EP1099246A1 - Procede pour produire un corps ceramique comportant un composant electronique passif integre, un tel corps et utilisation de ce corps - Google Patents

Procede pour produire un corps ceramique comportant un composant electronique passif integre, un tel corps et utilisation de ce corps

Info

Publication number
EP1099246A1
EP1099246A1 EP99945901A EP99945901A EP1099246A1 EP 1099246 A1 EP1099246 A1 EP 1099246A1 EP 99945901 A EP99945901 A EP 99945901A EP 99945901 A EP99945901 A EP 99945901A EP 1099246 A1 EP1099246 A1 EP 1099246A1
Authority
EP
European Patent Office
Prior art keywords
ceramic
temperature interval
layer
temperature
ceramic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99945901A
Other languages
German (de)
English (en)
Inventor
Silvia Gohlke
Wolfram Wersing
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1099246A1 publication Critical patent/EP1099246A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Definitions

  • the invention relates to a method for producing a ceramic body with a monolithic multilayer structure. At least one passive electronic component is integrated in the volume of the body. In addition, such a body is presented and the use of the body is indicated.
  • the electronics industry strives for the greatest possible miniaturization. This applies in particular to mobile radio technology.
  • the aim is to combine as many electronic components as possible in the smallest possible space.
  • Such components can be, for example, very complex high-frequency modules or even complete radio parts.
  • substrates in the form of ceramic bodies with a monolithic multilayer structure have proven particularly useful.
  • a passive component such as an inductor, a capacitor or a resistor in the volume of a ceramic body.
  • a number of products are manufactured in this way today. These include, for example, ceramic multichip modules (MCM-C), simple high-frequency components such as LC filters and RLC networks.
  • a special process for producing a ceramic body with a monolithic multilayer structure is based on LTCC (low temperature cofired ceramic) technology (see, for example, DL Wilcox et al., Proc. 1997 ISHM Philadelphia, pp. 17-23)
  • LTCC low temperature cofired ceramic
  • Low-sintering glass ceramic serves as the ceramic material.
  • the surface of a ceramic body obtained in the manner described is designed in such a way that active components such as SMD components or ICs (semiconductor components) can be attached as space-saving as possible.
  • Flip-chip technology is becoming increasingly important for attaching active components.
  • Prerequisite for the application of this technique is the highest precision and reproducibility of the conductor and pad structures on the surface of the body. In view of the high process reliability of this technology and the high quality of a component manufactured with it, a component tolerance of ⁇ 0.1% is necessary.
  • a much more elegant method consists of stacking the green foils in such a way that the top and bottom foils have a ceramic material whose sintering temperature is above that of the ceramic material of the foils lying between them in the stack.
  • the sintering is carried out in such a way that the ceramic material of the inner foils sintering at a lower temperature densifies, but not the material of the outer foils sintering at a higher temperature.
  • the non-compacting material prevents the lateral shrinkage of the film stack by the adhesion of the laminated films to each other.
  • the body's non-compacted ceramic material is removed after sintering. Subsequently, in additional work steps, metallizations have to be applied to the surface of the body for further processing (e.g. flip-chip technology).
  • the object of the invention is to provide a method for producing a ceramic body with a monolithic Mehr Wegauf ⁇ construction, which has a very small lateral tolerance.
  • This object is achieved by a method for producing a ceramic body which has a monolithic multilayer structure and contains at least one passive electronic component and which has the following method steps:
  • a ceramic body with a monolithic multilayer structure is distinguished by the fact that the ceramic layers of the body are firmly connected to one another and form a unit. Individual layers can also consist of a non-ceramic material (eg metal).
  • a sta- pel process subject of ceramic green sheets and metal foils a sintered ⁇ .
  • a passive electronic component is to be understood as an electrical conductor track. It can be an inductor, a capacitor or a resistor (e.g. also a varistor).
  • the components can occur individually or in combination with one another and in particular can be components of an electrical circuit.
  • a component consists, for example, of a metal, a semimetal and / or a solid electrolyte.
  • the basic idea of the invention is to use a multi-stage sintering process for producing a ceramic body.
  • the procedure described in the introduction to avoid lateral shrinkage is modified.
  • no ceramic layer is removed after sintering. Rather, a component is integrated in each layer.
  • each ceramic layer is used to build up a body with a more or less large number of electronic components.
  • the ceramic materials e.g. with different dielectric constants
  • additional process steps for removing ceramic material and possibly attaching conductor or pad structures to the surface of the body are eliminated.
  • a ceramic green sheet is produced in a known manner.
