EP1503431A2 - Licht emittierendes Halbleiterbauelement - Google Patents

Licht emittierendes Halbleiterbauelement Download PDF

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Publication number
EP1503431A2
EP1503431A2 EP04017774A EP04017774A EP1503431A2 EP 1503431 A2 EP1503431 A2 EP 1503431A2 EP 04017774 A EP04017774 A EP 04017774A EP 04017774 A EP04017774 A EP 04017774A EP 1503431 A2 EP1503431 A2 EP 1503431A2
Authority
EP
European Patent Office
Prior art keywords
semiconductor light
thin film
light
emitting thin
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP04017774A
Other languages
English (en)
French (fr)
Other versions
EP1503431A3 (de
EP1503431B1 (de
Inventor
Hiroyuki Fujiwara
Mitsuhiko Ogihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Data Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Data Corp filed Critical Oki Data Corp
Publication of EP1503431A2 publication Critical patent/EP1503431A2/de
Publication of EP1503431A3 publication Critical patent/EP1503431A3/de
Application granted granted Critical
Publication of EP1503431B1 publication Critical patent/EP1503431B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

Definitions

  • the present invention relates to a surface light-emitting type semiconductor light-emitting device such a double hetero LED or a laser, to an LED head including the semiconductor light-emitting device, to an image-forming apparatus including the semiconductor light-emitting device, and to a method of manufacturing the semiconductor light-emitting device.
  • a semiconductor light-emitting device wherein a light-reflecting film, semiconductor light-emitting layer and anode electrode are laminated successively on an electrically conducting plate (cathode electrode) has been proposed in, for example, Japanese Patent Application Laid-Open Publication No. 2002-217450 (pp. 5 - 7, Fig. 1), which is referred to "Patent Reference 1."
  • This semiconductor light-emitting device has a surface light-emitting construction wherein light which has been generated in an active layer of the semiconductor light-emitting device and radiated through all azimuths, is directly or after reflection via a light-reflecting film, extracted via the main surface on the anode electrode side of the semiconductor light-emitting layer.
  • the spectral distribution largely varies due to scatter in the film thickness of the semiconductor light-emitting layer or the reflectivity of the optically reflecting surfaces, and therefore there is a large scatter in the light-emitting properties of the semiconductor light-emitting device due to manufacturing error.
  • a semiconductor light-emitting device includes a semiconductor light-emitting thin film having a first surface and a second surface arranged facing in opposite directions; a first optically reflecting surface disposed on the first surface of the semiconductor light-emitting thin film; and a second optically reflecting surface disposed on the second surface of the semiconductor light-emitting thin film, wherein light generated in the semiconductor light-emitting thin film passes through the first surface and is then emitted.
  • the thickness h satisfies a following conditional equation: 0.9 ⁇ (2m + 1) ⁇ 0 4n ⁇ h ⁇ 1.1 ⁇ (2m + 1) ⁇ 0 4n and m in the conditional equation (1) satisfies a following conditional equation: 2m + 1 m(m +1) ⁇ 0 2 > ⁇ .
  • the thickness of a semiconductor light-emitting thin film is set to a value at which interference between light rays extracted from a first surface of the semiconductor light-emitting thin film does not occur, i.e., the thickness of the semiconductor light-emitting thin film is set to a value at which the variations in light-emitting properties due to scatter in the thickness of the semiconductor light-emitting thin film are small, so the scatter in light-emitting properties between different semiconductor light-emitting devices or between plural light-emitting parts in the same semiconductor light-emitting device, can be reduced.
  • FIG. 1 is a cross-sectional view schematically showing the construction of a semiconductor light-emitting device according to a first embodiment of the present invention.
  • the semiconductor light-emitting device according to the first embodiment includes a support 10, a metal layer 11 provided on the support 10, an LED epitaxial film (also referred to as "LED epi-film") 20 which is a semiconductor light-emitting thin film disposed on the metal layer 11, and an electrode 30 disposed on the LED epitaxial film 20.
  • LED epi-film also referred to as "LED epi-film”
  • the support 10 may, for example, include a dielectric such as glass, a semiconductor such as Si (silicon), or a conductor such as Al (aluminum).
