EP1399958A4 - Procede de formation de liaisons fusibles - Google Patents

Procede de formation de liaisons fusibles

Info

Publication number
EP1399958A4
EP1399958A4 EP02744765A EP02744765A EP1399958A4 EP 1399958 A4 EP1399958 A4 EP 1399958A4 EP 02744765 A EP02744765 A EP 02744765A EP 02744765 A EP02744765 A EP 02744765A EP 1399958 A4 EP1399958 A4 EP 1399958A4
Authority
EP
European Patent Office
Prior art keywords
fusible links
forming fusible
forming
links
fusible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02744765A
Other languages
German (de)
English (en)
Other versions
EP1399958A1 (fr
Inventor
Hans-Joachim Barth
Llyod G Burrell
Gerald R Friese
Michael Stetter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Infineon Technologies North America Corp
Original Assignee
International Business Machines Corp
Infineon Technologies North America Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp, Infineon Technologies North America Corp filed Critical International Business Machines Corp
Publication of EP1399958A1 publication Critical patent/EP1399958A1/fr
Publication of EP1399958A4 publication Critical patent/EP1399958A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
EP02744765A 2001-06-28 2002-06-27 Procede de formation de liaisons fusibles Withdrawn EP1399958A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/894,337 US6559042B2 (en) 2001-06-28 2001-06-28 Process for forming fusible links
US894337 2001-06-28
PCT/US2002/020749 WO2003003443A1 (fr) 2001-06-28 2002-06-27 Procede de formation de liaisons fusibles

Publications (2)

Publication Number Publication Date
EP1399958A1 EP1399958A1 (fr) 2004-03-24
EP1399958A4 true EP1399958A4 (fr) 2010-08-25

Family

ID=25402938

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02744765A Withdrawn EP1399958A4 (fr) 2001-06-28 2002-06-27 Procede de formation de liaisons fusibles

Country Status (7)

