EP0732705A1 - Teilchen-Mikrokollimationsvorrichtung, Teilchendetektor und Detektionsverfahren, Herstellungsverfahren und Verwendung der Mikrokollimationsvorrichtung - Google Patents

Teilchen-Mikrokollimationsvorrichtung, Teilchendetektor und Detektionsverfahren, Herstellungsverfahren und Verwendung der Mikrokollimationsvorrichtung Download PDF

Info

Publication number
EP0732705A1
EP0732705A1 EP96400506A EP96400506A EP0732705A1 EP 0732705 A1 EP0732705 A1 EP 0732705A1 EP 96400506 A EP96400506 A EP 96400506A EP 96400506 A EP96400506 A EP 96400506A EP 0732705 A1 EP0732705 A1 EP 0732705A1
Authority
EP
European Patent Office
Prior art keywords
detector
particles
particle
microcollimation
charged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96400506A
Other languages
English (en)
French (fr)
Inventor
Christian Ngo
Thierry Pochet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP0732705A1 publication Critical patent/EP0732705A1/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation

Definitions

  • the present invention relates to a particle microcollimation device, a detector and a method for detecting particles, a method of manufacturing and using said collimation device.
  • Neutrons are neutral particles. They cannot be detected directly with conventional detectors because they operate by collection of charges created during the passage of the particle to be detected. The detection of neutrons requires a converter which will sign the presence of a neutron by the formation of one or more charged particles. In detectors operating on the principle of a charge collection, it is these charged particles which will make it possible to detect the presence of a neutron.
  • the present invention relates to pulse-by-pulse detection of thermal neutrons using semiconductor or gas detectors.
  • the detection of thermal neutrons is an important problem, particularly for monitoring the operation of nuclear reactors.
  • This pulse-by-pulse detection results in difficulties related to energy losses in the converter and the angle of arrival of charged particles in the detector.
  • thermal neutron The conversion of a thermal neutron into charged particles can be done by several nuclear reactions having a large cross section. In the following description, the most used reactions will be cited, but the invention relates to any nuclear reaction creating charged particles from, for example, a thermal neutron or the like: 10 B + not ⁇ 4 Hey + 7 Li + 2310 keV
  • the device shown diagrammatically in FIG. 1, is a semiconductor detector 10, in crystalline silicon or in amorphous silicon for example, on which a thin layer of boron 10 B has been deposited (converter 11).
  • the large cross section of thermal neutron capture by boron 10 B makes it possible to convert a neutron flux into two charged fragments: a 4 He of 1.47 MeV and a 7 Li of 0.84 MeV emitted at 180 ° on the other (fragment F1 and fragment F2 in the figure).
  • the path of 4 He (helium) and 7 Li (lithium) in 10 B does not exceed 3.6 ⁇ m. Consequently, there is no point in increasing the thickness of the layer beyond 3.6 ⁇ m because the fragments can no longer arrive in the detector and remain in the boron deposit.
  • the capture of a thermal neutron is a random process governed by a large cross section.
  • the two fragments F1 and F2 are emitted at 180 ° from each other, which means that only one of them is emitted in the half-space containing the semiconductor detector. Therefore, at best, the detector can detect only one of the two fragments emitted.
  • the angular distribution of emission of the two fragments is isotropic in the reference frame of the center of mass of the system made up of 10 B and the neutron. Given the low kinetic energy of the thermal neutron (1/40 eV) this frame of reference coincides with that of the laboratory and this is the reason for which the two fragments are emitted 180 ° from each other.
  • the angle of emission of the fragment arriving in the detector can be arbitrary (from 0 to 180 °, where 90 ° corresponds to a normal incidence on the detector).
  • the position of the emission of the fragment in the converter can also be arbitrary. This is schematically shown in Figure 2.
  • a thermal neutron gives, in the semiconductor detector, a signal whose amplitude varies from a very small value (emission of the fragment close to 0 or 180 °) up to a maximum value corresponding to a 90 ° emission close to the input face of the detector.
  • This variation of the pulse height is continuous and it is difficult, for low values, to separate the signals due to the neutrons from those due to the background noise of the detector. This can also be important if this detector consists of a thin layer such as amorphous silicon, for example.
  • the object of the present invention is to overcome these various drawbacks.
  • the invention relates to a device for microcollimation of incident particles, consisting of a set of micro-holes, of size on the order of a micrometer, randomly drilled, but oriented in parallel, in an insulating sheet of thickness between a few micrometers and several millimeters.
  • the insulating sheet is made of plastic, for example polycarbonate, kapton, or polyimide. It can also be made of cleaved mica. More generally, it can be made of a material in which latent traces can be created by bombardment of heavy ions. The density of the holes is less than 10 8 / cm 2 .
  • the effective capture or conversion section in the converter is much greater than that of the sheet.
  • the converter comprises, in the illustrative example, a layer of boron.
