EP1143512A2 - Preparation thermisch leitender Stoffe durch flüssigmetallüberbrückte Teilchengruppen - Google Patents

Preparation thermisch leitender Stoffe durch flüssigmetallüberbrückte Teilchengruppen Download PDF

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EP1143512A2
EP1143512A2 EP01303105A EP01303105A EP1143512A2 EP 1143512 A2 EP1143512 A2 EP 1143512A2 EP 01303105 A EP01303105 A EP 01303105A EP 01303105 A EP01303105 A EP 01303105A EP 1143512 A2 EP1143512 A2 EP 1143512A2
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Prior art keywords
thermally conductive
liquid
particulate
liquid metal
alloy
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French (fr)
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EP1143512A3 (de
EP1143512B1 (de
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Sanjay Misra
Richard M. Olson
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Bergquist Co Inc
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Bergquist Co Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F2013/005—Thermal joints
    • F28F2013/006—Heat conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Definitions

  • the present invention relates generally to a method of preparing thermally conductive mechanically compliant compounds for improving heat transfer from a heat generating semiconductor device to a heat dissipator such as a heat sink or heat spreader. More specifically, the present invention relates to a technique for preparing highly thermally conductive polymer compounds such as a polymer liquid loaded or filled with percolating particulate clusters coated with a liquid metal. Such compounds are highly effective through liquid metal enhanced percolation. More particularly, the present invention involves a process for uniformly coating particulate solids with a liquid metal, and thereafter blending the coated particulate with a liquid or fluid polymer for forming the compliant pad with thermal vias therein.
  • liquid metals have been proposed for incorporation in thermally conductive pastes for heat generating semiconductor devices.
  • the application of liquid metals for this purpose was not widely used, primarily because of problems created with the tendency of the liquid metal to form alloys and/or amalgams, thereby altering and modifying the physical properties of the liquid metal containing mounting pad.
  • the highly thermally conductive pastes of the prior art are always electrically conductive which may not be desirable in certain applications and situations.
  • liquid metals and/or alloys of liquid metal were blended with a polymer, with the polymer thereafter being cured in order to provide a composite thermally conductive mounting pad. While useful, these devices did not find widespread application due primarily to the instability of the liquid metal component in the finished product.
  • This instability is due to the extremely high surface tension as well as other chemical and physical properties of the liquid metal component.
  • the dispersed liquid metal droplets had a tendency to coalesce, a process of Ostwald ripening, and cause macroscopic separation of the metal from the polymer matrix.
  • the present invention utilizes the combination of a liquid metal coated particulate with a polymer carrier to prepare a thermal bridge having highly desirable thermal and electrical properties, and adapted to be configured to be interposed between a semiconductor device and a heat dissipator.
  • the method of preparation described in the invention also renders the compounds highly stable in terms of macroscopic phase separation.
  • the method of preparation renders possible the formation of large percolating clusters of liquid metal coated particles which enhances heat transfer.
  • the combination also possesses desirable mechanical properties which facilitate its use in production operations.
  • a particulate such as boron nitride, alumina or aluminum nitride is initially dried, and thereafter placed in contact with a liquid metal, typically a metal that is liquid at room temperature or melting at a relatively low temperature, typically below 120 °C and preferably below 60 °C.
  • the liquid metal comprises an alloy of gallium and/or indium, such as a gallium-indium-tin-zinc alloy, a bismuth-indium alloy or a tin-indium-bismuth alloy.
  • a mixture of dried particulate and liquid metal is subjected to a mixing operation until the particulate is uniformly coated with the liquid metal.
  • the boron nitride particulate be dry before blending with the liquid metal alloy.
  • the boron nitride particulate be dry before blending with the liquid metal alloy.
  • the paste can also visualize the paste as a large percolating cluster.
  • the coated particulate is mixed with a liquid polymeric carrier material such as, for example, liquid silicone oil of a desired or selected viscosity. It is preferred that the liquid metal particulate be incorporated in the silicone mixture at or near the packing limit.
  • the packing fraction is typically between about 60% and 65% by volume coated particles, balance liquid silicone. At these volume fractions, one obtains mechanically compliant compounds that have excellent thermal conductivity due to high packing density. This improves heat transfer due to the creation of a compliant interface between the opposed spaced-apart surfaces of the semiconductor device and the heat sink.
  • the thermally conductive particulate is initially selected, with boron nitride being the preferred particulate.
  • Materials such as aluminum oxide (alumina), and aluminum nitride have also been found to be useful when properly dried prior to contact with the liquid metal.
  • the particle size should be such that the average cross-sectional thickness is less than about 5 microns.
  • a liquid metal preferably a low melting alloy, is added to the particulate and mechanically mixed until the particulate surface is substantially uniformly wet by the liquid metal and a uniform paste is formed.
  • a liquid polymer preferably a liquid or fluid silicone polymer is added to the liquid metal paste to form a blend, with this blend being subjected to a mechanical mixing operation which typically includes a vigorous or high-speed mixing step, with vigorous mixing being continued until a visually smooth paste is formed.
