EP1225641A2 - Module semiconducteur photonique et son procédé de fabrication - Google Patents

Module semiconducteur photonique et son procédé de fabrication Download PDF

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Publication number
EP1225641A2
EP1225641A2 EP02001344A EP02001344A EP1225641A2 EP 1225641 A2 EP1225641 A2 EP 1225641A2 EP 02001344 A EP02001344 A EP 02001344A EP 02001344 A EP02001344 A EP 02001344A EP 1225641 A2 EP1225641 A2 EP 1225641A2
Authority
EP
European Patent Office
Prior art keywords
photo
light
semiconductor device
circuit board
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02001344A
Other languages
German (de)
English (en)
Other versions
EP1225641A3 (fr
Inventor
Masahiro Ono
Minehiro Itagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of EP1225641A2 publication Critical patent/EP1225641A2/fr
Publication of EP1225641A3 publication Critical patent/EP1225641A3/fr
Withdrawn legal-status Critical Current

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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
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    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
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    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
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Definitions

  • the invention relates to a photo-semiconductor module and a method for manufacturing the same.
  • the optical fiber features "small loss”, “small diameter”, and “light weight” to thereby reduce the loss significantly as compared to a conventional metallic cable. This difference is remarkable in high speed transmission of signals.
  • ONU Optical Network Unit
  • a super-lattice avalanche photo-diode hereinafter abbreviated as APD
  • PinPD Pin-photodiode
  • a photo-semiconductor module of the invention comprises a circuit board, a light-receiving photo-semiconductor device which is flip-chip-wise mounted on this circuit board, and an optical fiber which is fixed to the mounting face or its back face of the light-receiving photo-semiconductor device.
  • This configuration of the invention makes it possible to connect a light-receiving photo-semiconductor device to the circuit board with a short wiring distance, thus improving the high-frequency characteristic.
  • the flip-chip-wise mounting method makes it possible to directly radiate heat from the back face of the light-receiving photo-semiconductor device, thus improving the hear radiation performance as compared to a conventional packaging method (by use of a resin-molded product).
  • an optical fiber can be slid on the mounting face or its back face of the light-receiving photo-semiconductor device so that it may be fixed at such a point thereon so as to give the largest light receiving sensitivity, in order to enable alignment while preserving sufficient output properties, thus reducing the manufacturing costs.
  • the back face of a light-receiving photo-semiconductor device is mirror-face finished often, thus having good flatness originally. This feature facilitates alignment and fixing of an optical fiber onto the back face of the device, thus further improving the productivity.
  • the optical fiber may expectedly slid in an alignment groove formed in the surface of the circuit board.
  • the groove must be machined at a high precision level and also be aligned with the light-receiving photo-semiconductor device at a high accuracy, thus contributing to an increase in the manufacturing costs.
  • the light-receiving photo-semiconductor device has a photo-absorbing layer formed therein, so that preferably the optical fiber is fixed as opposed to this photo-absorbing layer in a direction perpendicular to the mounting surface.
  • a photo-absorbing layer formed therein, so that preferably the optical fiber is fixed as opposed to this photo-absorbing layer in a direction perpendicular to the mounting surface.
  • the circuit board has a connection electrode, so that preferably the input/output terminal electrodes of the light-receiving photo-semiconductor device are connected to this connection electrode via a protruding electrode and a conductive adhesive agent.
  • the circuit board has a connection electrode, so that preferably the input/output terminal electrodes of the light-receiving photo-semiconductor device are connected to this connection electrode via solder.
  • Such a configuration makes it possible to securely connect the device to the circuit board with a short wiring distance, thus further improving the high-frequency characteristic.
  • the surroundings of a connection between the input/output terminal electrodes and the connection electrode are encapsulated with an encapsulating resin.
  • the opposing portion between the light-receiving photo-semiconductor device and the circuit board except the connection between the input/output terminal electrodes and the connection electrode is encapsulated with the encapsulating resin.
  • the back face is provided with a mounting hole toward the mounting face so that the optical fiber may preferably be inserted into it and fixed. This configuration facilitates and ensures the fixation of the optical fiber.
  • the mounting hole has such a depth that extends to a vicinity of the photo-absorbing layer of the light-receiving photo-semiconductor device.
  • the photo-absorbing efficiency can be improved further.
  • the light-receiving photo-semiconductor device employs a compound semiconductor substrate having a Pin-photodiode.
  • a Pin-photodiode By thus using the Pin-photodiode, it is possible to obtain a photo-semiconductor module stable in characteristics and reliabilities.
  • the circuit board has a connection electrode, so that preferably the connection electrode connected to either one of the P-side electrode and the N-side electrode of the Pin-photodiode is provided at such a site on the circuit board that is opposed to a periphery of the light-receiving photo-semiconductor device.
  • a connection electrode so that preferably the connection electrode connected to either one of the P-side electrode and the N-side electrode of the Pin-photodiode is provided at such a site on the circuit board that is opposed to a periphery of the light-receiving photo-semiconductor device.
