ES2175401T3 - Dispositivo de puente semiconductor y procedimiento de fabricacion. - Google Patents

Dispositivo de puente semiconductor y procedimiento de fabricacion.

Info

Publication number
ES2175401T3
ES2175401T3 ES97921498T ES97921498T ES2175401T3 ES 2175401 T3 ES2175401 T3 ES 2175401T3 ES 97921498 T ES97921498 T ES 97921498T ES 97921498 T ES97921498 T ES 97921498T ES 2175401 T3 ES2175401 T3 ES 2175401T3
Authority
ES
Spain
Prior art keywords
semiconductor
volframio
titanium
layer
bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97921498T
Other languages
English (en)
Inventor
Bernardo Martinez-Tovar
John A Montoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SCB Technologies Inc
Original Assignee
SCB Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SCB Technologies Inc filed Critical SCB Technologies Inc
Application granted granted Critical
Publication of ES2175401T3 publication Critical patent/ES2175401T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42—AMMUNITION; BLASTING
    • F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
    • F42B3/00—Blasting cartridges, i.e. case and explosive
    • F42B3/10—Initiators therefor
    • F42B3/12—Bridge initiators
    • F42B3/13—Bridge initiators with semiconductive bridge

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Die Bonding (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

UN DISPOSITIVO, POR EJEMPLO, UN DISPOSITIVO DE CEBADO DE UN EXPLOSIVO (24) INCLUYE UN DISPOSITIVO DE PUENTE SEMICONDUCTOR (10) QUE COMPRENDE UNAS PLACAS SEMICONDUCTORAS (14A, 14B), SEPARADAS POR UN PUENTE INICIADOR (14C) Y QUE TIENE SUPERFICIES METALIZADAS (16A, 16B) DISPUESTAS SOBRE LAS PLACAS (14A, 14B). CADA UNA DE LAS SUPERFICIES METALIZADAS (16A, 16B) COMPRENDE UNA CAPA BASE DE TITANIO (18), UNA CAPA INTERMEDIA DE TITANIO - VOLFRAMIO (20) Y UNA CAPA SUPERIOR DE VOLFRAMIO (22). ESTA CONSTRUCCION DE CAPAS MULTIPLES ES DE SIMPLE APLICACION, PROPORCIONA UNA BUENA ADHERENCIA AL SEMICONDUCTOR (14) Y MEJORES CARACTERISTICAS AL PUENTE SEMICONDUCTOR, EVITANDO LOS PROBLEMAS DE ELECTROMIGRACION QUE SE PRODUCEN CON EL USO DE SUPERFICIES METALIZADAS DE ALUMINIO EN SEVERAS CONDICIONES DE ENSAYOS SIN FUEGO Y NIVELES MUY BAJOS DE CORRIENTE O TENSION DE DISPARO. EL SEMICONDUCTOR (14) PUEDE IR CUBIERTO OPCIONALMENTE POR UNA CAPA O CUBIERTA (117) DE UNA CAPA DE METAL ESTRATIFICADA SIMILAR O IDENTICA A LAS SUPERFICIES METALIZADAS (16A, 16B). UN PROCEDIMIENTO PARA FABRICAR DISPOSITIVOS DE PUENTE DE SEMICONDUCTOR INCLUYE LA PULVERIZACION METALICA DE TITANIO, A CONTINUACION DE TITANIO MAS VOLFRAMIO Y POR ULTIMO DE VOLFRAMIO SOBRE LA SUPERFICIE ADECUADAMENTE ENMASCARADA DEL SEMICONDUCTOR, A FIN DE ALCANZAR LAS SUPERFICIES METALIZADAS DE CAPAS MULTIPLES (16A, 16B) Y/O LA TAPA (117) DE LA INVENCION.
ES97921498T 1996-05-09 1997-05-02 Dispositivo de puente semiconductor y procedimiento de fabricacion. Expired - Lifetime ES2175401T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/644,008 US6133146A (en) 1996-05-09 1996-05-09 Semiconductor bridge device and method of making the same

Publications (1)

Publication Number Publication Date
ES2175401T3 true ES2175401T3 (es) 2002-11-16

Family

ID=24583068

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97921498T Expired - Lifetime ES2175401T3 (es) 1996-05-09 1997-05-02 Dispositivo de puente semiconductor y procedimiento de fabricacion.

