EP0741402B1 - Tubes à décharge électrique ou lampes à décharge électrique, écran plat d'affichage, cathode à basse température et leur procédé de fabrication - Google Patents

Tubes à décharge électrique ou lampes à décharge électrique, écran plat d'affichage, cathode à basse température et leur procédé de fabrication Download PDF

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Publication number
EP0741402B1
EP0741402B1 EP96201180A EP96201180A EP0741402B1 EP 0741402 B1 EP0741402 B1 EP 0741402B1 EP 96201180 A EP96201180 A EP 96201180A EP 96201180 A EP96201180 A EP 96201180A EP 0741402 B1 EP0741402 B1 EP 0741402B1
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EP
European Patent Office
Prior art keywords
low
temperature
cathode
cathodes
top coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP96201180A
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German (de)
English (en)
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EP0741402A2 (fr
EP0741402A3 (fr
Inventor
Dr. c/o Philips Patentverw. GmbH Gärtner Georg
Dr. c/o Philips Patentverw. GmbH Geittner Peter
Dr. c/o Philips Patentverw. GmbH Lydtin Hans
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Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Intellectual Property and Standards GmbH
Koninklijke Philips Electronics NV
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Publication of EP0741402A2 publication Critical patent/EP0741402A2/fr
Publication of EP0741402A3 publication Critical patent/EP0741402A3/fr
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Publication of EP0741402B1 publication Critical patent/EP0741402B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/04—Electrodes; Screens; Shields
    • H01J61/06—Main electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles

