EP1145292A1 - Support de substrat - Google Patents

Support de substrat

Info

Publication number
EP1145292A1
EP1145292A1 EP99963537A EP99963537A EP1145292A1 EP 1145292 A1 EP1145292 A1 EP 1145292A1 EP 99963537 A EP99963537 A EP 99963537A EP 99963537 A EP99963537 A EP 99963537A EP 1145292 A1 EP1145292 A1 EP 1145292A1
Authority
EP
European Patent Office
Prior art keywords
substrate holder
substrate
sealing
chamber
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99963537A
Other languages
German (de)
English (en)
Inventor
Andreas STEINRÜCKE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag Microtech GmbH
Original Assignee
Steag Microtech GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag Microtech GmbH filed Critical Steag Microtech GmbH
Publication of EP1145292A1 publication Critical patent/EP1145292A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Definitions

  • the invention relates to a substrate holder for holding a substrate, in particular a semiconductor wafer.
  • Substrate holders for holding semiconductor wafers are known in the art.
  • the wafer is held, for example, by means of a vacuum, which is applied to one side of the wafer via vacuum fingers.
  • a substrate holder holding elements lying against an edge of the wafer are provided.
  • Such an application is e.g. B. a metal plating, especially a copper plating of one of the two wafer surfaces. With such a metal plating, a treatment fluid containing the respective metal is passed over a wafer surface to be plated, while a voltage is applied between an anode opposite the wafer and the wafer surface to be plated.
  • the front side of the wafer to be plated is electrically contacted. Electrical contacting of the rear side of the wafer is not possible, since the high current density required for the plating on the front side to be plated cannot be achieved by contacting the rear side without electronic structures formed in the wafer, such as, for. B. transistors to destroy.
  • the electrical contacts for the electrical contacting of the front of the wafer must also be protected from the electrolyte, since they would otherwise also build up an undesired metal layer.
  • the substrate holders described above do not provide for electrical contacting of a wafer surface to be treated or for sealing the wafer surface not to be treated against a treatment fluid.
  • a device for plating a wafer in which the wafer is placed on a base part with a central opening corresponding to the substrate shape or on a seal located on the base part.
  • the wafer In order to hold the wafer firmly, it is pressed with an inflatable balloon against the base part or the seal, which extend perpendicular to the wafer surface.
  • the seal has several undercuts in order to enable electrical contacting of the surface of the wafer facing the seal.
  • the overlap between the seal and the wafer is relatively large, which leads to a high margin scrap, since this area is sealed off from treatment.
  • areas with a relative calm flow form at the interface between the seal and the wafer when a fluid flows against the wafer, which leads to inhomogeneous treatment of the wafer in this area.
  • US-A-5,447,615 also shows a device in which a wafer is clamped between a circumferential seal located on a base part and an inflatable balloon.
  • the wafer is electrically contacted through an opening in a sealing part which projects radially inwards relative to the rest of the seal.
  • JP-A-7-211724 a device for plating a wafer is known, in which the wafer is pressed with a substrate holder against a seal resting on an upper edge of a treatment basin.
  • the present invention has for its object to provide a substrate holder that a sealing of a wafer surface to be treated can be sealed in a simple and reliable manner with respect to the other with simultaneous electrical contacting of the surface to be treated, has a slight overlap between the wafer and the seal and enables a good flow of a treatment fluid in the region of the interface between the wafer and the seal.
  • a substrate holder for holding a substrate, in particular a semiconductor wafer, with a first part and a second part which has a central opening corresponding to the shape of the substrate, the substrate being able to be received between the first and second parts, solved in that a circumferential seal is provided on the inner circumference of the second part, which forms an inner circumference widening away from the substrate and at least has an undercut.
  • the circumferential seal on the inner circumference of the part having the central opening forms a radially inner boundary of the substrate holder. Due to the inner circumference widening away from the substrate, there is good flow behavior in the area of the interface between the wafer and substrate when the substrate is treated with treatment fluid.
  • the at least one undercut in the seal furthermore makes it possible to make electrical contact with the top side of the wafer to be treated that points toward the central opening outside a treatment fluid contact surface of the wafer.
  • the seal is advantageously formed by a sealing material attached to the inner circumference of the second part of the substrate holder, which is preferably welded on, in order to form a simple and inexpensive seal.
  • the sealing material preferably overlaps an edge region of the substrate in order to provide a secure seal.
  • electrical contacting of the substrate surface to be treated is made possible in this edge region.
  • the seal has a sealing lip, which preferably forms a tip.
  • the sealing lip in particular with a tip, has the advantage of a good and defined seal and a defined transition between the wafer and the sealing lip, in order to provide a uniform seal over time.
  • the sealing lip closes the sealing material with an inner circumference, i.e. that the sealing lip defines the innermost area of the sealing material in order to ensure a uniform flow of a treatment fluid along the inner circumference of the sealing material.
  • the sealing lip is formed by milling out the sealing material.
  • a sealing material to an inner circumference of the second part of the substrate holder, in particular by welding the material, it is difficult to provide the required accuracies with regard to the shape and position of the sealing lip.
