EP1473755B1 - Vorrichtung und Verfahren zur Steuerung einer Dosis von von einem Mikroemitter emittierten Elektronen - Google Patents

Vorrichtung und Verfahren zur Steuerung einer Dosis von von einem Mikroemitter emittierten Elektronen Download PDF

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Publication number
EP1473755B1
EP1473755B1 EP04101249A EP04101249A EP1473755B1 EP 1473755 B1 EP1473755 B1 EP 1473755B1 EP 04101249 A EP04101249 A EP 04101249A EP 04101249 A EP04101249 A EP 04101249A EP 1473755 B1 EP1473755 B1 EP 1473755B1
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Prior art keywords
micro
current
electrons
module
emitter
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EP04101249A
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French (fr)
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EP1473755A2 (de
EP1473755A3 (de
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Jean-Luc Martin
Claude Bieth
Nicolas Delorme
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen

Definitions

  • the present invention relates to a device and a method for controlling and controlling a dose of electrons emitted by a micro-transmitter, for example by a microtip.
  • micro-transmitters of the micropoint type will be considered as nonlimiting examples.
  • microtips joined today by that of nanotubes, defines a field of applications both in the field of FED ("Field Emission Display”) displays and that of micro-transmitters, in which the requirements in terms of order and control of emitted flows are very severe.
  • FED Field Emission Display
  • the electrons acquire, by thermal agitation, a sufficient energy (called "work output") to reach above the potential barrier, which holds them back. to the nuclei. They then move towards the surface of the material and, if there is an electric field that attracts, they can be extracted from this material. At ordinary temperature, the thermal stirring energy is insufficient for the electrons to leave the material.
  • a tunnel effect allows the electrons to be extracted from the emitter (cathode) in a vacuum, then to be collected on an anode.
  • Transmitters working in cold emission are considered as voltage-controlled current sources, the flow of electrons emitted obeying the Fowler-Nordheim equations.
  • FIG. 1A This is for example the case of a microtip 10 Tungsten, used in electron emitter. His electrical diagram is represented on the Figure 1A . An electron flow is established between the anode 11 and the cathode 12. A control voltage is applied between the extraction grid 13, called gate, and the cathode 12.
  • Figure 1B presents the behavioral symbol of such a microtip 10 usable with a generic electric simulator ("Spice" type).
  • the emission regime of such a microtip 10 is characterized by a strong non-linearity of the emission current I tip as a function of the voltage applied to the extraction grid 13.
  • the coefficients a fn and b fn depend on the geometric characteristics of the microtip. Such a current-voltage characteristic is illustrated on the figure 2 .
  • the ideal characteristic is referenced 14.
  • One of the drawbacks of the cold emission is therefore to reveal a certain instability in the current value, which is equivalent to a noise that is generated by fluctuations in the output work inherent in local surface contaminations. These fluctuations vary from one microtip to another and are also variable over time, for the same microtip.
  • the device of the invention is a circuit of this type, which is naturally faster and whose linearity defects noted are corrected, the HV extraction gate control circuits being independent of LV circuits for controlling the electric charge, which simplifies the implementation of the circuit and reduces the sensitivity to noise.
  • the specifications of the system must allow sequential persistence of the necessary instants to carry out the calibrations. Such an embodiment does not make it possible to correct imperfections of the electron beam whose frequency of recurrence is greater than the refreshing frequency of the calibrations.
  • the stability of the feedback port is essential and must be guaranteed most often at the cost of active compensation of the bandwidth of the looped system, and therefore to the detriment of its performance in speed.
  • a global method for conducting a low electrical charge check consists, by using a few configuration input variables, in defining the desired quantity of charge, interrupting the electron beam when such a desired dose has been reached ( "Dose control").
  • Dose control the quantity of electrical charges is defined a priori.
  • the device allowing such a control must operate on a peak current dynamics, including in particular the fluctuations of the current in time for the same microtip.
  • Such a method theoretically allows a very good linearity.
  • the use of real functional modules and the requirement of high frequency operation results in strong nonlinearities of the controlled electric charge as a function of the current regime.
  • a document of known art describes a two-dimensional array of miniature cathodes used as electron beam emitters, which are addressable numerically.
