EP1197993A1 - Apparatus for manufacturing semiconductor device - Google Patents

Apparatus for manufacturing semiconductor device Download PDF

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Publication number
EP1197993A1
EP1197993A1 EP00929881A EP00929881A EP1197993A1 EP 1197993 A1 EP1197993 A1 EP 1197993A1 EP 00929881 A EP00929881 A EP 00929881A EP 00929881 A EP00929881 A EP 00929881A EP 1197993 A1 EP1197993 A1 EP 1197993A1
Authority
EP
European Patent Office
Prior art keywords
door body
annular groove
door
side face
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00929881A
Other languages
German (de)
English (en)
French (fr)
Inventor
Kazuyoshi Applied Materials Japan Inc. SAITO
Youji Applied Materials Japan Inc. TAKAGI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP1197993A1 publication Critical patent/EP1197993A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
    • F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber

Definitions

  • the present invention relates to a semiconductor manufacturing device such as an epitaxial growth device.
  • epitaxial growth devices etc in which a feed chamber having a wafer feed path is linked to a processing chamber having a wafer introduction port for introduction of a semiconductor wafer constituting an article to be processed.
  • a wafer guide member (a guide section for the article to be processed) having a passage linked with the wafer introduction port.
  • this prior art device comprises an opening/closure mechanism that opens/closes the passage of this wafer guide member.
  • the opening/closure mechanism comprises for example a door and a cylinder provided with a piston rod capable of extension/retraction, linked to this door.
  • the door comprises a door body performed with an annular groove that opens in the face on the side facing the aperture of the wafer guide member. Also, an annular sealing member constituted by an O-ring is accommodated in the annular groove.
  • the passage is blocked by closing the door by extending the piston rod of the cylinder to move the door towards the face of the aperture of the wafer guide member until the O-ring contacts the aperture face of the wafer guide member.
  • the present inventors discovered the following problems thereof. Specifically, if the door body is tilted with respect of the aperture face of the wafer guide member, it is possible, when the door is closed, for the outside portion from the aperture of the annular groove in the door body to come into contact with the wafer guide member.
  • an object of the present invention is to provide a semiconductor manufacturing device wherein contact of the door body and guide section of the article to be processed can be satisfactorily prevented when the door that performs opening/closure of the passage for introduction of the article to be processed into the chamber is opened/closed.
  • a semiconductor manufacturing device comprises a processing chamber, a guide section for an article to be processed having a passage for introduction of the article to be processed into this processing chamber and an opening/closure mechanism having a door whereby this passage is opened/closed wherein this door comprises: a door body having an annular groove opening in a face facing the open end of the passage and formed with a chamfered section on the outside of an outer peripheral section where the aperture of this annular groove is formed; and a sealing member that forms an annular shape and is accommodated in the annular groove.
  • a semiconductor manufacturing device comprises a processing chamber, a guide section for an article to be processed having a passage for introduction of the article to be processed into this processing chamber and an opening/closure mechanism having a door whereby this passage is opened/closed wherein this door comprises: a door body having an annular groove opening in a face on the side facing the aperture of the passage and an annular sealing member accommodated in the annular groove, formed with a chamfered section in a portion on the outside of an outer peripheral section where the aperture of this annular groove is formed in the door body.
  • the annular groove is formed from the bottom face, inside side face and outside side face
  • the inside side face has a region extending towards the inside of the door body and with slantwise respect to the side face of this door body from the inside peripheral section formed with the aperture of the annular groove
  • the outside side face comprises a first region extending from the outside peripheral section where the annular groove aperture is formed towards the outside of the door body and slantwise with respect to the side face of this door body and a second region extending substantially parallel with the side face of the door body from this first region.
  • the annular groove is formed at the bottom face, inside side face and outside side face
  • the inside side face has a region extending slantwise towards the inside of the door body and with respect to the side face of this door body from the inside peripheral section formed with the aperture of the annular groove
  • the outside side face comprises a first region extending from the outside peripheral section where the annular groove aperture is formed towards the outside of the door body and slantwise with respect to the side face of this door body and a second region extending substantially parallel with the side face of the door body from this first region.