  • the charged particle detector is a crystalline, polycrystalline or amorphous semiconductor, or a gas detector.
  • the particles can be thermal neutrons, neutrons or photons.
  • the invention also relates to a particle detection method which consists in placing the device in a particle detector, between a layer for converting the particle into electrically charged fragments and a charged particle detector.
  • the particles to be detected can be thermal neutrons, neutrons or photons.
  • the invention can also be used for other neutral particles, atoms or aggregates for example.
  • This method in a pulse-by-pulse counting mode, consists of the implementation of the aforementioned microcollimation device, without processing the signals collected in the charged particle detector.
  • the proposed invention can also be used to detect other particles if these are emitted in a large solid angle of space. For this, their kinetic energy must be such that they can be stopped by the microcollimation assembly if they do not pass through one of the holes.
  • the device of the invention acts as a directional filter: it lets through only the particles which arrive almost perpendicular to the surface of the device. This filtering is also accompanied by a significant reduction in the counting rate since only a small proportion of particles are "filtered". In this sense, this device can also serve as a counting rate attenuator.
  • the invention also relates to a method of manufacturing a microcollimation device which comprises a step of bombarding a plastic sheet with a beam of heavy ions.
  • the heavy ions are projectiles having at least the mass of krypton.
  • the particle flux is approximately 5 ⁇ 10 7 particles / cm 2 .
  • this manufacturing process comprises a manufacturing step by lithographic technique.
  • This collimation device therefore plays the role of a direction selector for the incident charged particles. As a result, the number of particles passing through the microholes is a small proportion of the incident particles. The device therefore also plays the role of counting rate attenuator.
  • a collimator or collimators to select the direction of an incident particle is of course not new.
  • a collimator is usually produced by drilling or machining. This process is perfect for making collimators with macroscopic dimensions. On the other hand, it cannot be extrapolated to dimensions on the order of a micron.
  • the invention proposes the production of these collimators by a process which is not usually not used in the detection field. It is a question of realizing them thanks to a beam of heavy ions of suitable kinetic energy. Each heavy ion plays the role of a drill and creates a defect in the material which can be transformed into a hole of micronic dimensions by chemical development.
  • the simplest method is to irradiate it with a beam of heavy ions coming from an accelerator or from a source of fission fragments such as 252 Cf.
  • the slowdown of a heavy ion in matter begins with an electronic slowdown which generates charges, followed by a nuclear slowdown when the kinetic energy of the ion incident is less than about 0.1 MeV per nucleon.
  • the ion creates a latent trace whose diameter is of the order of 10 nanometers.
  • This latent trace is surrounded by a halo coming from the ejection of electrons torn off during the deceleration of the heavy ion (so-called delta electrons).
  • the diameter of the halo is of the order of a micrometer.
  • the advantage of heavy ions is that each of them creates a latent trace. This is well defined geometrically and allows, after revelation, to obtain holes of the order of a micrometer. The heavier the ion, the more the trajectory of the ion in the matter is straight and well defined. In practice, it is necessary to create holes with projectiles having at least the mass of krypton.
  • the use of heavy ions in etching is very different from that of photons or electrons. Indeed, for the latter, the formation of a latent trace requires the participation of several electrons or particles. A mask is therefore necessary in the case of photons (visible, ultraviolet, X or ⁇ rays). For electrons, we can consider controlling them because they are charged. For small thicknesses, conventional lithography makes it possible to make ordered holes. However, as soon as large thicknesses are desired and the distribution of the holes can be random, heavy ions are best suited.
  • the number of holes that can be created in the sheet depends on the incident flow. Typically, a density of 10 8 holes / cm 2 represents a maximum not to be exceeded. This is well below the capabilities of a particle accelerator. With such a density of holes, the porosity, defined as the number of holes multiplied by the surface of one of them, is 0.785. This large value implies that the probability of having overlapping holes is not zero. This is however only a minor drawback since even if several holes overlap, they still define an angle for the fragments which is close to the vertical. A lower flux, such as 5 x 10 7 particles / cm 2 , greatly reduces this probability of overlapping while keeping a porosity of 0.4.
  • the depth of the hole depends on the energy and the size of the incident ion. For kinetic energies of the order of 1 MeV per nucleon, the depth is of the order of 10 micrometers.
  • the advantage of using heavy ions is the possibility of having a large energy dynamic allowing thus to control the depth of the hole while remaining within reasonable costs.