Country Status (10)

Country Link
US (1) US6133146A (es)
EP (1) EP0897523B1 (es)
AR (1) AR007028A1 (es)
AT (1) ATE216063T1 (es)
BR (1) BR9710438A (es)
CA (1) CA2253672C (es)
DE (1) DE69711864T2 (es)
ES (1) ES2175401T3 (es)
NO (1) NO985233L (es)
WO (1) WO1997042462A1 (es)

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DE19832449A1 (de) * 1998-07-18 2000-01-20 Dynamit Nobel Ag Zündbrücke für ein elektrisches Anzündelement
JP3175051B2 (ja) * 1999-10-14 2001-06-11 昭和金属工業株式会社 電気発火式イニシエータ
JP2001241896A (ja) * 1999-12-22 2001-09-07 Scb Technologies Inc チタン半導体ブリッジの点火装置
FR2807157B1 (fr) * 2000-04-04 2003-01-31 Vishay Sa Element resistif pour initiateur pyrotechnique
US6772692B2 (en) 2000-05-24 2004-08-10 Lifesparc, Inc. Electro-explosive device with laminate bridge
WO2002021067A2 (en) * 2000-09-07 2002-03-14 Nknm Limited Electro-explosive device with laminate bridge
US6902656B2 (en) * 2002-05-24 2005-06-07 Dalsa Semiconductor Inc. Fabrication of microstructures with vacuum-sealed cavity
US7951247B2 (en) * 2002-10-01 2011-05-31 Lawrence Livermore National Security, Llc Nano-laminate-based ignitors
DE10241363A1 (de) * 2002-09-06 2004-03-18 Flexiva Automation & Anlagenbau Gmbh Pyrotechnisches Zündsystem
JP2004209342A (ja) * 2002-12-27 2004-07-29 Takata Corp イニシエータ及びガス発生器
US7638416B2 (en) * 2005-12-13 2009-12-29 Versatilis Llc Methods of making semiconductor-based electronic devices on a wire and articles that can be made using such devices
US7700471B2 (en) * 2005-12-13 2010-04-20 Versatilis Methods of making semiconductor-based electronic devices on a wire and articles that can be made thereby
US7871912B2 (en) * 2005-12-13 2011-01-18 Versatilis Llc Methods of making semiconductor-based electronic devices by forming freestanding semiconductor structures
WO2008076756A2 (en) * 2006-12-13 2008-06-26 Versatilis Llc Method of making semiconductor-based electronic devices on a wire and by forming freestanding semiconductor structures, and devices that can be made thereby
US9500448B1 (en) * 2015-06-09 2016-11-22 Reynolds Systems, Inc. Bursting switch
CA2990014C (en) * 2015-06-26 2023-10-03 Jozef Hubertus Gerardus SCHOLTES Integrated circuit initiator device
EP3673225B1 (en) * 2017-08-21 2023-03-29 Lawrence Livermore National Security, LLC Methods to improve burst uniformity and efficiency in exploding foil initiators
CN108502842B (zh) * 2018-03-26 2019-12-03 北京理工大学 一种应用于引信安保的微机电组合逻辑器件及其制备方法

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US3108905A (en) * 1960-05-16 1963-10-29 Gen Motors Corp Method of making a semiconductive ceramic body and a low voltage sparking device emboying same
US3196041A (en) * 1960-11-25 1965-07-20 Gen Lab Associates Inc Method of making a semiconductor gap for an initiator
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US3249800A (en) * 1963-08-02 1966-05-03 Henry J Huber Fast acting switch utilizing a vaporizable wire
US3366055A (en) * 1966-11-15 1968-01-30 Green Mansions Inc Semiconductive explosive igniter
US3426682A (en) * 1967-04-27 1969-02-11 Sidney A Corren Exploding fuse
DE2020016C3 (de) * 1970-04-24 1974-12-12 Dynamit Nobel Ag, 5210 Troisdorf Metallschichtzündmittel
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Also Published As

Publication number Publication date
DE69711864T2 (de) 2002-08-29
NO985233L (no) 1999-01-08
EP0897523A1 (en) 1999-02-24
DE69711864D1 (de) 2002-05-16
ATE216063T1 (de) 2002-04-15
NO985233D0 (no) 1998-11-09
EP0897523B1 (en) 2002-04-10
WO1997042462A1 (en) 1997-11-13
BR9710438A (pt) 2000-01-11
CA2253672C (en) 2002-04-16
US6133146A (en) 2000-10-17
EP0897523A4 (en) 1999-07-28
AR007028A1 (es) 1999-10-13
CA2253672A1 (en) 1997-11-13

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