Classifications

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  • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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  • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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  • H01L2224/161—Disposition
  • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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  • H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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  • H01L2924/1904—Component type
  • H01L2924/19041—Component type being a capacitor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
  • H01L2924/1901—Structure
  • H01L2924/1904—Component type
  • H01L2924/19043—Component type being a resistor

Definitions

• the invention relates to the mounting of sensors of physical quantities capable of operating in a harsh environment.
• the assembly consists in transferring a micro-machined sensor to a base provided with electrical connection pins.
• the sensor is produced for example from one or more machined silicon wafers, comprising mechanical elements (membranes, beams, seismic masses, etc.), electronic elements (capacity armatures, or strain gauges in particular), electrical connections, and metal contact pads allowing the electrical connection with the pins of the base when the sensor is fixed on the base.
• the senor is bonded or soldered by its rear face to the base, in a central part of the latter surrounded by the connection pins which pass through the base.
• the connection pads of the sensor, on the front face of the latter, are connected by soldered wires (technique called “ire-bonding") between the connection pads and the tops of the connection pins which protrude from the surface of the base.
• a polymerizable material such as a silicone resin is then deposited on the conductive parts. Parylene can also be deposited.
• a polymerizable material such as a silicone resin
• Parylene can also be deposited.
• this type of coating is not always sufficiently resistant to aggressive media.
• the invention proposes carrying out on the conductive parts an electrolytic deposition of metal, followed by an oxidation or nitriding of this metal, so as to cover with an insulating oxide or nitride layer all the conductive parts capable of being subsequently in contact with an environment which is not perfectly insulating.
• the invention provides a method for producing a physical quantity sensor, consisting in preparing an active part of the sensor and a base, the active part comprising at least one plate provided with conductive connection pads on one face, and the base being provided with conductive pins, electrically connecting the studs and the pins by conductive elements, then immersing the plate and the ends of the pin in an electrolytic bath, performing an electrolytic deposition of at least one conductive metal on the pin ends, the pads, and the conductive elements which connect them, and in carrying out an oxidation or nitriding of this metal to constitute an insulating coating on the connection pads, the ends of connection pins, and the conductive elements which connect them link. Electrolytic deposition only occurs on the conductive parts, but not on the insulating parts.
• electrolytic deposition means a deposition of metal (single metal or alloy or combination of metals deposited simultaneously or successively) on a conductive zone, obtained by migration of metal ions from a liquid solution. Migration can be caused either by the passage of an electric current (conventional electrolytic bath with current supply electrodes), or by chemical reaction (so-called “electroless” deposit).
• This method can be implemented either in the case where wire-bonding wires are welded between the studs and the pin ends or in the case where the pin ends are welded directly each on a respective stud.
• the electrolytic deposit intended to be then oxidized or nitrided can be in particular a tantalum deposit, giving rise to an oxide coating or tantalum nitride, particularly resistant to chemical attack or to temperature and pressure.
• Oxidation will generally be carried out by a step subsequent to the electrolytic metal deposition step, but it is sometimes possible to obtain the metal oxide directly during the electrolysis itself rather than successively depositing metal followed by oxidation.
• FIG. 1 shows a sensor whose active part is connected by wires welded to the pins of the base
• FIG. 2 shows the sensor of Figure 1, after electrolytic deposition of metal on the welded wires and on the connection pads;
• - Figure 3 shows the sensor according to the invention, after surface oxidation of the electrolytic deposit;
• - Figure 4 shows a sensor whose active part is turned upside down and is welded to a base by an electrolytic metal deposition operation;
• - Figure 5 shows the sensor of Figure 4 after electrolytic deposition of a second metal layer and after surface oxidation of this second metal layer.