  • liquid metal coated particulate When incorporated into liquid silicone, it has been found that the addition of the liquid metal coated particulate effectively reduces viscosity. The mechanism involved in this alteration of viscosity is believed to be due to the reduction of viscous drag at the "effective particle"-silicone oil interface.
  • the liquid metal coating increases the sphericity of the configuration of the particulate, and also contributes to an effective "softness" of the otherwise hard particles. These two factors function in a mutually cooperative fashion so as to reduce both viscosity and modulus of the resulting composite.
  • the liquid metal coated particulate in addition to effectively transferring heat and/or thermal energy, also anchors the liquid metal into a three phase composite to prevent gross migration.
  • the three phases are particle-liquid metal-polymer.
  • the liquid coated particulate provides a Bingham-plastic like character in the resultant composite, this allowing the paste to remain static in the absence of external stress, and yet conform and/or flow easily when subjected to stress.
  • liquid metals do not blend well with polymer liquids, including silicones.
  • particulate in particular boron nitride
  • the microscopic separation phenomena is reduced, with the liquid metal being supported or retained in coated particulate form, due to the increased thixotropy of the metal phase.
  • the coated particulate when added to silicone, functions effectively to form thermal vias within the composite.
  • the thermal conductivity of the particulate such as boron nitride, may even exceed that of the liquid metal, for example, a eutectic alloy of gallium, tin and indium.
  • the composite in addition to its thermal properties, the composite possesses desirable electrical properties as well.
  • Formulations having the optimal thermal properties have been found to possess electrical volume resistivity in the range of 10 8 to 10 12 ⁇ -cm.
  • the technique of the present invention involves the steps of initially selecting a particulate material for the application.
  • Boron nitride particles are particularly desirable, with those particles having a BET surface area of 0.3 m 2 -g -1 have been found quite useful.
  • Boron nitride is typically configured in the form of anisotropic platelet-like particles, with plate diameter ranging from about 5-50 ⁇ m and the plate thickness being from about 2-3 ⁇ m.
  • the next step is coating of the particulate. When coated with liquid metal, these particles have liquid metal/boron nitride volume ratios ranging from 4:1 to 1:1. Coating is achieved by mechanically mixing as previously stated. This is followed by the addition of the appropriate amount of liquid or fluid silicone to the coated particulate, with this addition being followed by high-speed mixing until a visually smooth paste is obtained.
  • boron nitride is the preferred particulate
  • favorable results have been achieved through the utilization of alumina, with the alumina typically requiring a pre-treatment which involves thorough drying of the particulate.
  • Other particulates such as aluminum nitride can also form liquid metal pastes after thorough drying.
  • the particulate selected was boron nitride, with the particulate having the normal platelet-like configuration and averaging 40 microns in diameter, and 2 microns in cross-sectional thickness. This particulate is readily wetted by the gallium alloy.
  • the BN powder When coated with the liquid gallium alloy, the BN powder did not form hard aggregates, but rather formed a thixotropic paste. This configuration is desirable inasmuch as BN has a high thermal conductivity in the "in-plane" direction, with the conductivity being substantially improved with liquid metal bridging.
  • BN has a specific gravity of 2.25 and a thermal conductivity (in-plane) of 350 W-m -1 -K -1 (orientationally averaged thermal conductivity is reported around 60 W-m -1 -K -1 ).
  • the polymer matrix chosen was a silicone oil with a kinematic viscosity of 100 centistokes, a specific gravity of 0.86 and a thermal conductivity of 0.15 W-m -1 -K -1 .
  • the metal has a specific gravity of 6.5 and a thermal conductivity of 20 W-m -1 -K -1 .
  • the anisotropic platelet BN particles were initially coated with the liquid gallium alloy.
  • the liquid metal-to-BN volume ratios were selected in three different ranges as set forth in Table I hereinbelow: Formulation: 1 2 3 Material Parts Wt. Volume % Parts Wt. Volume % Parts Wt. Volume % BN (40 ⁇ m) 100 14 0 0 0 0 BN (10 ⁇ m) 0 0 100 14 100 15 [Liquid gallium] Alloy 1 [of Example I ⁇ 1000 49 1000 49 800 43 Silicone oil 100 37 100 37 100 42
  • the coating was accomplished by mechanically mixing the BN powder with the liquid gallium alloy of Example I, and this may be achieved either by hand or in a high-speed mixer. Mixing was followed by addition of the appropriate amount of the silicone oil followed by high-speed mixing until a visually smooth paste was obtained.
  • the mixing procedure stabilizes the compound.
  • the surface tension of silicone oil is around 20 mN-m -1 whereas for the liquid metal it is of the order of 400-500 mN-m -1 .
  • This means that the spreading coefficient or the ability of silicone oil to wet the surface is far greater than that of a liquid metal.
  • the BN particulate is coated with liquid metal prior to contact with silicone oil so as to achieve proper and desirable wetting. Specifically, the following advantages are present:
  • the particulate selected was aluminum oxide or alumina, a particulate of spherical symmetry, with a diameter of 3 ⁇ m and a BET surface area of 2 m 2 /g. Both alumina and the alloy were heated to 100 °C (above melt point of Alloy 2) and mixed. When coated with the liquid alloy, the alumina formed a smooth, thixotropic paste. Alumina has a specific gravity of 3.75 and a thermal conductivity 25 W-m -1 -K -1 .
  • the polymer matrix chosen was a silicone oil with a kinematic viscosity of 100 centistokes, a specific gravity of 0.86 and a thermal conductivity of 0.15 W-m -1 -K -1 .
  • the liquid metal has a specific gravity of 7.88 and a thermal conductivity of 25 W-m -1 -K -1 .
  • the alumina particles were initially coated with the alloy.
