EP1101243A1 - Procede permettant de remplacer un produit de traitement contenu dans un bassin de traitement et installation utilisee a cet effet - Google Patents

Procede permettant de remplacer un produit de traitement contenu dans un bassin de traitement et installation utilisee a cet effet

Info

Publication number
EP1101243A1
EP1101243A1 EP99907575A EP99907575A EP1101243A1 EP 1101243 A1 EP1101243 A1 EP 1101243A1 EP 99907575 A EP99907575 A EP 99907575A EP 99907575 A EP99907575 A EP 99907575A EP 1101243 A1 EP1101243 A1 EP 1101243A1
Authority
EP
European Patent Office
Prior art keywords
treatment
basin
medium
treatment medium
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99907575A
Other languages
German (de)
English (en)
Inventor
Mostafa Sabet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19815039A external-priority patent/DE19815039A1/de
Application filed by Individual filed Critical Individual
Publication of EP1101243A1 publication Critical patent/EP1101243A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Definitions

  • the invention relates to a method for changing a treatment medium contained in a treatment basin for a wet chemical treatment of silicon wafers, wherein a quantity of the contaminated treatment medium and a corresponding quantity of a non-contaminated treatment medium are drawn off at predefinable time intervals and / or after the treatment of a predefinable number of silicon wafers is introduced. Furthermore, the invention relates to a system for the wet chemical treatment of silicon wafers, with a treatment basin for receiving a treatment medium, a basin inlet line and a basin outlet line. In the production of semiconductors, wet-chemical methods for treating silicon wafers, also referred to below as wafers, are usually used.
  • a conventional system for the wet chemical treatment of wafers therefore comprises a multiplicity of treatment basins which are filled with a treatment medium or a treatment liquid (hereinafter also simply referred to as a liquid), for example phosphoric acid.
  • a treatment medium or a treatment liquid hereinafter also simply referred to as a liquid
  • the entire system is divided into so-called chemistry modules, with each chemistry module comprising a treatment basin, treatment basin inlet and outlet lines and the necessary infrastructure.
  • chemistry modules are referred to as a wet bench.
  • the treatment basin is first filled with the treatment medium (approximately 50 1 volume) in one operating cycle. Before this, however, this treatment medium is brought to a preselectable temperature in a so-called reservoir tank with a corresponding holding volume (approximately 501), so that it is not necessary to heat the treatment medium in the treatment basin in order to shorten the treatment idle times. Instead, a heater assigned to the treatment tank only has to maintain the operating temperature of the treatment medium.
  • lots of silicon wafers are introduced into the treatment basin for a predetermined treatment time. Due to an increasing contamination of the treatment medium during a cycle, its effect diminishes, which leads to a deterioration in the treatment result. For this reason, after a certain time or after the treatment of a certain number of silicon wafer lots, it is necessary to drain the treatment medium and to replace it with a fresh treatment medium, so that the cycle described above can start again.
  • hot modules i.e. in the case of modules receiving a hot treatment medium
  • the treatment medium is drained from the treatment basin into a cooling tank and held therein until the temperature has dropped to a value specified by the manufacturer.
  • the treatment medium is then either discarded or reprocessed.
  • the object of the invention is to provide a method which permits the treatment of silicon wafers with reproducible results and furthermore minimizes the service life, ie the idle time of the system. Furthermore, the task is to create a system that requires less space or clean room space and thus enables cost savings.
  • the object on which the invention is based is achieved by a method of the type mentioned at the outset, which is distinguished in that the amount corresponds to a fraction of the total amount of the treatment medium present in the treatment basin.
  • the amount of the withdrawn and the amount of the introduced treatment medium is metered by metering pumps, the treatment medium preferably being first withdrawn and then introduced.
  • the use of metering pumps has the advantage that a very precise metering of even small amounts of the introduced and withdrawn treatment medium can be achieved with simple means.
  • the introduced treatment medium which is preferably mixed beforehand from different media, is heated in the treatment basin. This has the advantage that an upstream heating of the introduced treatment medium is no longer necessary. Since the treatment medium introduced corresponds to a fraction of the total amount in the treatment basin, only a small amount of energy is required to heat this fraction. Usually, the heating assigned to the treatment basin, which is designed to maintain the temperature, should be sufficient for this.
  • the treatment medium is delivered directly from a supply unit assigned to a plurality of treatment basins.
  • the contamination of the treatment medium is measured and, depending on this measured value, the supply and the withdrawal of the treatment medium are controlled. This has the advantage that a further improvement and optimization of the method and thus the treatment results is possible.
  • the liquid contained in the treatment basin is circulated, the liquid being heated and filtered.
  • the method according to the invention makes it possible to dispense with heating and / or filtering when circulating; this leads to a significant simplification of the procedure.
  • the object on which the invention is based is also achieved by a system of the type mentioned at the outset, which is characterized by a metering pump arranged in each case in the basin inlet line and in the basin outlet line, and a control device assigned to the metering pumps, which detach and introduce a fraction of the total amount of the medium from or into the treatment basin.
