Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
  • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
  • B81B3/0062—Devices moving in two or more dimensions, i.e. having special features which allow movement in more than one dimension
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
  • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
  • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
  • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
  • G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
  • B81B2201/00—Specific applications of microelectromechanical systems
  • B81B2201/04—Optical MEMS
  • B81B2201/045—Optical switches
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
  • B81B2203/00—Basic microelectromechanical structures
  • B81B2203/01—Suspended structures, i.e. structures allowing a movement
  • B81B2203/0181—See-saws
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
  • B81B2203/00—Basic microelectromechanical structures
  • B81B2203/05—Type of movement
  • B81B2203/058—Rotation out of a plane parallel to the substrate

Definitions

• the invention relates to a method of manufacturing an optical micro-mirror as well as an optical micro-mirror or an array of micro-mirrors obtained by the method of the invention. These micro-mirrors are suitable for being controlled electrically.
• Micro-mirrors are generally used in systems involving deflections of light beams and in particular in optical routing systems or in image projection systems.
• micro-mirrors most often using electrostatic, electro-magnetic, piezoelectric or thermoelastic forces
• They generally use hinge configurations allowing, depending on the complexity of the technological steps involved, to oscillate around an axis (single hinge) or two axes of rotation (double hinge) most often oriented orthogonally.
• Figure la shows a view of such a micro-mirror with electrostatic controls allowing rotation along 2 perpendicular axes, used in optical routing systems.
• On the support 1 are made the fixed frame 2 of the micro-mirror and the mobile parts 3 and 4 articulated respectively around the hinges 5 and 6 which allow the desired rotations around the 2 orthogonal axes.
• Each axis of rotation passes through a separate hinge.
• the mobile part 4 is covered with a layer of high reflectivity.
• Figure 1b gives a very schematic sectional view of the various elements forming this type of micro-mirror (section along the axis of the hinge 5). This figure also shows the different control electrodes 7, 8, 9 and 10 of the micro-mirror.
• the opposite electrodes 7 and 8 make it possible to rotate the mobile part 3 around the hinge 5, while the opposite electrodes 9 and 10 make it possible to rotate the mobile part around the hinge 6.
• the manufacturing steps consist, from a mechanical support, of a series of deposits and engravings of suitable materials allowing - the production of the various elements of the micromirror (control electrodes, moving parts, hinges ...) and involve the use of one or more sacrificial layers, the removal of which makes it possible to free the movable part or parts.
• the materials used to make the moving part or parts of the micro-mirrors are in most cases amorphous or poly-crystalline materials (poly-crystalline silicon, aluminum, various metals, etc.) deposited by very conventional techniques (evaporation under vacuum, sputtering, CVD vapor deposition, etc.).
• the materials used to make the sacrificial layer (s) can be of different types (silica, various organic materials, etc.) but are always obtained by deposition techniques (CVD, spinner deposition, sputtering, etc.) which generally do not lead to very precise control of the thicknesses involved (typically a few tens of nanometers for thicknesses of the order of a micron) but which have the advantage of being very flexible to use.
• CVD chemical vapor deposition
• spinner deposition spinner deposition
• sputtering etc.
• the subject of the present invention is a method for producing an optical micro-mirror as well as an optical micro-mirror or an array of micro-mirrors obtained according to the method of the invention. not having the drawbacks of the prior art.
• the micro-mirror obtained according to the method of the invention exhibits excellent precision of angular excursion, while exhibiting good angular excursion.
• the mobile part of the micro-mirror obtained according to the method of the invention has mechanical qualities which lead to obtaining excellent flatnesses.
• the micro-mirror of the invention can be both of the hinged micro-mirror type (single or double) and of the pivot micro-mirror type; this latter type of micro-mirror is original and can precisely be obtained using the process of the invention.
• the invention relates to a method of manufacturing an optical micro-mirror comprising a fixed part, a mobile part connected to the fixed part by articulation means, the mobile part further comprising means reflection.
