EP1460710A1 - Mikrowellenbauelement zur Dissipation oder Dämpfung von Leistung - Google Patents

Mikrowellenbauelement zur Dissipation oder Dämpfung von Leistung Download PDF

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Publication number
EP1460710A1
EP1460710A1 EP04290686A EP04290686A EP1460710A1 EP 1460710 A1 EP1460710 A1 EP 1460710A1 EP 04290686 A EP04290686 A EP 04290686A EP 04290686 A EP04290686 A EP 04290686A EP 1460710 A1 EP1460710 A1 EP 1460710A1
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EP
European Patent Office
Prior art keywords
resistive layer
region
substrate
resistive
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP04290686A
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English (en)
French (fr)
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EP1460710B1 (de
Inventor
André Fournier
Laurent Boillot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiall SA
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Radiall SA
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Publication date
Application filed by Radiall SA filed Critical Radiall SA
Publication of EP1460710A1 publication Critical patent/EP1460710A1/de
Application granted granted Critical
Publication of EP1460710B1 publication Critical patent/EP1460710B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/22—Attenuating devices
    • H01P1/227—Strip line attenuators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/24—Terminating devices
    • H01P1/26—Dissipative terminations
    • H01P1/268—Strip line terminations

Definitions

  • the subject of the present invention is a microwave device intended for power dissipation or attenuation.
  • the present invention relates in particular to a device forming a resistive load of medium to high power, that is to say of the order of a few Watts to 200 Watts, in particular for use in cellular radio base stations or local networks.
  • WLAN type wireless
  • Such a device used in a microwave system, is used in particular to dissipate, in the event of a malfunction, in the form of heat, the non-active energy of the system, in particular the energy transported in a microwave line.
  • Such a microwave line can be constituted by a dielectric substrate, one side of which carries a conductive strip and the other side of a metallic metal pad, the conductive strip being connected to a resistive layer deposited on the substrate.
  • This embodiment is generally designated by the term "microstrip".
  • the impedance of such a microwave line is generally 50 Ohms.
  • the resistive load device can be housed in a box connected to the system by a cable, which allows the device to be placed in contact with a cooling radiator. This device is commonly called remote load.
  • the device can be fixed directly to an item of equipment in the system, for example on a circuit thereof.
  • Patent EP 0 092 137 describes a resistive load device comprising an insulating substrate on which adjacent resistive layers are deposited in the form of sectors of a circle.
  • the external arc of a resistive layer constitutes the entry of the device and the internal arc the exit. This device aims to allow a uniform and greater dissipation of the calorific power.
  • Patent application FR 2 486 720 describes a device for terminating a microwave transmission line, comprising a dielectric substrate with, on one face, a resistive layer constituting a termination charge.
  • the resistive layer may have a trapezoid shape, the large base of which forms the entry for the microwave line and the small base of which is connected to a mass metallization.
  • a conductive strip, transverse can be deposited on the resistive layer, in contact with the conductive strip and connecting two metallizations intended to form two capacitors with a ground plane.
  • US Patent 6,326,862 describes an electrical termination system comprising a housing in which is disposed a dielectric substrate carrying a termination circuit element.
  • the housing has a first relatively high cavity, above the junction of the inner conductor of the coaxial cable on the dielectric substrate. This first cavity opens into a second cavity of lesser height. This double cavity aims to correct impedance faults.
  • US Patent 4,267,531 describes a device comprising a resistive film sandwiched between two dielectrics, on which sheets are arranged.
  • US Patent 4,965,538 describes an attenuator with a resistive region of rectangular shape to which two electrodes are connected.
  • the present invention aims in particular to propose a new microwave device, in particular a device forming a resistive load, of the “microstrip” type, making it possible to substantially reduce the impedance faults, and this, for a wide range of frequencies.