  • the metal-to-alumina volume ratios were selected in three different ranges as set forth in Table II Formulation: 1 2 3 Material Parts Wt. Volume % Parts Wt. Volume % Parts Wt. Volume % Alumina (3 ⁇ m) 160 15 220 20 375 30 Alloy 2 1050 45 900 40 800 30 Silicone oil 100 40 100 40 100 40 100 40
  • the coating was accomplished by mechanically mixing the alumina powder with the liquid alloy of Example II, and this may be achieved either by hand or in a high-speed mixer. Mixing was followed by addition of the appropriate amount of the silicone oil followed by high-speed mixing until a visually smooth paste was obtained.
  • EXAMPLE III Alloy Melting Point (°C) Gallium (%) Indium (%) Tin (%) Bismuth (%) Zinc (%) 1 7 61 25 13 0 1
  • the particulate selected was alumina of Example II. When coated with the liquid gallium alloy, the alumina formed a smooth, thixotropic paste.
  • the polymer matrix chosen was a siliccne oil with a kinematic viscosity of 100 centistokes, a specific gravity of 0.86 and a thermal conductivity of 0.15 W-m -1 -K -1 .
  • the liquid metal has a specific gravity of 6.5 and a thermal conductivity of 20 W-m -1 -K -1 .
  • the alumina particles were initially coated with the liquid gallium alloy.
  • the liquid metal-to-alumina volume ratios were selected in three different ranges as set forth Formulation: 1 2 3 Material Parts Wt. Volume % Parts Wt. Volume % Parts Wt. Volume % Alumina (3 ⁇ m) 100 8 150 13 200 18 Alloy 1 1100 55 1000 50 900 45 Silicone oil 100 37 100 37 100 37
  • the coating was accomplished by mechanically mixing the alumina powder with the liquid gallium alloy of Example I, and this may be achieved either by hand or in a high-speed mixer. Mixing was followed by addition of the appropriate amount of the silicone oil followed by high-speed mixing until a visually smooth paste was obtained.
  • the formulation 1 (Table I) was tested for thermal conductivity.
  • the ASTM D5470 method yielded a thermal conductivity of 8.0 W-m -1 -K -1 .
  • Controlled thermal impedance testing against industry standard materials was also undertaken.
  • One of these is a generic thermal interface compound from Dow Corning (DC-340 Thermal grease) and another is a high performance compound made by Shin-Etsu Corporation (G-749 Thermal Grease).
  • G-749 Thermal Grease also tested was the gallium liquid metal of Example I.
  • the thermal impedance test is shown schematically in Figure 7.
  • the heat spreader was a tin-coated copper plate.
  • the heat spreader in turn was coupled to an infinite heat sink, held at 25°C, by DC-340 thermal grease.
  • the temperature drop across the interface i.e. temperature difference between transistor case and heat spreader
  • the normalized numbers of represented in Table IV hereinbelow Interface Material Thermal Conductivity (W-m -1 -K -1 ) Thermal Impedance (Normalized) Air 0.01 5-6 Silicone oil 0.1 3 Dow Corning DC-340 1.0 2 Shin-Etsu [MPU 3.7] G-749 3 1 Formulation 1 8.0 0.5-0.6 Liquid metal 25 0.5-0.6
  • Figure 1 illustrates the manner in which improved contact is obtained between individual coated particulate, particularly BN coated with a liquid gallium alloy.
  • the surface characteristics or properties of the composite improve the contact through the formation of liquid bridges.
  • This sketch demonstrates the feature of surface wetting of the particulate providing a significant reduction in surface resistivity normally encountered between adjacent particles.
  • Figure 2 illustrates the feature of improved percolation resulting from near-critical packing fraction.
  • the surface-to-surface contact as shown in the portion to the left of Figure 2 is enhanced when a near-critical packing fraction is achieved through higher concentrations.
  • Figure 5 demonstrates the feature of the present invention wherein individual discrete liquid metal coated particulate will form aggregations or agglomerates, with separation of discrete droplets being achieved when the coated particulate is blended with a polymeric material such as silicone oil. Certain of these features become manifest from the photo-micrograph of Figure 6.
  • the assembly generally designated 20 includes a heat generating semiconductor device as at 21 mounted upon a suitable or conventional copper base as at 22.
  • a compliant interface made pursuant to the present invention is illustrated at 23, with the interface being interposed between the opposed surfaces of copper base 22 and heat sink member 24. Heat flow occurs along the line and in the direction of the indicating arrow.
  • Figure 9 is provided to demonstrate the utilization of the compliant pad of the present invention in connection with a heat generating semiconductor device of conventional configuration.
  • the assembly 30 shown in Figure 9 includes a heat generating semiconductor device or package illustrated at 31 having a heat sink, heat spreader, or other heat dissipating member illustrated at 32.
  • a mechanically compliant pad 33 prepared in accordance with the present invention.
  • Figure 8 is a flow diagram of the steps undertaken in accordance with the creation of compliant pads in accordance with the present invention. As indicated, and as is apparent from the flow diagram, the particulate and alloy are blended until the surfaces of the particulate are thoroughly wetted, and thereafter a paste formulation is prepared through the addition of a liquid polymer.
  • BN or alumina particulate can range in size from up to about 1 micron diameter and up to about 40 microns in cross-sectional thickness. It will be observed that the platelet-like configuration of boron nitride in particular provides a highly desirable combination when wetted with liquid metal, with the effective particle being illustrated in Figure 3 of the drawings. Viscosity control is aided by this feature.
  • the silicone oil utilized in the example is a typical liquid silicone, typically VEB 100 (Sivento Inc., previously Huls America), with these materials being, of course, commercially available. Viscosities up to about 1000 centistokes may be satisfactorily utilized.
  • One unusual feature of the present invention was electrical resistivity.
  • Formulation 1 When Formulation 1 is formed in a pad between opposed surfaces of a semiconductor and a heat sink, the resistivity has been found to be highly significant, having a value of up to about 10 12 ⁇ -cm (Formulation 1, Table I).