  • This network comprises an internal electronic focusing for each transmitter, a closed-loop electron dose control circuit for controlling each transmitter by precisely controlling the electron flow.
  • Such a circuit of Dose control connected to a transmitter, provides a dose, delivered during each write cycle, adapted despite transmitter-to-transmitter mismatch, temperature and aging effects.
  • This control circuit makes it possible to terminate the emission at a fixed dose and not at a fixed time. It is an integrated component and connected to the transmitter.
  • control circuit is a source of non-linearities. It also does not allow, for a linear or two-dimensional array of microtips, to compensate for the dispersion of doses emitted due to the current dispersions inherent in the microtips.
  • the object of the invention is to compensate for such nonlinearities so as to make the control device linear and usable, and to provide specific solutions for linear or two-dimensional devices.
  • the device of the invention comprises means for modulating in time the threshold voltage from the initialization signal so as to program a variable dose control over time such that the excess of electrons emitted during the initialization and extinction times is strictly compensated by a decrease over time of the programmed dose.
  • the device for controlling and controlling a dose of electrons emitted by a micro-transmitter illustrated on the figure 4 , consists of a microtip 10, with an anode 11, a cathode 12, and an extraction grid 13, capable of supplying a current when the voltage of the extraction grid 13 with respect to the cathode 12 becomes greater than the extraction voltage in the vacuum.
  • Spur capacitances 20 and 21 are inherent in the manufacture of such a microtip 10 in microtechnology.
  • This device is indeed applicable to an arrangement of several microtips either in the form of a linear arrangement (barette), or in the form of a two-dimensional arrangement (matrix). All combinations of arrangements are also possible.
  • This device can be realized in specific high-voltage technology, and can control the electron doses emitted with high rates.
  • This module 30 The role of this module 30 is to process the basic information available on the microtip 10 and to convert it into a quantity that can be compared to an input quantity, in order to take a decision on the number N of emitted electrons .
  • This module may advantageously consist of a CTIA amplifier ("capacitive transimpedance amplifier”) which performs a current-voltage conversion.
  • the input variable is then the cathode current of the microtip I c .
  • This amplifier is characterized by its conversion gain R which is expressed in Volt / e - . It consists of an amplifier 35, a feedback capacitor (C fb ) 36, and a resetting device 37.
  • This module is initialized by a start signal start at the beginning of the sequence, and obeys the data signal, as illustrated by the following table: Data Action 1 Issue of the microtip 0 No issue of the microtip
  • This module 33 is responsible for setting the extraction gate voltage necessary for the microtip to transmit the desired current synchronously with the appearance of the start signal. When the dose of electrons emitted has been reached (Vcom decision signal emitted by the comparator module 31). This module 33 cuts the flow by bringing the extraction gate voltage to a level such that the current electronics is diminished by several decades. These ignition and extinction values depend on the transconductance of the microtip and its geometric model. The control voltages can be switched from 20V to approximately 50V, which then requires the use of a specific high voltage technology (HVCMOS). The main function of this module 33 is therefore to perform the translation level [0-3v] to [20v-50v].
  • HVCMOS high voltage technology
  • the voltage V is obtained at the output of the sensor module 30 is proportional to the cathode current I c emitted by the microtip.
  • V1 the initialization voltage level
  • the overall duration of the current pulse is not linear as a function of the programmed current level. Indeed, because of parasitic capacitances 20 and 21 mentioned above, a switching of several tens of volts of the extraction grid 13 transiently disturbs the input of the sensor module 30 whose polarization must be maintained to avoid any saturation thereof. this. Such saturation would then require a significant time constant for a return to equilibrium and would not allow operation at high frequency. During this time maintaining the polarization of the 30 sensor module at the establishment of the electronic flow, electronic charges are already issued and are recorded in the overall balance of charges, although we can not measure because they depend on the level of current that is not known from the outset. Such a phenomenon is a first source of non-linearities.
  • the comparator module 31 has a delay in the decision-making inherent in any electronic module. During this delay, the microtip 10 continues to emit and there is therefore an additional extinguishing charge which is added to the overall balance of the charges emitted.
  • the figure 8 which represents a materialization of the error on the number N of programmed electrons, illustrates such a phenomenon. If one traces, as a function of time, the number of electrons emitted with respect to the number of electrons programmed, with constant delay, an error is noted on the number of electrons emitted which depends on the level of current.
