EP1360880A1 - Installation au plasma et procede de generation d'un revetement fonctionnel - Google Patents

Installation au plasma et procede de generation d'un revetement fonctionnel

Info

Publication number
EP1360880A1
EP1360880A1 EP01989367A EP01989367A EP1360880A1 EP 1360880 A1 EP1360880 A1 EP 1360880A1 EP 01989367 A EP01989367 A EP 01989367A EP 01989367 A EP01989367 A EP 01989367A EP 1360880 A1 EP1360880 A1 EP 1360880A1
Authority
EP
European Patent Office
Prior art keywords
plasma
substrate
gas
plasma beam
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01989367A
Other languages
German (de)
English (en)
Inventor
Stefan Grosse
Sascha Henke
Susanne Spindler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1360880A1 publication Critical patent/EP1360880A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the invention relates to a plasma system with an inductively coupled high-frequency plasma beam source and a method for producing a functional coating on a substrate.
  • Thermal plasmas with which high coating rates in the range of mm / h can be achieved, are particularly suitable for coating substrates in the subatmospheric and atmospheric pressure range. Particularly promising among thermal plasma sources is the inductively coupled one
  • High-frequency plasma radiation source HF-ICP radiation source
  • E. Pfender and CH Chang “Plasma Spray Jets and Plasma Particulate Interaction: Modeling and Experiments", conference proceedings of the 6th workshop on plasma technology, TU Ill enau, 1998.
  • application DE 199 58 474.5 a method for producing functional layers with such a plasma beam source has already been proposed.
  • the advantages of the HF-ICP beam source lie on the one hand in the area of the working pressures in the source, which usually range from 50 bar to 1 bar and more, and on the other hand in the great variety of materials that can be used and deposited with such a plasma beam source.
  • the starting materials are introduced axially into the very hot plasma jet, hard materials with very high melting temperatures can also be used.
  • Another advantage of the RF-ICP beam source is that it works without electrodes, i.e. Contamination of the layers to be produced by the electrode material from the radiation source is excluded.
  • a disadvantage of known HF-ICP beam sources and plasma systems with such plasma beam sources are the high temperatures in the plasma beam of some 1000 ° C., to which the substrate to be coated is largely exposed. In this respect, the selection of substrates that can be used is clearly limited.
  • the object of the present invention was to provide a plasma system with an inductively coupled high-frequency plasma beam source and a method which can be carried out therewith for producing a functional coating on a substrate, the temperature load on the substrate during the production of the functional coating being significantly reduced compared to the prior art.
  • the plasma system according to the invention and the method according to the invention for producing a functional coating on a substrate by means of plasma intensity changed over time has the advantage over the prior art that the temperature to which the substrate is exposed can be reduced to less than half compared to the prior art ,
  • the plasma system according to the invention combines the advantages of a high-rate deposition process taking place in the atmospheric or near-atmospheric pressure range with a lowering of the substrate temperature and a change in the chemical processes in the plasma generated.
  • the method according to the invention is not a high vacuum method, which makes complex devices for ensuring this high vacuum unnecessary.
  • the method according to the invention can be used on almost all technically relevant substrate materials, such as steel and possibly also polymers, and that at the same time a large selection of materials or compositions of the coating to be produced, for example also insulating materials such as ceramics or sintered metals, be available.
  • the above-mentioned imbalance states which are present above all when the plasma is ignited and extinguished, form a substantial part of the total time when the plasma jet is pulsed appropriately, during which the plasma jet acts on the substrate, so that the chemical processes taking place in these imbalance states become a dominant factor for the entire deposition of functional coatings with such a plasma system or such a plasma beam source.
  • the processed substrate is arranged on a substrate electrode which is subjected to a voltage which is changed, preferably pulsed, in phase or phase correlation with the change in the intensity of the plasma beam ,
  • a further advantageous embodiment of the invention provides for the supply of the gas or precursor material to the plasma or the plasma beam to be correlated, in particular synchronized, with the fluctuating intensity of the plasma beam.
  • FIG. 1 shows a first exemplary embodiment of a plasma beam source in section
  • FIG. 2 shows the time-periodic course of the voltage at the plasma beam source
  • FIGS. 3a to 3h the plasma beam varying in intensity as a function of time
  • FIG. 4 shows an exemplary embodiment of a plasma system with a plasma beam source
  • FIG. 5 shows a second exemplary embodiment for a plasma system with a
  • FIG. 6 shows a plasma jet emerging from the plasma jet source according to FIG. 4.
  • the invention is based initially on a plasma jet source 5 known in principle from E. Pfender and C. H. Chang “Plasma Spray Jets and Plasma Particulate Interaction: Modeling and Experiments”, conference proceedings of the 6th workshop on plasma technology, TU Illmenau, 1998, or DE 199 58 474.5.
  • This plasma beam source 5 has a cup-shaped burner body 25 with a rear injector as a feed 10 for supplying an injector gas 11. Furthermore, a first cylindrical sleeve 14 and a second cylindrical sleeve 15 are provided, a central gas 12 being introduced into the interior of the first sleeve 14 via a suitable first feed, not shown, and into the interior of the second sleeve 15 via a suitable second feed, not shown an envelope gas 13 is supplied.