  • the sealing material is advantageously made of plastic and is elastic. The elasticity must not be too high so that the seal provides sufficient pressure and a good seal against the wafer.
  • an elastic element opposite the seal is provided on the first part of the substrate holder in order to generate the required contact pressure and to compensate for the low elasticity of the sealing material.
  • the elastic element makes the substrate elastic against the relatively rigid one Seal pressed to prevent the wafer from being damaged by the seal.
  • the elastic element advantageously lies opposite the sealing lip in order to elastically press the substrate precisely in this area against the tip of the sealing lip in order to provide a good seal.
  • the elastic element is an O-ring.
  • the elastic element is advantageously held in a groove, in particular a dovetail groove of the first part of the substrate holder, in order to fix the position of the elastic element.
  • the dovetail groove is particularly advantageous because on the one hand it offers a good fixation of the O-ring and on the other hand it allows the O-ring to expand laterally.
  • At least one centering element is provided on the second part of the substrate holder.
  • the at least one centering element ensures the position of the substrate with respect to the seal and the position of the first and second parts of the substrate holder relative to one another in order to provide a uniform sealing effect.
  • the at least one centering element advantageously has a slope, along which a sliding centering can take place.
  • a plurality of centering elements define an inner circumference which essentially corresponds to the outer circumference of the substrate in order to prevent lateral movement of the substrate during a treatment and in order to be able to apply the seal precisely at the same time.
  • the centering element is formed in one piece with the sealing material and milled out of the latter, which enables the centering element to be manufactured cost-effectively.
  • milling out the sealing material again has the advantage that high accuracies can be maintained.
  • At least one centering element is provided in the first part of the substrate holder in order to Ensure tration of the first and second parts of the substrate holder.
  • the centering element on the first part of the substrate preferably has a bevel which is opposite the bevel of the centering element on the second part of the substrate holder and is complementary to it in order to enable centering of the two parts in a simple manner.
  • the groove receiving the elastic element advantageously adjoins the centering element.
  • the substrate holder has a contact arrangement.
  • the contact arrangement is advantageously arranged on the second part of the substrate holder.
  • the contact arrangement extends into the area of the undercut of the seal.
  • the contact arrangement has at least one contact spring which is biased in the direction of the substrate and thus ensures good contacting even in the event of vibrations or slight movements of the substrate.
  • a plurality of contact springs are formed by cutouts in an annular contact member in order to provide uniform electrical contacting in a simple and inexpensive manner over an outer circumference of the substrate.
  • At least one first chamber is formed between the first and second parts of the substrate holder, which chamber advantageously serves to accommodate the contact arrangement.
  • the first chamber advantageously extends around the central opening of the substrate holder, so that it would be annular in the case of a round substrate and angular in the case of an angular substrate.
  • an inner circumference of the first chamber is through the elastic Sealed element on the first part of the substrate holder, the substrate and the seal on the second part of the substrate holder.
  • An outer periphery of the first chamber is sealed by at least one sealing element on the first and / or second part of the substrate holder.
  • the sealing element is an O-ring for a good and inexpensive seal.
  • At least one second chamber formed between the first and second parts of the substrate holder is provided.
  • the second chamber advantageously extends around the first chamber and has at least one sealing element on the first and / or second part of the substrate holder for sealing the second chamber.
  • Two sealing elements which are preferably O-rings, are advantageously provided for sealing the second chamber.
  • a device for applying a vacuum to the first and / or second chamber is preferably provided to hold the first and second parts of the substrate holder together.
  • the first and second parts can be held together in a simple manner by means of a vacuum and can be easily separated from one another by releasing the vacuum, for example in order to allow access to a substrate accommodated between the two parts.
  • a fluid such as N 2
  • N 2 can advantageously be applied to the first chamber in order to generate a counterpressure for the pressure acting on the sealing lip by the treatment fluid.
  • a substrate contact surface is provided on the first part of the substrate holder, for the side of the substrate that is not to be treated, which is essentially adapted to the shape of the substrate.
  • the first and second part of the substrate holder each advantageously have a metal body in order to provide the rigidity and strength required for the substrate holder.
  • the metal bodies are coated with plastic.
  • the coatings advantageously have areas with different thicknesses in order to allow the above-mentioned grooves, chambers and the like to be formed.
  • Fig. 1 is a schematic sectional view of an inventive
  • Substrate holder disposed over a treatment device 2 shows a detailed view of a sealing arrangement according to the invention of the substrate holder of the present invention
  • FIG. 3 shows an enlarged partial view of a region of the substrate holder according to FIG. 1
  • FIG. 4 is an enlarged partial view similar to the view in FIG. 3, which shows a substrate holder according to the invention according to a second exemplary embodiment of the invention.
  • the treatment device 3 is a metal plating device, such as a copper plating device, which conducts treatment fluid containing a metal, such as copper, onto the wafer 2 from below.