  • the first region may have a dimension transverse to the axis of the resistive layer, less than that of the second region.
  • the capacitive defect at the input of the resistive layer is reduced.
  • the or each first region of the resistive layer has a shape converging towards the conductive strip, this first region can for example be substantially trapezoidal, the conductive strip or strips being connected to the resistive layer by the small base of the trapezoid.
  • the entire resistive layer may have a substantially trapezoidal shape, in which case the mass zone is connected to this layer by the large base of the trapezoid.
  • the second region is substantially rectangular and the mass zone is connected to this region by one side of the rectangle.
  • the resistive layer comprises two first regions each connected to a conductive strip and to a second rectangular, central region, connected to the ground zone.
  • the invention makes it possible to reduce the impedance faults by covering the resistive layer, at least partially, by a ground plane connected to the ground zone and isolated from the resistive layer by an insulating layer.
  • the invention by combining the above-mentioned forms of the resistive layer and the presence of the ground plane above the resistive layer, a reduction in capacitance and induction defects is obtained, therefore better microwave adaptation, for frequencies of up to around 8 GHz.
  • the device according to the invention can have a relatively low cost price.
  • the ground plane does not entirely cover the entry region, being set back from the junction between the or a conductive strip and the or the resistive layers.
  • the ground plane can completely cover the second region of the resistive layer or layers.
  • the ground plane extends transversely over the entire width of the resistive layer or layers.
  • the aforementioned ground plane advantageously comes into electrical contact with this ground zone, behind the resistive layer.
  • the substrate carries, on either side of the resistive layer, two lateral conductive tracks connected to said ground zone, the ground plane covering these tracks.
  • the aforementioned ground plane is connected to lateral mass zones extending over the edges of the substrate, in particular those which are parallel to the axis of the resistive layer.
  • These lateral mass zones can be formed by metallizations made on these wafers.
  • the insulating layer can be a glass layer deposited for example by screen printing on the resistive layer.
  • the mass zone on the substrate can be connected to a mass range on the other face of the substrate in particular by one or more metallizations on a wafer of the substrate or, as a variant, by metallized holes made in the thickness of the substrate.
  • the device comprises an insert comprising a conductive wall which is applied to the insulating layer and defining the ground plane.
  • the insert comprises at least one lateral conductive arm connected to the ground plane and able to come to be applied on a wafer of the substrate and possibly, if necessary, on one the aforementioned lateral conductive tracks.
  • the insert can comprise at least one elastically deformable and conductive tab capable of coming to be applied to a wall of the box, thus ensuring the electrical connection between the ground plane of the device and the wall of the box.
  • the insert can also be arranged to retain the substrate on the bottom of the housing. In other words, it is not necessary to make a metallurgical connection, for example brazing, of the substrate on the bottom of the housing, its retention in the housing being mechanical in nature.
  • the substrate can then be devoid of metallization on its face opposite to that carrying the resistive layer, the ground plane being connected to the ground of the housing.
  • the insert can for example comprise at least one fixing part allowing its fixing in particular by brazing on a support.
  • the invention may include at least one elastically deformable and conductive tab capable of being applied to a wall of a housing.
  • the insert can comprise at least one fixing part allowing its fixing, in particular by soldering, on a support.
  • the first region has a dimension transverse to the longitudinal axis of the resistive layer, less than that of the second region.
  • the device can comprise two conductive strips and the resistive layer comprise two first trapezoidal regions each connected to a conductive strip and a second central rectangular region connected to the ground zone.
  • FIG. 1 shows a device 1 forming a microwave resistive load intended for power dissipation, comprising a resistive layer 2 deposited on a face 4 of an insulating substrate 3, the resistive layer 2 being connected, on the one hand, to a conductive strip 5 and, on the other hand, to a ground zone 6 also deposited on the face 4 of the insulating substrate 3.