  • an auxiliary mounting plate with a through-hole is further comprised, so that preferably the auxiliary mounting plate is fixed to the back face with the optical fiber as inserted and fixed to the through-hole to thereby fix the optical fiber to the light-receiving photo-semiconductor device, thus facilitating and securing the fixation of the optical fiber.
  • an encapsulating resin is comprised to encapsulate the surroundings of a connection between the input/output terminal electrodes and the connection electrode to thereby fix the auxiliary mounting plate to the back face with this encapsulating resin, thus further facilitating and securing the fixation of the optical fiber.
  • a photo-semiconductor module of the invention can be manufactured by a method comprising the steps of: forming a protruding electrode on the input/output terminal electrode provided on the mounting face to then give a conductive adhesive agent to this protruding electrode; installing the light-receiving photo-semiconductor device to the circuit board in such a manner that the input/output terminal electrode may butt against the connection electrode provided on the circuit board; hardening the conductive adhesive agent to mount the light-receiving photo-semiconductor device to the circuit board; encapsulating a connection site between the light-receiving photo-semiconductor device and the circuit board with an encapsulating resin; and fixing an optical fiber to the back face.
  • a photo-semiconductor module of the invention can be manufactured by a method comprising the steps of: supplying solder to a connection electrode provided on the circuit board; installing the light-receiving photo-semiconductor device to the circuit board in such a manner that the input/output terminal electrode provided on the mounting face may butt against the connection electrode; melting the solder to mount the light-receiving photo-semiconductor device to the circuit board, encapsulating a connection site between the light-receiving photo-semiconductor device and the circuit board with an encapsulating resin; and fixing an optical fiber to the back face.
  • a photo-hardening resin is used as the optical-fiber fixing adhesive agent and the encapsulating resin to thereby photo-harden both these encapsulating resin and optical-fiber fixing resin simultaneously, thus simplifying the step of hardening these resins.
  • the protruding electrode is formed on the terminal electrode with both the shorter-side faces of the compound semiconductor substrate as sandwiched by a jig to thereby enable avoiding damaging of the light-receiving photo-semiconductor device made of even such a relatively brittle substance as a compound semiconductor substrate.
  • a light-receiving photo-semiconductor device to the circuit board using solder, preferably heat and load are inflicted on the solder to thereby produce a diffused compound between the solder and the input/output terminal electrode, thus enabling securely interconnecting the connection electrode and the input/output terminal electrode without performing an extra step of applying flux to the solder.
  • FIG. 1 outlines a photo-semiconductor module according to the first preferred embodiment of the invention.
  • This photo-semiconductor module has a light-receiving photo-semiconductor device A formed on a compound semiconductor substrate B.
  • the compound semiconductor substrate B is made of an InP substrate etc., in which is provided a Pin-photodiode 1 (hereinafter abbreviated as PinPD), which is a photoreceptor element.
  • PinPD Pin-photodiode 1
  • a mounting face A 1 of the light-receiving photo-semiconductor device A is provided with an input/output terminal electrode 2.
  • a protruding electrode 3 On the input/output terminal electrode 2 is formed a protruding electrode 3.
  • the protruding electrode 3 is electrically connected and fixed onto a connection electrode 6 of a circuit board 7 via a conductive adhesive agent 4.
  • a connection between the input/output terminal electrode 2 and the connection electrode 6 (opposing portion between the circuit board 7 and the compound semiconductor substrate B) is encapsulated and reinforced by an encapsulating resin 5.
  • This causes the light-receiving photo-semiconductor device A to be mounted to the circuit board 7.
  • the encapsulating resin 5 only needs to reinforce at least the surroundings of the connection.
  • the protruding electrode 3 may be formed by wire bonding, plating, or any other method.
  • the light-receiving photo-semiconductor device A having the PinPD1 thereon is mounted flip-chip-wise to the circuit board 7.
  • a back face A 2 (opposite to the mounting face A 1 ) of the mounting face A 1 (on which the input/output terminal electrode is formed) of the light-receiving photo-semiconductor device A is adhered and fixed an optical fiber 8.
  • a tip of the optical fiber 8 is adhered to the light-receiving photo-semiconductor device A using an adhesive agent 9 made of a thermo-hardening resin etc. Note here that to efficiently guide light into the PinPD1, the tip of the optical fiber 8 is positioned as opposed to the photo-absorbing layer of the PinPD1.
  • Such a configuration of this embodiment makes it possible to connect the light-receiving photo-semiconductor device A to the circuit board 7 with a short wiring distance. This enables realizing a photo-semiconductor module excellent in high-frequency characteristic. Also, by mounting the light-receiving photo-semiconductor device A flip-chip-wise, heat can be directly radiated from the mounting face A 1 of this device to the circuit board 7, thus providing a construction excellent also in hear radiation performance as compared to a conventional package construction (of a resin-molded product) .
