EP0766254A3 - Zum Speichern einer variablen Resolution fähige Mehrzustandsspeicheranordnung - Google Patents

Zum Speichern einer variablen Resolution fähige Mehrzustandsspeicheranordnung Download PDF

Info

Publication number
EP0766254A3
EP0766254A3 EP96307109A EP96307109A EP0766254A3 EP 0766254 A3 EP0766254 A3 EP 0766254A3 EP 96307109 A EP96307109 A EP 96307109A EP 96307109 A EP96307109 A EP 96307109A EP 0766254 A3 EP0766254 A3 EP 0766254A3
Authority
EP
European Patent Office
Prior art keywords
data
bits
address
stored
audio data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP96307109A
Other languages
English (en)
French (fr)
Other versions
EP0766254B1 (de
EP0766254A2 (de
Inventor
Takashi Uchino
Nozomu Nambu
Akio Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP25144895A external-priority patent/JPH0991973A/ja
Priority claimed from JP25144795A external-priority patent/JPH0991972A/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of EP0766254A2 publication Critical patent/EP0766254A2/de
Publication of EP0766254A3 publication Critical patent/EP0766254A3/de
Application granted granted Critical
Publication of EP0766254B1 publication Critical patent/EP0766254B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5644—Multilevel memory comprising counting devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
EP96307109A 1995-09-28 1996-09-27 Zum Speichern einer variablen Resolution fähige Mehrzustandsspeicheranordnung Expired - Lifetime EP0766254B1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP251447/95 1995-09-28
JP251448/95 1995-09-28
JP25144895A JPH0991973A (ja) 1995-09-28 1995-09-28 不揮発性多値メモリ装置
JP25144895 1995-09-28
JP25144795A JPH0991972A (ja) 1995-09-28 1995-09-28 不揮発性多値メモリ装置
JP25144795 1995-09-28

Publications (3)

Publication Number Publication Date
EP0766254A2 EP0766254A2 (de) 1997-04-02
EP0766254A3 true EP0766254A3 (de) 1998-09-02
EP0766254B1 EP0766254B1 (de) 2001-12-19

Family

ID=26540199

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96307109A Expired - Lifetime EP0766254B1 (de) 1995-09-28 1996-09-27 Zum Speichern einer variablen Resolution fähige Mehrzustandsspeicheranordnung

Country Status (4)

Country Link
US (1) US5768187A (de)
EP (1) EP0766254B1 (de)
KR (1) KR100239870B1 (de)
DE (1) DE69618129T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
JPH11224491A (ja) * 1997-12-03 1999-08-17 Sony Corp 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード
KR100339023B1 (ko) * 1998-03-28 2002-09-18 주식회사 하이닉스반도체 문턱전압을조절할수있는플래쉬메모리장치의센싱회로
US6038166A (en) * 1998-04-01 2000-03-14 Invox Technology High resolution multi-bit-per-cell memory
EP0961287B1 (de) * 1998-05-27 2003-11-26 STMicroelectronics S.r.l. Nichtflüchtiger Speicher mit grosser Kapazität
JP4090570B2 (ja) * 1998-06-02 2008-05-28 株式会社ルネサステクノロジ 半導体装置、データ処理システム及び不揮発性メモリセルの閾値変更方法
EP1193715A1 (de) * 2000-09-20 2002-04-03 STMicroelectronics S.r.l. Nichtflüchtige Speicheranordnung mit Teilen von verschiedener Zuverlässigkeit, Zugriffzeit und Kapazität
US6807106B2 (en) 2001-12-14 2004-10-19 Sandisk Corporation Hybrid density memory card
US7336531B2 (en) 2004-06-25 2008-02-26 Micron Technology, Inc. Multiple level cell memory device with single bit per cell, re-mappable memory block
US7639542B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
US7460398B1 (en) * 2007-06-19 2008-12-02 Micron Technology, Inc. Programming a memory with varying bits per cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294202A2 (de) * 1987-06-03 1988-12-07 Kabushiki Kaisha Toshiba Vorrichtung zum digitalen Speichern von Schall
WO1995034074A1 (en) * 1994-06-02 1995-12-14 Intel Corporation Dynamic single to multiple bit per cell memory
US5515317A (en) * 1994-06-02 1996-05-07 Intel Corporation Addressing modes for a dynamic single bit per cell to multiple bit per cell memory
US5541886A (en) * 1994-12-27 1996-07-30 Intel Corporation Method and apparatus for storing control information in multi-bit non-volatile memory arrays

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890259A (en) * 1988-07-13 1989-12-26 Information Storage Devices High density integrated circuit analog signal recording and playback system
JPH0279300A (ja) * 1988-09-16 1990-03-19 Sanyo Electric Co Ltd 音声録音再生装置
JPH0457294A (ja) * 1990-06-22 1992-02-25 Ricoh Co Ltd プログラム可能な不揮発性半導体メモリ装置
US5623436A (en) * 1993-06-17 1997-04-22 Information Storage Devices Method and apparatus for adjustment and control of an iterative method of recording analog signals with on-chip trimming techniques

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294202A2 (de) * 1987-06-03 1988-12-07 Kabushiki Kaisha Toshiba Vorrichtung zum digitalen Speichern von Schall
WO1995034074A1 (en) * 1994-06-02 1995-12-14 Intel Corporation Dynamic single to multiple bit per cell memory
US5515317A (en) * 1994-06-02 1996-05-07 Intel Corporation Addressing modes for a dynamic single bit per cell to multiple bit per cell memory
US5541886A (en) * 1994-12-27 1996-07-30 Intel Corporation Method and apparatus for storing control information in multi-bit non-volatile memory arrays

Also Published As

Publication number Publication date
DE69618129D1 (de) 2002-01-31
DE69618129T2 (de) 2002-06-13
EP0766254B1 (de) 2001-12-19
KR100239870B1 (ko) 2000-03-02
EP0766254A2 (de) 1997-04-02
KR970017669A (ko) 1997-04-30
US5768187A (en) 1998-06-16

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