  • annular sealing member can be prevented from coming out of the annular groove.
  • annular groove can be formed of comparatively large dimensions having a desired thickness between this and the side face of the door body.
  • a sealing member of comparatively large (thick) cord diameter can therefore be employed. In this way, a large clearance can be achieved between the door body when the door is closed and the wafer guide member constituting the guide section for the article to be processed. As a result, contact between the door body and the guide section for the article to be processed during opening/closure of the door can be more effectively prevented.
  • FIG. 1 is a diagrammatic cross-sectional view illustrating the construction of a preferred embodiment of a semiconductor manufacturing device according to the present invention.
  • the semiconductor manufacturing device constituted by epitaxial growth device 1 is a single wafer type device in which deposition treatment of an article to be treated consisting of one silicon wafer is performed at a time.
  • This epitaxial growth device 1 comprises processing chamber 2 having disc-shaped susceptor 3 arranged therein, on the upper surface of which a wafer W is placed.
  • Susceptor 3 is horizontally supported at three points from its back face by support shaft 4.
  • wafer introduction port 5 is formed for introducing wafer W from the side into processing chamber 2.
  • the aperture width of this wafer introduction port 5 is made larger than the external diameter of wafer W. That is, wafer introduction port 5 is formed of rectangular shape in perpendicular cross section (vertical cross-section) extending in the horizontal direction (transverse direction i.e. direction orthogonal to the plane of the drawing in Figure 1) such that disc-shaped wafer W can pass therethrough.
  • sidewardly extending feed chamber 6 formed with wafer W feed path is connected to the side wall of processing chamber 2. Wafer W is fed in the direction of arrow A shown in the drawing through feed chamber 6 by a feed robot, not shown.
  • wafer guide member 8 (a guide section for the article to be processed) made of metal having passage 7 that communicates with wafer introduction port 5.
  • This wafer guide member 8 projects sideways from the side wall of processing chamber 2.
  • aperture face 8a (an open end face on the opposite side to the side of processing chamber 2) at the tip of wafer guide member 8 is inclined with respect to the feed direction A of wafer W.
  • joining projection 8b is provided at the base end (the end on the side of processing chamber 2) of wafer guide member 8.
  • Wafer guide member 8 is fixed to the side wall of processing chamber 2 in a condition with this joining projection 8b inserted into recess 6a formed at the end on the side of processing chamber 2 on feed chamber 6.
  • passage 7 is formed in a rectangular shape extending in the horizontal direction (transverse direction i.e. direction orthogonal to the plane of the drawing in Figure 1) in perpendicular cross-section (vertical cross-section), corresponding to wafer introduction port 5, such that disc-shaped wafer W can pass therethrough. That is, wafer introduction port 5 and passage 7 have substantially identical cross-sectional shape.
  • Opening/closure mechanism 9 comprises door 10 and cylinder 11 that drives this door 10.
  • Figure 2 is an enlarged cross-sectional view (part omitted) illustrating wafer guide member 8 and opening/closure mechanism 9;
  • Figure 3 is a perspective view illustrating door 10 of opening/closure mechanism 9.
  • door 10 has door body 12 made of metal of rectangular shape, its external dimensions being larger than the aperture section of wafer guide member 8 and smaller than the external dimensions of aperture face 8a. Also, in the vicinity of the periphery of door body 12, there is formed annular groove 13 opening in face 12a on the side opposite the open end of wafer guide member 8 i.e. aperture face 8a. Furthermore, O-ring 14 constituting an annular sealing member is accommodated in this annular groove 13.
  • FIG 4 is a cross-sectional view illustrating annular groove 13 formed in door body 12 in Figure 2.
  • annular groove 13 is formed (defined) by bottom face 13a, outside side face 13b and inside side face 13c.
  • Outside side face 13b comprises first region Fo extending continuously from outside peripheral section 13f forming the aperture of annular groove 13 towards bottom face 13a and second region So.
  • First region Fo in this outside side face 13b extends from outside peripheral section 13f towards the outside of door body 12 (towards side face 12b of door body 12) and extends slantwise with respect to this side face 12b. Also, second region So in outside side face 13b extends substantially parallel with side face 12b from this first region Fo towards bottom face 13a.
  • Inside side face 13c comprises first region Fi and second region Si extending continuously from inside peripheral section 13g forming the aperture of annular groove 13 towards bottom face 13a.
  • First region Fi in this inside side face 13c extends from inside peripheral section 13g towards the inside of door body 12 (towards the middle of door body 12) and slantwise with the respect to side face 12b of door body 12. Also, second region Si in outside side face 13b extends from this first region Fi in substantially parallel fashion to side face 12b from bottom face 13a.
