EP1570504B1 - Micro-mechanical switch and method for making same - Google Patents

Micro-mechanical switch and method for making same Download PDF

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Publication number
EP1570504B1
EP1570504B1 EP03815100A EP03815100A EP1570504B1 EP 1570504 B1 EP1570504 B1 EP 1570504B1 EP 03815100 A EP03815100 A EP 03815100A EP 03815100 A EP03815100 A EP 03815100A EP 1570504 B1 EP1570504 B1 EP 1570504B1
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EP
European Patent Office
Prior art keywords
bridge
conducting element
conducting
substrate
insulating layer
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EP03815100A
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German (de)
French (fr)
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EP1570504A1 (en
Inventor
Pierre-Louis Charvet
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Definitions

  • the invention relates to a micromechanical switch, comprising a deformable bridge, connected at its ends to a substrate, and actuating means for deforming the deformable bridge so as to establish an electrical contact between a first conductive element, integral with the substrate and disposed between the bridge and the substrate, and a third conductive element disposed on the substrate at the periphery of the bridge.
  • Micro-mechanical switches often have problems with contact resistances.
  • the contact resistance may fluctuate over time or be too high when the contact is not sufficiently intimate.
  • a known embodiment comprises a deformable bridge and first conductive elements, intended to be connected together, arranged on a substrate between the substrate and the bridge.
  • the bridge has a second conductive element on its underside.
  • the electrical contact between the first conductive elements is established when the bridge is deformed by actuating means so that the second conductive element touches all the first conductive elements.
  • this is a hyperstatic structure (comparable to a four-legged table where a foot is superabundant), i.e. only one of the contacts is intimate and has a low contact resistance while the contact resistances of the other contacts are higher.
  • it would require a very important precision during the manufacture of the switch, which would make the manufacture difficult and expensive.
  • the document WOO2 / 01584 discloses a micro-mechanical switch having a metal bridge, disposed on a substrate and deformable by means of an electrostatic actuator, and a conductive element disposed between the bridge and the substrate.
  • the actuation of the electrostatic actuator causes the deformation of the bridge, so as to establish an electrical contact between the bridge and the conductive element.
  • the bridge can undergo hardening, in use, which can lead to its breaking.
  • the object of the invention is to overcome these drawbacks and, more particularly, to provide a more robust switch, while avoiding problems of hyperstatic structure.
  • the deformable bridge comprises at least a first insulating layer pierced with an orifice, in which is disposed a conductive material projecting from the face lower part of the bridge so as to form a second conductive element, intended to come into contact with the first conductive element during the deformation of the bridge, a conductive line connecting the second conductive element to the third conductive element being disposed on the first insulating layer.
  • the micro-mechanical switch shown in figure 1 is composed of a deformable bridge 1, connected at its ends to a substrate 2, and actuating means 3a and 3b for deforming the deformable bridge 1 so as to establish an electrical contact between first conductive elements 4 (three on the figure 1 ), formed on the substrate 2 between the bridge 1 and the substrate 2, and a second conductive element 5, integral with a lower face of the bridge 1.
  • This switch according to the prior art establishes the electrical contact between the first conductive elements 4 when the actuating means 3 deform the bridge 1.
  • the second conductive element 5 is permanently connected, via a conductive line 6 integral with the bridge 1, to a third conductive element 7 disposed on the substrate 2 at the periphery of the bridge 1.
  • the deformation of the bridge 1 establishes an electrical contact, via the conductive line 6 and the second conductive element 5, between the third conductive element 7 and a first single conductive element 4, arranged with respect to the second conductive element 5.
  • the deformable bridge 1 is constituted by a first insulating layer pierced with an orifice 10, in which is disposed a conductive material projecting from the underside of the bridge 1 so as to form a second conductive element 5, intended to come into contact with the first conductive element during the deformation of the bridge 1.
  • the underside of the bridge 1 is made of insulating material.
  • a conductive line 6 disposed on the first insulating layer connects the second conductive element 5 to the third conductive element 7.
  • the deformable bridge 1 may be formed by a superposition of thin layers.
  • a conductive layer constituting the conductive line 6 and connecting the second conductive element and the third conductive element 7 may be formed on the first insulating layer.
  • the second conductive element 5 and the conductive line 6 may be constituted by the same conductive layer.