Definitions

  • the invention relates to an electric discharge tube or discharge lamp one or more low temperature cathodes, a flat screen with one or more low temperature cathodes, one low temperature cathode and one Process for the production of the low temperature cathode.
  • the present invention relates, inter alia, to flat screens with active systems where the screen does not work with the light of the surroundings like the liquid crystal screens, but shines itself. This includes the plasma screen and the flat tube.
  • Flat screens were developed for the three market segments of office automation, audio / video technology as well as navigation and entertainment.
  • the mobile applications are particularly noteworthy, starting with notebook computers, personal digital assistants, fax machines and mobile phones.
  • the flat screens should not only be used in camcorders, but also in television sets and monitors.
  • the third area includes flat screens as monitors for navigation systems in cars and airplanes, but also the displays of game consoles.
  • the large space requirement of the Braun tube is a disadvantage. He will causes all electrons to be provided from a single cathode and can be brought to the desired position of the fluorescent screen via deflection units and are responsible for all pixels.
  • the cathodes of this conventional one Cathode ray tubes are hot cathodes ("thermionic cathodes"). Electron beam generation is based on the glow emission.
  • the conventional heatable Cathode is e.g. from a nickel tube, on the front of which a special one easily electron-emitting oxide layer, e.g. made of barium oxide.
  • the heating wire embedded in the nickel tube insulates the cathode about 1200 Kelvin (900 ° C) so that electrons from the oxide layer into the vacuum be "steamed" out of the tube.
  • the flat screens on the other hand, have the electrons in several wire cathodes, Ribbon cathodes or generated in flat field emitters. Every cathode is therefore only responsible for a few pixels.
  • cathodes for all types of flat screens a key technology. Considerable efforts have already been made to cathodes adapted to the flat screen technology and new cathode materials to develop.
  • Tips field emitter Microtip emitter
  • AC cathodes avalanche Cold Cathodes
  • WO-A-9 423 571 which is a microcrystalline Describes amorphous diamond emission material.
  • a disadvantage of the tip field emitter cathodes is burnout individual peaks and the high current noise of the individual peaks.
  • AC cathode have the disadvantage that their emission is extremely localized and high Adjustment accuracy in cathode positioning required.
  • Another aspect of the invention relates to a flat screen with a improved cathode and an improved cathode.
  • the object is achieved by an electrical discharge tube or discharge lamp with one or more low-temperature cathodes, the one Bracket, possibly with heating or cooling, one on the bracket applied conductive sub-layer, possibly a substrate with dispensing material, and a top layer with a nanostructure made of ultrafine particles, the top layer having a surface layer made of an emission material has several components formed emitter complex.
  • Such discharge tubes or discharge lamps are characterized by high Reliability and a long service life under normal loads.
  • the emission is stable, this favors a constant image quality throughout Lifetime of the discharge lamp or discharge tube.
  • the invention Discharge tubes or discharge lamps have short switching times and offer that Advantage that their construction is simplified and their energy consumption is low.
  • a preferred embodiment of the discharge tubes or Discharge lamps are characterized in that they have a grid control electrode includes.
  • a flat screen according to the invention contains one or more low temperature cathodes, a bracket, possibly with heating or cooling, a conductive sub-layer applied to the holder, optionally a Substrate with dispensing material, and a top layer with a nanostructure ultrafine particles, the top layer being a surface layer made of a Has emitter complex formed with multiple components, include.
  • a flat screen according to the invention is easy to manufacture because of the manufacturing no submicron lithography is required. It has low energy consumption, it is brighter and can operate within wide temperature ranges of the ambient temperature operated from -30 ° C to 100 ° C. It has a very good resolution and is suitable for black and white screens and color screens.
  • a low-temperature cathode according to the invention is composed of one Bracket, possibly with heating or cooling, one on the bracket applied conductive sub-layer, possibly a substrate with dispensing material, and a top layer with a nanostructure made of ultrafine particles, wherein the cover layer is a surface layer made of an emission material with multiple components formed emitter complex.
  • the low-temperature cathode after the Invention is characterized in that it is for an operating temperature is prepared between 20 ° C and 500 ° C.
  • the low-temperature cathode according to the invention can be used on the one hand as a real cold cathode and is particularly well suited as a cold controllable electron emitter for flat displays.
  • the threshold field strength can be reduced to almost zero.
  • 500 ° C that is 250 ° C below the operating temperature of oxide wire cathodes, the current density of 0.1 A / cm 2 required for line cathodes is already achieved.
