EP0792525B1 - Diode varicap et son procede de fabrication - Google Patents
Diode varicap et son procede de fabrication Download PDFInfo
- Publication number
- EP0792525B1 EP0792525B1 EP96927846A EP96927846A EP0792525B1 EP 0792525 B1 EP0792525 B1 EP 0792525B1 EP 96927846 A EP96927846 A EP 96927846A EP 96927846 A EP96927846 A EP 96927846A EP 0792525 B1 EP0792525 B1 EP 0792525B1
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- European Patent Office
- Prior art keywords
- zone
- layer
- conductivity type
- epitaxial layer
- dopant atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000002019 doping agent Substances 0.000 claims abstract description 50
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 2
- 238000002513 implantation Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66174—Capacitors with PN or Schottky junction, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Definitions
- the invention relates to a method of manufacturing a varicap diode whereby a silicon substrate with an epitaxial layer of a first conductivity type is provided with a first zone through the provision of dopant atoms of a first conductivity type in the epitaxial layer and is provided with a second zone adjoining a surface of the epitaxial layer through the provision of dopant atoms of a second conductivity type opposed to the first in the epitaxial layer, a pn junction being formed between the second zone and the first zone.
- the invention also relates to a varicap diode, a receiver device, and a TV receiver set.
- a varicap diode is a diode with a pn junction which is reverse-biased during use by a reverse voltage across the pn junction.
- the region around the pn junction is depleted of charge carriers in that case and acts as a dielectric of a capacitance.
- the value of this capacitance can be controlled by means of the reverse voltage. The higher the reverse voltage, the larger the depleted region and the lower the capacitance.
- the varicap diode is often used as a variable capacitance in applications where an LC circuit (L coil, C capacitance) is tuned. The circuit can be tuned, for example, to a different frequency in that the capacitance C is changed.
- Varicap diodes are widely used, for example, in receiver devices of TV sets.
- the known method described has the disadvantage that varicap diodes manufactured by the known method require a comparatively high voltage variation in order to obtain a sufficient variation in capacitance.
- a varicap diode manufactured by the known method has a capacitance change of approximately 20 pF for a voltage change of approximately 25 V (see Fig. 5 in US 4,475,117).
- Such a high voltage variation is disadvantageous for many applications, especially for portable applications with battery supplies.
- a special circuit is required then for supplying the required major voltage variation.
- the invention has for its object inter alia to counteract this disadvantage by means of a method of making a varicap diode which has a comparatively great capacitance change accompanying much smaller voltage variations.
- the method is for this purpose characterized in that the second zone is provided through the provision on the surface of a layer of polycrystalline silicon provided with dopant atoms of the second conductivity type, and in that the dopant atoms are diffused from this layer into the epitaxial layer, whereby a pn junction is formed at a distance of less than 0.3 ⁇ m from the polycrystalline silicon.
- a comparatively shallow, sharp pn junction is manufactured by the measure according to the invention, i.e. there is an abrupt transition from material of the second to material of the first conductivity type, the doping profile being very steep, i.e. the concentration of dopant atoms of the first conductivity type drops sharply as a function of the depth below the surface. It is found that a varicap diode with a sharp pn junction having such a doping profile exhibits a much greater capacitance change for much lower reverse voltages across the diode.
- the known varicap diode has a pn junction at a depth of approximately 1 ⁇ m below the surface, while the doping profile has a gradient which is much less steep.
- the polycrystalline silicon layer may be doped in situ in that dopant atoms are added during deposition of the layer. Since the deposition of polycrystalline silicon usually takes place at a comparatively high temperature, however, some diffusion of dopant atoms from the polycrystalline into the epitaxial layer will take place then during deposition already.
- the layer of polycrystalline silicon provided with dopant atoms is provided in that first a non-doped layer of polycrystalline silicon is provided and subsequently the dopant atoms are provided through ion implantation into the layer of polycrystalline silicon, but not into the epitaxial layer. No problems arise in this method as regards diffusion of dopant atoms during deposition of the polycrystalline layer.