• This process comprises the following stages: a) production of a stack formed of a mechanical support, of a sacrificial layer of determined thickness of thermal oxidation material called, first layer and of an assembly intended to form the part mobile and comprising at least one layer of material called the second layer b) production of the articulation means, c) production of the mobile part by etching at least the second layer of material, so as to obtain at least one pattern, d ) elimination at least in part of the sacrificial layer so as to release said movable part which is then connected to the rest of the micro-mirror corresponding to the fixed part, by the articulation means.
• the steps of the method of the invention can be carried out in the previous order or in a different order, moreover in certain embodiments some of the steps can be inserted in other steps.
• the support or the layers do not are not necessarily formed of a single material, thus, the support can comprise several layers and the layers can comprise several sublayers.
• the use of a layer of thermal oxidation material makes it possible to have a layer of extremely well controlled thickness which plays the role of sacrificial layers.
• the value of the angular excursion of the movable part can therefore be very precise and reproducible, it can also be of significant value.
• the sacrificial layer of thermal oxidation material has a thickness greater than or equal to 1 micron.
• the method of the invention makes it possible to obtain layers of thermal silica with precisions of the order of a few nanometers over total thicknesses of a few microns or a few tens of microns, approximately 10 times better than those obtained in the prior art on the thickness values of the sacrificial layers; the resulting gain in angular precision will also be of the order of a factor of 10.
• the thermal oxidation layer can be partially removed; it must be engraved at least to allow the release of the movable part.
• the reflecting means are produced on the second layer by mono or multilayer deposition of reflecting materials such as metals, for example gold, silver, aluminum or dielectrics, for example Si0 2 ⁇ Ti0 2 or Si0 2 ⁇ HF0 2 ; these materials are deposited for example by sputtering or vacuum evaporation on the second layer generally after step b).
• reflecting materials such as metals, for example gold, silver, aluminum or dielectrics, for example Si0 2 ⁇ Ti0 2 or Si0 2 ⁇ HF0 2 ; these materials are deposited for example by sputtering or vacuum evaporation on the second layer generally after step b).
• the reflecting means are then produced by the second layer itself.
• the method further comprises a step of epitaxy of the second layer, the reflecting means then being produced on the second layer after epitaxy.
• the epitaxy of the second layer allows an increase in the thickness of this layer with the best possible mechanical continuity and the obtaining of a slightly deformable layer of high mechanical quality (in particular mechanical resistance) which will retain excellent flatness even after step d) of release.
• the second layer is a layer of monocrystalline material.
• the use for the mobile part of monocrystalline materials makes it possible to obtain a great flatness of the surface on which the layer of reflectivity is deposited.
• step a) comprises the production of the thermal oxidation layer on the support, then the deposition of the second layer on the thermal oxidation layer.
• deposition is meant according to the invention any type of deposition including the transfer of a layer.
• step a it is therefore possible either to carry out successively the various steps, or to take directly a semiconductor wafer on insulator such as SOI called "Silicon On Insolator" in English terminology, commercially available.
• SOI substrates using a layer of thermal silica for example the wafers sold under the name "Unibond” by the company SOITEC will be favorably used.
• step a) comprises a transfer onto the mechanical support, of the second layer, the support and ⁇ or the second layer comprising on their faces to transfer a thermal oxidation layer which will form after transfer the first layer.
• the transfer comprises a sealing step (of the support or of the oxide layer on the one hand and of the second layer or of the oxide layer on the other hand) by molecular adhesion.
• a sealing step of the support or of the oxide layer on the one hand and of the second layer or of the oxide layer on the other hand.
• the second layer can be associated with an intermediate support by a connecting zone capable of allowing the withdrawal of the intermediate support after postponement or in certain specific cases before postponement.
• this bonding zone is a weakening zone obtained by ion implantation (see in particular US Pat. No. 5,374,564 - US 6,020,252) and ⁇ or by creation of porosity in the second layer, the withdrawal of intermediate support is produced according to this embrittlement zone by an appropriate treatment such as the application of mechanical forces, and ⁇ or the use of a heat treatment.
• this bonding zone is a sacrificial layer which is attacked chemically to allow the withdrawal of the intermediate support.
• the transfer technique used in this second mode allows the implementation of at least two plates assembled favorably by molecular adhesion techniques and also makes it possible to overcome the limitations of angular excursion without losing precision in the thickness of the or sacrificial layers (which largely determines the precision on the angular excursion).
