EP0874403A3 - Dispositifs semi-conducteurs avec des couches d'interférences à ondes quantiques - Google Patents

Dispositifs semi-conducteurs avec des couches d'interférences à ondes quantiques Download PDF

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Publication number
EP0874403A3
EP0874403A3 EP98106816A EP98106816A EP0874403A3 EP 0874403 A3 EP0874403 A3 EP 0874403A3 EP 98106816 A EP98106816 A EP 98106816A EP 98106816 A EP98106816 A EP 98106816A EP 0874403 A3 EP0874403 A3 EP 0874403A3
Authority
EP
European Patent Office
Prior art keywords
layer
quantum
wave interference
semiconductor devices
interference layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98106816A
Other languages
German (de)
English (en)
Other versions
EP0874403A2 (fr
Inventor
Hiroyuki Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canare Electric Co Ltd
Original Assignee
Canare Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canare Electric Co Ltd filed Critical Canare Electric Co Ltd
Publication of EP0874403A2 publication Critical patent/EP0874403A2/fr
Publication of EP0874403A3 publication Critical patent/EP0874403A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H01S5/2013—MQW barrier reflection layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y10S977/759—Quantum well dimensioned for intersubband transitions, e.g. for use in unipolar light emitters or quantum well infrared photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y10S977/76—Superlattice with graded effective bandgap, e.g. "chirp-graded" superlattice
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y10S977/761—Superlattice with well or barrier thickness adapted for increasing the reflection, transmission, or filtering of carriers having energies above the bulk-form conduction or valence band energy level of the well or barrier, i.e. well or barrier with n-integer-λ-carrier-/4 thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Biophysics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Photovoltaic Devices (AREA)
EP98106816A 1997-04-25 1998-04-15 Dispositifs semi-conducteurs avec des couches d'interférences à ondes quantiques Withdrawn EP0874403A3 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP123481/97 1997-04-25
JP12348197 1997-04-25
JP12348197A JP3014339B2 (ja) 1997-04-25 1997-04-25 量子波干渉層を有した半導体素子

Publications (2)

Publication Number Publication Date
EP0874403A2 EP0874403A2 (fr) 1998-10-28
EP0874403A3 true EP0874403A3 (fr) 2003-11-05

Family

ID=14861709

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98106816A Withdrawn EP0874403A3 (fr) 1997-04-25 1998-04-15 Dispositifs semi-conducteurs avec des couches d'interférences à ondes quantiques

Country Status (3)

Country Link
US (2) US6175123B1 (fr)
EP (1) EP0874403A3 (fr)
JP (1) JP3014339B2 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331716B1 (en) 1998-02-06 2001-12-18 Canare Electric Co., Ltd. Variable capacity device with quantum-wave interference layers
US6294795B1 (en) 1998-04-28 2001-09-25 Canare Electric Co., Ltd. Light-receiving device with quantum-wave interference layers
JP2000124443A (ja) * 1998-10-21 2000-04-28 Canare Electric Co Ltd エネルギバンド急変層を有した半導体素子
JP3442668B2 (ja) * 1998-10-23 2003-09-02 カナレ電気株式会社 量子波干渉層を有した電界効果トランジスタ
JP2000133655A (ja) * 1998-10-23 2000-05-12 Canare Electric Co Ltd 量子波干渉層を有するトランジスタ
EP1011150A3 (fr) * 1998-12-17 2004-01-02 Canare Electric Co., Ltd. Dispositif photorécepteur comprenant des couches à interférences d'ondes quantiques
JP4119158B2 (ja) * 2002-04-23 2008-07-16 三菱電機株式会社 傾斜状多重量子バリアを用いた半導体発光素子
WO2004084279A1 (fr) * 2003-03-14 2004-09-30 Midwest Research Institute Caracteristiques de plaquettes par reflectometrie
EP1667292B1 (fr) * 2003-08-26 2010-11-03 Sony Corporation DISPOSITIF ELECTROLUMINESCENT A SEMI-CONDUCTEUR A COMPOSE GaN III-V, ET SON PROCEDE DE FABRICATION
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7952110B2 (en) 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
CN101467274B (zh) * 2006-06-12 2012-02-29 3M创新有限公司 具有再发射半导体构造和光学元件的led装置
JP2009540618A (ja) * 2006-06-12 2009-11-19 スリーエム イノベイティブ プロパティズ カンパニー 再発光半導体構造体及び集束性光学素子を有するｌｅｄデバイス
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
EP1883119B1 (fr) 2006-07-27 2015-11-04 OSRAM Opto Semiconductors GmbH Structure de recouvrement semi-conductrice dotée d'une surgrille
EP1883140B1 (fr) * 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD ou DEL avec une couche de revêtment superréseau et dopage gradué
EP1883141B1 (fr) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD ou DEL avec une couche de revêtement superréseau
US8022292B2 (en) 2006-10-02 2011-09-20 SolASE Corporation Photovoltaic device employing a resonator cavity
KR20120129029A (ko) * 2011-05-18 2012-11-28 엘지이노텍 주식회사 발광 소자
KR20120138080A (ko) * 2011-06-14 2012-12-24 엘지이노텍 주식회사 발광 소자