  • a second insulating layer 8 may be formed above the conductive line 6.
  • a conductive line 6 connects the second conductive element 5 to two third conductive elements 7, arranged on either side of the bridge 1.
  • the bridge 1 may comprise an insulating layer 8 above the conductive line 6.
  • An insulating layer 9 is preferably arranged between the first conductive element 4 and the substrate 2, the insulating layer 9 having side dimensions smaller than the lateral dimensions of the first conductive element 4, so that the first conductive element 4 is convex. Thanks to the convex shape of the first conductive element 4, the contact between the first conductive element 4 and the second conductive element 5 forms a contact located in the center of the bump.
  • a switch according to the invention has the advantage of being robust and having a single contact, which can be made sufficiently intimate by appropriate actuation. Therefore, the contact resistance is very low.
  • the micro-mechanical switch may be a normally open radio frequency switch, the actuating means 3 comprising an electrostatic actuator.
  • the first conductive element 4 is a radiofrequency line.
  • the actuating means 3 are preferably constituted by electrodes 3a and 3b of an electrostatic actuator.
  • the electrodes 3a may be arranged in the first insulating layer of the bridge 1, as shown in FIG. figure 3 .
  • the electrodes 3a, integral with the bridge 1, are connected to a voltage source.
  • the electrodes 3b formed on the substrate 2, between the deformable bridge 1 and the substrate 2, on either side of the radiofrequency line constituting the first conductive element 4, constitute two ground planes substantially parallel to the radiofrequency line. They fulfill a dual function. On the one hand, the electrodes 3b make it possible to establish an attractive electric force between the electrodes 3a and the electrodes 3b making it possible to deform the bridge 1 when a voltage is applied between the electrodes 3a and 3b. On the other hand, the electrodes 3b serve as a waveguide for the signal transmitted by the radiofrequency line constituting the first conductive element 4.
  • the third conductive elements 7 are constituted by electrical ground planes arranged on the substrate 2 on either side of the deformable bridge 1.
  • the operation of the switch puts the radiofrequency line into contact with the electric ground planes constituting the third conductive elements 7.
  • the electrical signal is then absorbed by the electrical ground.
  • the radiofrequency switch described above represents the advantage of transmitting, in the on state, the radiofrequency signal without any loss of contact.
  • the entire radiofrequency component can be made on the substrate 2 by conventional techniques for manufacturing integrated circuits.
  • the surface of the substrate 2, on which are disposed the third and first conductive elements 4 and 7, must be made of insulating material to avoid a short circuit permanent conductive elements.
  • the insulating material is typically silicon oxide.
  • an insulating layer 9 is deposited on the substrate 2 at the locations of the electrodes 3b and at the location of the first conductive element 4, the insulating layer 9 having side dimensions smaller than the lateral dimensions of the electrodes 3b and the first conductive element 4 respectively.
  • the material of the insulating layer 9 may be, for example, Si 3 N 4 or SiO 2 .
  • the first conductive element 4 and the electrodes 3b can be deposited on the insulating layer 9 by depositing a metal layer, preferably gold.
  • the sacrificial layer may then be deposited above the first conductive element 4 and the electrodes 3b.
  • the material of the sacrificial layer is typically a polymeric material, allowing it to be easily removed after bridge fabrication.
  • a layer of insulating material forming the framework of the bridge 1 is deposited.
  • the insulating material of this layer may for example be Si 3 N 4 or SiO 2 .
  • the electrodes 3a can be produced by a metallic deposit on the insulating layer forming the framework of the bridge 1 and the covering of the electrodes 3a by an additional insulating layer (not shown) intended to isolate the electrodes 3a from the conductive line 6.
  • the orifice 10 is pierced by etching in the insulating layer forming the framework of the bridge 1, in the additional insulating layer and in the sacrificial layer.
  • the second conductive element 5 and the conductive line 6 are then made, preferably simultaneously, by deposition of a metal layer so as to fill the orifice 10 and to form a layer connecting the second conductive element 5 and the third conductive element 7
  • a second insulating layer 8 Si 3 N 4 or SiO 2 .
  • the sacrificial layer is then removed.

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  • Micromachines (AREA)
  • Manufacture Of Switches (AREA)
  • Control Of El Displays (AREA)

Abstract

The micro mechanical switch has a deformable bridge (1) attached at its ends to a substrate (2). A drive means deforms the bridge and makes contact with a conductor element (4) on the substrate and a second conductor element (15) on the bridge. The second conductor element is connected permanently by a contact line (6) on the bridge to a third conductor element (7) at the bridge end on the substrate.

