ground plane PM2.
  • the radiating slot FR has a resonance of parallel LC type.
  • the parameters of such a resonator depend mainly on the length b and width a of the radiating gap FR, as well as the permittivity ⁇ r of the substrate SB.
  • the cavity has a cutoff frequency equal to 18.75 GHz and operates only in its fundamental mode, this which corresponds to a guided wavelength ⁇ g equal to approximately 16.14 mm, in the case of an air cavity.
  • phase shifts of up to 360 ° can be obtained for slot widths FR of between approximately 0.25 mm. and about 1 mm.
  • the point of inflection of the phase shift is obtained at the resonance of the slot FR, which corresponds to a length b equal to about 5.5 mm, taking into account other values mentioned above.
  • the radiating slot FR is preferably centered in the middle of the upper ground plane PM2. But, it could be otherwise, especially in the presence of a possible complementary parasitic slot. In the latter case, the slots are located preferentially symmetrically with respect to the center of the cell.
  • the radiating slot FR is provided with three MEMS devices DC each constituting a two-state switch.
  • the radiating slot could comprise a different number of MEMS DC devices as long as it is at least one.
  • Each MEMS DC device here consists of a flexible PT conductive bridge whose two ends are secured to the holding pads PL themselves secured to the upper face of the substrate SB. These PL pads are for example made of gold or aluminum and have a thickness slightly greater than that of the upper ground plane PM2.
  • the flexible bridge PT is made in the form of a blade made conductive, for example by a metallization in gold or aluminum, and installed in the slot FR substantially parallel to its longitudinal edges.
  • each MEMS DC device comprises two substantially superimposed control electrodes, one of them being constituted by the flexible bridge PT, and the other being, for example, placed at a level of above the flexible bridge PT (not shown), these two electrodes being connected to a supply circuit (not shown).
  • the suspended portion of the bridge PT In the presence of a control current selected at the control electrodes, the suspended portion of the bridge PT is attracted to said LA access lines. The suspended portion then flexes to come into contact with the two access lines LA, which locally generates a short circuit in the radiating slot FR and reduces its characteristic resonant length (b), which is its electrical length. This is one of the two states of the MEMS DC device.
  • the bridge PT In the absence of control current, the bridge PT is remote from the access lines LA, so that the length of the radiating gap FR is not disturbed. This is the other state of the MEMS DC device.
  • the positions of the different MEMS DC devices are chosen so as to perform a regular quantization of the phase law. This positional constraint favors the implementation of MEMS devices at the edge of the slot.
  • These different resonant lengths correspond to different phase shifts of the wave reflected by the phase-shifter cell CD.
  • phase-shifter cell CD of the first family is illustrated. This is a variant of the phase-shifting cell CD described above with reference to the Figures 1 and 2 . More specifically, what differentiates the first embodiment of the second is the embodiment of the MEMS devices.
  • each MEMS device DC comprises a flexible beam (or “cantilever") conducting PE having an end secured to a stud conductor support PL 'formed in the radiating gap FR along one of the longitudinal edges and electrically connected to the upper ground plane PM2.
  • a flexible beam (or “cantilever") conducting PE having an end secured to a stud conductor support PL 'formed in the radiating gap FR along one of the longitudinal edges and electrically connected to the upper ground plane PM2.
  • This pad PL ' is for example made of gold or aluminum and has a thickness slightly greater than that of the upper ground plane PM2, so that the beam PE is suspended above the radiating slot FR and the level of the ground plane higher PM2.
  • the flexible beam PE is made in the form of a made conductive blade, for example by means of a metallization in gold or aluminum, installed substantially perpendicular to its longitudinal edges. The free end of the beam PE crosses the slot FR in its width and overflows slightly on the upper ground plane PM2 at a location where is preferably placed an electrically conductive contact pad PLC.
  • each MEMS device DC ' comprises a control electrode EC' placed below the suspended central part of the beam PE, and connected to a supply circuit (not shown), another electrode being constituted by the flexible beam PE conductor.
  • the control electrode EC ' is formed on the upper face of the substrate SB, inside the radiating slot FR.
  • the suspended portion of the beam PE is drawn toward said electrode. It then flexes until its free end comes into contact with the PLC contact pad, which locally generates a short circuit in the radiating slot FR and reduces its characteristic resonant length (b), which is its electrical length. This constitutes one of the two states of the MEMS device DC '.
  • the radiating slot FR is provided with three MEMS devices DC '. But, the radiating slot FR could comprise a different number of devices MEMS DC 'when it is at least equal to one.
  • N 5
  • N of radiating slots illustrated is not limiting. It can take any value greater than or equal to two.
  • at least one of the slots is not equipped with a MEMS device.
  • the radiating slots have, for some, different lengths. More precisely, in the example illustrated, the upper ground plane PM2 comprises two end radiating slots FR1, having a first characteristic resonant length L1, two intermediate radiating slots FR2, having a second characteristic resonant length L2 greater than L1, and a central radiating slot FR3 having a third characteristic resonant length L3 greater than L2. In one variant, the five slots could have five different lengths.
  • the five radiating slots FR1 to FR3 are substantially centered with respect to the middle of the upper ground plane PM2, and their MEMS DC bridge PT device is also installed in a centered position. But, we could do differently. Indeed, in the example described above we run the undesirable slots, but we could also change the resonant length of some of them to excite several resonances and well control the phase shift between slots, with the coupling.
  • the distance separating two adjacent slits may be fixed or variable. It varies according to the needs. It is typically between about 100 ⁇ m and 500 ⁇ m.