  • the depth of annular groove 13 is made to be of a dimension (see Figure 2) such that a part of O-ring 14 extends (protrudes) from annular groove 13 when O-ring 14 is accommodated in this annular groove 13. In this way, detachment of O-ring 14 from annular groove 13 is even more effectively prevented.
  • outside side face 13b and inside side face 13c in this way by respectively first region Fo and second region So, and first region Fi and second region Si, it is made difficult for O-ring 14 to become detached even if the external dimensions of door body 12 are small; thus, annular groove 13 of comparatively large dimensions can be formed whereby a sufficient thickness (width) can be achieved such that there is no possibility of impairing the strength of the peripheral section of door body 12. Reduction in size of opening/closure mechanism 9 can thereby be achieved.
  • O-ring 14 of comparatively large (thick) cord diameter can be employed. If such O-ring 14 of large cord diameter is mounted in door body 12, the portion extending from aperture face 12a of door body 12 in O-ring 14 becomes long. In this way, in a condition in which passage 7 of wafer guide member 8 is blocked by closing door 10 as shown in Figure 2, the clearance of aperture face 12a of door body 12 and aperture face 8a of wafer guide member 8 can be increased.
  • O-ring 14 accommodated in annular groove 13 is crushed by adhering to (contacting) aperture face 8a of wafer guide member 8. Also, outside side face 13b and inside side face 13c described above are formed such that the crushed portion in O-ring 14 cannot contact second regions So, Si.
  • first region Fi of inside side face 13c may be made of a shape extending towards the inside of door body 12 slantwise with respect to side face 12b of door body 12 from inside peripheral section 13g forming the aperture of annular groove 13 as far as bottom face 13a.
  • chamfered section 15 is formed on the entire outside portion at aperture face 12a of door body 12, from outside peripheral section 13f forming the aperture of annular groove 13.
  • This chamfered section 15 is formed for example such that the chamfer lengths (cutaway lengths) of portion of aperture face 12a and portion of side face 12b are substantially equal.
  • a thickness such that the strength of the peripheral section of door body 12 cannot be impaired is guaranteed between outside side face 13b of annular groove 13 and chamfered section 15.
  • cylinder 11 that operates door 10 comprises cylinder tube 11a mounted in feed chamber 6 and piston rod 11b connected with door body 12.
  • cylinder 11a mounted in feed chamber 6
  • piston rod 11b connected with door body 12.
  • an air cylinder may be employed as this cylinder 11.
  • Piston rod 11b is extensible in the direction of arrow B as shown in Figure 1 with respect to cylinder tube 11a, so as to displace door body 12 between aperture face 8a of wafer guide member 8 and cylinder tube 11a. Also, cylinder tube 11a is arranged in a tilted condition with respect to feed chamber 6 such that aperture face 12a of door body 12 faces aperture face 8a of wafer guide member 8.
  • Recess 6b to accommodate door 10 when retracted is provided in a location at the bottom of feed chamber 6 facing aperture face 8a of wafer guide member 8.
  • door 10 can be retracted downwards into a position such that wafer W can be introduced into passage 7 of wafer guide member 8 when door 10 is opened. In this way, wafer W can be introduced into processing chamber 2 in a smooth fashion without any interference between door 10 and wafer W.
  • an outside side face and an inside side face are not restricted to outside side face 13b and inside side face 13c but could be for example of a shape extending so as to spread over the whole thereof, from the aperture (aperture edge) of annular groove 13 to a bottom face.
  • outside side face 13b and inside side face 13c of annular groove 13 were formed by first regions Fo, Fi extending so as to spread from the aperture (aperture edge) of annular groove 13 and second regions So, Si extending substantially parallel with side face 12b from these first regions Fo, Fi, there is no particular restriction to this.
  • the present invention can be suitably applied to semiconductor manufacturing devices other than epitaxial growth device 1, such as for example CVD devices or dry etching devices, in which an article to be processed is introduced into a processing chamber.
  • a door body can be prevented from coming into contact with the guide section of an article to be processed during opening/closure of the door. Consequently, inflow of metallic dust generated by contact of the door body with the guide section of the article to be processed into a processing chamber can be satisfactorily prevented or suppressed. In this way, metallic contamination of the article to be processed can be reduced.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
EP00929881A 1999-05-27 2000-05-26 Apparatus for manufacturing semiconductor device Withdrawn EP1197993A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11148134A JP2000349031A (ja) 1999-05-27 1999-05-27 半導体製造装置
JP14813499 1999-05-27
PCT/JP2000/003409 WO2000074124A1 (fr) 1999-05-27 2000-05-26 Appareil de fabrication d'un dispositif a semi-conducteurs

