EP1292529A1 - Transistor vertical a grille mobile et son procede de production - Google Patents

Transistor vertical a grille mobile et son procede de production

Info

Publication number
EP1292529A1
EP1292529A1 EP01936280A EP01936280A EP1292529A1 EP 1292529 A1 EP1292529 A1 EP 1292529A1 EP 01936280 A EP01936280 A EP 01936280A EP 01936280 A EP01936280 A EP 01936280A EP 1292529 A1 EP1292529 A1 EP 1292529A1
Authority
EP
European Patent Office
Prior art keywords
field effect
wafer
effect transistor
gate structure
vertical field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01936280A
Other languages
German (de)
English (en)
Inventor
Thomas Gessner
Andreas Bertz
Steffen Heinz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of EP1292529A1 publication Critical patent/EP1292529A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un transistor à effet de champ vertical réalisé à partir d'une plaquette de semiconducteur (1), présentant un transistor résiduel qui comprend une source (42), un canal (3) et un drain (1) ainsi qu'une structure de grille (8) mobile, placée avant le canal (3), à distance de ce dernier, au moyen d'au moins une suspension flexible (7). L'invention est caractérisée en ce que la structure de grille mobile (8) est constituée du même matériau que la tranche de semiconducteur (1). Les suspensions (7) de la structure mobile (8) présentent de préférence un grand rapport hauteur/largeur, ce qui permet à la grille mobile (8) de se déplacer de préférence dans le plan de la tranche.
EP01936280A 2000-06-21 2001-04-26 Transistor vertical a grille mobile et son procede de production Withdrawn EP1292529A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10029501 2000-06-21
DE10029501A DE10029501C1 (de) 2000-06-21 2000-06-21 Vertikal-Transistor mit beweglichen Gate und Verfahren zu dessen Herstelllung
PCT/EP2001/004702 WO2001098200A1 (fr) 2000-06-21 2001-04-26 Transistor vertical a grille mobile et son procede de production

Publications (1)

Publication Number Publication Date
EP1292529A1 true EP1292529A1 (fr) 2003-03-19

Family

ID=7645829

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01936280A Withdrawn EP1292529A1 (fr) 2000-06-21 2001-04-26 Transistor vertical a grille mobile et son procede de production

Country Status (5)

Country Link
US (1) US6849912B2 (fr)
EP (1) EP1292529A1 (fr)
JP (1) JP2004513506A (fr)
DE (1) DE10029501C1 (fr)
WO (1) WO2001098200A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10243511A1 (de) * 2002-09-19 2004-04-01 Robert Bosch Gmbh Verfahren und mikromechanische Vorrichtung
KR100574465B1 (ko) * 2004-05-21 2006-04-27 삼성전자주식회사 수직 단차 구조물의 제작 방법
JP4386002B2 (ja) * 2004-07-06 2009-12-16 株式会社デンソー 半導体力学量センサの製造方法
FR2881416B1 (fr) * 2005-01-31 2007-06-01 St Microelectronics Crolles 2 Microresonateur
FR2894386B1 (fr) * 2005-12-06 2008-02-29 Commissariat Energie Atomique Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor
FR2901263B1 (fr) * 2006-05-18 2008-10-03 Commissariat Energie Atomique Dispositif sensible a un mouvement comportant au moins un transistor
US8076738B2 (en) * 2007-09-28 2011-12-13 Infineon Technologies Ag Integrally fabricated micromachine and logic elements
US8704314B2 (en) * 2007-12-06 2014-04-22 Massachusetts Institute Of Technology Mechanical memory transistor
US20100171569A1 (en) * 2008-11-18 2010-07-08 Ecole Polytechnique Federale De Lausanne (Epfl) Active double or multi gate micro-electro-mechanical device with built-in transistor
DE102009001856A1 (de) 2009-03-25 2010-09-30 Robert Bosch Gmbh Vorrichtung zum resonanten Antreiben eines mikromechanischen Systems
US8466535B2 (en) * 2011-08-12 2013-06-18 National Semiconductor Corporation Galvanic isolation fuse and method of forming the fuse
US8947110B2 (en) * 2011-09-22 2015-02-03 Nissan North America, Inc. Suspension device for a membrane test system
DE102011089261B4 (de) * 2011-12-20 2014-11-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transistorstruktur, Verfahren zur Herstellung einer Transistorstruktur, Kraftmesssystem
WO2014059080A1 (fr) * 2012-10-12 2014-04-17 Texas State University-San Marcos Transistor à effet de champ à grille isolée mobile verticalement (vmgfet) sur une tranche de silicium sur isolant (soi), et procédé de fabrication d'un vmgfet
KR20160004069A (ko) * 2014-07-02 2016-01-12 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
CN111063727B (zh) * 2019-12-23 2022-10-25 武汉新芯集成电路制造有限公司 半导体器件及其形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413573A (en) * 1965-06-18 1968-11-26 Westinghouse Electric Corp Microelectronic frequency selective apparatus with vibratory member and means responsive thereto
DE3515349A1 (de) * 1985-04-27 1986-10-30 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Elektrischer geber zur messung mechanischer groessen
US4767973A (en) * 1987-07-06 1988-08-30 Sarcos Incorporated Systems and methods for sensing position and movement
DE4000496A1 (de) * 1989-08-17 1991-02-21 Bosch Gmbh Robert Verfahren zur strukturierung eines halbleiterkoerpers
CA2154357C (fr) * 1993-02-04 2004-03-02 Kevin A. Shaw Microstructures et methode a un seul masque et a cristal unique pour leur obtention
JP3303430B2 (ja) * 1993-05-21 2002-07-22 株式会社デンソー Ｆｅｔ型加速度センサ
JP3269274B2 (ja) * 1994-03-15 2002-03-25 株式会社デンソー 加速度センサ
SG68630A1 (en) * 1996-10-18 1999-11-16 Eg & G Int Isolation process for surface micromachined sensors and actuators
US6043524A (en) * 1997-02-03 2000-03-28 Motorola, Inc. Transducer and interface circuit
US5903038A (en) * 1997-06-30 1999-05-11 Motorola, Inc. Semiconductor sensing device and method for fabricating the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0198200A1 *

Also Published As

Publication number Publication date
US6849912B2 (en) 2005-02-01
US20030173611A1 (en) 2003-09-18
DE10029501C1 (de) 2001-10-04
WO2001098200A1 (fr) 2001-12-27
JP2004513506A (ja) 2004-04-30

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