  • the slot or slots that one does not wish to use are short-circuited by placing their MEMS DC devices in their first state (bent).
  • the phase variation of the reflected wave is here obtained by selecting one of the combinations of short-circuited and non-short-circuited slots.
  • Each combination corresponds in fact to a particular and discrete phase shift mainly function of the ratio between the smallest characteristic resonant length and the greatest characteristic resonant length.
  • Each slot short-circuited in the middle acts as a parasitic element for the neighboring non-shorted slot. This is to excite several resonances to have a range of acceptable phase shifts, while avoiding a very resonant response leading to low band performance.
  • the coupling between the different resonances made by coupling between a slot and a patch (or patch), makes it possible to attenuate the resonant response.
  • phase-shifter cell CD of the first family is illustrated. This is a variant of the phase-shifting cell CD described above with reference to the Figures 5 and 6 .
  • each MEMS DC device with a PT bridge is indeed replaced by a MEMS DC 'PE beam device, of the type of those described with reference to FIGS. Figures 3 and 4 .
  • phase-shifting cell CD is identical to that of the phase-shifting cell described above with reference to the Figures 5 and 6 .
  • At least one FRV radiating slot is oriented in a first direction (“vertical”), and at least one FRH radiating slot oriented in a second direction (“horizontal”), perpendicular to the first.
  • the phase-shifter cell CD may comprise one or more FRV radiating slots and one or more FRH radiating slots, as required.
  • the cell is then preferably rectangular and has a width substantially equal to half of its length.
  • FRV and FRH radiating slots with only one PT bridge or PE beam MEMS device, but it is preferable to use FRV and FRH radiating slots with at least two bridge MEMS devices. PT or PE beam (as shown).
  • phase shifter cell CD comprising a substrate SB having a rear face (or lower), secured to a lower ground plane PM1 defining a lower pad (or "patch”), and a front face (or upper) , secured to a higher ground plane defining an upper patch (or "patch”) PS.
  • the upper PS and lower PM1 blocks define a resonant planar structure.
  • the substrate SB is for example made of Duroid or TMM and has a thickness of weak, typically of the order of ⁇ / 10 to ⁇ / 5, where ⁇ is the wavelength in the vacuum of the waves to be reflected, from the source of the antenna.
  • the upper block PS is placed substantially parallel to the lower ground plane PM1 and has dimensions smaller than its own.
  • the upper block PS is of rectangular shape, and preferably square.
  • the upper block PS has a single slot FP, preferably of rectangular shape defined by two long sides (longitudinal), of length b, and two small sides (transverse), of width a.
  • This slot FP is for example made by etching the ground plane constituting the upper pad PS.
  • the slot FP is provided with three MEMS devices DC bridge PT each constituting a two-state switch, of the type of those described above with reference to the Figures 1 and 2 .
  • the slot FP could comprise a different number of MEMS devices DC when it is at least equal to one.
  • the operating principle of this phase-shifting cell CD is identical to that described above with reference to the Figures 1 and 2 . Only the physical effect involved differs.
  • the slot FP is here intended to disrupt the path of currents flowing in the upper pad PS.
  • short-circuit (s) selected (s) by means of at least one of the MEMS devices DC placed in its first state (skewed)
  • the current path disturbances are varied, which varies the characteristic resonant length (or electrical length) of the upper pad PS and thus the phase shift of the reflected wave.
  • phase shifter cell CD of the second family On the figure 12 is illustrated a second example of phase shifter cell CD of the second family. This is a variant of the phase-shifting cell CD described above with reference to the figures 10 and 11 . More specifically, what differentiates the first embodiment of the second is the embodiment of the MEMS devices.
  • each MEMS device DC ' is of PE beam type, as in the embodiment described above with reference to FIGS. Figures 3 and 4 .
  • the disturbing slot FP is provided with three MEMS devices DC '. But, the disturbing slot FP could comprise a different number of devices MEMS DC 'since this one is at least equal to one.
  • the third example illustrated on the figure 13 comprises two metallized holes (or traverses) TM for electrically coupling the upper pad PS and the lower ground plane PM1 on either side of the two opposite ends of the disturbing slot FP.
  • These metallized holes MT are intended to supply DC power to the upper pad PS so as to bias the MEMS device.
  • the upper block PS comprises two small disturbing slots F1 and F2, whose resonance corresponds approximately to a length equal to a quarter of the wavelength, placed substantially opposite one another and opening on opposite edges, non-radiating.
  • Each small slot F1, F2 is provided with at least one (here two) MEMS device PT bridge (but it could be a PE beam).
  • a metallized hole (or traverse) TM makes it possible to electrically couple the upper pad PS and the lower ground plane PM1 in a central portion located between the two small disturbing slots F1 and F2.
  • This metallized hole MT is intended to supply DC power to the upper pad PS so as to bias the MEMS device. It is conceivable to produce two small quarter-wave disruptive slots, or more, opening on at least one of the non-radiating sides.
  • the upper block PS (substantially square) comprises only a rectangular slot opening on a non-radiating side of the square and having at least two MEMS devices DC or DC '.
  • small slot denotes a disturbing slot FP of the type presented above with reference to the figure 14 .
  • F1 to F4 disruptive slots having only a single PT bridge or PE beam MEMS device, but it is nevertheless preferable to use small F1 disruptive slots.
  • a metallized hole (e) TM (electromagnetic) makes it possible to electrically couple the upper pad PS and the lower ground plane PM1 in a central portion located between the four small disturbing slots F1 to F4, of length quarter wave.
  • This metallized hole MT is intended to supply DC power to the upper pad PS so as to bias the MEMS device.
  • the power supply of the upper block PS is carried out by means of at least one metallized hole TM. But, alternatively this power can be performed by means of a quarter-wave line with high impedance.
