EP1029371A1 - Structure comportant un materiau supraconducteur a haute temperature de transition, et procede de production de cette structure - Google Patents

Structure comportant un materiau supraconducteur a haute temperature de transition, et procede de production de cette structure

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Publication number
EP1029371A1
EP1029371A1 EP98959754A EP98959754A EP1029371A1 EP 1029371 A1 EP1029371 A1 EP 1029371A1 EP 98959754 A EP98959754 A EP 98959754A EP 98959754 A EP98959754 A EP 98959754A EP 1029371 A1 EP1029371 A1 EP 1029371A1
Authority
EP
European Patent Office
Prior art keywords
substrate
structure according
ceramic
layer
superconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98959754A
Other languages
German (de)
English (en)
Inventor
Rainer Nies
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1029371A1 publication Critical patent/EP1029371A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/30—Devices switchable between superconducting and normal states

Definitions

  • the invention relates to a structure with metal-oxide high-T c superconductor material which has at least the following parts: a substrate made of an electrically insulating material, the thermal expansion coefficient of which is matched to that of the superconductor material, one on the
  • the invention further relates to a method for producing a corresponding superconductor structure. Such a structure and a corresponding manufacturing process are evident from EP 0 312 015 B.
  • Superconducting metal oxide compounds with high transition temperatures T c of over 77 K are known, which are therefore also referred to as high-T c superconductor materials or HTS materials and in particular allow an LN 2 cooling technology.
  • Such metal oxide compounds include, in particular, cuprates of special material systems such as, for example, the types Y-Ba-Cu-0 or Bi-Sr-Ca-Cu-O, where the Bi component can be partially substituted by Pb.
  • Several superconducting high T c phases can occur within individual material systems, which differ in the number of copper-oxygen network planes or layers within the crystalline unit cell and which have different transition temperatures.
  • HTS materials are attempted to be deposited on different substrates for different purposes, generally after superposed as pure as possible.
  • conductor material is sought.
  • metallic substrates are particularly provided for conductor applications.
  • the EP-B document mentioned at the outset shows an oxidic, superconducting shaped body with a substrate made of a polycrystalline metal or ceramic, the substrate material having a thermal expansion coefficient (expansion coefficient) between 5 * 10 "6 / ° C
  • the substrate with respect to its expansion behavior is that of the HTS material at least largely adapted.
  • the substrate of the known shaped body is also covered with a noble metal layer, for example made of Au or Ag, which serves as a base for a buffer layer.
  • This buffer layer consists of an inorganic material with a predetermined crystal structure and enables a textured growth of the HTS material during a deposition process. Because of the noble metal layer on the substrate, the known shaped body cannot readily be provided for a current limiter device.
  • DE 195 20 205 A generally shows the use of electrically insulating substrates made of glass material as carriers for conductor tracks made of HTS material in current limiting devices.
  • a suitable one will also be used there Buffer layer applied to the surface of the substrate to be coated with the HTS material.
  • a further structure with a glass substrate as a carrier for an HTS layer can be found in the literature reference "Physica C", vol. 261, 1996, pages 355 to 360.
  • YBa 2 Cu 3 0 7 - x different glass substrates are selected from materials whose coefficient of thermal expansion ⁇ was at most 4.6 • 10 "6 ° C -1 .
  • the substrates also each had a very small surface to be coated, which was covered with oriented, Y-stabilized Zr0 2 . It turns out, however, that critical current densities J c can only be achieved in the order of 10 "A / cm 2 (in the zero field) with the known structure. Such current densities are considered too low for many applications.
  • the object of the present invention is to design the superconductor structure with the features mentioned at the outset and the method for its production in such a way that comparatively higher critical current densities can be obtained than according to the aforementioned literature reference.
  • Technical production, in particular using commercially available glass material, is to be made possible in order to open up a use in large-area current limiting devices.
  • the intermediate layer should consist of a glass material which is sufficiently temperature-resistant with respect to the maximum temperature occurring during the manufacture of the structure, the coefficient of thermal expansion of which is greater than 6 * 10 ⁇ 6 K "1 , and the intermediate layer is to be a composite body with the substrate form.
