Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
  • H01L28/20—Resistors
  • H01L28/22—Resistors with an active material comprising carbon, e.g. diamond or diamond-like carbon [DLC]

Definitions

• the invention relates to a resistor as a component in electronics, for example as a line terminating resistor for terminating electrical lines or as a load resistor for converting and dissipating electrical energy into heat, in particular in the high-frequency range (HF), and a method for its production and use ,
• a resistor as a component in electronics, for example as a line terminating resistor for terminating electrical lines or as a load resistor for converting and dissipating electrical energy into heat, in particular in the high-frequency range (HF), and a method for its production and use ,
• HF high-frequency range
• SMD surface-mounted device
• Ceramic substrate in Siebdruckver a metal glaze layer is applied.
• Such SMD resistors are therefore encapsulated components that are surface-mounted on the circuit board of an electronic circuit, for example by soldering.
• the use of doped semiconductors based on aluminum nitride (A1N) for realizing the resistance function is known.
• a high-resistance thin doped conductor track on an electrically insulating substrate is used.
• the object of the present invention is to provide an electrical resistance component, in particular a line terminating resistor and a method for producing the same, the resistance layers of which retain their integrity even at very high temperatures and at the same time have a high thermal conductivity, so that the resistance component places high demands on its resilience is sufficient and a high power loss is implemented in a small area.
• the electrical properties of the component should be almost independent of temperature over a wide temperature range.
• the resistance area is made of diamond, e.g. is electrically conductive due to doping
• a material is used for the resistance area of the resistance component, which has an extraordinarily high thermal conductivity of up to 2250 W / mK, which is a multiple of the values of silver and copper.
• the electrically conductive doping makes the diamond, which is electrically insulating in nominally undoped form, in a defined manner and in a wide range of specific resistance values in the order of magnitude between mOhmc ⁇ . and MOhmcm made conductive.
• the diamond material can be monocrystalline on selected substrates (e.g. iridium) or polycrystalline.
• diamond has a very low coefficient of thermal expansion, so that a resistance range consisting of diamond can also be used in arrangements that are sensitive to geometric deformations and mechanical stresses. It is also advantageous that the bandgap of diamond is very high at 5.4 to 5.5 eV, which means that the formation of intrinsic charge carriers only occurs at much higher temperatures to the same extent as with other materials with a smaller band gap. The almost constant charge carrier density over the entire temperature range between 0 and 500 ° C contributes significantly to the almost constant resistance value of the resistance component.
• diamond as a resistance range is furthermore advantageously manifested in the fact that diamond is chemically inert and its surface can be adjusted hydrophilically or hydrophobically and is stable in the long term even under aggressive environmental conditions.
• diamond appears to be advantageous as a resistance range particularly because of its abrasion resistance, its flexural rigidity of up to 1150 GPa and its breaking stress of up to 11 GPa, since higher reliability even under mechanical load, e.g. Tension is guaranteed by thermal expansion of the housing.
• the use of diamond material advantageously not only enables an almost constant resistance value of the resistance component over the temperature range between 0 ° C. and 500 ° C. in the present invention, but also the thermal stability of the resistance layer up to a temperature of 600 ° C. is ensured , Because the dielectric loss angle tan ⁇ ⁇ is negligible for all the applications considered here, only very small parasitic line losses occur.
• the doped diamond (p + or p " ) is therefore also suitable for leads to resist Stand component.
• the resistance component according to the invention can thus be used in a wide range of possible uses, particularly in high-frequency technology and also in a large number of different forms, for example also as a resistance element in the form of an electrically conductive doped diamond layer per se and / or in coplanar configurations.
• the resistance element can also be used as an attenuator.
• the electrical resistance component can advantageously be implemented in planar technology, so that the resistance region consisting of electrically conductively doped diamond is applied as a layer on a substrate. This ensures good heat emission to the environment or adjacent layers; Furthermore, conventional methods of microtechnology and microelectronics can be used for the production of components in layer technology.
• non-conductive diamond and / or highly oriented non-conductive diamond HOD
• a very good electrical insulator is used as the substrate, which is also highly insulating in the
• the substrate consisting of non-conductive diamond
• another substrate or another substrate with a layer of non-conductive diamond or HOD can also be used, the substrate material advantageously being selected from the materials silicon, silicon nitride, silicon carbide, silicon oxide, silicon dioxide , Iridium, glass, refractory metals or carbides thereof, sapphire, magnesium oxide, graphite, germanium, niobium, tantalum, titanium, tungsten, tungsten carbide, titanium carbide or titanium nitride.
• the insulating property of the non-conductive diamond layer comes into its own when it is directly adjacent to the resistance area made of freshly conductively doped diamond.
• the substrate itself can also be designed as a layer.
• the good heat conduction property of the non-conductive diamond in the substrate can be advantageously exploited in that the electrical resistance component is equipped with a thermal sink which adjoins the substrate and into which the diamond or substrate leads. heat is dissipated.
• the substrate can be designed as a membrane which is brought into direct contact with a coolant. Due to the high thermal conductivity of diamond, this is the most effective form of heat dissipation from the component.
• the diamond resistance range of the component is p ⁇ or n " doped.
• the doping can be done with at least one of the substances boron, sulfur, phosphorus, graphite, diamond, diamond-like carbon (DLC), lithium, hydrogen, nitrogen or Sp 2 -bound Carbon.