  • phase shifter cell CD comprising a substrate SB having a rear face (or lower), secured to a lower ground plane PM1, and a front face (or upper), secured to a higher ground plane defining a patch (or patch) upper PS 'rectangular shape.
  • the upper pavement PS 'and the lower ground plane PM1 constitute a short-circuited cobblestone structure which defines a resonant planar structure. It is important to note that the length of the upper PS block is chosen so that it is resonant at ⁇ / 4.
  • the substrate SB is for example made of Duroid or TMM and has a thickness of weak, typically of the order of ⁇ / 10 to ⁇ / 5, where ⁇ is the wavelength in the vacuum of the waves to be reflected, from the source of the antenna.
  • the upper pavement PS ' is placed substantially parallel to the lower mass plane PM1 and has dimensions much smaller than its own at least in one direction.
  • the lower ground plane PM1 comprises at least one small conductive "pellet" PI, isolated from its own conductive part by a non-conductive zone Z, made for example by etching.
  • Each small conductive pad P1 is electrically connected to the upper pad PS 'via a metallized hole (or traverse) TM.
  • each small conductive pad P1 is preferably of rectangular shape, and more preferably square.
  • Each metallized hole TM is connected to the upper pavement PS 'in a chosen location, the various locations being preferably substantially aligned along a line parallel to the longitudinal sides of said upper pavement PS.
  • each small conductive pad PI is provided with a MEMS device with a PT bridge or with a PE beam (as illustrated on FIG. figure 18 ), of the type described above.
  • Each MEMS device DC '(or DC) is intended to establish an electrical connection between its small lower block P1 and the conductive part of the lower ground plane PM1, when it is placed in its first state (bent).
  • the metallized hole TM which is connected to its small conductive pad P1 bypasses the upper pad PS' substantially to the place where it is connected, which has the effect of varying its characteristic resonant length (or electrical length) and thus the phase shift of the reflected wave.
  • This structure is advantageous because its devices being placed on the rear face they are more protected from radiation.
  • five metallized holes TM can define five short circuits corresponding to at least six different resonant lengths for the upper pad PS '. Consequently, by separately controlling the different MEMS devices DC '(or DC), it is possible to obtain several different phase shifts of the wave reflected by the phase-shifter cell CD.
  • phase-shifting cell CD may comprise a number of MEMS devices (DC or DC ') different from five, since this is at least one.
  • the number of MEMS devices used depends on the number of phase states that one wishes to obtain.
  • the sum of the length of the "active" dipole (that is to say between the short circuit and the other end of the dipole) and the length of the short-circuit must be equal to one quarter of the wavelength of the guided mode ⁇ g .
  • This exemplary embodiment can allow the constitution of a linear double polarization phase shifter cell, of the type of that illustrated on FIG. figure 9 . To do this, it is necessary to combine "horizontal" dipoles and “vertical” dipoles of the type described above with reference to the Figures 16 to 18 .
  • This exemplary embodiment constitutes, as it were, an intermediate structure between the exemplary embodiments illustrated on the Figures 5 to 8 and the exemplary embodiments illustrated on the Figures 10 to 12 .
  • the phase-shifter cell CD comprises a substrate SB having a rear face (or bottom), secured to a lower ground plane PM1, and a front face (or upper), secured to an upper pad PS.
  • the substrate SB is for example made of Duroid or TMM and has a thickness d equal to ⁇ / 4, where ⁇ is the wavelength in the vacuum of the waves to be reflected from the antenna source.
  • the substrate SB is traversed, on its periphery, by holes (or traverses) metallized (e) TM connected to the lower ground plane PM1 and surrounding the upper pad PS to define a resonant cavity.
  • the upper pad PS is a square of length between about 15 mm and about 17 mm.
  • the upper block PS comprises at least two (here five) radiating slots each comprising a single MEMS device (DC or DC ') PT bridge or PE beam.
  • the number N of slots radiating illustrated is not limiting. It can take any value greater than or equal to two.
  • the slits have a long side length of about 5 mm to about 7 mm, and a small side of width of about 0.3 mm to about 0.7 mm.
  • the radiating slots have, for some, different lengths. More precisely, in the example illustrated, the upper block PS comprises two end radiating slots FR1, having a first characteristic resonant length L1, two intermediate radiating slots FR2, having a second characteristic resonant length L2 greater than L1, and a slot radiating central FR3, having a third characteristic resonant length L3 greater than L2. In one variant, the five slots could have five different lengths.
  • the five radiating slots FR1 to FR3 are substantially centered with respect to the middle of the upper pad PS, and their MEMS DC devices with PT bridge (or DC 'with PE beam) are also installed in a centered position (for example).
  • the slot or slots that one does not wish to use are short-circuited by placing their MEMS DC devices in their first state (bent).
  • the phase variation of the reflected wave is here obtained by selecting one of the combinations of short-circuited and non-short-circuited slots.
  • Each combination corresponds in fact to a particular and discrete phase shift mainly function of the ratio between the smallest characteristic resonant length and the greatest characteristic resonant length.
  • Each slot short-circuited in the middle acts as a parasitic element for the neighboring non-shorted slot. Therefore, it is likely to improve the bandwidth of the non-shorted slot.
  • Some holes (or crossings) metallized (e) TM can be advantageously used to route the voltage commands at different MEMS devices DC or DC '.
  • each slot of half-wave length is constituted by two half-slots of quarter-wave length.
  • MEMS devices DC or DC ' were deliberately omitted so as not to overload the drawings.
  • two upper blocks PS1 and PS2 are placed substantially parallel to the lower ground plane PM1 and at a distance therefrom. These two upper blocks PS1 and PS2 are spaced from each other by a distance chosen so as to define between them a capacitive area. They have different shapes and each have a half quarter wave slot FR1, FR2. These two half slots FR1 and FR2 together constitute a half-wave slot and an inductive zone whose effect is advantageously compensated (at least partially) by the capacitive inter-pad area.