  • the invention is based on the finding that the (linear) thermal expansion coefficient of the glass material together with the transformation temperature which is characteristic of it and which is important in view of the maximum temperature required for the deposition or formation of the superconductor material is the decisive variable with regard to is a high critical current density J c .
  • Glass materials according to the invention which are suitable for the intermediate layer are relatively inexpensive, so that they can be provided, in particular for large-area substrates with a coatable area of at least 10 cm 2 , preferably over 100 cm 2 , in particular for current limiting devices are can be used. In such devices, a total area of HTS material of more than 2 m 2 is required for a power to be limited of, for example, about 10 MVA.
  • the intermediate layer made of the predetermined glass material can either be formed by a glaze deposited on the substrate. Or a plate or disk made of a corresponding flat glass is connected to the substrate, in particular glued.
  • At least one deposition process for the material of the buffer layer and / or the superconductor layer is advantageously chosen for the production of a corresponding structure, in which the maximum temperature at the substrate is kept at most 150 K higher, preferably at most 100 K higher than the transformation temperature of the glass material. In this way, undesired softening and expansion of the glass material can be advantageously avoided, especially when using large-area intermediate layers.
  • the single figure shows schematically a cross section through a superconductor structure according to the invention.
  • the superconductor structure according to the invention can be provided particularly advantageously for devices in which large surfaces of preferably at least 10 cm 2 , in particular over 100 cm 2 , are to be provided with an HTS material.
  • a corresponding device is, for example, a short-circuit current limiter device with a planar conductor configuration, the basic embodiment of which is generally known (see, for example, DE 195 20 205 A or EP 0 523 314 A). Current limiter devices of this type require surfaces of up to more than 2000 cm 2 .
  • the use of special glasses as a large surface for a HTS material then enables the corresponding superconductor structure to be manufactured in a relatively simple and inexpensive manner.
  • the glass material, together with the substrate consisting of electrically insulating material ensures a sufficient dielectric strength of the structure, in particular as part of a current limiter device.
  • the structure generally designated 2
  • the structure comprises a composite body 3 made of a substrate 4 and an intermediate glass layer 5 arranged thereon.
  • At least one buffer layer 6 is deposited on this intermediate layer, which serves as a base for a layer 7 made of an HTS material.
  • the HTS layer 7 can optionally be structured. It can also be combined with at least one additional layer, e.g. a protective layer or a layer 8 serving as a shunt resistor.
  • a shunt resistance layer is particularly advantageous for current limiter applications.
  • a plate made of an electrically insulating material with a thickness D and the required dimensions of the surface is advantageously chosen whose linear thermal expansion coefficient ⁇ is matched to that of a HTS material selected for the superconductor structure 2. Since the known HTS materials generally have thermal expansion coefficients ⁇ in the order of about 10 • 10 "6 K " 1 over a customary measuring range from 20 ° C. to 300 ° C., a substrate material with a thermal expansion coefficient ⁇ of more than 6 is advantageous • 10 ⁇ 6 K "1 , preferably over 7 • 10 ⁇ 6 K " 1 , selected.
  • Suitable materials are therefore in particular ceramics in the form of oxides, borides, nitrides or silicides, for example glass ceramics.
  • Mixed ceramics made from at least two of the ceramic types mentioned can also be used.
  • ⁇ is about 7.5 • 10 "6 K " 1 for A1 2 0 3 and about 11 • 10 "6 K " 1 for Zr0 2 .
  • a glass ceramic from Corning GmbH, Wiesbaden (DE), with the brand name "Macor” has an ⁇ of approximately 9.3 • 10 "6 K " 1.
  • a sol - Ches selected material that has a relatively high thermal conductivity ⁇ 7 7 ⁇ (at 77 K) of at least 10 W / mK (watts per meter times Kelvin), preferably of over 50 W / mK.
  • ⁇ 7 7 ⁇ at 77 K
  • W / mK watts per meter times Kelvin
  • A1 2 0 3 is Particularly suitable to look at, since its ⁇ 7 7 K is around 150 W / mK.
  • the substrate material should be sufficiently temperature-resistant so that not only can it withstand the temperatures that occur during the deposition and formation of the superconductor material, but also that for a possible coating with a Glaze from the glass material has to withstand the high temperatures of generally over 1000 ° C undamaged.