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH01181578A (ja) * 1988-01-12 1989-07-19 Mitsubishi Electric Corp アバランシ・ホトダイオード
WO1990005996A1 (fr) * 1988-11-16 1990-05-31 Gaylord Thomas K Dispositifs ondulatoires a electrons et a trous utilises pour la technique des semiconducteurs et de la mecanique quantique
US5091756A (en) * 1986-08-14 1992-02-25 Tokyo Institute Of Technology Superlattice structure
EP0702439A1 (fr) * 1994-09-19 1996-03-20 Mitsubishi Denki Kabushiki Kaisha Laser à semi-conducteur et son procédé de fabrication
US5544187A (en) * 1993-11-25 1996-08-06 Mitsubishi Denki Kabushiki Kaisha Multiquantum barrier structure and semiconductor laser diode

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Publication number Priority date Publication date Assignee Title
JPS6028268A (ja) * 1983-07-26 1985-02-13 Agency Of Ind Science & Technol 半導体装置
US4814837A (en) * 1986-03-13 1989-03-21 The United States Of America As Represented By The Secretary Of The Navy Quantum well electron barrier diode
US5251224A (en) 1990-11-09 1993-10-05 The Furukawa Electric Co., Ltd. Quantum barrier semiconductor optical device
DE69229369T2 (de) * 1991-03-28 2000-01-27 Nec Corp Halbleiterphotodetektor mit Lawinenmultiplikation
JPH06204457A (ja) 1992-05-08 1994-07-22 Furukawa Electric Co Ltd:The 多重量子障壁ショットキー接合素子
US5789760A (en) * 1992-05-08 1998-08-04 The Furukawa Electric Co., Ltd. Multiquantum barrier Schottky junction device
JPH06260493A (ja) * 1993-03-05 1994-09-16 Mitsubishi Electric Corp 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091756A (en) * 1986-08-14 1992-02-25 Tokyo Institute Of Technology Superlattice structure
JPH01181578A (ja) * 1988-01-12 1989-07-19 Mitsubishi Electric Corp アバランシ・ホトダイオード
WO1990005996A1 (fr) * 1988-11-16 1990-05-31 Gaylord Thomas K Dispositifs ondulatoires a electrons et a trous utilises pour la technique des semiconducteurs et de la mecanique quantique
US5544187A (en) * 1993-11-25 1996-08-06 Mitsubishi Denki Kabushiki Kaisha Multiquantum barrier structure and semiconductor laser diode
EP0702439A1 (fr) * 1994-09-19 1996-03-20 Mitsubishi Denki Kabushiki Kaisha Laser à semi-conducteur et son procédé de fabrication

Non-Patent Citations (6)

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Title
CHEN Z ET AL: "Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector", MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, UZHGOROD, UKRAINE, 30 SEPT.-2 OCT. 1996, vol. 3182, Proceedings of the SPIE - The International Society for Optical Engineering, 1997, SPIE-Int. Soc. Opt. Eng, USA, pages 51 - 58, XP002123998, ISSN: 0277-786X *
LEE C-T ET AL: "Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure", APPLIED PHYSICS LETTERS, vol. 67, no. 14, 2 October 1995 (1995-10-02), AMERICAN INSTITUTE OF PHYSICS, NEW YORK, US, pages 2046 - 2048, XP002123997, ISSN: 0003-6951 *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 468 (E - 834) 23 October 1989 (1989-10-23) *
SCHNEIDER H ET AL: "PHOTOCURRENT AND RAMAN SPECTROSCOPY OF STARK LADDER SUPERLATTICES WITH SINGLE MONOLAYER ALAS BARRIERS", JOURNAL OF CRYSTAL GROWTH, vol. 127, no. 1/4, February 1993 (1993-02-01), NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, pages 836 - 840, XP000441188, ISSN: 0022-0248 *
TAKAGI T ET AL: "Electron wave reflection by multiquantum barrier", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS & SHORT NOTES), vol. 31, no. 2A, February 1992 (1992-02-01), TOKYO, JP, pages 197 - 200, XP002123188, ISSN: 0021-4922 *
TAKAGI T ET AL: "POTENTIAL BARRIER HEIGHT ANALYSIS OF ALGAINP MULTI-QUANTUM BARRIER (MQB)", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 29, no. 11, November 1990 (1990-11-01), pages L1977 - L1980, XP000224038, ISSN: 0021-4922 *

Also Published As

Publication number Publication date
JP3014339B2 (ja) 2000-02-28
JPH10303406A (ja) 1998-11-13
US6476412B1 (en) 2002-11-05
EP0874403A2 (fr) 1998-10-28
US6175123B1 (en) 2001-01-16

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