EP0817276A4 - Halbleitervorrichtung und herstellungsverfahren - Google Patents

Halbleitervorrichtung und herstellungsverfahren

Info

Publication number
EP0817276A4
EP0817276A4 EP95912464A EP95912464A EP0817276A4 EP 0817276 A4 EP0817276 A4 EP 0817276A4 EP 95912464 A EP95912464 A EP 95912464A EP 95912464 A EP95912464 A EP 95912464A EP 0817276 A4 EP0817276 A4 EP 0817276A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
production method
method therefor
therefor
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95912464A
Other languages
English (en)
French (fr)
Other versions
EP0817276A1 (de
Inventor
Koji Hirata
Tomonori Tanoue
Hiroshi Masuda
Hiroyuki Uchiyama
Kazuhiro Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi ULSI Engineering Corp
Hitachi Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Publication of EP0817276A1 publication Critical patent/EP0817276A1/de
Publication of EP0817276A4 publication Critical patent/EP0817276A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
EP95912464A 1995-03-17 1995-03-17 Halbleitervorrichtung und herstellungsverfahren Withdrawn EP0817276A4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1995/000485 WO1996029740A1 (en) 1995-03-17 1995-03-17 Semiconductor device and production method therefor

Publications (2)

Publication Number Publication Date
EP0817276A1 EP0817276A1 (de) 1998-01-07
EP0817276A4 true EP0817276A4 (de) 1998-08-19

Family

ID=14125772

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95912464A Withdrawn EP0817276A4 (de) 1995-03-17 1995-03-17 Halbleitervorrichtung und herstellungsverfahren

Country Status (2)

Country Link
EP (1) EP0817276A4 (de)
WO (1) WO1996029740A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19834491A1 (de) * 1998-07-31 2000-02-03 Daimler Chrysler Ag Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors
KR100358307B1 (ko) * 2001-01-10 2002-10-25 주식회사 케이이씨 이종접합 바이폴라 소자

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62206880A (ja) * 1986-03-07 1987-09-11 Nec Corp ヘテロバイポ−ラトランジスタの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02292830A (ja) * 1989-05-02 1990-12-04 Toshiba Corp 半導体装置およびその製造方法
JPH03270170A (ja) * 1990-03-20 1991-12-02 Fujitsu Ltd 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62206880A (ja) * 1986-03-07 1987-09-11 Nec Corp ヘテロバイポ−ラトランジスタの製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 012, no. 063 (E - 585) 25 February 1988 (1988-02-25) *
See also references of WO9629740A1 *

Also Published As

Publication number Publication date
EP0817276A1 (de) 1998-01-07
WO1996029740A1 (en) 1996-09-26

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Legal Events

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