JP2004505446A - 基板の支持体アセンブリー及び支持方法 - Google Patents

基板の支持体アセンブリー及び支持方法 Download PDF

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Publication number
JP2004505446A
JP2004505446A JP2002514773A JP2002514773A JP2004505446A JP 2004505446 A JP2004505446 A JP 2004505446A JP 2002514773 A JP2002514773 A JP 2002514773A JP 2002514773 A JP2002514773 A JP 2002514773A JP 2004505446 A JP2004505446 A JP 2004505446A
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JP
Japan
Prior art keywords
collar
substrate
temperature
support
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002514773A
Other languages
English (en)
Japanese (ja)
Inventor
ビョルクマン　クレス
ドアン　ケニー
プ　ブライヤン
ノールバクシュ　ハミド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2004505446A publication Critical patent/JP2004505446A/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Resistance Heating (AREA)
JP2002514773A 2000-07-25 2001-06-26 基板の支持体アセンブリー及び支持方法 Withdrawn JP2004505446A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62513100A 2000-07-25 2000-07-25
PCT/US2001/041233 WO2002009162A2 (fr) 2000-07-25 2001-06-26 Ensemble support de substrat chauffe et procede associe

Publications (1)

Publication Number Publication Date
JP2004505446A true JP2004505446A (ja) 2004-02-19

Family

ID=24504713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002514773A Withdrawn JP2004505446A (ja) 2000-07-25 2001-06-26 基板の支持体アセンブリー及び支持方法

Country Status (5)

Country Link
EP (1) EP1303869A2 (fr)
JP (1) JP2004505446A (fr)
KR (1) KR20030019607A (fr)
TW (1) TW557532B (fr)
WO (1) WO2002009162A2 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310245A (ja) * 2005-02-25 2006-11-09 Daihen Corp 高周波電源装置および高周波電源の制御方法
JP2006332129A (ja) * 2005-05-23 2006-12-07 Tokyo Electron Ltd 静電吸着電極および処理装置
JP2008159931A (ja) * 2006-12-25 2008-07-10 Tokyo Electron Ltd 基板処理装置、フォーカスリングの加熱方法及び基板処理方法
JP2010016319A (ja) * 2008-07-07 2010-01-21 Tokyo Electron Ltd プラズマ処理装置のチャンバー内部材の温度制御方法、チャンバー内部材及び基板載置台、並びにそれを備えたプラズマ処理装置
JP2010027860A (ja) * 2008-07-18 2010-02-04 Tokyo Electron Ltd フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
JP2019208064A (ja) * 2014-01-30 2019-12-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ シャドーフレームを除去するためのガス閉じ込め装置アセンブリ
JP2020096136A (ja) * 2018-12-14 2020-06-18 東京エレクトロン株式会社 給電構造及びプラズマ処理装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US20090151870A1 (en) * 2007-12-14 2009-06-18 Tokyo Electron Limited Silicon carbide focus ring for plasma etching system
CN105981142B (zh) * 2013-12-06 2019-11-01 应用材料公司 用于使预热构件自定中心的装置
EP3095411B1 (fr) 2015-05-22 2020-03-25 Ivoclar Vivadent AG Adaptateur de support d'ébauche dentaire de fraisage et support de pièce
WO2020185744A1 (fr) * 2019-03-13 2020-09-17 Lam Research Corporation Mesure de résistance d'élément chauffant à mandrin électrostatique pour approcher une température

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099571A (en) * 1990-09-07 1992-03-31 International Business Machines Corporation Method for fabricating a split-ring electrostatic chuck
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
JPH07278850A (ja) * 1994-04-15 1995-10-24 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
FR2783970B1 (fr) * 1998-09-25 2000-11-03 Commissariat Energie Atomique Dispositif autorisant le traitement d'un substrat dans une machine prevue pour traiter de plus grands substrats et systeme de montage d'un substrat dans ce dispositif

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310245A (ja) * 2005-02-25 2006-11-09 Daihen Corp 高周波電源装置および高周波電源の制御方法
JP2006332129A (ja) * 2005-05-23 2006-12-07 Tokyo Electron Ltd 静電吸着電極および処理装置
JP2008159931A (ja) * 2006-12-25 2008-07-10 Tokyo Electron Ltd 基板処理装置、フォーカスリングの加熱方法及び基板処理方法
JP2010016319A (ja) * 2008-07-07 2010-01-21 Tokyo Electron Ltd プラズマ処理装置のチャンバー内部材の温度制御方法、チャンバー内部材及び基板載置台、並びにそれを備えたプラズマ処理装置
US8425791B2 (en) 2008-07-07 2013-04-23 Tokyo Electron Limited In-chamber member temperature control method, in-chamber member, substrate mounting table and plasma processing apparatus including same
KR101560003B1 (ko) * 2008-07-07 2015-10-13 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치의 챔버내 부재의 온도 제어 방법, 챔버내 부재 및 기판 탑재대와 그것을 구비한 플라즈마 처리 장치
JP2010027860A (ja) * 2008-07-18 2010-02-04 Tokyo Electron Ltd フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
JP2019208064A (ja) * 2014-01-30 2019-12-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ シャドーフレームを除去するためのガス閉じ込め装置アセンブリ
JP2020096136A (ja) * 2018-12-14 2020-06-18 東京エレクトロン株式会社 給電構造及びプラズマ処理装置

Also Published As

Publication number Publication date
EP1303869A2 (fr) 2003-04-23
TW557532B (en) 2003-10-11
WO2002009162A2 (fr) 2002-01-31
WO2002009162A3 (fr) 2002-06-13
KR20030019607A (ko) 2003-03-06

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Effective date: 20080902