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Measurement Of Radiation (AREA)
EP96400506A 1995-03-14 1996-03-12 Teilchen-Mikrokollimationsvorrichtung, Teilchendetektor und Detektionsverfahren, Herstellungsverfahren und Verwendung der Mikrokollimationsvorrichtung Withdrawn EP0732705A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9502911 1995-03-14
FR9502911A FR2731832B1 (fr) 1995-03-14 1995-03-14 Dispositif de microcollimation de particules, detecteur et procede de detection de particules, procede de fabrication et utilisation dudit dispositif de microcollimation

Publications (1)

Publication Number Publication Date
EP0732705A1 true EP0732705A1 (de) 1996-09-18

Family

ID=9476990

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96400506A Withdrawn EP0732705A1 (de) 1995-03-14 1996-03-12 Teilchen-Mikrokollimationsvorrichtung, Teilchendetektor und Detektionsverfahren, Herstellungsverfahren und Verwendung der Mikrokollimationsvorrichtung

Country Status (4)

Country Link
US (1) US5629523A (de)
EP (1) EP0732705A1 (de)
JP (1) JPH08271639A (de)
FR (1) FR2731832B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19839619A1 (de) * 1998-08-31 1999-12-09 Siemens Ag Verfahren zum Herstellen eines Streustrahlenrasters und ein somit hergestelltes Streustrahlenraster eines Strahlendiagnosegerätes

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545281B1 (en) * 2001-07-06 2003-04-08 The United States Of America As Represented By The United States Department Of Energy Pocked surface neutron detector
US9958569B2 (en) 2002-07-23 2018-05-01 Rapiscan Systems, Inc. Mobile imaging system and method for detection of contraband
AU2003296919A1 (en) * 2002-10-29 2004-05-25 The Regents Of The University Of Michigan High-efficiency neutron detectors and methods of making same
KR101186764B1 (ko) * 2003-05-09 2012-09-28 더 리젠츠 오브 더 유니버시티 오브 미시간 결정들에서 우수한 수준의 표면적과 다공성의 성취를 위한 방법의 이행
CN1914219A (zh) * 2003-12-05 2007-02-14 密歇根大学董事会 金属有机多面体
DE102004040239B3 (de) * 2004-08-13 2006-02-23 Hahn-Meitner-Institut Berlin Gmbh Sensor mit einem Feld aus Nanoporen und Verfahren zur Herstellung
CN101189244A (zh) 2004-10-22 2008-05-28 密歇根大学董事会 共价连接的有机骨架和多面体
JP4599504B2 (ja) * 2005-02-24 2010-12-15 国立大学法人横浜国立大学 Ｘ線用コリメータ、その製法、ｘ線検出装置及びｘ線入射場所の決定方法
ES2558536T3 (es) * 2005-04-07 2016-02-05 The Regents Of The University Of Michigan Technology Management Wolverine Tower Office Adsorción elevada de gas en un marco metal-orgánico con sitios metálicos abiertos
WO2007038508A2 (en) * 2005-09-26 2007-04-05 The Regents Of The University Of Michigan Metal-organic frameworks with exceptionally high capacity for storage of carbon dioxide at room-temperature
LT1988996T (lt) 2006-02-28 2017-10-25 The Regents Of The University Of Michigan Funkcionalizuotų ceolito struktūrų gavimas
US7855372B2 (en) * 2006-03-16 2010-12-21 Kansas State University Research Foundation Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same
WO2011163108A2 (en) * 2010-06-21 2011-12-29 American Science And Engineering, Inc. Detector with active collimators
US10670740B2 (en) 2012-02-14 2020-06-02 American Science And Engineering, Inc. Spectral discrimination using wavelength-shifting fiber-coupled scintillation detectors
US8648315B1 (en) * 2012-08-14 2014-02-11 Transmute, Inc. Accelerator having a multi-channel micro-collimator
PL3271709T3 (pl) 2015-03-20 2023-02-20 Rapiscan Systems, Inc. Ręczny przenośny system kontroli rozpraszania wstecznego
JP6627273B2 (ja) * 2015-06-22 2020-01-08 富士電機株式会社 放射線検出装置
CN105445779B (zh) * 2015-12-29 2019-01-25 清华大学 慢中子转换体及慢中子探测器
WO2019245636A1 (en) 2018-06-20 2019-12-26 American Science And Engineering, Inc. Wavelength-shifting sheet-coupled scintillation detectors
US11175245B1 (en) 2020-06-15 2021-11-16 American Science And Engineering, Inc. Scatter X-ray imaging with adaptive scanning beam intensity
US11340361B1 (en) 2020-11-23 2022-05-24 American Science And Engineering, Inc. Wireless transmission detector panel for an X-ray scanner