• the invention will be described in connection with a pressure sensor which must operate in a harsh environment, for example an exhaust gas pressure sensor of an internal combustion engine or a pressure sensor placed inside the cylinder d 'such an engine.
• a harsh environment for example an exhaust gas pressure sensor of an internal combustion engine or a pressure sensor placed inside the cylinder d 'such an engine.
• the environment is harsh due to the very high temperatures (several hundred degrees Celsius) and the harmfulness of the ambient environment (aggressive gases).
• the invention is however applicable to other sensors.
• FIG. 1 shows the sensor in an intermediate manufacturing phase, in which the active part of the sensor has been soldered on a base and connecting wires have been soldered between connection pads of the active part and connection pins mounted on the base.
• the active part of the sensor is constituted in this example from two welded silicon plates 10 and 12, machined so as to delimit a cavity 14 closed by a thin silicon membrane 16.
• the plate 10 could be made of glass.
• On the membrane 16 are formed, by microelectronic manufacturing processes, the electronic elements 18 necessary for the detection of the deformations thereof.
• these elements are strain gauges formed directly in the silicon (by implantation of suitable dopants in the silicon) or formed in a layer of silicon separated from the silicon substrate by an insulating layer (structure silicon on insulator, called "SOI For "silicon on insulator”).
• SOI silicon on insulator
• these gauges can be made on the membrane inside the cavity 14; if the environment is less difficult, they can be formed outside the cavity 14.
• the gauges are sensitive to deformations of the membrane, caused by the pressure variations that one wants to measure.
• connection pads 22 which are conductive metal surfaces serving for the electrical connection with external pins.
• the front face, or main face, of the active part of the sensor is that which faces upwards in FIG. 1.
• the front face is generally protected by a passivation layer 24 (made of silicon oxide or nitride for example) which covers the entire surface except for the connection pads 22 or at least their central part.
• a base 30 is made through which metallic connection pins 32 pass, the number of which is equal to the number of connection pads present on the sensor and necessary for the operation thereof.
• the upper part of the pins opens to the upper surface or above the upper surface of the base.
• the lower part descends below the lower surface of the base and can be plugged, for example, into a female connector or into holes in a printed circuit, or connected by soldering to individual conducting wires, etc.
• the base can be insulating or conductive, but in the latter case it is necessary to provide that an insulator 33 (for example glass in the case of a metal base) fills the passages in which the pins are inserted, in order to electrically isolate the pins from each other.
• the base is made of a metal alloy such as Kovar, with glass bushings. It could be made of insulating ceramic, or even plastic for moderate temperature environments.
• the active part of the sensor is glued or welded by its rear face to the upper surface of the base.
• Conductive connecting wires 40 (for example gold wires) are welded between the connection pads 12 and the tops of the pins 32.
• the method according to the invention then consists in immersing in an electrolytic bath the active part of the sensor as well as the upper part of the pins, so that a conductive metallic deposit is formed, by electrolytic migration, both on the pads 22, on the wires 40, and on the upper part of the pins 32.
• the electrolytic deposit only forms on the conductive parts immersed in the bath; it does not form in particular on the membrane 16 covered with the passivation layer 24, so that the mechanical characteristics of the membrane are not altered by the electrolytic deposition.
• One or more metals can be deposited, in particular an alloy or a simultaneous deposit of several metals.
• FIG. 2 shows the sensor thus covered with an electrolytic deposit 42 on all of its conductive parts above the base: the parts located below the base are not immersed in the bath.
• the metal deposited by electrolysis can in particular be tantalum, but other metals are possible, in particular nickel or tungsten or molybdenum. A combination of metals (alloy or co-deposit) can also be considered.
• the connection pads can be made of gold or other metals or a combination of metals (several metallic layers sometimes overlapped). If the deposit is made by conventional electrolysis with current flow in a solution containing metal ions, we arrange to connect all the pins together during the time of the electrolysis (preferably by the back of the base, c (i.e. by a part which does not immerse in the electrolytic bath). A difference of appropriate electrolysis potential is applied between these pins and another electrode immersed in the bath.