Description

Domaine technique de l'inventionTechnical field of the invention

L'invention concerne un commutateur micro-mécanique, comportant un pont déformable, rattaché par ses extrémités à un substrat, et des moyens d'actionnement destinés à déformer le pont déformable de manière à établir un contact électrique entre un premier élément conducteur, solidaire du substrat et disposé entre le pont et le substrat, et un troisième élément conducteur disposé sur le substrat à la périphérie du pont.The invention relates to a micromechanical switch, comprising a deformable bridge, connected at its ends to a substrate, and actuating means for deforming the deformable bridge so as to establish an electrical contact between a first conductive element, integral with the substrate and disposed between the bridge and the substrate, and a third conductive element disposed on the substrate at the periphery of the bridge.

État de la techniqueState of the art

Les commutateurs micro-mécaniques présentent souvent des problèmes concernant les résistances de contact. Par exemple, la résistance de contact peut fluctuer dans le temps ou être trop élevée lorsque le contact n'est pas suffisamment intime.Micro-mechanical switches often have problems with contact resistances. For example, the contact resistance may fluctuate over time or be too high when the contact is not sufficiently intimate.

Pour commuter un signal radiofréquence avec un interrupteur micro-mécanique, une réalisation connue comporte un pont déformable et des premiers éléments conducteurs, destinés à être connectés entre eux, disposés sur un substrat entre le substrat et le pont. Le pont comporte un deuxième élément conducteur à sa face inférieure. Le contact électrique entre les premiers éléments conducteurs est établi lorsque le pont est déformé par des moyens d'actionnement de manière à ce que le deuxième élément conducteur touche tous les premiers éléments conducteurs. Or, ceci constitue une structure hyperstatique (comparable à une table à quatre pieds où un pied est surabondant), c'est-à-dire qu'un seul des contacts est intime et présente une faible résistance de contact tandis que les résistances de contact des autres contacts sont plus élevées. Pour assurer que les résistances de contacts des différents contacts électriques soient sensiblement égales, il faudrait une précision très importante lors de la fabrication du commutateur, ce qui rendrait la fabrication difficile et coûteuse.To switch a radiofrequency signal with a micromechanical switch, a known embodiment comprises a deformable bridge and first conductive elements, intended to be connected together, arranged on a substrate between the substrate and the bridge. The bridge has a second conductive element on its underside. The electrical contact between the first conductive elements is established when the bridge is deformed by actuating means so that the second conductive element touches all the first conductive elements. However, this is a hyperstatic structure (comparable to a four-legged table where a foot is superabundant), i.e. only one of the contacts is intimate and has a low contact resistance while the contact resistances of the other contacts are higher. To ensure that the contact resistances of the different electrical contacts are substantially equal, it would require a very important precision during the manufacture of the switch, which would make the manufacture difficult and expensive.

Le document WOO2/01584 décrit un commutateur micro-mécanique comportant un pont métallique, disposé sur un substrat et déformable au moyen d'un actionneur électrostatique, et un élément conducteur disposé entre le pont et le substrat. L'actionnement de l'actionneur électrostatique provoque la déformation du pont, de manière à établir un contact électrique entre le pont et l'élément conducteur. Le pont peut subir un écrouissage, à l'usage, qui peut conduire à sa rupture.The document WOO2 / 01584 discloses a micro-mechanical switch having a metal bridge, disposed on a substrate and deformable by means of an electrostatic actuator, and a conductive element disposed between the bridge and the substrate. The actuation of the electrostatic actuator causes the deformation of the bridge, so as to establish an electrical contact between the bridge and the conductive element. The bridge can undergo hardening, in use, which can lead to its breaking.

Objet de l'inventionObject of the invention

L'invention a pour but de remédier à ces inconvénients et, plus particulièrement, de réaliser un commutateur plus robuste, tout en évitant les problèmes de structure hyperstatique.The object of the invention is to overcome these drawbacks and, more particularly, to provide a more robust switch, while avoiding problems of hyperstatic structure.