  • the blocks have a width equal to about 3.7 mm and are separated by a distance, forming a slot, equal to about 0.1 mm.
  • Such an asymmetrical structure provides a good stability frequency response due to an effective coupling between the two resonances.
  • three upper blocks PS1, PS2 and PS3 are placed substantially parallel to the lower ground plane PM1 and at a distance therefrom.
  • the two upper blocks PS1 and PS3 are substantially identical and surround the PS2 pad.
  • the two upper blocks PS1 and PS3 each have a half quarter wave slot FR1, FR4, while the upper block PS2 has two half quarter wave slots FR2 and FR3 opening on two opposite sides, one placed next to the half slot FR1 of the upper block PS1 and defining with it a first half wave slot, and the other placed next to the half slot FR4 of the upper pad PS3 and defining with it a second half wave slot.
  • Such a symmetrical structure also offers a frequency response of good stability due to an effective coupling between the resonances.
  • phase-shifting cells which comprise at least one block provided with at least one slot FP, described above, one or more auxiliary blocks and at least one MEMS device. coupling, so as to vary the size of the tile in at least one of its two directions (X and Y), and preferably along its length X which is parallel to the direction defining the length b (or long side) of FP slots.
  • a CD phase shifter cell of this type is illustrated on the figure 23 .
  • a substrate SB having a rear face (or lower), secured to a lower ground plane PM1, and a front face (or upper), secured to at least one PS pad and at least one auxiliary block PA1, PA2.
  • two auxiliary blocks PA1 and PA2 placed on both sides of two parallel sides of the PS pad (themselves parallel to the long sides (Y) of the slot FP).
  • Y long sides
  • the upper blocks PS, PA1 and PA2 and the lower ground plane PM1 define a resonant planar structure.
  • the phase-shifter cell CD also comprises at least one DC or DC coupling device MEMS installed between the pad PS and an auxiliary pad PA1, PA2 and responsible for establishing or not a contact between these blocks according to the state in which it is placed.
  • the PS block may be connected to each auxiliary pad PA1, PA2 via three MEMS devices DC ', a central and two end.
  • the two end MEMS devices DC ' are preferably placed symmetrically with respect to the center of the auxiliary pad PA1, PA2.
  • the different DC or DC MEMS devices which connect the PS block to one of the auxiliary blocks PA1, PA2 are preferably controlled by the same control current. In other words, they are preferably placed simultaneously in the same state so as to ensure either an electrical connection or an absence of electrical connection, between the PS block and the auxiliary block PA1, PA2 concerned.
  • the physical length (following X) of the PS pad can be increased.
  • the phase shift torque of the incident wave can be increased.
  • the possibility of controlling the dispersion of this phase shift in frequency is particularly interesting to compensate for the dispersive illumination in frequency of a planar reflector grating by a primary source.
  • auxiliary blocks may be placed parallel to each other, on at least one of the two sides of the PS pad, the blocks being connected in pairs by one or more coupling devices MEMS DC 'or DC, and preferably three. This makes it possible to further vary the physical length of the PS block, as needed, by playing on the respective states of the MEMS devices DC 'or DC coupling the auxiliary blocks.
  • auxiliary blocks which are located on either side of the two parallel sides of the PS pad do not necessarily have the same dimensions. This is particularly the case in the example illustrated on the figure 23 , where the auxiliary pad PA1 has a length (in the X direction) greater than that of the auxiliary pad PA2, but a width (in the Y direction) substantially identical to that of the auxiliary pad PA2.
  • the length of the keypad PS is equal to L
  • the lengths of the auxiliary keypads PA1 and PA2 can be respectively equal to L / 2 and L / 3.
  • the PS block may comprise one or more MEMS devices DC or DC '.
  • the number of MEMS devices used depends on the number of phase shift states that it is desired to obtain.
  • phase-shifting cell CD therefore makes it possible to dynamically vary, as needed, the phase shift and the phase-to-frequency dispersion, which is particularly advantageous for an active (or reconfigurable) antenna.
  • the choice of phase shift and dispersion the phase shift is in fact fixed by the physical length of the PS pad and by the electrical length of each slot FP of each pad PS, according to the respective states of the different MEMS devices used.
  • MEMS devices can be omitted at the slots. More specifically, as illustrated in Figures 24 and 25 , one can use a structure of the type of that illustrated on the Figures 10 to 12 , but without MEMS device.
  • Such a structure CD therefore comprises a substrate SB having a rear (or lower) face, secured to a lower ground plane PM1, and a front face (or upper), secured to at least one upper patch (or patch) PS comprising at least one least one FP slot.
  • the upper block PS and the lower ground plane PM1 define a resonant planar structure.
  • the upper block PS By judiciously choosing the dimensions of the upper block PS, and in particular its length x (in the X direction), and the slot FP, and in particular its length b (in the Y direction), as well as the thickness d of the substrate SB, it is possible to impose both a chosen phase shift and a phase dispersion in frequency chosen.
  • the upper block PS When the upper block PS has only one slot FP, it is preferably placed substantially at its center. But, the upper block PS could have several FP slots, possibly of different dimensions.
  • phase-shifting cell CD makes it possible to obtain any phase shift, and in particular phase shifts (very) greater than 360 °. It also makes it possible to control the dispersion of this phase shift in frequency.
  • the phase-shifting cells of the prior art which make it possible to obtain such characteristics, comprise three blocks placed parallel to one another above and above a lower ground plane (they are particular described in the article of JA Encinar et al., 27th ESA Antenna Workshop, Santiago de Compostela, Spain, March 2004, "Design of a three-layer printed reflectarray for dual polarization and dual coverage” ).
  • the phase-shifter cells CD according to the invention comprise only one level of metallization (upper block), in addition to the lower ground plane PM1, and are therefore much simpler to achieve than the phase-shifting cells of the prior art.