  • the curve 45 corresponds to 2 * Iinom
  • the curve 46 corresponds to Iinom
  • the curve 47 corresponds to Iinom / 2
  • the curve 48 corresponds to the number of electrons emitted.
  • a first solution for compensating for such nonlinearities uses a comparison threshold that varies as a function of time. Simply send a ramp 50, or a "staircase", on the input V2 of the comparator module 31 as illustrated on the figure 9 .
  • the object of the invention is to compensate for such non-linearities by proposing other methods of compensation by controlling the cathode current I c and by feedback on the value of the threshold V 2.
  • the current reaches its nominal value I steady_state rapidly during the initialization time t start and that it is maintained during the extinction time t off , it is therefore at first constant order for the duration of the current pulse. Indeed, at the beginning, the V gate establishment time is short, and in the end, the logical gate delay and V gate delays are largely dominated by the delay of the comparator module 31 in decision making.
  • the predicted electron dose is fixed by N measure , but an excess dose is actually added because of non-zero initialization and extinction times.
  • the figure 12 illustrates a curve of the number of electrons emitted as a function of the current regime.
  • the number of electrons emitted should remain the same whatever the current I tip , as illustrated by the horizontal curve 56.
  • the curves 57 and 58 illustrate the number of electrons emitted respectively during the initialization and extinction times.
  • the sequencing can be such that the times t start and t off remain constant whatever the current, that is to say that the electrons emitted during these times t start and t off depend only on the current regime (affine function ).
  • the object of the device of the invention is to be able to accurately transmit a programmed number of electrons regardless of the current regime of the microtip and to interrupt the electron beam as soon as this value has been reached.
  • the sum of the electrons emitted during each of the times described above must therefore remain constant, ie the total number of electrons emitted is linear and constant, regardless of the peak current I tip .
  • the value of the threshold detection voltage V2 is modified during the electronic exposure.
  • the compensation is carried out on quantities of surplus electrons answering the law: I tip * t q e
  • FIGS. 13A and 13B respectively illustrate the theoretical curves 60 and measured 61 and the theoretical curves 60 and measured 61 'of the relative number of electrons as a function of the peak current I tip , respectively without compensation and with compensation as a function of the current.
  • Curve 61 ' illustrates the improvement that is desired by using such active compensation as a function of current.
  • the invention also relates to a linear or array device for controlling and controlling electron doses emitted by a set of micro-transmitters, which comprises, for each micro-transmitter, the different modules 30, 31, 32 and 33 as well as means for variations of the threshold voltage, as described above.
  • Such compensation is illustrated on the figure 14 . It does not cover all the needs. It is able to compensate for differences between microtips, but not for high frequency fluctuations on the same microtip. However, it can be used when it is certain that the frequency of recurrence of the current fluctuations is lower than the frequency of appearance of the programmed pulses.
  • the threshold voltage V2 is modulated in time from the start initialization signal so as to program a variable dose control over time such that the excess of electrons emitted during the phases t start and t off is strictly compensated. by the decrease over time of the programmed dose.
  • This temporal variation is controlled by the generator 65.
  • the figure 15 illustrates a simplified scheme of compensation according to the peak current.
  • a peak current detection module 67 is able to reproduce exactly the peak current or to introduce a gain (X) on this current, for example by means of a current mirror. It is this output current that is measured by the sensor module 30.
  • the decision on the time is always taken by the comparator module 31, but the decision threshold V2 is indexed on the instantaneous value of the emission current. This leads to an optimal compensation.
  • V2 to be programmed The capacity of the sensor block and the times ⁇ t start + t off ⁇ being known, the variation of V2 to be programmed is directly proportional to I.
  • this voltage R L * I must be added to the voltage Vref to stop, faster than in the ideal case (without Nstart and Nstop), the power of the micropoint and so his show.
  • Block 68 of the figure 15 can then for example be realized in the manner illustrated on the figure 16 .
  • the dimensions of the transistors are chosen to fulfill the specified function in a manner known to those skilled in the art.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Measuring Fluid Pressure (AREA)

