EP1231607A3 - Nichtflüchtige magnetische Speicheranordnung - Google Patents
Nichtflüchtige magnetische Speicheranordnung Download PDFInfo
- Publication number
- EP1231607A3 EP1231607A3 EP02090057A EP02090057A EP1231607A3 EP 1231607 A3 EP1231607 A3 EP 1231607A3 EP 02090057 A EP02090057 A EP 02090057A EP 02090057 A EP02090057 A EP 02090057A EP 1231607 A3 EP1231607 A3 EP 1231607A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- wiring conductor
- storage device
- magnetic storage
- ability
- nonvolatile magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 abstract 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001035860A JP3677455B2 (ja) | 2001-02-13 | 2001-02-13 | 不揮発性磁気記憶装置およびその製造方法 |
JP2001035860 | 2001-02-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1231607A2 EP1231607A2 (de) | 2002-08-14 |
EP1231607A3 true EP1231607A3 (de) | 2004-05-19 |
Family
ID=18899237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02090057A Withdrawn EP1231607A3 (de) | 2001-02-13 | 2002-02-13 | Nichtflüchtige magnetische Speicheranordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6643168B2 (de) |
EP (1) | EP1231607A3 (de) |
JP (1) | JP3677455B2 (de) |
KR (1) | KR20020066987A (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003197875A (ja) * | 2001-12-28 | 2003-07-11 | Toshiba Corp | 磁気記憶装置 |
JP2003208784A (ja) * | 2002-01-10 | 2003-07-25 | Nec Corp | 不揮発性磁気記憶装置 |
US6891193B1 (en) * | 2002-06-28 | 2005-05-10 | Silicon Magnetic Systems | MRAM field-inducing layer configuration |
JP4404182B2 (ja) * | 2002-09-25 | 2010-01-27 | Tdk株式会社 | 磁気メモリデバイスおよびその読出方法 |
US7020015B1 (en) * | 2002-10-03 | 2006-03-28 | Idaho Research Foundation, Inc. | Magnetic elements having unique shapes |
JP2004172218A (ja) * | 2002-11-18 | 2004-06-17 | Sony Corp | 磁気記憶素子及びその記録方法、並びに磁気記憶装置 |
US6956257B2 (en) * | 2002-11-18 | 2005-10-18 | Carnegie Mellon University | Magnetic memory element and memory device including same |
JP3766380B2 (ja) * | 2002-12-25 | 2006-04-12 | 株式会社東芝 | 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法 |
US6785160B1 (en) * | 2003-04-29 | 2004-08-31 | Hewlett-Packard Development Company, L.P. | Method of providing stability of a magnetic memory cell |
JP4590862B2 (ja) * | 2003-12-15 | 2010-12-01 | ソニー株式会社 | 磁気メモリ装置及びその製造方法 |
JP2005203389A (ja) * | 2004-01-13 | 2005-07-28 | Sharp Corp | 不揮発性半導体記憶装置の製造方法 |
US8263961B2 (en) * | 2004-04-16 | 2012-09-11 | Panasonic Corporation | Thin film memory device having a variable resistance |
JP2006120824A (ja) * | 2004-10-21 | 2006-05-11 | Renesas Technology Corp | 磁気記憶装置 |
KR100885184B1 (ko) | 2007-01-30 | 2009-02-23 | 삼성전자주식회사 | 전기장 및 자기장에 의해 독립적으로 제어될 수 있는 저항특성을 갖는 메모리 장치 및 그 동작 방법 |
JP5080102B2 (ja) | 2007-02-27 | 2012-11-21 | ルネサスエレクトロニクス株式会社 | 磁気記憶装置の製造方法および磁気記憶装置 |
US8659852B2 (en) | 2008-04-21 | 2014-02-25 | Seagate Technology Llc | Write-once magentic junction memory array |
US8564079B2 (en) | 2008-04-21 | 2013-10-22 | Qualcomm Incorporated | STT MRAM magnetic tunnel junction architecture and integration |
US7852663B2 (en) | 2008-05-23 | 2010-12-14 | Seagate Technology Llc | Nonvolatile programmable logic gates and adders |
US7855911B2 (en) | 2008-05-23 | 2010-12-21 | Seagate Technology Llc | Reconfigurable magnetic logic device using spin torque |
US7881098B2 (en) | 2008-08-26 | 2011-02-01 | Seagate Technology Llc | Memory with separate read and write paths |
US7985994B2 (en) | 2008-09-29 | 2011-07-26 | Seagate Technology Llc | Flux-closed STRAM with electronically reflective insulative spacer |
US8169810B2 (en) | 2008-10-08 | 2012-05-01 | Seagate Technology Llc | Magnetic memory with asymmetric energy barrier |