• the thermal oxide layer is preferably produced by high temperature oxidation under a dry atmosphere (between 800 ° C and 1100 ° C under oxygen) or under a humid atmosphere (between 800 ° C and 1100 ° C under water vapor) and at atmospheric or high pressure.
• a localized etching of the layer or layers placed above the support is carried out before step d), so as to form at at least one via and epitaxy is carried out through each via, the epitaxy material in each via forming all or part of an articulation element of the articulation means.
• the articulation elements can be produced respectively in several parts, in particular in the case of the second embodiment using the transfer of the second layer.
• the articulation means of the invention are produced by: - localized etchings before transfer, so as to form at least one first via in the layer or layers placed above the support, and so as to form at minus a second via in the layer or layers placed on the second layer, facing the support,
• a single articulation element is produced and disposed under the mobile part so as to form a pivot for said part, this pivot connecting the mobile part to the fixed part.
• the pivot can be centered or not under the mobile part according to the applications.
• two articulation elements are produced and arranged on the side and other of the movable part so as to form a hinge connecting it to the fixed part.
• the articulation means are produced by etching the second layer, this etching being able to be carried out at the same time as that allowing the mobile part to be produced.
• hinge-type articulation means can also be produced as described above by epitaxy through vias.
• the support is silicon
• the first layer is a thermal silicon oxide
• the second layer is monocrystalline silicon
• the articulation means are made of monocrystalline silicon.
• the method of the invention involves a thinning: of the second layer to reduce the inertia of the mobile part and allow the operation of the micro-mirror at high frequencies.
• This thinning of the second layer can be achieved either by the creation of a weakening zone at a depth in the second layer such that the remaining thickness, after removal of the surplus (the surplus can be an intermediate support), corresponds to the 'desired thickness for the second layer, either by a step of reactive chemical or ionic etching or mechanical-chemical polishing to the desired thickness or by combination of all these techniques. If the thinning step results in excessively small thicknesses of the second layer, this thickness can be increased during an epitaxy step.
• At least one cavity is produced in the mechanical support facing at least one zone of one of the ends of the mobile part, by etching the support in a geometric shape and dimensions which make it possible to separate the parameters of dimension of the micro-mirror and of total angular excursion ⁇ along the different axis or axes of rotation.
• the cavity or cavities of the support are produced by advantageously anisotropic etching, for example by wet etching or by dry method of the ion etching or reactive ion etching type.
• the support comprises in the case of a pivoting micro-mirror a peripheral cavity opposite a peripheral zone of the end of the movable part.
• the method of the invention comprises a step of producing control means by the formation of facing electrodes on the mechanical support and on the mobile part.
• the electrodes are formed by an ion implantation of dopants followed or not by an appropriate thermal diffusion of the dopants.
• connection lines of the electrodes to a control electronics can be made in different ways and in particular also by a ion implantation of dopants whether or not followed by appropriate thermal diffusion of the dopants. These lines are advantageously made on the face of the support opposite the mobile part, the electrodes of the mobile part being advantageously connected to some of these lines by means of articulation means. Contacts can also be provided at the ends of these lines for connection to the control electronics.
• the connection lines of the different electrodes are produced by metallized holes through the support, the electrodes of the movable part being advantageously connected to some of these metallized holes by means of articulation means; contact sockets can also be provided at the ends of these lines for connection to the control electronics.
• the invention can also use electrical control means using other forces than electrostatic forces and for example electromagnetic, or piezoelectric or thermoelastic forces.
• forces for example electromagnetic, or piezoelectric or thermoelastic forces.
• the control of the mobile parts by magnetic forces requires the production of windings and magnets adapted to generate the necessary magnetic fields.
• the movable part comprises at least two parts, a first part comprising the reflection means and at least a second part surrounding the first part, the articulation means connecting said second part to the fixed part and intermediate articulation means connecting the first part of the movable part to the second part.
• the articulation means of a micro-mirror can comprise at least one hinge or a pivot.
• the intermediate articulation means comprise at least one hinge.
• a pivot allows the movable part to move in all directions around an axis of symmetry passing through the pivot and perpendicular to the plane of the support.