  • the basin drain line (in the case of hot modules) is connected to a cooling tank, the receiving volume (for example 51) of which is smaller than the volume of the medium which can be accommodated in the treatment basin (for example 801).
  • At least one mixing tank is connected upstream of the treatment basin.
  • the mixing tank can be constructed with small dimensions, so that the required space is significantly less than that of the tanks previously used in the prior art.
  • the treatment basin is assigned a heater for heating the treatment medium.
  • the treatment pool is assigned a sensor for detecting the contamination of the treatment medium, the sensor being connected to the control device.
  • the treatment basin has an overflow chamber and a treatment chamber, both chambers being connected via a circulation circuit.
  • the circulating circuit preferably comprises a pump, a water heater and a filter. However, it is particularly preferred to dispense with the instantaneous water heater and / or the filter, so that the circulation circuit comprises only one pump and the corresponding lines.
  • Fig. 1 is a schematic representation of a treatment basin and the connected components
  • FIG. 2 shows a diagram to illustrate the method, the volume being plotted on the abscissa and the amount of impurities in the liquid being plotted on the ordinate.
  • a chemistry module is identified by reference number 10.
  • a chemistry module is part of a system for the wet-chemical treatment of silicon wafers, one or more chemistry modules forming a wet bench.
  • the system itself usually includes a wet bench.
  • the chemistry module 10 has a treatment basin 12 which is designed to receive a treatment medium or a treatment liquid 14.
  • a treatment medium or a treatment liquid 14 Several silicon wafers 16 are shown purely schematically, which are completely immersed in the treatment liquid 14 and are held by a schematically indicated carrier 18. Several of these silicon wafers 16 are referred to below as a lot. 10
  • the treatment basin 12 has two chambers 20, 22, the chamber 20 forming the treatment space and the chamber 22 forming an overflow space.
  • the treatment basin 12 further comprises a heater 24, which is arranged within the treatment room 20 in the floor area.
  • an inlet line 26 is provided, which is connected on the one hand to a supply unit V, not shown, and on the other hand opens into the overflow space 22.
  • a valve 28 and a metering pump 30 downstream thereof are arranged in the feed line 26.
  • a buffer tank 27 can be connected to the feed line 26, the capacity of which, however, is significantly less than that of a storage tank.
  • Sensors 31a to 31c are assigned to treatment room 20, and sensors 31d to 31e are assigned to overflow chamber 22, which provide signals dependent on the level of the liquid.
  • the three sensors 31a to 31c assigned to the treatment room 20 enable statements to be made about the level levels full, minimal and empty, while the two sensors 31d, 31e assigned to the overflow room 22 only provide signals about the level levels full and minimal.
  • the chemistry module 10 further comprises a circulation circuit 32 which connects the overflow space 22 to the treatment space 20 via a line 34.
  • a circulation circuit 32 which connects the overflow space 22 to the treatment space 20 via a line 34.
  • a pump 36 In this line 34 - seen downstream - a pump 36, a water heater 38 and a filter 40 are provided. In a particularly preferred embodiment, however, the instantaneous water heater and / or the filter are dispensed with.
  • a line 42 or 44 is connected, both of which open into a common drain line 46.
  • Both lines 42, 44 each include a valve 48 and 50, respectively.
  • a valve 54 and a metering pump 56 are introduced into the common drain line 46 downstream.
  • a line 58 is branched off from the outlet line 46 upstream of the valve 54.
  • a valve 60 and a pump 62 are introduced in this line downstream.
  • the line 58 branches into two lines 64, 66, each of which comprises a valve 68 or 70.
  • Line 64 opens into a tank, not shown, which stores medium that can no longer be used and disposed of, while line 66 opens into a tank in which medium to be recycled is collected.
  • 1 further shows a line 72 which is connected on the one hand to the line 58 in the area between the valve 60 and the pump 62 and on the other hand to the cooling tank 52.
  • a valve 74 is provided to shut off the line 72. 12
  • the chemistry module 10 further comprises a control unit 80, which is connected to control the pumps 30, 36, 56 and 62 and the valves 28, 48, 50, 54, 60, 68, 70 and 74 via corresponding lines.
  • a control unit 80 which is connected to control the pumps 30, 36, 56 and 62 and the valves 28, 48, 50, 54, 60, 68, 70 and 74 via corresponding lines.
  • lines 82, 84 are shown in FIG. 1, line 82 creating a connection with pump 30 and line 84 creating a connection with valve 28.
  • the cables are designed as electrical or pneumatic cables.
  • a sensor 86 is provided, which is connected via a line 88 to the control device 80 for transmitting measured values.
  • the sensors 31a-e are also connected to the control device 80.
  • the chemistry module 10 now performs the following function:
  • the treatment basin 12 is filled with the liquid 14. This is done via line 26, valve 28 being opened and pump 30 being activated. During this process, the overflow space 22 fills first, and by activating the circulation circuit 32, the liquid 14 is then pumped into the treatment space 20. Of course, the filling is also possible in another way. As soon as a predetermined level is reached, the pump 30 is deactivated and the valve 28 is closed. By means of the heater 24, the liquid 14 present in the treatment room 20 is then brought to a predeterminable operating temperature and kept at this temperature level. 13