  • a large flat side of the substrate 4 with an intermediate layer 5 is then used to form the composite body 3 made of a special glass material with a thickness d : Because of the relatively low thermal conductivity of the glass material, in cases where good heat transfer to the substrate is important, such as in the case of a current limiter device, a small thickness di of preferably at most 0.5 mm is provided.
  • a glaze made of fused glass material using known glazing processes. Instead, however, it is also possible to use a thin, for example 500 ⁇ m thick pane made of a corresponding flat glass, which is then attached to the substrate surface, in particular by gluing.
  • Adhesives suitable for this purpose are, in particular, those which do not secrete any substances when the substrate is heated during the deposition of the buffer layer material and the HTS material.
  • Known ceramic-based adhesives are therefore advantageous.
  • the flat glass pane can preferably be pulled out of the melt and, if appropriate, subsequently thermally leveled. In thermal leveling, small waves and other bumps are smoothed out by heating the surface.
  • the fused surface of the two aforementioned embodiments of the intermediate layer 5 then has a microroughness which is sufficiently low for the subsequent coating processes.
  • the roughness determined by the maximum roughness depth R t should advantageously be less than 50 nm, preferably less than 20 nm, based on a measuring path of 500 ⁇ m.
  • the size R t is understood within the predetermined distance to be the distance formed between an upper boundary line touching the surface profile at its highest profile elevation and a lower boundary line parallel to it and touching the surface profile at its deepest profile valley (see also draft 1918 of DIN 4162). A larger ripple of the surface on the millimeter scale generally does not interfere.
  • a glass material should be selected for the intermediate layer 5 which, on the one hand, has a sufficiently high transformation temperature in relation to the maximum temperature (on the substrate) which occurs in the subsequent deposition processes. The transformation temperature should only be at most 150 ° C below this maximum temperature.
  • the glass material should have a linear thermal expansion coefficient ⁇ in a customary temperature range of 20 ° to 300 ° C, which is greater than
  • the at least one buffer layer must consist of a material that guarantees such growth.
  • a layer 6 with a texture adapted to the crystalline dimensions of the HTS material is therefore particularly suitable.
  • Biaxially textured, yttrium-stabilized zirconium oxide (abbreviation: "YSZ”) is advantageous.
  • buffer Layer materials such as Ce0 2 , YSZ + Ce0 2 (as a double layer), Pr 6 O n , MgO, YSZ + tin-doped In 2 0 3 (as a double layer), SrTi0 3 or La ⁇ _ x Ca x Mn0 3 are suitable.
  • One or more of these materials is deposited on the surface of the intermediate layer 5 in a manner known per se.
  • a so-called IBAD method Ion Beam Assisted Deposition method
  • other methods are also suitable, such as sputtering or laser ablation at a predetermined angle.
  • the deposition of the buffer layer material takes place at temperatures on the substrate or on the composite body which are below the maximum temperature occurring during the production of the superconductor material.
  • the maximum temperature during the buffer layer deposition should exceed the transformation temperature of the glass material by at most 150 ° C., preferably by at most 100 ° C.
  • the layer thickness d 2 of the textured buffer layer 6 thus produced is generally between 0.1 and 2 ⁇ m.
  • the HTS material is then applied to the buffer layer 6 with the aid of known deposition processes while heating the substrate with a thickness d 3 , generally up to a few micrometers.
  • a method is advantageously selected which requires a maximum temperature for the deposition and formation of the HTS material which is at most 150 ° C. higher, preferably at most 100 ° C. higher than the transformation temperature of the selected glass material.
  • the latter method can advantageously be carried out at relatively low substrate temperatures of approximately 650 ° C.
  • CVD Chemical Vapor Deposi- tion
  • organometallic starting materials are suitable.
  • TlBa 2 Ca 2 Cu 3 0 9 come as HTS materials + x , HgBa 2 CaCu 2 0 6 + x , Bi 2 Sr 2 CaCu 2 0 8 - x or (Bi, Pb) 2 Cr 2 Ca 2 Cu 3 0n- x in question.
  • the thickness di of the intermediate layer formed in this way was about 0.2 mm.
  • the smooth glass surface was first applied a biaxially textured buffer layer 6 made of YSZ with a thickness d 2 of about 1 ⁇ m was applied by means of an IBAD method, and then an HTS layer 7 made of YBa 2 Cu 3 0 7. x with a thickness d 3 of about 1 ⁇ m by thermal co-evaporation of the components of the material with the addition of oxygen at a substrate temperature of 620 ° to 650 ° C. using a known coating apparatus mm thick Au shunt resistance layer 8.
  • the HTS layer of structure 2 then had a critical current density J c (in the zero field, at 77 K, with 0.1 ⁇ V / cm as characteristic d critical current I c ) of more than 5 ⁇ 10 5 A / cm 2 .