Selon l'invention, ce but est atteint par les revendications annexées et, en particulier, par le fait que le pont déformable comporte au moins une première couche isolante percée d'un orifice, dans lequel est disposé un matériau conducteur faisant saillie à la face inférieure du pont de manière à former un deuxième élément conducteur, destiné à venir en contact avec le premier élément conducteur lors de la déformation du pont, une ligne conductrice connectant le deuxième élément conducteur au troisième élément conducteur étant disposée sur la première couche isolante.According to the invention, this object is achieved by the appended claims and, in particular, by the fact that the deformable bridge comprises at least a first insulating layer pierced with an orifice, in which is disposed a conductive material projecting from the face lower part of the bridge so as to form a second conductive element, intended to come into contact with the first conductive element during the deformation of the bridge, a conductive line connecting the second conductive element to the third conductive element being disposed on the first insulating layer.

L'invention concerne également un procédé de réalisation d'un commutateur selon l'invention, dans lequel la fabrication du pont déformable est réalisée par :

  • dépôt d'une couche sacrificielle au-dessus du premier élément conducteur,
  • dépôt d'une première couche isolante sur la couche sacrificielle,
  • gravure d'un orifice dans la première couche isolante et dans la couche sacrificielle,
  • dépôt d'une couche métallique de manière à remplir l'orifice et à former le deuxième élément conducteur et la ligne conductrice,
  • enlèvement de la couche sacrificielle.
The invention also relates to a method for producing a switch according to the invention, in which the manufacture of the deformable bridge is carried out by:
  • depositing a sacrificial layer above the first conductive element,
  • depositing a first insulating layer on the sacrificial layer,
  • etching an orifice in the first insulating layer and in the sacrificial layer,
  • depositing a metal layer so as to fill the orifice and to form the second conductive element and the conductive line,
  • removal of the sacrificial layer.

Description sommaire des dessinsBrief description of the drawings

D'autres avantages et caractéristiques ressortiront plus clairement de la description qui va suivre de modes particuliers de réalisation de l'invention donnés à titre d'exemples non limitatifs et représentés aux dessins annexés, dans lesquels :

  • La figure 1 représente un commutateur micro-mécanique selon l'art antérieur.
  • La figure 2 représente un commutateur micro-mécanique selon l'invention.
  • La figure 3 représente un mode de réalisation préférentiel d'un commutateur micro-mécanique selon l'invention.
  • La figure 4 représente une vue de dessus d'un mode de réalisation d'un commutateur selon l'invention.
Other advantages and features will emerge more clearly from the following description of particular embodiments of the invention given by way of non-limiting example and represented in the accompanying drawings, in which:
  • The figure 1 represents a micromechanical switch according to the prior art.
  • The figure 2 represents a micromechanical switch according to the invention.
  • The figure 3 represents a preferred embodiment of a micromechanical switch according to the invention.
  • The figure 4 represents a top view of an embodiment of a switch according to the invention.

Description de modes particuliers de réalisation.Description of particular embodiments.

Le commutateur micro-mécanique représenté à la figure 1 est composé d'un pont déformable 1, rattaché par ses extrémités à un substrat 2, et des moyens d'actionnement 3a et 3b destinés à déformer le pont déformable 1 de manière à établir un contact électrique entre des premiers éléments conducteurs 4 (trois sur la figure 1), formés sur le substrat 2 entre le pont 1 et le substrat 2, et un deuxième élément conducteur 5, solidaire d'une face inférieure du pont 1. Ce commutateur selon l'art antérieur établit le contact électrique entre les premiers éléments conducteurs 4 lorsque les moyens d'actionnement 3 déforment le pont 1.The micro-mechanical switch shown in figure 1 is composed of a deformable bridge 1, connected at its ends to a substrate 2, and actuating means 3a and 3b for deforming the deformable bridge 1 so as to establish an electrical contact between first conductive elements 4 (three on the figure 1 ), formed on the substrate 2 between the bridge 1 and the substrate 2, and a second conductive element 5, integral with a lower face of the bridge 1. This switch according to the prior art establishes the electrical contact between the first conductive elements 4 when the actuating means 3 deform the bridge 1.

