EP1517854A1 - Integriertes, kontinuierliches verfahren zur herstellung molekularer einkomponentenvorl ufer mit stickstoff-br ckenfunkt ion - Google Patents
Integriertes, kontinuierliches verfahren zur herstellung molekularer einkomponentenvorl ufer mit stickstoff-br ckenfunkt ionInfo
- Publication number
- EP1517854A1 EP1517854A1 EP03761549A EP03761549A EP1517854A1 EP 1517854 A1 EP1517854 A1 EP 1517854A1 EP 03761549 A EP03761549 A EP 03761549A EP 03761549 A EP03761549 A EP 03761549A EP 1517854 A1 EP1517854 A1 EP 1517854A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- product
- reaction
- phase
- production
- regeneration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000002243 precursor Substances 0.000 title claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 title claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims description 5
- 238000011437 continuous method Methods 0.000 title 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 53
- 230000008929 regeneration Effects 0.000 claims abstract description 31
- 238000011069 regeneration method Methods 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims description 59
- 239000000047 product Substances 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 19
- 150000003863 ammonium salts Chemical class 0.000 claims description 16
- 239000006227 byproduct Substances 0.000 claims description 15
- 239000011541 reaction mixture Substances 0.000 claims description 14
- 239000004215 Carbon black (E152) Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000003786 synthesis reaction Methods 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229930195733 hydrocarbon Natural products 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 239000007858 starting material Substances 0.000 claims description 6
- 241000251730 Chondrichthyes Species 0.000 claims description 5
- 238000010924 continuous production Methods 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 101100425947 Mus musculus Tnfrsf13b gene Proteins 0.000 claims description 4
- 239000011225 non-oxide ceramic Substances 0.000 claims description 4
- 229910052575 non-oxide ceramic Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 150000002430 hydrocarbons Chemical group 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000009833 condensation Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 1
- 239000012071 phase Substances 0.000 description 55
- AGIRUHDXGXFMEU-UHFFFAOYSA-N n-dichloroboranyl-n-trichlorosilylmethanamine Chemical compound ClB(Cl)N(C)[Si](Cl)(Cl)Cl AGIRUHDXGXFMEU-UHFFFAOYSA-N 0.000 description 21
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 15
- -1 n-octyl Chemical group 0.000 description 12
- 239000012159 carrier gas Substances 0.000 description 10
- 238000000926 separation method Methods 0.000 description 10
- 239000007787 solid Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 5
- 239000013067 intermediate product Substances 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229930195734 saturated hydrocarbon Natural products 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000002355 alkine group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000003493 decenyl group Chemical group [H]C([*])=C([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- NCMVPNWADQCPNO-UHFFFAOYSA-N n-trichlorosilylmethanamine Chemical compound CN[Si](Cl)(Cl)Cl NCMVPNWADQCPNO-UHFFFAOYSA-N 0.000 description 1
- 125000005187 nonenyl group Chemical group C(=CCCCCCCC)* 0.000 description 1
- 125000004365 octenyl group Chemical group C(=CCCCCCC)* 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 238000011020 pilot scale process Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/08—Compounds containing boron and nitrogen, phosphorus, oxygen, sulfur, selenium or tellurium
- C01B35/14—Compounds containing boron and nitrogen, phosphorus, sulfur, selenium or tellurium
- C01B35/146—Compounds containing boron and nitrogen, e.g. borazoles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
- C01C1/28—Methods of preparing ammonium salts in general
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
Definitions
- the invention relates to a method for the regeneration of a reactor and the use of this method for the improved implementation of manufacturing processes for desired products.
- the invention relates in particular to the implementation of a continuous process for the production of molecular precursors for non-oxide inorganic ceramics.
- ceramics which comprise the elements X, Y, N and C, where X and Y can be, for example, the elements Si, P, Al, Ti, V, Zr, Ta or B.
- the prerequisite for these advantageous properties is the realization of a regular sequence of X-N (-C) -Y bonds on an atomic scale. This requirement can be met by the synthesis and provision of a one-component precursor with a nitrogen bridge function, which contains the elements listed above. This precursor compound is then polymerized and then e.g.