  • the burner body 25 also has, on its side facing away from the feed 10, an, for example, circular outlet opening 26 with a diameter of, for example, 1 cm to 10 cm, in particular 3 cm, which is provided with an opening aperture 22 shaped in accordance with the shape of the plasma jet 21 to be generated. Furthermore, a water-cooled copper coil 17, which is electrically connected to a high-frequency generator 16, is integrated into the burner body 25 in a vicinity of the outlet opening 26.
  • an electrical line of 500 W to 50 kW, in particular 1 kW to 10 kW, at a high frequency of 0.5 MHz to is supplied via the coil 17 and the high-frequency generator 16 20 MHz, in particular 0.5 to 4 MHz, is coupled into the interior of the burner body 25, so that a plasma 21 made of reactive particles can be ignited and maintained in a plasma generation space 27, which plasma plasma 20 emerges from the outlet opening 26 of the burner body 25 exits.
  • This plasma beam 20 acts then on a opposite the outlet opening 26, for example at a distance of '5 example, a piece of steel cm to 50 cm is arranged substrate 19 a which is located on a substrate support or a substrate electrode 18th
  • FIG. 1 additionally provides that an electrical component 28 is integrated in the high-frequency generator 16, with which the electrical power delivered by the high-frequency generator 16 to the coil 17 can be periodically changed over time, so that the intensity of the plasma beam generated also changes periodically over time.
  • the injector gas 11 introduced into the burner body 25 via the feed 10 or injector is, for example, a Precursor material for producing a functional coating on the substrate 19.
  • a gas which reacts with the injector gas 11 is suitable as the central gas 12 which is optionally added.
  • the lower limit is preferably set to zero, so that the plasma beam 20 periodically extinguishes over a predefinable time period.
  • the intensity of the plasma beam 20 may also be provided to vary between these two limits in almost every 'desired shape, such as without the plasma 21 temporarily turns off.
  • the intensity of the plasma beam 20 can vary with respect to the resulting envelopes in a rectangular, sinusoidal, sawtooth, rectangular or triangular shape, optionally with a suitable offset.
  • FIG. 2 explains how the intensity of the plasma beam 20 changes as a function of time when the electrical component 28 controls the high-frequency generator accordingly or the supply of electrical power to the coil
  • the ordinate in FIG. 2 shows the high-frequency voltage U applied to the coil 17, the magnitude or shape of which is approximately proportional to the intensity of the plasma beam 20 to the envelope.
  • the plasma beam 20 is then re-ignited in accordance with FIGS. 3c to 3e, which swings back briefly before it then expands continuously in accordance with FIGS. 3f to 3h, so that after approximately 13.3 ms the initial state in FIG.
  • FIGS. 3a to 3h show in particular that the plasma beam 20 emerges from the plasma beam source 5 as a free and largely bundled plasma beam 20 with little divergence.
  • FIG. 4 explains a plasma system with a conventional chamber 40, in which the substrate 19 is on a substrate carrier
  • FIG. 4 provides that the substrate carrier 18 is held in the chamber 40 with the aid of a holder 32 and can be cooled with cooling water 39 via a cooling water supply 31.
  • a first pressure pn between 10 mbar and 2 bar, in particular between 50 mbar and 1 bar, inside the plasma beam source 5, ie in a first pressure range 30, and inside the chamber 40, ie in a second pressure range 33.
  • a second pressure p 2 which is dependent on the size of the outlet opening 26 and the amount of the enveloping gas 13 or injector gas t - ′ as well as the performance of the pumps connected to the chamber 40. Due to a correspondingly high pumping power, this pressure p 2 is preferably significantly lower than the pressure pi, that is to say for example below 100 mbar, in particular below 10 mbar.
  • Argon which is introduced into the plasma beam source 5 with a gas flow of 40,000 sccm to 60,000 sccm, also serves as the envelope gas 13 in FIG.
  • the plasma beam source 5 or the generation of the plasma 21 is spatially separated from the production of the functional coating on the substrate 19, there is the possibility of the plasma beam 20 in the chamber 40, for example at a pressure of 1 mbar to 10 to use mbar, which leads to the plasma jet 20 being strongly accelerated and expanded at the same time as it emerges from the plasma jet source 5, inside which there is a significantly higher pressure of, for example, 500 mbar.
  • the plasma beam 20 widening when it exits the outlet opening 26.
  • the spatial decoupling of the processes in the chamber 40 from the plasma beam source 5 ensures that the plasma beam 20 can also be used in the chamber 40 under a fine vacuum of 1 mbar without the plasma mode caused by the plasma beam source 5 is specified, changed.
  • the respective pressures are preferably selected such that the ratio of the pressure in the first pressure region 30 to the pressure in the second pressure region 33 is greater than 1.5, in particular greater than 3. For example, a pressure difference of more than 100 mbar is maintained between the plasma generation chamber 27 in the interior of the plasma beam source 5 and the interior of the chamber 40 via a pump device (not shown) connected to the chamber 40.
  • the acceleration and expansion of the plasma jet 20 according to FIG. 4 has the advantage that even complicated geometries of the substrate 19 can be provided with coatings without any problems, and that the larger cross-sectional area of the plasma jet 20 at the location of the substrate 19 results in a shorter coating time with improved homogeneity at the same time the processing of the substrate 19 leads.