- a source layer for forming the second zone in a varicap diode is know from Patent Abstracts of Japan, vol. 11, no. 231 and JP-A-62 47166. It is further noted that it is known to modify the doping profile within the first zone of a varicap diode from Patent Abstracts of Japan, vol. 5, no. 133 and JP-A-56 69869. Finally, it is noted that the use of a layer of polycrystalline silicon as a source layers for making various zone's within a bipolar transistor is know from US-A-4 569 123.
- Dopant atoms of the first conductivity type used may be, for example, phosphorus, antimony, or arsenic atoms.
- the dopant atoms of the first conductivity type comprise arsenic atoms.
- Arsenic atoms diffuse with comparatively great difficulty, so that a doping profile once provided is not disturbed by diffusion, and it is comparatively simple to manufacture a doping profile with a very steep gradient.
- a comparatively deep third zone is provided in the epitaxial layer through the provision of dopant atoms of a first conductivity type in the epitaxial layer, after which a comparatively shallow first zone is provided in said third zone.
- the combination of a shallow first zone and a deep third zone of a first conductivity type with different implantations provides more possibilities of choosing a doping gradient such that a desired capacitance:voltage curve is achieved.
- the desirability of this third zone is determined inter alia by the voltage:capacitance variation required for the application.
- the first zone usually has a steep doping profile, whereas the deep third zone provides a more fluent gradient of the capacitance as a function of the reverse voltage at higher voltages, which has a favorable effect on the tuning behavior of a receiver device in which the varicap diode is used.
- the first and second zones may be provided by means of different masks.
- the first zone and a third zone, if present, are provided through an opening in a mask, after which said opening is enlarged without the use of an additional mask, and the second zone is provided through said enlarged opening. It is possible in that case to provide the two zones mutually aligned by means of only one mask.
- the mask is a standard mask which is provided by means of photolithographic techniques and an etching process.
- the opening in the mask may be enlarged, for example, in that material of the mask is etched away in an isotropic etching process. The thickness of the mask becomes smaller then and the opening in the mask greater.
- the invention also relates to a varicap diode with a substrate, an epitaxial silicon layer of a first conductivity type disposed thereon, a first zone situated in the epitaxial layer and containing dopant atoms of the first conductivity type but more strongly doped than the epitaxial layer, and a second surface zone containing dopant atoms of a second conductivity type opposed to the first and forming a pn junction with the first zone.
- Such a varicap diode is known from US Patent No. 4,475,117.
- the known varicap diode described therein has the disadvantage that a comparatively great voltage variation is necessary for obtaining a sufficient variation in capacitance.
- the known varicap diode has a capacitance change of approximately 20 pF for a voltage variation of approximately 33 V.
- Such a great voltage variation is disadvantageous in many applications, especially portable applications with battery supplies.
- a special circuit is necessary in that case which can supply the required major voltage variation.
- the invention has for its object inter alia to counteract said disadvantage by supplying a varicap diode which has a comparatively great capacitance change accompanying much lower voltages.
- the varicap diode is for this purpose characterized in that the second surface zone is covered with a polycrystalline silicon layer doped with the dopant atoms of the second conductivity type, the pn junction being at a distance of less than 0.3 ⁇ m from the polycrystalline silicon. It is achieved thereby that the varicap diode according to the invention will show a much greater capacitance change for much lower reverse voltages across the diode.
- the varicap diode according to the invention may be used to advantage in a receiver device of a TV set. Such a receiver device is tuned to a signal received through an antenna.
- a tuned LC circuit is often used in the receiver device, provided with a varicap diode as a variable tuning element C for tuning the receiver device to the antenna signal.
- the invention has for its object to provide a receiver device which does not require a high supply voltage but nevertheless can be tuned over a wide frequency range.
- the receiver device according to the invention is for this purpose characterized in that the receiver device is provided with a varicap diode according to the invention or with a varicap diode manufactured by a method according to the invention.
- a comparatively low supply voltage can suffice for such a receiver device because the varicap diode needs only a small reverse voltage variation for achieving a comparatively great capacitance change.
- the application also relates to a TV set provided with a receiver device according to the invention.
- a TV set does not require a special device for generating a comparatively high supply voltage of approximately 33 V.
- the TV set as a result is simpler and more energy-efficient than known TV sets. This is a major advantage, especially in the case of portable TV sets which are battery-operated.
