EP0897523A4 - Dispositif a pont semiconducteur et procede de fabrication - Google Patents

Dispositif a pont semiconducteur et procede de fabrication

Info

Publication number
EP0897523A4
EP0897523A4 EP97921498A EP97921498A EP0897523A4 EP 0897523 A4 EP0897523 A4 EP 0897523A4 EP 97921498 A EP97921498 A EP 97921498A EP 97921498 A EP97921498 A EP 97921498A EP 0897523 A4 EP0897523 A4 EP 0897523A4
Authority
EP
European Patent Office
Prior art keywords
making
same
bridge device
semiconductor bridge
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97921498A
Other languages
German (de)
English (en)
Other versions
EP0897523A1 (fr
EP0897523B1 (fr
Inventor
Bernardo Martinez-Tovar
John A Montoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SCB Technologies Inc
Original Assignee
SCB Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SCB Technologies Inc filed Critical SCB Technologies Inc
Publication of EP0897523A1 publication Critical patent/EP0897523A1/fr
Publication of EP0897523A4 publication Critical patent/EP0897523A4/fr
Application granted granted Critical
Publication of EP0897523B1 publication Critical patent/EP0897523B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42AMMUNITION; BLASTING
    • F42BEXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
    • F42B3/00Blasting cartridges, i.e. case and explosive
    • F42B3/10Initiators therefor
    • F42B3/12Bridge initiators
    • F42B3/13Bridge initiators with semiconductive bridge

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Die Bonding (AREA)
  • Coating By Spraying Or Casting (AREA)
EP97921498A 1996-05-09 1997-05-02 Dispositif a pont semiconducteur et procede de fabrication Expired - Lifetime EP0897523B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/644,008 US6133146A (en) 1996-05-09 1996-05-09 Semiconductor bridge device and method of making the same
US644008 1996-05-09
PCT/US1997/007490 WO1997042462A1 (fr) 1996-05-09 1997-05-02 Dispositif a pont semiconducteur et procede de fabrication

Publications (3)

Publication Number Publication Date
EP0897523A1 EP0897523A1 (fr) 1999-02-24
EP0897523A4 true EP0897523A4 (fr) 1999-07-28
EP0897523B1 EP0897523B1 (fr) 2002-04-10

Family

ID=24583068

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97921498A Expired - Lifetime EP0897523B1 (fr) 1996-05-09 1997-05-02 Dispositif a pont semiconducteur et procede de fabrication

Country Status (10)

Country Link
US (1) US6133146A (fr)
EP (1) EP0897523B1 (fr)
AR (1) AR007028A1 (fr)
AT (1) ATE216063T1 (fr)
BR (1) BR9710438A (fr)
CA (1) CA2253672C (fr)
DE (1) DE69711864T2 (fr)
ES (1) ES2175401T3 (fr)
NO (1) NO985233L (fr)
WO (1) WO1997042462A1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19832449A1 (de) * 1998-07-18 2000-01-20 Dynamit Nobel Ag Zündbrücke für ein elektrisches Anzündelement
JP3175051B2 (ja) * 1999-10-14 2001-06-11 昭和金属工業株式会社 電気発火式イニシエータ
JP2001241896A (ja) * 1999-12-22 2001-09-07 Scb Technologies Inc チタン半導体ブリッジの点火装置
FR2807157B1 (fr) * 2000-04-04 2003-01-31 Vishay Sa Element resistif pour initiateur pyrotechnique
US6772692B2 (en) 2000-05-24 2004-08-10 Lifesparc, Inc. Electro-explosive device with laminate bridge
WO2002021067A2 (fr) * 2000-09-07 2002-03-14 Nknm Limited Dispositif electro-explosif muni d'un pont lamine
US6902656B2 (en) * 2002-05-24 2005-06-07 Dalsa Semiconductor Inc. Fabrication of microstructures with vacuum-sealed cavity
US7951247B2 (en) * 2002-10-01 2011-05-31 Lawrence Livermore National Security, Llc Nano-laminate-based ignitors
DE10241363A1 (de) * 2002-09-06 2004-03-18 Flexiva Automation & Anlagenbau Gmbh Pyrotechnisches Zündsystem
JP2004209342A (ja) * 2002-12-27 2004-07-29 Takata Corp イニシエータ及びガス発生器
US7638416B2 (en) * 2005-12-13 2009-12-29 Versatilis Llc Methods of making semiconductor-based electronic devices on a wire and articles that can be made using such devices
US7700471B2 (en) * 2005-12-13 2010-04-20 Versatilis Methods of making semiconductor-based electronic devices on a wire and articles that can be made thereby
US7871912B2 (en) * 2005-12-13 2011-01-18 Versatilis Llc Methods of making semiconductor-based electronic devices by forming freestanding semiconductor structures
WO2008076756A2 (fr) * 2006-12-13 2008-06-26 Versatilis Llc Procédé de fabrication de dispositifs électroniques à base de semi-conducteur sur un fil et en formant des structures de semi-conducteur autonomes, et dispositifs qui peuvent être fabriqués ainsi
US9500448B1 (en) * 2015-06-09 2016-11-22 Reynolds Systems, Inc. Bursting switch
CA2990014C (fr) * 2015-06-26 2023-10-03 Jozef Hubertus Gerardus SCHOLTES Dispositif initiateur de circuit integre
EP3673225B1 (fr) * 2017-08-21 2023-03-29 Lawrence Livermore National Security, LLC Procédés pour améliorer l'uniformité et l'efficacité d'explosion dans des détonateurs à feuille explosive
CN108502842B (zh) * 2018-03-26 2019-12-03 北京理工大学 一种应用于引信安保的微机电组合逻辑器件及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376585A (en) * 1992-09-25 1994-12-27 Texas Instruments Incorporated Method for forming titanium tungsten local interconnect for integrated circuits