- non-oxide ceramics from molecular precursors makes materials that are characterized by high purity accessible. Furthermore, such one-component precursors ensure a homogeneous distribution of the elements involved in the ceramic.
- the synthesis of the one-component precursor according to DE 1 00 45 428 takes place in a two-stage reaction process, the reaction steps of which are carried out sequentially in time.
- the intermediate product from the first reaction step usually has to be stored in a solvent at low temperatures, since it would polymerize rapidly at room temperature.
- the by-product MeNH 3 CI is obtained in the first reaction stage and the by-product CI 3 SiNMeH 2 CI in the second reaction stage as a solid. It would be desirable to prevent the accumulation of these substances in the process.
- oxygen and moisture from the ambient air can contaminate the reaction space, which would seriously impair the product quality. This would require complex flushing of the entire system before each production process.
- the process should be able to be carried out continuously or quasi-continuously without the reaction space with the ambient air in
- the product yield is to be optimized by minimizing the stoichiometric excess of starting materials and maximizing the selectivity of the product separation. - Excess input materials and valuable intermediate products should be able to be returned to the process.
- the invention relates in particular to a temperature-driven, cyclical mode of operation in a circuit of flow apparatus.
- the invention is based on the observation that the ammonium salts formed in a reaction, in particular in the two reaction stages, decompose to volatile substances at moderate temperatures even at ( ⁇ 200 ° C.). From this, an elegant approach was derived to drive these substances out of the reaction volume purely thermally.
- the invention therefore relates in a first aspect to a process for the regeneration of a reactor, wherein ammonium salts formed as a by-product in the reactor at temperatures of> 150 ° C., in particular> 180 ° C. and more preferably at> 200 ° C.
- ammonium salts formed in many reactions in particular in reactions for the production of one-component precursors of non-oxidic ceramics, can be sublimed at these temperatures and can thus be converted into the gas phase.
- These ammonium salts which normally precipitate during the production of the desired substances and accumulate in the reactor, can thus be expelled from the reactor in a gaseous manner in a simple manner, without opening the reactor for the mechanical removal of solid substances.
- the regeneration step according to the invention can be used in particular in the process for producing a desired product in which ammonium salt is formed as a by-product. While it was previously necessary in such processes to remove the solid ammonium salt, the undesired by-products can be removed from the reactor and, if appropriate, separated off in a simple manner by the thermal regeneration step disclosed herein.
- the regeneration step according to the invention is particularly preferably used in a method for producing one-component precursors of non-oxide ceramics which have a nitrogen bridge function.
- the one-component precursor is synthesized in a two-stage reaction process in the gas phase.
- the synthesis phase and the regeneration phase that is to say the removal of low-volatility by-products by thermal treatment of the reactor, preferably follow one another cyclically, a cycle consisting of a production phase and a regeneration phase.
- the production phases and rainy Ration phases can be of the same or different lengths and generally comprise a time period of 10 seconds to 24 hours, in particular 1 minute to 10 hours.
- the switchover between the production phase and the regeneration phase can take place in a time-controlled or state-controlled manner, advantageously due to the total pressure drop in the reaction stages at intervals between 10 seconds and 24 hours.
- the process according to the invention can be used in particular for the production of compounds which have the structural feature XNY and in particular the structural feature XN (-C) -Y, where X and Y are each independently Si, P, Al, Ti, V, Zr, Ta, B , Ga or In can be.
- R each independently represents a hydrocarbon radical having 1 to 20 carbon atoms or hydrogen
- R 1 represents a hydrocarbon radical having 1 to 20 carbon atoms or hydrogen, x 0; Is 1 or 2 and y is 0 or 1.
- the desired products are preferably manufactured in a two-stage process.
- the compounds of the formula (I) are prepared, for example, by an amine component R NH 2 in succession with a silane component SiHal 4 _ x R x and a borane component BHal 3 .
- y R y is implemented in any order.
- the silane component is preferably reacted in the gas phase with the amine component continuously or in portions, with or without a carrier gas.
- the intermediate product formed is in turn preferably reacted further in the second step with the borane component in the condensed phase, in an inert solvent or preferably in the gas phase.
- dichloroboryl-methyl-trichlorosilyl-amine CI 3 Si - N (CH 3 ) - BCI 2 (DMTA) can be produced in pure form.