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Surface Treatment Of Glass (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

L'invention concerne une structure supraconductrice (2) qui comprend un corps composite (3) constitué d'un substrat électro-isolant (4) sur lequel se trouvent une couche intermédiaire (5), une couche tampon (6) déposée sur cette couche intermédiaire, ainsi qu'une couche (7) constituée d'un matériau supraconducteur à haute température de transition, à oxyde métallique, déposée sur ladite couche tampon. Selon l'invention, la couche intermédiaire (5) doit être constituée d'un verre dont le coefficient de dilatation thermique est supérieur à 6 . 10-6 K-1. Pour produire ladite structure, on sélectionne au moins un procédé de dépôt avec lequel la température maximale est, au maximum, supérieure de 150 K à la température de transformation du verre.
EP98959754A 1997-11-04 1998-10-22 Structure comportant un materiau supraconducteur a haute temperature de transition, et procede de production de cette structure Withdrawn EP1029371A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19748483 1997-11-04
DE19748483A DE19748483C1 (de) 1997-11-04 1997-11-04 Aufbau mit Hoch-T¶c¶-Supraleitermaterial, Verfahren zur Herstellung und Verwendung des Aufbaus
PCT/DE1998/003107 WO1999023707A1 (fr) 1997-11-04 1998-10-22 Structure comportant un materiau supraconducteur a haute temperature de transition, et procede de production de cette structure

Publications (1)

Publication Number Publication Date
EP1029371A1 true EP1029371A1 (fr) 2000-08-23

Family

ID=7847439

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98959754A Withdrawn EP1029371A1 (fr) 1997-11-04 1998-10-22 Structure comportant un materiau supraconducteur a haute temperature de transition, et procede de production de cette structure

Country Status (6)

Country Link
US (1) US6391828B1 (fr)
EP (1) EP1029371A1 (fr)
JP (1) JP2001522148A (fr)
CA (1) CA2308480A1 (fr)
DE (1) DE19748483C1 (fr)
WO (1) WO1999023707A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111933349A (zh) * 2020-08-19 2020-11-13 中国科学院上海微系统与信息技术研究所 低温超导薄膜

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Publication number Priority date Publication date Assignee Title
DE10014197A1 (de) * 2000-03-22 2001-09-27 Abb Research Ltd Hochtemperatursupraleiteranordnung
WO2003012460A2 (fr) * 2001-08-01 2003-02-13 Southwire Company Cable hts triaxial
US7025826B2 (en) * 2003-08-19 2006-04-11 Superpower, Inc. Methods for surface-biaxially-texturing amorphous films
GB0514504D0 (en) * 2005-07-14 2005-08-24 Tarrant Colin D Improvements in and relating to superconducting material
TWI387417B (zh) * 2008-08-29 2013-02-21 Ind Tech Res Inst 電路板結構及其製作方法
US20150279519A1 (en) * 2012-06-27 2015-10-01 Furukawa Electric Co., Ltd. Superconducting wire

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Publication number Priority date Publication date Assignee Title
US5661112A (en) * 1987-07-24 1997-08-26 Hatta; Shinichiro Superconductor
US4994435A (en) * 1987-10-16 1991-02-19 The Furukawa Electric Co., Ltd. Laminated layers of a substrate, noble metal, and interlayer underneath an oxide superconductor
JP2639961B2 (ja) * 1988-03-25 1997-08-13 三洋電機株式会社 超電導素子の製造方法
US5196381A (en) * 1990-01-16 1993-03-23 E. I. Du Pont De Nemours And Company Metaphosphate glass composition
DE4119984A1 (de) * 1991-06-18 1992-12-24 Hoechst Ag Resistiver strombegrenzer
DE19520205A1 (de) * 1995-06-01 1996-12-05 Siemens Ag Resistive Strombegrenzungseinrichtung unter Verwendung von Hoch-T¶c¶Supraleitermaterial

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9923707A1 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111933349A (zh) * 2020-08-19 2020-11-13 中国科学院上海微系统与信息技术研究所 低温超导薄膜
CN111933349B (zh) * 2020-08-19 2021-11-02 中国科学院上海微系统与信息技术研究所 低温超导薄膜

Also Published As

Publication number Publication date
CA2308480A1 (fr) 1999-05-14
DE19748483C1 (de) 1999-03-04
US6391828B1 (en) 2002-05-21
JP2001522148A (ja) 2001-11-13
WO1999023707A1 (fr) 1999-05-14

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