EP1570504B1 - Mikromekanischer schalter und verfahren zur herstellung - Google Patents

Mikromekanischer schalter und verfahren zur herstellung Download PDF

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Publication number
EP1570504B1
EP1570504B1 EP03815100A EP03815100A EP1570504B1 EP 1570504 B1 EP1570504 B1 EP 1570504B1 EP 03815100 A EP03815100 A EP 03815100A EP 03815100 A EP03815100 A EP 03815100A EP 1570504 B1 EP1570504 B1 EP 1570504B1
Authority
EP
European Patent Office
Prior art keywords
bridge
conducting element
conducting
substrate
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP03815100A
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English (en)
French (fr)
Other versions
EP1570504A1 (de
Inventor
Pierre-Louis Charvet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication of EP1570504A1 publication Critical patent/EP1570504A1/de
Application granted granted Critical
Publication of EP1570504B1 publication Critical patent/EP1570504B1/de
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Definitions

  • the invention relates to a micromechanical switch, comprising a deformable bridge, connected at its ends to a substrate, and actuating means for deforming the deformable bridge so as to establish an electrical contact between a first conductive element, integral with the substrate and disposed between the bridge and the substrate, and a third conductive element disposed on the substrate at the periphery of the bridge.
  • Micro-mechanical switches often have problems with contact resistances.
  • the contact resistance may fluctuate over time or be too high when the contact is not sufficiently intimate.
  • a known embodiment comprises a deformable bridge and first conductive elements, intended to be connected together, arranged on a substrate between the substrate and the bridge.
  • the bridge has a second conductive element on its underside.
  • the electrical contact between the first conductive elements is established when the bridge is deformed by actuating means so that the second conductive element touches all the first conductive elements.
  • this is a hyperstatic structure (comparable to a four-legged table where a foot is superabundant), i.e. only one of the contacts is intimate and has a low contact resistance while the contact resistances of the other contacts are higher.
  • it would require a very important precision during the manufacture of the switch, which would make the manufacture difficult and expensive.
  • the document WOO2 / 01584 discloses a micro-mechanical switch having a metal bridge, disposed on a substrate and deformable by means of an electrostatic actuator, and a conductive element disposed between the bridge and the substrate.
  • the actuation of the electrostatic actuator causes the deformation of the bridge, so as to establish an electrical contact between the bridge and the conductive element.
  • the bridge can undergo hardening, in use, which can lead to its breaking.
  • the object of the invention is to overcome these drawbacks and, more particularly, to provide a more robust switch, while avoiding problems of hyperstatic structure.
  • the deformable bridge comprises at least a first insulating layer pierced with an orifice, in which is disposed a conductive material projecting from the face lower part of the bridge so as to form a second conductive element, intended to come into contact with the first conductive element during the deformation of the bridge, a conductive line connecting the second conductive element to the third conductive element being disposed on the first insulating layer.
  • the micro-mechanical switch shown in figure 1 is composed of a deformable bridge 1, connected at its ends to a substrate 2, and actuating means 3a and 3b for deforming the deformable bridge 1 so as to establish an electrical contact between first conductive elements 4 (three on the figure 1 ), formed on the substrate 2 between the bridge 1 and the substrate 2, and a second conductive element 5, integral with a lower face of the bridge 1.
  • This switch according to the prior art establishes the electrical contact between the first conductive elements 4 when the actuating means 3 deform the bridge 1.
  • the second conductive element 5 is permanently connected, via a conductive line 6 integral with the bridge 1, to a third conductive element 7 disposed on the substrate 2 at the periphery of the bridge 1.
  • the deformation of the bridge 1 establishes an electrical contact, via the conductive line 6 and the second conductive element 5, between the third conductive element 7 and a first single conductive element 4, arranged with respect to the second conductive element 5.
  • the deformable bridge 1 is constituted by a first insulating layer pierced with an orifice 10, in which is disposed a conductive material projecting from the underside of the bridge 1 so as to form a second conductive element 5, intended to come into contact with the first conductive element during the deformation of the bridge 1.
  • the underside of the bridge 1 is made of insulating material.
  • a conductive line 6 disposed on the first insulating layer connects the second conductive element 5 to the third conductive element 7.