- Tetrachlorosilane and methylamine are first reacted in the gas phase.
- Methyl-trichlorosilyl-amine is formed as an intermediate product, which is reacted with trichloroborane in condensed form or preferably in the gas phase.
- the radicals R and R 1 can each independently represent a hydrocarbon radical having 1 to 20 carbon atoms, preferably having 1 to 10 carbon atoms.
- a hydrocarbon residue is a residue that is formed from the elements carbon and hydrogen.
- the hydrocarbon radical can be branched or unbranched, saturated or unsaturated.
- the hydrocarbon radical can also contain aromatic groups, which in turn can be substituted with hydrocarbon radicals.
- Examples of preferred hydrocarbon radicals are, for example, unbranched saturated hydrocarbon radicals, such as C 1 -C 20 -alkyl, in particular methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl , n-nonyl and n-decyl.
- the radicals R can also be branched saturated hydrocarbons, in particular branched C 3 to C 20 alkyls, such as i-propyl, i-butyl, t-butyl and further branched alkyl radicals.
- the radical R comprises one or more olefinically unsaturated groups.
- examples of such radicals are vinyl, allyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl, nonenyl, decenyl, butadienyl, pentadienyl, hexadienyl, heptadienyl, octadienyl, nonadeinyl and decadienyl.
- the radical R can also contain an alkyne group, ie a C C C bond.
- At least one radical R and preferably all radicals R contain an aromatic group, in particular an aromatic group Group having 5 to 10 carbon atoms, in particular 5 or 6 carbon atoms, such as a phenyl group or an aromatic group substituted by a hydrocarbon, in particular a C 1 -C 10 -hydrocarbon, in particular a phenyl group, such as methylphenyl, dimethylphenyl , Trimethylphenyl, ethylphenyl or propylphenyl.
- the aromatic radical preferably comprises from 5 to 20, in particular up to 10 carbon atoms.
- the hydrocarbon radicals R and R 1 can each be varied independently of one another.
- At least one radical R and / and R 1 and in particular all radicals R and / or R 1 comprise a C 1 to C 20 alkyl group, in particular one a phenyl group, a vinyl group or an allyl group or a hydrocarbon radical having 1 to 3 carbon atoms, in particular methyl, ethyl or propyl and most preferably methyl.
- the radical shark stands for a halogen atom and means in particular Cl, Br or I, it being preferred that at least one radical shark and preferably all radicals shark C1.
- a cycle is divided into two phases: in the first phase, which is also referred to herein as the synthesis phase or as the production phase, the desired product, for example a one-component precursor, is synthesized and isolated in pure form. Excess feedstocks are returned to the synthesis process.
- the second phase of the cycle which is referred to herein as the regeneration phase, the ammonium salts formed in the first and in the second reaction stage are removed from the reaction volume in a thermally decomposed manner. Valuable components can be completely or partially isolated and returned to the synthesis process.
- the switchover between the production phase and the regeneration phase can be predefined from the outside or advantageously controlled by the total pressure drop in the reaction stages.
- reaction products obtained in the solid form during the production phase are retained in the reaction volume by porous filters, in particular in both reaction stages, while gaseous components of the reaction mixture are passed on.
- the forwarding can take place, for example, by forced convection.
- the solid by-products that are retained in the reaction volumes are thermally converted into the gas phase during the regeneration phase, for example by sublimation, evaporation or thermal decomposition, and can then be discharged from the reaction volume in gaseous form without problems.
- the ammonium salts can be discharged undiluted or in an inert carrier gas stream.
- the change between the production phase and the regeneration phase can also be achieved by changing the temperature of the heat carrier provided for thermostatting the reactors.
- the temperature of the heat carrier provided for thermostatting the reactors For heat regulation of the reaction stages, it is possible to use the same or different heat carriers in the reaction stages and during the production or regeneration phase.
- a quasi-continuous production of the product for example DMTA
- two devices per reaction step are used for the two-stage (or multi-stage) reaction, one of which is operated in the production mode and the other in the regeneration mode.
- the desired target product is advantageously isolated from the other components of the reaction mixture obtained from the last reactor, for example by crystallization, condensation or by using solvents such as hexane. However, it is possible to use no solvent to isolate the target product.