  • a metal plating device such as a copper plating device, which conducts treatment fluid containing a metal, such as copper, onto the wafer 2 from below.
  • the loading between action device 3 and a voltage facing the top of the substrate facing the treatment device is a metal plating device, such as a copper plating device, which conducts treatment fluid containing a metal, such as copper, onto the wafer 2 from below.
  • the substrate holder 1 consists of an upper cover 5 and a lower ring 6, and the substrate 2 is clamped between the cover 5 and the ring element 6 - as will be described in more detail below.
  • the cover 5 has a metal body 8 which is coated with a plastic coating 9.
  • the top 10 of the metal body 8 is flat, and an underside 11 is stepped such that the metal body 8 has a greater thickness in a central region, which essentially corresponds to the shape of the wafer 2, than in an edge region of the metal body 8.
  • the coating 9 has a substantially uniform thickness on the top and on the sides of the metal body 8.
  • the coating in the edge area ie in the area where the metal body 8 has a smaller thickness, is at least partially thicker, as can be seen in the figures.
  • the coating 9 could have a uniform thickness around the entire metal body 8, and additional material could be attached to this coating in the edge region of the metal body 8, e.g. B. be welded on.
  • a first region, in which the coating 9 is made thicker, is where the metal body 8 changes from a first thickness to a second thickness, as can best be seen in FIG. 2.
  • a dovetail groove 13 is formed in the coating 9, in which an O-ring 15 is received.
  • the dovetail groove 13 can be milled out of the material forming the coating 9. Alternatively, the dovetail groove could also be formed in this form during the coating of the metal body 8. Adjacent to the dovetail groove 13, the material of the coating 9 forms a web 17 with a bevel 19 which is inclined inwards, as can be seen in FIG. 2. A second area, in which the coating 9 is thicker, is located at the edge of the cover 5, as can best be seen in FIG. 3. In this area, a dovetail groove 20 is formed, in which an O-ring 21 is arranged. A downwardly open space 23 is formed between the first and second thickened regions of the coating 9 and extends around the entire circumference of the cover.
  • the lower ring 6 of the substrate holder 1 has an annular metal body 25 with an essentially rectangular cross section with rounded edges.
  • An inner side 26 of the metal body 25 is slightly chamfered, in such a way that the inner circumference tapers upwards.
  • a small projection 27 is provided, which forms a rounded edge of the metal body 25.
  • the metal body 25 has threaded bores 28 in an upper side for receiving screws 29 in order to fasten a contact arrangement to the ring 6, as will be described below.
  • the metal body has a raised projection 30.
  • the metal body 25 is almost completely, with the exception of the projection 30, surrounded by a coating 32.
  • the coating 32 is made of the same material as the coating 9, although this is not mandatory.
  • the coating 32 is thicker on an outer upper edge of the ring 6 in order to form an elevated support 34 for the cover 5.
  • a recess 36 is formed in the raised support 34, into which the O-ring 21 located on the cover 5 extends when the cover 5 and the ring 6 are in contact.
  • a sealing material 38 is attached that z. B. is welded to the coating 32.
  • the sealing material 38 could consist of the same material as the coating 32 and be formed in one piece with it.
  • the sealing material 38 extends radially inward from the ring 6.
  • a surface 40 of the sealing material 38 is formed in alignment with an upper side of the coating 32, as can best be seen in FIG. 2.
  • the sealing material 38 extends around the entire inner circumference of the ring 6 and overlaps an edge region of the wafer 2 in the lateral direction, as can best be seen in FIG. 2.
  • a sealing lip 42 is formed which extends perpendicular to the surface 40 and ends in a tip 43.
  • the sealing lip closes with an inner circumference of the sealing material, that is to say that the sealing lip 42 overlaps the wafer 2 as far as possible.
  • the sealing material 38 is cut out to form the surface 40 in order to form a free space 45 between it and the edge region of the wafer 2.
  • the lateral overlap of the sealing material 38 with the wafer 2 is 3 mm, that is to say that an edge region of 3 mm of the wafer is sealed off from a treatment fluid directed from the treatment device 3 onto the wafer.
  • this distance can also be changed to two or one millimeter or another value, it being necessary to ensure that an essentially free space 45 remains between the wafer 2 to be treated and the sealing material 38, in which - as will be described below - Electrical contact is made to a top of the wafer to be treated.
  • This so-called marginal exclusion is necessary in order to prevent the copper from coming onto the back of the wafer 2 when one of the upper sides of the wafer is being plated, while at the same time making electrical contact with the surface of the wafer to be plated is possible.
  • Electrical contacting on the rear side of the wafer is not possible, since the high current density for the plating cannot be achieved from the rear side, without electronic components, such as, for example, formed on the wafer.
  • B. transistors to destroy It should be mentioned here that a thin layer of a suitable metal can be applied, for example sputtered, to the upper side of the wafer to be plated in order to enable the current flow required for the plating or the high current density.
  • the sealing lip lies concentrically around a center point of the wafer in order to produce a uniform edge exclusion.
  • the sealing lip 42 lies opposite the O-ring 15 arranged on the cover 5 in such a way that the O-ring force is directed precisely at the tip of the sealing lip when the wafer 2 is clamped between the O-ring 15 and the sealing lip 42.
  • the sealing material 38 furthermore forms a multiplicity of projections 28 which are arranged radially outward with respect to the sealing lip 42 and which are higher than the sealing lip 42.
  • the projections 48 have in an upper region of a side 49 pointing towards a center of the device each have a slope 50 which tapers towards the bottom.