Claims (8)

  1. Vorrichtung zum Anweisen und zur Regelung/Steuerung einer von einem Mikroemitter emittierten Elektronendosis, umfassend
    - ein Sensormodul (30), das den durch den Mikroemitter bereitgestellten Strom ebenso wie eine Spannung zum Einstellen des Polarisationspunktes der Vorrichtung empfängt,
    - ein Vergleichsmodul (31), das das Ausgangssignal des Sensormoduls ebenso wie eine Schwellenspannung empfängt, die die Regelung/Steuerung der Menge von zu emittierenden Elektronen erlaubt,
    - ein Logikmodul (32), das das Ausgangssignal von dem Vergleichsmodul (31) ebenso wie ein Startsignal zur Initialisierung der Elektronenemission und ein Logiksignal empfängt, um zu bestimmen, ob der Mikroemitter emittieren soll oder nicht,
    - ein Anweisungsmodul (33), das das Ausgangssignal des Logikmoduls empfängt, welches die Spannungen bereitstellt, welche zur Initialisierung und zum Beenden des Strompulses des Mikroemitters notwendig sind,
    dadurch gekennzeichnet, dass die Vorrichtung aufweist:
    - Mittel zur Variation der Schwellenspannung, so dass während der Emission von Elektronen die Summe S=Nstart+Nmeasure+Noff im Wesentlichen konstant bleibt, wobei Nstart die Anzahl von Elektronen zur Zeit der Initialisierung des Strompulses ist, wobei Nmeasure die Anzahl von Elektronen zur Zeit einer Messung dieses Strompulses ist und wobei Noff die Anzahl von Elektronen zur Zeit eines Beendens dieses Strompulses ist.
  2. Vorrichtung nach Anspruch 1, welche Mittel zur zeitlichen Modulation der Schwellenspannung (V2) ausgehend von dem Initialisierungssignal (start) umfasst, wobei eine zeitlich variable Elektronendosis-Regelung/Steuerung derart programmiert ist, dass der während der Initialisierungszeit (tstart) und der Beendungszeit (toff) emittierte Elektronenüberschuss vollständig oder teilweise durch eine Verringerung der programmierten Dosis im Laufe der Zeit kompensiert wird.
  3. Vorrichtung nach einem der Ansprüche 1 oder 2, umfassend:
    - ein Modul zur Detektion des Stroms des Mikroemitters (67), wobei das Modul dazu in der Lage ist, den Spitzenstrom Itip zu reproduzieren oder eine Verstärkung des Stroms bereitzustellen,
    - ein Modul zur Erzeugung einer variablen Spannung (68), das eine Ausgangsssollspannung V2=f(Itip) bereitstellt.
  4. Linear- oder Matrixvorrichtung zum Anweisen und zur Regelung/Steuerung von Elektronendosen, welche von einer Menge von Mikroemittern emittiert werden, für jeden Mikroemitter umfassend:
    - ein Sensormodul (30), das den durch den Mikroemitter bereitgestellten Strom ebenso wie eine Spannung zum Einstellen des Polarisationspunktes empfängt,
    - ein Vergleichsmodul (31), das das Ausgangssignal von dem Sensormodul ebenso wie eine Schwellenspannung empfängt, die die Regelung/Steuerung der Menge von zu emittierenden Elektronen erlaubt,
    - ein Logikmodul (32), das das Ausgangssignal von dem Vergleichsmodul (31) ebenso wie ein Startsignal zur Initialisierung der Elektronenemission und ein Logiksignal empfängt, um zu bestimmen, ob der Mikroemitter emittieren soll oder nicht,
    - ein Anweisungsmodul (33), das das Ausgangssignal des Logikmoduls empfängt, welches die Spannungen bereitstellt, welche zur Initialisierung und zum Beenden des Strompulses des Mikroemitters notwendig sind,
    dadurch gekennzeichnet, dass die Vorrichtung für jeden Mikroemitter aufweist:
    - Mittel zur Variation der Schwellenspannung, so dass während der Emission von Elektronen die Summe S=Nstart+Nmeasure+Noff im Wesentlichen konstant bleibt, wobei Nstart die Anzahl von Elektronen zur Zeit der Initialisierung des Strompulses ist, wobei Nmeasure die Anzahl von Elektronen zur Zeit einer Messung dieses Strompulses ist und wobei Noff die Anzahl von Elektronen zur Zeit eines Beendens dieses Strompulses ist.