- Figs. 1 to 5 show various stages in the manufacture of a varicap diode according to the invention.
- Fig. 1 shows a silicon substrate 1, in this example a low-ohmic, Sb-doped n ++ silicon wafer with an epitaxial layer 2 of a first conductivity type, an n-type in this example.
- Varicap diodes are manufactured in the embodiments suitable for use in a receiver device of a TV set for the VHF Low Band: 48-170 MHz, the VHF Mid Band: 170-460 MHz, and for the UHF Band: 470-860 MHz.
- the thickness and doping of the epitaxial layer are determined by the application (capacitance:reverse voltage curve) and by the desired low series resistance of the varicap diode (see Table 1).
- the thicknesses given in Table 1 are thicknesses at the start of manufacture.
- the eventual thicknesses of the epitaxial layer in the finished varicap diode are smaller owing to oxidation of the epitaxial layer and diffusion of dopant atoms from the substrate into the epitaxial layer during manufacture of the varicap diode.
- phosphorus doping and layer thickness of the epitaxial layer 2 of varicap diodes suitable for different frequency ranges.
- Frequency band Layer thickness [ ⁇ m] Dose [at./cm 2 ] VHF Low Band 4.0 1*10 15 VHF Mid Band 3.4 31*10 15 UHF Band 2.8 5*10 15
- the epitaxial layer 2 is provided with a first zone 3 through the provision of dopant atoms of a first conductivity type in the epitaxial layer 2 (see Fig. 2).
- a masking layer 4 is for this purpose provided on the surface of the epitaxial layer 2, in this example a 1.2 ⁇ m thick silicon oxide (field oxide) layer. This layer 4 is patterned by a standard lithographic process, whereby a mask with an opening 5 is formed. Then a 30 nm thick scattering oxide 6 is grown with the purpose of achieving a more uniform distribution of dopant atoms in subsequent implantations.
- a third zone 7 is first formed through a comparatively deep implantation of dopant atoms with an implantation energy of 80 keV through the opening 5.
- Dopant atoms, implantation doses, and heat treatment times and temperatures are given in Table 2 below.
- the comparatively shallow first zone 3 is provided in the third zone 7 through implantation of arsenic atoms through the opening 5. Implantation doses and energies are given in Table 3 below. dose and implantation energy for formation of first zone 3 for varicap diodes suitable for different frequency ranges. Frequency band dose implantation energy [keV] VHF Low Band 4.3*10 13 70 VHF Mid Band 2.6*10 13 80 UHF Band 2.3*10 13 80
- the first zone 3 is then given an aftertreatment at 900 °C for 30 minutes.
- a second zone 8 of a second conductivity type is provided in the first zone 3.
- the first zone 3 and the second zone 8 may be provided by means of different masks.
- the first zone 3 is provided through an opening 5 in a mask 4, after which the opening 5 is enlarged into an enlarged opening 5' without the use of an additional mask, whereupon the second zone 8 is provided through the enlarged opening 5'. It is thus possible to provide the two zones 3 and 8 mutually aligned by means of only one mask 4.
- the opening 5 in the mask 4 may be enlarged in that material is etched away from the mask in an isotropic etching process.
- the thickness of the oxide of the mask 4 decreases from 1.2 to 0.5 ⁇ m during this, and the opening 5 in the mask becomes approximately 1.4 ⁇ m greater (see Fig. 3).
- a second zone 8 adjoining a surface 12 of the epitaxial layer is provided through the enlarged opening 5' in that dopant atoms of a second conductivity type opposed to the first are introduced into the epitaxial layer, whereby a pn junction 15 is formed between the second zone and the first zone.
- the second zone is provided in that a layer 9 of polycrystalline silicon provided with dopant atoms of the second conductivity type is applied over the surface 12 (see Fig. 4).
- a 300 nm thick, non-doped layer 9 of polycrystalline silicon is first provided on the surface 12 of the epitaxial layer 2. Then boron doping atoms are provided in the layer 9 of polycrystalline silicon, but not in the epitaxial layer 2.
- boron ions are implanted into the polycrystalline silicon layer by ion implantation with an implantation energy of 30 keV and a dose of 5*10 15 /cm 2 .