Landscapes

  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Waveguide Aerials (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Claims (25)

  1. Phasenverschiebungszelle (CD) für eine Reflektorgruppenantenne, definiert durch eine charakteristische resonante Länge, dadurch gekennzeichnet, dass sie eine planare resonante Struktur mit einem oberen Block (PS) aufweist, der im Wesentlichen parallel zu einer unteren Masseplatte (PM1) in einem gewählten Abstand angeordnet ist, und dass sie an mindestens einer gewählten Stelle mindestens eine mikroelektromechanische Vorrichtung vom Typ MEMS (DC, DC') aufweist, die die charakteristische resonante Länge des oberen Blocks (PS) überwacht, wobei die MEMS-Vorrichtung geeignet ist, um in mindestens zwei unterschiedliche Zustände gebracht zu werden, die den Aufbau eines Kurzschlusses erlauben bzw. verhindern, der dazu bestimmt ist, die resonante Länge variieren zu lassen, um die Phasenverschiebung einer zu reflektierenden Welle zu variieren, die mindestens eine lineare Polarisation aufweist.
  2. Zelle nach Anspruch 1, dadurch gekennzeichnet, dass die MEMS-Vorrichtung (DC) eine flexible leitende Brücke (PT) aufweist, deren Zustände von zwei im Wesentlichen übereinander angeordneten Steuerelektroden gesteuert werden, von denen eine aus der Brücke (PT) besteht.
  3. Zelle nach Anspruch 1, dadurch gekennzeichnet, dass die MEMS-Vorrichtung (DC') einen aufgehängten flexiblen leitenden Balken (PE) aufweist, dessen Zustände von einer Steuerelektrode (EC') gesteuert werden, die unter einem aufgehängten Bereich des Balkens (PE) angeordnet ist, welcher eine andere Elektrode bildet.
  4. Zelle nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass die MEMS-Vorrichtung (DC, DC') in einem Schlitz (FP) angeordnet ist, der sich im oberen Block (PS) befindet.
  5. Zelle nach Anspruch 4, dadurch gekennzeichnet, dass sie einen einzigen Schlitz (FP) aufweist, der mit mindestens zwei MEMS-Vorrichtungen (DC, DC') versehen ist, was es ermöglicht, mindestens drei verschiedene resonante Längen (FP) je nach den Zuständen zu definieren, in die sie gebracht werden.
  6. Zelle nach einem der Ansprüche 4 und 5, dadurch gekennzeichnet, dass sie mindestens einen Hilfsblock (PA1, PA2), der entlang mindestens einer der Seiten des oberen Blocks (PS) in einem gewählten Abstand von diesem angeordnet ist, und mindestens eine MEMS-Kopplungsvorrichtung (DC', DC) aufweist, die zwischen dem Hilfsblock (PA1, PA2) und dem oberen Block (PS) angeordnet ist und es ermöglicht, eine elektrische Verbindung zwischen dem Hilfsblock und dem oberen Block herzustellen oder nicht, je nach dem Zustand, in dem sie sich befindet.
  7. Zelle nach Anspruch 6, dadurch gekennzeichnet, dass sie mindestens zwei zueinander parallele, benachbarte Hilfsblöcke mit im Wesentlichen gleichen Abmessungen und entlang mindestens einer der Seiten des oberen Blocks (PS) angeordnet und mindestens eine MEMS-Kopplungsvorrichtung (DC', DC) aufweist, die zwischen den benachbarten Hilfsblöcken angeordnet ist und es ermöglicht, je nach dem Zustand, in dem sie sich befindet, eine elektrische Verbindung zwischen ihnen herzustellen oder nicht.
  8. Zelle nach Anspruch 4, dadurch gekennzeichnet, dass der obere Block (PS) im Wesentlichen quadratisch ist, und dass sie mindestens einen rechteckigen Schlitz aufweist, der auf einer nicht strahlenden Seite des Quadrats mündet und mindestens zwei MEMS-Vorrichtungen (DC, DC') aufweist, die es ermöglichen, mindestens drei verschiedene resonante Längen zu definieren, je nach den Zuständen, in denen sie sich jeweils befinden.
  9. Zelle nach Anspruch 4, dadurch gekennzeichnet, dass der obere Block (PS) im Wesentlichen quadratisch ist, und dass sie mindestens erste (F1) und zweite rechteckige Schlitze (F2) aufweist, die im Wesentlichen einander gegenüber angeordnet sind und auf zwei nicht strahlenden gegenüberliegenden Seiten des Quadrats münden, wobei jeder Schlitz (F1, F2) mindestens zwei MEMS-Vorrichtungen (DC, DC') aufweist, die es ermöglichen, mindestens drei verschiedene resonante Längen zu definieren, je nach den Zuständen, in denen sie sich befinden.
  10. Zelle nach Anspruch 9, dadurch gekennzeichnet, dass sie mindestens dritte (F3) und vierte rechteckige Schlitze (F4) aufweist, die im Wesentlichen einander gegenüber angeordnet sind und auf zwei anderen gegenüberliegenden Seiten des Quadrats münden, wobei jeder Schlitz (F3, F4) mindestens zwei MEMS-Vorrichtungen (DC, DC') aufweist, die es ermöglichen, mindestens drei weitere verschiedene resonante Längen zu definieren, je nach den Zuständen, in denen sie sich befinden, um eine doppelte lineare Polarisation zu erlauben.
  11. Zelle nach einem der Ansprüche 4 bis 10 in Kombination mit Anspruch 2, dadurch gekennzeichnet, dass jeder Schlitz (FP, Fl-F4) rechteckig ist, und dass jede Brücke (PT) einer MEMS-Vorrichtung (DC) im Wesentlichen parallel zu großen Seiten des Schlitzes angeordnet ist.
  12. Zelle nach einem der Ansprüche 4 bis 10 in Kombination mit Anspruch 3, dadurch gekennzeichnet, dass jeder Schlitz (FP, F1-F4) rechteckig ist, und dass jeder Balken (PE) einer MEMS-Vorrichtung (DC') im Wesentlichen lotrecht zu großen Seiten des Schlitzes angeordnet ist.
  13. Zelle nach einem der Ansprüche 4, 5, 11 und 12, dadurch gekennzeichnet, dass der obere Block (PS) geringere Abmessungen als die Abmessungen der unteren Masseplatte (PM1) hat, und dass sie metallbeschichtete Durchführungen (TM) aufweist, die mit der unteren Masseplatte (PM1) verbunden sind und den oberen Block (PS) umgeben, um einen Resonanzhohlraum zu bilden.