Dans le commutateur micro-mécanique représenté à la figure 2, le deuxième élément conducteur 5 est connecté en permanence, par l'intermédiaire d'une ligne conductrice 6 solidaire du pont 1, à un troisième élément conducteur 7 disposé sur le substrat 2 à la périphérie du pont 1. La déformation du pont 1 établit un contact électrique, par l'intermédiaire de la ligne conductrice 6 et du deuxième élément conducteur 5, entre le troisième élément conducteur 7 et un premier élément conducteur 4 unique, disposé vis-à-vis du deuxième élément conducteur 5.In the micro-mechanical switch shown at figure 2 , the second conductive element 5 is permanently connected, via a conductive line 6 integral with the bridge 1, to a third conductive element 7 disposed on the substrate 2 at the periphery of the bridge 1. The deformation of the bridge 1 establishes an electrical contact, via the conductive line 6 and the second conductive element 5, between the third conductive element 7 and a first single conductive element 4, arranged with respect to the second conductive element 5.

Sur la figure 2, le pont 1 déformable est constitué par une première couche isolante percée d'un orifice 10, dans lequel est disposé un matériau conducteur faisant saillie à la face inférieure du pont 1 de manière à former un deuxième élément conducteur 5, destiné à venir en contact avec le premier élément conducteur lors de la déformation du pont 1. Ainsi, la face inférieure du pont 1 est en matériau isolant. Une ligne conductrice 6, disposée sur la première couche isolante, connecte le deuxième élément conducteur 5 au troisième élément conducteur 7.On the figure 2 , the deformable bridge 1 is constituted by a first insulating layer pierced with an orifice 10, in which is disposed a conductive material projecting from the underside of the bridge 1 so as to form a second conductive element 5, intended to come into contact with the first conductive element during the deformation of the bridge 1. Thus, the underside of the bridge 1 is made of insulating material. A conductive line 6 disposed on the first insulating layer connects the second conductive element 5 to the third conductive element 7.

Le pont déformable 1 peut être formé par une superposition de couches minces. Ainsi, une couche conductrice, constituant la ligne conductrice 6 et reliant le deuxième élément 5 conducteur et le troisième élément 7 conducteur, peut être formée sur la première couche isolante. Dans une variante de réalisation, le deuxième élément conducteur 5 et la ligne conductrice 6 peuvent être constitués par une même couche conductrice. Comme représenté à la figure 3, une deuxième couche isolante 8 peut être formée au-dessus de la ligne conductrice 6.The deformable bridge 1 may be formed by a superposition of thin layers. Thus, a conductive layer constituting the conductive line 6 and connecting the second conductive element and the third conductive element 7 may be formed on the first insulating layer. In an alternative embodiment, the second conductive element 5 and the conductive line 6 may be constituted by the same conductive layer. As represented in figure 3 a second insulating layer 8 may be formed above the conductive line 6.

Dans le commutateur représenté à la figure 3, une ligne conductrice 6 relie le deuxième élément conducteur 5 à deux troisièmes éléments conducteurs 7, disposés de part et d'autre du pont 1. Le pont 1 peut comporter une couche isolante 8 au-dessus de la ligne conductrice 6. Une couche isolante 9 est, de préférence, disposée entre le premier élément conducteur 4 et le substrat 2, la couche isolante 9 ayant des dimensions latérales inférieures aux dimensions latérales du premier élément conducteur 4, de manière à ce que le premier élément 4 conducteur soit convexe. Grâce à la forme convexe du premier élément conducteur 4, le contact entre le premier élément conducteur 4 et le deuxième élément conducteur 5 forme un contact localisé au centre de la bosse.In the switch represented at figure 3 , a conductive line 6 connects the second conductive element 5 to two third conductive elements 7, arranged on either side of the bridge 1. The bridge 1 may comprise an insulating layer 8 above the conductive line 6. An insulating layer 9 is preferably arranged between the first conductive element 4 and the substrate 2, the insulating layer 9 having side dimensions smaller than the lateral dimensions of the first conductive element 4, so that the first conductive element 4 is convex. Thanks to the convex shape of the first conductive element 4, the contact between the first conductive element 4 and the second conductive element 5 forms a contact located in the center of the bump.

Un commutateur selon l'invention présente l'avantage d'être robuste et d'avoir un seul contact, qui peut être rendu suffisamment intime par un actionnement approprié. Par conséquent, la résistance de contact est très faible.A switch according to the invention has the advantage of being robust and having a single contact, which can be made sufficiently intimate by appropriate actuation. Therefore, the contact resistance is very low.