  • the holder 32 according to FIG. 4 also serves to introduce the substrate 19 into the plasma beam 20 so that it flows around it and the surface of the substrate 19 is processed and provided or coated with the desired functional layer.
  • the high speed of the reactive particles in the plasma jet 20 not only deeper cavities in the substrate 19 come into contact with the plasma 21, but also the diffusion boundary layer between the substrate 19 ′ and plasma 21 is reduced, which results in the diffusion of reactive plasma components onto the surface of the substrate 19 and thus shortens the required duration of the treatment of the substrate 19 with the plasma jet 20.
  • FIG. 5 explains a further embodiment of a plasma system with a plasma beam source 5.
  • the substrate 19 is arranged on a substrate electrode 18, which is connected to a substrate generator 37 via a generator feed line 36, so that the substrate is above it 19 can be supplied with an electrical voltage. Due to the electrical power or voltage thus coupled into the substrate electrode 18, ions contained in the plasma 21 or the plasma beam 20 are accelerated towards the substrate 19 and hit there with increased energy. Otherwise, a conventional insulation 34 for the electrical separation of the holder 32 and the cooling water supply 31 from the substrate electrode 18 is provided in FIG. The holder is for the effective movement of the substrate 19 relative to the plasma beam 20, in particular during the generation of the functional layer
  • the 32 of the substrate 19 is further preferably designed to be movable or rotatable in all three spatial directions.
  • the substrate generator 37 acts on the substrate electrode 18 with an electrical voltage of typically 10 V to 5 kV, in particular 50 V to 300 V, at a frequency of 0 Hz to 50 MHz, in particular 1 kHz to 50 kHz.
  • the voltage generated by the substrate generator 37 is corrected in time, in particular in opposite phase, to the change in the intensity of the plasma beam 21 with the plasma beam source 5, preferably pulsed.
  • Variants of the exemplary embodiment according to FIG. 5 provide expedient changes in the shape of the electrical voltage coupled into the substrate electrode 18, adapted to the individual case. For this purpose, their amplitude, frequency and / or slope can be changed, it can be a
  • Offset of a positive or negative DC voltage can be used or the voltage used is pulsed. In addition, it is not mandatory, but only advantageous if the electrical voltage used is changed periodically.
  • a pressure of more than 1 mbar, in particular 50 mbar to 1 bar prevails within the plasma jet source 5, while a significantly lower pressure exists in the chamber 40 of below 50 mbar, in particular 1 mbar to 10 mbar, is maintained.
  • This pressure ensures that there is a sufficient mean free path length of the ions from the plasma 21 in the chamber 40, so that the electrical voltage applied to the substrate electrode 18 still has an appreciable effect, i.e. leads to an acceleration of the ions present in the plasma beam 20 in the direction of the substrate 19.
  • the substrates 19 can be both electrically conductive and electrically insulating.
  • hard carbon layers can be generated in a rough vacuum with the aid of the aforementioned plasma system and the method explained.
  • the plasma system explained can also be used for treating the surface of the substrate 19, for example for carbonizing, nitriding or also for heating.
  • the plasma 21 has at least one gaseous or a microscale or a nanoscale precursor material, a suspension of the plasma 21 via the feed 10 in the plasma jet source 5 and / or the plasma jet 20 via a feed device (not shown) in the chamber 40 such precursor material or a reactive gas is supplied that, in a modified form, in particular after undergoing a chemical reaction or chemical activation, forms or integrates the functional coating on the substrate 19.
  • a carrier gas for the precursor material in particular argon and / or a reactive gas for a chemical reaction with the precursor material, in particular oxygen, nitrogen, Am can be added to the plasma 21 in the plasma jet source 5 or via the feed device also in the chamber 40 - Moniak, a silane, acetylene, methane or hydrogen can be supplied.
  • the precursor material is preferably an organic, an organosilicon or an organometallic compound which gives the plasma 21 and / or the plasma jet 20 in gaseous form.
  • ger or liquid form as microscale or nanoscale powder particles, as a liquid suspension, ' in particular with microscale or nanoscale particles suspended therein, or as a mixture of gaseous or liquid substances with solids.
  • a layer or a sequence of layers can be produced which contain a metal silicide, a metal carbide, a silicon carbide, a metal oxide, a silicon oxide, a metal nitride, Contains silicon nitride, a metal boride, a metal sulfide, amorphous carbon, diamond-like carbon or a mixture of these materials.
  • the high-frequency generator 16 is preferably a tetrode generator, which makes it possible in a particularly simple manner to generate the plasma beam 20 in the manner explained in an intensity-modulated manner, so that the temperature of the substrate 19 in the is essentially given by the average power of the plasma jet 20.
  • the method according to the invention thus also allows very high powers of the plasma beam 20 to be used for a short time without the substrate 19 being thermally overloaded.
  • the regulation of the gases supplied to the plasma beam source 5, for example the central gas 12, the injector gas 11 or the envelope gas 13, with the temporal modulation of the intensity of the plasma beam 20 and / or the temporal change of those at the substrate electrode 18 applied voltage is correlated.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