Country Link
US (1) US6559042B2 (fr)
EP (1) EP1399958A4 (fr)
JP (1) JP2005529477A (fr)
CN (1) CN1315166C (fr)
DE (1) DE10226571A1 (fr)
TW (1) TW583750B (fr)
WO (1) WO2003003443A1 (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664141B1 (en) * 2001-08-10 2003-12-16 Lsi Logic Corporation Method of forming metal fuses in CMOS processes with copper interconnect
US6926926B2 (en) * 2001-09-10 2005-08-09 Applied Materials, Inc. Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
KR100429881B1 (ko) * 2001-11-02 2004-05-03 삼성전자주식회사 셀 영역 위에 퓨즈 회로부가 있는 반도체 소자 및 그제조방법
US6479308B1 (en) * 2001-12-27 2002-11-12 Formfactor, Inc. Semiconductor fuse covering
US6661085B2 (en) * 2002-02-06 2003-12-09 Intel Corporation Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stack
US6887769B2 (en) * 2002-02-06 2005-05-03 Intel Corporation Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same
US6975016B2 (en) 2002-02-06 2005-12-13 Intel Corporation Wafer bonding using a flexible bladder press and thinned wafers for three-dimensional (3D) wafer-to-wafer vertical stack integration, and application thereof
US6762076B2 (en) * 2002-02-20 2004-07-13 Intel Corporation Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
US6709980B2 (en) * 2002-05-24 2004-03-23 Micron Technology, Inc. Using stabilizers in electroless solutions to inhibit plating of fuses
US6737345B1 (en) * 2002-09-10 2004-05-18 Taiwan Semiconductor Manufacturing Company Scheme to define laser fuse in dual damascene CU process
US6750129B2 (en) * 2002-11-12 2004-06-15 Infineon Technologies Ag Process for forming fusible links
TW200531253A (en) * 2003-09-19 2005-09-16 Koninkl Philips Electronics Nv Fuse structure for maintaining passivation integrity
US6876058B1 (en) * 2003-10-14 2005-04-05 International Business Machines Corporation Wiring protection element for laser deleted tungsten fuse
US7397968B2 (en) * 2003-10-29 2008-07-08 Hewlett-Packard Development Company, L.P. System and method for tone composition
US6946718B2 (en) * 2004-01-05 2005-09-20 Hewlett-Packard Development Company, L.P. Integrated fuse for multilayered structure
US7300825B2 (en) * 2004-04-30 2007-11-27 International Business Machines Corporation Customizing back end of the line interconnects
US20050250256A1 (en) * 2004-05-04 2005-11-10 Bing-Chang Wu Semiconductor device and fabricating method thereof
JP4401874B2 (ja) * 2004-06-21 2010-01-20 株式会社ルネサステクノロジ 半導体装置
US7087538B2 (en) * 2004-08-16 2006-08-08 Intel Corporation Method to fill the gap between coupled wafers
CN100390952C (zh) * 2005-05-27 2008-05-28 联华电子股份有限公司 切断熔丝结构的方法
JP4610008B2 (ja) * 2005-09-26 2011-01-12 ルネサスエレクトロニクス株式会社 半導体装置
US8836146B2 (en) * 2006-03-02 2014-09-16 Qualcomm Incorporated Chip package and method for fabricating the same
US20070238304A1 (en) * 2006-04-11 2007-10-11 Jui-Hung Wu Method of etching passivation layer
US20070241411A1 (en) * 2006-04-12 2007-10-18 International Business Machines Corporation Structures and methods for forming sram cells with self-aligned contacts
KR100969946B1 (ko) * 2007-07-24 2010-07-14 주식회사 이오테크닉스 레이저 빔 분할을 이용한 레이저 가공 장치 및 방법
US8310056B2 (en) * 2009-05-29 2012-11-13 Renesas Electronics Corporation Semiconductor device
EP2492675B1 (fr) * 2011-02-28 2019-01-30 Nxp B.V. Puce de biocapteur et procédé de fabrication associé
CN102386129A (zh) * 2011-08-15 2012-03-21 中国科学院微电子研究所 同时制备垂直导通孔和第一层再布线层的方法
US8946000B2 (en) 2013-02-22 2015-02-03 Freescale Semiconductor, Inc. Method for forming an integrated circuit having a programmable fuse
US9070687B2 (en) 2013-06-28 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with self-protecting fuse
US20160260794A1 (en) * 2015-03-02 2016-09-08 Globalfoundries Inc. Coil inductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077202A (ja) * 1999-07-06 2001-03-23 Matsushita Electronics Industry Corp 半導体集積回路装置及びその製造方法
US6562674B1 (en) * 1999-07-06 2003-05-13 Matsushita Electronics Corporation Semiconductor integrated circuit device and method of producing the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6044829B2 (ja) * 1982-03-18 1985-10-05 富士通株式会社 半導体装置の製造方法
JPH05235170A (ja) * 1992-02-24 1993-09-10 Nec Corp 半導体装置
EP0762498A3 (fr) * 1995-08-28 1998-06-24 International Business Machines Corporation Fenêtre pour fusible avec une épaisseur contrÔlée d'oxyde d'un fusible
US5760674A (en) 1995-11-28 1998-06-02 International Business Machines Corporation Fusible links with improved interconnect structure
KR100241061B1 (ko) * 1997-07-26 2000-02-01 윤종용 반도체장치의퓨즈제조방법및퓨즈를가진반도체장치
JPH1187646A (ja) * 1997-09-02 1999-03-30 Mitsubishi Electric Corp 半導体集積回路およびその製造方法
US6033939A (en) 1998-04-21 2000-03-07 International Business Machines Corporation Method for providing electrically fusible links in copper interconnection
US6160302A (en) 1998-08-31 2000-12-12 International Business Machines Corporation Laser fusible link
US6277737B1 (en) * 1998-09-02 2001-08-21 Micron Technology, Inc. Semiconductor processing methods and integrated circuitry
US6162686A (en) * 1998-09-18 2000-12-19 Taiwan Semiconductor Manufacturing Company Method for forming a fuse in integrated circuit application
US6375159B2 (en) * 1999-04-30 2002-04-23 International Business Machines Corporation High laser absorption copper fuse and method for making the same
JP4037561B2 (ja) * 1999-06-28 2008-01-23 株式会社東芝 半導体装置の製造方法
US6180503B1 (en) 1999-07-29 2001-01-30 Vanguard International Semiconductor Corporation Passivation layer etching process for memory arrays with fusible links
US6451681B1 (en) * 1999-10-04 2002-09-17 Motorola, Inc. Method of forming copper interconnection utilizing aluminum capping film
US6753563B2 (en) * 2000-12-05 2004-06-22 Texas Instruments Incorporated Integrated circuit having a doped porous dielectric and method of manufacturing the same
US6348398B1 (en) * 2001-05-04 2002-02-19 United Microelectronics Corp. Method of forming pad openings and fuse openings

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077202A (ja) * 1999-07-06 2001-03-23 Matsushita Electronics Industry Corp 半導体集積回路装置及びその製造方法
US6562674B1 (en) * 1999-07-06 2003-05-13 Matsushita Electronics Corporation Semiconductor integrated circuit device and method of producing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO03003443A1 *

Also Published As

Publication number Publication date
DE10226571A1 (de) 2003-01-16
EP1399958A1 (fr) 2004-03-24
WO2003003443A1 (fr) 2003-01-09
TW583750B (en) 2004-04-11
US20030003703A1 (en) 2003-01-02
JP2005529477A (ja) 2005-09-29
CN1628378A (zh) 2005-06-15
CN1315166C (zh) 2007-05-09
US6559042B2 (en) 2003-05-06

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Legal Events

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Effective date: 20110307