A titre d'exemple, le commutateur micro-mécanique peut être un interrupteur radiofréquence normalement ouvert, les moyens d'actionnement 3 comportant un actionneur électrostatique. Dans ce cas, comme représenté à la figure 4, le premier élément conducteur 4 est une ligne radiofréquence. Lorsque le commutateur est ouvert, le signal radiofréquence peut passer par la ligne radiofréquence constituant le premier élément conducteur 4, les pertes de contact étant ainsi évitées. Les moyens d'actionnement 3 sont, de préférence, constitués par des électrodes 3a et 3b d'un actionneur électrostatique. Les électrodes 3a peuvent être disposées dans la première couche isolante du pont 1, comme représenté à la figure 3. Les électrodes 3a, solidaires du pont 1, sont connectées à une source de tension. Les électrodes 3b, formées sur le substrat 2, entre le pont déformable 1 et le substrat 2, de part et d'autre de la ligne radiofréquence constituant le premier élément conducteur 4, constituent deux plans de masse sensiblement parallèles à la ligne radiofréquence. Elles remplissent ainsi une double fonction. D'une part, les électrodes 3b permettent d'établir une force électrique attractive entre les électrodes 3a et les électrodes 3b permettant de déformer le pont 1 lorsqu'une tension est appliquée entre les électrodes 3a et 3b. D'autre part les électrodes 3b servent de guide d'onde pour le signal transmis par la ligne radiofréquence constituant le premier élément conducteur 4. Dans l'application considérée, les troisièmes éléments conducteurs 7 sont constitués par des plans de masse électrique disposés sur le substrat 2 de part et d'autre du pont déformable 1. Ainsi, l'actionnement du commutateur met en contact la ligne radiofréquence et les plans de masse électrique constituant les troisièmes éléments conducteurs 7. Le signal électrique est alors absorbé par la masse électrique. L'interrupteur radiofréquence décrit ci-dessus représente l'avantage de transmettre, dans l'état passant, le signal radiofréquence sans aucune perte de contact.By way of example, the micro-mechanical switch may be a normally open radio frequency switch, the actuating means 3 comprising an electrostatic actuator. In this case, as shown in figure 4 , the first conductive element 4 is a radiofrequency line. When the switch is open, the radiofrequency signal can pass through the radiofrequency line constituting the first conductive element 4, the contact losses being thus avoided. The actuating means 3 are preferably constituted by electrodes 3a and 3b of an electrostatic actuator. The electrodes 3a may be arranged in the first insulating layer of the bridge 1, as shown in FIG. figure 3 . The electrodes 3a, integral with the bridge 1, are connected to a voltage source. The electrodes 3b, formed on the substrate 2, between the deformable bridge 1 and the substrate 2, on either side of the radiofrequency line constituting the first conductive element 4, constitute two ground planes substantially parallel to the radiofrequency line. They fulfill a dual function. On the one hand, the electrodes 3b make it possible to establish an attractive electric force between the electrodes 3a and the electrodes 3b making it possible to deform the bridge 1 when a voltage is applied between the electrodes 3a and 3b. On the other hand, the electrodes 3b serve as a waveguide for the signal transmitted by the radiofrequency line constituting the first conductive element 4. In the application under consideration, the third conductive elements 7 are constituted by electrical ground planes arranged on the substrate 2 on either side of the deformable bridge 1. Thus, the operation of the switch puts the radiofrequency line into contact with the electric ground planes constituting the third conductive elements 7. The electrical signal is then absorbed by the electrical ground. The radiofrequency switch described above represents the advantage of transmitting, in the on state, the radiofrequency signal without any loss of contact.