  • the device 1 is intended to be used in a microwave system.
  • the substrate 3 can be made of ceramic, in particular alumina or aluminum nitride (A1N).
  • the substrate 3 forms with the conductive strip 5 and a mass area 8 located on a face 7 opposite to the face 4 a microwave line.
  • the mass range 8 can be mixed on a support, not shown.
  • the mass zone 6 can be connected to the mass range 8 by one or more metallizations produced on a wafer 3a of the substrate 3 or by metallized bores made in the thickness of the substrate 3.
  • the resistive layer 2 can be deposited on the substrate 3 by screen printing or in a thin layer for example.
  • the resistive layer 2 comprises an entry region 2a having a substantially isosceles trapezoidal shape, the conductive strip 5 being connected to this region 2a by the small base 10 of the trapezoid.
  • the region 2a is extended, on the side opposite to the small base 10, by a rectangular region 2b whose long side coincides with the large base of the trapezoid.
  • the mass zone 6 is connected to the resistive layer 2 along a long side 11 of the rectangle.
  • the resistive layer 2 has a longitudinal axis X which is, in the example considered, parallel to the conductive strip 5.
  • resistive layer 2 makes it possible in particular to reduce the capacitive faults at the input of the resistive layer.
  • the resistive layer 2 is entirely covered with an insulating layer 13, which is constituted for example by a layer of glass deposited by screen printing.
  • the ground plane 12 has a rectangular shape of length substantially equal to the width of the substrate.
  • the ground plane 12 covers the mass zone 6 and is set back from the small base 10 of the trapezoid.
  • the ground plane 12 completely covers the region 2b of the resistive layer 2 and leaves the junction part between the conductive strip 5 and the resistive layer 2 free.
  • the ground plane 12 is produced from a conductive paste deposited on the insulating layer 13.
  • the mass zone 6 can be connected to two lateral conductive tracks 14, 15, parallel to the axis X.
  • the ground plane 12 covers these tracks 14, 15, while being in contact with them.
  • the wafers 3a of the substrate 3 parallel to the axis X can be metallized and be electrically connected to the ground plane 12.
  • FIG. 4 shows a device 1 'forming a remote resistive load in accordance with an alternative embodiment of the invention.
  • the device 1 ' is housed in a housing 20, which can be moved away from the microwave system to be brought into contact with a cooling radiator in particular.
  • the device 1 'differs from the device 1 previously described in that the ground plane does not consist of a layer of conductive material deposited on the substrate, but is defined by a central wall 23 of a metal insert 22 being applied to the substrate 3.
  • the conductive strip 5 is intended to be connected to the central conductor of a coaxial cable 21 mounted, at one end, on the housing 20.
  • the insert 22 comprises on either side of the central wall 23 two lateral arms 24 intended to come to be applied on two parallel edges of the substrate 3 and on the conductive tracks 14, 15. These arms 24 each comprise a portion 24a vertical applied to a section of the substrate 3.
  • the insert 22 has on its upper face an elastically deformable and conductive lug 25 capable of being applied to a conductive cover 26 of the housing 20. According to the invention, it is possible to provide several conductive lugs 25.
  • the resistive layer 2 is obtained by depositing a conductive paste on the substrate 3.
  • the insert 22 in the example considered, allows the substrate 3 to be held on the bottom of the housing 20, this holding being mechanical in nature.
  • the tab (s) 25 also make it possible to make electrical contact between the ground zone 6 and the housing 20.
  • the insert 22 ′ can be devoid of elastically deformable tab 25 and its lateral arms 24 ′ include extensions 31 allowing braze the insert 22 on a support 30.
  • This support 30 may consist of a circuit or a metal flange fixed to the equipment of the system, for example.
  • the microwave device according to the invention can also be arranged as an attenuator.
  • An embodiment of a device forming an attenuator is illustrated in FIG. 6.
  • the resistive layer 2 ′ has a symmetrical configuration comprising two trapezoidal regions 2 ′ a connected by their large bases to the long sides of a rectangular central region 2 ′ b whose short sides are connected to the ground.
  • the trapezoidal regions 2'b are connected by their small bases to conductive strips 5.
  • a ground plane is not provided, which does not entirely cover the resistive layer 2 '.