US8089132B2 (en) * | 2008-10-09 | 2012-01-03 | Seagate Technology Llc | Magnetic memory with phonon glass electron crystal material |
US8039913B2 (en) | 2008-10-09 | 2011-10-18 | Seagate Technology Llc | Magnetic stack with laminated layer |
US8045366B2 (en) | 2008-11-05 | 2011-10-25 | Seagate Technology Llc | STRAM with composite free magnetic element |
US8043732B2 (en) | 2008-11-11 | 2011-10-25 | Seagate Technology Llc | Memory cell with radial barrier |
US7826181B2 (en) | 2008-11-12 | 2010-11-02 | Seagate Technology Llc | Magnetic memory with porous non-conductive current confinement layer |
US8289756B2 (en) | 2008-11-25 | 2012-10-16 | Seagate Technology Llc | Non volatile memory including stabilizing structures |
US7826259B2 (en) * | 2009-01-29 | 2010-11-02 | Seagate Technology Llc | Staggered STRAM cell |
JP2011009531A (ja) * | 2009-06-26 | 2011-01-13 | Tdk Corp | スピン伝導素子 |
US7999338B2 (en) | 2009-07-13 | 2011-08-16 | Seagate Technology Llc | Magnetic stack having reference layers with orthogonal magnetization orientation directions |
US8681536B2 (en) * | 2010-01-15 | 2014-03-25 | Qualcomm Incorporated | Magnetic tunnel junction (MTJ) on planarized electrode |
JP2012114215A (ja) * | 2010-11-24 | 2012-06-14 | Elpida Memory Inc | 半導体装置及びそのレイアウト方法 |
US8975891B2 (en) * | 2011-11-04 | 2015-03-10 | Honeywell International Inc. | Apparatus and method for determining in-plane magnetic field components of a magnetic field using a single magnetoresistive sensor |
TWI445225B (zh) * | 2011-11-07 | 2014-07-11 | Voltafield Technology Corp | 磁阻元件結構形成方法 |
JP5476434B2 (ja) * | 2012-07-31 | 2014-04-23 | ルネサスエレクトロニクス株式会社 | 磁気記憶装置の製造方法および磁気記憶装置 |
US9972775B2 (en) | 2015-03-12 | 2018-05-15 | Globalfoundries Singapore Pte. Ltd. | Integrated magnetic random access memory with logic device having low-k interconnects |
US10199572B2 (en) * | 2015-05-27 | 2019-02-05 | Globalfoundries Singapore Pte. Ltd. | Integrated magnetic random access memory with logic device |
US10446607B2 (en) | 2016-12-28 | 2019-10-15 | GLOBALFOUNDARIES Singapore Pte. Ltd. | Integrated two-terminal device with logic device for embedded application |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347485A (en) * | 1992-03-03 | 1994-09-13 | Mitsubishi Denki Kabushiki Kaisha | Magnetic thin film memory |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5936293A (en) * | 1998-01-23 | 1999-08-10 | International Business Machines Corporation | Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer |
US6097625A (en) * | 1998-07-16 | 2000-08-01 | International Business Machines Corporation | Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes |
US6111783A (en) * | 1999-06-16 | 2000-08-29 | Hewlett-Packard Company | MRAM device including write circuit for supplying word and bit line current having unequal magnitudes |
US6163477A (en) * | 1999-08-06 | 2000-12-19 | Hewlett Packard Company | MRAM device using magnetic field bias to improve reproducibility of memory cell switching |
EP1174925A2 (de) * | 2000-07-21 | 2002-01-23 | Hewlett-Packard Company | Leiterbahnanordnung zum Datenschreiben in magnetischem Speicher |
DE10133646A1 (de) * | 2000-09-22 | 2002-04-18 | Mitsubishi Electric Corp | Magnetdünnfilmspeichervorrichtung zum schnellen und stabilen Lesen von Daten |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4944836A (en) | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
US4788813A (en) | 1988-01-13 | 1988-12-06 | Ford New Holland, Inc. | Metal detection in the vicinity of ferrous boundaries |
US6169686B1 (en) * | 1997-11-20 | 2001-01-02 | Hewlett-Packard Company | Solid-state memory with magnetic storage cells |
US5946227A (en) * | 1998-07-20 | 1999-08-31 | Motorola, Inc. | Magnetoresistive random access memory with shared word and digit lines |