  • the inward-facing side 49 of the projection 48 is straight in a lower region.
  • the straight regions of the side 49 of the projections 48 define an inner circumference that corresponds to an outer circumference of a wafer 2. Wafers 2 deposited on the ring can thus be exactly centered with respect to the ring by means of the bevel 50 and held against lateral sliding by the straight sections of the sides 49.
  • the bevels 50 of the projections 48 are also complementary to the bevels 19 of the cover 5 in order to also center the cover 5 with respect to the ring 6.
  • a metal ring 54 is screwed onto the lower ring 6 via the screws 29.
  • a reinforcing ring 55 is provided between the metal ring 54 and a head of the screw 29.
  • the metal ring 54 is connected directly or via the metal body 45 to a device for applying a voltage (not shown in more detail).
  • the metal ring 54 has cutouts for forming spring elements 58, one of which is shown in FIG. 2. As can be seen in FIG. 2, the spring element 58 extends into the space 45 formed by the cutout in the sealing material 38 between the sealing material 38 and the wafer 2.
  • the spring elements 58 are opposite an outer region in which the fastening to the metal body 25 takes place, bent upwards, and in such a way that they protrude over the tip 43 of the sealing lip 42 in an unloaded state.
  • the underside of the wafer 2 comes into contact with the spring element 58, which springs downward, thereby ensuring good contacting of the underside of the wafer 2.
  • a round contact tip can be formed on the spring element 58 in the region in which the wafer 2 is contacted in order to prevent damage to the contacted wafer surface.
  • a chamber 60 is formed in between, to which a vacuum can be applied by means of a device, not shown, around the ring 6 to hold the lid 5.
  • the chamber 60 is sealed on the outer circumference by the O-ring 21 and on the inner circumference by the sealing lip 42, the O-ring 15 and the wafer 2 clamped between them.
  • the ring 6 can also be held on the lid 5 in any other suitable manner.
  • the ring 6 is placed on a support, not shown, the vacuum in the chamber 60 is released and the Cover 5 is raised with respect to ring 6.
  • a wafer handling robot can retract from one side through the gap formed between the cover 5 and the ring 6 and can grip a wafer 2 located between the cover 5 and the ring 6 and lift it above the projection 48 and move it sideways out of the substrate holder.
  • the wafer handling robot moves with a wafer 2 held thereon from one side into the gap formed between the lid 5 and the ring 6 and deposits the wafer 2 on the ring 6. If the wafer 2 is not exactly centered with respect to the ring 6 when it is placed down, centering takes place via the bevels 50 on the projections 48.
  • the wafer 2 comes into contact with the spring elements 58.
  • the wafer handling robot is then moved out of the area between the lid 5 and the ring 6, and the lid 5 is lowered.
  • the cover 5 is centered with respect to the ring 6 via the slopes 15 and 19.
  • the O-ring 15 presses the wafer 2 firmly against the tip 43 of the sealing lip 42 in order to provide a good seal there.
  • the O-ring 21 comes into engagement with the recess 36 in order to provide a good seal at this point.
  • a vacuum is then again applied to the chamber 60 so that the ring 6 is held firmly on the cover 5 and can be transported together with the cover 5 over the treatment device 3.
  • FIG. 4 shows an alternative embodiment of a substrate holder 1.
  • 4 has a lid 5 and a lower ring 6, each of which is a metal body
  • the metal body 8 and the metal body 25 are coated
  • the main difference between the substrate holder according to FIGS. 1-3 and the substrate holder according to FIG. 4 is that the cover 5 and the ring 6 according to FIG. 4 have larger external dimensions and that a further chamber 62 radially outside with respect to the chamber 60 is formed between the upper cover 5 and the lower ring 6.
  • the chambers are sealed off from one another by an O-ring 64, which is arranged in a dovetail groove 66 formed in the coating 9.
  • the O-ring 64 presses against an elevated part 68 of the coating 32 in order to seal the chambers 60 and 62 against one another.
  • An inner circumference of the chamber 60 is sealed by the O-ring 15, the wafer 2 and the sealing lip 42 in the same way as previously with reference to the first exemplary embodiment.
  • An outer circumference of the chamber 62 is sealed by an O-ring 70, which is arranged in a dovetail groove 72 of the coating 9 and, when the substrate holder 1 is closed, presses against an elevated part 74 of the coating 32.
  • a vacuum can be applied to the chamber 62 via a device, not shown, in order to secure the lower ring 6 to the upper cover 5.
  • the advantage of using a second chamber 62 to which a vacuum can be applied is that the vacuum applied to the chamber 62 does not act on the sealing lip 42, in contrast to a vacuum applied to the chamber 60. Impairment of the sealing effect of the sealing lip 42 on the wafer 2 can thus be excluded.
  • the substrate holder is not restricted to the specifically illustrated embodiments. So z. B. instead of the device for applying a vacuum for holding the lower ring 6 on the lid 5 a Magnet arrangement, in particular an electromagnet arrangement, can be provided for releasably holding the lower ring 6 on the upper cover 5. It is also possible to use a mechanical holding device, such as. B. a clamping device to provide to hold the lid 5 and the lower ring 6 together.
  • the lid 5 has been referred to as the upper lid and the ring 6 has been referred to as the lower ring 6, the substrate holder can be in any orientation, e.g. B. vertically or in an orientation rotated by 180 °.
  • the substrate head can be used for both round and square substrates or substrates with any shape, both the shape of the lower ring and the shape of the cover being adapted to the shape of the substrate.
  • the lower ring can thus also have an angular shape with an angular central opening. In the same way, they can also have different shapes between the cover and the lower ring formed chambers.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Gasket Seals (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