  • the thickness of the support 10 may be given a value, for example, within a range of 10 ⁇ m - 18 ⁇ m.
  • the metal layer 11 may be formed from an electrically conducting metal such as Al or the like. However, the metal layer 11 can also be formed from another electrically conducting material which can be ohmically connected to the LED epitaxial film 20. Also, a surface 11a (the upper surface in FIG. 1) of the metal layer 11 is an optically reflecting surface.
  • the LED epitaxial film 20 is disposed so that its second surface 20b (the lower surface in FIG. 1) is superimposed on the surface 11a of the metal layer 11.
  • the LED epitaxial film 20 may have a construction wherein, for example, an n-GaAs contact layer 21, an n-Al x Ga 1-x As cladding layer 22, an Al y Ga 1-y As active layer 23, a p-Al z Ga 1-z As cladding layer 24, and a p-GaAs contact layer 25 are laminated together.
  • the center wavelength of the light emission spectrum at this time is approximately 760 nm.
  • the electrode 30 is disposed such that its lower surface 30a is superimposed on the first surface 20a (the upper surface in FIG. 1) of the LED epitaxial film 20.
  • the electrode 30 is a metal electrode
  • the lower surface 30a of the electrode 30 is an optically reflecting surface.
  • the electrode 30 may, for example, be a laminated film of Ti/Pt/Au.
  • the electrode 30 may also be formed from another electrically conducting material which can be ohmically connected to the LED epitaxial film 20.
  • light generated in the active layer 23 of the LED epitaxial film 20 is directly, or after one or more reflections by the surface (optically reflecting surface) 11a of the metal layer 11 and the lower surface (optically reflecting surface) 30a of the electrode 30, emitted via a first surface (light-extracting surface) 20a of the LED epitaxial film 20.
  • the thickness h of the LED epitaxial film 20 is set to a value such that the LED epitaxial film 20 does not interfere with the light extracted from the first surface 20a of the LED of the epitaxial film 20.
  • the LED epitaxial film 20 is formed so that the thickness h of the LED epitaxial film 20 satisfies the conditional equation (1): 0.9 ⁇ (2m + 1) ⁇ 0 4n ⁇ h ⁇ 1.1 ⁇ (2m + 1) ⁇ 0 4n wherein m in the conditional equation (1) satisfies the conditional equation (2): 2 m + 1 m (m + 1) ⁇ 0 2 > ⁇
  • ⁇ 0 is the light emission center wavelength of the light generated by the LED epitaxial film 20
  • n is the refractive index of the LED epitaxial film 20
  • h is the thickness of the LED epitaxial film 20 (i.e., the distance between the first surface 20a and second surface 20b)
  • m is 0 or a positive integer
  • ⁇ is the half bandwidth of the light emission spectrum when there is no interference between the light rays generated by the LED epitaxial film 20.
  • the numbers "0.9” and "1.1” in the conditional equation (1) are degrees of tolerance taking account of the manufacturing error (normally, within ⁇ 10 %) of the LED epitaxial film 20.
  • n 3.4, ⁇ 0 - 760 nm and ⁇ is of the order of 40 nm.
  • equation (2) the following equation (4) holds: m ⁇ - ( ⁇ - ⁇ 0 ) + ( ⁇ - ⁇ 0 ) 2 - 2 ⁇ (- ⁇ 0 ) 2 ⁇ so m is a positive integer satisfying: 0 ⁇ m ⁇ 9+ 181 2 or zero.
  • m can be any of the values 0, 1, 2, ..., 18. Therefore, the thickness h may be set to a value satisfying the conditional equation (1).
  • the thickness h of the LED epitaxial film 20 is set to a value at which interference between the light rays extracted from the first surface 20a of the LED epitaxial film 20 does not occur.
  • the thickness h of the LED epitaxial film 20 is set to a value at which variations in light-emission properties due to scatter in the thickness h of the LED epitaxial film 20 are small.
  • FIG. 2 is a drawing describing the process of deducing the conditional equations (3) and (2).
  • h is the thickness of the LED epitaxial film
  • P O is the position of a light-emitting part (light source) in the LED epitaxial film
  • ⁇ is the incidence angle of a light ray P O P C generated in the light-emitting part P O and incident on the light extracting surface 20a of the LED epitaxial film
  • ⁇ ' is the emergence angle (refraction angle) of a light ray P C P A incident at the incidence angle ⁇ on the light extracting surface 20a of the LED epitaxial film
  • n is the refractive index of the LED epitaxial film
  • n' is the refractive index of air.
  • the interference light equation is given by the following equation (6):
  • the amplitude at this time is ⁇ - ⁇ cos ⁇ + i ⁇ sin ⁇ .
  • 2 ⁇ 2 (1 + ⁇ 2 - 2 ⁇ cos ⁇ )
  • equation (7) can be modified to give equation (8) :
  • FIG. 3 is a diagram showing the light emission spectrum when m is 2 and 40 in the semiconductor light-emitting device according to the first embodiment.