  • the emission material comprises a first component, the metals, especially refractory metals, and their alloys, contains a second component, the scandium, yttrium, lathan, the lanthanides, or actinides, and / or their compounds, in particular their oxides, contains and / or a third Component that contains alkaline earths and / or their compounds.
  • An emitter complex is formed from these components during the formation a particularly low work function.
  • the emission material comprises as the first component tungsten, as the second component oxidic compounds of the Scandiums and as third components oxidic compounds of barium.
  • the components of the emission material individually or together in the lower layer and / or the substrate and / or the cover layer are included. In this way, a reservoir of emission material be provided to form the emitter complex.
  • the emitter complex formed has a work function ⁇ 2.8 eV Has.
  • a low-temperature cathode which is characterized by this, has particular advantages is that the ultrafine particles have a grain size of 1 to 100 nm. They are particularly well suited as field emitters because they have surface structures and Surface modulations from particles in the diameter range from 1 to 100 nm have, i.e. relatively small radii of curvature in dense particle and tip distribution have on the macroscopic surface.
  • the nanostructure of the cover layer is nanocrystalline or nanoamorphic and is optionally nanoporous and the structure size 1 to 1000 nm is.
  • the invention also has the task of a manufacturing method for the invention To provide low-temperature cathodes.
  • this object is achieved by a method in which first step a pre-body with a holder, with one on the holder applied conductive sub-layer, optionally with a substrate Dispensing material and with a top layer with a nanostructure made of ultra-fine Particles, and the components of the emission material individually or together in the lower layer and / or the substrate and / or the cover layer contains, is produced and in a second step the emitter complex as Surface layer is formed on the top layer.
  • This method creates very uniformly emitting low-temperature cathodes get their emission properties, especially the cold emission scatters little.
  • the residual gas pressure is 10 10 -4 mbar and the residual gas contains noble gases, nitrogen, hydrogen and / or oxygen, each with a partial pressure of 10 10 -5 mbar.
  • a method is further preferred in which the formation by a Sintering treatment at a temperature> 500 ° C and under vacuum or Gas atmosphere containing noble gases, nitrogen, hydrogen and / or oxygen, he follows.
  • the top layer be made with an ultrafine nanostructure Particles is produced by laser ablation.
  • laser ablation deposition be performed under vacuum he follows. This results in a particularly thin and even top layer.
  • Fig. 1 shows the current-voltage characteristics of a low-temperature cathode according to the invention at 300 ° C, 200 ° C and room temperature.
  • An electric discharge tube or discharge lamp consists of four functional groups, electron beam generation, beam focusing, beam deflection and the fluorescent screen.
  • the electron gun of the discharge tubes according to the invention or discharge lamps contains an arrangement of one or more low-temperature cathodes.
  • the electron gun system a point cathode or a system of one or more wire cathodes, flat ribbon cathodes or be flat cathodes.
  • Wire cathodes, ribbon cathodes and Area cathodes do not have to be activated over their entire area, they can the active top layer is only contained in individual surface segments.
  • the electron gun can also be a grid control electrode included, each of one of several of the low-temperature cathodes of the invention or one or more surface segments of a low-temperature cathode can be controlled.
  • a grid control electrode included, each of one of several of the low-temperature cathodes of the invention or one or more surface segments of a low-temperature cathode can be controlled.
  • an electric field strength E with values of 5 V / ⁇ ⁇ E ⁇ 15 V / ⁇ m is applied and the Emission of these segments or single cathodes by changing the field strength controlled.
  • a flat panel display according to the invention can be a modified cathode ray tube, a flat tube, or its variation, the field emitter display.
  • the invention relates to a field emitter display.
  • Field emitter displays are a modification of the cathode ray tubes. Both use one high energy electron beam to activate light emitting phosphors and to create an image. With the conventional cathode ray tube, a single one touches Electron beam from each of the three fairly large electron guns - one each for each color - one after the other from the many picture elements (pixels). On the other hand provides the electron generation system of a field emitter display with countless small ones Electron sources are available, one for each pixel.
  • the field emitter display according to the invention can thus have the following structure to have: Two glass plates, an anode plate and a cathode plate are by spacers Cut.
  • the cathode plate has metallic conductive strips with a thin layer of cold cathode material according to the invention are covered.
  • the Anode plate has similar stripes that have a transparent conductor, e.g. out doped tin oxide, as a base layer and as a top layer with a layer a phosphor.
  • Anode plate and cathode plate are with spacers interconnected, with the cathode and anode strips at 90 ° to each other turned and facing each other. The two plates become vacuum tight connected. On the outside an electronic circuit is attached, which allows that each strip can be controlled independently.
