EP1261083A1 - Treiberschaltung, Messschaltung und zugehörige Verstärkerschaltung - Google Patents

Treiberschaltung, Messschaltung und zugehörige Verstärkerschaltung Download PDF

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Publication number
EP1261083A1
EP1261083A1 EP01304662A EP01304662A EP1261083A1 EP 1261083 A1 EP1261083 A1 EP 1261083A1 EP 01304662 A EP01304662 A EP 01304662A EP 01304662 A EP01304662 A EP 01304662A EP 1261083 A1 EP1261083 A1 EP 1261083A1
Authority
EP
European Patent Office
Prior art keywords
input
circuit apparatus
insulated gate
terminal
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01304662A
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English (en)
French (fr)
Inventor
Barry John Vaugham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Priority to EP01304662A priority Critical patent/EP1261083A1/de
Priority to US10/118,566 priority patent/US20020175766A1/en
Publication of EP1261083A1 publication Critical patent/EP1261083A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks

Definitions

  • the present invention relates to an amplifier circuit apparatus of the type used in a measuring circuit of a driver circuit for measuring mean output power of a laser device, for example a semiconductor laser device, such as a Fabri-Perot semiconductor laser.
  • a laser device for example a semiconductor laser device, such as a Fabri-Perot semiconductor laser.
  • a known laser driver circuit comprises a control loop arranged to control bias current to a laser device.
  • a measured voltage corresponding to a measured mean power output of the laser device is compared with a predetermined reference voltage and the bias current is adjusted in response to any difference between the measured voltage and the predetermined reference voltage.
  • the mean power output of the laser device is measured by disposing a photodiode sufficiently close to a back facet of the laser device to receive light emitted from the back facet.
  • the voltage drop across the resistor is applied to an inverting input of an operational amplifier arranged to generate an accumulating signal indicative of a deviation of the voltage drop from a predetermined voltage level (applied to a non-inverting input of the operational amplifier) corresponding to the predetermined output power.
  • the operational amplifier draws a parasitic current into the inverting input, some known operational amplifiers drawing up to twenty percent of the current generated by the photodiode subject to, for example, changes in temperature of the operational amplifier. Siphoning-off the current generated by photodiode lowers the voltage drop across the resistor and consequently the voltage drop applied at the inverting input of the operational amplifier. Hence, it can be seen that measurement of the mean power output of the laser device will be inaccurate.
  • a known solution to reduce the parasitic current comprises ensuring the current generated by the photodiode does not drop to a level sufficiently low for the parasitic current to be a significant proportion of the current generated by the photodiode.
  • an amplifier circuit apparatus for a measuring circuit capable of measuring mean power output of a laser device, the apparatus comprising an input stage having a first input, and an output stage, characterised in that the input stage is adapted so as substantially not to draw an electric current through the first input.
  • the input stage is adapted to comprise a first insulated gate field effect active device having a control input, the control input corresponding to the first input of the input stage.
  • insulated gate field effect active devices is intended to include metal oxide field effect active devices, for example Metal Oxide Field Effect Transistors (MOSFETs).
  • MOSFETs Metal Oxide Field Effect Transistors
  • the input stage also comprises non-insulated gate active devices, for example, bipolar transistors.
  • the output stage comprises non-insulated gate active devices, for example, bipolar transistors.
  • the input stage comprises a differential pair topology, the differential pair topology comprising the first insulated gate active device and a second insulated gate active device.
  • the first insulated gate active device is a first Insulated Gate Field Effect Transistor (IGFET) and the second insulated gate active device is a second IGFET.
  • IGFET Insulated Gate Field Effect Transistor
  • the input stage comprises a second input. More preferably, the second input is a control input of the second insulated gate active device.
  • a measuring circuit apparatus for measuring mean power output of a laser device, the apparatus comprising an amplifier circuit apparatus as set forth above in relation to the first aspect of the present invention.
  • the apparatus further comprises a transducer arranged to translate an optical signal into a voltage signal and apply the voltage signal to the first input of the input stage.
  • a driver circuit apparatus for a laser device comprising the apparatus as set forth above in relation to the first or second aspects of the present invention.
  • an optical communications network comprising the apparatus as set forth in relation to any one of the first, second or third aspects of the present invention.
  • a monitoring circuit 100 comprises a first supply rail 102 at a first potential (V cc ) coupled to a cathode of a photodiode 104.
  • An anode of the photodiode 104 is coupled to a first terminal of a first resistor 106 and a first terminal of a second resistor 108, a second terminal of the second resistor 108 being coupled to a second supply rail 110 at a second potential (V ee ).
  • a second terminal of the first resistor 106 is coupled to an inverting input terminal 112 of an operational amplifier 114.
  • An output terminal 116 of the operational amplifier 114 is coupled to a first terminal of a capacitor 118, a second terminal of the capacitor 118 being coupled to the inverting input terminal 112;
  • the operational amplifier 114 also comprises a non-inverting input terminal 120 and, although not illustrated, the operational amplifier 114 is coupled to the first and second supply rails 102, 110.
  • the first resistor 106, the operational amplifier 114 and the capacitor 118 form an averaging configuration known in the art capable of generating an output signal indicative of a mean deviation of a first input signal from a second input signal.
  • the operational amplifier 114 comprises an input stage 200 ( Figure 2) and an output stage (not shown).
  • the output stage can be any compatible output stage known in the art depending upon the application for which the operational amplifier 114 is required.
  • the output stage comprises bipolar active devices, such as bipolar transistors, due to a need for a low capacitance active device to drive a semiconductor laser device at a high data rate.
  • the operational amplifier 114 can comprise a number of intermediate stages (not shown) between the input stage 200 and the output stage.
  • a first supply terminal 202 is coupled to the first supply rail 102 and an emitter terminal of a first PNP transistor 204 and an emitter terminal of a second PNP transistor 206.
  • a base terminal of the first PNP transistor 204 is coupled to a base terminal of the second PNP transistor 206 and a collector terminal of the first PNP transistor 204.
  • the collector terminal of the first PNP transistor 204 is coupled to a drain terminal of a first MOSFET 208, a source terminal of the first MOSFET 208 being coupled to a first terminal of a current source 212.
  • a second terminal of the current source 212 is coupled to a second supply terminal 214, the second supply terminal 214 being coupled to the second supply rail 110.
  • a collector terminal of the second PNP transistor 206 is coupled to a drain terminal of a second MOSFET 210, a source terminal of the second MOSFET 210 being coupled to the first terminal of the current source 212.
  • a gate terminal of the first MOSFET 208 is coupled to the inverting input terminal 112 and the gate terminal of the second MOSFET 210 is coupled to the non-inverting input terminal 120.
  • first and second PNP transistors 204, 208, the first and second MOSFETs 208, 210 and the current source 212 are arranged to form what is known in the art as a "differential pair with current mirror load" configuration.
  • the voltage signal is averaged by the averaging configuration to form a mean power output and the mean power output is compared with a predetermined output power level, an output signal at the output terminal 116 of the operational amplifier 114 corresponding to a deviation of the voltage signal from the predetermined output power level.
  • the output signal is then used by a control circuit (not shown) to adjust a bias current of the laser device.
  • the operational amplifier 114 of the integrator circuit configuration operates in a like manner to any other operational amplifier.
  • the input stage operates in a like manner to any differential pair configuration known in the art.
  • the use of the first and second MOSFETs 208, 210 results in the inverting and non-inverting input terminals having infinite, or as near as practicably possible infinite, input impedance to DC signals. Therefore, no parasitic current flows through the non-inverting input terminal 120 and, more importantly, through the inverting input terminal 112.
  • the first and second MOSFETs 208, 210 are employed in the input stage 200, it should be appreciated that any type of active device having a control terminal that does not draw an electric current, for example any Insulated Gate Field Effect Transistor (IGFET), can be employed.
  • IGFET Insulated Gate Field Effect Transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Amplifiers (AREA)
EP01304662A 2001-05-25 2001-05-25 Treiberschaltung, Messschaltung und zugehörige Verstärkerschaltung Withdrawn EP1261083A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01304662A EP1261083A1 (de) 2001-05-25 2001-05-25 Treiberschaltung, Messschaltung und zugehörige Verstärkerschaltung
US10/118,566 US20020175766A1 (en) 2001-05-25 2002-04-09 Driver circuit apparatus, measuring circuit apparatus and amplifier circuit apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01304662A EP1261083A1 (de) 2001-05-25 2001-05-25 Treiberschaltung, Messschaltung und zugehörige Verstärkerschaltung