• articulation means and the intermediate articulation means are formed by hinges, in general a hinge composed of 2 elements is necessary to articulate each part of the movable part, the elements of the hinge being situated on either side other of this moving part.
• Each hinge allows a movement of the part with which it is associated around an axis passing through the elements of the hinge called the axis of the hinge and which is parallel to the plane of the support.
• each hinge is arranged so that its axis makes in a plane parallel to the support a determined angle generally equal to 90 ° with the axis of the other hinge.
• the method of the invention applies as well to the production of an individual micro-mirror as to a matrix of micro-mirrors; these micro-mirrors being able to be controlled independently of each other.
• the invention also relates to the micro-mirror obtained according to the method described above as well as a matrix of such micro-mirrors.
• the term matrix includes the bar which is a special case of a matrix whose elements are arranged along a single axis.
• FIGS. 2a to 2i schematically represent in section the different stages of a first method of manufacturing a micro-mirror according to the invention
• FIGS. 3a to 3g schematically represent in section the different stages of a second method of manufacturing the fixed part of a micro-mirror according to the invention
• FIGS. 3g and 4g schematically show in section the different steps of a second method of manufacturing the movable part of a micro-mirror according to the invention
• FIGS. 3g and 4g schematically show in section the different steps allowing after postponement structures obtained in FIGS. 3g and 4g to produce a micro-mirror according to this second mode
• FIGS. 6a to 6g schematically represent in section the different stages of a third method of manufacturing the fixed part of a micro-mirror according to the invention
• FIG. 7a to 7c schematically show in section different positions of a movable part connected to the fixed part by a pivot
• FIG. 8a and 8b respectively give a general perspective of an example of pivot micro-mirror of the invention and an example of a simple hinge micro-mirror of the invention
• FIG. 9a to 9c show top views of different micro-mirrors of the invention showing in particular different geometries of electrodes allowing rotations around one (fig.9a), two (fig.9b) or four axes of rotation (fig. 9c).
• the first process is carried out on a plate while the second process is carried out on two separate plates A and B then transferred.
• the first embodiment of the micro-mirror of the invention which is implemented on a wafer is illustrated in the different figures 2.
• an undoped silicon support 21 is used, on which a dielectric layer of thermal silica 22 is grown.
• a layer of monocrystalline silicon with a surface .20 is then deposited by all known techniques of deposition and especially those of the thin layer transfer.
• FIG. 2b shows the construction of the electrodes of the electrical control means par. the formation of different doped zones 24, 24 'and 23 in the upper part of the undoped silicon support 21 and in the surface layer of monocrystalline silicon 20. These zones are obtained by ion implantation of doping atoms (in general Boron or Phosphorus) at different energies depending on the desired location depth, whether or not followed by thermal annealing.
• doping atoms in general Boron or Phosphorus
• the energy of implantation will typically range between 20 and 300 keV and the implanted dose between 10 14 and 10 1 S cm “2 'As an example, in the layer 20, of thickness W typically between 0.1 micron and 0.6 micron, the implantation energies for forming the zones 23 will be low (15 to 100 keV) while in the support 21, the implanted ions having to pass through the layer of silica 22 of thickness W and partly the silicon layer 21, the implantation energies for forming the zones 24 and 24 ′ will be higher (generally greater than 100 keV). For a mobile part with a single pattern, a only doped zone 23 may suffice.
• FIG. 2c shows the formation of the location 25 of the future pivot by local etching of the layers 20 and 22 to form a via, preferably above an implanted area 24 '.
• Figure 2d illustrates an epitaxy step. This step makes it possible both to produce the pivot in doped monocrystalline silicon and to increase the thickness of the surface silicon 20 in order to increase the mechanical rigidity of what will form the mobile part of the micro-mirror.
• the production of the articulation means is advantageously made of monocrystalline silicon to allow the obtaining of mechanically solid articulation means.
• the doping of the epitaxy material can be modified and for example chosen higher at the start of the process (corresponding to the formation of the pivot 27 which is advantageously electrically connected to an implanted area of the support) than at the end process where it is only a question of increasing the thickness of the layer 20 to form the monocrystalline silicon layer 26, the thickness of which may reach several microns according to the desired specifications.