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US39542A (en) * 1863-08-18 Improvement in f
US722913A (en) * 1902-02-25 1903-03-17 Nikolaus Schmitt Electric ignition device.
US2942546A (en) * 1950-03-30 1960-06-28 Herman A Liebhafsky Device for actuating explosives by electrical breakdown
US3108905A (en) * 1960-05-16 1963-10-29 Gen Motors Corp Method of making a semiconductive ceramic body and a low voltage sparking device emboying same
US3196041A (en) * 1960-11-25 1965-07-20 Gen Lab Associates Inc Method of making a semiconductor gap for an initiator
GB960186A (en) * 1961-10-19 1964-06-10 Bendix Corp Electrically triggered squib
US3249800A (en) * 1963-08-02 1966-05-03 Henry J Huber Fast acting switch utilizing a vaporizable wire
US3366055A (en) * 1966-11-15 1968-01-30 Green Mansions Inc Semiconductive explosive igniter
US3426682A (en) * 1967-04-27 1969-02-11 Sidney A Corren Exploding fuse
DE2020016C3 (de) * 1970-04-24 1974-12-12 Dynamit Nobel Ag, 5210 Troisdorf Metallschichtzündmittel
US3618523A (en) * 1970-05-06 1971-11-09 Us Navy Stab-electric detonator
US3669022A (en) * 1970-08-05 1972-06-13 Iit Res Inst Thin film device
US3725671A (en) * 1970-11-02 1973-04-03 Us Navy Pyrotechnic eradication of microcircuits
US3882323A (en) * 1973-12-17 1975-05-06 Us Navy Method and apparatus for protecting sensitive information contained in thin-film microelectonic circuitry
US3883762A (en) * 1974-06-17 1975-05-13 Bendix Corp Electrical discharge device comprising an insulator body having an electrically semi-conducting coating formed thereon
US3974424A (en) * 1974-10-07 1976-08-10 Ici United States Inc. Variable resistance bridge element
US4312271A (en) * 1976-07-08 1982-01-26 Systems, Science And Software Delay detonator device
JPS55155092U (fr) * 1979-04-23 1980-11-08
US4471697A (en) * 1982-01-28 1984-09-18 The United States Of America As Represented By The United States Department Of Energy Bidirectional slapper detonator
US4708060A (en) * 1985-02-19 1987-11-24 The United States Of America As Represented By The United States Department Of Energy Semiconductor bridge (SCB) igniter
GB2190730B (en) * 1986-05-22 1990-10-24 Detonix Close Corp Detonator firing element
GB8712789D0 (en) * 1986-06-25 1989-10-18 Secr Defence Pyrotechnic train
US4976200A (en) * 1988-12-30 1990-12-11 The United States Of America As Represented By The United States Department Of Energy Tungsten bridge for the low energy ignition of explosive and energetic materials
US5173449A (en) * 1989-06-05 1992-12-22 Motorola, Inc. Metallization process
US5355800A (en) * 1990-02-13 1994-10-18 Dow Robert L Combined EED igniter means and means for protecting the EED from inadvertent extraneous electricity induced firing
US5166468A (en) * 1991-04-05 1992-11-24 Thiokol Corporation Thermocouple-triggered igniter
US5431101A (en) * 1991-04-16 1995-07-11 Thiokol Corporation Low cost hermetically sealed squib
US5179248A (en) * 1991-10-08 1993-01-12 Scb Technologies, Inc. Zener diode for protection of semiconductor explosive bridge
US5309841A (en) * 1991-10-08 1994-05-10 Scb Technologies, Inc. Zener diode for protection of integrated circuit explosive bridge
GB9216517D0 (en) * 1992-08-04 1992-09-23 Ici Plc Pyrotechnic sheet material
US5370054A (en) * 1992-10-01 1994-12-06 The United States Of America As Represented By The Secretary Of The Army Semiconductor slapper
US5385097A (en) * 1993-07-16 1995-01-31 At&T Corp. Electroexplosive device
US5439847A (en) * 1993-11-05 1995-08-08 At&T Corp. Integrated circuit fabrication with a raised feature as mask
US5503077A (en) * 1994-03-29 1996-04-02 Halliburton Company Explosive detonation apparatus
US5484747A (en) * 1995-05-25 1996-01-16 United Microelectronics Corporation Selective metal wiring and plug process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376585A (en) * 1992-09-25 1994-12-27 Texas Instruments Incorporated Method for forming titanium tungsten local interconnect for integrated circuits

