EP0812477A4 - Ein verbesserter laserabscheidbares material - Google Patents
Ein verbesserter laserabscheidbares materialInfo
- Publication number
- EP0812477A4 EP0812477A4 EP96908627A EP96908627A EP0812477A4 EP 0812477 A4 EP0812477 A4 EP 0812477A4 EP 96908627 A EP96908627 A EP 96908627A EP 96908627 A EP96908627 A EP 96908627A EP 0812477 A4 EP0812477 A4 EP 0812477A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- improved laser
- ablateable
- laser ablateable
- improved
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL11282695A IL112826A (en) | 1995-02-28 | 1995-02-28 | Method for settling a deposited plasma polymer layer |
IL11282695 | 1995-02-28 | ||
PCT/US1996/002920 WO1996027212A1 (en) | 1995-02-28 | 1996-02-27 | An improved laser ablateable material |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0812477A1 EP0812477A1 (de) | 1997-12-17 |
EP0812477A4 true EP0812477A4 (de) | 1998-10-07 |
Family
ID=11067145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP96908627A Withdrawn EP0812477A4 (de) | 1995-02-28 | 1996-02-27 | Ein verbesserter laserabscheidbares material |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0812477A4 (de) |
JP (1) | JPH11502060A (de) |
KR (1) | KR19980702598A (de) |
CA (1) | CA2214109A1 (de) |
IL (1) | IL112826A (de) |
WO (1) | WO1996027212A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8268675B2 (en) * | 2011-02-11 | 2012-09-18 | Nordson Corporation | Passivation layer for semiconductor device packaging |
WO2015034690A1 (en) * | 2013-09-04 | 2015-03-12 | Tokyo Electron Limited | Uv-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly |
US9349604B2 (en) | 2013-10-20 | 2016-05-24 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
US9793137B2 (en) | 2013-10-20 | 2017-10-17 | Tokyo Electron Limited | Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines |
GB2529620A (en) * | 2014-08-18 | 2016-03-02 | Flexenable Ltd | Patterning layer stacks for electronic devices |
US9947597B2 (en) | 2016-03-31 | 2018-04-17 | Tokyo Electron Limited | Defectivity metrology during DSA patterning |
CN109716485A (zh) | 2016-07-15 | 2019-05-03 | 布鲁尔科技公司 | 激光烧蚀介电材料 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4371407A (en) * | 1980-10-28 | 1983-02-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for producing semiconductor device |
US4374179A (en) * | 1980-12-18 | 1983-02-15 | Honeywell Inc. | Plasma polymerized ethane for interlayer dielectric |
JPS5893241A (ja) * | 1981-11-30 | 1983-06-02 | Sony Corp | 半導体装置 |
US4727234A (en) * | 1984-06-20 | 1988-02-23 | Gould Inc. | Laser-based system for the total repair of photomasks |
WO1989007285A1 (en) * | 1988-01-29 | 1989-08-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
US5302547A (en) * | 1993-02-08 | 1994-04-12 | General Electric Company | Systems for patterning dielectrics by laser ablation |
US5310624A (en) * | 1988-01-29 | 1994-05-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
WO1995006900A1 (fr) * | 1993-09-03 | 1995-03-09 | Hitachi, Ltd. | Procede et appareil de realisation de motifs |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4177474A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | High temperature amorphous semiconductor member and method of making the same |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
US4517223A (en) * | 1982-09-24 | 1985-05-14 | Sovonics Solar Systems | Method of making amorphous semiconductor alloys and devices using microwave energy |
US5329152A (en) * | 1986-11-26 | 1994-07-12 | Quick Technologies Ltd. | Ablative etch resistant coating for laser personalization of integrated circuits |
US5470661A (en) * | 1993-01-07 | 1995-11-28 | International Business Machines Corporation | Diamond-like carbon films from a hydrocarbon helium plasma |
-
1995
- 1995-02-28 IL IL11282695A patent/IL112826A/en not_active IP Right Cessation
-
1996
- 1996-02-27 CA CA002214109A patent/CA2214109A1/en not_active Abandoned