  • the principle of this embodiment is that of a matrix controlled diode.
  • the flat screen according to the invention can a flat tube containing a series of linear wire cathodes which a beam of rays is generated, each individual beam a small rectangular area of the screen is assigned.
  • the low temperature cathodes according to the invention can be of their type Be point cathodes or wire cathodes. Particularly advantageous properties is achieved, however, if the cathodes according to the invention are used as surface cathodes are trained. To do this, they can be applied to a flat ribbon substrate, or on a plate through which emitting cathode strips or segments insulating strips are separated. Also a type with a large "emitter lawn" is possible.
  • the holder can be a silicon wafer or a glass plate, e.g. for a Field emitter display.
  • the holder can also be a wire, e.g. for flat Screen tubes with multiple cathode wires.
  • the holder also from the well-known metal tubes made of nickel, molybdenum or similar. exist, which is equipped with a heating coil that allows the cathode Operating temperatures up to 500 ° C, especially at 200 ° C to 300 ° C.
  • the conductive underlayer is usually made of a metal, e.g. Tungsten. It can also consist of several layers of metal, e.g. from a layer of tungsten and a tungsten / rhenium layer.
  • the substrate in the sense of the invention can be a porous tungsten layer, as is known from conventional I-cathodes.
  • Such porous tungsten layers can contain rhenium, iridium, osmium, ruthenium, tantalum, molybdenum or scandium oxide in the laminate.
  • These porous layers with a percolation structure are produced by powder metallurgy. They contain a barium compound in the pores of the layer as a source of barium.
  • the top layer is covered with an active surface layer that has a very low work function. This layer is very thin, on the order of a monolayer, and contains an emitter complex that contains barium, scandium and oxygen.
  • the substrate layer is omitted.
  • the cover layer contains tungsten, which is alloyed with rhenium, osmium, optionally also with iridium, ruthenium, tantalum, and / or molybdenum. It also contains scandium oxide or scandium oxide mixed with the oxides of other rare earth metals such as europium, samarium and cerium. It is also possible that it consists of scandium tungstates such as Sc 6 WO 12 or Sc 2 W 3 O 12 .
  • the cover layer can also be built up in multiple layers, in particular as a double layer, from the above-mentioned layer compositions, the best results being achieved if a layer containing scandium is the outer layer.
  • barium-containing compounds can be mixed with calcium or strontium oxide.
  • This cover layer is preferably 100 to 500 nm thick.
  • the tungsten portion of the Top layer consists of ultrafine particles with a diameter of 1 to 50 nm deposited in a nanostructured layer. The others both components are also deposited as ultra-fine particles and partly between, partly on the tungsten particles. From the three components is formed upon activation of the emitting surface complex, which as Surface layer lies on the top layer.
  • the low-temperature cathodes according to the invention are in a two-stage Process manufactured.
  • cathodes such as L-cathodes, I-cathodes, B-cathodes or M-cathodes
  • gas or silicon disks which are coated with an underlayer made of conductive material according to the invention.
  • These documents are brought into the deposition chamber of a laser ablation deposition system. It is favorable to use an excimer laser as the laser, which, in contrast to CO 2 lasers, can also ablate tungsten without any problems.
  • the tungsten-containing component is deposited first, the scandium-containing component second, and the barium-containing component third.
  • the emission properties of the finished low-temperature cathode are influenced favorably if the gas atmosphere in the ablation deposition process consists of high-purity argon or argon / hydrogen. Furthermore, it is advantageous if the underlays for the cover layer are heated in the process.
  • the emitter complex is in the surface layer educated.
  • This activation step can be a thermal, voltage based Activation, a simple sintering or a superficial sintering in one Be a laser beam.
  • the thermal, voltage-based activation should take place under vacuum.
  • the simple option is to place the low-temperature cathode in the finished discharge tube to activate.
  • the cathode is heated to approx. 800 ° C and voltage created.
  • the associated current-voltage diagram also sets one Quality control.
  • the activation can also be carried out in a simple sintering at 800 ° C consist. In the case of cover layers with larger particles, the activation step in pulsed laser treatment at 1000 ° C to 1100 ° C.
  • the low-temperature cathodes according to the invention are distinguished by excellent Emission at low temperatures because it has a very low work function to have.
  • the total emission consists of glow emission and field emission.
  • the contribution of the glow emission according to the Richardson equation i 0 A R T 2 exp (- ⁇ / kT) falls below 1nA at 200 ° C.
  • field emission starts at a threshold of 1.2 kV, which very quickly delivers emission currents> 3 ⁇ A when the field is increased further.
  • diode spacing d 160 ⁇ m, as can be determined from the Child-Langmuir equation, there follows a field emission threshold field strength of 7.5 V / ⁇ m, which represents a very good value for cold emission and is only reached as a peak value by a few other cathodes ,