Also Published As

Publication number Publication date
ES2175401T3 (es) 2002-11-16
DE69711864T2 (de) 2002-08-29
NO985233L (no) 1999-01-08
EP0897523A1 (fr) 1999-02-24
DE69711864D1 (de) 2002-05-16
ATE216063T1 (de) 2002-04-15
NO985233D0 (no) 1998-11-09
EP0897523B1 (fr) 2002-04-10
WO1997042462A1 (fr) 1997-11-13
BR9710438A (pt) 2000-01-11
CA2253672C (fr) 2002-04-16
US6133146A (en) 2000-10-17
AR007028A1 (es) 1999-10-13
CA2253672A1 (fr) 1997-11-13

Similar Documents

Publication Publication Date Title
GB9515147D0 (en) Semiconductor device and method of manufacturing the same
EP0700087A3 (fr) Dispositif semi-conducteur et procédé de fabrication
EP0690497A3 (fr) Dispositif semi-conducteur et procédé de fabrication
GB2314975B (en) Analog semiconductor device and method of fabricating the same
GB2329069B (en) Semiconductor device and method of manufacture
AU1174197A (en) Semiconductor device and method of manufacturing the same
EP0897523A4 (fr) Dispositif a pont semiconducteur et procede de fabrication
GB2332777B (en) Semiconductor device and method of manufacture
GB9500995D0 (en) Semiconductor device and method of fabrication thereof
GB2290165B (en) Semiconductor device and method of fabrication thereof
GB2322005B (en) Semiconductor device and manufacturing method of the same
GB9626387D0 (en) Semiconductor device and method for manufacturing the same of the invention
GB2318449B (en) Semiconductor device and method of fabricating the same
SG68032A1 (en) Semiconductor device and method of manufacturing the same
GB9924626D0 (en) Semiconductor device and method of forming the same
GB2336717B (en) Semiconductor device and method of making the same
GB2306780B (en) Semiconductor device and method of manufacture
GB2279806B (en) Semiconductor device and method of making same
EP0863553A4 (fr) Dispositif a semi-conducteur et son procede de production
TW359892B (en) Semiconductor device and method of manufacturing the same
GB9612263D0 (en) Semiconductor device and method of manufacture
GB2307790B (en) Semiconductor device and method of manufacture
EP0723297A3 (fr) Dispositif de mémoire semi-conductrice et procédé de fabrication associé
GB2293485B (en) Semiconductor device and method of making the semiconductor device
KR100238220B1 (en) Plattening method of semiconductor device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19981201

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

A4 Supplementary search report drawn up and despatched

Effective date: 19990615

AK Designated contracting states

Kind code of ref document: A4

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

RIC1 Information provided on ipc code assigned before grant

Free format text: 6F 42B 3/13 A, 6F 42C 19/12 B, 6H 01L 21/44 B, 6F 42B 3/198 B

17Q First examination report despatched

Effective date: 20000804

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020410

Ref country code: LI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020410

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020410

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020410

Ref country code: CH

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020410

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020410

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020410

REF Corresponds to:

Ref document number: 216063

Country of ref document: AT

Date of ref document: 20020415

Kind code of ref document: T

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020502

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 69711864

Country of ref document: DE

Date of ref document: 20020516

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: MC

Payment date: 20020531

Year of fee payment: 6

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020710

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020710

ET Fr: translation filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: BE

Payment date: 20020717

Year of fee payment: 6

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: ES

Ref legal event code: FG2A

Ref document number: 2175401

Country of ref document: ES

Kind code of ref document: T3

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20030113

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20030531

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IE

Payment date: 20040519

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 20040521

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: ES

Payment date: 20040609

Year of fee payment: 8

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050502

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050502

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050503

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050504

EUG Se: european patent has lapsed
REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

REG Reference to a national code

Ref country code: ES

Ref legal event code: FD2A

Effective date: 20050504

REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

REG Reference to a national code

Ref country code: FR

Ref legal event code: TP

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20100525

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20100430

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20100428

Year of fee payment: 14

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 69711864

Country of ref document: DE

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 69711864

Country of ref document: DE

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20110502

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20120131

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20110531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20110502

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20111130