  14. Zelle nach einem der Ansprüche 4 bis 13, dadurch gekennzeichnet, dass die planare resonante Struktur mindestens zwei obere Blöcke (PS1, PS2) aufweist, die einen gewählten Abstand zueinander haben, wobei jeder Block mindestens einen Halbschlitz (FR1, FR2, FR3, FR4), der auf einer seiner Seiten mündet, und zwei gegenüberliegende Halbschlitze aufweist, die einen Schlitz bilden.
  15. Zelle nach einem der Ansprüche 4 bis 13, dadurch gekennzeichnet, dass die planare resonante Struktur mehrere obere Blöcke aufweist, die durch Schlitze ausgewählter Breiten bildende Zwischenräume voneinander entfernt sind, wobei die Blöcke und die Schlitze ein "Jerusalem-Kreuz" bilden.
  16. Zelle nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass sie einerseits eine planare resonante Struktur, die einen rechteckigen oberen Block (PS) enthält, der im Wesentlichen parallel zu einer unteren Masseplatte (PM1) in einem gewählten Abstand angeordnet ist, wobei die untere Masseplatte (PM1) mindestens ein Plättchen (PI) definiert, das insgesamt von einer nicht leitenden Zone (Z) umgeben ist, die unter dem oberen Block (PS) angeordnet ist und deren Abmessungen geringer sind als die Abmessungen dieses Blocks, und andererseits mindestens eine metallbeschichtete Durchführung (TM) aufweist, die den oberen Block (PS) mit dem Plättchen (PI) verbindet, und dass die MEMS-Vorrichtung (DC, DC') in Höhe der Zone (Z) angeordnet ist, um in einem ihrer Zustände eine Verbindung zwischen dem Plättchen (PI) und dem Rest der Masseplatte (PM1) herzustellen, um die resonante Länge des oberen Blocks (PS) zu überwachen.
  17. Zelle nach Anspruch 16, dadurch gekennzeichnet, dass die untere Masseplatte (PM1) mindestens zwei Plättchen (PI) definiert, die insgesamt von einer nicht leitenden Zone (Z) umgeben sind, unter dem oberen Block (PS) angeordnet sind und Abmessungen haben, die unter den Abmessungen des Blocks liegen, und dass sie einerseits mindestens zwei metallbeschichtete Durchführungen (TM), die je den oberen Block (PS) mit einem der Plättchen (PI) verbinden, und andererseits mindestens zwei MEMS-Vorrichtungen (DC, DC') aufweist, die je in Höhe einer der Zonen (ZI) angeordnet sind, um Verbindungen zwischen mindestens einem der Plättchen (PI) und dem Rest der Masseplatte (PM1) herzustellen, wodurch es möglich wird, mindestens drei unterschiedliche resonante Längen des oberen Blocks (PS) zu definieren, je nach den Zuständen, in denen sie sich befinden.
  18. Zelle nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass sie eine obere Masseplatte (PM2), die mindestens einen strahlenden Schlitz (FR) enthält, der mit einer MEMS-Vorrichtung (DC, DC') versehen ist, die seine charakteristische resonante Länge überwacht, eine untere Masseplatte (PM1) und metallbeschichtete Durchführungen (TM) aufweist, die die untere Masseplatte (PM1) mit Umfangsbereichen der oberen Masseplatte (PM2) verbinden, um einen Resonanzhohlraum zu definieren.
  19. Zelle nach Anspruch 18, dadurch gekennzeichnet, dass die obere Masseplatte (PM2) mindestens zwei strahlende Schlitze (FR1, FR2, FR3) aufweist, die je mit einer einzigen MEMS-Vorrichtung (DC, DC') versehen sind, die ihre charakteristische resonante Länge überwacht.
  20. Zelle nach Anspruch 19, dadurch gekennzeichnet, dass jede MEMS-Vorrichtung (DC, DC') sich im Wesentlichen in der Mitte eines strahlenden Schlitzes (FR1, FR2, FR3) befindet.
  21. Zelle nach einem der Ansprüche 19 und 20, dadurch gekennzeichnet, dass die Schlitze (FR1, FR2, FR3) im Wesentlichen parallel zueinander sind und unterschiedliche Längen haben.
  22. Zelle nach Anspruch 18, dadurch gekennzeichnet, dass die obere Masseplatte (PM2) einen strahlenden Schlitz (FR) aufweist, der mit mindestens zwei MEMS-Vorrichtungen (DC, DC') versehen ist, die es ermöglichen, mindestens drei unterschiedliche resonante Schlitzlängen zu definieren, je nach den Zuständen, in denen sie sich jeweils befinden.
  23. Zelle nach einem der Ansprüche 18 bis 22, dadurch gekennzeichnet, dass die obere Masseplatte (PM2) mindestens einen rechteckigen strahlenden Schlitz (FRV), der große Seiten parallel zu einer ersten Richtung hat, und mindestens einen weiteren rechteckigen strahlenden Schlitz (FRV) aufweist, der große Seiten parallel zu einer zweiten Richtung lotrecht zur ersten hat, um eine doppelte lineare Polarisation zu ermöglichen.
  24. Phasenverschiebungszelle (CD) für eine Reflektorgruppenantenne, dadurch gekennzeichnet, dass sie eine planare resonante Struktur aufweist, die einen oberen Block (PS) enthält, der im Wesentlichen parallel zu einer unteren Masseplatte (PM1) in einem gewählten Abstand angeordnet ist, und mindestens einen Schlitz (FP) aufweist, wobei die Abmessungen des Blocks (PS) und des Schlitzes (FP) und der Abstand so gewählt werden, dass eine gewählte Phasenverschiebung und eine gewählte Frequenz-Phasendispersion einer zu reflektierenden Welle auferlegt werden, die mindestens eine lineare Polarisation hat.
  25. Reflektorgruppenantenne, dadurch gekennzeichnet, dass sie mindestens zwei Phasenverschiebungszellen (CD) nach einem der vorhergehenden Ansprüche aufweist.
EP05290642A 2004-03-23 2005-03-23 Phasenschieber mit linearer Polarisation und einer durch mems-Schalter variablen Resonanzlänge Not-in-force EP1580844B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0450575A FR2868216B1 (fr) 2004-03-23 2004-03-23 Cellule dephaseuse a polarisation lineaire et a longueur resonante variable au moyen de commutateurs mems
FR0450575 2004-03-23