• Electroless deposition is also possible; in this case the electrolysis occurs by simple chemical reaction between the pins or connection pads and the ionic solution of the electrolytic bath, without application of external potential differences.
• the oxidized or nitrided surface layer 44 thus formed (FIG. 3) is insulating and very resistant to attack by the external environment.
• the tantalum oxide which forms in the case where the layer 42 is tantalum, is very resistant, even at high temperature, to the penetration of humidity, to the salinity of the air, to corrosive agents, etc. All the conductive parts situated above the base and which had been covered by the electrolytic deposit 42 are thus covered with the insulating protective layer 44.
• the insulating protective layer 44 has the advantage of avoiding having to protect the sensor by an insulating oil bath and a metal membrane as was the case. sometimes in the prior art for. avoid electrical leakage between pins brought to different potentials.
• This type of assembly was expensive, and the presence of the oil bath modified the specific characteristics of the sensor: for example, in the case of a pressure sensor, the external pressure is transmitted through the oil bath, which causes measurement errors that are difficult to compensate for.
• FIG. 3 represents the sensor provided with the layer 44 on all the conductive parts situated above the base.
• the pin parts protruding from the back of the base are protected during the oxidation or nitriding operation, or they are pickled after this operation.
• the oxidation or nitriding of the deposited electrolytic layer can be done either by annealing in an oxidizing atmosphere or by soaking in an oxidizing chemical or electrolytic bath. Sometimes even it can occur during electroless deposition.
• the invention is also applicable in another configuration, in which the active part of the sensor is turned over with its front face facing down, that is to say facing the base, the active part being directly welded by its conductive pads 22 on the tops of the pins 32.
• FIG. 4 represents an intermediate manufacturing step in which the active part of the sensor has been fixed to its base as follows: each pin apex 32 projects from the upper surface of the base, opposite a respective stud 22 , and it is held against this pad while the whole of the active part of the sensor and the tips of the pads are immersed in an electrolytic bath.
• a metal deposit 34 is formed on both the studs and the ends of the pins. This deposit constitutes an electrolytic weld between the studs and the pins and the electrolysis is continued long enough for the deposited thickness to form a rigid mechanical connection between the studs and the pins.
• the conductive elements which connect the pads 22 to the tops of the pins are in this case constituted by the electrolytic deposit 34 and not by wires as in FIGS. 1 to 3.
• the metal thus deposited electrolytically is easily oxidizable or nitrided, and if the oxide or nitride layer then formed has the desired characteristics of corrosion resistance, its surface oxidation or nitriding can be carried out directly, either by annealing in an atmosphere oxidizing either by soaking in an oxidizing bath to achieve the desired protective layer on the conductive elements.
• the deposited metal is not easy to oxidize or nitride, or if the oxide or nitride formed is not sufficiently resistant in the envisioned environment, a new electrolytic deposition of another metal (tantalum) is carried out in particular), followed by a surface oxidation or nitriding of this metal. This is particularly the case if the first electrolytic deposit, used to solder the studs on the pins, is made of copper.
• FIG. 5 represents a sensor thus covered with the first electrolytically deposited layer 34 (copper for example), then with a second electrolytic layer 35 (preferably tantalum), and finally with the insulating oxidized surface layer 36 (tantalum oxide Ta 2 Bone).
• first electrolytically deposited layer 34 copper for example
• second electrolytic layer 35 preferably tantalum
• insulating oxidized surface layer 36 tantalum oxide Ta 2 Bone
• the invention is particularly applicable to pressure, force, acceleration, temperature, gas detection or liquid sensors, operating in harsh environment.

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• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Pressure Sensors (AREA)
• Measuring Fluid Pressure (AREA)
• Testing Or Measuring Of Semiconductors Or The Like (AREA)
• Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Applications Claiming Priority (3)

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• 2000
  • 2000-08-11 FR FR0010581A patent/FR2812968B1/fr not_active Expired - Fee Related
• 2001
  • 2001-08-07 US US10/089,974 patent/US6825512B2/en not_active Expired - Fee Related
  • 2001-08-07 EP EP01963069A patent/EP1307910A1/de not_active Withdrawn
  • 2001-08-07 WO PCT/FR2001/002567 patent/WO2002015256A1/fr active Application Filing

Non-Patent Citations (1)

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