- the isolation of the target product is preferably carried out continuously.
- the procedure according to the invention in particular the conversion of solid by-products into the gas phase, allows undesired by-products to be separated off and, moreover, valuable feedstocks or intermediate products contained therein can be returned to the process after the separation step in order to separate off the desired product or undesired by-products. Unreacted feedstocks are advantageously fed as feed stream into the second reaction stage.
- MeNH 2 and at least one of the compounds SiCI 4 , BCI 3 , PCI 3 , PCI 5 , AICI 3 , GaCI 3 , InCI 3 , TiCI 4 , VCI 3 , VCI 4 , ZrCI 4 or TaCI 5 are advantageously used as starting materials for the first reaction stage used.
- the starting materials for the second reaction stage are advantageously the intermediate from the first reaction stage and at least one of the compounds SiCI 4 , BCI 3 , PCI 3 , PCI 5 , AICI 3 , GaCI 3 , lnCI 3 , TiCI 4 , VCI 3 , VCI 4 , ZrCI 4 or TaCI 5 used.
- recycled feedstocks or intermediates can be used.
- the cycle of the production phase and regeneration phase is preferably carried out at least once, in particular at least twice and particularly preferably at least five times in the methods according to the invention.
- the invention is further illustrated by the attached Figures 1 to 4 and the following examples.
- Figure 1 shows schematically the production phase in a two-stage process.
- Figure 2 shows schematically the regeneration phase in a two-stage process.
- FIGS 3 and 4 illustrate isolation stages for the production of the pure end product and for the production of recyclable process streams.
- Fig. 1 shows the process flow diagram according to an embodiment of the invention during the first phase of the cycle, which is referred to below as the production phase.
- shut-off valves 1 0, 1 1, 1 2, 1 3, 1 4 are open and the shut-off valves 1 5, 1 6, 1 7, 1 8 are closed.
- MeNH 2 is metered into the reactor 4 from the thermostatted reservoir 1 and SiCl 4 from the thermostatted reservoir 2 either pure or in an inert carrier gas stream, for example N 2 , He, Ar, CO 2 .
- the reactor temperature is controlled with the help of an external heat transfer medium 4b at a temperature between -60 ° C and + 60 ° C.
- the total pressure in the reactor 4 is between 1 mbar and 5 bar, the residence time of the reaction mixture is between 0.1 s and 10 s.
- the feedstocks are both introduced into the reactor of the first reaction stage 4 together at points or both locally or one point and one locally. During the production phase preferably pronounced axial concentration profiles in the gas phase in the reaction stages.
- the volatile components of the reaction mixture from the reactor 4 are fed into the reactor 5 in the line 6 thermostatted between -60 ° C. and + 60 ° C.
- BCI 3 is fed into the reactor 5 from the storage container 3 either pure or in an inert carrier gas stream, for example N 2 , He, Ar, CO 2 .
- the reactants are both introduced into the reactor at points or both locally or one at points and one locally.
- the type of metering and the flow control ensure a stochiometric excess of BCI 3 compared to CI 3 Si-NMeH of at least 2: 1 in the entire reaction space.
- the reactor temperature is kept constant between -60 ° C and + 1 20 ° C with the help of an external heat transfer medium 5b.
- the total pressure in the reactor 5 is between 1 mbar and 5 bar, the residence time of the reaction mixture is between 0.1 s and 10 s.
- the reactor temperature is selected so that the conversion to DMTA takes place spontaneously.
- the components of the reaction mixture which are fluid during the reaction temperature are withdrawn from the reactor 5 through the integrated filter 5a and the solid reaction products are retained in the reactor.
- the reaction mixture which is withdrawn from the reactor 5 contains the target product DMTA, excess BCI 3 , possibly the inert carrier gas and possibly excess SiCI 4 , as well as traces of the unreacted MeNH 2 .
- the reaction mixture is in a thermostatted line 7, which is thermostated at a temperature between -60 ° C and 1 20 ° C passed to the separation stage 8.
- the separation stage for obtaining the pure DMTA is described in detail below.
- the second phase of the method is activated in a time-controlled or state-controlled manner.
- a suitable control variable is, for example, the pressure difference between the reactor inlet and the reactor outlet.