Publications (1)

Publication Number Publication Date
EP1197993A1 true EP1197993A1 (en) 2002-04-17

Family

ID=15446037

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00929881A Withdrawn EP1197993A1 (en) 1999-05-27 2000-05-26 Apparatus for manufacturing semiconductor device

Country Status (5)

Country Link
EP (1) EP1197993A1 (zh)
JP (1) JP2000349031A (zh)
KR (1) KR20020010613A (zh)
TW (1) TW445505B (zh)
WO (1) WO2000074124A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4348542B2 (ja) * 2004-08-24 2009-10-21 信越半導体株式会社 石英治具及び半導体製造装置
KR100940300B1 (ko) * 2006-04-07 2010-02-05 주식회사 에이디피엔지니어링 평판표시소자 제조장치
KR101043774B1 (ko) * 2008-12-19 2011-06-22 세메스 주식회사 반도체 제조용 공정 챔버
JP5461225B2 (ja) * 2010-02-24 2014-04-02 株式会社アルバック 搬送装置
KR101201361B1 (ko) * 2010-09-15 2012-11-14 에이피시스템 주식회사 웹 처리 장치
CN104934353B (zh) * 2014-03-18 2018-01-19 北京北方华创微电子装备有限公司 传输系统、反应腔室及半导体加工设备
DE102021102283A1 (de) * 2021-02-01 2022-08-04 Vat Holding Ag Verschlussvorrichtung zum vakuumdichten Verschließen einer Öffnung in einer Wand
DE102021102284A1 (de) * 2021-02-01 2022-08-04 Vat Holding Ag Ventilplatte für eine Verschlusseinrichtung zum vakuumdichten Verschließen einer Öffnung in einer Wand

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3431037A1 (de) * 1984-08-23 1986-03-06 Leybold-Heraeus GmbH, 5000 Köln Magnetventil fuer die vakuumanwendung
JPH03114687U (zh) * 1990-03-08 1991-11-26
JP3210627B2 (ja) * 1998-09-30 2001-09-17 アプライド マテリアルズ インコーポレイテッド 半導体製造装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0074124A1 *

Also Published As

Publication number Publication date
KR20020010613A (ko) 2002-02-04
JP2000349031A (ja) 2000-12-15
WO2000074124A1 (fr) 2000-12-07
TW445505B (en) 2001-07-11

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