EP1093132A3 - Planarer Abgleichwiderstand, Anwendungen und Verfahren zu seiner Herstellung - Google Patents

Planarer Abgleichwiderstand, Anwendungen und Verfahren zu seiner Herstellung Download PDF

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Publication number
EP1093132A3
EP1093132A3 EP00115803A EP00115803A EP1093132A3 EP 1093132 A3 EP1093132 A3 EP 1093132A3 EP 00115803 A EP00115803 A EP 00115803A EP 00115803 A EP00115803 A EP 00115803A EP 1093132 A3 EP1093132 A3 EP 1093132A3
Authority
EP
European Patent Office
Prior art keywords
application
planer
manufacturing process
trimming resistor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00115803A
Other languages
English (en)
French (fr)
Other versions
EP1093132B1 (de
EP1093132A2 (de
Inventor
Walter Emili
Herbert Goebel
Harald Wanka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1093132A2 publication Critical patent/EP1093132A2/de
Publication of EP1093132A3 publication Critical patent/EP1093132A3/de
Application granted granted Critical
Publication of EP1093132B1 publication Critical patent/EP1093132B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/22—Elongated resistive element being bent or curved, e.g. sinusoidal, helical

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

Ein Abgleichwiderstand wird hergestellt durch Abscheiden einer Widerstandsschicht (3) auf einem Substrat (1), einer Passivierungsschicht (5) mit Fenstern (4) und einer Kontaktschicht (6), die mit der Widerstandsschicht (3) durch die Fenster (4) in Kontakt steht. Ein Abgleich erfolgt durch Unterbrechen der Kontaktschicht (6) an Engstellen (7). Anwendung für die Herstellung von Hochdrucksensoren.
EP00115803A 1999-10-15 2000-07-22 Planarer Abgleichwiderstand, Anwendungen und Verfahren zu seiner Herstellung Expired - Lifetime EP1093132B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19949607A DE19949607A1 (de) 1999-10-15 1999-10-15 Planarer Abgleichwiderstand, Anwendungen und Verfahren zu seiner Herstellung
DE19949607 1999-10-15

Publications (3)

Publication Number Publication Date
EP1093132A2 EP1093132A2 (de) 2001-04-18
EP1093132A3 true EP1093132A3 (de) 2004-06-02
EP1093132B1 EP1093132B1 (de) 2005-12-28

Family

ID=7925674

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00115803A Expired - Lifetime EP1093132B1 (de) 1999-10-15 2000-07-22 Planarer Abgleichwiderstand, Anwendungen und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
US (1) US6667683B1 (de)
EP (1) EP1093132B1 (de)
DE (2) DE19949607A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6647614B1 (en) * 2000-10-20 2003-11-18 International Business Machines Corporation Method for changing an electrical resistance of a resistor
DE60222162T2 (de) * 2001-09-10 2008-06-12 Microbridge Technologies Inc., Montreal Verfahren zum effektiven trimmen von widerständen durch wärmepulse
JP3915586B2 (ja) * 2002-04-24 2007-05-16 株式会社デンソー 力学量検出装置の製造方法
US20060039419A1 (en) * 2004-08-16 2006-02-23 Tan Deshi Method and apparatus for laser trimming of resistors using ultrafast laser pulse from ultrafast laser oscillator operating in picosecond and femtosecond pulse widths
US7598841B2 (en) 2005-09-20 2009-10-06 Analog Devices, Inc. Film resistor and a method for forming and trimming a film resistor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2039920A1 (de) * 1970-08-11 1972-02-17 Siemens Ag Verfahren zum nachtraeglichen Erniedrigen der Widerstandswerte von Duennschichtwiderstaenden
US3996551A (en) * 1975-10-20 1976-12-07 The United States Of America As Represented By The Secretary Of The Navy Chromium-silicon oxide thin film resistors
EP0325234A2 (de) * 1988-01-20 1989-07-26 Kabushiki Kaisha Toshiba Anpassungselement für mikroelektronische Schaltungen
DE3919059A1 (de) * 1989-06-10 1991-01-03 Bosch Gmbh Robert Drucksensor zum erfassen von druckschwankungen einer druckquelle
JPH0677021A (ja) * 1992-08-27 1994-03-18 Murata Mfg Co Ltd 抵抗体の抵抗値調整方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150366A (en) * 1976-09-01 1979-04-17 Motorola, Inc. Trim network for monolithic circuits and use in trimming a d/a converter
US4200970A (en) * 1977-04-14 1980-05-06 Milton Schonberger Method of adjusting resistance of a thermistor
US4201970A (en) * 1978-08-07 1980-05-06 Rca Corporation Method and apparatus for trimming resistors
US4586988A (en) * 1983-08-19 1986-05-06 Energy Conversion Devices, Inc. Method of forming an electrically conductive member
US5363084A (en) * 1993-02-26 1994-11-08 Lake Shore Cryotronics, Inc. Film resistors having trimmable electrodes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2039920A1 (de) * 1970-08-11 1972-02-17 Siemens Ag Verfahren zum nachtraeglichen Erniedrigen der Widerstandswerte von Duennschichtwiderstaenden
US3996551A (en) * 1975-10-20 1976-12-07 The United States Of America As Represented By The Secretary Of The Navy Chromium-silicon oxide thin film resistors
EP0325234A2 (de) * 1988-01-20 1989-07-26 Kabushiki Kaisha Toshiba Anpassungselement für mikroelektronische Schaltungen
DE3919059A1 (de) * 1989-06-10 1991-01-03 Bosch Gmbh Robert Drucksensor zum erfassen von druckschwankungen einer druckquelle
JPH0677021A (ja) * 1992-08-27 1994-03-18 Murata Mfg Co Ltd 抵抗体の抵抗値調整方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 324 (E - 1564) 20 June 1994 (1994-06-20) *

Also Published As

Publication number Publication date
EP1093132B1 (de) 2005-12-28
US6667683B1 (en) 2003-12-23
DE19949607A1 (de) 2001-04-19
DE50011959D1 (de) 2006-02-02
EP1093132A2 (de) 2001-04-18

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