- Fig. 2 shows the process flow diagram according to the invention during the second phase of the cycle, which is referred to as the regeneration phase.
- the shut-off valves 10, 1 1, 1 2, 1 3, 1 4 are closed and the shut-off valves 1 5, 1 6, 1 7, 1 8 are opened.
- the templates for the input materials SiCI 4 , MeNH 2 and BCI 3 are disconnected. Pure inert gas thus flows through the reactors.
- the temperatures of the heat transfer media for thermostating reaction stages 4 and 5 are switched.
- Either one and the same heat transfer medium or different heat transfer media can be used for the thermostatting of reaction stages 4 and 5.
- the temperatures of the reactors 4 and 5 are regulated to values above the sublimation temperatures of the ammonium salts formed during the production phase. This requires temperatures between 1 50 ° C and 600 ° C, especially between 200 ° C and 400 ° C.
- the inert carrier gas drives the volatile sublimation products out of the reactors and thereby regenerates them from the salt load that has accumulated during the production phase.
- the sublimation products can also be sucked off with the aid of a vacuum pump.
- the discharged ammonium salts are recombined in the condenser 9 by cooling and stored in a collecting vessel. After a period of time between 10 s and 24 h, the production phase, which is described above, is activated again either time-controlled or state-controlled.
- the process is continuously carried out by periodically switching between the production phase and the regeneration phase.
- a parallel connection of two reactors is required for the first and for the second reaction stage.
- One reactor each in the first and second reaction stages are operated in production mode and one reactor each in the first and second reaction stages in regeneration mode.
- the separation stage 8 is connected to the end of the second reaction stage.
- Fig. 3 shows the schematic of the separation stage described here.
- the gaseous reaction mixture with the composition resulting from reaction stage 5 is introduced into a condenser 21.
- the condenser is cooled indirectly (22) or directly (23) using a solvent, typically hexane, to a temperature between -30 ° C and + 7 ° C.
- the required solvent is circulated from a reservoir 24 with the help of a pump 25.
- the circulation of the solvent increases the DMTA concentration in the storage container to just below saturation.
- the DMTA additionally introduced with the reaction product therefore leads to supersaturation and precipitates out in crystalline form.
- the suspension is filtered off in the filter 26, so that the DMTA as filter residue 27 is separated from the other components of the reaction mixture.
- the crystalline DMTA can be removed from the process with the aid of a cellular wheel pump 28 and either passed directly to the polymerization or stored temporarily.
- SiCI 4 , BCI 3 and MeNH 2 which can also be contained in the product stream of the reaction stage, are also soluble in hexane and are transported into the storage container.
- SiCl 4 , BCI 3 and MeNH 2 which are significantly more volatile than the solvent hexane, can be discharged from the process by heating a second partial stream 29, which is continuously conducted between the storage container 24 and the phase separator 30. For this, the temperature in the phase separator 30 must be between + 1 0 ° C and 40 ° C. Since the discharged stream 31 typically contains about 80-95% BCI 3 , about 4-20% SiCI 4 and possibly traces of MeNH 2 and hexane, it can be usefully recycled to reaction stage 5 without aftertreatment.
- the product separation variant described here does not require a solvent.
- the gaseous reaction mixture with the composition resulting from reaction stage 5 is introduced into a heat exchanger 32.
- the temperature is set to a value between 8 ° C and 50 ° C with the help of a heat transfer medium, so that DMTA is obtained in liquid form and the partial pressures of the components SiCI 4 , BCI 3 and MeNH 2 remain lower than their saturation vapor pressure.
- the liquid DMTA 34 can either be sent directly to the polymerization or stored temporarily.