  • the thickness of a green sheet comprises, for example, 50 ⁇ m to 200 ⁇ m.
  • Low-sintering glass ceramic is preferred as the ceramic material.
  • the ceramic material which is also called glass-ceramic composite, contains, for example, aluminum oxide, boron oxide or alkaline earth oxide.
  • the green film is cut to the desired shape by cutting or punching. This can for example, the lateral shape of the ceramic body.
  • the structuring of the green film is also part of the production of a ceramic green film.
  • a green sheet for example, at least one opening for an electrical via (viahole) passing through the green sheet is produced. This is particularly easy to do by punching.
  • Another method of structuring a green sheet such as photolithography or creating an opening with the aid of laser radiation, can also be used.
  • a perforated structure in the use (multi-up) of a green sheet, with the aid of which a number of partial areas of the green sheet can be separated from one another.
  • use is understood to mean a two-dimensional body which has several identically structured partial areas.
  • the area of a panel is, for example, 300 x 300 cm.
  • At least one metallization is applied to a surface of a green sheet.
  • electrically conductive material for example in the form of a conductor structure, is preferably applied to a surface of the green film using the screen printing method. A very fine conductor structure can be produced in this way.
  • the width of a conductor track is, for example, 80 ⁇ m and the distance from conductor track to conductor track is likewise 80 ⁇ m.
  • the openings for the plated-through holes are also filled with an electrically conductive material.
  • the stencil printing process is particularly suitable. Screen printing and stencil printing are preferably carried out in the same device.
  • a metal paste is processed for a conductor structure and an electrical via.
  • a resistor can be integrated particularly easily by processing a sinterable resistor paste.
  • a low-sintering glass ceramic particularly highly conductive silver or copper can be processed.
  • a thick-film technology e.g. screen printing technology
  • the ceramic green foils are stacked on top of one another. Green foils containing various ceramic materials are used.
  • the selection of the ceramic material of a green sheet is based on the function that is to be integrated into the substrate using this green sheet.
  • the sintering properties of the ceramic materials of the various green foils are of crucial importance. At least two materials must be used that differ from one another at least in the temperature interval required for compression.
  • the first temperature interval and the temperature interval different from the first are preferably separated. There is no temperature range in which the first ceramic material and the ceramic material different from the first compact simultaneously. This allows a multi-stage sintering process to be designed so that the shrinkage of a first one Is ceramic material already completed before the oscillations ⁇ dung of a second ceramic material used.
  • the selection of a ceramic material is tailored to the metal or metals used. If, for example, highly conductive copper is worked into the body, the compaction of the ceramic material must be completed at 950 ° C. The limit for silver is 900 ° C. When using copper, it must also be ensured that the ceramic material can be compacted under reducing conditions.
  • the body made of different materials is free from mechanical stress after sintering and does not bend, for example after cooling. It is also important that no undesirable temperature-related stress occurs during operation of the body. It is therefore advantageous if a plurality of ceramic materials have an essentially identical coefficient of thermal expansion in a certain temperature range. This means that, at least in the temperature ranges mentioned, a mechanical stress due to a different thermal expansion of the different materials is suppressed to such an extent that the functionality of the ceramic body is retained.
  • the thermal expansion coefficient of a glass ceramic can be regulated by the type and amount of a glass component.
  • the thermal expansion behavior of the different ceramic materials can be be coordinated.
  • the thermal expansion coefficient of a ceramic material at the operating temperature of the body is around 6-7 ppm / K.
  • a semiconductor material such as silicon or gallium arsenide.
  • An active electronic component eg integrated circuit
  • An electrical component with the specified specification can be used in a wide temperature range. This is important, for example, with regard to an application of the electrical component in the automotive sector.
  • a conventional polymeric substrate shows a significantly different thermal expansion behavior than a silicon IC.
  • a comparable polymeric substrate is therefore subject to tighter limits than a ceramic substrate.
  • the green foils are preferably stacked in such a way that an approximately symmetrical foil stack with a plane of symmetry parallel to the foils results with respect to the different ceramic materials. This measure promotes uniform shrinkage during the sintering process and reduces the component tolerance.
  • At least one layer which consists of an electrode material, is preferably arranged in the stack of green foils.
  • This layer can be a structured metal foil, for example.