- 1996-02-27 EP EP96908627A patent/EP0812477A4/de not_active Withdrawn
- 1996-02-27 KR KR1019970706003A patent/KR19980702598A/ko not_active Application Discontinuation
- 1996-02-27 JP JP8526446A patent/JPH11502060A/ja active Pending
- 1996-02-27 WO PCT/US1996/002920 patent/WO1996027212A1/en not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4371407A (en) * | 1980-10-28 | 1983-02-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for producing semiconductor device |
US4374179A (en) * | 1980-12-18 | 1983-02-15 | Honeywell Inc. | Plasma polymerized ethane for interlayer dielectric |
JPS5893241A (ja) * | 1981-11-30 | 1983-06-02 | Sony Corp | 半導体装置 |
US4727234A (en) * | 1984-06-20 | 1988-02-23 | Gould Inc. | Laser-based system for the total repair of photomasks |
WO1989007285A1 (en) * | 1988-01-29 | 1989-08-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
US5310624A (en) * | 1988-01-29 | 1994-05-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
US5302547A (en) * | 1993-02-08 | 1994-04-12 | General Electric Company | Systems for patterning dielectrics by laser ablation |
WO1995006900A1 (fr) * | 1993-09-03 | 1995-03-09 | Hitachi, Ltd. | Procede et appareil de realisation de motifs |
Non-Patent Citations (5)
Title |
---|
JANAI M: "Re-engineering ASIC design with LPGAs", PROCEEDINGS EIGHTH ANNUAL IEEE INTERNATIONAL ASIC CONFERENCE AND EXHIBIT (CAT. NO.95TH8087), PROCEEDINGS OF EIGHTH INTERNATIONAL APPLICATION SPECIFIC INTEGRATED CIRCUITS CONFERENCE, AUSTIN, TX, USA, 18-22 SEPT. 1995, ISBN 0-7803-2707-1, 1995, NEW YORK, NY, USA, IEEE, USA, pages 60 - 63, XP002069880 * |
MEIR JANAI: "TECHNOLOGIES FOR ECONOMIC PRODUCTION OF ASICS", SOLID STATE TECHNOLOGY, vol. 36, no. 3, 1 March 1993 (1993-03-01), pages 35 - 36, 38, XP000367056 * |
MORINAKA A ET AL: "Heat-mode lithography with dye deposited films", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MAY 1988, USA, vol. 135, no. 5, ISSN 0013-4651, pages 1275 - 1278, XP002060437 * |
PATENT ABSTRACTS OF JAPAN vol. 007, no. 190 (E - 194) 19 August 1983 (1983-08-19) * |
See also references of WO9627212A1 * |
Also Published As
Publication number | Publication date |
---|---|
CA2214109A1 (en) | 1996-09-06 |
JPH11502060A (ja) | 1999-02-16 |
IL112826A (en) | 1998-09-24 |
WO1996027212A1 (en) | 1996-09-06 |
IL112826A0 (en) | 1995-05-26 |
KR19980702598A (ko) | 1998-08-05 |
EP0812477A1 (de) | 1997-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB9521216D0 (en) | Protctive material | |
DE69506689D1 (en) | Laser | |
IL118094A0 (en) | Laser apparatus | |
DE69603015D1 (en) | Laser | |
IL116438A (en) | Laser sensor | |
EP0744799A3 (de) | Laser | |
GB9501412D0 (en) | Laser apparatus | |
GB2302901B (en) | Cladding material | |
EP0842766A4 (de) | Plattiertes material | |
GB9503301D0 (en) | Laser amplifier | |
EP0726627A3 (de) | Laservorrichtung | |
GB9507829D0 (en) | Pyrotechnic material | |
GB2302443B (en) | Lasers | |
EP0812477A4 (de) | Ein verbesserter laserabscheidbares material | |
GB2302442B (en) | Upconversion laser material | |
AU5109296A (en) | Fragrance material | |
AU5102196A (en) | Fragrance material | |
EP0885685A4 (de) | Lasermarkierungsvorrichtung | |
GB2299680B (en) | Photographic material | |
EP0794600A4 (de) | Laseroszillator | |
IL114120A0 (en) | Improved lasers | |
GB9625114D0 (en) | Cladding material | |
GB2304350B (en) | Protective material | |
GB2310312B (en) | Solid-state laser | |
GB9412258D0 (en) | Laser material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19970828 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): BE DE ES FR GB IT SE |
|
RHK1 | Main classification (correction) |
Ipc: H01L 21/312 |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 19980821 |
|
AK | Designated contracting states |
Kind code of ref document: A4 Designated state(s): BE DE ES FR GB IT SE |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20010901 |