- the discharged gas 35 contains the components BCI 3 and SiCI 4 in a volume ratio of 5: 1 to 20: 1 as well as traces of MeNH 2 and vaporous DMTA ( ⁇ 1000 ppm) possibly diluted in an inert carrier gas stream. This gas can be usefully recycled to reaction stage 5 without aftertreatment.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10228990 | 2002-06-28 | ||
DE10228990A DE10228990A1 (de) | 2002-06-28 | 2002-06-28 | Integriertes, kontinuierliches Verfahren zur Herstellung molekularer Einkomponentenvorläufer mit Stickstoff-Brückenfunktion |
PCT/EP2003/006853 WO2004002886A1 (de) | 2002-06-28 | 2003-06-27 | Integriertes, kontinuierliches verfahren zur herstellung molekularer einkomponentenvorläufer mit stickstoff-brückenfunktion |
Publications (1)
Publication Number | Publication Date |
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EP1517854A1 true EP1517854A1 (de) | 2005-03-30 |
Family
ID=29723531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP03761549A Withdrawn EP1517854A1 (de) | 2002-06-28 | 2003-06-27 | Integriertes, kontinuierliches verfahren zur herstellung molekularer einkomponentenvorl ufer mit stickstoff-br ckenfunkt ion |
Country Status (6)
Country | Link |
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US (1) | US7683197B2 (de) |
EP (1) | EP1517854A1 (de) |
JP (1) | JP5054280B2 (de) |
AU (1) | AU2003246625A1 (de) |
DE (1) | DE10228990A1 (de) |
WO (1) | WO2004002886A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102004059942B4 (de) * | 2004-12-13 | 2006-10-26 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Kontinuierliches Verfahren für Silazanspaltungen, insbesondere für die Herstellung von molekularen Einkomponentenvorläufern für nichtoxidische Keramiken |
DE102005005383A1 (de) * | 2005-02-05 | 2006-08-10 | Degussa Ag | Verfahren zur kontinuierlichen Herstellung kohlenstoffhaltiger Mono-, Oligo- und/oder Polyborosilazane |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4730074A (en) * | 1986-12-31 | 1988-03-08 | Union Carbide Corporation | Vapor phase alcoholysis of aminosilanes and carbamatosilanes |
JPH06135715A (ja) * | 1992-10-28 | 1994-05-17 | Mitsubishi Materials Corp | 高純度希土類ハロゲン化物の製造方法 |
EP0636704B1 (de) * | 1993-07-30 | 1999-11-03 | Applied Materials, Inc. | Ablagerung des Siliziumnitrids |
JP3729578B2 (ja) * | 1996-11-25 | 2005-12-21 | 株式会社ルネサステクノロジ | 半導体製造方法 |
JP3690095B2 (ja) * | 1997-12-22 | 2005-08-31 | ソニー株式会社 | 成膜方法 |
US6794308B2 (en) * | 1998-01-07 | 2004-09-21 | Texas Instruments Incorporated | Method for reducing by-product deposition in wafer processing equipment |
US6107198A (en) * | 1998-03-26 | 2000-08-22 | Vanguard International Semiconductor Corporation | Ammonium chloride vaporizer cold trap |
DE19817680A1 (de) * | 1998-04-21 | 1999-10-28 | Bayer Ag | Verfahren zur Herstellung eines Siliciumbornitridkeramikpulvers |
DE10045428A1 (de) * | 2000-09-14 | 2002-03-28 | Max Planck Gesellschaft | Silicium-Bor-Kohlenstoff-Stickstoff-Keramiken und Vorläuferverbindungen, Verfahren zu deren Herstellung sowie deren Verwendung |
-
2002
- 2002-06-28 DE DE10228990A patent/DE10228990A1/de not_active Withdrawn
-
2003
- 2003-06-27 WO PCT/EP2003/006853 patent/WO2004002886A1/de active Application Filing
- 2003-06-27 US US10/519,530 patent/US7683197B2/en not_active Expired - Fee Related
- 2003-06-27 JP JP2004516734A patent/JP5054280B2/ja not_active Expired - Fee Related
- 2003-06-27 AU AU2003246625A patent/AU2003246625A1/en not_active Abandoned
- 2003-06-27 EP EP03761549A patent/EP1517854A1/de not_active Withdrawn
Non-Patent Citations (1)
Title |
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See references of WO2004002886A1 * |
Also Published As
Publication number | Publication date |
---|---|
US7683197B2 (en) | 2010-03-23 |
DE10228990A1 (de) | 2004-01-15 |
US20050202175A1 (en) | 2005-09-15 |
JP5054280B2 (ja) | 2012-10-24 |
JP2005531623A (ja) | 2005-10-20 |
AU2003246625A1 (en) | 2004-01-19 |
WO2004002886A1 (de) | 2004-01-08 |
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