  • the use of a metal foil is possible because there is no lateral shrinkage in such a foil occurs.
  • a metal foil has the advantage that it has a lower electrical resistance compared to a metal paste (factor 2-3).
  • a metal foil is structured, for example, by stamping and / or etching.
  • the composite is debindered together. This is done, for example, by slowly increasing the temperature to 500 ° C.
  • the lamination is carried out, for example, under a uniaxial or isostatic pressure.
  • the composite is sintered in at least two stages.
  • a second ceramic material that does not compact at this temperature prevents the lateral shrinkage due to the adhesion of the laminated foils to one another. There is only a compression perpendicular to the film planes.
  • the temperature is raised to the sintering temperature of the second ceramic material.
  • the first ceramic material which no longer compresses, in turn prevents the lateral shrinkage of the second ceramic material. This makes it possible to decouple the different compression processes of the different materials by compressing them in the thickness direction of a film.
  • the quantity ratio between sintering and non-sintering material plays a role in the suppression of the lateral garbage. Conveniently, this ratio is less than or equal to four.
  • At least one further green film can be processed, which has a further ceramic material in which the compression takes place in a temperature interval, that differs from the first and second temperature interval. It may well be that this tempera ⁇ turintervall overlap with the first and / or the second temperature interval. It is crucial that the stacking is carried out in such a way that the lateral shrinkage of the composite is suppressed in each phase of the sintering by non-sintering ceramic layers.
  • the method is particularly suitable for firmly connecting the ceramic body to a carrier, for example a metal body.
  • a carrier for example a metal body.
  • the green foils are preferably sintered directly onto a carrier in the multi-stage sintering process.
  • the carrier can be a metal body which, for example, functions as a heat sink when the ceramic body is in operation.
  • the stacking, laminating, debinding and / or sintering is preferably carried out in a die with the external dimensions of the body or the panel from which several bodies are made.
  • the die is made of a material that has very good thermal conductivity and at the same time has low adhesion to the ceramic body.
  • the material of the die preferably comprises silicon carbide.
  • the bodies are separated after sintering. This can be done by sawing. The separation is particularly easy when a body is broken out of a panel along a hole structure described above. Breaking out is also possible if a metal foil is processed in the panel.
  • the metal foil is also provided with a perforated structure before stacking on top of one another. This hole structure is laterally offset from the hole structure of a ceramic green sheet, so that when stacked one on top of the other, a metal web, which is located between two holes in a metal sheet, and a hole in a green sheet. come to rest. This metal web can be removed, for example, by etching after sintering.
  • a mixture of hydrogen peroxide and ammonia can be used to etch away a metal bar. In this way, only ceramic webs remain in the body, which can easily be broken to separate a body. This procedure is not only suitable for simplifying the separation of a finished ceramic body. Because an existing metal web of a metal foil is removed after sintering, a functional integrated passive component may be created.
  • the invention covers a new type of ceramic body, which has a monolithic multilayer structure, comprising at least one passive electronic component, at least one layer made of a ceramic material that compresses in a first temperature interval and at least one layer made of ceramic material that m in one of the first temperature interval different temperature interval compressed.
  • the ceramic body for example, there is a passive electronic component in the form of an inductor and a capacitor with a low value. Above all, a compact one
  • Decoupling capacitor with a capacitance value between 30 pF and 3 nF can be realized.
  • Compact line structures such as strip-lmes or tri-plates with high quality for a resonator, coupler and bandpass filter also pay extra.
  • An additional example is an inductor and a transformer with a high inductance value.
  • a varistor can also be contained in the ceramic body.
  • the ceramic body has in particular at least one electrical via. Such a via can extend over several adjacent layers and can be part of a complex integrated circuit.
  • an electrical connection point on the body surface for example in the form of a solder pad, is connected to a component in the interior of the body via plated-through holes.
  • the body has at least one layer made of an electrode material.
  • This layer is structured according to the functions associated with it and is in particular a component of a passive component.
  • a plate electrode for a capacitor can be realized in this way.
  • the body can be arranged on a metal body that functions, for example, as a heat sink.
  • the body can be glued or soldered onto the heat sink. It is particularly advantageous if the body is connected monolithically (for example by a sintering process) to the heat sink.