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  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)

Claims (17)

  1. Cathode à basse température qui comprend un support, éventuellement avec un chauffage ou un refroidissement, une sous-couche conductrice appliquée sur le support, éventuellement un substrat avec un matériau de dispersion et une couche de couverture avec une nanostructure en particules ultrafines, la couche de couverture comprenant une couche de surface composée d'un complexe émetteur formé à partir d'un matériau d'émission avec plusieurs composants.
  2. Tube à décharge électrique ou lampe à décharge électrique avec une ou plusieurs cathodes à basse température conformément à la revendication 1.
  3. Tube à décharge électrique ou lampe à décharge électrique selon la revendication 2, caractérisé en ce qu'il comprend une électrode de commande à grille.
  4. Ecran plat avec une ou plusieurs cathodes à basse température conformément à la revendication 1.
  5. Cathode à basse température selon la revendication 1, caractérisée en ce qu'elle est prévue pour une température de fonctionnement entre 20°C et 500°C.
  6. Cathode à basse température selon l'une des revendications 1 et 5, caractérisée en ce que le matériau d'émission est un premier composant qui contient des métaux, en particulier des métaux réfractaires et leurs alliages, un deuxième composant qui contient du scandium, de l'yttrium, du lanthane, des lanthanides ou actinides et/ou leurs composés, en particulier leurs oxydes et/ou un troisième composant qui contient des alcalino-terreux et/ou leurs composés.
  7. Cathode à basse température selon l'une des revendications 1, 5 et 6, caractérisée en ce que le matériau d'émission contient comme premier composant du tungstène, comme deuxième composant des oxydes de scandium et comme troisième composant des oxydes de baryum.
  8. Cathode à basse température selon l'une des revendications 1 et 5 à 7, caractérisée en ce que les composants du matériau d'émission sont contenus seuls ou ensemble dans la sous-couche et/ou le substrat et/ou la couche de couverture.
  9. Cathode à basse température selon l'une des revendications 1 et 5 à 8,
    caractérisée en ce que le complexe émetteur façonné a un travail de sortie < 2,8 eV.
  10. Cathode à basse température selon l'une des revendications 1 et 5 à 9, caractérisée en ce que les particules ultrafines ont un diamètre de 1 à 100 nm.
  11. Cathode à basse température selon l'une des revendications 1 et 5 à 10, caractérisée en ce que la nanostructure de la couche de couverture est nanocristalline ou nanoamorphe et, éventuellement, nanoporeuse et que le diamètre structurel s'élève à 1 à 1000 nm.
  12. Procédé de fabrication d'une cathode à basse température selon la revendication 1, dans lequel un corps préliminaire avec un support, avec une sous-couche conductrice appliquée sur le support, avec éventuellement un substrat avec matériau de dispersion avec une couche de couverture avec une nanostructure en particules ultrafines et qui contient les composants du matériau d'émission individuellement ou ensemble dans la sous-couche et/ou le substrat et/ou la couche de couverture est fabriqué dans une première étape et le complexe émetteur est formé comme couche de surface sur la couche de couverture dans une deuxième étape.
  13. Procédé selon la revendication 12, caractérisé en ce que le façonnage est effectué à une température = 800°C dans un ultravide ou un vide très poussé avec une pression de gaz résiduel et sous application d'un champ électrique.
  14. Procédé selon la revendication 13, caractérisé en ce que la pression de gaz résiduel est = 10-4 mbar et que le gaz résiduel contient des gaz nobles, de l'azote, de l'hydrogène et/ou de l'oxygène avec une pression partielle respective de = 10-5 mbar.
  15. Procédé selon l'une des revendications 12 à 14, caractérisé en ce que le façonnage est assuré par un traitement de frittage à une température > 500°C et sous vide ou sous atmosphère gazeuse qui contient des gaz nobles ,de l'azote, de l'hydrogène et/ou de l'oxygène.
  16. Procédé selon l'une des revendications 12 à 15, caractérisé en ce que la couche de couverture est fabriquée avec une nanostructure en particules ultrafines par dépôt-ablation laser.
  17. Procédé selon la revendication 16, caractérisé en ce que le dépôt par ablation laser intervient en sous-pression.
EP96201180A 1995-05-02 1996-04-29 Tubes à décharge électrique ou lampes à décharge électrique, écran plat d'affichage, cathode à basse température et leur procédé de fabrication Expired - Lifetime EP0741402B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19515596A DE19515596A1 (de) 1995-05-02 1995-05-02 Elektrische Entladungsröhre oder Entladungslampe, Flachbildschirm, Niedertemperaturkathode und Verfahren zu deren Herstellung
DE19515596 1995-05-02