Publications (2)

Publication Number Publication Date
EP1580844A1 EP1580844A1 (de) 2005-09-28
EP1580844B1 true EP1580844B1 (de) 2009-06-17

Family

ID=34855227

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05290642A Not-in-force EP1580844B1 (de) 2004-03-23 2005-03-23 Phasenschieber mit linearer Polarisation und einer durch mems-Schalter variablen Resonanzlänge

Country Status (6)

Country Link
US (1) US7358915B2 (de)
EP (1) EP1580844B1 (de)
AT (1) ATE434276T1 (de)
DE (1) DE602005014900D1 (de)
ES (1) ES2327650T3 (de)
FR (1) FR2868216B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9088075B2 (en) 2009-06-09 2015-07-21 Broadcom Corporation Method and system for configuring a leaky wave antenna utilizing micro-electro mechanical systems

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2002511A4 (de) * 2006-03-08 2012-02-29 Wispry Inc Einstellbare impedanzabgleichsnetze und einstellbare diplexer-abgleichssysteme
JP2009535942A (ja) * 2006-04-27 2009-10-01 レイスパン コーポレーション メタマテリアル構造に基づくアンテナ、デバイス、及びシステム
US7741933B2 (en) * 2006-06-30 2010-06-22 The Charles Stark Draper Laboratory, Inc. Electromagnetic composite metamaterial
EP1881557A1 (de) * 2006-07-07 2008-01-23 Fondazione Torino Wireless Antenne, Herstellungsverfahren für eine Antenne und Vorrichtung zur Herstellung einer Antenne
KR101236313B1 (ko) * 2006-08-25 2013-02-22 레이스팬 코포레이션 메타물질 구조물에 기초된 안테나
FR2907262B1 (fr) * 2006-10-13 2009-10-16 Thales Sa Cellule dephaseuse a dephaseur analogique pour antenne de type"reflectarray".
WO2008115881A1 (en) * 2007-03-16 2008-09-25 Rayspan Corporation Metamaterial antenna arrays with radiation pattern shaping and beam switching
US7724180B2 (en) * 2007-05-04 2010-05-25 Toyota Motor Corporation Radar system with an active lens for adjustable field of view
GB0711382D0 (en) * 2007-06-13 2007-07-25 Univ Edinburgh Improvements in and relating to reconfigurable antenna and switching
KR101246173B1 (ko) 2007-10-11 2013-03-21 레이스팬 코포레이션 단일층 금속화 및 비아-레스 메타 물질 구조
US7791552B1 (en) 2007-10-12 2010-09-07 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Cellular reflectarray antenna and method of making same
KR101539441B1 (ko) * 2007-11-13 2015-07-24 타이코 일렉트로닉스 서비시스 게엠베하 다층 금속화층과 비아를 가지는 메타물질 구조
US8674792B2 (en) * 2008-02-07 2014-03-18 Toyota Motor Engineering & Manufacturing North America, Inc. Tunable metamaterials
US20090206963A1 (en) * 2008-02-15 2009-08-20 Toyota Motor Engineering & Manufacturing North America, Inc. Tunable metamaterials using microelectromechanical structures
US8547286B2 (en) * 2008-08-22 2013-10-01 Tyco Electronics Services Gmbh Metamaterial antennas for wideband operations
US7965250B2 (en) * 2008-10-02 2011-06-21 Toyota Motor Engineering & Manufacturing North America, Inc. Microwave lens
FR2936906B1 (fr) * 2008-10-07 2011-11-25 Thales Sa Reseau reflecteur a arrangement optimise et antenne comportant un tel reseau reflecteur
US8212573B2 (en) * 2009-01-15 2012-07-03 The Curators Of The University Of Missouri High frequency analysis of a device under test
US8044874B2 (en) * 2009-02-18 2011-10-25 Harris Corporation Planar antenna having multi-polarization capability and associated methods
US8681050B2 (en) 2010-04-02 2014-03-25 Tyco Electronics Services Gmbh Hollow cell CRLH antenna devices
FR2980044B1 (fr) 2011-09-14 2016-02-26 Thales Sa Cellule dephaseuse rayonnante reconfigurable basee sur des resonances fentes et microrubans complementaires
US9046605B2 (en) 2012-11-05 2015-06-02 The Curators Of The University Of Missouri Three-dimensional holographical imaging
CN103345057B (zh) * 2013-05-31 2016-06-01 华中科技大学 一种微型的桥式结构及其制备方法
CN115149226B (zh) * 2021-03-31 2023-08-25 北京京东方技术开发有限公司 移相器及其制备方法、天线
JPWO2023106238A1 (de) * 2021-12-07 2023-06-15
CN116259962B (zh) * 2023-03-02 2024-08-20 中国人民解放军战略支援部队航天工程大学 一种采用谐振移相结构的反射型超表面单元及其阵列天线