  • the material of a passive electronic component, a layer of electrode material and / or a metal body comprises at least one material which is selected from the group gold, copper, molybdenum, palladium, platinum, silver and / or tungsten. It is particularly advantageous if the material consists of highly conductive gold, silver or copper. Alloys of the metals such as silver / palladium are also conceivable. In addition, a semiconductor and resistance material can be integrated.
  • Low-sintering glass ceramic is particularly suitable as the ceramic material.
  • the glass ceramic of a layer can be in Form a two-phase glass matrix (glass phase and ceramic) or a crystalline glass ceramic matrix.
  • the ceramic material of a layer depends on the function that is integrated with this layer in the ceramic body.
  • this layer preferably consists of a material with the lowest possible dielectric constant (6 ⁇ r ⁇ 8). This reduces the signal transit time through the supply line or avoids signal delay.
  • a capacitor with a low capacitance (down to 10 pF) and an inductance (down to 10 nH) can be integrated.
  • Such a component is suitable due to its compact structure up to frequencies of a few GHz.
  • An average dielectric constant (25 ⁇ r ⁇ 60) is advantageous for layers with the aid of which a microwave resonator or filter structure is realized (for example ⁇ / 4 resonator).
  • a dielectric with a relatively high dielectric constant is advantageous for a decoupling capacitor ( ⁇ L > 500).
  • Layer stacks with a first layer sequence and a second layer stack with an opposite layer sequence to the first layer sequence are arranged one above the other. This results in an approximately symmetrical body with respect to the ceramic layers with a plane of symmetry parallel to the layers.
  • An additional layer can be arranged between the two layer stacks.
  • the body is particularly suitable as a substrate for one small, complex electronic component (e.g. a high-frequency module).
  • the invention has the following significant advantages with regard to the ceramic body, which has a monolithic multilayer structure, and the method for producing the body:
  • a multi-stage sintering process succeeds in suppressing the lateral shrinkage of the composite of the green ceramic foils. This results in a very low component tolerance of up to 0.1%.
  • thermomechanically optimal layer structure made of low and high sintering ceramic can be achieved taking into account the electrical and circuitry requirements.
  • a high level of robustness and product reliability can be achieved by reducing the necessary solder contacts between the passive components of a circuit and hermetically protecting the internal circuit.
  • the method is particularly suitable for producing a ceramic body in use (multi-up). Both relatively simple and very complex bodies can be produced inexpensively. • In addition, there is a high level of environmental compatibility due to the simple recyclability of a ceramic circuit carrier.
  • a ceramic body with a monolithic multilayer structure which has at least one passive electronic component, and a method for its production are presented.
  • the figures are schematic and do not represent true-to-scale illustrations of the objects identified.
  • FIG. 1 shows a ceramic body in cross section.
  • FIG. 2 shows the dependence of the shrinkage of the ceramic materials that make up the ceramic body on the temperature.
  • Figure 3 shows the temperature program with which the ceramic body is sintered after debinding.
  • FIG. 4 shows the effect of the temperature increase on the ceramic body.
  • Figure 5 shows, starting from the production of a green sheet, the essential process steps for the production of the ceramic body.
  • Figure 6 shows a ceramic green sheet with a perforated structure.
  • FIG. 7 shows a section of a sintered benefit in which a ceramic layer and a layer of electrode material are arranged one above the other before an etching process.
  • FIG. 8 shows a section of a sintered benefit in which a ceramic layer and a layer of electrode material are arranged one above the other after an etching process.
  • the subject matter is a four-layer ceramic microwave module 1 which has a monolithic multilayer structure.
  • Each ceramic layer is approximately 100 ⁇ m thick.
  • the two inner layers 11 and 12 consist of a glass ceramic 101 with a dielectric constant of approximately 80.
  • ⁇ s has a material of the composition Ba 6 - ⁇ Me8 +2 Tii8 ⁇ 5 (0 ⁇ x ⁇ 1).
  • Me stands for the rare earths Sm, Nd and La.
  • the densification of the ceramic material of these layers takes place between approximately 870 ° C and 970 ° C.
  • the two outer ceramic layers 13 and 14 have a glass ceramic 102 with a dielectric constant of approximately 6. This material ba- based on a barium aluminum silicate glass and densifies between 720 and 850 ° C.
  • FIG. 2 shows the shrinkage of the ceramic materials 101 and 102 in the form of a relative change in length in a direction ⁇ L / L as a function of the temperature.
  • the body 1 is constructed from two layer stacks 111 and 112.
  • the layer stack 111 has a layer sequence in the direction 113.
  • the layer stack 112 has the same layer sequence in the opposite direction 114.
  • There is a body 1 which is approximately symmetrical with respect to the two ceramic materials 101 and 102 and has a plane of symmetry which is virtually between the layers 11 and 12 and is parallel to these layers.