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3530315A1 (de) * 1985-08-24 1987-02-26 Duschner Heinz Kernspurfilter als gaseinlasssysteme fuer vakuumapparaturen
JPS62174679A (ja) * 1986-01-28 1987-07-31 Hamamatsu Photonics Kk 中性子検出器
DE3816078A1 (de) * 1988-05-11 1989-11-23 Brandt Reinhard Verfahren zur herstellung hitzebestaendiger und chemikalienresistenter feinstporiger mikrosiebe (lichgroessen d > 10 nano-m) aus der polyimid-folie "kapton" (handelsname von du pont)
JPH0247141A (ja) * 1988-08-09 1990-02-16 Japan Atom Energy Res Inst 多孔性ポリイミド膜の製造方法
SU574044A1 (ru) * 1974-08-15 1991-02-15 Объединенный Институт Ядерных Исследований Способ изготовлени микрофильтров

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU574044A1 (ru) * 1974-08-15 1991-02-15 Объединенный Институт Ядерных Исследований Способ изготовлени микрофильтров
DE3530315A1 (de) * 1985-08-24 1987-02-26 Duschner Heinz Kernspurfilter als gaseinlasssysteme fuer vakuumapparaturen
JPS62174679A (ja) * 1986-01-28 1987-07-31 Hamamatsu Photonics Kk 中性子検出器
DE3816078A1 (de) * 1988-05-11 1989-11-23 Brandt Reinhard Verfahren zur herstellung hitzebestaendiger und chemikalienresistenter feinstporiger mikrosiebe (lichgroessen d > 10 nano-m) aus der polyimid-folie "kapton" (handelsname von du pont)
JPH0247141A (ja) * 1988-08-09 1990-02-16 Japan Atom Energy Res Inst 多孔性ポリイミド膜の製造方法

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; FRASER G W ET AL: "Thermal neutron imaging using microchannel plates", XP002006069 *
DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; GREBENSHCHIKOV V V ET AL: "Experimental studies of the properties of microchannel plates as fast-proton collimators", XP002006068 *
DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; VATER P ET AL: "Nuclear track microfilters made of mica", XP002006067 *
DATABASE WPI Section Ch Week 9129, Derwent World Patents Index; Class A31, AN 91-213481, XP002006070 *
NEUTRONS, X-RAYS AND GAMMA RAYS: IMAGING DETECTORS, MATERIAL CHARACTERIZATION TECHNIQUES AND APPLICATIONS, SAN DIEGO, CA, USA, 21-22 JULY 1992, vol. 1737, ISSN 0277-786X, PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 1993, USA, pages 298 - 307 *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 019 (P - 657) 21 January 1988 (1988-01-21) *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 211 (C - 0715) 2 May 1990 (1990-05-02) *
PIS'MA V ZHURNAL TEKHNICHESKOI FIZIKA, FEB. 1990, USSR, vol. 16, no. 3-4, ISSN 0320-0108, pages 24 - 27 *
SOLID STATE NUCLEAR TRACK DETECTORS. PROCEEDINGS OF THE INTERNATIONAL SPRING SCHOOL ON THE DEVELOPMENT AND APPLICATIONS OF SOLID STATE NUCLEAR TRACK DETECTORS, NILORE, RAWALPINDI, PAKISTAN, 5-14 MARCH 1979, vol. 173, no. 1, ISSN 0029-554X, NUCLEAR INSTRUMENTS AND METHODS, 15 JUNE 1980, NETHERLANDS, pages 205 - 210 *
WILKINS ET AL.: "On the concentration, focusing, and collimation of X-rays and neutrons using microchannel plates and configurations of holes", REVIEW OF SCIENTIFIC INSTRUMENTS, vol. 60, no. 6, June 1989 (1989-06-01), NEW YORK US, pages 1026 - 1036, XP000035867 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19839619A1 (de) * 1998-08-31 1999-12-09 Siemens Ag Verfahren zum Herstellen eines Streustrahlenrasters und ein somit hergestelltes Streustrahlenraster eines Strahlendiagnosegerätes