  • the first treatment cycle then begins with the introduction of the silicon wafer lot to be treated. After a predetermined treatment time has expired, the silicon wafer lot is transported out of the treatment pool 12.
  • the treatment of the silicon wafer lot leads to contamination of the liquid 14 present in the treatment room 20.
  • the process of the contamination of the liquid 14 is shown graphically in FIG. 2.
  • the treatment basin 12 contains a volume V max of a non-contaminated liquid 14, which therefore has a contamination level of zero. This point is marked with A in the diagram.
  • the amount of contamination increases by a value ⁇ m. This point is marked with B.
  • the amount of contamination increases slowly until it reaches a value m 2 which is marked with C.
  • This amount of contamination can be determined, for example, with the sensor 86. Alternatively, the amount of contamination can also be estimated from the number of lots treated.
  • the metering pump 56 is activated via the control device 80 after the valves 48 and 54 have been opened.
  • a quantity .DELTA.V of the liquid 14 is then withdrawn from the treatment room 20 and introduced into the cooling tank 52.
  • the amount .DELTA.V of the liquid 14 corresponds to a fraction of the total liquid 14 contained in the treatment tank 12.
  • the two valves 48, 54 are closed again. This process of withdrawing a quantity of liquid ⁇ V is shown in the diagram in FIG. 2 by connecting the two points C and 14
  • the valve 28 is then opened via the control device 80 and the metering pump 30 is activated in order to introduce a corresponding amount ⁇ V of a fresh liquid 14 into the treatment basin 12. Since the introduced liquid 14 contains no impurities, the amount of impurities m ⁇ does not change during this process. In the diagram shown in FIG. 2, this is characterized by the connecting line of the points D and E. After the total quantity V max has been reached in the treatment basin 12, the metering pump 30 is deactivated and the valve 28 is closed again.
  • This process ie the application of a certain amount .DELTA.V of the contaminated liquid 14 and the introduction of a corresponding amount of .DELTA.V of a clean liquid 14, is repeated whenever the amount of contaminants in the treatment tank 12 reaches the value m 2 . It follows from this that during operation of the chemistry module 10, the amount of impurities in the treatment tank 12 fluctuates in the range between the values m x and m 2 .
  • the circulation circuit 32 is activated, so that liquid is transported from the overflow space 22 through the pump 36 into the treatment room 20, the liquid depending on the configuration of the circulation circuit, the flow heater 38 and / or the filter 40 happens. If the amount contained in the treatment room 20 reaches a certain level, the excess liquid runs off into the overflow room 22. 15
  • the liquid contained in the cooling tank 52 is pumped via line 72 with the aid of pump 62 either via line 64 into the recycling tank or via line 66 into a disposal tank, the corresponding valves 74 and 68 and 70 being opened for this purpose become.
  • the two valves 48, 50 and the valve 60 and one of the two valves 68 and 70 are opened and the pump 62 is activated, the temperature of the liquid 14 in the treatment basin 12 having previously dropped to the required value.
  • the advantage of the previously described method is that the amount of impurities contained in the liquid 14 only fluctuates in a small range m 2 -m l , so that the treatment results also fluctuate only within a small range and are therefore reproducible.
  • the chemistry module 10 does not require a receiver tank which holds the total amount V max of the liquid 14 and preheats it to a certain value.
  • the quantity .DELTA.v is preferably set such that the sum of the quantities .DELTA.v introduced during a previously usual liquid change cycle corresponds exactly to the total quantity in the treatment room.
  • quantities ⁇ v can also be set. E.g. these can also be changed over time. Since the quantities .DELTA.v are introduced during the treatment of wafers, the operation of the system for changing the liquid no longer has to be interrupted, in contrast to previously.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un procédé permettant de remplacer un produit de traitement contenu dans un bassin de traitement (12) destiné à un traitement chimique par voie humide de tranches de silicium. A des intervalles donnés et/ou après le traitement d'un nombre donné de tranches de silicium, une quantité du produit de traitement contaminé est retirée et une quantité correspondante de produit de traitement non contaminé est introduite. La quantité (ΔV) correspond à une fraction de la quantité totale (Vmax) du produit de traitement (14) présente dans le bassin de traitement (12). L'invention concerne également une installation de traitement chimique de tranches de silicium (16) par voie humide, comprenant un bassin de traitement (12), une conduite d'alimentation de bassin (26) et une conduite de décharge de bassin (46). L'installation est caractérisée en ce qu'une pompe de dosage (30, 56) est respectivement placée dans la conduite d'alimentation de bassin (26) et dans la conduite de décharge de bassin (46) et en ce qu'un dispositif de commande (80) associé aux pompes de dosage (30, 56) permet le retrait et l'introduction du produit de traitement du/dans le bassin de traitement
EP99907575A 1998-03-02 1999-02-27 Procede permettant de remplacer un produit de traitement contenu dans un bassin de traitement et installation utilisee a cet effet Withdrawn EP1101243A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19808463 1998-03-02
DE19808463 1998-03-02
DE19815039A DE19815039A1 (de) 1998-03-02 1998-04-03 Verfahren zum Wechseln eines in einem Behandlungsbecken enthaltenen Behandlungsmediums und Anlage zur Ausführung des Verfahrens
DE19815039 1998-04-03
PCT/EP1999/001285 WO1999045574A1 (fr) 1998-03-02 1999-02-27 Procede permettant de remplacer un produit de traitement contenu dans un bassin de traitement et installation utilisee a cet effet