  • the optical fiber 8 can be slid on the back face A 2 to thereby fix at such a position as to provide a largest light receiving sensitivity, so that it can be aligned easily to also preserve an excellent light receiving characteristic.
  • the back face A 2 of the light-receiving photo-semiconductor device A is often mirror-face finished to preserve good flatness, thus increasing the productivity of the photo-semiconductor module.
  • a groove may expectedly be formed in the surface of the circuit board 7 so that the optical fiber 8 may be slid therein.
  • Such a configuration needs to give a high precision level in machining of the groove as well as in alignment thereof with the light-receiving photo-semiconductor device A, thus contributing to an increase in the manufacturing costs.
  • a light-receiving photo-semiconductor device to be realized by the invention.
  • a light-receiving photo-semiconductor device as a PinPD or APD
  • the mounting face A 1 is formed in parallel with the face direction of the stack film.
  • the optical fiber 8 is fixed to the mounting face A 1 to thereby obtain the above-mentioned effects.
  • the mounting face A 1 is formed in parallel to the face direction of the stack film.
  • this embodiment interconnects the light-receiving photo-semiconductor device A and the circuit board 7 using the protruding electrode 3 and the conductive adhesive agent 4, the invention is not limited thereto; for example, any method may be employed such as interconnection by use of a protruding electrode and solder, an anisotropic conductive film (ACF), anisotropic conductive paste (ACP), solder and solder, or a metal and a metal.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • the photo-semiconductor module By mounting the light-receiving photo-semiconductor device A to the connection electrode 6 of the circuit board 7 via the protruding electrode 3 and the conductive adhesive agent 4, the photo-semiconductor module is made.
  • the inventor measured the photo-semiconductor module having such a configuration of the embodiment.
  • FIG. 2A indicates a result of measuring an increase in the dark current when a solder heat test (270 °C, 5 cycles) was conducted under the conditions of a reverse-bias application voltage of 0-15V.
  • FIG. 2B indicates a result of measuring an increase of the dark current when a high-temperature, high-humidity test was conducted under the conditions of a temperature of 85 °C, a humidity of 85 %RH, and a time of 1712 hours.
  • FIGS. 2C-1 and 2C-2 indicate a result of measuring an increase in the dark current when a temperature cycle test (-40 °C to 125 °C) was conducted 400 cycles.
  • the photo-semiconductor module of this embodiment exhibited little deterioration in the dark current, proving an excellent reliability of the construction of this embodiment.
  • This is considered to be partly because the light-receiving photo-semiconductor device A is connected to the circuit board 7 with a short wiring distance.
  • the light-receiving photo-semiconductor device A is mounted via the conductive adhesive agent 4 to the circuit board 7, so that this mounting requires only a relatively small application pressure (40g/terminal electrode for the formation of the protruding electrode and 5g/terminal electrode for the mounting), thus avoiding damaging the light-receiving photo-semiconductor device A.
  • the photo-absorbing layer of the PinPD1 is made of any combination of at least II-group elements of Zn, Cd, and Hg, III-group elements of B, Al, Ga, In, and TI, V-group elements of N, P, As, Sb, and Bi, and VI-group elements of O, S, Se, Te, and Po.
  • a conductive filler of the conductive adhesive agent 4 contains at least one of Ag, Pd, Ni, Au, Cu, C, and Pt.
  • the encapsulating resin 5 contains an epoxy-based resin as its main component and also inorganic particulate.
  • the inorganic particulate includes SiO 2 , Al 2 O 3 , SiN, AlN etc.
  • a super-lattice avalanche photodiode has a basic operating principle of ionization-rate ratio control through band discontinuity of the super-lattice construction; in face, an APD formed on a silicon (Si) substrate is commercially available already.
  • the APD formed on a silicon (Si) substrate however, has no sensitivity in the 1.55- ⁇ m band and 1.3- ⁇ m band for use in signal transfer by use of an optical fiber.
  • InGaAs(P)/InAlAs-based and In(Al)GaAs/InAlAs-based materials are lattice-matched on an InP substrate.
  • This APD has proved to be of a high gain-bandwidth product and a high sensitivity in these signal transfer bands.
  • the APD is to be air-tight encapsulated in a package, employing such a packaging scheme that, for example, a whole device is put in a case and then encapsulated air-tight in order to prevent as much as possible a water content from entering the package.
  • This packaging stands a bottleneck in manufacturing the APD at a low cost.
  • the construction of encapsulating the device as contained in a case for air-tightness is a hindrance in cost reduction.
  • the mesa-type construction suffers from especially a difficulty in control of an interfacial level of the mesa-etching portion, thus deteriorating the dark current.
  • a passivation film must be formed indispensably but prevents an optimal construction from being obtained.
  • a PinPD is generally formed on a compound semiconductor substrate specifically by a vapor-phase or liquid-phase growing method in manufacture, so that it is stable and has by far good reliabilities as compared to the APD. However, it does not have a super-lattice multiplication layer and so has no carrier multiplication action, thus suffering from a problem of a small margin in specifications for obtaining higher performance.