  5. Vorrichtung nach einem der vorhergehenden Ansprüche, wobei jeder Mikroemitter eine Mikrospitze ist.
  6. Verfahren zum Anweisen und zur Regelung/Steuerung einer von einem Mikroemitter emittierten Elektronendosis, umfassend
    - einen Schritt zur Wandlung von durch den Mikroemitter bereitgestelltem Strom und eines Einstellens des Betriebspolarisationspunktes,
    - einen Schritt eines Vergleichs des erhaltenen Ausgangssignals des vorhergehenden Schritts mit einer Schwellenspannung, welche die Regelung/Steuerung der Menge von zu emittierenden Elektronen erlaubt,
    - einen Logikschritt zum Initialisieren der Elektronenemission und eines Logiksignals, um zu bestimmen, ob der Mikroemitter emittieren soll oder nicht,
    - einen Anweisungsschritt, der die Spannungen bereitstellt, welche zur Initialisierung und zum Beenden des Strompulses von dem Mikroemitter notwendig sind,
    dadurch gekennzeichnet, dass das Verfahren umfasst:
    - einen Schritt einer Variation der Schwellenspannung (V2), so dass während der Emission von Elektronen die Summe S=Nstart+Nmeasure+Noff im Wesentlichen konstant bleibt, wobei Nstart die Anzahl von Elektronen zur Zeit der Initialisierung des Strompulses ist, wobei Nmeasure die Anzahl von Elektronen zur Zeit einer Messung dieses Strompulses ist und wobei Noff die Anzahl von Elektronen zur Zeit eines Beendens dieses Strompulses ist.
  7. Verfahren nach Anspruch 6, umfassend einen Schritt einer zeitlichen Modulation der Schwellenspannung (V2) ausgehend von dem Initialisierungssignal (start), wobei eine zeitlich variable Elektronendosis-Regelung/Steuerung derart programmiert ist, dass der während der Initialisierungszeit (tstart) und der Beendungszeit (toff) emittierte Elektronenüberschuss vollständig oder teilweise kompensiert wird durch eine Verringerung der programmierten Dosis im Laufe der Zeit.
  8. Verfahren nach Anspruch 6, umfassend:
    - einen Schritt zur Detektion des Spitzenstroms, um den Spitzenstrom Itip zu reproduzieren oder eine Verstärkung des Stroms bereitzustellen,
    - einen Schritt zur Erzeugung einer variablen Spannung (68), in welchem eine Ausgangssollspannung V2=f(Itip) bereitstellt wird.
EP04101249A 2003-03-27 2004-03-25 Vorrichtung und Verfahren zur Steuerung einer Dosis von von einem Mikroemitter emittierten Elektronen Expired - Fee Related EP1473755B1 (de)

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FR0350071 2003-03-27
FR0350071A FR2853133B1 (fr) 2003-03-27 2003-03-27 Dispositif et procede de commande et de controle d'une dose d'electrons emise par un micro-emetteur

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EP1473755A2 EP1473755A2 (de) 2004-11-03
EP1473755A3 EP1473755A3 (de) 2008-11-12
EP1473755B1 true EP1473755B1 (de) 2011-08-31

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JP5110847B2 (ja) * 2005-10-18 2012-12-26 株式会社半導体エネルギー研究所 表示装置
EP1777690B1 (de) * 2005-10-18 2012-08-01 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
CN113036855B (zh) * 2021-03-12 2023-03-31 宁波美蕾电器有限公司 一种铅酸式多功能应急电源

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EP1426997A1 (de) * 2002-12-06 2004-06-09 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Feldemissionsstrahlenquelle und Strahlstromsteuerverfahren

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EP1473755A2 (de) 2004-11-03
US20040222391A1 (en) 2004-11-11
EP1473755A3 (de) 2008-11-12
FR2853133B1 (fr) 2005-04-29
JP2004295124A (ja) 2004-10-21
FR2853133A1 (fr) 2004-10-01
US7088048B2 (en) 2006-08-08

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