  • the deformable bridge 1 may be formed by a superposition of thin layers.
  • a conductive layer constituting the conductive line 6 and connecting the second conductive element and the third conductive element 7 may be formed on the first insulating layer.
  • the second conductive element 5 and the conductive line 6 may be constituted by the same conductive layer.
  • a second insulating layer 8 may be formed above the conductive line 6.
  • a conductive line 6 connects the second conductive element 5 to two third conductive elements 7, arranged on either side of the bridge 1.
  • the bridge 1 may comprise an insulating layer 8 above the conductive line 6.
  • An insulating layer 9 is preferably arranged between the first conductive element 4 and the substrate 2, the insulating layer 9 having side dimensions smaller than the lateral dimensions of the first conductive element 4, so that the first conductive element 4 is convex. Thanks to the convex shape of the first conductive element 4, the contact between the first conductive element 4 and the second conductive element 5 forms a contact located in the center of the bump.
  • a switch according to the invention has the advantage of being robust and having a single contact, which can be made sufficiently intimate by appropriate actuation. Therefore, the contact resistance is very low.
  • the micro-mechanical switch may be a normally open radio frequency switch, the actuating means 3 comprising an electrostatic actuator.
  • the first conductive element 4 is a radiofrequency line.
  • the actuating means 3 are preferably constituted by electrodes 3a and 3b of an electrostatic actuator.
  • the electrodes 3a may be arranged in the first insulating layer of the bridge 1, as shown in FIG. figure 3 .
  • the electrodes 3a, integral with the bridge 1, are connected to a voltage source.
  • the electrodes 3b formed on the substrate 2, between the deformable bridge 1 and the substrate 2, on either side of the radiofrequency line constituting the first conductive element 4, constitute two ground planes substantially parallel to the radiofrequency line. They fulfill a dual function. On the one hand, the electrodes 3b make it possible to establish an attractive electric force between the electrodes 3a and the electrodes 3b making it possible to deform the bridge 1 when a voltage is applied between the electrodes 3a and 3b. On the other hand, the electrodes 3b serve as a waveguide for the signal transmitted by the radiofrequency line constituting the first conductive element 4.
  • the third conductive elements 7 are constituted by electrical ground planes arranged on the substrate 2 on either side of the deformable bridge 1.
  • the operation of the switch puts the radiofrequency line into contact with the electric ground planes constituting the third conductive elements 7.
  • the electrical signal is then absorbed by the electrical ground.
  • the radiofrequency switch described above represents the advantage of transmitting, in the on state, the radiofrequency signal without any loss of contact.
  • the entire radiofrequency component can be made on the substrate 2 by conventional techniques for manufacturing integrated circuits.
  • the surface of the substrate 2, on which are disposed the third and first conductive elements 4 and 7, must be made of insulating material to avoid a short circuit permanent conductive elements.
  • the insulating material is typically silicon oxide.
  • an insulating layer 9 is deposited on the substrate 2 at the locations of the electrodes 3b and at the location of the first conductive element 4, the insulating layer 9 having side dimensions smaller than the lateral dimensions of the electrodes 3b and the first conductive element 4 respectively.
  • the material of the insulating layer 9 may be, for example, Si 3 N 4 or SiO 2 .
  • the first conductive element 4 and the electrodes 3b can be deposited on the insulating layer 9 by depositing a metal layer, preferably gold.
  • the sacrificial layer may then be deposited above the first conductive element 4 and the electrodes 3b.
  • the material of the sacrificial layer is typically a polymeric material, allowing it to be easily removed after bridge fabrication.
  • a layer of insulating material forming the framework of the bridge 1 is deposited.
  • the insulating material of this layer may for example be Si 3 N 4 or SiO 2 .
  • the electrodes 3a can be produced by a metallic deposit on the insulating layer forming the framework of the bridge 1 and the covering of the electrodes 3a by an additional insulating layer (not shown) intended to isolate the electrodes 3a from the conductive line 6.
  • the orifice 10 is pierced by etching in the insulating layer forming the framework of the bridge 1, in the additional insulating layer and in the sacrificial layer.
  • the second conductive element 5 and the conductive line 6 are then made, preferably simultaneously, by deposition of a metal layer so as to fill the orifice 10 and to form a layer connecting the second conductive element 5 and the third conductive element 7
  • a second insulating layer 8 Si 3 N 4 or SiO 2 .
  • the sacrificial layer is then removed.