  • the invention employs a PinPD stable in characteristic and reliability although its potential characteristics are inferior to an PAD because it has no carrier multiplication action, thus realizing a photo-semiconductor module further improved in characteristic and reliability.
  • the protruding electrode 3 is formed on the input/output terminal electrode 2 of the light-receiving photo-semiconductor device A.
  • the conductive adhesive agent 4 is formed to a constant thickness in position in a container C and then a tip of the protruding electrode 3 is dipped in this conductive adhesive agent 4, thus transferring the conductive adhesive agent 4 to the protruding electrode 3.
  • the input/output terminal electrode 2 is connected and fixed to the connection electrode 6 via the conductive adhesive agent 4, thus mounting the light-receiving photo-semiconductor device A to the circuit board 7.
  • the surroundings of a connection at the opposing portion between the circuit board 7 and the compound semiconductor substrate B are encapsulated and reinforced with the encapsulating resin 5.
  • the encapsulating resin 5 needs only to reinforce the surroundings of the connection.
  • the optical fiber 8 is positioned on a photo-absorbing layer of the light-receiving photo-semiconductor device A (specifically the PinPD1) in such a manner as to maximize the photo-absorbing efficiency for the PinPD1 and then is adhered and fixed to the back face A 2 of the light-receiving photo-semiconductor device A using the adhesive agent 9 such as a thermo-hardening resin.
  • the adhesive agent 9 such as a thermo-hardening resin.
  • the optical fiber 8 can thus be fixed along the back face A 2 of the light-receiving photo-semiconductor device A as follows. That is, the optical fiber 8 can be slid on the back face A 2 of the light-receiving photo-semiconductor device A in positioning to thereby be fixed at such a position that the light-receiving photo-semiconductor device A has a maximum light receiving sensitivity.
  • the photo-semiconductor module can be manufactured with a good characteristic as held for the light-receiving photo-semiconductor device A.
  • the optical fiber 8 can thus be positioned easily, thereby reducing the manufacturing costs that much.
  • the back face A 2 of the light-receiving photo-semiconductor device A is mirror-face finished often and so has good flatness preserved. This further improves the accuracy of and facilitates the positioning of the optical fiber 8.
  • FIGS. 4 and 5 show the data obtained as a result of measuring the placing of the optical fiber 8 at such a position as to maximize a light receiving sensitivity of the light-receiving photo-semiconductor device A which was measured as sliding the optical fiber 8 on the back face A 2 .
  • FIG. 4 is a perspective view for showing a state where the optical fiber 8 was slid on the back face A 2 of the light-receiving photo-semiconductor device A and FIG. 5, a graph in which the changes observed in this measurement of the light receiving sensitivity are superposed one on another.
  • FIG. 4 is a perspective view for showing a state where the optical fiber 8 was slid on the back face A 2 of the light-receiving photo-semiconductor device A and FIG. 5, a graph in which the changes observed in this measurement of the light receiving sensitivity are superposed one on another.
  • the light is converted into an electric current most and so the current flows most at such a position that the sensitivity hits the peak.
  • the light receiving sensitivity hits the peak at a position where the optical fiber moved 270 ⁇ m along the X-axis and 210 ⁇ m along the Y-axis.
  • the optical fiber 8 can be moved near such a place on the back face A 2 that the photo-absorbing layer is suspected to be present while measuring the value of a resultant photo-electric current, thus efficiently determining the point where the light receiving sensitivity becomes maximum.
  • the present invention is not limited to use of such an adhesive agent.
  • the second embodiment uses solder 10 in place of the conductive adhesive agent 4 to thereby connect and fix the input/output terminal electrode 2 of the light-receiving photo-semiconductor device A to the connection electrode 6 of the circuit board 7.
  • the device is mounted using only the solder 10 without providing the protrusion electrode 3.
  • the other construction details are basically the same as those of the first embodiment and so their explanation is omitted.
  • the encapsulating resin 5 need not be used for reinforcement if the reliability can be preserved for thermal distortion to which are related the size of the light-receiving photo-semiconductor device A and the material of the compound semiconductor substrate B.
  • the solder 10 contains at least one of Sn, Ag, Pb, Bi, Cu, Zn, and Sb.
  • the solder 10 is supplied by printing to the connection electrode 6 of the circuit board 7. Specifically, the solder 10 is supplied through a screen mask 11 using a squeegee 12 to the surface of the connection electrode 6.
  • the input/output terminal electrode 2 is aligned with the connection electrode 6 to then mount the light-receiving photo-semiconductor device A on the circuit board 7 and, in this state, conduct reflow processing, etc. to thereby melt the solder 10, thus connecting the input/output terminal electrode 2 to the connection electrode 6.
  • the encapsulating resin 5 is used to encapsulate the connection for reinforcement.
  • the encapsulating resin 5 needs only to reinforce at least the surroundings of the connection.