  • FIG. 3 shows the square of the absolute value of the amplitude "A" of the interference light, i.e.,
  • 2 the value of
  • 2 at a wavelength of ⁇ ⁇ 0 is the same even if m varies.
  • the broken line in FIG. 3 when m increases to some extent, small peaks (in FIG. 3, for example, this is in the vicinity of 745 nm and 775 nm) appear in the spectrum.
  • the value of m is limited so that: ⁇ 2 - ⁇ 1 > ⁇ Specifically, f( ⁇ ) is only given a period less than one period within the spectral half bandwidth ⁇ .
  • the upper limiting value of h is determined from the value of m thus determined.
  • FIGs. 5A to 5C are cross-sectional views schematically showing the method of manufacturing the semiconductor light-emitting device according to the first embodiment.
  • FIGs. 5A to 5C show the epitaxial liftoff (ELO) method.
  • ELO epitaxial liftoff
  • the sacrificial layer 41 is selectively etched alone by, for example, 10% HF solution, and the LED epitaxial film 20 is thereby separated from the GaAs substrate 40.
  • the LED epitaxial film 20 is stuck to the metal layer 11 formed on an LED epitaxial film sticking area of the substrate 10.
  • the sticking may, for example, be performed by filling a small amount of pure water between the LED epitaxial film 20 and the metal layer 11, and drying the pure water while pressing the LED epitaxial film 20 against the metal layer 11. Subsequently, in order to strengthen the bond, sintering may also be performed at a temperature of about 200 ° C.
  • the stuck LED epitaxial film 20 is etched to a desired shape if required by wet etching or the like.
  • the etchant used for this purpose may, for example, be phosphoric acid perhydrate.
  • the electrode 30 is formed as shown in FIG. 1 using, for example, the liftoff method.
  • the GaAs substrate used in the process for forming the LED epitaxial film 20 can be reused, so costs can be reduced. It may be noted that, instead of the epitaxial liftoff method, the GaAs substrate (substrate corresponding to the GaAs substrate 40 in FIG. 5) can be removed also by polishing (e.g., as disclosed on page 8 of Patent Reference 1).
  • the LED epitaxial film 20 was formed from a GaAs layer and an AlGaAs layer, but the LED epitaxial film 20 can also be formed from GaP.
  • the emission light center wavelength ⁇ 0 in this case is 700 nm
  • the refractive index n is 3.299
  • the half bandwidth ⁇ is 100 nm.
  • m is given by 0 ⁇ m ⁇ 3 + ⁇ 10, or 0. Therefore, m can be given any of the values 0, 1, 2, ..., 6. Therefore, the thickness h can be made a value satisfying the aforesaid conditional equation (1).
  • the desired thickness h calculated from the aforesaid conditional equation (3) is 53.0 nm when m is 0, 159.1 nm when m is 1, and 265.2 nm when m is 2. It can be calculated in the same way when m is 3 to 5, and is 689.6 nm when m is 6.
  • FIG. 6 is a perspective view schematically showing the construction of a semiconductor light-emitting device according to a second embodiment of the present invention.
  • FIG. 7 is a cross-sectional view schematically showing a section through a line S 7 -S 7 in FIG. 6.
  • identical symbols are assigned to identical or corresponding parts of the construction of FIG. 1.
  • the semiconductor light-emitting device includes a support 10, a metal layer 11 provided on the support 10, plural LED epitaxial films 20 (in FIG. 6, four are shown but the invention is not limited to four) arranged in one row on the metal layer 11, an insulating film 26 disposed on the LED epitaxial film 20, and an electrode 30 connected on the LED epitaxial film 20 via a contact hole 26a formed in the insulating film 26.
  • the electrode 30 is connected to an electrode pad 31 disposed on the insulating film 26.
  • the semiconductor light-emitting device according to the second embodiment has an identical construction to the semiconductor light-emitting device of the first embodiment, and satisfies the aforesaid conditional equations (1) and (2), or the conditional equations (3) and (2).
  • the light emitted by the LED epitaxial film 20 can be extracted via the contact hole 26a.
  • the thickness may be arranged to be 1000 Angstrom.
  • the contact hole 26a in the insulating film 26 can be formed using a photolithography technique.
  • the electrode pad 31 of the electrode 30 is preferably formed by a common manufacturing process.
  • the scatter in light emission properties between different semiconductor light-emitting devices can be reduced. Also, in the semiconductor light-emitting device according to the second embodiment, the scatter in light emission properties between different light-emitting parts in the semiconductor light-emitting device, can be reduced.