Publications (1)

Publication Number Publication Date
EP1261083A1 true EP1261083A1 (de) 2002-11-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP01304662A Withdrawn EP1261083A1 (de) 2001-05-25 2001-05-25 Treiberschaltung, Messschaltung und zugehörige Verstärkerschaltung

Country Status (2)

Country Link
US (1) US20020175766A1 (de)
EP (1) EP1261083A1 (de)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4258331A (en) * 1978-04-18 1981-03-24 Pioneer Electronic Corporation Differential amplifier
US4521741A (en) * 1981-10-22 1985-06-04 Akg Akustische U.Kino-Gerate Gesellschaft M.B.H. Impedance transformer circuit
EP0434466A2 (de) * 1989-12-21 1991-06-26 Kabushiki Kaisha Toshiba Steuervorrichtung für Halbleiterlaser mit stabilisierter Rückkopplung
US5317280A (en) * 1993-09-21 1994-05-31 Hewlett-Packard Company High impedance circuit using PFET
US5638026A (en) * 1994-07-29 1997-06-10 Kabushiki Kaisha Toshiba High input impedance circuit and semiconductor integrated device provided therewith
JPH1146032A (ja) * 1997-07-24 1999-02-16 Fujikura Ltd 光送信装置
JPH11154834A (ja) * 1997-11-21 1999-06-08 Nec Ic Microcomput Syst Ltd 演算増幅器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4258331A (en) * 1978-04-18 1981-03-24 Pioneer Electronic Corporation Differential amplifier
US4521741A (en) * 1981-10-22 1985-06-04 Akg Akustische U.Kino-Gerate Gesellschaft M.B.H. Impedance transformer circuit
EP0434466A2 (de) * 1989-12-21 1991-06-26 Kabushiki Kaisha Toshiba Steuervorrichtung für Halbleiterlaser mit stabilisierter Rückkopplung
US5317280A (en) * 1993-09-21 1994-05-31 Hewlett-Packard Company High impedance circuit using PFET
US5638026A (en) * 1994-07-29 1997-06-10 Kabushiki Kaisha Toshiba High input impedance circuit and semiconductor integrated device provided therewith
JPH1146032A (ja) * 1997-07-24 1999-02-16 Fujikura Ltd 光送信装置
JPH11154834A (ja) * 1997-11-21 1999-06-08 Nec Ic Microcomput Syst Ltd 演算増幅器

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 05 31 May 1999 (1999-05-31) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30) *

Also Published As

Publication number Publication date
US20020175766A1 (en) 2002-11-28

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