• the depression 28 which may appear in this epitaxial layer results from the presence of local etching 25.
• FIG. 2e shows a section of the device after the epitaxy and thinning step, for example by mechanical-chemical polishing necessary to erase the depression 28 and obtain a layer of monocrystalline silicon 26 of perfect flatness.
• Other thinning techniques can of course be used and in particular those described in US Patent 5,374,564 or US Patent 6,020,252. :
• FIG. 2f shows the production of the reflection means by the formation on the layer 26 of a mirror layer of high reflectivity 29 at the wavelengths of use of the micro-mirror, for example by a metallic deposit or dielectric multilayers.
• Figure 2g illustrates the etching step of the future mobile part of the micro-mirror.
• This engraving involves layers 29 and 26 and possibly the layer of thermal silica 22.
• This etching is carried out for example by all types of etching adapted to the materials used. clearance (ion etching, reactive ion etching and ⁇ or chemical etching)
• this etching is carried out through a mask (not shown) by a first reactive ion attack, for example with chlorinated gases to attack the aluminum, then by a second reactive ion attack using for example an SF S gas to attack the silicon.
• a first reactive ion attack for example with chlorinated gases to attack the aluminum
• a second reactive ion attack using for example an SF S gas to attack the silicon.
• FIG. 2h shows a section of the component after removal of the sacrificial layer of silica 22 at least under the mobile part of the micro-mirror and therefore the release of this mobile part.
• the removal of the layer 22 is carried out for example for a layer of silicon oxide by a chemical attack based on hydrofluoric acid or by a reactive ionic attack based on fluorinated gases.
• This configuration therefore has the drawback, for a given pivot height H, of fully link the total angular excursion ⁇ and the dimension L of the mobile part in the plane of rotation considered.
• FIG. 2i gives a means of circumventing this drawback by producing in the support 21 cavities 19 which may or may not pass through, the inner edges of which are located at a distance L ′ from the axis of the pivot smaller than L / 2 and the outer edges at A distance greater than L / 2.
• the angular excursion ⁇ defined by the tangent relation ⁇ H / L 'does not then depend on L'and no longer on L.
• This cavity can be easily produced by the rear face of the plate, for example by preferential chemical etching as illustrated in FIG.
• FIGS. 3, 4 and 5 The second embodiment of the invention which carries out the steps of the process on two plates A and B then which transfers these plates is shown in FIGS. 3, 4 and 5.
• FIG. 3c illustrates a step of thermal oxidation of the support, intended to form a layer of thermal oxide 32 of perfectly controlled thickness and generally between 1 and 3 microns; during this step, generally carried out at high temperature, there is diffusion of dopants from the implanted zones and increase in the volume occupied by these zones.
• FIG. 3d shows the next step corresponding to the localized etching 34 of the thermal silica layer 32 above the doped zone 33 ′ to form a via.
• FIG. 3e illustrates a step of epitaxy of the support which makes it possible to grow monocrystalline silicon doped in via 34.
• the part of the articulation element 35 thus formed is of thickness generally very slightly greater than the thickness of the silica layer 32, this part of the element will constitute a part of the future pivot.
• Figure 3f illustrates a chemical mechanical polishing step intended to planarize the surface of ..; the plate A and "erasing" the possible excess thickness of the articulation element 35.
• FIG. 3g represents a step of etching cavities 36 which make it possible to separate the dimensions of the mobile part and the maximum angular excursion ⁇ of said part.
• the dimensions (position relative to the axis of the future pivot, width and depth) of the openings 36 are determined from the dimensions of the mobile part and of the excursion angular ⁇ desired according to the different axes of rotation.
• the cavities 36 can have a thickness much less than the thickness of the support 31.
• These cavities can be of any shape.
• FIGS. 4 show the different stages of manufacturing the wafer B.
• a substrate 41 for example made of monocrystalline silicon, in which an electrode 43 is formed, for example by an ion implantation of dopants ( fig.4b) whether or not followed by thermal annealing.
• a thermal oxide layer 42 (fig.4c) is formed in the same way as for layer 32.