- the implantation energy of the boron ions must be below 40 keV for this thickness of the polycrystalline silicon, because part of the boron will be implanted into the epitaxial layer 2 at implantation energies above 40 keV already.
- the doped layer 9 is patterned by standard lithographic techniques. Boron doping atoms are diffused into the epitaxial layer 2 from the doped layer 9.
- An additional advantage is obtained when the dopant atoms of the second conductivity type are diffused from the polycrystalline layer into the epitaxial layer at a temperature of 850 °C or lower. A shallow pn junction is comparatively easy to realize at this comparatively low temperature. The diffusion time becomes short at a higher diffusion temperature, which renders the diffusion process difficult to control and dopant atoms may readily diffuse too deeply.
- a heat treatment of approximately 40 minutes at 850 °C is used, whereby a pn junction 15 is formed at a distance of less than 0.3 ⁇ m from the polycrystalline silicon 9, here a distance of 0.06 ⁇ m (see Fig. 5).
- a 0.5 ⁇ m thick aluminum layer 10 is provided on the surface and patterned by standard lithographic and etching techniques. This aluminum layer 10 serves to contact the polysilicon layer 9.
- the device is further provided with a passivating layer 11 of 0.75 ⁇ m silicon nitride in a standard manner by a PECVD process. Then the substrate is subdivided into individual varicap diodes which are each given a final mounting in an envelope.
- Fig. 5 shows a varicap diode with a substrate 1, an epitaxial silicon layer 2 of a first conductivity type disposed thereon, a first zone 3 in the epitaxial layer and containing dopant atoms of the first conductivity type, but doped more strongly than the epitaxial layer 2, and a second surface zone 8 with dopant atoms of a second conductivity type opposed to the first, forming a pn junction 15 with the first zone.
- the varicap diode is characterized in that the second surface zone 8 is covered with a polycrystalline silicon layer 9 doped with the dopant atoms of the second conductivity type, while the pn junction 15 is at a distance of less than 0.3 ⁇ m from the polycrystalline silicon 9.
- Fig. 6 shows capacitance:voltage characteristics of varicap diodes according to the invention suitable for frequency ranges in the VHF Low (curve 20), VHF Mid (curve 21), and UHF (curve 22) bands.
- a capacitance C of a varicap diode is plotted on the vertical axis in the Figure, and the reverse voltage V s across the varicap diode on the horizontal axis.
- the varicap diodes according to the invention show a capacitance variation of approximately 40 pF for a voltage variation of approximately 8 V across the varicap diode.
- Varicap diodes according to the invention thus have a great capacitance change for comparatively low reverse voltages across the diode.
- the varicap diodes according to the invention have a series resistance which is practically equal to that of known varicap diodes.
- capacitance ratio capacitance variation/reverse voltage variation
- varicap diodes also have such a low capacitance ratio, but in that case the series resistance of the varicap diode is comparatively high.
- the varicap diode according to the invention has a low series resistance owing to the adaptation of the thickness of the epitaxial layer.
- Certain techniques were mentioned above for manufacturing the varicap diode. This does not mean that the method according to the invention can only be implemented by such techniques. Thus, for example, implantation of dopant atoms into the polycrystalline layer may be replaced by an alternative technique such as deposition in a low-temperature CVD process, for example at 750 °C. More details on known techniques may be found in handbooks such as S.M. Sze: "VLSI Technology", Mc-Graw-Hill Book Company and S. Wolf: “Silicon Processing for the VLSI Era", Vols. 1, 2, Lattice Press.
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
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- Recrystallisation Techniques (AREA)
Abstract
Claims (10)
- Procédé de fabrication d'une diode varicap, un substrat en silicium (1) avec une couche épitaxiale (2) d'un premier type de conductivité étant pourvue d'une première zone (3) par l'application d'atomes de dopant d'un premier type de conductivité dans la couche épitaxiale (2) et étant pourvue d'une deuxième zone (8) contiguë à une surface de la couche épitaxiale (2) par l'application d'atomes de dopant d'un deuxième type de conductivité opposé au premier dans la couche épitaxiale (2), une jonction pn étant formée entre la deuxième zone (8) et la première zone (3), la deuxième zone (8) étant formée par le dépôt sur la surface de la couche épitaxiale (2) d'une couche de source (9) contenant les atomes de dopant du deuxième type de conductivité qui constituent par diffusion à partir de la couche de source (9) la deuxième zone (8), cas dans lequel il est choisi pour la couche de source (9) une couche (9) constituée de silicium polycristallin et qu'il est effectué la diffusion des dopants du deuxième type de conductivité à partir de la couche 9 constituée de silicium polycristallin dans la couche épitaxiale (2) de façon que la jonction pn (15) soit formée à une distance espacée moins de 0,3 µm de la couche (9) constituée de silicium polycristallin.