Publications (1)

Publication Number Publication Date
EP1101243A1 true EP1101243A1 (fr) 2001-05-23

Family

ID=26044227

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99907575A Withdrawn EP1101243A1 (fr) 1998-03-02 1999-02-27 Procede permettant de remplacer un produit de traitement contenu dans un bassin de traitement et installation utilisee a cet effet

Country Status (2)

Country Link
EP (1) EP1101243A1 (fr)
WO (1) WO1999045574A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011080105A1 (de) 2011-07-29 2013-01-31 Wacker Chemie Ag Verfahren zur Reinigung von polykristallinen Siliciumbruchstücken

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121938A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 弱流液による洗浄方法および装置
JPH0296334A (ja) * 1988-10-01 1990-04-09 Nisso Eng Kk 高温エッチング液の循環方法
JPH0799175A (ja) * 1993-06-04 1995-04-11 Nippon Steel Corp 処理液の供給方法及び供給装置
US5383574A (en) * 1993-07-19 1995-01-24 Microbar Sytems, Inc. System and method for dispensing liquid from storage containers
JPH0841658A (ja) * 1994-07-28 1996-02-13 Hitachi Ltd ウエットエッチング装置
JPH10340880A (ja) * 1997-06-06 1998-12-22 Mitsubishi Corp 半導体ウエハの洗浄処理方法及び装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9945574A1 *

Also Published As

Publication number Publication date
WO1999045574A1 (fr) 1999-09-10

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