Also Published As

Publication number Publication date
US5629523A (en) 1997-05-13
FR2731832B1 (fr) 1997-04-18
FR2731832A1 (fr) 1996-09-20
JPH08271639A (ja) 1996-10-18

Similar Documents

Publication Publication Date Title
EP0732705A1 (de) Teilchen-Mikrokollimationsvorrichtung, Teilchendetektor und Detektionsverfahren, Herstellungsverfahren und Verwendung der Mikrokollimationsvorrichtung
EP2510338B1 (de) Verfahren und vorrichtung zur erkennung eines materials mittels der übertragungsfunktion
Uno et al. Development of a two-dimensional gaseous detector for energy-selective neutron radiography
FR2953298A1 (fr) Procede de correction du phenomene d'empilement applique a des spectres de rayonnement x acquis a l'aide d'un capteur spectrometrique
EP1553401A1 (de) Verfahren und Vorrichtung zur Raman-Spektroskopie
EP1155341A1 (de) Zwei dimensionaler detektor für ionisierende strahlung and verfahren zur herstellung
EP2446304B1 (de) Verfahren zur unterscheidung einer gamma-komponente und einer neutronenkomponente bei einem elektronischen signal
Yamazaki et al. A new generation of track etched membranes for microfiltration and ultrafiltration. Part I. Preparation and characterisation
WO1992001925A1 (fr) Appareil de mesure par irradiation neutronique pulsee de la teneur en ses divers constituants d'un materiau en vrac et procede de determination de cette teneur mettant en ×uvre cet appareil de mesure
US11262320B2 (en) Monitor for measuring mercury emissions
WO2000043760A2 (fr) Systeme de discrimination de matieres organiques et inorganiques
Li et al. The precursor Of Cold Fusion phenomenon in deuterium/solid systems
US7034307B2 (en) Neutron detector employing doped pyrolytic boron nitride and method of making thereof
Shemukhin et al. Medium energy ion scattering spectroscopy: Study of germanium amorphization under ion irradiation
CA3061418A1 (fr) Detecteur pour radiographie a haute energie et ensemble d'imagerie associe
FR3046254B1 (fr) Dispositif de detection de particules d'un environnement radiatif
Torrisi et al. Advantages to use graphene oxide thin targets in forward ion acceleration using fs lasers
Lapinskas et al. Tension Metastable Fluid Nuclear Particle Detector: Qualification and Comparisons
EP2877273B1 (de) Verfahren und vorrichtung zur herstellung einer nanoporösen membran
EP1602111B1 (de) Positronquelle
Kosinov et al. Simulation of thin-film detectors of ionizing radiation and thermal neutrons based on CdTe
Ferrari LHCb upgrades
Kumar et al. Study of track registration response of makrofol-KL to 40Ar and 136Xe ions
CHAMBERS et al. CERN/ECTA/66/WG 2/US SG 3/PM
Naramoto et al. 4.5 Reflection ERDA of hydrogen isotopes in DLC/Si using 15 MeV 16O ions

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE GB IT

17P Request for examination filed

Effective date: 19970305

17Q First examination report despatched

Effective date: 19980331

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19981013