L'invention concerne une installation au plasma présentant une source de plasma inductif haute fréquence (5) qui comprend un corps (25) de brûleur, définissant une chambre de génération de plasma (27) et présentant une ouverture de sortie (26) pour le jet de plasma (20), une bobine (17) entourant partiellement la chambre de génération de plasma (27), une alimentation (10) pour l'introduction d'un gaz et/ou d'un matériau précurseur dans la chambre de génération de plasma (27) et un générateur haute fréquence (16), en liaison avec la bobine (17), de manière à allumer le plasma (21) et faire entrer une puissance électrique dans ce plasma (21). Cette source de plasma (5) présente en outre un composant électrique, avec lequel l'intensité du jet de plasma (20) peut être modifiée de façon périodique. Cette invention concerne également un procédé de génération du revêtement fonctionnel sur un substrat (19) à l'aide de ladite installation au plasma.
EP01989367A 2001-02-02 2001-12-05 Installation au plasma et procede de generation d'un revetement fonctionnel Withdrawn EP1360880A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10104614A DE10104614A1 (de) 2001-02-02 2001-02-02 Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung
DE10104614 2001-02-02
PCT/DE2001/004564 WO2002062114A1 (fr) 2001-02-02 2001-12-05 Installation au plasma et procede de generation d'un revetement fonctionnel