  • FIG. 8 is a cross-sectional view schematically showing the construction of an LED head according to a third embodiment of the present invention.
  • an LED head 60 includes a base member 61, an LED unit 62 fixed on the base member 61, a rod lens array 63 including pillar-shaped optical elements arranged in plural rows, a holder 64 which holds the rod lens array 63, and a clamp 65 which fixes these structures 61 - 64.
  • the LED unit 62 includes an LED array chip (or LED/driving-IC chip) 62a.
  • the LED array chip 62a includes one or more of the semiconductor light-emitting devices of the first or second embodiments arranged in plural rows. Light generated by the LED array chip 62a is emitted outside via the rod lens array 63.
  • the LED head 60 is used as a light exposure device for forming an electrostatic latent image in an electrophotographic printer or an electrophotographic copier.
  • the construction of the LED head including the semiconductor light-emitting device of the first or second embodiments is not limited to that shown in FIG. 8.
  • FIG. 9 is a cross-sectional view schematically showing the construction of an image-forming apparatus according to a fourth embodiment of the present invention.
  • the image-forming apparatus includes four process units 71a - 71d which form images of the four colors yellow, magenta, cyan and black using an electrophotographic technique.
  • the process units 71a - 71d are tandem-type and disposed along a transport path of a recording medium 70.
  • the process units 71a - 71d include a photosensitive drum 72 as an image carrier, a charging device 73 disposed near the photosensitive drum 72 which charges the surface of the photosensitive drum 72, and an exposure device 74 which selectively irradiates the surface of the charged photosensitive drum 72 so as to form an electrostatic latent image thereupon.
  • the exposure device 74 may be the LED head 60 described in the third embodiment, and the LED head 60 contains the semiconductor light-emitting device described in the first or second embodiments.
  • the image-forming apparatus further houses a developing device 75 which transports toner to the surface of the photosensitive drum 72 on which the electrostatic latent image is formed, and a cleaning device 76 which removes toner remaining on the surface of the photosensitive drum 72.
  • the each photosensitive drum 72 rotates in the direction of the arrow due to a drive mechanism including a power supply and gears, not shown.
  • the image-forming apparatus further includes a paper cassette 77 for housing the recording medium 70 such as paper or the like, and a hopping roller 78 which separates and transports the recording medium 70 one sheet at a time.
  • hopping roller 78 Downstream of the hopping roller 78 in the transport direction of the recording medium 70, pinch rollers 80a and 80b, and resist rollers 79a and 79b which grip the recording medium 70 and correct any skew of the recording medium 70 together with the pinch rollers 80a and 80b, and transport it to the process units 71a - 71d, are provided.
  • the hopping roller 78 and resist rollers 79a and 79b rotate in synchronism with the power supply, not shown.
  • the image-forming apparatus further includes transfer rollers 81 disposed opposite the photosensitive drum 72.
  • the transfer rollers 81 are formed of semi electrically-conducting rubber or the like.
  • the potential of the photosensitive drum 72 and the potential of the transfer rollers 81 are set so that the toner image on the photosensitive drum 72 is transferred to the recording medium 70.
  • the image-forming apparatus also includes a fixing device 82 which heats, pressurizes and fixes the toner image on the recording medium 70, and ejection rollers 83 and 84 which eject the recording medium 70 which has passed through the fixing device 82.
  • the recording medium 70 stacked in the paper cassette 77 is separated and transported one sheet at a time by the hopping roller 78.
  • the recording medium 70 passes through the resist rollers and pinch rollers, and passes through the process units 71a - 71d in that order.
  • the recording medium 70 passes between the photosensitive drum 72 and transfer roller 81 so that toner of each color is transferred in sequence, and heated and pressurized by the fixing unit 82 so that a toner image of each color is fixed on the recording medium.
  • the recording medium 70 is ejected into a stacker part 85 by the eject roller.
  • the construction of the image-forming apparatus including the semiconductor light-emitting device of the first or second embodiments, or the LED head of the third embodiment, is not limited to that shown in FIG. 9.