  • the encapsulating resin 5 need not be used for reinforcement if the reliability can be preserved for the thermal distortion to which are related the size of the light-receiving photo-semiconductor device A, the materials of the compound semiconductor substrate B and the circuit board 7, etc.
  • the optical fiber 8 is positioned on the back face A 2 of the light-receiving photo-semiconductor device A so that the photo-absorbing layer of the light-receiving photo-semiconductor device A may have the maximum photo-absorbing efficiency and then adhered to the light-receiving photo-semiconductor device A using the adhesive agent 9.
  • the solder 10 is formed by plating on the connection electrode 6 of the circuit board 7. Then, as shown in FIG. 8B, the input/output terminal electrode 2 of the light-receiving photo-semiconductor device A is connected and fixed to the connection electrode 6 of the circuit board 7 using both heat and load. In this step, the solder 10 has its surface oxide film broken by the heat and load to thereby produce a metallic compound between itself and the input/output terminal electrode 2. This process serves to interconnect the input/output terminal electrode 2 and the connection electrode 6 both mechanically and electrically.
  • the connection between the light-receiving photo-semiconductor device A and the circuit board 7 is encapsulated and reinforced by the encapsulating resin 5.
  • the encapsulating resin 5 needs only to reinforce the surroundings of the connection. Also, the encapsulating resin 5 need not be used for reinforcement if the reliability can be preserved for thermal distortion to which are related the size of the light-receiving photo-semiconductor device A and the material of the compound semiconductor substrate B and the circuit board 7.
  • the optical fiber 8 is positioned on the back face A 2 of the light-receiving photo-semiconductor device A so that the photo-absorbing layer of the light-receiving photo-semiconductor device A may have the maximum photo-absorbing efficiency and then is adhered to the light-receiving photo-semiconductor device A using the adhesive agent 9.
  • the encapsulating resin 5 may be supplied only to the periphery of the light-receiving photo-semiconductor device A as shown in FIG. 9.
  • the light-receiving photo-semiconductor device A is mounted to the circuit board 7 according to the method shown in FIGS. 10A and 10B same as that described with reference to FIGS. 7A and 7B.
  • the encapsulating resin 5 made of a photo-hardening resin e.g., ultraviolet-hardening resin
  • the encapsulating resin 5 is placed as unhardened at the periphery of the light-receiving photo-semiconductor device A at the connection between the light-receiving photo-semiconductor device A and the circuit board 7.
  • the optical fiber 8 is further abutted to and placed on the back face A 2 of the light-receiving photo-semiconductor device A via the adhesive agent 9 made of a similar photo-hardening resin (as unhardened).
  • an ultraviolet ray is applied to the encapsulating resin 5 and the adhesive agent 9 simultaneously to thereby harden only the surfaces of the encapsulating resin 5 and the adhesive agent 9.
  • the optical fiber 8 can be properly positioned while simultaneously preventing the encapsulating resin 5 from flowing into the connection.
  • the encapsulating resin 5 and the adhesive agent 9 are heated to be hardened permanently.
  • the present invention is not limited to use of such an adhesive medium.
  • the protruding electrode 3 is formed on the input/output terminal electrode 2 to then connect and fix the input/output terminal electrode 2 of the light-receiving photo-semiconductor device A to the connection electrode 6 of the circuit board 7 by interposing the solder 10 between the protruding electrode 3 and the connection electrode 6.
  • the solder 10 is specifically formed as pasted on the connection electrode 6 of the circuit board 7 and then melted by reflow processing to thereby connect and fix the connection electrode 6 and the input/output terminal electrode 2 to each other.
  • the solder 10 may be formed to the connection electrode 6 without supplying flux to then has oxide film of the solder 10 broken using heat and load simultaneously in order to produce a metallic compound between the solder 10 and the protruding electrode 3, thus connecting and fixing the connection electrode 6 and the input/output terminal electrode 2 to each other.
  • the encapsulating resin 5 need not be used for reinforcement if the reliability can be preserved for thermal distortion to which are related the size of the light-receiving photo-semiconductor device A and the material of the compound semiconductor substrate B.
  • the solder 10 contains at least one of Sn, Ag, Pb, Bi, Cu, Zn, and Sb.
  • first through third embodiments of the present invention have their respective features in the construction for interconnecting the light-receiving photo-semiconductor device A and the circuit board 7.
  • fourth through sixth embodiments of the present invention which have their respective features in the optical fiber 8 installing construction and seventh and eighth embodiments of the present invention which further have the other features.
  • connection 14 contains a construction for connection by use of the conductive adhesive agent 4 or the solder 10.
  • FIG. 12 outlines the photo-semiconductor module according to the fourth embodiment.
  • the light-receiving photo-semiconductor device A is mounted via the connection 14 to the circuit board A, the back face A 2 of which has a mounting hole 13 formed therein.
  • the mounting hole 13 is formed as bottomed along the thickness direction of the substrate B toward the mounting face A 1 (on which the terminal electrode is formed) and to such a size that the optical fiber 8 can be inserted therein.