L'ensemble du composant radiofréquence peut être réalisé sur le substrat 2 par des techniques classiques de fabrication de circuits intégrés. La surface du substrat 2, sur laquelle sont disposés les troisième et premier éléments conducteurs 4 et 7, doit être en matériau isolant pour éviter un court-circuit permanent des éléments conducteurs. Le matériau isolant est typiquement de l'oxyde de silicium. Dans un mode de réalisation préférentiel, une couche isolante 9 est déposée sur le substrat 2 aux emplacements des électrodes 3b et à l'emplacement du premier élément conducteur 4, la couche isolante 9 ayant des dimensions latérales inférieures aux dimensions latérales des électrodes 3b et du premier élément conducteur 4 respectivement. Le matériau de la couche isolante 9 peut être par exemple du Si3N4 ou du SiO2. Le premier élément conducteur 4 et les électrodes 3b peuvent être déposés sur la couche isolante 9 par dépôt d'une couche métallique, préférentiellement en or. La couche sacrificielle peut ensuite être déposée au-dessus du premier élément conducteur 4 et des électrodes 3b. Le matériau de la couche sacrificielle est typiquement un matériau polymère, permettant d'être enlevé facilement après la fabrication du pont. Sur la couche sacrificielle, une couche de matériau isolant formant l'ossature du pont 1 est déposée. Le matériau isolant de cette couche peut par exemple être du Si3N4 ou du SiO2. Pour réaliser un actionneur électrostatique, les électrodes 3a peuvent être fabriquées par un dépôt métallique sur la couche isolante formant l'ossature du pont 1 et couverture des électrodes 3a par une couche isolante supplémentaire (non-représentée), destinée à isoler les électrodes 3a de la ligne conductrice 6. L'orifice 10 est percé par gravure dans la couche isolante formant l'ossature du pont 1, dans la couche isolante supplémentaire et dans la couche sacrificielle. Le deuxième élément conducteur 5 et la ligne conductrice 6 sont alors réalisés, de préférence simultanément, par dépôt d'une couche métallique de manière à remplir l'orifice 10 et à former une couche reliant le deuxième élément conducteur 5 et le troisième élément conducteur 7. De préférence, une deuxième couche isolante 8 (Si3N4 ou SiO2) est déposée au-dessus des éléments conducteurs. La couche sacrificielle est ensuite enlevée.The entire radiofrequency component can be made on the substrate 2 by conventional techniques for manufacturing integrated circuits. The surface of the substrate 2, on which are disposed the third and first conductive elements 4 and 7, must be made of insulating material to avoid a short circuit permanent conductive elements. The insulating material is typically silicon oxide. In a preferred embodiment, an insulating layer 9 is deposited on the substrate 2 at the locations of the electrodes 3b and at the location of the first conductive element 4, the insulating layer 9 having side dimensions smaller than the lateral dimensions of the electrodes 3b and the first conductive element 4 respectively. The material of the insulating layer 9 may be, for example, Si 3 N 4 or SiO 2 . The first conductive element 4 and the electrodes 3b can be deposited on the insulating layer 9 by depositing a metal layer, preferably gold. The sacrificial layer may then be deposited above the first conductive element 4 and the electrodes 3b. The material of the sacrificial layer is typically a polymeric material, allowing it to be easily removed after bridge fabrication. On the sacrificial layer, a layer of insulating material forming the framework of the bridge 1 is deposited. The insulating material of this layer may for example be Si 3 N 4 or SiO 2 . To produce an electrostatic actuator, the electrodes 3a can be produced by a metallic deposit on the insulating layer forming the framework of the bridge 1 and the covering of the electrodes 3a by an additional insulating layer (not shown) intended to isolate the electrodes 3a from the conductive line 6. The orifice 10 is pierced by etching in the insulating layer forming the framework of the bridge 1, in the additional insulating layer and in the sacrificial layer. The second conductive element 5 and the conductive line 6 are then made, preferably simultaneously, by deposition of a metal layer so as to fill the orifice 10 and to form a layer connecting the second conductive element 5 and the third conductive element 7 Preferably, a second insulating layer 8 (Si 3 N 4 or SiO 2 ) is deposited on top of the conductive elements. The sacrificial layer is then removed.

Claims (10)