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184839B1 (en) * 1996-12-19 2001-02-06 Lockheed Martin Missiles & Space Company Large instantaneous bandwidth reflector array
US6417807B1 (en) * 2001-04-27 2002-07-09 Hrl Laboratories, Llc Optically controlled RF MEMS switch array for reconfigurable broadband reflective antennas
US6307519B1 (en) * 1999-12-23 2001-10-23 Hughes Electronics Corporation Multiband antenna system using RF micro-electro-mechanical switches, method for transmitting multiband signals, and signal produced therefrom
US6388631B1 (en) * 2001-03-19 2002-05-14 Hrl Laboratories Llc Reconfigurable interleaved phased array antenna
US6864848B2 (en) * 2001-12-27 2005-03-08 Hrl Laboratories, Llc RF MEMs-tuned slot antenna and a method of making same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9088075B2 (en) 2009-06-09 2015-07-21 Broadcom Corporation Method and system for configuring a leaky wave antenna utilizing micro-electro mechanical systems
TWI493791B (zh) * 2009-06-09 2015-07-21 美國博通公司 一種通信方法和通信系統
US9417318B2 (en) 2009-06-09 2016-08-16 Broadcom Corporation Method and system for configuring a leaky wave antenna utilizing micro-electro mechanical systems

Also Published As

Publication number Publication date
FR2868216B1 (fr) 2006-07-21
ATE434276T1 (de) 2009-07-15
DE602005014900D1 (de) 2009-07-30
US7358915B2 (en) 2008-04-15
ES2327650T3 (es) 2009-11-02
US20050212705A1 (en) 2005-09-29
EP1580844A1 (de) 2005-09-28
FR2868216A1 (fr) 2005-09-30

Similar Documents

Publication Publication Date Title
EP1580844B1 (de) Phasenschieber mit linearer Polarisation und einer durch mems-Schalter variablen Resonanzlänge
EP2564466B1 (de) Kompaktes strahlungselement mit hohlraumresonatoren
EP2656438B1 (de) Strahlende zelle mit zwei phasenzuständen für ein sendendes netzwerk
EP3392959B1 (de) Grundzelle eines übertragungsnetzes für eine rekonfigurierbare antenne
EP2571098B1 (de) Rekonfiguerierbare strahlende dephasierende Zelle, die auf Spaltresonanzen und komplementären Mikrostreifen basiert
EP0899814B1 (de) Strahlende Struktur
CA2687161C (fr) Element rayonnant planaire a polarisation duale et antenne reseau comportant un tel element rayonnant
EP2710676B1 (de) Strahlerelement für eine aktive gruppenantenne aus elementarfliesen
FR3039711A1 (fr) Cellule elementaire d'un reseau transmetteur pour une antenne reconfigurable.
EP2047564A1 (de) In der mesch-ebene optimierte kompakte orthomodus-transduktionseinrichtung für eine antenne
EP1519444A1 (de) Rekonfigurierbare Gruppenantenne mit niedrigem Verlust
EP1234356B1 (de) Aktiver hf reflektor unter verwendung von elektronischer strahlschwenkung
EP2637254B1 (de) Flachantenne für Endgerät, das über eine doppelte Kreispolarisierung funktioniert, auf dem Luftweg transportiertes Endgerät und Satellitentelekommunikationssystem, das mindestens eine solche Antenne umfasst
FR2901062A1 (fr) Dispositif rayonnant a cavite(s) resonnante(s) a air a fort rendement de surface, pour une antenne reseau
FR2829300A1 (fr) Antenne a resonateur dielectrique polarisee circulairement
FR3105612A1 (fr) Antenne à cavité résonante compacte
FR2858469A1 (fr) Antenne a cavite resonante, reconfigurable
WO2023218008A1 (fr) Antenne faible profil à balayage electronique bidimensionnel
FR2814594A1 (fr) Reseau reflecteur a capacites de decouplage integrees
FR2815479A1 (fr) Reflecteur hyperfrequence actif a deux polarisations independantes, notamment pour antenne a balayage electronique
EP1231673A1 (de) Mikrowellenreflektorpaneel
FR2914112A1 (fr) Guide d'onde multi-faisceaux a fentes rayonnantes

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR LV MK YU

17P Request for examination filed

Effective date: 20051202

AKX Designation fees paid

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: ALCATEL LUCENT

17Q First examination report despatched

Effective date: 20080620

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: THALES

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: FRENCH

REF Corresponds to:

Ref document number: 602005014900

Country of ref document: DE

Date of ref document: 20090730

Kind code of ref document: P

REG Reference to a national code

Ref country code: SE

Ref legal event code: TRGR

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

REG Reference to a national code

Ref country code: ES

Ref legal event code: FG2A

Ref document number: 2327650

Country of ref document: ES

Kind code of ref document: T3

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

REG Reference to a national code

Ref country code: IE

Ref legal event code: FD4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

Ref country code: IE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20091017

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20091017

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090917

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

26N No opposition filed

Effective date: 20100318

BERE Be: lapsed

Owner name: THALES

Effective date: 20100331

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100331

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090918

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100331

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100331

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100331

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090617

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20091218

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100323

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 12

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 13

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20190311

Year of fee payment: 15

Ref country code: FR

Payment date: 20190305

Year of fee payment: 15

Ref country code: DE

Payment date: 20190312

Year of fee payment: 15

Ref country code: IT

Payment date: 20190326

Year of fee payment: 15

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 20190311

Year of fee payment: 15

Ref country code: TR

Payment date: 20190312

Year of fee payment: 15

Ref country code: NL

Payment date: 20190313

Year of fee payment: 15

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: ES

Payment date: 20190401

Year of fee payment: 15

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602005014900

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: MM

Effective date: 20200401

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200401

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200324

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200331

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201001

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20200323

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200323

REG Reference to a national code

Ref country code: ES

Ref legal event code: FD2A

Effective date: 20210805

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200323

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200324

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200323