  • the tip of the optical fiber 8 is fixed, as inserted in the mounting hole 13, to the light-receiving photo-semiconductor device A using the adhesive agent 9.
  • This configuration permits the tip of the optical fiber 8 to come close to the photo-absorbing layer of the PinPD1 as much as possible, thus preserving a sufficient level of light receiving sensitivity.
  • FIG. 13 outlines the photo-semiconductor module according to the fifth embodiment of the present invention.
  • the light-receiving photo-semiconductor device A is mounted via the connection 14 to the circuit board A, to the back face A 2 of which is fixed face-to-face an auxiliary mounting plate 16.
  • the auxiliary mounting plate 16 has a mounting hole 17 formed along its thickness direction. The mounting hole 17 is specifically formed through the auxiliary mounting plate 16 and to such a size that the optical fiber 8 can be inserted therein.
  • the tip of the optical fiber 8 is fixed, as inserted in the mounting hole 17, to the auxiliary mounting plate 16 using the adhesive agent 9, to thereby fix the optical fiber 8 via the auxiliary mounting plate 16 to the light-receiving photo-semiconductor device A.
  • This configuration permits the auxiliary mounting plate 16 to enhance the mechanical strength of the light-receiving photo-semiconductor device A (compound semiconductor substrate B), thus making the thickness of the light-receiving photo-semiconductor device A (compound semiconductor substrate B) thin that much.
  • the thickness of the light-receiving photo-semiconductor device A can be thus decreased to thereby permit the tip of the optical fiber 8 to come close to the photo-absorbing layer of the PinPD1 by that much, thus preserving a sufficient level of the light receiving sensitivity.
  • the size of the mounting hole 17 may mostly match the profile of the optical fiber 8 to thereby fix the optical fiber 8 by pressure into the mounting hole 17.
  • auxiliary mounting plate 16 of this embodiment can be installed and fixed using the encapsulating resin 5 to thereby eliminate the independent step of installing the auxiliary mounting plate 16 in order to simplify the manufacturing process, thus reducing the costs.
  • FIG. 15 outlines the photo-semiconductor module according to the sixth embodiment of the present invention.
  • the light-receiving photo-semiconductor device A is mounted via the connection 14 to the circuit board 7, in which in turn is formed a mounting hole 18.
  • the mounting hole 18 is formed through the circuit board 7 along the thickness direction of the circuit board 7 and to such a size that the optical fiber 8 can be inserted therein.
  • the tip of the optical fiber 8 is fixed, as inserted in the mounting hole 13, to the light-receiving photo-semiconductor device A on its mounting face A 1 (on the face on which the input/output terminal electrode is formed) using the adhesive agent 5.
  • This configuration permits the tip of the optical fiber 8 to come close to the photo-absorbing layer of the PinPD1 as much as possible, thus preserving a sufficient level of light receiving sensitivity.
  • a positioning block 19 may be disposed so as to surround the mounting hole 18. This configuration facilitates the positioning of the optical fiber 8.
  • the positioning block 19 may be a resist, a chip element, or any other as far as it does not interfere with the wiring circuit on the circuit board 7.
  • the optical fiber 8 is fixed with the adhesive agent 9 and the encapsulating resin 5 is provided only at the periphery of the light-receiving photo-semiconductor device A. This is, however, just one example and, of course, the surroundings of the connection 14 may be encapsulated completely with the encapsulating resin 5 or the optical fiber 8 may be fixed by pressure into the mounting hole 18.
  • FIGS. 17 outline the photo-semiconductor module according to the seventh embodiment of the present invention.
  • FIG. 17A shows a wiring electrode 20 of the light-receiving photo-semiconductor device A as viewed from the above and
  • FIG. 17B is a cross-sectional view for showing the light-receiving photo-semiconductor device A as mounted to the circuit board 7.
  • the light-receiving photo-semiconductor device A may sometimes have such a configuration that the underlying compound semiconductor substrate B as a whole acts as the N-side electrode, so that if the connection 14 extended from the P-side electrode is present at the center of the light-receiving photo-semiconductor device A, a floating capacitance may possibly occur there between the connection electrode 6 of the circuit board 7 pulled around thereto and the compound semiconductor substrate B underlying the light-receiving photo-semiconductor device A which acts as the N-side electrode. Such a floating capacitance may deteriorate the high-frequency characteristic remarkably. To solve this problem, in this embodiment, as shown in FIG.
  • connection electrode 6 of the circuit board 7 connected to the connection 14 which acts as the P-side electrode is disposed outside the light-receiving photo-semiconductor device A as much as possible in design.
  • This configuration makes it possible to prevent characteristics from being deteriorated due to the occurrence of the floating capacitance, thus realizing the photo-semiconductor module excellent in high-frequency characteristic.