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  • Non-Reversible Transmitting Devices (AREA)
EP04290686.7A 2003-03-19 2004-03-12 Mikrowellenbauelement zur Dissipation oder Dämpfung von Leistung Expired - Lifetime EP1460710B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0303339 2003-03-19
FR0303339A FR2852738A1 (fr) 2003-03-19 2003-03-19 Dispositif hyperfrequence destine a la dissipation ou a l'attenuation de puissance.

Publications (2)

Publication Number Publication Date
EP1460710A1 true EP1460710A1 (de) 2004-09-22
EP1460710B1 EP1460710B1 (de) 2014-05-21

Family

ID=32799688

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04290686.7A Expired - Lifetime EP1460710B1 (de) 2003-03-19 2004-03-12 Mikrowellenbauelement zur Dissipation oder Dämpfung von Leistung

Country Status (3)

Country Link
US (1) US7161244B2 (de)
EP (1) EP1460710B1 (de)
FR (1) FR2852738A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007022906A2 (de) * 2005-08-26 2007-03-01 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Hf-abschlusswiderstand mit einer planaren schichtstruktur
WO2008071271A1 (de) * 2006-12-12 2008-06-19 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Hf-abschlusswiderstand in flanschbauweise

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8441774B2 (en) * 2007-03-08 2013-05-14 Nec Corporation Capacitance element, printed circuit board, semiconductor package, and semiconductor circuit
US20090015355A1 (en) * 2007-07-12 2009-01-15 Endwave Corporation Compensated attenuator
DE202008009225U1 (de) * 2008-07-09 2008-09-18 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Streifenleitung mit Durchkontaktierung
US8207796B2 (en) * 2009-10-20 2012-06-26 Delphi Technologies, Inc. Stripline termination circuit having resonators
JP2019121311A (ja) * 2018-01-11 2019-07-22 シャープ株式会社 基板、表示装置及び基板の製造方法
US11430587B2 (en) 2019-01-15 2022-08-30 Smiths Interconnect Americas, Inc. High frequency spiral termination
CN111168721B (zh) * 2020-03-11 2023-09-26 深圳市筑汀智能科技有限公司 一种机器人输送系统中的接地地板块

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1326661A (en) * 1970-07-07 1973-08-15 Thomson Csf Resistive loads used in microwave circuits
US4267531A (en) * 1976-08-03 1981-05-12 Georg Spinner High-frequency terminating impedance
US4672336A (en) * 1984-05-11 1987-06-09 Marconi Instruments Limited Attenuators
US4965538A (en) * 1989-02-22 1990-10-23 Solitron Devices, Inc. Microwave attenuator
JPH04125903A (ja) * 1990-09-17 1992-04-27 Hirose Electric Co Ltd 高周波用終端抵抗器
JPH08279704A (ja) * 1995-04-04 1996-10-22 Advantest Corp 終端器用抵抗素子

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US4567531A (en) * 1982-07-26 1986-01-28 Discovision Associates Vertical interval signal encoding under SMPTE control
FR2574570A1 (fr) * 1984-12-07 1986-06-13 Thomson Csf Procede de photolithographie d'une couche epaisse de pate deposee sur un substrat
US4670723A (en) * 1985-03-18 1987-06-02 Tektronix, Inc. Broad band, thin film attenuator and method for construction thereof
US5822196A (en) * 1996-06-05 1998-10-13 Compaq Computer Corporation Securing a card in an electronic device
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1326661A (en) * 1970-07-07 1973-08-15 Thomson Csf Resistive loads used in microwave circuits
US4267531A (en) * 1976-08-03 1981-05-12 Georg Spinner High-frequency terminating impedance
US4672336A (en) * 1984-05-11 1987-06-09 Marconi Instruments Limited Attenuators
US4965538A (en) * 1989-02-22 1990-10-23 Solitron Devices, Inc. Microwave attenuator
JPH04125903A (ja) * 1990-09-17 1992-04-27 Hirose Electric Co Ltd 高周波用終端抵抗器
JPH08279704A (ja) * 1995-04-04 1996-10-22 Advantest Corp 終端器用抵抗素子

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 016, no. 385 (E - 1249) 17 August 1992 (1992-08-17) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 02 28 February 1997 (1997-02-28) *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007022906A2 (de) * 2005-08-26 2007-03-01 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Hf-abschlusswiderstand mit einer planaren schichtstruktur
WO2007022906A3 (de) * 2005-08-26 2007-04-19 Rosenberger Hochfrequenztech Hf-abschlusswiderstand mit einer planaren schichtstruktur
US7834714B2 (en) 2005-08-26 2010-11-16 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg HF terminating resistor having a planar layer structure
NO338161B1 (no) * 2005-08-26 2016-08-01 Rosenberger Hochfrequenztechnik Gmbh & Co HF termineringsmotstand som har en plan lagstruktur
WO2008071271A1 (de) * 2006-12-12 2008-06-19 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Hf-abschlusswiderstand in flanschbauweise
US8054157B2 (en) 2006-12-12 2011-11-08 Rosenberger Hochfrequenztechnik Gmbh & Co., Kg RF terminating resistor of flanged construction

Also Published As

Publication number Publication date
FR2852738A1 (fr) 2004-09-24
EP1460710B1 (de) 2014-05-21
US7161244B2 (en) 2007-01-09
US20040227232A1 (en) 2004-11-18

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