• This layer 42 is then etched to form a via 44 (fig.4d) which extends to l 'electrode 43; this opening has dimensions very close to those of the opening 34 (fig.3d); an epitaxy step (fig.4e) from the monocrystalline silicon then makes it possible to form in the opening 44 another part of the articulation element which is made of doped monocrystalline silicon 45.
• a chemical mechanical polishing step (fig.4f) allows if necessary to obtain a perfect planarization of the surface of the wafer B.
• the step illustrated in FIG. 4g consists in creating a connection zone 46 in the wafer 41 such as a weakening zone created for example by implantation of ions.
• This zone delimits in the wafer a layer (previously called second layer) of thickness typically between 0.1 and 2 microns between the silica layer 42, and the rest of the wafer (which may be an intermediate support).
• This weakening zone makes it possible to separate the second layer from the rest of the wafer, either before transfer but more generally after transfer (see in particular US Patents 5,374,564 and US 6,020,252).
• the first step illustrated in FIG. 5a consists in assembling the two plates A e B with the oxidized face against the oxidized face. During this assembly, the positioning of the two plates is carried out so as to align the two articulation elements 35 and 45 and form a single element 47 which will be the future pivot.
• the sealing can favorably be carried out by known techniques of molecular adhesion.
• the upper part of the layer 41 of the wafer B is separated from the assembly A and B at the level of the weakened zone 46.
• This separation can favorably be made from a heat treatment. and ⁇ or mechanical.
• the method may further comprise (see FIG. 5c) an epitaxy step intended to increase the thickness of the monocrystalline film 41 ′ in order to increase the mechanical rigidity of what will form the movable part of the mirrors, this step can be followed by a chemical mechanical polishing step to planarize the surface.
• the final thickness of this layer 41 ′ is for example from 5 to 60 ⁇ m.
• a layer 48 of high reflectivity at the working optical wavelengths, either metallic or dielectric multilayer, is then deposited on the layer 41 '.
• FIG. 5d shows the next step of etching the layers 41 ′ and 48 according to the desired pattern for the mobile part of the future micro-mirror. This engraving is carried out through a mask not shown.
• FIG. 5e illustrates the step of releasing the mobile part around the pivot 47 by removing the sacrificial layers of thermal silica by chemical attack for example as described for FIG. 2h.
• two articulation elements could have been made (respectively in one part or in two parts) in one thermal oxide so as to form a hinge; in this case, the articulation elements are preferably arranged on either side of the movable part and between the latter and the fixed part.
• the preceding figures have not shown the electrode connection lines and the contact points to control electronics.
• connection lines can be produced in different ways and in particular by ion implantation of dopants followed or not by an appropriate thermal diffusion of the dopants. These lines are advantageously made on the front face of the support opposite the mobile part, the electrode or electrodes of the mobile part being advantageously connected to some of these lines by means of articulation elements. These connection lines can also be produced by metallized holes through the support, the electrode or electrodes of the mobile part being connected to some of these metallized holes advantageously by means of the articulation elements.
• FIG. 3g is shown in dotted lines, the embodiment through the support of metallized holes 70 connecting the electrodes 33 and 33 ′ to contact sockets 71.
• the micro-mirror When the micro-mirror must rotate around at least two perpendicular axes of rotation while retaining the advantage of separating the value of the angular excursion ⁇ , from the dimension L of the movable part, it is advantageously carried out in the support, cavities completely surrounding the pivot 47.
• the connection lines are made on the front face of the support, so as not to cut through the cavities, the electrical connection lines (shown by way of example in the figures 9 and designated by 60) supplying the various electrodes, the support is etched to form a peripheral cavity there before forming the doped areas 33, 33 '.
• FIG. 6 illustrate this variant of the process.
• a cavity 36 is formed by etching carried out by different methods such as reactive ion etching (corresponding to the shape of the cavity in FIG. 3g) where the preferred chemical etching (corresponding to the shape of the cavity in Figure 6b).
• the geometry (shapes and dimensions) of the cavity 36 is determined from the shape (which can be circular, square, rectangular, octagonal ...) and dimensions of the moving part of the micro-mirror and the value of the total angular excursion ⁇ desired along the different axes of rotation; the value of the total angular excursion ⁇ can moreover take different values ⁇ x , ⁇ 2 ... along each of the axes of rotation.