Publications (3)

Publication Number Publication Date
EP0741402A2 EP0741402A2 (fr) 1996-11-06
EP0741402A3 EP0741402A3 (fr) 1997-11-26
EP0741402B1 true EP0741402B1 (fr) 2003-08-27

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EP96201180A Expired - Lifetime EP0741402B1 (fr) 1995-05-02 1996-04-29 Tubes à décharge électrique ou lampes à décharge électrique, écran plat d'affichage, cathode à basse température et leur procédé de fabrication

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Country Link
US (1) US5866975A (fr)
EP (1) EP0741402B1 (fr)
JP (1) JPH08306301A (fr)
DE (2) DE19515596A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995034222A1 (fr) * 1994-06-16 1995-12-21 Firmenich S.A. Procede d'aromatisation et composition aromatisante
US6344271B1 (en) * 1998-11-06 2002-02-05 Nanoenergy Corporation Materials and products using nanostructured non-stoichiometric substances
CA2229290A1 (fr) * 1997-05-16 1998-11-16 John T. Jankowski Electrode de lampe a decharge
JP3902883B2 (ja) 1998-03-27 2007-04-11 キヤノン株式会社 ナノ構造体及びその製造方法
US6120857A (en) * 1998-05-18 2000-09-19 The Regents Of The University Of California Low work function surface layers produced by laser ablation using short-wavelength photons
US6965199B2 (en) * 2001-03-27 2005-11-15 The University Of North Carolina At Chapel Hill Coated electrode with enhanced electron emission and ignition characteristics
EA003573B1 (ru) * 2001-06-29 2003-06-26 Александр Михайлович Ильянок Плоский дисплей с самосканирующей разверткой
KR100530765B1 (ko) * 2002-10-04 2005-11-23 이규왕 나노 다공성 유전체를 이용한 플라즈마 발생장치
WO2005106913A1 (fr) * 2004-04-28 2005-11-10 Kye-Seung Lee Lampe fluorescente du type plat
DE102004043247B4 (de) * 2004-09-07 2010-04-15 Osram Gesellschaft mit beschränkter Haftung Elektrode für Hochdruckentladungslampen sowie Hochdruckentladungslampe mit derartigen Elektroden
CN103713420A (zh) * 2013-12-30 2014-04-09 京东方科技集团股份有限公司 一种阵列基板及显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1410641A (fr) * 1963-10-04 1965-09-10 Philips Nv Corps métallique poreux et son procédé de fabrication
US4160191A (en) * 1977-12-27 1979-07-03 Hausfeld David A Self-sustaining plasma discharge display device
US4810926A (en) * 1987-07-13 1989-03-07 Syracuse University Impregnated thermionic cathode
JPH01225040A (ja) * 1988-03-02 1989-09-07 Hitachi Ltd 電子放出用電極及び表示装置
JPH06203742A (ja) * 1992-12-29 1994-07-22 Canon Inc 電子放出素子、電子線発生装置及び画像形成装置
EP0730780A1 (fr) * 1993-06-02 1996-09-11 Microelectronics and Computer Technology Corporation Cathode plate a emission de champ pourvue d'une pellicule de diamant amorphe
EP0651419B1 (fr) * 1993-10-28 1998-06-24 Koninklijke Philips Electronics N.V. Cathode à réserve et méthode de fabrication
US5623180A (en) * 1994-10-31 1997-04-22 Lucent Technologies Inc. Electron field emitters comprising particles cooled with low voltage emitting material

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Publication number Publication date
JPH08306301A (ja) 1996-11-22
DE19515596A1 (de) 1996-11-07
US5866975A (en) 1999-02-02
DE59610682D1 (de) 2003-10-02
EP0741402A2 (fr) 1996-11-06
EP0741402A3 (fr) 1997-11-26

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