• the properties of the resistance component can be specifically designed for a wide range of application areas.
• the resistance value can be made dependent on environmental factors such as the pH value of the environment.
• the dependence of the resistance on the temperature can also be set in a targeted manner by specifically setting the dopant concentration.
• the electrical properties of the component can be determined by determining the component geometry.
• the trim metallization to determine the length of the resistance element and thus its resistance value can be varied.
• Metallization of the resistance area is provided for the contacting. This contact can also be made from the back.
• the materials of the metallization are preferably selected from: Ti, W, Pt, Au, TiW, WC, TiC, TiN, Si, Cu, Be, Fe, Al, Ni, refractory metals, Cr, Sn and / or Ba, or above - mutually arranged layer sequences of these metals and / or alloys thereof.
• a preferred embodiment of the invention further provides for arranging several, in particular two to ten, individual components on a substrate, as a result of which the possible uses of the component according to the invention are significantly increased.
• a partial area of an overall diamond structure made of electrical can be made technically with little effort and without subsequent assembly steps conductive doped and non-conductive diamond layers are shown.
• Such a growth process can take place, for example, in the CVD process (Chemical Vapor Deposition) or in the MWPECVD process (Microwave Plasma Enhanced CVD) or in the HotFilament CVD process or in the Combustion Flame process or in other hydrogen-methane plasma processes ,
• An advantageous design of the method provides for the diamond resistance region to be provided with metallizations for applying electrical voltage.
• the contact can also be from the back respectively.
• FIG. 1 shows a cross section through a resistance component in layer technology and with a thermal sink.
• Fig. 2 is a top view of a resistor component as it is designed and built in coplanar technology and used in RF technology.
• Fig. 1 shows a resistance device in
• Layering technology (planar technology) is carried out in cross section.
• a voltage is applied to the resistance region 2 via contacts 1, for example made of metal.
• the resistance region 2 is designed as a resistance layer on the substrate 3. While the resistance layer 2 consists of electrically conductive doped diamond - in this case it is a p + doping with boron, the dopant concentration being greater than 5 x 10 17 cm -3 - the substrate consists of non-conductive diamond, although other substrate materials can be used, but with regard to the properties of diamond as a good electrical insulator with simultaneous excellent thermal conductivity and low heat capacity, the use of non-conductive diamond as a substrate or at least one substrate layer adjacent to the resistance layer or the resistance region appears to be particularly suitable.
• the contacts 1 can be designed as metallizations, this metallization can be selected from Ti, W, Pt, Au, TiW, WC, TiC, TiN, Si, Cu, Be, Fe, Al, Ni, refractive metals, Cr, Sn and / or Ba, or stacked layers of these metals and / or alloys thereof.
• the power supplied via the contacts 1 and converted into heat in the resistance area 2 is quickly and spatially uniformly passed on to the substrate layer 3 in particular over the resistance area.
• the area required for the resistance region 2 to convert the electrical power into heat is small due to the high stability of the electrically conductive doped diamond material of ⁇ 1.5 GW / cm 3 .
• the substrate layer 3 made of electrically non-conductive diamond has an electrically strong insulating effect, but conducts the heat accumulating in the resistance area 2 very well for removal in the adjacent area thermal sink 4.
• the resistance component is produced in that the diamond layer grows on a carrier material, for example by means of a CVD process (Chemical Vapor Deposition), and the doping into the diamond of the resistance layer 2 is already carried out during this growth process.
• a CVD process Chemical Vapor Deposition
• the thermal sink 4 for example made of silicon, as this carrier material, and to grow the substrate layer 3 made of electrically non-conductive diamond thereon, and the resistance layer 2 on this again, including an electrically conductive doping to grow, which can be doped differently in different areas or with different materials and is provided with metallizations or contacts 1. Areas of the resistance layer 2 can also be separated from one another by an etching process.
• the top view of a resistance component serves for illustration.
• the resistance region 2 is electrically connected to the contacts and supply lines 1; the substrate and the thermal sink are not shown in any more detail and form layers which are located underneath the representation and are therefore covered by the representation, analogously to the cross section in FIG. 1.
• the top view of a resistance component as it can be used in high-frequency technology is used for illustration.
• the resistance area 2 is in so-called coplanar technology in a level with the electrical leads 1 attached to a substrate.
• the supply line is constructed in three parts, with the so-called signal conductor in the middle surrounded by two so-called ground lines. Not shown here are the substrate layers located analogously to FIG. 1 and the thermal sink.
• This arrangement ensures symmetrical wave guidance for electromagnetic waves.
• Conductivity of the resistance material ensures adaptation over a wide temperature range.
• a functionally equivalent structure would also be conceivable in microstrip line technology or other line structures used in high-frequency technology.

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)
• Thermistors And Varistors (AREA)
• Carbon And Carbon Compounds (AREA)
• Apparatuses And Processes For Manufacturing Resistors (AREA)
• Non-Adjustable Resistors (AREA)

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Citations (2)

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• 2002
  • 2002-05-07 DE DE10220360A patent/DE10220360B4/de not_active Expired - Fee Related
• 2003
  • 2003-05-07 EP EP03720555A patent/EP1516359A2/de not_active Ceased
  • 2003-05-07 US US10/513,864 patent/US7393717B2/en not_active Expired - Lifetime
  • 2003-05-07 JP JP2004504244A patent/JP2005524986A/ja active Pending
  • 2003-05-07 WO PCT/EP2003/004792 patent/WO2003096357A2/de active Application Filing
  • 2003-05-07 AU AU2003224148A patent/AU2003224148A1/en not_active Abandoned

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