  • Passive electronic components 15-20 are located on the top and bottom and in the volume of the body.
  • the material of the components comprises copper.
  • solder pads 17 are attached next to a conductor track, with the aid of which an SMD component and an IC can be connected to the body.
  • solder pads 18 are also on the underside for soldering the body onto a printed circuit board.
  • Plate electrodes for capacitors and inner conductor structures for tri-plate resonators are located between the inner layers. These components are formed using a structured layer of electrode material 20. The counter electrodes to the capacitors and resonators are located between the inner and outer layers. In addition, the body 1 has an electrical contact 19.
  • a four-layer ceramic microwave module 1 described above is produced in the panel.
  • the essential method steps are visible on the basis of FIG.
  • a ceramic green sheet containing an organic binder is produced (process 501).
  • the ceramic starting material made of glass ceramic with the desired composition is produced, for example, in the mixed oxide or sol-gel process.
  • a slip is made from the starting material, from which the green sheet is pulled or poured.
  • the green foils After drying, the green foils have a layer thickness of 150 ⁇ m.
  • n x n benefit 61 this means that n x n identical hole combinations are generated in the green sheet.
  • a hole combination contains, for example, openings 63 with which through contacts 19 are produced. The hole combinations are separated from one another by the hole structure 62 (FIG. 6).
  • electrically conductive material is printed on the green film 61 using the screen printing method.
  • a copper-containing paste is used for this.
  • Conductor tracks of 80 ⁇ m and plate electrodes are applied.
  • openings 63 for an electrical via 19 are filled with electrically conductive material using the stencil printing method. Stencil and screen printing are carried out with the same device.
  • a structured metal foil 20 made of copper is arranged between the layers 12 and 13. Under a uniaxial pressure, the stacked green sheets are laminated to a composite 51.
  • the binder 51 is freed of the binder 51 by slowly increasing the temperature, for example 2K / min (FIGS. 5, 505). After the debinding, the sintering takes place in two stages (FIGS. 3 and 4). First the temperature is increased to 820 ° C (506). At this temperature, the ceramic material 102 of the outer layers 13 and 14 of the composite compresses. The temperature is maintained until the compaction of this ceramic material is complete.
  • the temperature is raised to 950 ° C. and held until the ceramic material 101 of the inner layers 11 and 12 is compressed.
  • the die is made of silicon carbide.
  • the microwave modules can be separated by breaking apart the panel along the hole structure 62 and can thus be used for further processing.
  • a correspondingly structured metal foil 72 is used in the production of the ceramic body.
  • the structuring or the creation of openings is done by punching.
  • a hole structure 73 is produced in the metal foil 72, which simplifies the separation of a finished ceramic body.
  • the hole structure 73 is laterally offset from the hole structure 75 of a ceramic green sheet 74, so that when the sheets are stacked above one another, a metal web 76, which is located between two holes 77 and 78 of a metal sheet 72, and a hole 79 of a green sheet 74 come to lie one above the other.
  • FIG. 7 shows a section of a sintered panel 71, which emerges from the metal foil 72 and green foil 74 stacked one above the other.
  • the figure shows the benefit 71 before an etching process.
  • the perforated structure 73 is shown in dotted lines.
  • FIG. 8 shows the benefit 81 which is obtained from the benefit 71 by an etching process.
  • the further processing of a microwave module which includes, for example, the production of conductor structures and solder pads and, in the further course, the attachment of SMD components and ICs using flip-chip technology on the surface of the module, can also be carried out in the utility before being separated.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

Selon l'invention, un corps céramique présentant une structure stratifiée monolithique est produit selon un procédé de frittage à plusieurs étapes. Pour qu'il n'y ait pas de retrait latéral, le corps est constitué de film vert dont le matériau est comprimé à des intervalles de température différents. On obtient ainsi un corps avec une très étroite tolérance de composant. Dans le volume de ce corps peuvent être intégrés plusieurs composants électroniques passifs différents. Un tel corps est utilisé, par exemple, comme substrat d'un module à hyperfréquences.
EP99945901A 1998-07-15 1999-07-02 Procede pour produire un corps ceramique comportant un composant electronique passif integre, un tel corps et utilisation de ce corps Withdrawn EP1099246A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19831821 1998-07-15
DE19831821 1998-07-15
PCT/DE1999/002060 WO2000004577A1 (fr) 1998-07-15 1999-07-02 Procede pour produire un corps ceramique comportant un composant electronique passif integre, un tel corps et utilisation de ce corps

Publications (1)

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EP1099246A1 true EP1099246A1 (fr) 2001-05-16

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EP (1) EP1099246A1 (fr)
JP (1) JP2002520878A (fr)
WO (1) WO2000004577A1 (fr)

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