  • the compound semiconductor substrate B has a cleavage face and so is brittle and fragile as compared to a silicon (Si) substrate. Therefore, when the protruding electrode 3 needs to be provided in any of the embodiments of the present invention, an attempt to form the protruding electrode 3 using the wire bonding method may sometimes cause damage on the compound semiconductor substrate B. In such a case, as shown in FIG.
  • the side of the shorter-side Ba of the compound semiconductor substrate B can be sandwiched by a jig 21 to then form the protruding electrode 3 by wire bonding to thereby remarkably mitigate damage (cracks etc.) on the compound semiconductor substrate B, thus further preventing the deterioration in the high-frequency characteristic and the current characteristic (dark current, photo-electric current, etc.) of the light-receiving photo-semiconductor device.
  • a reference numeral 19 in FIG. 18 indicates a bonding stage.
  • the invention provides a flip-chip mounting construction in packaging to thereby air-tight encapsulation by use of an encapsulating resin, thus eliminating the necessity of otherwise encapsulating in an air-tight manner by use of a package construction.
  • This technology is not established yet conventionally.
  • This new technology enables reducing the costs.
  • a photo-semiconductor module can be realized which is excellent in the high-frequency characteristic, the current characteristic (dark current, photo-electric current, etc.) and reliability.
  • the light-receiving photo-semiconductor device of the invention can be manufactured in such stable processes as the vapor-phase growing method or liquid-phase growing method to thereby be free of characteristic deterioration due to humidity in contrast to a prior art one, thus providing a further stabled mounting construction.

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EP02001344A 2001-01-19 2002-01-18 Module semiconducteur photonique et son procédé de fabrication Withdrawn EP1225641A3 (fr)

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Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6974765B2 (en) * 2001-09-27 2005-12-13 Intel Corporation Encapsulation of pin solder for maintaining accuracy in pin position
US7123798B2 (en) * 2002-03-29 2006-10-17 Ngk Insulators, Ltd. Optical device and method of producing the same
US20040013432A1 (en) * 2002-07-16 2004-01-22 Tanay Karnik Direct backside optical fiber attachment to microprocessor chips
US6998721B2 (en) * 2002-11-08 2006-02-14 Stmicroelectronics, Inc. Stacking and encapsulation of multiple interconnected integrated circuits
US6974973B2 (en) * 2002-11-08 2005-12-13 Micron Technology, Inc. Apparatus for determining temperature of an active pixel imager and correcting temperature induced variations in an imager
US7321703B2 (en) * 2002-12-20 2008-01-22 Ngk Insulators, Ltd. Optical device
US7195402B2 (en) * 2002-12-20 2007-03-27 Ngk Insulators, Ltd. Optical device
US7308174B2 (en) 2002-12-20 2007-12-11 Ngk Insulators, Ltd. Optical device including a filter member for dividing a portion of signal light
US7023023B2 (en) * 2003-04-30 2006-04-04 Intel Corporation Optical interconnects in integrated circuits
WO2004109354A1 (fr) * 2003-06-02 2004-12-16 Ngk Insulators, Ltd. Dispositif optique
US20050121806A1 (en) * 2003-12-04 2005-06-09 White Electronic Designs Corporation Method for attaching circuit elements
US7005719B2 (en) * 2004-02-27 2006-02-28 Texas Instruments Incorporated Integrated circuit structure having a flip-chip mounted photoreceiver
JP4627632B2 (ja) * 2004-05-17 2011-02-09 Ｏｋｉセミコンダクタ株式会社 半導体装置
US7534535B2 (en) * 2004-11-23 2009-05-19 Xerox Corporation Photoreceptor member
US7364943B2 (en) * 2005-05-18 2008-04-29 Intel Corporation Method of bonding a microelectronic die to a substrate and arrangement to carry out method
JP4184371B2 (ja) * 2005-10-03 2008-11-19 日本テキサス・インスツルメンツ株式会社 半導体チップ、半導体装置およびそれらの製造方法
US20080169574A1 (en) * 2007-01-12 2008-07-17 Nokia Corporation Direct Die Attachment
US7783141B2 (en) * 2007-04-04 2010-08-24 Ibiden Co., Ltd. Substrate for mounting IC chip and device for optical communication
CN102105971B (zh) * 2009-04-24 2013-05-22 松下电器产业株式会社 半导体封装元器件的安装方法和安装结构体
WO2014043089A1 (fr) * 2012-09-11 2014-03-20 Quantum Electro Opto Systems Sdn. Bhd. Procédé et appareil pour couplage optique et conversion optoélectronique