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  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Devices (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Led Device Packages (AREA)
EP04017774A 2003-07-31 2004-07-27 Licht emittierendes Halbleiterbauelement Expired - Lifetime EP1503431B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003283466 2003-07-31
JP2003283466A JP4315760B2 (ja) 2003-07-31 2003-07-31 半導体発光装置、ｌｅｄヘッド、画像形成装置、及び半導体発光装置の製造方法

Publications (3)

Publication Number Publication Date
EP1503431A2 true EP1503431A2 (de) 2005-02-02
EP1503431A3 EP1503431A3 (de) 2007-09-12
EP1503431B1 EP1503431B1 (de) 2009-04-01

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EP04017774A Expired - Lifetime EP1503431B1 (de) 2003-07-31 2004-07-27 Licht emittierendes Halbleiterbauelement

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US (1) US7242026B2 (de)
EP (1) EP1503431B1 (de)
JP (1) JP4315760B2 (de)
DE (1) DE602004020300D1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114144309A (zh) * 2019-07-24 2022-03-04 三星显示有限公司 喷墨印刷装置、用于使双极元件对准的方法和制造显示装置的方法

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
JP2007019313A (ja) * 2005-07-08 2007-01-25 Seiko Epson Corp 光素子および光モジュール
US7843060B2 (en) * 2007-06-11 2010-11-30 Cree, Inc. Droop-free high output light emitting devices and methods of fabricating and operating same
KR101459764B1 (ko) 2008-01-21 2014-11-12 엘지이노텍 주식회사 질화물계 발광 소자
JP2009212394A (ja) * 2008-03-05 2009-09-17 Oki Data Corp 半導体装置、ｌｅｄヘッド及び画像形成装置
EP2355151A3 (de) * 2010-01-29 2015-12-30 Oki Data Corporation Halbleiterlichtemissionsvorrichtung und Bildgebungsvorrichtung
JP2014154559A (ja) * 2013-02-04 2014-08-25 Fuji Xerox Co Ltd 半導体発光素子、光源ヘッド、及び画像形成装置

Citations (5)

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Publication number Priority date Publication date Assignee Title
EP0430041A1 (de) * 1989-11-22 1991-06-05 Daido Tokushuko Kabushiki Kaisha Lichtemittierende Diode mit lichtreflektierender Schicht
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US20020190260A1 (en) * 1999-12-22 2002-12-19 Yu-Chen Shen Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
EP1276158A2 (de) * 2001-07-11 2003-01-15 LumiLeds Lighting U.S., LLC Leuchtdiode mit reduzierter Variation der Fernfeldstrahlung
DE10246891A1 (de) * 2001-10-11 2003-04-24 Lumileds Lighting Us Selektive Anordnung von Quantentöpfen in Licht emittierenden Flip-Chip-Dioden zur verbesserten Lichtextraktion

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JP3014341B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有したダイオード
US6097041A (en) * 1998-08-24 2000-08-01 Kingmax Technology Inc. Light-emitting diode with anti-reflector
JP2002217450A (ja) 2001-01-22 2002-08-02 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP4242097B2 (ja) * 2002-01-08 2009-03-18 シャープ株式会社 画像形成装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0430041A1 (de) * 1989-11-22 1991-06-05 Daido Tokushuko Kabushiki Kaisha Lichtemittierende Diode mit lichtreflektierender Schicht
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US20020190260A1 (en) * 1999-12-22 2002-12-19 Yu-Chen Shen Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
EP1276158A2 (de) * 2001-07-11 2003-01-15 LumiLeds Lighting U.S., LLC Leuchtdiode mit reduzierter Variation der Fernfeldstrahlung
DE10246891A1 (de) * 2001-10-11 2003-04-24 Lumileds Lighting Us Selektive Anordnung von Quantentöpfen in Licht emittierenden Flip-Chip-Dioden zur verbesserten Lichtextraktion

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114144309A (zh) * 2019-07-24 2022-03-04 三星显示有限公司 喷墨印刷装置、用于使双极元件对准的方法和制造显示装置的方法
CN114144309B (zh) * 2019-07-24 2024-04-02 三星显示有限公司 喷墨印刷装置、用于使双极元件对准的方法和制造显示装置的方法

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DE602004020300D1 (de) 2009-05-14
JP2005051138A (ja) 2005-02-24
US20050023539A1 (en) 2005-02-03
JP4315760B2 (ja) 2009-08-19
EP1503431A3 (de) 2007-09-12
EP1503431B1 (de) 2009-04-01
US7242026B2 (en) 2007-07-10

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