L'invention concerne un support de substrat destiné au maintien du substrat, en particulier d'une plaquette de semi-conducteur, pour lequel on vise à obtenir une bonne étanchéité des surfaces de la plaquette, ainsi qu'un bon contact électrique dans l'une des surfaces de la plaquette. A cet effet, le support comprend une première portion et une deuxième portion, laquelle présente une ouverture médiane correspondant à la forme du substrat, ledit substrat étant positionné entre la première et la deuxième portions, et est caractérisé en ce qu'il est prévu sur le pourtour interne de la seconde portion, une garniture d'étanchéité périphérique ayant au moins une contre-dépouille.
EP99963537A 1998-12-22 1999-12-15 Support de substrat Withdrawn EP1145292A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19859467 1998-12-22
DE19859467A DE19859467C2 (de) 1998-12-22 1998-12-22 Substrathalter
PCT/EP1999/009942 WO2000038222A1 (fr) 1998-12-22 1999-12-15 Support de substrat

Publications (1)

Publication Number Publication Date
EP1145292A1 true EP1145292A1 (fr) 2001-10-17

Family

ID=7892263

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99963537A Withdrawn EP1145292A1 (fr) 1998-12-22 1999-12-15 Support de substrat

Country Status (6)

Country Link
US (1) US6569302B1 (fr)
EP (1) EP1145292A1 (fr)
JP (1) JP2002540011A (fr)
KR (1) KR20010086153A (fr)
DE (1) DE19859467C2 (fr)
WO (1) WO2000038222A1 (fr)

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KR20010086153A (ko) 2001-09-08
DE19859467A1 (de) 2000-07-06
US6569302B1 (en) 2003-05-27
JP2002540011A (ja) 2002-11-26
DE19859467C2 (de) 2002-11-28
WO2000038222A1 (fr) 2000-06-29

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