EP1303869A2 - Ensemble support de substrat chauffe et procede associe - Google Patents

Ensemble support de substrat chauffe et procede associe

Info

Publication number
EP1303869A2
EP1303869A2 EP01959774A EP01959774A EP1303869A2 EP 1303869 A2 EP1303869 A2 EP 1303869A2 EP 01959774 A EP01959774 A EP 01959774A EP 01959774 A EP01959774 A EP 01959774A EP 1303869 A2 EP1303869 A2 EP 1303869A2
Authority
EP
European Patent Office
Prior art keywords
collar
substrate
support
temperature
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01959774A
Other languages
German (de)
English (en)
Inventor
Claes Bjorkman
Kenny Doan
Bryan Pu
Hamid Noorbakhsh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP1303869A2 publication Critical patent/EP1303869A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

L'invention concerne un ensemble support de substrat (30) comprenant un support (38) présentant une surface d'appui (55) de substrat et un collier (130) comportant un connecteur électrique, le collier (130) pouvant être alimenté par une tension par le biais du connecteur électrique. Un courant peut traverser le collier (130) de manière à le chauffer par résistance à une température prédéterminée avant le traitement du substrat. Dans un autre mode de réalisation, la température du collier (130) peut être régulée pendant et/ou avant le traitement du substrat.
EP01959774A 2000-07-25 2001-06-26 Ensemble support de substrat chauffe et procede associe Withdrawn EP1303869A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62513100A 2000-07-25 2000-07-25
US625131 2000-07-25
PCT/US2001/041233 WO2002009162A2 (fr) 2000-07-25 2001-06-26 Ensemble support de substrat chauffe et procede associe

Publications (1)

Publication Number Publication Date
EP1303869A2 true EP1303869A2 (fr) 2003-04-23

Family

ID=24504713

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01959774A Withdrawn EP1303869A2 (fr) 2000-07-25 2001-06-26 Ensemble support de substrat chauffe et procede associe

Country Status (5)

Country Link
EP (1) EP1303869A2 (fr)
JP (1) JP2004505446A (fr)
KR (1) KR20030019607A (fr)
TW (1) TW557532B (fr)
WO (1) WO2002009162A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
JP4799947B2 (ja) * 2005-02-25 2011-10-26 株式会社ダイヘン 高周波電源装置および高周波電源の制御方法
JP5004436B2 (ja) * 2005-05-23 2012-08-22 東京エレクトロン株式会社 静電吸着電極および処理装置
JP4792381B2 (ja) * 2006-12-25 2011-10-12 東京エレクトロン株式会社 基板処理装置、フォーカスリングの加熱方法及び基板処理方法
US20090151870A1 (en) * 2007-12-14 2009-06-18 Tokyo Electron Limited Silicon carbide focus ring for plasma etching system
JP5274918B2 (ja) * 2008-07-07 2013-08-28 東京エレクトロン株式会社 プラズマ処理装置のチャンバー内部材の温度制御方法、チャンバー内部材及び基板載置台、並びにそれを備えたプラズマ処理装置
JP5255936B2 (ja) * 2008-07-18 2013-08-07 東京エレクトロン株式会社 フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
JP6449294B2 (ja) * 2013-12-06 2019-01-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 予熱部材をセルフセンタリングするための装置
WO2015116245A1 (fr) * 2014-01-30 2015-08-06 Applied Materials, Inc. Ensemble de confinement des gaz permettant de supprimer un cadre de masquage
EP3095411B1 (fr) 2015-05-22 2020-03-25 Ivoclar Vivadent AG Adaptateur de support d'ébauche dentaire de fraisage et support de pièce
JP6960390B2 (ja) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 給電構造及びプラズマ処理装置
US20220172925A1 (en) * 2019-03-13 2022-06-02 Lam Research Corporation Electrostatic chuck heater resistance measurement to approximate temperature

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099571A (en) * 1990-09-07 1992-03-31 International Business Machines Corporation Method for fabricating a split-ring electrostatic chuck
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
JPH07278850A (ja) * 1994-04-15 1995-10-24 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
FR2783970B1 (fr) * 1998-09-25 2000-11-03 Commissariat Energie Atomique Dispositif autorisant le traitement d'un substrat dans une machine prevue pour traiter de plus grands substrats et systeme de montage d'un substrat dans ce dispositif

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0209162A2 *

Also Published As

Publication number Publication date
WO2002009162A2 (fr) 2002-01-31
WO2002009162A3 (fr) 2002-06-13
KR20030019607A (ko) 2003-03-06
JP2004505446A (ja) 2004-02-19
TW557532B (en) 2003-10-11

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