- Procédé selon la revendication 1, caractérisé en ce qu'il est déposé la couche (9) constituée de silicium polycristallin pourvue d'atomes de dopant du fait qu'il est d'abord déposé une couche non dopée (9) constituée de silicium polycristallin et qu'il est appliqué ensuite les atomes de dopant par implantation d'ions dans la couche (9) constituée de silicium polycristallin, mais pas dans la couche épitaxiale (2).
- Procédé selon l'une quelconque des revendications précédentes 1 à 2, caractérisé en ce que les atomes de dopant du premier type de conductivité comportent des atomes d'arsenic.
- Procédé selon l'une quelconque des revendications précédentes 1 à 3, caractérisé en ce que les atomes de dopant du deuxième type de conductivité sont diffusés à partir de la couche (9) constituée de silicium polycristallin dans la couche épitaxiale (2) à une température égale ou inférieure à 850°C.
- Procédé selon l'une quelconque des revendications précédentes 1 à 4,
caractérisé en ce que, avant que la deuxième zone (8) ne soit appliquée, une troisième zone relativement profonde (7) est appliquée dans la couche épitaxiale (2) par l'application d'atomes de dopant d'un premier type de conductivité dans la couche épitaxiale (2), après quoi la première zone relativement peu profonde (3) est appliquée dans ladite troisième zone (7). - Procédé selon l'une quelconque des revendications précédentes 1 à 5, caractérisé en ce que la première zone (3) est appliquée par l'intermédiaire d'une ouverture (5) présente dans un masque (4), après quoi ladite ouverture (5) est agrandie sans l'utilisation d'un masque additionnel, et en ce que la deuxième zone (8) est appliquée par l'intermédiaire de ladite ouverture agrandie (5').
- Procédé selon l'une quelconque des revendications précédentes 1 à 6, caractérisé en ce que la couche (9) constituée de silicium polycristallin est recouverte d'un conducteur de connexion (10).
- Diode varicap avec un substrat (1), une couche épitaxiale (2) d'un premier type de conductivité y étant déposée, une première zone (3) étant située dans la couche épitaxiale (2) et contenant des atomes de dopant du premier type de conductivité mais étant plus fortement dopée que la couche épitaxiale (2), et une deuxième zone (8) étant contiguë à la surface de la couche épitaxiale (2) et contenant des atomes de dopant d'un deuxième type de conductivité opposé au premier type de conductivité et constituant une jonction pn (15) avec la première zone (3), la deuxième zone (8) étant recouverte d'une couche 9 constituée de silicium polycristallin dopée des atomes de dopant du deuxième type de conductivité, caractérisée en ce que la jonction pn (15) se situe à une distance espacée moins de 0,3 µm de la couche (9) constituée de silicium polycristallin, cette dernière (9) étant recouverte d'un conducteur de connexion (10) de la diode varicap.
- Dispositif récepteur pour être utilisé dans un poste de télévision, caractérisé en ce que le dispositif récepteur est pourvu d'une diode varicap selon la revendication 8 ou d'une diode varicap fabriquée suivant un procédé selon l'une quelconque des revendications 1 à 7.