Publications (1)

Publication Number Publication Date
EP1360880A1 true EP1360880A1 (fr) 2003-11-12

Family

ID=7672551

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01989367A Withdrawn EP1360880A1 (fr) 2001-02-02 2001-12-05 Installation au plasma et procede de generation d'un revetement fonctionnel

Country Status (5)

Country Link
US (1) US20110129617A1 (fr)
EP (1) EP1360880A1 (fr)
JP (1) JP4416402B2 (fr)
DE (1) DE10104614A1 (fr)
WO (1) WO2002062114A1 (fr)

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DE10256257A1 (de) * 2002-12-03 2004-06-24 Robert Bosch Gmbh Vorrichtung und Verfahren zum Beschichten eines Substrates und Beschichtung auf einem Substrat
DE10259174B4 (de) 2002-12-18 2006-10-12 Robert Bosch Gmbh Verwendung eines tribologisch beanspruchten Bauelements
US6969953B2 (en) * 2003-06-30 2005-11-29 General Electric Company System and method for inductive coupling of an expanding thermal plasma
JP4932546B2 (ja) * 2007-03-07 2012-05-16 日本電気株式会社 通信ノード及び該通信ノードを有するネットワーク・システムとデータ伝送方法
CA2658210A1 (fr) * 2008-04-04 2009-10-04 Sulzer Metco Ag Methode et dispositif permettant de revetir et de traiter la surface des substrats au moyen d'un faisceau plasma
DE102009010497A1 (de) * 2008-12-19 2010-08-05 J-Fiber Gmbh Mehrdüsiger rohrförmiger Plasma-Abscheidebrenner zur Herstellung von Vorformen als Halbzeuge für optische Fasern
CA2813159A1 (fr) * 2012-05-24 2013-11-24 Sulzer Metco Ag Procede de modification d'une region frontiere d'un substrat
JP6292769B2 (ja) * 2013-05-30 2018-03-14 小島プレス工業株式会社 プラズマｃｖｄ装置及びプラズマｃｖｄ膜の形成方法
FI129719B (en) * 2019-06-25 2022-07-29 Picosun Oy PLASMA IN SUBSTRATE PROCESSING EQUIPMENT
EP3990678A4 (fr) * 2019-06-25 2023-01-04 Picosun Oy Plasma dans un appareil de traitement de substrat

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KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
JP3631269B2 (ja) * 1993-09-27 2005-03-23 株式会社東芝 励起酸素の供給方法
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Also Published As

Publication number Publication date
US20110129617A1 (en) 2011-06-02
WO2002062114A1 (fr) 2002-08-08
DE10104614A1 (de) 2002-08-22
JP4416402B2 (ja) 2010-02-17
JP2004518028A (ja) 2004-06-17

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