US6034887A (en) | 1998-08-05 | 2000-03-07 | International Business Machines Corporation | Non-volatile magnetic memory cell and devices |
JP2000195250A (ja) | 1998-12-24 | 2000-07-14 | Toshiba Corp | 磁気メモリ装置 |
US6165803A (en) | 1999-05-17 | 2000-12-26 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
JP3589346B2 (ja) | 1999-06-17 | 2004-11-17 | 松下電器産業株式会社 | 磁気抵抗効果素子および磁気抵抗効果記憶素子 |
JP4050446B2 (ja) | 2000-06-30 | 2008-02-20 | 株式会社東芝 | 固体磁気メモリ |
US6385082B1 (en) * | 2000-11-08 | 2002-05-07 | International Business Machines Corp. | Thermally-assisted magnetic random access memory (MRAM) |
-
2001
- 2001-02-13 JP JP2001035860A patent/JP3677455B2/ja not_active Expired - Fee Related
-
2002
- 2002-02-08 KR KR1020020007367A patent/KR20020066987A/ko not_active Application Discontinuation
- 2002-02-08 US US10/067,864 patent/US6643168B2/en not_active Expired - Lifetime
- 2002-02-13 EP EP02090057A patent/EP1231607A3/de not_active Withdrawn
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347485A (en) * | 1992-03-03 | 1994-09-13 | Mitsubishi Denki Kabushiki Kaisha | Magnetic thin film memory |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5936293A (en) * | 1998-01-23 | 1999-08-10 | International Business Machines Corporation | Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer |
US6097625A (en) * | 1998-07-16 | 2000-08-01 | International Business Machines Corporation | Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes |
US6111783A (en) * | 1999-06-16 | 2000-08-29 | Hewlett-Packard Company | MRAM device including write circuit for supplying word and bit line current having unequal magnitudes |
US6163477A (en) * | 1999-08-06 | 2000-12-19 | Hewlett Packard Company | MRAM device using magnetic field bias to improve reproducibility of memory cell switching |
EP1174925A2 (de) * | 2000-07-21 | 2002-01-23 | Hewlett-Packard Company | Leiterbahnanordnung zum Datenschreiben in magnetischem Speicher |
DE10133646A1 (de) * | 2000-09-22 | 2002-04-18 | Mitsubishi Electric Corp | Magnetdünnfilmspeichervorrichtung zum schnellen und stabilen Lesen von Daten |
Non-Patent Citations (2)
Title |
---|
ASADA H ET AL: "MICROMAGNETIC STUDY ON WRITE OPERATION IN SUBMICRON MAGNETIC RANDOMACCESS MEMORY CELL", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 79, no. 8, PART 2B, 15 April 1996 (1996-04-15), pages 6646 - 6648, XP000695104, ISSN: 0021-8979 * |
WANG Z G ET AL: "FEASIBILITY OF ULTRA-DENSE SPIN-TUNNELING RANDOM ACCESS MEMORY", IEEE TRANSACTIONS ON MAGNETICS, IEEE INC. NEW YORK, US, vol. 33, no. 6, November 1997 (1997-11-01), pages 4498 - 4512, XP000831059, ISSN: 0018-9464 * |
Also Published As
Publication number | Publication date |
---|---|
KR20020066987A (ko) | 2002-08-21 |
JP2002246565A (ja) | 2002-08-30 |
US6643168B2 (en) | 2003-11-04 |
JP3677455B2 (ja) | 2005-08-03 |
US20020109172A1 (en) | 2002-08-15 |
EP1231607A2 (de) | 2002-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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AK | Designated contracting states |
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RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: NEC ELECTRONICS CORPORATION |
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PUAL | Search report despatched |
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17P | Request for examination filed |
Effective date: 20040527 |
|
AKX | Designation fees paid |
Designated state(s): DE GB |
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17Q | First examination report despatched |
Effective date: 20050601 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20051012 |