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Polyesters Or Polycarbonates (AREA)
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EP01303105A 2000-04-05 2001-03-30 Herstellung thermisch leitender Stoffe durch flüssigmetallüberbrückte Teilchengruppen Expired - Lifetime EP1143512B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/543,661 US6339120B1 (en) 2000-04-05 2000-04-05 Method of preparing thermally conductive compounds by liquid metal bridged particle clusters
US543661 2000-04-05

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EP1143512A2 true EP1143512A2 (de) 2001-10-10
EP1143512A3 EP1143512A3 (de) 2004-10-06
EP1143512B1 EP1143512B1 (de) 2008-02-27

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US (3) US6339120B1 (de)
EP (1) EP1143512B1 (de)
JP (1) JP2001329068A (de)
AT (1) ATE387722T1 (de)
CA (1) CA2343504A1 (de)
DE (3) DE1143512T1 (de)
ES (1) ES2163380T1 (de)
GR (1) GR20010300073T1 (de)
TR (1) TR200103156T3 (de)
TW (1) TW591776B (de)

Cited By (11)

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TW591776B (en) 2004-06-11
JP2001329068A (ja) 2001-11-27
USRE39992E1 (en) 2008-01-01
DE60132125T2 (de) 2008-12-18
ATE387722T1 (de) 2008-03-15
DE60132943T2 (de) 2009-02-26
EP1143512B1 (de) 2008-02-27
ES2163380T1 (es) 2002-02-01
DE60132125D1 (de) 2008-02-14
US6339120B1 (en) 2002-01-15
TR200103156T3 (tr) 2002-01-21
GR20010300073T1 (en) 2001-12-31
DE1143512T1 (de) 2002-04-18
US6624224B1 (en) 2003-09-23
DE60132943D1 (de) 2008-04-10
CA2343504A1 (en) 2001-10-05

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