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  • Micromachines (AREA)
  • Control Of El Displays (AREA)
  • Manufacture Of Switches (AREA)

Claims (10)

  1. Mikromechanischer Schalter mit einer verformbaren Brücke (1), die an ihren Enden mit einem Substrat (2) verbunden ist, und Aktivierungsmitteln (3), die die verformbare Brücke (1) verformen sollen, um einen elektrischen Kontakt zwischen einem ersten leitenden Element (4), das fest mit dem Substrat (2) verbunden und zwischen der Brücke (1) und dem Substrat (2) angeordnet ist, und einem dritten leitenden Element (7) herzustellen, das am Umfang der Brücke (1) auf dem Substrat (2) angeordnet ist;Schalter, der dadurch gekennzeichnet ist, dass die verformbare Brücke (1) mindestens eine erste Isolierschicht umfasst, die von einer Öffnung (10) durchbrochen ist, in der ein leitendes Material angeordnet ist, dass zur Unterseite der Brücke (1) heraussteht und so ein zweites leitendes Element (5) bildet, das dazu bestimmt ist, bei der Verformung der Brücke (1) mit dem ersten leitenden Element (4) in Kontakt zu kommen, wobei eine leitende Leitung (6) das zweite leitende Element (5) mit dem dritten leitenden Element (7) verbindet, das auf der ersten Isolierschicht angeordnet ist.
  2. Schalter nach Anspruch 1, dadurch gekennzeichnet, dass die Aktivierungsmittel (3) einen elektrostatischen Aktuator umfassen:
  3. Schalter nach Anspruch 2, dadurch gekennzeichnet, dass der elektrostatische Aktuator Elektroden (3a) umfasst, die in der ersten Isolierschicht der Brücke (1) angeordnet sind:
  4. Schalter nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass das erste leitende Element (4) eine Hochfrequenzleitung und das dritte leitende Element (7) eine elektrische Masseebene ist, die auf dem Substrat (1) angeordnet ist.
  5. Schalter nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass zwei Masseebenen auf dem Substrat (2) beidseits der Brücke (1) angeordnet und an das zweite leitende Element (5) gelegt sind , wobei die leitende Leitung (6) das zweite leitende Element (5) an die beiden Masseebenen legt.
  6. Schalter nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die verformbare Brücke (1) mindestens eine leitende Schicht umfasst, welche die leitende Leitung (6) bildet.
  7. Schalter nach Anspruch 6, dadurch gekennzeichnet, dass das zweite leitende Element (5) und die leitende Leitung (6) von ein und derselben leitenden Schicht gebildet werden.
  8. Schalter nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass die verformbare Brücke (1) über der leitenden Leitung (6) mindestens eine zweite Isolierschicht (8) umfasst.
  9. Schalter nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass eine dritte Isolierschicht (9) zwischen dem ersten leitenden Element (4) und dem Substrat (2) angeordnet ist, wobei die seitlichen Abmessungen der dritten Isolierschicht niedriger sind als die seitlichen Abmessungen des ersten leitenden Elements (4), sodass das erste leitende Element (4) konvex ist.
  10. Verfahren zur Herstellung eines mikromechanischen Schalters nach einem der Ansprüche 1 bis 9, dadurch gekennzeichnet, dass es umfasst:
    - Herstellung der verformbaren Brücke (1) durch Aufbringen einer Opferschicht über dem ersten leitenden Element (4) erfolgt
    - Aufbringen einer ersten Isolierschicht auf die Opferschicht,
    - Ätzen einer Öffnung (10) in die erste Isolierschicht und in die Opferschicht,
    - Aufbringen einer Metallschicht zum Füllen der Öffnung (10) und Bilden des zweiten leitenden Elements (5) und der leitenden Leitung (6),
    - Entfernen der Opferschicht.
EP03815100A 2002-12-10 2003-12-09 Mikromekanischer schalter und verfahren zur herstellung Expired - Lifetime EP1570504B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0215605 2002-12-10
FR0215605A FR2848331B1 (fr) 2002-12-10 2002-12-10 Commutateur micro-mecanique et procede de realisation
PCT/FR2003/003641 WO2004064096A1 (fr) 2002-12-10 2003-12-09 Commutateur micro-mecanique et procede de realisation

Publications (2)

Publication Number Publication Date
EP1570504A1 EP1570504A1 (de) 2005-09-07
EP1570504B1 true EP1570504B1 (de) 2011-08-24

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Application Number Title Priority Date Filing Date
EP03815100A Expired - Lifetime EP1570504B1 (de) 2002-12-10 2003-12-09 Mikromekanischer schalter und verfahren zur herstellung

Country Status (5)

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US (1) US7382218B2 (de)
EP (1) EP1570504B1 (de)
AT (1) ATE521977T1 (de)
FR (1) FR2848331B1 (de)
WO (1) WO2004064096A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2876995B1 (fr) * 2004-10-26 2007-05-04 Commissariat Energie Atomique Microsysteme comportant un pont deformable
JP4234737B2 (ja) * 2006-07-24 2009-03-04 株式会社東芝 Ｍｅｍｓスイッチ
US8450902B2 (en) * 2006-08-28 2013-05-28 Xerox Corporation Electrostatic actuator device having multiple gap heights
KR100837741B1 (ko) * 2006-12-29 2008-06-13 삼성전자주식회사 미세 스위치 소자 및 미세 스위치 소자의 제조방법
JP4334581B2 (ja) * 2007-04-27 2009-09-30 株式会社東芝 静電型アクチュエータ
US7902946B2 (en) * 2008-07-11 2011-03-08 National Semiconductor Corporation MEMS relay with a flux path that is decoupled from an electrical path through the switch and a suspension structure that is independent of the core structure and a method of forming the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6046659A (en) * 1998-05-15 2000-04-04 Hughes Electronics Corporation Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
WO2002001584A1 (en) * 2000-06-28 2002-01-03 The Regents Of The University Of California Capacitive microelectromechanical switches
JP2005500655A (ja) * 2001-08-20 2005-01-06 ハネウェル・インターナショナル・インコーポレーテッド スナップアクション式熱スイッチ
US6876282B2 (en) * 2002-05-17 2005-04-05 International Business Machines Corporation Micro-electro-mechanical RF switch
JP4447940B2 (ja) * 2004-02-27 2010-04-07 富士通株式会社 マイクロスイッチング素子製造方法およびマイクロスイッチング素子

Also Published As

Publication number Publication date
EP1570504A1 (de) 2005-09-07
FR2848331B1 (fr) 2005-03-11
ATE521977T1 (de) 2011-09-15
US20050280974A1 (en) 2005-12-22
US7382218B2 (en) 2008-06-03
FR2848331A1 (fr) 2004-06-11
WO2004064096A1 (fr) 2004-07-29

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