• FIG. 6c embdiments of the doped zones
• FIG. 6d production of the thermal oxide
• FIG. 6e production of a via 34 in the oxide layer
• FIG. 6f epitaxy to produce a part of the pivot
• Figure 6g planearization of the structure
• the plate obtained in FIG. 6g is then transferred to the plate obtained in FIG. 4g, for example, and the rest of the steps of the process are carried out as described with reference to FIGS.
• the micro-mirror obtained is shown in Figures 7.
• Figures 7a, 7b and 7c there are respectively shown three examples of positions of the movable part of this pivot micro-mirror.
• FIG. 7a shows the mobile part arranged in a plane parallel to the plane of the support
• FIG. 7b illustrates the mobile part which has pivoted along an axis of rotation perpendicular to that of the pivot and perpendicular to the plane of the figure, one of the ends of the mobile part is located in the cavity 36
• FIG. 7c illustrates the mobile part which has pivoted around the same axis of rotation but at 180 °, the opposite end of the movable part is in turn in the cavity 36.
• FIG. 8a gives a schematic perspective view of a pivot micro-mirror 47 and FIG. 8b schematically illustrates in perspective a micromirror with a simple hinge 57, said hinge being in this example produced by etching the second layer.
• the advantage of pivoting micro-mirrors for certain applications is that, thanks to a suitable electrode configuration but without modification of the main manufacturing steps, oscillate along several axes of rotation and in particular according to two perpendicular axes.
• Figure 9a shows a top view of an electrode geometry in the fixed part.
• the electrodes 33 allowing the mobile part to oscillate in 2 positions around a single axis of rotation RI are 2 in number and are arranged symmetrically with respect to the axis of rotation RI which passes through the pivot 47, the electrode 33 'central allows with the pivot, the electrical connection of the electrode of the movable part.
• Figure 9b shows a geometry of electrodes
• FIG. 9c gives an example with 4 axes of rotation (RI, R2, R3, R4) at 45 ° from each other and 4 pairs of electrodes 33 arranged in sectors around the axis of the pivot.
• FIGS. 9a, 9b and 9c the various key elements of the micro-mir ⁇ irs are shown in transparency.
• the sets of lower electrodes 33 (electrodes of the fixed part) and the upper electrode 43 (electrode of the mobile part) are shown; the lower electrode 33 ′ which is electrically connected to the upper electrode by the pivot 47 is drawn in dark gray while in FIG. 9b the two sets of electrodes allowing the rotation control of the micro-mirror along each of the axes of perpendicular rotation are drawn with two lighter but different shades of gray.
• the reflecting surface 48 of the movable part and the traces 50 and 51 of the engraved zones 36 allowing the separation of the variables dimension of the micro-mirror and total angular excursion ⁇ are also shown.
• connection lines 62 from the electrodes to the contact sockets 60 are also shown very schematically, these contact sockets being able to be connected to a control electronics (not shown).
• the various preceding functionalities are of course achievable both in the case of the use of a single plate and of several plates.
• the method using at least two wafers allows more possibilities.
• the use of more than two plates can allow in particular the production of more complex structures and in particular the production of several mobile parts superimposed one above the other by means of articulation means; at least, the last movable part comprising reflecting means.
• the superposition of these moving parts in planes parallel to the support makes it possible to have a micro-mirror with even more degrees of freedom.
• the method of the invention applies completely to this type of structure, considering that each movable part is produced successively above a support which can then be either a mobile part produced before, or the first corresponding support to the fixed part.

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• General Physics & Mathematics (AREA)
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• 2001
  • 2001-02-15 FR FR0102067A patent/FR2820834B1/fr not_active Expired - Fee Related
• 2002
  • 2002-02-13 EP EP02704816A patent/EP1390794A2/de not_active Withdrawn
  • 2002-02-13 US US10/467,174 patent/US7022249B2/en not_active Expired - Fee Related
  • 2002-02-13 JP JP2002564646A patent/JP2004522997A/ja active Pending
  • 2002-02-13 CA CA002437817A patent/CA2437817A1/fr not_active Abandoned
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