- Poste de télévision, caractérisé en ce que le poste de télévision est pourvu d'un dispositif récepteur selon la revendication 9.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96927846A EP0792525B1 (fr) | 1995-09-18 | 1996-09-11 | Diode varicap et son procede de fabrication |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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EP95202519 | 1995-09-18 | ||
EP95202519 | 1995-09-18 | ||
PCT/IB1996/000921 WO1997011498A1 (fr) | 1995-09-18 | 1996-09-11 | Diode varicap et son procede de fabrication |
EP96927846A EP0792525B1 (fr) | 1995-09-18 | 1996-09-11 | Diode varicap et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
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EP0792525A1 EP0792525A1 (fr) | 1997-09-03 |
EP0792525B1 true EP0792525B1 (fr) | 2001-12-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP96927846A Expired - Lifetime EP0792525B1 (fr) | 1995-09-18 | 1996-09-11 | Diode varicap et son procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (1) | US5854117A (fr) |
EP (1) | EP0792525B1 (fr) |
JP (1) | JPH10509563A (fr) |
KR (1) | KR970707590A (fr) |
CN (1) | CN1165586A (fr) |
DE (1) | DE69617628T2 (fr) |
WO (1) | WO1997011498A1 (fr) |
Families Citing this family (28)
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---|---|---|---|---|
SE511721C2 (sv) * | 1997-06-18 | 1999-11-15 | Ericsson Telefon Ab L M | Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning |
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CN100353567C (zh) * | 2003-11-19 | 2007-12-05 | 联华电子股份有限公司 | 制作可变电容的方法 |
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WO2006022623A1 (fr) * | 2004-07-22 | 2006-03-02 | Precision Dynamics Corporation | Dispositif de stockage de charge redresseur equipe d'un capteur |
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CN101834134B (zh) * | 2009-03-12 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | 提高金属-氧化物半导体变容二极管的品质因子的方法 |
DE102009059873A1 (de) | 2009-12-21 | 2011-06-22 | Epcos Ag, 81669 | Varaktor und Verfahren zur Herstellung eines Varaktors |
KR101138407B1 (ko) * | 2010-03-15 | 2012-04-26 | 고려대학교 산학협력단 | 버랙터가 구비된 반도체 집적 회로, 및 그 제조 방법 |
RU2447541C1 (ru) * | 2010-12-03 | 2012-04-10 | Федеральное государственное унитарное предприятие "Научно-исследовательский институт микроприборов-К" | Мдп-варикап |
RU2569906C1 (ru) * | 2014-08-26 | 2015-12-10 | Акционерное общество "Научно-исследовательский институт микроприборов-К" (АО "НИИМП-К") | Многоэлементный мдп варикап |
KR102013867B1 (ko) | 2015-08-05 | 2019-08-26 | 한국전자통신연구원 | 병렬 처리 장치 및 방법 |
RU2614663C1 (ru) * | 2015-12-29 | 2017-03-28 | Общество с ограниченной ответственностью "Лаборатория Микроприборов" | Варикап и способ его изготовления |
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DE2833319C2 (de) * | 1978-07-29 | 1982-10-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Kapazitätsdiode |
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JPS6247166A (ja) * | 1985-08-26 | 1987-02-28 | Toshiba Corp | 半導体装置の製造方法 |
JPS6459874A (en) * | 1987-08-31 | 1989-03-07 | Toko Inc | Manufacture of variable-capacitance diode |
US5197077A (en) * | 1992-02-28 | 1993-03-23 | Mcdonnell Douglas Corporation | Low divergence laser |
-
1996
- 1996-09-11 CN CN96191080A patent/CN1165586A/zh active Pending
- 1996-09-11 WO PCT/IB1996/000921 patent/WO1997011498A1/fr not_active Application Discontinuation
- 1996-09-11 KR KR1019970703314A patent/KR970707590A/ko not_active Application Discontinuation
- 1996-09-11 JP JP9512517A patent/JPH10509563A/ja active Pending
- 1996-09-11 EP EP96927846A patent/EP0792525B1/fr not_active Expired - Lifetime
- 1996-09-11 DE DE69617628T patent/DE69617628T2/de not_active Expired - Lifetime
- 1996-09-17 US US08/715,059 patent/US5854117A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5854117A (en) | 1998-12-29 |
DE69617628T2 (de) | 2002-08-14 |
EP0792525A1 (fr) | 1997-09-03 |
JPH10509563A (ja) | 1998-09-14 |
KR970707590A (ko) | 1997-12-01 |
WO1997011498A1 (fr) | 1997-03-27 |
DE69617628D1 (de) | 2002-01-17 |
CN1165586A (zh) | 1997-11-19 |
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