US9651746B2 (en) * 2013-03-27 2017-05-16 Ccs Technology, Inc. Optoelectronic device and method for assembling an optoelectronic device
TW201505387A (zh) 2013-05-30 2015-02-01 量子電鍍光學系統有限公司 光接收器之方法及裝置
JP6124032B2 (ja) * 2015-08-04 2017-05-10 パナソニックＩｐマネジメント株式会社 実装構造体と実装構造体の製造方法
US9755100B2 (en) * 2016-01-29 2017-09-05 International Business Machines Corporation Reducing dark current in germanium photodiodes by electrical over-stress

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0537004A (ja) * 1991-07-25 1993-02-12 Sumitomo Electric Ind Ltd 受光素子
US5247597A (en) * 1992-03-25 1993-09-21 International Business Machines Corporation Optical fiber alignment
US5434939A (en) * 1993-02-09 1995-07-18 Matsushita Electric Industrial Co., Ltd. Optical fiber module with surface emitting laser
US5641996A (en) * 1995-01-30 1997-06-24 Matsushita Electric Industrial Co., Ltd. Semiconductor unit package, semiconductor unit packaging method, and encapsulant for use in semiconductor unit packaging
JP2000009968A (ja) * 1998-06-19 2000-01-14 Matsushita Electric Ind Co Ltd 受光モジュール
JP2000321469A (ja) * 1999-05-12 2000-11-24 Matsushita Electric Ind Co Ltd 光結合装置とその製造方法および光ファイバモジュール
EP1137075A2 (fr) * 2000-03-24 2001-09-26 Matsushita Electric Industrial Co., Ltd. Empaquetage d'un dispositif semiconducteur et dispositif à communication optique

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590344A (en) * 1969-06-20 1971-06-29 Westinghouse Electric Corp Light activated semiconductor controlled rectifier
US4136357A (en) * 1977-10-03 1979-01-23 National Semiconductor Corporation Integrated circuit package with optical input coupler
US4307934A (en) * 1978-05-08 1981-12-29 General Dynamics, Pomona Division Packaged fiber optic modules
US4368481A (en) * 1979-06-19 1983-01-11 Tokyo Shibaura Denki Kabushiki Kaisha Light-driven semiconductor device
US4355321A (en) * 1981-02-02 1982-10-19 Varian Associates, Inc. Optoelectronic assembly including light transmissive single crystal semiconductor window
JPH0786693A (ja) 1993-09-16 1995-03-31 Toshiba Corp 光半導体モジュール
JP3484543B2 (ja) * 1993-03-24 2004-01-06 富士通株式会社 光結合部材の製造方法及び光装置
US6320257B1 (en) * 1994-09-27 2001-11-20 Foster-Miller, Inc. Chip packaging technique
JPH08111559A (ja) 1994-10-07 1996-04-30 Hitachi Ltd 半導体発受光素子及び装置
US5625733A (en) * 1995-02-09 1997-04-29 Lucent Technologies Inc. Arrangement for interconnecting an optical fiber to an optical component
GB2316225A (en) * 1996-08-06 1998-02-18 Northern Telecom Ltd Semiconductor photodetector packaging
US5977567A (en) * 1998-01-06 1999-11-02 Lightlogic, Inc. Optoelectronic assembly and method of making the same
US6380563B2 (en) * 1998-03-30 2002-04-30 Micron Technology, Inc. Opto-electric mounting apparatus
FR2779536B1 (fr) * 1998-06-09 2001-10-19 Commissariat Energie Atomique Assemblage permettant la connexion de fibres optiques avec des composants optiques ou optoelectroniques et procede de fabrication de cet assemblage
JP3230506B2 (ja) * 1998-12-28 2001-11-19 日本電気株式会社 受光モジュール
US6207950B1 (en) * 1999-01-11 2001-03-27 Lightlogic, Inc. Optical electronic assembly having a flexure for maintaining alignment between optical elements
JP3459787B2 (ja) * 1999-04-02 2003-10-27 Ｎｅｃ化合物デバイス株式会社 光半導体モジュール及びその製造方法
JP2001059923A (ja) * 1999-06-16 2001-03-06 Seiko Epson Corp 光モジュール及びその製造方法、半導体装置並びに光伝達装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0537004A (ja) * 1991-07-25 1993-02-12 Sumitomo Electric Ind Ltd 受光素子
US5247597A (en) * 1992-03-25 1993-09-21 International Business Machines Corporation Optical fiber alignment
US5434939A (en) * 1993-02-09 1995-07-18 Matsushita Electric Industrial Co., Ltd. Optical fiber module with surface emitting laser
US5641996A (en) * 1995-01-30 1997-06-24 Matsushita Electric Industrial Co., Ltd. Semiconductor unit package, semiconductor unit packaging method, and encapsulant for use in semiconductor unit packaging
JP2000009968A (ja) * 1998-06-19 2000-01-14 Matsushita Electric Ind Co Ltd 受光モジュール
JP2000321469A (ja) * 1999-05-12 2000-11-24 Matsushita Electric Ind Co Ltd 光結合装置とその製造方法および光ファイバモジュール
EP1137075A2 (fr) * 2000-03-24 2001-09-26 Matsushita Electric Industrial Co., Ltd. Empaquetage d'un dispositif semiconducteur et dispositif à communication optique

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EP1225641A3 (fr) 2007-01-24
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TW527676B (en) 2003-04-11
US20020098609A1 (en) 2002-07-25
US6890789B2 (en) 2005-05-10

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