  1. Micromechanical switch, comprising a deformable bridge (1), attached via its ends to a substrate (2), and actuating means (3) designed to deform the deformable bridge (1) so as to make an electrical contact between a first conducting element (4) securedly affixed to the substrate (2) and arranged between the bridge (1) and the substrate (2), and a third conducting element (7) arranged on the substrate (2) at the periphery of the bridge (1), switch characterized in that the deformable bridge (1) comprises at least a first insulating layer wherein a hole (10) is drilled, in which hole a conducting material is arranged salient from the bottom face of the bridge (1) so as to form a second conducting element (5) designed to come into contact with the first conducting element (4) when deformation of the bridge (1) takes place, a conducting line (6) connecting the second conducting element (5) to the third conducting element (7) being arranged on the first insulating layer.
  2. Switch according to claim 1, characterized in that the actuating means (3) comprise an electrostatic actuator.
  3. Switch according to claim 2, characterized in that the electrostatic actuator comprises electrodes (3a) arranged in the first insulating layer of the bridge (1).
  4. Switch according to any one of the claims 1 to 3, characterized in that the first conducting element (4) is a radiofrequency line and the third conducting element (7) is an electric ground plane arranged on the substrate (2).
  5. Switch according to any one of the claims 1 to 4, characterized in that two ground planes are arranged on the substrate (2) on each side of the bridge (1) and connected to the second conducting element (5), the conducting line (6) connecting the second conducting element (5) to the two ground planes.
  6. Switch according to any one of the claims 1 to 5, characterized in that the deformable bridge (1) comprises at least one conducting layer forming the conducting line (6).
  7. Switch according to claim 6, characterized in that the second conducting element (5) and the conducting line (6) are formed by a single conducting layer.
  8. Switch according to any one of the claims 1 to 7, characterized in that the deformable bridge (1) comprises at least a second insulating layer (8) above the conducting line (6).
  9. Switch according to any one of the claims 1 to 8, characterized in that a third insulating layer (9) is arranged between the first conducting element (4) and the substrate (2), the third insulating layer having smaller lateral dimensions than the lateral dimensions of the first conducting element (4), so that the first conducting element (4) is convex.
  10. Process for production of a micromechanical switch according to any one of the claims 1 to 9, characterized in that it comprises fabrication of the deformable bridge (1) by:
    - deposition of a sacrificial layer above the first conducting element (4),
    - deposition of a first insulating layer on the sacrificial layer,
    - etching of a hole (10) in the first insulating layer and in the sacrificial layer,
    - deposition of a metal layer so as to fill the hole (10) and form the second conducting element (5) and the conducting line (6),
    - removal of the sacrificial layer.
EP03815100A 2002-12-10 2003-12-09 Micro-mechanical switch and method for making same Expired - Lifetime EP1570504B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0215605 2002-12-10
FR0215605A FR2848331B1 (en) 2002-12-10 2002-12-10 MICRO-MECHANICAL SWITCH AND METHOD OF MAKING SAME
PCT/FR2003/003641 WO2004064096A1 (en) 2002-12-10 2003-12-09 Micro-mechanical switch and method for making same

Publications (2)

Publication Number Publication Date
EP1570504A1 EP1570504A1 (en) 2005-09-07
EP1570504B1 true EP1570504B1 (en) 2011-08-24

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US (1) US7382218B2 (en)
EP (1) EP1570504B1 (en)
AT (1) ATE521977T1 (en)
FR (1) FR2848331B1 (en)
WO (1) WO2004064096A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2876995B1 (en) * 2004-10-26 2007-05-04 Commissariat Energie Atomique MICROSYSTEM COMPRISING A DEFORMABLE BRIDGE
JP4234737B2 (en) * 2006-07-24 2009-03-04 株式会社東芝 MEMS switch
US8450902B2 (en) * 2006-08-28 2013-05-28 Xerox Corporation Electrostatic actuator device having multiple gap heights
KR100837741B1 (en) * 2006-12-29 2008-06-13 삼성전자주식회사 Micro switch device and method of manufacturing micro switch device
JP4334581B2 (en) * 2007-04-27 2009-09-30 株式会社東芝 Electrostatic actuator
US7902946B2 (en) * 2008-07-11 2011-03-08 National Semiconductor Corporation MEMS relay with a flux path that is decoupled from an electrical path through the switch and a suspension structure that is independent of the core structure and a method of forming the same

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Publication number Priority date Publication date Assignee Title
US6046659A (en) * 1998-05-15 2000-04-04 Hughes Electronics Corporation Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
AU2001268742A1 (en) * 2000-06-28 2002-01-08 The Regents Of The University Of California Capacitive microelectromechanical switches
EP1419511B1 (en) * 2001-08-20 2006-06-28 Honeywell International Inc. Snap action thermal switch
US6876282B2 (en) * 2002-05-17 2005-04-05 International Business Machines Corporation Micro-electro-mechanical RF switch
JP4447940B2 (en) * 2004-02-27 2010-04-07 富士通株式会社 Microswitching device manufacturing method and microswitching device

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US7382218B2 (en) 2008-06-03
US20050280974A1 (en) 2005-12-22
FR2848331B1 (en) 2005-03-11
FR2848331A1 (en) 2004-06-11
WO2004064096A1 (en) 2004-07-29
EP1570504A1 (en) 2005-09-07
ATE521977T1 (en) 2011-09-15

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